KR20100012317A - Manufacturing method of the optical modulator - Google Patents

Manufacturing method of the optical modulator Download PDF

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Publication number
KR20100012317A
KR20100012317A KR1020080073639A KR20080073639A KR20100012317A KR 20100012317 A KR20100012317 A KR 20100012317A KR 1020080073639 A KR1020080073639 A KR 1020080073639A KR 20080073639 A KR20080073639 A KR 20080073639A KR 20100012317 A KR20100012317 A KR 20100012317A
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South Korea
Prior art keywords
layer
forming
film
type photosensitive
structure layer
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KR1020080073639A
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Korean (ko)
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장제욱
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삼성전기주식회사
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Priority to KR1020080073639A priority Critical patent/KR20100012317A/en
Publication of KR20100012317A publication Critical patent/KR20100012317A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Micromachines (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an optical modulator device, and more particularly, to a method of manufacturing an optical modulator device having improved light reflection characteristics of a light reflection layer by preventing foreign matters from being formed under a ribbon using a film type photosensitive material. .

In addition, the present invention, (a) forming an insulating layer on the substrate; (b) forming a sacrificial layer on the insulating layer; (c) forming a structure layer on the sacrificial layer; (d) forming piezoelectric drives for moving the central portion of the structure layer up and down on both side ends of the structure layer; (e) forming a hole by etching a portion of the center portion of the structure layer except for a region in which an upper reflective layer is to be formed and the sacrificial layer disposed on a lower surface of the structure layer; (f) forming the upper light reflecting layer for reflecting or diffracting incident light on a central portion of the structure layer by forming a pattern in which an area for forming the upper reflecting layer and an hole is opened after applying the film-type photosensitive material on the structure layer; And forming a lower light reflection layer reflecting or diffracting incident light on the insulating layer through the hole; And (g) etching the sacrificial layer located on the bottom surface of the region where the upper reflective layer is to be formed.

Description

Manufacturing method of the optical modulator device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an optical modulator device, and more particularly, to a method of manufacturing an optical modulator device having improved light reflection characteristics of a light reflection layer by preventing foreign matters from being formed under a ribbon using a film type photosensitive material. .

MEMS (Micro Electro Mechanical System) refers to a micro electromechanical system or device, and MEMS technology is a technology for forming a three-dimensional structure on a silicon substrate using semiconductor manufacturing technology.

MEMS is applied to the optical field as one of various application fields. MEMS technology enables the fabrication of optical components smaller than 1mm, enabling ultra-compact optical systems.

Micro, such as optical modulator elements and micro lenses, which correspond to micro optical systems

Optical components have been applied to communication devices, displays, and recording devices because of their fast response speed, small loss, and ease of integration and digitization.

The optical modulator device is divided into a direct method of directly controlling the on / off of light and an indirect method using reflection and diffraction of light, and the indirect method is divided into an electrostatic method and a piezoelectric method according to the method of being driven again.

The optical modulator device requires a light reflection layer for reflecting and diffracting light regardless of its driving method, and the light reflection characteristics of the light reflection layer must be maximized to improve the light diffraction efficiency of the light modulator device.

In addition, in order to maximize the light reflection characteristics of the light reflection layer, accurate implementation of the ribbon in which the light reflection layer is laminated is essential.

1A to 1F are cross-sectional views illustrating an etching process for forming holes in a ribbon in an optical modulator device according to the related art.

Referring to FIG. 1A, the insulating layer 20 is stacked on the substrate 10, the sacrificial layer 30 on the insulating layer 20, the structure layer 40 on the sacrificial layer 30, and the structure layer ( Piezoelectric drive bodies 50 are located on both sides of 40. Then, a predetermined portion of the piezoelectric drive body 50 and the structure layer 40 that can move up and down by the driving force generated by the piezoelectric drive body 50 in the ribbon 40r (here, the structure layer 40). Photoresist (PR) 41 for serving as an etch stop layer is positioned on a portion of the portion forming the ribbon.

