KR20090112474A - Substrate for gas separation and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A method for producing a support for vapor separation membrane is provided to produce a support of high activity with low cost. CONSTITUTION: A support for vapor separation membrane comprises: a substrate(120) which comprises sintered reaction sintering silicon nitride(Sintered RBSN); and an middle layer(140) comprising reaction-bonded silicon nitride(RBSN) on one side of the substrate and forming micropore under 0.5um.

Description

Substrate for gas separation and method for manufacturing the same

1 is a cross-sectional view showing the configuration of a support for a gas separation membrane according to the present invention.

Figure 2 is an enlarged photograph of a substrate which is one configuration of a support for a gas separation membrane according to the present invention.

Figure 3 is a process flow chart showing a method for producing a support for a gas separation membrane according to the present invention.

Figure 4 is a process flow chart showing in detail a step of forming a substrate in a method of manufacturing a support for a gas separation membrane according to the present invention.

5 is a process flowchart showing in detail an intermediate layer forming step in the method of manufacturing a support for a gas separation membrane according to the present invention.

Figure 6 is a graph showing the porosity change of the substrate according to the change in the addition amount of the pore-forming agent during the substrate forming step is a step in the manufacturing method of the support for gas separation membrane according to the present invention.

7 is a graph showing a change in the average pore size of the substrate according to the addition amount of the pore-forming agent during the substrate forming step which is one step in the method for producing a support for a gas separation membrane according to the present invention.

8 is an enlarged photograph showing a structure change of a substrate according to a change in sintering temperature during the substrate forming step, which is one step in the method for preparing a support for a gas separation membrane according to the present invention.

9 is a graph showing a change in porosity of the substrate according to the sintering time change during the substrate forming step which is one step in the method for producing a support for a gas separation membrane according to the present invention.

10 is a graph showing a change in the average pore size of the substrate according to the change in sintering time during the substrate forming step of the step of producing a support for a gas separation membrane according to the present invention.

Figure 11 is an enlarged photograph showing the change in the structure of the substrate according to the sintering time change during the substrate forming step of the first step in the method for producing a support for a gas separation membrane according to the present invention.

12 is a graph showing a change in porosity of the substrate according to the addition amount of the oxide sintering aid during the substrate forming step which is one step in the method for producing a support for a gas separation membrane according to the present invention.

Figure 13 is a photograph showing a change in porosity of the substrate according to the amount of addition of the oxide sintering aid during the substrate forming step is a step in the method for producing a support for a gas separation membrane according to the present invention.

Figure 14 is a graph showing the porosity change of the substrate according to the composition change of the oxide sintering aid during the substrate forming step is a step in the method for producing a support for a gas separation membrane according to the present invention.

Figure 15 is a photograph showing the porosity change of the substrate according to the composition change of the oxide sintering aid during the substrate forming step is a step in the method for producing a support for a gas separation membrane according to the present invention.

Figure 16 is a graph showing the porosity change of the substrate according to the size change of the silicon powder during the substrate forming step of the step of producing a support for a gas separation membrane according to the present invention.

Figure 17 is a photograph showing a change in porosity of the substrate according to the size change of the silicon powder during the substrate forming step of the step of producing a support for a gas separation membrane according to the present invention.

18 is a graph showing the porosity change of the substrate according to the size change of the pore-forming agent in the substrate shape step of the substrate separation step in the method of manufacturing a support for a gas separation membrane according to the present invention.

Figure 19 is an enlarged photograph showing the surface state of the intermediate layer upon completion of the slurry drying process of the intermediate layer forming step of the step of producing a support for a gas separation membrane according to the present invention.

20 is an enlarged photograph showing the surface state of the intermediate layer when the slurry nitriding process of the intermediate layer forming step is one step in the method for producing a support for a gas separation membrane according to the present invention.

