KR20090132263A - Manufactory method of nano-master with nano-pattern of high column-row density - Google Patents

Abstract

PURPOSE: A method for manufacturing nano-master is provided to obtain the nano-master having a high aspect ratio and a nano-pattern for improving productivity. CONSTITUTION: A method for manufacturing the nano-master comprises the steps of forming an aluminum layer on silicon by sputtering; electrolytically polishing it; etching an aluminum oxide layer(12); anodizing the aluminum layer; nano-etching it; hotembossing it to form a nano-pattern on a plastic substrate by the aluminum master comprising an aluminum layer where nano-pattern is formed; etching the aluminum master; depositing a seed layer on the nano-pattern of the plastic master; electroforming a Ni stamper layer; and removing the plastic master from the Ni stamper layer.

Description

MANUFACTORY METHOD OF NANO-MASTER WITH NANO-PATTERN OF HIGH COLUMN-ROW DENSITY

The present invention relates to a nanomaster manufacturing method, and more particularly, to deposit an aluminum layer on the silicon material, and to form a nanopattern by anodizing the aluminum layer, and to produce a nanomaster by hot embossing process It relates to a nanomaster manufacturing method for forming a nanopattern having an aspect ratio.

In general, the nano-industry is one of the areas where the weight of the high-tech science society is increasing day by day.

In particular, the unit size is small, but its utilization has been gradually expanded to increase the demand, but the practical production of various types of nano products properly is not easily solved by various difficulties, and continues to be studied.

And as the transition from the mm industry to the micrometer industry and now from the micrometer industry to the nanometer industry, the production of a wider variety of nano products is required, and nano products are still being applied to various industries such as semiconductors and filters. It is used.

However, the current nano products are patterned by nano-patterns using laser or E-Beam, so the manufacturing cost is high and the technical problem that is difficult due to the characteristics of the laser is difficult to process a large area. There is a limit. In addition, there is a problem in the process and technology, which is difficult to make a product having various types of nanopatterns in a continuous simple process.

The present invention for overcoming the above problems is a manufacturing method for manufacturing a nanomaster for producing a functional surface product having a high aspect ratio nanopattern, the manufacturing process compared to the difficulty of the patterning process shape technology of the nanopattern The goal is to make it simple and inexpensive to implement.

In addition, by depositing aluminum on the silicon material to form a nanopattern on the aluminum layer, a nano aspect formed with a high aspect ratio nanopattern through the hot embossing process for the aluminum layer on which the nanopattern is formed, a more stable form By forming a nano-pattern of the desired shape can be manufactured, and also has the purpose of maximizing the production effect.

Particularly, since the nanomaster of the metal material is formed through the hot embossing process, the etching process, and the electroforming process on the aluminum layer on which the nanopattern is formed, the nanomaster of the metal material is formed without damaging the shape of the original master on which the nanopattern of fine size is formed. By manufacturing, the purpose is to make the nanopattern of the same type as the original master, while being simpler than a manufacturing method such as a stamper.

Nanomaster manufacturing method having a high aspect ratio nanopattern according to the present invention for achieving the above object,

An aluminum layer forming step (S01) in which the aluminum layer 12 is formed by sputtering onto the silicon material 11;

Electrolytic polishing step (S02) to the electrolytic polishing the upper surface of the aluminum layer 12;

An aluminum oxide layer etching step (S03) for etching the oxidized aluminum oxide layer on the upper part of the aluminum layer 12 on which the electrolytic polishing step (S02) is performed;

Anodizing step (S04) for anodizing the aluminum layer 12 on the silicon material 11;

After the anodization step (S04) of the aluminum oxide layer (13) is removed by etching nano-etching step (S05) to be provided with an aluminum master to the aluminum layer 12, the nano-pattern 121 is formed;

The nano-pattern 141 is formed on the plastic substrate 14 by the aluminum master according to the hot embossing process with respect to the aluminum master 12 which is the aluminum layer 12 having the nano-pattern 121 formed by the nano-etching step (S05). Hot embossing step (S06) to be;