Referring to FIG. 1B, after the photoresist 41 is positioned, an etching process for forming a hole is followed. That is, the sacrificial layer 30 disposed on the lower portion of the ribbon 40r and the lower surface of the photoresist 41 is etched using an etching gas or the like. Through this etching process, holes are formed in portions of the ribbon 40r where the photoresist 41 is not located.

Referring to FIG. 1C, after the hole is formed, the photoresist 41 stacked on the piezoelectric drive body 50 and the ribbon 40r is removed to form subsequent light reflection layers 70a and 70b. The liquid photoresist 60 is applied onto the piezoelectric drive body 50 and the ribbon 40r.

Subsequently, referring to FIG. 1D, a portion of the photoresist 60 applied on the piezoelectric driver 50 and the ribbon 40r to which the light reflection layers 70a and 70b should be formed is removed to form a pattern. (A light reflection layer must be formed on all upper portions of the ribbon 40r shown in FIG. 1D, so that all the photoresist 60 formed on the ribbon 40r is removed, and the photoresist 60 only on the piezoelectric driver 50. Will remain).

Referring to FIG. 1E, a light reflection material is stacked on the ribbon 40r from which the photoresist 60 is removed and the insulating layer 20 to form the light reflection layers 70a and 70b.

Referring to FIG. 1F, after forming the light reflection layers 70a and 70b, the sacrificial layer 30 is etched. Through the etching of the sacrificial layer 30, the ribbon 40r on which the upper light reflection layer 70a is formed may be spaced apart from the insulating layer 20 on which the lower light reflection layer 70b is formed by a predetermined interval.

However, in the manufacturing method of the optical modulator element according to the prior art as shown in Figs. 1A to 1F, the ribbon 40r is formed to form the light reflection layers 70a and 70b on the ribbon 40r and the insulating layer 20. When the photoresist 60 is applied to the photoresist 60, a portion of the photoresist 60 remains under the ribbon 40r as shown in FIG. 1D.

Then, the remaining photoresist 60a, 60a 'still remains after the sacrificial layer 30 is etched to affect the operating characteristics of the ribbon 40r.

That is, the remaining photoresist 60a at the bottom of the ribbon 40r causes the ribbon 40r to be connected to the insulating layer 20 so that the ribbon 40r cannot be driven. Photoresist changes the weight of the ribbon 40r so that desired operating characteristics cannot be obtained.

Accordingly, an object of the present invention is to provide a method of manufacturing an optical modulator device so that foreign matters and the like are not formed in the lower portion of the ribbon by using a film-type photosensitive material in order to solve the above problems.

The present invention for the above purpose, (a) forming an insulating layer on a substrate; (b) forming a sacrificial layer on the insulating layer; (c) forming a structure layer on the sacrificial layer; (d) forming piezoelectric drives for moving the central portion of the structure layer up and down on both side ends of the structure layer; (e) forming a hole by etching a portion of the center portion of the structure layer except for a region in which an upper reflective layer is to be formed and the sacrificial layer disposed on a lower surface of the structure layer; (f) forming the upper light reflecting layer for reflecting or diffracting incident light on a central portion of the structure layer by forming a pattern in which an area for forming the upper reflecting layer and an hole is opened after applying the film-type photosensitive material on the structure layer; And forming a lower light reflection layer reflecting or diffracting incident light on the insulating layer through the hole; And (g) etching the sacrificial layer located on the bottom surface of the region where the upper reflective layer is to be formed.

In addition, the step (f) of the present invention, (f-1) applying the film-type photosensitive material on the open portion of the structure layer and the piezoelectric drive body; (f-2) forming a pattern in which a region of the center portion of the structure layer to form the upper reflective layer is opened in an upper portion and an open pattern portion of the film-type photosensitive material; (f-3) stacking a light reflecting material on the upper portion of the film-type photosensitive member and an open pattern portion, and forming the lower light reflecting layer reflecting or diffracting incident light on the insulating layer through the hole; And (f-4) removing the film type photosensitive member and the light reflecting material laminated on the film type photosensitive member to complete the upper light reflecting layer.

