KR20090071021A - Processing system and method for fabricating semiconductor device - Google Patents

Abstract

A processing system and a manufacturing method of a semiconductor device using the same are provided to prevent the excessive generation of the reaction by-product amount by steadily controlling the amount of by-product in the chamber. A supporting member(103) is arranged inside a chamber(101). A heating plate(105) is arranged on the supporting member. A wafer(110) is settled on the heating plate. The first reacting gas providing unit(161) provides the first reaction gas into the chamber. The second reacting gas providing unit(162) provides the second reaction gas into the chamber. A detection unit(140) is arranged inside the chamber and detects the amount of the by-product. The detection unit and the first reacting gas providing unit are connected to a controller(150).

Description

PROCESSING SYSTEM AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE}

The embodiment relates to a process system and a method of manufacturing a semiconductor device using the same.

In general, in semiconductor devices, electronic devices, and the like, a conductor film such as aluminum (Al) or tungsten (W) is deposited on an insulating film as a wiring forming technique, and then the conductor film is subjected to a conventional photolithography process and a dry method. A technique of forming a metal wiring by patterning through a dry etching process has been established and widely used in this field.

In general, in order to electrically connect aluminum wires or tungsten wires formed on different insulating films, via holes are formed in the insulating film and metal is embedded in the via holes, and the embedded metal penetrates into the insulating film to reduce device characteristics. A barrier film for preventing is formed.

As the barrier layer, a double layer of a TiN / Ti layer is generally used and is deposited by physical vapor deposition (PVD).

Recently, in the device using a VLSI-class aluminum wiring process having a line width of 0.18 micro or less, the size of the via hole is also reduced, and ALD (atomic layer deposition) method is used to fill tungsten in the small via hole. Various technological developments are being made.

Embodiments relate to a process chamber capable of automatically detecting an amount of reaction by-products in a chamber in a deposition chamber used in a semiconductor device manufacturing process and controlling a flow rate of a reaction gas, and a method of manufacturing a semiconductor device using the same.

The process system according to the embodiment includes a chamber, a first reaction gas supply unit supplying a first reaction gas to the chamber, a second reaction gas supply unit supplying a second reaction gas to the chamber, the first reaction gas and the first reaction gas. And a control unit for detecting a concentration of the reaction by-product of the second reaction gas and a control unit for controlling at least one of the first and second reaction gas supply units according to the concentration of the reaction by-product provided by the detection unit.

In the method of manufacturing a semiconductor device using the process system according to the embodiment, the method comprising: disposing a wafer having an insulating film having a via hole in a chamber, a first reaction gas containing tungsten and SiH ₄ and H _{2 in} the chamber; Supplying a second reaction gas including at least one of the above, the first reaction gas and the first reaction gas react to generate a tungsten nucleus on the insulating layer, and reaction by-products of the first and second reaction gases Adjusting the supply amount of the first reaction gas by detecting a concentration thereof, removing the reaction by-products, and growing a nucleus formed on the insulating layer to form a tungsten layer.

The embodiment can automatically detect the amount of by-products in the chamber in the deposition chamber used in the semiconductor device manufacturing process to prevent defects caused by penetration of the reaction by-product into the barrier film and to prevent the occurrence of defects in via hole filling. There is an effect that can improve the yield.

The embodiment can stably control the amount of reaction by-products in the chamber in the nucleation step, which greatly affects the via hole filling in the deposition chamber, thereby preventing excessive generation of reaction by-products, thereby improving the reliability of the process. The system can be controlled so that the process can be controlled in real time and the accuracy of the process can be improved.

Hereinafter, a process system according to embodiments will be described in detail with reference to the accompanying drawings. Hereinafter, when referred to as "first", "second", and the like, this is not intended to limit the members but to show that the members are divided and have at least two. Thus, when referred to as "first", "second", etc., it is apparent that a plurality of members are provided, and each member may be used selectively or interchangeably. In addition, the size (dimensions) of each component of the accompanying drawings are shown in an enlarged manner to help understanding of the invention, the ratio of the dimensions of each of the components shown may be different from the ratio of the actual dimensions. In addition, not all components shown in the drawings are necessarily included or limited to the present invention, and components other than the essential features of the present invention may be added or deleted. In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure is "on / above / over / upper" of the substrate, each layer (film), region, pad or patterns or In the case described as being formed "down / below / under / lower", the meaning is that each layer (film), region, pad, pattern or structure is a direct substrate, each layer (film), region, It may be interpreted as being formed in contact with the pad or patterns, or may be interpreted as another layer (film), another region, another pad, another pattern, or another structure formed in between. Therefore, the meaning should be determined by the technical spirit of the invention.

1 is a block diagram showing a process system according to an embodiment.

According to the embodiment, the process system 100 may be applied to atom layer deposition (ALD) equipment, but is not limited thereto. The process system 100 may be applied to any deposition equipment capable of controlling the flow rate of the reaction gas by sensing the amount of reaction by-products. .

