KR20090030373A

KR20090030373A - Apparatus for dispensing a chemical

Info

Publication number: KR20090030373A
Application number: KR1020070095623A
Authority: KR
Inventors: 이광렬
Original assignee: 세메스 주식회사
Priority date: 2007-09-20
Filing date: 2007-09-20
Publication date: 2009-03-25

Abstract

The chemical injection device includes an injection unit and a control unit. The injection unit sprays the chemical by a scan method that reciprocates the chemical along a predetermined section at the center of the rotating wafer. The control unit is electrically connected to the spraying unit, receives the process conditions for the scanning method performed by the spraying unit from the outside, and adjusts the scanning speed of the spraying unit so that the position at which the spraying operation is completed coincides with any one of both points of a predetermined section. To control. Therefore, the same amount of chemical can be injected according to the position of the wafer.

Description

Chemical spraying device {APPARATUS FOR DISPENSING A CHEMICAL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical ejection apparatus, and more particularly, to an apparatus for injecting chemical into the wafer for cleaning a wafer used in the manufacture of a semiconductor device.

Generally, semiconductor devices are manufactured from wafers based on silicon. Specifically, the semiconductor device is manufactured including a deposition process, a photolithography process, an etching process, an ion implantation process, a cleaning process, an inspection process, and the like.

In the above-described cleaning process, a cleaning method may be used in which the wafer is accommodated in a storage container and then various kinds of chemicals are sprayed onto the wafer.

In this case, in order to uniformly disperse the chemical on the wafer, the wafer is rotated by itself with a rotary chuck coupled to the center, and an injection unit for injecting the chemical is a predetermined section according to a scanning method at a central position of the wafer. Spray while reciprocating.

In this case, various setting values are input to the injection unit to control the scan operation. The setting value may include, for example, a scan position, a scan acceleration, a scan constant velocity, a scan deceleration, a scan time, a scan time, and the like.

However, since so many of the setting values are calculated and input by a user who may be partially inaccurate, there is a problem that spraying according to the scanning method of the spraying part may not be uniformly performed at the position of the wafer in some cases. Have

Accordingly, the present invention has been made in view of such a problem, and an object of the present invention is to provide a chemical spraying device capable of uniformly dispersing chemicals on a wafer through scan spraying of the spraying portion.

In order to achieve the above object of the present invention, the chemical injection device according to one feature includes an injection unit and a control unit. The jetting unit ejects the chemical by a scan method that reciprocates the chemical along a predetermined section at the center of the rotating wafer. The control unit is electrically connected to the spraying unit and receives a process condition for a scan method performed by the spraying unit from the outside so that the position where the operation of the spraying unit is finished coincides with any one of both points of the predetermined section. Control the scan speed of the injection unit.

Here, the process condition for the scan method includes a scan interval, a scan time and a scan number. Thus, the scan section, the scan time and the number of scans may be input as shorter or shorter as the diameter of the wafer is smaller and the rotational speed of the wafer is faster.

According to such a chemical injection device, when a user inputs process conditions such as a scan section, a scan time, and a scan number of the jet to the controller, the controller determines a position where the scan of the jet is finished at both points of the scan section. By controlling the scan speed of the jet to match any one of the above, the jet may allow the chemical to be uniformly distributed on the wafer.

Hereinafter, with reference to the accompanying drawings will be described in detail a chemical injection device according to an embodiment of the present invention. As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the drawings, similar reference numerals are used for similar elements. In the accompanying drawings, the dimensions of the structures are shown in an enlarged scale than actual for clarity of the invention.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described on the specification, and one or more other It should be understood that it does not exclude in advance the possibility of the presence or addition of features or numbers, steps, actions, components, parts or combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art. Terms such as those defined in the commonly used dictionaries should be construed as having meanings consistent with the meanings in the context of the related art and shall not be construed in ideal or excessively formal meanings unless expressly defined in this application. Do not.

1 is a schematic configuration diagram showing a chemical injection device according to an embodiment of the present invention, Figure 2 is a block diagram schematically showing the control of the injection unit by the control unit of the chemical injection device shown in FIG.

1 and 2, the chemical injection device 100 according to an embodiment of the present invention includes an injection unit 110 and a control unit 120.

The injection unit 110 injects the chemical 20 to the wafer 10 to clean the wafer 10 for manufacturing the semi-small element. The chemical 20 may include, for example, sulfuric acid (H 2 SO 4), hydrochloric acid (HCl), hydrofluoric acid (HF), hydrogen peroxide solution (H 2 O 2), deionized water (H 2 O), and the like.

Specifically, the injection unit 110 injects the chemical 20 at a constant injection speed from one injection nozzle having a constant injection angle. Here, the constant injection speed may be the fastest speed under the condition that the chemical 20 does not splash on the wafer 10. On the other hand, the injection unit 110, unlike the injection nozzle, may include an injection hole formed in one position. In contrast, the injection unit 110 may include two or more injection nozzles or injection holes if the diameter of the wafer 10 is very wide.