For the silicon material 11 and the aluminum master together with the plastic substrate 14 by the hot embossing step S06, the silicon material 11 and the aluminum master are removed from the plastic substrate 14 by an etching process. Aluminum master etching step (S07) to be provided with a plastic master made of a plastic substrate 14 formed with a nano-pattern 141;

A seed layer deposition step (S08) for forming a seed layer layer (15) by deposition on the nano-pattern of the plastic master in the aluminum master etching step (S07);

A stamper pole step (S09) of forming a Ni stamper layer (16) on which a nanopattern (161) is formed by electroforming using Ni on the plastic substrate (14) on which the seed layer layer (15) is formed;

The nano master completion step (S10) is provided to remove the plastic master from the Ni stamper layer 16 so that the nano master is formed as a Ni stamper layer 16 on which the nanopattern 161 is formed. do.

Accordingly, the plastic substrate 14 includes any one of PMMA, PC, and COC, and the hot embossing step (S06) has a glass transition temperature of 110 to 170 ° C., and a pressing force of 3 to 7 kN during the hot embossing process. It may be provided to be made.

In addition, the aluminum master etching step (S07) may be provided so that the etching process is performed for 24 hours in an etching solution of 80 ℃ TMHA or room temperature HNA.

Further, the seed layer 15 may be provided as a nickel layer or a chromium layer.

Since the present invention provided as described above manufactures a nanomaster for producing a functional surface product having a high aspect ratio nanopattern, the manufacturing process is simple and inexpensive compared to the difficulty of the patterning process technology of the nanopattern. It has the effect of being able to implement.

In addition, by depositing aluminum on the silicon material to form a nanopattern on the aluminum layer, a nano aspect formed with a high aspect ratio nanopattern through the hot embossing process for the aluminum layer on which the nanopattern is formed, a more stable form By forming a nanopattern of the desired shape can be produced, and also has the effect of maximizing the production effect.

Particularly, since the nanomaster of the metal material is formed through the hot embossing process, the etching process, and the electroforming process on the aluminum layer on which the nanopattern is formed, the nanomaster of the metal material is formed without damaging the shape of the original master on which the nanopattern of fine size is formed. By manufacturing, compared to the manufacturing method such as a stamper is simple and has the effect of forming a nanopattern of the same form as the original master.

Hereinafter, described in detail with reference to the accompanying drawings.

1 and 4 is a schematic illustration of a nanomaster manufacturing process according to the invention, Figure 1 is an illustration of a process from the aluminum layer forming step to the aluminum oxide layer etching step for the silicon material, Figure 2 Exemplary diagrams for the anodization step and nano-etching step, Figure 3 is an exemplary view for the hot embossing step and aluminum master etching step, Figure 4 is an illustration of the process from the seed layer deposition step to the nano master completion step It is shown.

And Figure 5 is a block diagram of the injection apparatus using a nanomaster according to the present invention, Figure 6 is a flow chart for a nanomaster manufacturing method according to the present invention, Figure 7 and 8 is a nanomaster manufacturing method according to the present invention The optical characteristics table and graph for the anti-reflective panel formed with a nano pattern manufactured by the nickel stamper is shown respectively.

That is, according to the present invention, a method of manufacturing a nanomaster having a high aspect ratio nanopattern is formed such that the aluminum layer 12 is formed by sputtering onto the silicon material 11 as shown in FIGS. 1 to 8. Proceed with the aluminum layer forming step (S01).

As described above, one of the main features of the present invention is the use of a sputtering process for allowing aluminum to be sputtered onto the silicon material 11, and forming a uniform aluminum layer by a sputtering process to form a nanopattern in a good state by an even density. In order to secure the surface roughness of the product at the time of manufacturing the optical product by the nanomaster, it is to prevent the deterioration of the optical properties. Therefore, in order to prevent the optical properties from being impaired due to small defects due to the characteristics of the optical product, the aluminum layer is difficult to process the surface due to its inherent characteristics, and thus the sputtering process is used. After that, an Al film is deposited on the silicon material, and an AAO process is performed on the film.