Explanation of symbols on the main parts of the drawings

100. Support 120. Substrate

122. Coarse Pore 140. Middle Floor

S100. Substrate formation step S110. Mixing process

S120. Molding process S130. Substrate Drying Process

S140. Pyrolysis Process S150. Substrate Nitriding Process

S160. Sintering process S200. Interlayer Formation Step

S210. Slurry Forming Process S220. Slurry Film Formation Process

S230. Slurry drying process S240. Slurry Nitriding Process

The present invention is composed of a substrate formed with coarse pores made of SRBSN (Sintered RBSN) and an intermediate layer formed of micropore formed of reaction-bonded silicon nitride (RBSN) on the upper surface of the substrate. The present invention relates to a support for a gas separation membrane having an inclined pore structure, which has a high conformity and a cost competitiveness by synthesizing a silicon nitride material through the nitriding reaction of silicon, which is a low-cost raw material powder.

Recently, research on non-oxide-based ceramic membrane (membrane) materials for high temperature operation has been actively conducted, and since the alumina material is used exclusively as a support of the membrane, a gas separation membrane due to the difference in the characteristics of the membrane and the support The high temperature stability of the device is in a weak state.

In general, as the gas separation membrane material, a polymer or a membrane made of a material such as palladium (Pd) has been mainly used, but the polymer membrane cannot be used at a high temperature of 150 ^o C or higher, and palladium (Pd) has a high price and carbon monoxide ( CO) or sulfide has the disadvantage of deteriorating function due to poisoning.

In order to solve such problems and to realize high efficiency by operating the gas separation membrane at high temperature, studies on ceramic material separation membranes such as amorphous silica and zeolite have been conducted. It is pointed out that it becomes unstable and causes the fall of selectivity and permeability.

Currently, researches on non-oxide-based ceramic material separators such as silicon carbide, which are known to have excellent mechanical and thermal properties as compared to the oxide-based ceramic separators, have been actively conducted.

On the other hand, in relation to the porous support positioned below the separator to support the separator, an alumina material, which is an oxide ceramic, is uniquely used.

Therefore, the gas separation membrane composed of "non-oxide ceramic separator-oxide-based alumina support" has difficulty in achieving stable high temperature operation due to the difference in properties between the two materials and the poor high temperature stability of the alumina support itself.

Among the studies on the non-oxide porous ceramic material, the data related to the silicon nitride material of the open-pore structure which can be used as the support of the gas separation membrane device are as follows.

Korean Patent Office Registration No. 0050560 discloses a porous silicon nitride material by SHS (Automatic Combustion Synthesis) method using [Si + Si3N4] mixed powder as a starting material.

However, the above-described technique has difficulty in producing the pore size and shape required as a support.

Korean Patent Office Registration No. 0311694 discloses a method for producing porous sialon material by voids generated by low melting spherical powder being sucked between particles by capillary force during liquid phase sintering using low melting spherical powder as a sintering aid. It is.

However, the pores formed by the above-described manufacturing method has a size of several millimeters, and the applied material was developed as a refractory tile material such as a space shuttle, and is not suitable as a support for a gas separation membrane device.

To date, research on porous silicon nitride materials has been the most active in Japan and has high technology in the field of gas separation membrane equipment.

That is, Japanese Patent Application Laid-Open No. 2001-206775 discloses a method for producing porous silicon nitride having pores having a diameter of 30-100 nm by a sintering process of a powder mixture of [Si + SiO2 + C] composition at a temperature of 1100-1400 ^o C. Posted.

However, the pore structure formed according to the above method is suitable for use as an intermediate layer, but it is judged that it is difficult to be employed because it is a small pore size to be used as a support by itself.

An object of the present invention is to solve the above problems, a substrate consisting of coarse pores formed of sintered silicon nitride (SRBSN, Sintered RBSN), and a reaction-bonded silicon nitride (RBSN) on the upper surface of the substrate An object of the present invention is to provide a support for a gas separation membrane comprising an intermediate layer formed with micropores.

Another object of the present invention is to provide a support for a gas separation membrane, which is not only inexpensive using a composition containing silicon powder, a sintering aid and a pore-forming agent, but also easy to control porosity and pore size, without using expensive silicon nitride powder. It is in doing it.