Referring to FIG. 1, a process system 100 according to an embodiment includes a chamber 101, a support member 103 disposed in the chamber 101, and a heating plate disposed on the support member 103. plate 105, a wafer 110 seated on the heating plate 105, a first reactive gas supply unit 161 for providing a first reactive gas in the chamber 101, and a first reactive gas supply unit 161 in the chamber 101. A second reaction gas supply unit 162 for providing a second reaction gas and a detection unit 140 disposed in the chamber 101 to detect the amount of reaction by-products.

The detection unit 140 and the first reaction gas supply unit 161 are connected to the control unit 150, and the control unit 150 measures and analyzes the amount of reaction by-products detected by the detection unit 140 to determine the first amount. 1 The reaction gas supply unit 161 is controlled.

The detector 140 may include at least one residual gas analyzer (RGA).

The chamber 101 is connected to the exhaust pipe 107, and the exhaust pipe 107 pumps and exhausts the residual reaction gas and the reaction by-products.

In order to form a tungsten (W) film formed on the wafer 110, the first reaction gas comprises WF ₆ . The second reaction gas includes SiH ₄ , H ₂ .

The first reactant gas and the second reactant gas react in the chamber 101, and tungsten is deposited on the wafer 110 to generate nuclei.

Since the first reaction gas and the second reaction gas react with each other and tungsten is deposited on the wafer 110 in the first reaction gas, fluorine (F) and the second reaction gas in the first reaction gas Reaction produces fluorine-based reaction byproducts.

The reaction byproduct may be HF.

The production amount of the reaction byproduct may be proportional to the injection amount of the first reaction gas.

The tungsten film formed on the wafer 110 may be a metal film for forming a contact electrode.

An insulating layer having a via hole is formed on the wafer 110, and tungsten is deposited on the insulating layer to be embedded in the via hole to form a tungsten contact electrode.

Increasing the amount of the first reaction gas containing the tungsten atoms improves the buried characteristics of the tungsten film in the via holes and increases the deposition rate, but generates excessive amounts of reaction byproduct HF. Accordingly, the reaction byproduct penetrates into the barrier film at the inlet of the via hole and reacts with Ti. When the HF reacts with Ti, it causes TIF ₄ gas, which causes the barrier layer to be destroyed, causing a volcano defect. When the amount of the reaction by-product is measured and the threshold value is exceeded, the first reaction gas supply unit 161 is controlled.

The controller 150 receives the amount of the reaction byproduct detected by the detector 140 and compares the reaction byproduct with the critical lower limit dimension LLS and the critical upper limit dimension USL.

If the amount of the reaction by-product is within the critical lower limit dimension and the critical upper limit dimension, the flow rate of the first reaction gas is maintained at a current state, and if the amount of the reaction by-product is smaller than the critical lower limit dimension, the amount of the first reactive gas is Increase the amount of the reaction by-product, and the amount of the first reaction gas decreases.

2 is a graph showing the operation of a process system according to an embodiment.

Referring to the graph of FIG. 2, the X axis shows the deposition time and the Y axis shows the amount of reaction by-product HF generated by the reaction of the first reaction gas and the second reaction gas.

As the deposition time passes, the thickness of the tungsten film deposited on the wafer 110 becomes thicker, thereby increasing the amount of reaction by-products.

The detection unit 140 measures the amount of the reaction by-product in real time, and transmits the result to the control unit 150.

The controller 150 receives the amount of the reaction by-product measured during the process time and compares the amount of the reaction by-product with a threshold value in real time and controls the first reaction gas supply unit 161 according to the result.

The embodiment measures the HF concentration in the chamber 101, and when the HF concentration is generated above the threshold upper limit value and below the threshold lower limit value in the initial nucleation step of the tungsten film, the condition in the chamber 101 is changed. The HF concentration in the chamber 101 can be kept constant within a critical value.

That is, when the amount of HF in the chamber 101 is detected by the detector 140 and the HF amount exceeds the upper threshold value, the data is fed back to the first reaction gas supply unit 161 for supplying the first reaction gas, WF ₆ , into the chamber. (feed back) to induce a low amount of the first reaction gas to reduce the amount of HF produced in the chamber (101).

In addition, when the amount of HF in the chamber 101 is detected by the detector 140 and the HF amount is less than or equal to the lower threshold, the first reaction gas supply unit 161 for supplying the first reaction gas, WF _6, into the chamber 101. Feedback to the data to induce the amount of the first reaction gas to increase to increase the amount of HF produced in the chamber 101.

When the amount of the reaction by-product is less than or equal to the lower threshold, it means that the amount of the first reaction gas is small, so that the nucleation process that greatly affects the via hole filling of the tungsten film is not performed. It must be maintained.

