KR20090036636A - Structure for diagnosis system of reaction process - Google Patents

Abstract

A structure for diagnosis system of reaction process is provided to easily control the incident window of the analytical laboratory and temperature of the emergent window according to the temperature of by-product. The by-product is stored in the analytical laboratory(4130). The incident window(4131) and emergent window(4122) are installed at the analytical laboratory. The light ray is delivered to the analytical laboratory through the incident window and emergent window. The first gas receiver(4110) is formed in the outer side surface of the analytical laboratory. The first gas receiver is connected with the second gas receiver. The receiving part incident window(4111) is installed at the first gas receiver. The light ray is delivered to the first gas receiver through the receiving part incident window. The receiving part emergent window is installed at the second gas receiver.

Description

Reaction Process Diagnostic Structure {STRUCTURE FOR DIAGNOSIS SYSTEM OF REACTION PROCESS}

The present invention relates to a reaction process diagnostic structure used in a reaction process diagnosis system for controlling the process by analyzing the components of the various chemical substances contained in the by-products discharged from the reactor in the reaction process using a variety of chemicals .

The reaction process diagnosis structure used in the conventional reaction process diagnosis system for semiconductor manufacturing includes an analysis chamber for introducing and receiving a by-product discharged through a discharge pipe from a reaction, and an incident for allowing infrared light emitted from an external light emitting unit to enter the analysis chamber. There was a window and an exit window for allowing infrared rays incident on the analysis chamber to be emitted to the outside.

However, the prior art has a disadvantage in that it is difficult to control the temperature of the entrance window and the exit window provided in the analysis chamber in accordance with the temperature of the by-product to be introduced into the analysis chamber.

The present invention is to provide a reaction process diagnostic structure that is easy to adjust the temperature of the entrance window and the exit window provided in the analysis chamber in accordance with the temperature of the by-product to be introduced into the analysis chamber.

The present invention provides an analysis chamber that can accommodate reaction by-products, an entrance window and an exit window provided in the analysis chamber so that infrared rays enter and exit, and the incident window is installed so that the injected gas can contact the outer surface of the entrance window when gas is injected. A first gas containing portion is formed on the outer surface of the analysis chamber and includes a portion in which the exit window is installed to allow the injected gas to contact the outer surface of the exit window when the gas is injected. It relates to a reaction process diagnostic structure comprising a second gas receiving portion formed in the.

In the present invention, the first gas accommodating portion and the second gas accommodating portion may communicate with each other.

According to an embodiment of the present invention, an accommodation part incidence window provided in the first gas accommodating part is provided such that infrared light emitted from the outside of the first gas accommodating part is allowed to enter through the incident window, and the infrared light emitted through the emission window is the second gas. It may also include an accommodating part exit window provided in the second gas accommodating part so as to be able to emit to the outside of the accommodating part.

In the present invention, the first gas receiving portion and the second gas receiving portion communicate with each other through a lower end thereof so as to form a recessed portion, and the analysis chamber may be installed to be detachable to the recessed portion.

The present invention also includes a gas discharge valve connected to the first gas receiving part and the second gas receiving part, and a pump connected to the first gas receiving part and the second gas receiving part via the gas discharge valve. .

The present invention also includes a gas supply unit for supplying gas into the first gas receiving unit and the second gas receiving unit, and a temperature control unit for adjusting the gas temperature accommodated in the gas supply unit.

The present invention may also include a cleaning gas supply unit for supplying a cleaning gas in a radical state to the analysis chamber.

The present invention also includes a remote plasma generation unit for exciting reaction byproducts injected into the analysis chamber.

In the present invention, the volume of any one or both of the first gas receiver or the second gas receiver may be adjustable.

In the present invention, at least one of the first gas accommodating part or the second gas accommodating part may be provided with a length adjusting part capable of adjusting the length.

The present invention has an advantage of easily adjusting the temperature of the entrance window and the exit window provided in the analysis chamber in accordance with the temperature of the by-product to be introduced into the analysis chamber by supplying gas to the first gas receiving unit and the second gas receiving unit.

According to the present invention, since the analysis chamber is installed to be detachable between the first gas accommodating part and the second gas accommodating part, there is an advantage that only the analysis room can be easily replaced when the analysis room is contaminated.

The present invention has an advantage that the infrared gas collected in the light receiving unit includes only the information on the by-products by including a pump for discharging the gas in the first gas receiving part and the second gas receiving part.