In addition, in the step (f-2) of the present invention, after the film-type photosensitive material is directed to the ground, a pattern in which a region of the center portion of the structure layer is formed on the film-type photosensitive material is opened. It is characterized by forming.

In addition, the step (f-4) of the present invention is characterized in that by removing the film-type photosensitive material by the method of lifting off the light reflecting material (lift-off).

In addition, the material constituting the film-sensitive photosensitive material of the present invention is characterized in that the dry film.

In addition, the hole in step (e) of the present invention is characterized in that it is formed through a dry etching method using a fluorine-based gas.

In addition, the fluorine-based gas of the present invention is characterized in that any one of CF 4 , NF 3 , C 2 F 6 , C 3 F 8 , CHF 3 and SF 6 .

According to the present invention as described above, it is possible to prevent the generation of foreign substances in the lower portion of the ribbon to improve the dynamic characteristics of the ribbon.

In addition, according to the present invention, it is possible to prevent the generation of foreign substances in the lower portion of the ribbon to produce a ribbon having the same weight, and to ensure a uniform control of the ribbon.

In addition, according to the present invention, by improving the light reflection characteristics of the light reflection layer, it is possible to maximize the light diffraction efficiency and reliability of the optical modulator device.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to which the present invention pertains without departing from the spirit and scope of the present invention as set forth in the claims below It will be appreciated that modifications and variations can be made.

Now, with reference to the drawings of FIG. 2, the manufacturing method of the optical modulator device according to the present invention will be described.

2 is a perspective view showing the structure of an optical modulator device to which the present invention is applied.

2, the optical modulator device to which the present invention is applied includes a substrate 110, an insulating layer 120, a lower light reflection layer 240b, a sacrificial layer 130, a structure layer 140, and an upper light reflection layer 240a. ), The protective layer 150, the bonding layer 160, the piezoelectric driver 250 and the upper insulating layer 200.

The substrate 110 is a commonly used semiconductor substrate, and the insulating layer 120 is positioned on the substrate 110.

A light reflection layer 240b may be disposed on the insulating layer 120 to reflect or diffract incident light (hereinafter, referred to as a lower light reflection layer). As the lower light reflecting layer 240b, various light reflecting materials (for example, metal materials (Al, Pt, Cr, Ag, etc.)) may be used.

The sacrificial layer 130 is positioned on the insulating layer 120. After the sacrificial layer 130 is stacked on the insulating layer 120, a portion of the sacrificial layer 130 is etched through a process to be described later to be positioned on both side ends of the insulating layer 120 to support the structure layer 140 to be described later. .

In addition, through such an etching process, a predetermined portion of the structure layer 140 may be spaced apart by a predetermined interval while securing a driving space capable of moving up and down between the insulating layer 120.

Here, in the optical modulator device illustrated in FIG. 2, only a part of the sacrificial layer 130 is etched so that the sacrificial layer 130 is positioned on both side ends of the insulating layer 120 to support the structure layer 140, but the sacrificial layer 130 is supported. All of the layers 130 may be etched through a process to be described later.

In this case, the sacrificial layer 130 does not support the structure layer 140, but may only serve to secure a driving space in which the structure layer 140 can move up and down. That is, the position of the driving space secured corresponding to the etching process of the sacrificial layer 130 may vary.

However, since the optical modulator element illustrated in FIG. 2 will be described below, a predetermined portion of the structure layer 140 that can move up and down through the secured driving space becomes a central portion of the structure layer 140. Hereinafter, the 'central portion of the structure layer 140' will be abbreviated as ribbon 140r. However, when the position of the driving space secured as described above is changed, the position of the ribbon of the structure layer 140 may also be changed accordingly.