The support for gas separation membrane according to the present invention comprises a substrate formed of post-sintered reaction silicon sintered nitride (SRBSN, Sintered RBSN) formed with coarse pores of 2 μm or less, and reaction-bonded silicon nitride (RBSN) on one surface of the substrate. It characterized in that it comprises an intermediate layer made of micropores of less than 0.5㎛.

In addition, the support for a gas separation membrane according to the present invention comprises a substrate having coarse pores of 2 μm or less formed of rod-like grains, and micropores of 0.5 μm or less formed of one or more particles of needle and granules. It is characterized by including the intermediate layer.

The substrate is characterized in that it comprises a silicon powder having a diameter of 1 ~ 100㎛ and an oxide sintering aid is added 10wt% to the weight of the silicon powder.

The coarse pores are characterized by having a spherical shape.

In the method for producing a support for a gas separation membrane according to the present invention, a substrate in which a silicon powder, an oxide sintering aid, and a pore-forming agent are formed of a substrate material having a weight ratio of 100 (100) to (2 to 10): (20 to 50) is formed. Forming step, characterized in that consisting of the intermediate layer forming step of forming the intermediate layer with the intermediate layer material silicon powder, water and the organic binder in a weight ratio of 100: 300: 1.

The substrate forming step includes a mixing process of mixing the substrate material, a molding process of molding the mixed mixed material into a substrate shape, a substrate drying process of removing moisture contained in the molded substrate, and the pore forming agent. It is characterized by consisting of a pyrolysis process to remove, a substrate nitriding process of nitriding the substrate from which the pore-forming agent is removed in a nitrogen atmosphere, and a sintering process of sintering the nitrided substrate.

The pore-forming agent is characterized in that the PMMA polymer or wood powder is applied.

The sintering process is characterized in that carried out for 0.5 to 8 hours at 1600 ~ 1800 ℃.

The pyrolysis process is characterized in that carried out for 1 hour or more at a temperature of 600 ℃ or less.

The intermediate layer forming step includes a slurry forming process of forming a slurry in which silicon powder, water and an organic binder are mixed, a slurry forming process of depositing a slurry on one surface of the substrate, and a slurry drying process to remove moisture contained in the deposited slurry. And nitriding the dried slurry in a nitrogen atmosphere to form an intermediate layer.

The slurry nitriding process is characterized in that it is maintained for 3 to 6 hours at 1200 ~ 1400 ℃ under nitrogen atmosphere or nitrogen atmosphere containing hydrogen.

As described above, according to the present invention, there is an advantage in that a support of a gas separation membrane device having a porous pore structure can be manufactured by using a low cost silicon powder as a starting material instead of expensive silicon nitride.

Hereinafter, a configuration of a support for a gas separation membrane according to the present invention will be described with reference to FIGS. 1 and 2.

1 is a cross-sectional view showing the configuration of a support for a gas separation membrane according to the present invention, and FIG. 2 is an enlarged photograph of a substrate which is one configuration of the support for a gas separation membrane according to the present invention.

As shown in these drawings, the support 100 is provided on one surface of a separator (not shown) to support the separator, and is composed of large sintered reaction silicon nitride (SRBSN, Sintered RBSN) and has a coarse pore of 2 μm or less. The substrate 120 is formed, and an intermediate layer 140 formed of reaction-bonded silicon nitride (RBSN) on one surface of the substrate 120 has micropores of 0.5 μm or less formed thereon.

The substrate 120 is made of coarse columnar grains (rod-like grain), the spherical coarse pores 122 are formed between the coarse columnar. The coarse pores 122 are formed while removing the pore former which is a raw material of the substrate 120.

The intermediate layer 140 is located on the right side of the substrate 120, and is composed of one or more particles of needles and granules, and a separator (not shown) is positioned on the right side of the intermediate layer 140.