The present invention has the advantage of decomposing by-products adsorbed or deposited in the analysis chamber by introducing the cleaning gas in the radical state from the cleaning gas supply unit.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram of a reaction process diagnostic system for manufacturing a semiconductor including Example 1, FIG. 2 is a schematic diagram of the component analysis unit of FIG. 1, FIG. 3 is a schematic left side view of the main part of FIG. A schematic right side view of the main part of the FIG.

Referring to FIG. 1, a reaction process diagnostic system for manufacturing a semiconductor according to the present invention includes a reaction furnace 1000 into which a reaction gas containing various chemical substances is injected into a semiconductor manufacturing process, and by-products generated from the reaction furnace 1000. The discharge pipe 20 and the pump 3000 to discharge the outside, and is installed in the discharge pipe (2000) is composed of a component analyzer 4000 for analyzing and displaying the components of the various chemical substances contained in the by-product.

Accordingly, in the process of inducing a deposition or etching reaction by injecting a reaction gas containing a chemical material, such as chemical vapor deposition, atomic layer deposition, dry etching in the semiconductor manufacturing process to the reactor 1000, With a component analyzer 4000 capable of analysis and display, the operator can monitor the components of the by-products discharged after the reaction in the reactor 1000 in real time, so that the progress of the reaction can be grasped and appropriately dealt with. do.

That is, when a certain chemical is excessively detected among the components of the by-product, the operator may lower the content by manipulating a bubbler (not shown) for injecting process gas into the reactor 1000, or vice versa. Even when a component that should not be detected is detected, the bubbler can be manipulated to effectively induce a smooth reaction.

Referring to FIG. 2, the component analyzer 4000 includes a reaction process diagnosis structure 4100, a light emitting unit 4200 for emitting infrared light, a light receiving unit 4300 for receiving infrared light, and a computing unit 4400.

Referring to FIG. 2, Example 1 includes a first gas receiver 4110, a second gas receiver 4120, and an analysis chamber 4130.

Referring to FIG. 2, the by-product discharged through the discharge pipe 2000 is introduced into the analysis chamber 4130. Therefore, the byproduct inlet valve 4141 for adjusting the byproduct flowing from the discharge pipe 2000 may be connected to the analysis chamber 4130. On the other hand, the by-product outlet valve (4142) may be connected to discharge the by-product after the component analysis to the outside through the discharge pipe (2000) from the analysis room. In addition, a pump 4140 may be disposed between the by-product outlet valve 4422 and the analysis chamber 4130.

Referring to FIG. 2, a remote plasma generating unit 4143 may be connected to the analysis chamber 4130 to excite a byproduct flowing into the analysis chamber 4130 from the discharge pipe 2000. The remote plasma generating unit 4143 may be a tube connecting the discharge pipe 2000 and the byproduct inlet valve 4141, and a microwave generator applying energy to excite the byproduct passing through the tube.

On the other hand, the thickness of the tube connecting the tube, the discharge tube 2000 and the analysis chamber 4130 of the remote plasma generating unit (4143) can be adjusted according to the size of the discharge tube (2000).

2, an incident window 4131 and an exit window 4132 are installed on sidewalls of the analysis chamber 4130. The incident window 4131 is a window through which infrared rays are incident on the analysis chamber 4130, and the exit window 4132 is a window through which infrared rays are emitted from the analysis chamber 4130. Therefore, the incident window 4131 and the exit window 4132 may be selectively installed according to the infrared path. The size, type, and thickness of the entrance window 4131 and the exit window 4132 may be adjusted to suit the purpose.

Referring to FIG. 2, the first gas accommodating part 4110 includes a portion where an incident window 4131 is installed and is formed on an outer surface of the analysis chamber 4130, and the second gas accommodating part 4120 is an exit window 4132. The installed portion is formed on the outer surface of the analysis chamber 4130. That is, when the gas is injected into the first gas receiver 4110, the first gas receiver 4110 is formed on the outer side of the analysis chamber 4130 such that the injected gas may contact the outer side of the incident window 4131. The second gas accommodating part 4120 is formed on the outer side of the analysis chamber 4130 such that when the gas is injected into the second gas accommodating part 4120, the injected gas may come into contact with the outer side of the exit window 4132. do. Meanwhile, the first gas accommodating part 4110 and the second gas accommodating part 4120 communicate with each other.

Referring to FIG. 2, the first gas receiver 4110 and the second gas receiver 4120 are communicated with each other through the lower end thereof so as to form a recess. The analysis chamber 4130 is mounted on the recess. Although not shown in the drawing, the analysis chamber 4130 is installed to be detachable from the recess.