Since the aluminum layer 12 formed on the silicon material 11 is deposited by sputtering, it is necessary to form an even surface to form a pattern. Therefore, the electrolytic polishing step S02 is performed to polish the upper surface of the aluminum layer 12 through electrolytic polishing.

The system and structure used in the electropolishing process and the subsequent etching process may use a process and equipment in a general AAO process, and may be provided with chemical and voltage conditions as follows.

In other words, the electrolytic solution used in the electrolytic polishing step (S02) is to achieve an even surface, the perchloric acid (HClO4): ethanol (C2H5OH) = 1: 4, the voltage is applied 5 ~ 10 V, the negative electrode and the positive electrode The distance is 5 ~ 10 cm, the reaction temperature is carried out to 7 ~ 10 ℃. And in order to maintain the reaction temperature in the water bath may be performed using a magnetic bar.

In addition, since the oxidized aluminum oxide layer 12 ′ formed on the aluminum layer 12 is generated by the electrolytic polishing step, an aluminum oxide layer etching step S03 is performed to remove the oxidized aluminum oxide layer 12 ′ by etching. At this time, the electrolyte solution is provided to include about 1.8 parts by weight of chromic acid, about 6 parts by weight of phosphoric acid, and proceeds at 60 to 70 ℃ for 50 to 70 minutes. Thus, the upper surface of the aluminum layer 12 is provided to form an even and flat surface.

As described above, the aluminum layer is formed on the silicon material by deposition, but the upper surface of the aluminum is prepared to be flat to form the nanopattern, and then the preparation for forming the nanopattern is completed.

Then, anodization is performed on the electropolished aluminum layer 12 on the silicon material 11 to perform anodization step S04 to cause anodization on the aluminum layer 12.

Thus, the anodization process may be performed using a general anodization system.

Looking at one embodiment of the anodization process in more detail, it is possible to use an electrolyte that may be provided, including hydroxyl (oxaic acid), sulfuric acid, phosphoric acid. In the case of hydroxyl (oxalic acid) with respect to such an electrolyte, the concentration is preferably 0.04 to 0.3 M, the reaction temperature is 4 to 7 ° C, the reaction voltage is 55 to 100 V, and the reaction time is 2 to 20 minutes.

Thus, the aluminum oxide layer 13 may be formed on the entire aluminum layer 12 by anodization so as to have a thickness of about 500 to 600 nm. In this case, the pore size may be 50 to 100 nm, and the depth may be approximately 100 to 400 nm.

In particular, the anodization step may be provided with a cathode of platinum in the electrolyte made of oxalic acid (C2H2O4), the aluminum layer 12 as a positive electrode, between 5 and 10 cm between the negative electrode and the positive electrode 4 ~ 7 ℃ It may be provided so as to be anodized by applying for 1 to 5 minutes at a voltage of 55 ~ 100V. The pores of the formed aluminum oxide layer 13 by anodization are 50 to 100 nm in size and 100 to 400 nm in depth.

After the anodization step (S04), the aluminum oxide layer 13 formed by anodization is removed by etching, so that the nano pattern 121 is formed on the aluminum layer 12 as shown in FIG. Proceed to nano-etching step (S05) to be provided. Therefore, the size of the nanopattern 121 on the aluminum layer 12, which is an aluminum master, generally has a size of about 10 to 400 nm.

The nano-etching step is provided to include about 1.8 parts by weight of chromic acid, about 6 parts by weight of phosphoric acid as an electrolytic solution, it may be provided to be etched for 50 to 70 minutes at 60 ~ 70 ℃.

In addition, the nano-pattern 141 is formed on the plastic substrate 14 by the aluminum master according to the hot embossing process with respect to the aluminum master, which is the aluminum layer 12 having the nano-pattern 121 formed by the nano-etching step (S05). The hot embossing step S06 is performed to be formed.