The structure layer 140 is positioned on the sacrificial layer 130. At least one hole is formed in the center portion of the structure layer 140, that is, the ribbon. These holes may be formed through a process to be described later.

In this case, a light reflection layer (hereinafter, referred to as an “upper light reflection layer”) 240a capable of reflecting or diffracting incident light may be positioned on a portion of the ribbon except a portion where a hole is formed, that is, a reflection region. As the upper light reflecting layer 240a, various light reflecting materials (eg, metal materials (Al, Pt, Cr, Ag, etc.)) may be used.

The piezoelectric driver 250 is positioned on both side ends of the structure layer 140, and the protective layer 150 and the bonding layer 160 are positioned between the structure layer 140 and the piezoelectric driver 250.

Here, the piezoelectric drive member 250 generates a driving force to move the ribbon up and down in accordance with the piezoelectric method.

The piezoelectric driver 250 is formed on the lower electrode 170 and the lower electrode 170, and contracts and expands when a predetermined voltage is applied to generate the up and down driving force. The upper electrode 190 is formed at the upper electrode 190 and applies a predetermined voltage formed on the piezoelectric layer 180 between the lower electrodes 170.

Here, when a predetermined voltage is applied to the lower electrode 170 and the upper electrode 190, the piezoelectric layer 180 contracts and expands to generate vertical movement of the ribbon. At this time, the reflection from the upper light reflecting layer 240a and the lower light reflecting layer 240b according to the height of the gap between the upper light reflecting layer 240a formed on the ribbon and the lower light reflecting layer 240b formed on the insulating layer 120. The total path difference between the light beams can change.

For example, when the wavelength of the incident light is λ, the light modulator element is formed on the upper light reflection layer 240a and the insulating layer 120 which are formed on the ribbon in a state where the light modulator element is not deformed (no voltage is applied). It is assumed that the interval between the lower light reflection layers 240b is set equal to λ / 2. In this case, the total path difference between the light reflected from the upper light reflection layer 240a formed on the ribbon and the lower light reflection layer 240b formed on the insulating layer 120 is equal to λ. Therefore, in the case of zero-order diffracted light, constructive interference causes maximum intensity of the diffracted light, and in the case of + 1st or -first-order diffracted light, the interference of the diffracted light has a minimum value.

In addition, when a predetermined voltage is applied to the piezoelectric driver 250, the interval between the upper light reflection layer 240a formed on the ribbon and the lower light reflection layer 240b formed on the insulating layer 120 is λ / 4 or It becomes equal to 3λ / 4. In this case, the total path difference between the light reflected from the upper light reflection layer 240a formed on the ribbon and the lower light reflection layer 240b formed on the insulating layer 120 is equal to an odd multiple of λ / 2. Therefore, in the case of zero-order diffracted light, the interference of the diffracted light has a minimum value, while in the case of the + 1st or -first-order diffracted light, constructive interference causes the intensity of the diffracted light to have a maximum value. Through the above-described process, the optical modulator device performs light modulation by diffracting and interfering incident light to load a signal on light.

Here, although the piezoelectric driver 250 in the optical modulator element illustrated in FIG. 2 has a form in which the piezoelectric layer 180 is formed on the entire surface of the lower electrode 170, this is only an example and the present invention. Of course, this does not limit the scope of rights. That is, in addition to the shape of the piezoelectric driver 250 illustrated in FIG. 2, various shapes (for example, the piezoelectric layer 180 is not formed on the entire surface of the lower electrode 170, but only on some surfaces of the lower electrode 170. Etc.). In the following description, however, the optical modulator device illustrated in FIG. 2 will be described.

On the other hand, the upper insulating layer 200 is applied to the surface of the piezoelectric drive member 250 to provide electrical insulation with respect to the exposed portion of the piezoelectric drive member 250 from the external environment, the upper insulating layer 200 is applied ) Is provided with a contact hole H for electrically connecting the upper electrode 190 and the lower electrode 170 to the outside.