Referring to FIG. 2, an accommodating part entrance window 4111 is installed on a sidewall of the first gas accommodating part 4110, and an accommodating part exit window 4122 is installed on a sidewall of the second gas accommodating part 4120. The accommodation part entrance window 4111 is a window for allowing infrared light emitted from the light emitting part 4200 installed outside the first gas accommodation part 4110 to be incident on the first gas reception part 4110, and exit the accommodation part. The window 4122 is a window for allowing infrared rays incident on the second gas accommodating part through the emission window 4132 to be emitted to the outside of the second gas accommodating part 4120.

3 and 4, the accommodation part entrance window 4111 is formed larger than the entrance window 4131, and the accommodation part exit window 4122 is formed larger than the exit window 4132. In addition, referring to FIG. 2, the light emitting part 4200, the accommodation part entrance window 4111, the entrance window 4131, the exit window 4132, the accommodation part exit window 4122, and the light receiver 4300 are arranged in a straight line. Can be installed. The light emitter 4200 is an apparatus for generating infrared rays incident to the analysis chamber 4130, and the light receiver 4300 is an apparatus for collecting infrared rays passing through the analysis chamber 4130. The relative positions of the light emitting part 4200, the receiving part entrance window 4111, the entrance window 4131, the exit window 4132, the receiving part exit window 4122, and the light receiving part 4300 are relatively determined according to the path of infrared rays. do.

2, a length adjusting part 4113 is formed in the first gas receiving part 4110 to adjust the length of the first gas receiving part 4110, and a second gas is provided in the second gas receiving part 4120. The length adjusting part 4123 is formed to adjust the length of the receiving part 4120. The length adjusters 4113 and 4123 are used to adjust the volumes of the first gas receiver 4110 and the second gas receiver 4120. The length adjusters 4113 and 4123 may adjust the volume of the first gas receiver 4110 and the second gas receiver 4120 by other methods such as forming a crease or a sliding part (not shown). It is to let.

Referring to FIG. 2, a gas supply part 4150 for supplying gas into the first gas receiving part 4110 and the second gas receiving part 4120 may be connected to the first gas receiving part 4110. In addition, the gas supply unit 4150 may be provided with a gas inlet valve (4151) for adjusting the amount of gas supplied into the first gas receiving unit 4110 and the second gas receiving unit 4120. In addition, the gas supply unit 4150 may be provided with a temperature control unit 4154 for adjusting the temperature of the gas supplied into the first gas receiving unit 4110 and the second gas receiving unit 4120. The temperature controller 4154 may be a heater that heats the gas contained in the temperature caster 4154.

Referring to FIG. 2, a gas discharge valve 4422 may be connected to the second gas receiver 4120 to discharge the gas supplied into the first gas receiver 4110 and the second gas receiver 4120. The pump 4160 may be connected to the gas discharge valve 4422. The pump 4160 supplies a gas supplied from the gas supply part 4150 into the first gas receiving part 4110 and the second gas receiving part 4120 to the desired temperature of the entrance window 4131 and the exit window 4132. After the change, the gas is discharged to the outside so that the first gas accommodating part 4110 and the second gas accommodating part 4120 may be vacuumed.

2, a cleaning gas supply unit 4180 for supplying a cleaning gas in a radical state may be connected to the analysis chamber 4130. In addition, the cleaning gas supply unit 4180 may be provided with a cleaning gas inlet valve 4141 for selectively communicating and blocking the cleaning gas supply unit 4180 and the analysis chamber 4130.

2, a pump 4190 may be connected to the analysis chamber 4130. The pump 4190 cleans the inner wall of the analysis chamber 4130, the entrance window 4131, and the exit window 4132 after the radical cleaning gas supplied from the cleaning gas supply unit 4180 into the analysis chamber 4130. By discharging to the outside, the cleaning gas does not remain in the analysis chamber 4130.

Referring to FIG. 2, the pump 4190 may be connected to a cleaning gas outlet valve 4192 for opening or blocking a gas flowing into the pump 4190 from the analysis chamber 4130.

Meanwhile, referring to FIG. 2, the operation unit 4400 is connected to the light receiver 4300. The calculation unit 4400 is a device that analyzes the components of the chemicals included in the by-product by processing the data detected by the light receiving unit 4300.

The operation of the first embodiment described above will be described below.

Referring to FIG. 2, the temperatures of the entrance window 4131 and the exit window 4122 provided in the analysis chamber 4130 are preferably the same as the temperature of the by-products flowing into the analysis chamber 4130. Therefore, when the temperature of the entrance window 4131 and the exit window 4132 is to be changed, the gas temperature of the gas supply unit 4150 through the temperature control unit 4154 is made equal to the temperature of the incoming by-products and then the gas. When the inlet valve 4151 is opened to flow into the first gas receiver 4110 and the second gas receiver 4120, the temperatures of the entrance window 4131 and the exit window 4132 are by-products to be introduced into the analysis chamber 4130. It becomes equal to the temperature of.