Accordingly, the plastic substrate 14 may include any one of PMMA, PC, and COC. Hot embossing chamber 20 for performing the hot embossing step (S06) is a plastic substrate 14 between the upper pressing plate 21 and the lower pressing plate 22 of the upper, as shown in the example of the upper end of FIG. The upper portion of the aluminum material and the aluminum master made of the silicon material 11 and the aluminum layer 12 are positioned. The upper pressure plate 21 and the lower pressure plate 22 is applied to a predetermined pressure and heated to perform the hot embossing process.

And the hot embossing step (S06) may be provided so that the glass transition temperature is about 110 ~ 170 ° C the pressing force during the hot embossing process is 3 ~ 7kN.

Looking at the embodiment by a more detailed breakdown, in the case of a plastic substrate made of PMMA, the glass transition temperature can be about 106 ℃, the heating temperature in the hot embossing process can be about 110 ℃, the pressure can be proceeded to be about 3kN. have. In the case of a plastic substrate made of a PC, the glass transition temperature may be about 155 ° C., the heating temperature may be about 160 ° C., and the pressing force may be about 5 kN. Furthermore, in the case of a plastic substrate made of COC, the glass transition temperature may be about 160 ° C., the heating temperature may be about 170 ° C., and the pressing force may be about 7 kN.

Thus, by this hot embossing step (S06), as shown in Figure 3, together with the plastic substrate 14, the silicon layer 11 and the aluminum layer 12 on which the nano-pattern 121, which is an aluminum master, is formed integrally. It is formed by.

Therefore, the nanopattern 141 of the aluminum layer 12 is formed to be in contact with the plastic substrate 14 by the nanopattern 121. Thereafter, the silicon material 11 and the aluminum layer 12, which is an aluminum master, are removed from the plastic substrate 14 by an etching process so that the plastic master is formed to be the plastic substrate 14 on which the nanopatterns 141 are formed. The aluminum master etching step S07 is performed.

The aluminum master etching step (S07) may be provided such that the etching process is performed in the etching chamber 25 for 24 hours in an etching solution of 80 ° C TMHA or room temperature HNA (see the lowermost example of Figure 3).

The nano-pattern 141 is formed on the plastic substrate 14 from which the aluminum layer 12 and the silicon material 11 are removed as shown in FIG. 4, and the nano-pattern of the plastic substrate 14 that is the plastic master 14 A seed deposition step S08 is performed in which a seed layer 15 is formed by deposition on the 141.

The seed layer 15 serves as an electrode in a subsequent electroforming process, and may be mainly provided as a nickel layer or a chromium layer.

As described above, a stamper electroplating step S09 is formed on the plastic substrate 14 on which the seed layer layer 15 is formed to provide an Ni stamper layer 16 on which the nanopattern 161 is formed by electroforming using Ni. Is performed.

The nanomaster completion step (S10) is performed to remove the plastic master from the Ni stamper layer 16 so that the nanomaster becomes the Ni stamper layer 16 on which the nanopattern 161 is formed. The nanopattern 161 of the Ni stamper layer 16, which is the nanomaster, is a nanopattern having a high aspect ratio obtained by anodizing an aluminum layer for the first time, and is formed as it is. It has the advantage of being able to complete a product in a good state and the like.

Of course, the nanopattern 161 of the Ni stamper 16, which is the nanomaster manufactured above, is formed as a groove of the intaglio, as shown in the lower portion of FIG. In order to manufacture a nano-pattern of the nano-pattern in the shape of the embossed projections, the nano-master may be manufactured in the form of a nano-pattern corresponding to the Ni stamper 16 by a method of carrying out the electroforming process.

Therefore, using the nano-master having a high aspect ratio nano-pattern formed as described above, using the injection device as shown in FIG. As a result, display products and optical products have the advantage of being manufactured as surface products in which high aspect ratio nanopatterns are formed.