3A to 3M are process diagrams illustrating a method of manufacturing an optical modulator device according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, an insulating layer 120 is formed on the substrate 110. The material constituting the substrate 110 is a material such as silicon (Si), alumina (Al 2 O 3 ), zirconia (ZrO 2 ), quartz (Quartz), silica (SiO 2 ), and the bottom surface of the substrate. And the upper layer may be formed using different heterogeneous materials.

The insulating layer 120 serves as an etch stop layer and has a high selectivity with respect to an etchant for etching the material used as the sacrificial layer 130, where the etchant is an etching gas or an etching solution. It consists of. In this case, the material used as the insulating layer 120 may be silica (SiO 2 ).

Referring to FIG. 3B, the sacrificial layer 130 is formed on the insulating layer 120. In this case, the sacrificial layer 130 may be etched so that the ribbon may be spaced apart from the insulating layer 120 by a predetermined interval through a later process. In this case, the material used as the sacrificial layer 130 may be silicon (Si) or polysilicon (Poly-Si).

Referring to FIG. 3C, the structure layer 140 is formed on the sacrificial layer 130. The structure layer 140 may be formed in the ribbon through a later process. Here, the material used as the structure layer 140 may be a material of silicon nitride series (Si X N Y ) such as Si 3 N 4 .

Referring to FIG. 3D, the protective layer 150 is formed on the structure layer 140, and the bonding layer 160 is formed on the protective layer 150. The protective layer 150 serves to protect against the upper surface of the structure layer 140 located thereunder during the etching process of the lower electrode 170 and the bonding layer 160 which will be described later etching, LTO, such as SiO 2 ( Low Temperature Oxide) materials may be used. In addition, the bonding layer 160 positioned on the protective layer 150 serves to bond the upper surface of the protective layer 150 and the lower electrode 170, and has excellent adhesion to Al 2 O 3 , TiO 2 , and TiN. A material of any one of insulating materials, such as TiSiN, TaN, Ta 2 O 3 may be used.

Next, referring to FIG. 3E, the lower electrode 170, the piezoelectric layer 180, and the upper electrode 190 are sequentially stacked to form the piezoelectric driver 250 on both ends of the structure layer 140. do.

In this case, platinum (Pt), nickel (Ni), gold (Au), aluminum (Al), titanium (Ti), IrO 2 , RuO 2, etc. may be used as the electrode material of the lower or upper electrodes 170 and 190. Any one of the above-described combinations of electrode materials may be used. In addition, a piezoelectric material such as PZT, PNN-PT, PLZT, AlN, or ZnO may be used as the piezoelectric layer 180, and an element such as lead (Pb), zirconium (Zr), zinc (Zn), or titanium (Ti) may be used. It is also possible to use a piezoelectric electrolytic material comprising one or more.

Afterwards, as shown in FIG. 3F, the protective layer 150, the bonding layer 160, the lower electrode layer 170, the piezoelectric layer 180, the upper electrode layer 190, and the added upper insulating layer 200 are removed. It is removed through the etching process to complete the configuration in which the piezoelectric drive body is located on both sides of the ribbon. This process is illustrated in detail in FIGS. 4A-4D.

Next, referring to FIG. 3G, a photoresist 220 is formed to form holes on the upper insulating layer 200 and the ribbon 140r, and a pattern for forming the holes is formed.

Subsequently, referring to FIG. 3H, holes are formed according to a pattern formed in the photoresist 220, and the photoresist 220 is removed as shown in FIG. 3I. In this etching process, a fluorine-based gas is used. Dry etching may be used. Here, as the fluorine-based etching gas, any one of CF 4 , NF 3 , C 2 F 6 , C 3 F 8 , CHF 3, and SF 6 may be used.