Referring to FIG. 2, when a predetermined time elapses since gas is introduced into the first gas accommodating part 4110 and the second gas accommodating part 4120, it is determined that the temperature of the incident window 4131 and the exit window 4132 is sufficiently changed. By opening the gas discharge valve 4422 and operating the pump 4160, the gas in the first gas accommodating part 4110 and the second gas accommodating part 4120 is discharged to the outside to thereby release the first gas accommodating part 4110 and The inside of the second gas receiver 4120 may be made in a vacuum state. This is because the spectroscopic analysis using infrared rays is for the purpose of analyzing the information on the by-products in the analysis chamber 4130, so that the infrared rays do not include the information on the gas in the gas accommodating parts 4110 and 4120.

Referring to FIG. 2, when the interior of the first gas receiver 4110 and the second gas receiver 4120 is in a vacuum state, the by-product discharged through the discharge pipe 2000 is opened by opening the by-product inlet valve 4141. ) To be introduced inside.

Referring to FIG. 2, when a by-product flows into the analysis chamber 4130, the infrared light is emitted through the light emitting unit 4200, and the infrared light is incident into the analysis chamber 4130 through the entrance part 4111 and the entrance window 4131. After colliding with the light emitting unit 4300, the light receiving unit 4300 is collected through the exit window 4132 and the accommodation unit exit window 4122.

Referring to FIG. 2, the operation unit 4400 connected to the light receiving unit 4300 calculates the components of the by-product by processing the data detected by the light receiving unit 4300.

Referring to FIG. 2, in Example 1, the analysis chamber 4130 is detachably installed between the first gas receiving unit 4110 and the second gas receiving unit 4120, so that the analysis chamber 4130 is contaminated. There is an advantage that can be easily replaced only (4130).

2, when the by-products are adsorbed or deposited in the analysis chamber 4130, the cleaning gas inlet valve 4141 is opened to decompose the adsorbed or deposited by-products by introducing a cleaning gas in a radical state from the cleaning gas supply unit 4180. can do.

In the first embodiment, the light emitting unit 4200 and the light receiving unit 4300 are provided outside the first gas receiving unit 4110 and the second gas receiving unit 4120, but in another exemplary embodiment, the light emitting unit 4200. The light receiver 4300 may be provided inside the first gas receiver 4110 and the second gas receiver 4120. In this case, the accommodation part entrance window 4131 and the accommodation part exit window 4122 are not provided.

In Example 1, the analysis chamber 4130 is connected to the discharge pipe 2000. However, in another embodiment, the analysis chamber 4130 is not connected to the discharge pipe 2000 and samples the by-product gas from the discharge pipe 2000, thereby analyzing the analysis chamber 4130. ) Can be introduced.

In the case of Example 1, but using infrared, raman, UV, laser and the like can be used in addition to infrared.

5 is a schematic view of a modified embodiment of the first embodiment.

Referring to FIG. 5, in the case of the above-described modified embodiment, the analysis chamber 413 may be installed between the discharge pipe 2000 and the discharge pipe 2000.

Referring to FIG. 2, the by-product discharged through the discharge pipe 2000 is introduced into the analysis chamber 4130. Therefore, a by-product inlet valve 4141 may be connected to the analysis chamber 4130 to adjust the by-product flowing from the discharge pipe 2000. On the other hand, the by-product outlet valve 4422 may be connected to discharge the by-product after the component analysis to the outside through the discharge pipe (2000) from the analysis room. In addition, a pump 4170 may be disposed between the by-product outlet valve 4422 and the discharge pipe 2000. That is, in the modified embodiment of the first embodiment, unlike the first embodiment, the analysis chamber 4130 is installed between the discharge pipe 2000 and the discharge pipe 200 instead of the pipe branched from the discharge pipe 2000. Thus, by-product outlet valve 4142 and pump 4140 of FIG. 2 are replaced with by-product outlet valve 4422 and pump 4170 of FIG. 5. Other points are similar to those of Example 1 The same description is omitted.

6 shows a schematic view of the main part of Example 2. FIG.

Referring to FIG. 6, the second embodiment is the same as the first embodiment in the analysis chamber 4130a, the entrance window 4131a, the exit window 4132a, the first gas receiving part 4110a, the receiving part entrance window 4111a, and the second. And a gas receiving part 4120a and a receiving part exit window 4202a.