Thus, FIGS. 7 and 8 illustrate the optical property test using the display panel manufactured using the nanomaster. Since the nanopattern is formed, the antireflection property is good, whereas the light transmittance is good. Able to know. In other words, the display product formed with the nanopattern according to the present invention has excellent light transmittance, while the amount of diffuse reflection is weak. It is seen from the outside and more clearly seen. On the other hand, even though the external light is reflected on the monitor, the diffuse reflectance is better than the conventional one, so that the image that the user wants to see is not blurred, so it can be used regardless of the external light.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art without departing from the spirit and scope of the invention described in the claims below In the present invention can be carried out by various modifications or variations.

1 and 4 is a schematic illustration of a nanomaster manufacturing process according to the present invention.

5 is a block diagram of an injection apparatus using a nanomaster according to the present invention.

Figure 6 is a flow chart for the nanomaster manufacturing method according to the present invention.

7 and 8 are optical properties table and graph for the anti-reflective panel formed with a nano-pattern manufactured by the nickel stamper by the nanomaster manufacturing method according to the present invention.

<Explanation of symbols for the main parts of the drawings>

11 silicon material 12 aluminum layer

13: anodized aluminum layer 14: plastic substrate

15: seed layer 16: Ni stamper layer

20: hot embossing chamber 21: upper pressure plate

22: lower pressure plate 25: etching chamber

121, 141, 161: Nano pattern

Claims (4)

An aluminum layer forming step (S01) in which the aluminum layer 12 is formed by sputtering onto the silicon material 11; Electrolytic polishing step (S02) to the electrolytic polishing the upper surface of the aluminum layer 12; An aluminum oxide layer etching step (S03) for etching the oxidized aluminum oxide layer on the upper part of the aluminum layer 12 on which the electrolytic polishing step (S02) is performed; Anodizing step (S04) for anodizing the aluminum layer 12 on the silicon material 11; After the anodization step (S04) of the aluminum oxide layer (13) is removed by etching nano-etching step (S05) to be provided with an aluminum master to the aluminum layer 12, the nano-pattern 121 is formed; The nano-pattern 141 is formed on the plastic substrate 14 by the aluminum master according to the hot embossing process with respect to the aluminum master 12 which is the aluminum layer 12 having the nano-pattern 121 formed by the nano-etching step (S05). Hot embossing step (S06) to be; For the silicon material 11 and the aluminum master together with the plastic substrate 14 by the hot embossing step S06, the silicon material 11 and the aluminum master are removed from the plastic substrate 14 by an etching process. Aluminum master etching step (S07) to be provided with a plastic master made of a plastic substrate 14 formed with a nano-pattern 141; A seed layer deposition step (S08) for forming a seed layer layer (15) by deposition on the nano-pattern of the plastic master in the aluminum master etching step (S07); A stamper pole step (S09) of forming a Ni stamper layer (16) on which a nanopattern (161) is formed by electroforming using Ni on the plastic substrate (14) on which the seed layer layer (15) is formed; The nano master completion step (S10) is provided to remove the plastic master from the Ni stamper layer 16 so that the nano master is formed as a Ni stamper layer 16 on which the nanopattern 161 is formed. Nanomaster manufacturing method having a high aspect ratio nanopattern. The method of claim 1, The plastic substrate 14 is provided including any one of PMMA, PC, COC, The hot embossing step (S06) is a glass transition temperature is 110 ~ 170 ℃ to the nanoemperature manufacturing method having a high aspect ratio nano pattern, characterized in that the pressing force during the hot embossing process is made to be 3 ~ 7kN. The method of claim 1, The aluminum master etching step (S07) is a nanomaster manufacturing method having a high aspect ratio nanopattern, characterized in that the etching process is performed for 24 hours in an etching solution of 80 ℃ TMHA or room temperature HNA. The method according to any one of claims 1 to 3, The seed layer layer 15 is a nano-master manufacturing method having a high aspect ratio nanopattern, characterized in that provided with a nickel layer or a chromium layer.

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