Hereinafter, a method of manufacturing the support for gas separation membrane 100 configured as described above will be described with reference to FIGS. 3 to 5.

3 is a process flow chart illustrating a method of manufacturing a support for a gas separation membrane according to the present invention, and FIG. 4 is a process flow chart showing in detail a substrate forming step as a step in the method for preparing a support for a gas separation membrane according to the present invention. 5 is a process flowchart showing in detail an intermediate layer forming step (S200) of one step in the method for preparing a support for a gas separation membrane according to the present invention.

First, the method of manufacturing the support for the gas separation membrane is largely made of a substrate forming step (S100) and an intermediate layer forming step (S200), and the substrate forming step (S100) and the intermediate layer forming step (S200) have a plurality of processes. It is configured to include.

In the substrate forming step (S100), the substrate 120 is formed of a substrate material having a silicon powder, an oxide sintering aid, and a pore-forming agent composed of a weight ratio of 100: (2 ~ 10) :( 20 ~ 50). The intermediate layer forming step (S200) is a step of forming the intermediate layer 140 through a plurality of processes using an intermediate layer material in which silicon powder, water, and an organic binder are mixed in a weight ratio of 100: 300: 1.

The substrate forming step S100 and the intermediate layer forming step S200 will be described in more detail with reference to FIGS. 4 and 5.

First, the substrate forming step (S100) includes a mixing process (S110) of mixing the substrate materials, a molding process (S120) of molding the mixed mixture material into a shape of the substrate 120, and the molded substrate 120. Substrate drying process (S130) for removing the moisture, thermal decomposition process (S140) for removing the pore-forming agent, substrate nitriding process (S150) for nitriding the substrate 120 from which the pore-forming agent is removed in a nitrogen atmosphere; The sintering process (S160) for sintering the nitrided substrate 120 is made.

In the mixing process, a silicon powder having a diameter of 1 to 100 μm is used as the substrate material, and a polymer or wood powder is used as the pore forming agent.

In addition, the oxide sintering aid comprises at least one of Y ₂ O ₃ , Al ₂ O ₃ , to mix the substrate material in the above composition ratio using a method such as ball milling, planetary milling, kneading, etc. (Mixing process: S110).

Subsequently, the substrate materials mixed with each other are molded to have a shape of the substrate 120 by using a press method, an extrusion method, a slip casting method, etc. (molding process: S120).

Then, the moisture contained in the molding formed to have the shape of the substrate 120 is put into a drying chamber and dried at a predetermined time at 100 to 120 ° C. (substrate drying process: S130)

The molded body from which moisture is removed through the substrate drying process (S130) is maintained at a temperature of 600 ° C. or lower for at least 1 hour to undergo a pyrolysis process (S140) in which the pore forming agent is pyrolyzed and removed.

At this time, the pore-forming agent is oxidized and removed to form coarse pores 122 having a shape corresponding to the pore-forming agent. That is, the coarse pores 122 has a spherical shape.

The molded article from which the pore-forming agent has been removed is maintained for 3 to 6 hours in a temperature range of 1200 to 1400 ° C. under a nitrogen atmosphere including hydrogen, so that residual silicon is not detected by passing through the substrate nitriding process (S150).

As the final process of the substrate forming step (S100), the nitrided substrate 120 is maintained for 0.5 to 8 hours in the 1600 ~ 1800 ℃ temperature range under a pressurized or atmospheric nitrogen atmosphere to proceed the sintering process (S160).

In this case, the nitrided substrate 120 is grown to produce a substrate 120 having coarse pores 122 by growing particles and pores.

On the other hand, the intermediate layer forming step (S200), as shown in Figure 5, a slurry forming process of forming a slurry in which silicon powder, water and an organic binder is mixed (S210), and a slurry film formation to form a slurry on one surface of the substrate 120 Process (S220), slurry drying step of removing the moisture contained in the deposited slurry (S230), and the slurry is nitriding process (S240) to form the intermediate layer 140 by nitriding the dried slurry in a nitrogen atmosphere.