According to the embodiment, the amount of the reaction by-product is measured in real time to control the amount of the first reaction gas so that the amount of the reaction by-product can be maintained within a critical value range. The via hole filling property may be improved.

3 is a cross-sectional view illustrating a semiconductor device manufactured according to an embodiment.

As shown in FIG. 3, an interlayer insulating layer 182 is formed on the lower structure of the wafer 110 including the lower interconnection 180, and a via hole h is formed in the interlayer insulating layer 182.

A portion of the lower interconnection 180 is exposed by the via hole h formed in the interlayer insulating layer 182.

A barrier layer 183 including at least one of the TiN layer 183a and the Ti layer 183b is formed on the interlayer insulating layer 182 including the via hole h.

A tungsten film is formed on the interlayer insulating film 182 on which the barrier film 183 is formed by using an atom layer deposition (ALD) method.

In the step of forming the tungsten film, the wafer 110 is disposed in the chamber 101, and the first reaction gas containing tungsten and SiH ₄ , H ₂ , which is the second reaction gas, are supplied into the chamber to provide the interlayer. Nuclei are generated on the insulating film 182.

In this case, in the process system 100 according to the embodiment, the amount of reaction by-products generated during deposition of the tungsten film is measured in real time and fed back to control the supply amount of the tungsten gas so that nucleation can be smoothly performed.

Thereafter, a purge step of removing by-products generated in the nucleation step is performed.

Next, the first reaction gas WF ₆ and the second reaction gas H ₂ are supplied into the chamber 101 to grow a nucleus formed on the interlayer insulating layer 182 to form a tungsten atomic layer.

As described above, the deposition process of the tungsten film 185 may be repeatedly formed in atomic layer units to form a tungsten film 185 having a desired thickness.

Thereafter, the tungsten film 185 may be planarized by a chemical mechanical polishing process to form a contact electrode embedded only in the via hole h.

When the tungsten film 185 is formed in the above manner, a tungsten contact electrode having good buried characteristics in the via hole h may be obtained.

According to an embodiment, the amount of by-products in the chamber 101 may be automatically detected in the deposition chamber 101 used in the semiconductor device manufacturing process to prevent defects caused by the reaction by-products penetrating into the barrier film 183. Also, it is possible to prevent the occurrence of via hole filling and improve the yield.

In addition, the embodiment of the present invention is to prevent the excessive amount of reaction by-products by stably controlling the amount of reaction by-products in the chamber 101 in the nucleation step having a great influence on the via hole (h) filling in the deposition chamber 101. The reliability of the system can be improved, and the system can be controlled automatically so that the process can be controlled in real time and the accuracy of the process can be improved.

Although described above with reference to the embodiments, which are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains are not exemplified above without departing from the essential characteristics of the present invention. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a block diagram showing a process system according to an embodiment.

2 is a graph showing the operation of a process system according to an embodiment.

3 is a cross-sectional view illustrating a semiconductor device manufactured according to an embodiment.

Claims (10)

chamber; A first reactive gas supply unit supplying a first reactive gas to the chamber; A second reactive gas supply unit supplying a second reactive gas to the chamber; A detector detecting a concentration of a reaction by-product of the first reaction gas and the second reaction gas; And And a control unit controlling at least one of the first and second reaction gas supply units according to the concentration of the reaction byproduct provided by the detection unit. The method of claim 1, Wherein said first reactant gas is WF ₆ . The method of claim 1, The second reaction gas is SiH ₄ and H ₂ A process system comprising at least one of. The method of claim 1, Wherein said reaction by-product is HF. The method of claim 1, The detection unit comprises at least one residual gas analyzer (RGA). The method of claim 1, The control unit may reduce the amount of the first reaction gas when the amount of the reaction by-product provided is greater than or equal to a critical upper limit value, and control one of the first and second reaction gas supply units when the amount of the reaction by-product is less than or equal to a critical lower limit value. Process system. Disposing a wafer having an insulating film having via holes in the chamber; SiH ₄ and H ₂ and a first reaction gas containing tungsten in the chamber Supplying a second reaction gas comprising at least one of; The first reaction gas reacts with the first reaction gas to generate tungsten nuclei on the insulating layer, and detects concentrations of reaction by-products of the first and second reaction gases to adjust the supply amount of the first reaction gas. step; Removing the reaction byproducts; And And forming a tungsten layer by growing a nucleus formed on the insulating film. The method of claim 7, wherein In the step of adjusting the supply amount of the first reaction gas, And when the concentration of the reaction by-product is higher than a critical upper limit, the flow rate of the first reaction gas is reduced. The method of claim 7, wherein In the step of adjusting the supply amount of the first reaction gas, If the concentration of the reaction by-product is lower than the lower critical value, the flow rate of the first reaction gas to increase the flow of the manufacturing method of the semiconductor device using a process system. The method of claim 7, wherein A barrier film including a TiN film is deposited on the insulating film having the via hole.

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