Next, as shown in FIG. 3J, the film-type photosensitive member 230 is applied onto the ribbon. Here, the film type photosensitive member 230 may be a dry film.

The dry film consists of a photosensitive material in the form of a film, a myler film and a cover film for imparting elasticity. The cover film is peeled off when the dry film is applied onto the ribbon. The mylar film remains after the dry film is applied on the ribbon to protect the photosensitive film and peels off prior to the developing process. The photosensitive material film is composed of a polymer material including a photosensitive material, and is a material whose physical properties change due to a sensitive reaction when light is irradiated to change a polymer chain. Such photoresist films are mainly used in a process called photo lithography in which a specific pattern is generated by using light (for example, ultraviolet rays). Lithography refers to a process of removing portions other than certain portions corresponding to such patterns (also referred to as 'patterning') to produce a pattern of a desired shape. Therefore, in general, the photosensitive material film is positioned on the portion to be patterned corresponding to the pattern to be formed, and then plays a role of preventing the portion on which the photosensitive material film is formed is etched (removed) through a patterning process. do.

Subsequently, as shown in FIG. 3K, a pattern is formed by removing a portion of the film type photosensitive member 230 on which the upper reflective layer 240a and the lower reflective layer 240b are to be formed on the ribbon. At this time, in order to prevent some debris of the film-type photosensitive member 230 to be removed from the hole, the film-type photosensitive member 230 is turned upside down so that the film-type photosensitive member 230 faces the ground. To remove some debris of the film-type photosensitive member 230 to fall in the opposite direction of the hole. In this case, some debris of the film-type photosensitive material 230 to be removed does not fall into the hole and foreign matters do not occur.

Next, referring to FIG. 3L, a light reflecting material is stacked according to a pattern formed on the film type photosensitive member 230 to form an upper reflective layer and a lower reflective layer. Here, as the light reflection material, for example, various metal materials (Al, Pt, Cr, Ag, etc.) may be used.

Next, referring to FIG. 3M, the light reflecting material stacked on the film type photosensitive member 230 and the film type photosensitive member 230 is removed.

In this case, various methods may be used to remove the film-type photosensitive member 230. After removing the film-type photosensitive member 230, the light reflecting material stacked on the film-type photosensitive member 230 may be removed. The light reflecting material is lifted off so that it can be removed. The lift-off refers to a method in which the material on the upper portion of the film type photosensitive member 230 is also removed while the film type photosensitive member 230 is removed.

Through this process, the light reflecting material stacked on the film type photosensitive material 230 and the film type photosensitive material 230 may be removed.

As a result, the light reflecting material that is not removed through the above-described process, that is, the light reflecting material laminated on the reflective region of the ribbon 140r forms the upper light reflecting layer 240a and is stacked on the insulating layer 120. The light reflection material was formed to form the lower light reflection layer 240b.

4A to 4E are process diagrams for the process of forming the piezoelectric driving body of FIG. 3F of the present invention.

As shown in FIG. 4A, the upper electrode 190 and the piezoelectric layer stacked on portions except the upper electrode 190, the piezoelectric layer 180, and the lower electrode 170 stacked on both side ends of the structure layer 140. The piezoelectric driver 250 is formed by etching the 180 and the lower electrode 170. In this case, the bonding layer 160 between the lower electrode 170 and the protective layer 150 for protecting the structure layer 140 when the lower electrode 170 is etched is also simultaneously etched.

Next, as illustrated in FIG. 4B, an upper insulating layer 200 is applied to electrically shield and protect the upper electrode 190 and the lower electrode 170 from the external environment.

Subsequently, referring to FIG. 4C, the photoresist 210 is applied to remove the upper insulating layer 200 located on the ribbon, and the photoresist 210 applied on the ribbon is removed.

Next, referring to FIG. 4D, the upper insulating layer 200 and the protective layer 150 are etched and removed according to the pattern formed on the photoresist 210, and the upper insulating layer 200 is removed by dry etching. The protective layer 150 is removed by wet etching. The etching method is different because the materials formed by the upper insulating layer 200 and the protective layer 150 are different from each other.