The slurry forming process (S210) is a process of preparing a slurry by a method such as ball milling, planetary milling, ultrasonic vibration, etc. of the intermediate layer material having the composition as described above.

Then, the slurry is deposited on one surface of the substrate 120 made in the substrate forming step (S100) (slurry film formation process: S220). In this case, various methods such as a dip coating method, a spin coating method, and a spray method can be applied to the method of forming a slurry.

When the slurry is formed on one surface of the substrate 120, a slurry drying process (S230) for removing moisture included in the deposited slurry is performed.

In the slurry drying process (S230), the substrate 120 in which the slurry is formed is charged into a drying chamber, and the moisture is removed by heating to a temperature of 100 to 120 ° C.

Then, the slurry nitriding process (S240), which is the last process of the intermediate layer forming step (S200), is performed.

The slurry nitriding process (S240) is a process for heating for 3 to 6 hours in a temperature range of 1200 ~ 1400 ℃ in a nitrogen atmosphere or nitrogen atmosphere containing hydrogen, silicon is not remaining when the slurry nitriding process is completed.

When the above process is sequentially performed, the intermediate layer 140 maintains a coated state on one surface of the substrate 120 and the substrate 120 is manufactured.

Hereinafter, a method for preparing a support for a gas separation membrane according to the present invention was tested through various examples as shown in FIGS. 6 to 20.

In the embodiment of the present invention, the oxide sintering aid and the pore-forming agent are expressed as part (g) added amount per 100g of silicon powder as the main raw material, the composition of the oxide sintering aid is Y ₂ 0 ₃ is "Y", Al ₂ O ₃ Is denoted "A".

In addition, when the oxide sintering aid was added at the same time as Y ₂ 0 ₃ -Al ₂ O ₃ , it was designated as “YA”.

6 to 18 illustrate experiments by changing various conditions of the substrate forming step, and FIG. 19 shows slurry drying in the intermediate layer forming step (S200), which is one step in the method for preparing a support for a gas separation membrane according to the present invention. An enlarged photograph showing the surface state of the intermediate layer is shown when the process (S230) is completed, and FIG. 20 shows the intermediate layer 140 when the slurry nitriding process is completed in the intermediate layer forming step, which is one step in the method for preparing a support for a gas separation membrane according to the present invention. An enlarged photograph is shown showing the surface state of a.

Example 1

A composition in which a silicon powder having a diameter of 7 μm and a PMMA pore former having a diameter of 8 μm was added to a 4part YA oxide sintering aid of 30 parts or less was mixed by planetary milling for 4 hours, and the mixed powder was dried by a solvent after press drying. Thereafter, the pore-forming agent was thermally decomposed by heat treatment at 600 ^° C. for 1 hour.

After 4 hours at 1350 ^o C in a nitrogen atmosphere containing 5% hydrogen to synthesize the silicon in the molded body through the nitriding reaction to silicon nitride, and then sintered the molded body at 1700-1900 ^o C for 2 hours to coarse pores (122 After sintering reaction sintered silicon nitride substrate was prepared.

6 and 7, it can be seen that the porosity increases as the amount of the pore-forming agent added increases.

In addition, as the sintering temperature increases during the sintering process, it can be seen that the porosity of the substrate 120 decreases.

That is, as the sintering temperature is increased as shown in FIG. 8, the particles grow in the coarse columnar shape, and the pores are coarse as shown in FIG. 8 (d) to form the spherical coarse pores 122. Able to know.

Example 2

A substrate material including a silicon powder having a diameter of 7 μm, a 4part YA sintering aid, and a 20part PMMA oxide pore former having a diameter of 8 μm was manufactured into the substrate 120 through the same process as in [Example 1].

At this time, in the sintering process (S160), the sintering temperature was fixed at 1700 ^o C and the holding time was changed to 0, 0.5, 2, 8 hours to observe the change in porosity and average pore size.

As a result, it can be seen that a slight decrease in porosity occurs as the sintering time increases as shown in FIG. 9, and the average pore size gradually increases as shown in FIGS. 10 and 11.