Referring to FIG. 6, unlike the first embodiment, the first gas receiver 4110a and the second gas receiver 4120a do not communicate with each other. Therefore, although not shown in the drawing, it is preferable to supply the gas having the same temperature flowing out from one gas supply part to the first gas receiving part 4110a and the second gas receiving part 4120a, respectively. On the other hand, it is preferable that a separate pump (not shown) for discharging gas is connected to the first gas accommodating part 4110a and the second gas accommodating part 4120a, respectively.

1 is a block diagram of a reaction process diagnostic system for manufacturing a semiconductor including Example 1. FIG.

Figure 2 is a schematic diagram of the component analysis unit of Figure 1;

Figure 3 is a schematic left side view of the main part of Figure 2;

Figure 4 is a schematic right side view of the main part of Figure 2;

5 is a schematic view of a modified embodiment of the first embodiment;

Fig. 6 is a schematic diagram of an essential part of Embodiment 2;

<Description of the symbols for the main parts of the drawings>

1000: reactor 2000: discharge pipe

3000: pump 4000: component analysis unit

4100: reaction process diagnostic structure

4110: first gas accommodation portion 4111: accommodation portion entrance window

4113: length adjustment

4120: second gas receiving unit 4122: receiving unit exit window

4123: length adjustment

4130: Analysis room 4131: Admission window

4132: exit window

4140: pump 4141: by-product inlet valve

4142: by-product outlet valve 4143: remote plasma generation unit

4145: by-product inlet pump

4150: gas supply part 4151: gas inlet valve

4154: temperature controller

4160: pump 4162: gas discharge valve

4170: pump 4172: by-product outlet valve

4180: cleaning gas supply unit 4181: cleaning gas inlet valve

4190: pump 4192: cleaning gas outlet valve

4200: light emitting unit 4300: light receiving unit

4400: calculation

4110a: first gas receiving portion 4111a: receiving portion entrance window

4120a: 2nd gas receiving part 4222a: receiving part exit window

4130a: Analysis room 4131a: Admission window

4132a: Exit Window

Claims (10)

An analysis chamber 4130 in which reaction by-products are accommodated; An entrance window 4131 and an exit window 4122 provided in the analysis room 4130 to allow light to enter and exit, When a gas is injected, the first gas accommodating part is formed on the outer surface of the analysis chamber 4130 and includes a portion where the incident window 4131 is installed so that the injected gas may contact the outer surface of the incident window 4131. (4110), When gas is injected, the second gas accommodating part is formed on the outer surface of the analysis chamber 4130 and includes a portion where the emission window 4122 is installed so that the injected gas may contact the outer surface of the emission window 4122. Reaction process diagnostic structure, characterized in that it comprises (4120). The method of claim 1, Reaction process diagnostic structure, characterized in that the first gas receiving portion (4110) and the second gas receiving portion (4120) are in communication with each other. The method of claim 2, A receiving part incident window 4111 provided in the first gas receiving part 4110 so that light emitted from the outside of the first gas receiving part 4110 may be incident through the incident window 4131; It includes a receiving portion exit window 4122 provided in the second gas receiving portion 4120 so that the light emitted through the exit window 4132 can be emitted to the outside of the second gas receiving portion 4120. Reaction process diagnostic structure. The method according to claim 2 or 3, The first gas receiving portion 4110 and the second gas receiving portion 4120 are communicated with each other through the lower end so that the recessed portion is formed, Reaction process diagnostic structure, characterized in that the analysis chamber (4130) is installed to be detachable to the recess. The method according to claim 2 or 3, A gas discharge valve 4422 connected to the first gas receiver 4110 and the second gas receiver 4120; And a pump (4160) connected to the first gas receiver (4110) and the second gas receiver (4120) via the gas discharge valve (4162). The method according to claim 2 or 3, A gas supply part 4150 for supplying gas into the first gas accommodating part 4110 and the second gas accommodating part 4120; Reaction process diagnostic structure, characterized in that provided with a temperature control unit (4154) for adjusting the gas temperature accommodated in the gas supply unit (4150). The method according to claim 2 or 3, Reaction process diagnostic structure, characterized in that it comprises a cleaning gas supply unit (4180) for supplying the cleaning gas in the radical state to the analysis chamber (4130). The method according to claim 2 or 3, And a remote plasma generating unit (4143) for exciting the reaction byproducts injected into the analysis chamber (4130). The method according to claim 2 or 3, Reactive process diagnostic structure, characterized in that the volume of any one or both of the first gas receiving portion (4110) or the second gas receiving portion (4120) is adjustable. The method of claim 9, Reaction process diagnostic structure, characterized in that at least one of the first gas receiving portion (4110) or the second gas receiving portion (4120) is formed a length adjusting portion capable of adjusting the length.

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