Thereafter, as shown in FIG. 4E, after removing the photoresist 210 positioned on the upper insulating layer 200, an electrical connection between the upper electrode 190 and the lower electrode 170 is provided. A contact hole is formed to complete the configuration in which the piezoelectric drive bodies (indicated by the reference numeral 250 in FIG. 3M) are positioned on both sides of the ribbon as shown in FIG. 3F.

1A to 1F are cross-sectional views illustrating an etching process for forming holes in a ribbon in an optical modulator device according to the prior art.

Figure 2 is a perspective view showing the structure of an optical modulator device to which the present invention is applied.

3A to 3M are process drawings showing a method of manufacturing the optical modulator element shown in FIG.

Figures 4a to 4e is a process chart of the process of forming the piezoelectric drive body of Figure 3f of the present invention.

<Description of the symbols for the main parts of the drawings>

110: substrate 120: insulating layer

130: sacrificial layer 140: structure layer

140r: Ribbon 150: protective layer

160: bonding layer 170: lower electrode

180: piezoelectric layer 190: upper electrode

200: upper insulating layer 210, 220: photoresist

230: film-type photosensitive material 240a, 240b: light reflection layer

Claims (7)

(a) forming an insulating layer on the substrate; (b) forming a sacrificial layer on the insulating layer; (c) forming a structure layer on the sacrificial layer; (d) forming piezoelectric drives for moving the central portion of the structure layer up and down on both side ends of the structure layer; (e) forming a hole by etching a portion of the center portion of the structure layer except for a region in which an upper reflective layer is to be formed and the sacrificial layer disposed on a lower surface of the structure layer; (f) forming the upper light reflecting layer for reflecting or diffracting incident light on a central portion of the structure layer by forming a pattern in which an area for forming the upper reflecting layer and an hole is opened after applying the film-type photosensitive material on the structure layer; And forming a lower light reflection layer reflecting or diffracting incident light on the insulating layer through the hole; And (g) etching the sacrificial layer located on the bottom surface of the region where the upper reflective layer is to be formed. The method of claim 1, Step (f) is, (f-1) applying the film-type photosensitive material on the open portion of the structure layer and the piezoelectric drive body; (f-2) forming a pattern in which a region of the center portion of the structure layer to form the upper reflective layer is opened in an upper portion and an open pattern portion of the film-type photosensitive material; (f-3) stacking a light reflecting material on the upper portion of the film-type photosensitive member and an open pattern portion, and forming the lower light reflecting layer reflecting or diffracting incident light on the insulating layer through the hole; And (f-4) removing the light reflection material laminated on the film-type photosensitive material and the film-type photosensitive material to complete the upper light reflection layer. The method of claim 2, Step (f-2) is, And forming a pattern on the film-type photosensitive material after opening the film-type photosensitive material toward the ground to open an area of the center portion of the structure layer to form the upper reflective layer. The method of claim 2, Step (f-4) is, And removing the light reflection material by a method of lifting off the film-type photosensitive material. The method of claim 1, The material constituting the film-type photosensitive material is a manufacturing method of an optical modulator device, characterized in that the dry film. The method of claim 1, In step (e) The hole is a method of manufacturing an optical modulator device, characterized in that formed through a dry etching method using a fluorine-based gas. The method of claim 6, The fluorine-based gas is CF 4 , NF 3 , C 2 F 6 , C 3 F 8 , CHF 3 And SF 6 The method of manufacturing an optical modulator device, characterized in that any one.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180219448A1 (en) * 2015-07-03 2018-08-02 Robotis Co., Ltd. Device for attaching/detaching idler horn for actuator module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180219448A1 (en) * 2015-07-03 2018-08-02 Robotis Co., Ltd. Device for attaching/detaching idler horn for actuator module

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