Example 3

The substrate 120 was prepared by adding 2 parts, 4 parts, and 8 parts of an oxide sintering aid consisting of YA to a silicon powder having a diameter of 7 μm and a 20 part PMMA pore forming agent having a diameter of 8 μm, respectively. Prepared.

At this time, the sintering process (S160) was maintained at a sintering temperature of 1700 ^o C for 2 hours, the results are as shown in Figure 12 and 13.

That is, as the weight ratio of the oxide sintering aid increases, it can be seen that the porosity gradually decreases as shown in FIGS. 12 and 13.

Example 4

Substrate 120 was prepared by the same process as in [Example 1], a substrate material including silicon powder having a diameter of 7 μm, a 20part PMMA pore former having a diameter of 8 μm, and 4 parts of YA and Y oxide sintering aids. .

At this time, the sintering process (S160) was maintained at a sintering temperature at 1700 ^o C for 2 hours, the results are as shown in Figs.

That is, as the composition of the oxide sintering aid is changed, the porosity of the substrate 120 has hardly changed, but the pore size shows a difference.

More specifically, when YA is applied as the oxide sintering aid, it can be confirmed through FIG. 15 that coarse pores are formed than when Y is applied.

Example 5

Substrate material 120 was prepared by mixing a silicon powder having a diameter of 2 μm and a silicon powder having a diameter of 7 μm with a 20 part PMMA pore former having a diameter of 8 μm and a 4 part YA oxide sintering agent. ) Was prepared.

At this time, the sintering process (S160) was maintained for 2 hours at a sintering temperature of 1700 ^o C, the results are as shown in Figures 16 and 17.

That is, the diameter size difference of the silicon powder did not have a significant difference in porosity, but when the silicon powder having a diameter of 7 μm was included as shown in FIG. 17, the growth of particles and pores was more active. Able to know.

Example 6

After mixing the silicon powder with a diameter of 7 ㎛ and the 4part YA oxide sintering aid, adding the PMMA pore-forming agent mixed with a diameter of 8 ㎛ and 20 ㎛ and 8 ㎛ and 20 ㎛, the substrate through the same process as in [Example 1] 120 was prepared.

At this time, the sintering temperature in the sintering process (S160) was maintained for 1 hour at 1700 ^o C, the result is as shown in FIG.

That is, the substrate 120 in which the silicon powder having a diameter of 8 mu m is used as the raw material powder, and the substrate 120 in which the silicon powder having the diameter of 20 mu m is used as the raw material powder, is a silicon powder having a diameter of 8 mu m and a silicon having a diameter of 20 mu m. It can be seen that the porosity is relatively lower than when the powder is mixed at 50:50.

Example 7

Dip a slurry containing silicon powder, organic binder and water onto a substrate 120 made of a substrate material comprising a silicon powder having a diameter of 7 μm, a 4part YA oxide sintering aid, and a 20part PMMA pore former having a diameter of 8 μm. The intermediate layer 140 was formed by coating and then dried.

At this time, the silicon powder used in the slurry production is a silicon powder milled into a submicrometer size by milling a silicon powder having an average diameter of 2㎛ by planetary method, and an average diameter of 2㎛ without using a planetary method And 7 μm silicon powder were applied, respectively, and the mixing ratio of silicon powder and water was 1: 3, and 1 wt% of the organic binder was added to the weight of the silicon powder.

As a result, cracks occurred in the case of the intermediate layer 140 formed of the silicon powder pulverized to submicrometer size as shown in FIG. 19, but the intermediate layer to which the average diameter of 2 μm and 7 μm silicon powder to which the Franny method was not applied was applied ( In the case of 140), the appearance was similar.

Example 8

The slurry was subjected to dip coating on the substrate 120 formed of a silicon powder having a diameter of 7 μm, a 4part YA oxide sintering aid, and a 20part PMMA pore forming agent having a diameter of 8 μm using a 2 μm diameter silicon powder of Example 7. The film was formed, and the intermediate layer 140 was formed by performing a nitriding reaction at 1350 ^° C. under a nitrogen atmosphere containing 5% hydrogen and 100% nitrogen atmosphere.

As a result of the experiment it can be seen that even when not included than when containing 5% hydrogen as shown in Figure 20, even surface state.

The scope of the present invention is not limited to the above-exemplified embodiments, and many other modifications based on the present invention may be made by those skilled in the art within the above technical scope.

As described above, according to the manufacturing method of the present invention, there is an advantage that a high-performance support can be manufactured at low cost by using a low-cost silicon powder instead of expensive silicon nitride powder.

In addition, since the substrate and the intermediate layer are made of the same silicon nitride material, the matching between the two layers is excellent, and the moldability is improved by the low shrinkage rate inherent in reaction sintering, thereby forming a complex shape.

In addition, the present invention is advantageous in terms of the high temperature stability of the material itself, as well as in terms of compatibility such as thermal expansion coefficient with the non-oxide-based ceramic membrane material, which is advantageous for high temperature operation of the gas separation membrane device.

Claims (11)

A substrate made of post-sintered reaction sintered silicon nitride (SRBSN, Sintered RBSN) and having coarse pores of 2 μm or less, A support for a gas separation membrane, comprising an intermediate layer formed of reaction-bonded silicon nitride (RBSN) on one surface of the substrate to form micropores of 0.5 μm or less. A substrate composed of coarse columnar particles (rod-like grains) having coarse pores of 2 μm or less, A support for a gas separation membrane, comprising an intermediate layer formed of one or more particles of needle and granules and having micropores of 0.5 μm or less. The method of claim 1 or 2, wherein the substrate, Silicon powder having a diameter of 1 ~ 100㎛, Retardant for gas separation membrane comprising an oxide sintering aid is added to the weight of the silicon powder 10wt%. The method of claim 3, wherein the coarse pores, A gas separation membrane support, characterized in that it has a spherical shape. A substrate forming step of forming a substrate using a substrate material having a silicon powder, an oxide sintering aid, and a pore-forming agent in a weight ratio of 100: (2-10) :( 20-50), A method for producing a support for a gas separation membrane, comprising an intermediate layer forming step of forming an intermediate layer with an intermediate layer material in which silicon powder, water, and an organic binder are mixed in a weight ratio of 100: 300: 1. The method of claim 5, wherein the substrate forming step, A mixing process of mixing the substrate material, A molding process of molding the mixed mixture material into a substrate shape; A substrate drying process for removing moisture contained in the molded substrate, Pyrolysis to remove the pore-forming agent, A substrate nitriding process of nitriding the substrate from which the pore-forming agent is removed in a nitrogen atmosphere; Method for producing a support for a gas separation membrane, characterized in that consisting of a sintering process for sintering the nitrided substrate. The method of claim 6, wherein the pore-forming agent is a PMMA polymer or wood powder is applied. The method of claim 6, wherein the sintering process is performed at 1600 to 1800 ° C. for 0.5 to 8 hours. According to claim 6, wherein the pyrolysis process, Method for producing a support for a gas separation membrane, characterized in that carried out for 1 hour or more at a temperature of 600 ℃ or less. The method of claim 5, wherein the intermediate layer forming step, A slurry forming process of forming a slurry in which silicon powder, water and an organic binder are mixed; A slurry deposition process of depositing a slurry on one surface of the substrate; Slurry drying process for removing moisture contained in the deposited slurry, Method for producing a support for a gas separation membrane, characterized in that made of a slurry nitriding process of forming the intermediate layer by nitriding the dried slurry in a nitrogen atmosphere. The method of claim 10, wherein the slurry nitriding process, Method for producing a support for a gas separation membrane, characterized in that maintained for 3 to 6 hours at 1200 ~ 1400 ℃ under a nitrogen atmosphere or nitrogen atmosphere containing hydrogen.

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