Here, the wafer 10 is rotated to spread the chemical 20 injected from the injection unit 110 widely. To this end, the wafer 10 may be coupled to a rotation chuck providing a rotational force (C) in the center.

The injection unit 110 injects the chemical 20 into the wafer 10 while scanning a predetermined distance based on the center C of the wafer 10. That is, the injection unit 110 injects the chemical 20 to the wafer 10 while moving along the scan section SS including the center C of the wafer 10. Here, the scan section SS is set by designating two first and second points P1 and P2 facing each other based on the center C of the wafer 10.

The scan section SS is set according to the diameter of the wafer 10 and the rotation speed of the wafer 10. The scan section SS may be shorter as the diameter of the wafer 10 is smaller and the rotational speed of the wafer 10 is faster. Specifically, since the rotational speed of the wafer 10 is typically designated, the scan section SS is actually set differently according to the diameter of the wafer 10.

The scan section SS may be set by a distance of about 60% to about 70% of the diameter of the wafer 10. For example, the scan section SS may be set to about 120 mm to about 140 mm when the diameter of the wafer 10 is about 200 mm. That is, the first and second points P1 and P2 may be designated at positions spaced apart from the center C of the wafer 10 by about 60 mm to about 70 mm.

As a result, the injection unit 110 injects the chemicals 20 sprayed onto the wafers 10 by rotating the chemicals 20 along the scan section SS, thereby injecting the chemicals 20 injected into the wafers 10 into the wafers. It can be distributed to all positions of (10). That is, the wafer 10 may be cleaned as a whole through the chemical 20.

In this case, the chemicals 20 sprayed from the injection unit 110 may be continuously applied to differently perform cleaning of the wafer 10 more efficiently. For example, the injection unit 110 may first spray a strong acid such as sulfuric acid (H 2 SO 4) and hydrochloric acid (HCl), and then spray deionized water (H 2 O) on the wafer 10 to wash the strong acid. . In contrast, the injection unit 110 may proceed the process of etching the wafer 10 if the etching solution is used as the chemical 20.

The controller 120 substantially controls the speed V at which the injection unit 110 scans in the scan section SS. In this case, the number N of scans of the injection unit 110 in the scan period SS is first input to the controller 120.

The number of scans N is substantially a value that allows the entire cleaning or etching of the wafer 10 to proceed smoothly, which is substantially the rotational speed of the wafer 10 and the wafer 10. It depends on the diameter. Specifically, the rotational speed of the wafer 10 is, as mentioned above, typically defined, and thus substantially depends on the diameter of the wafer 10. For example, when the diameter of the wafer 10 is about 200 mm, the number of scans may be about 3 to about 10 times.

The controller 120 controls the first and second points P1 and P2 and the minute by which the user determines the scan section SS to control the speed V scanned by the injection unit 110. The master 110 further receives a time T for scanning.

In this way, the control unit 120 allows the injection unit 110 to advance the scan section SS during the time T by the number of scans N previously set (scan speed of the injection unit 110). V) is calculated automatically.

In this case, the controller 120 calculates the scan speed V such that the end position of the injection unit 110 coincides with any one of the first and second points P1 and P2. This is for the injection unit 110 to spray the chemical 20 uniformly as much as the number of scans N in the scan section SS.

As such, the number of scans N in the processing conditions is performed by the user to the control unit 120 which is first input according to the diameter of the wafer 10 and the rotational speed of the wafer 10. When the first and second points P1 and P2 for setting the scan section SS and the time T to be scanned of the injection unit 110 are further input, the control unit 120 makes the injection unit therethrough. By controlling the scan speed V of the injection unit 110 such that the position where the scan of the 110 is finished coincides with any one of the first and second points P1 and P2, the injection unit 110 This allows the chemical 20 to be uniformly distributed according to the position of the wafer 10.

Meanwhile, the wafer 10 may be accommodated in a separate accommodating part 30. This is to accommodate the chemical 20 flowing to the edge of the wafer 10 while the chemical 20 is injected from the injection unit 110 to the wafer 10.

The accommodating part 30 may accommodate the chemical 20 that can be removed on the wafer 10 while the ejection part 110 injects the chemical 20 onto the wafer 10. It may have a size wider than that of the wafer 10.

In addition, the accommodating part 30 may be combined with the center C of the wafer 10 so that the rotary chuck for rotating the wafer 10 may be coupled. At this time, in order to rotate the wafer 10, the receiving portion 30 itself may be rotated.

On the other hand, the lower portion of the receiving portion 30 may be formed with a discharge portion 40 for discharging the chemical 20 accommodated therein. Thus, the chemical 20 discharged from the discharge unit 40 may be recycled after being filtered using a separate filtering device. As a result, manufacturing cost can be reduced.

Although the detailed description of the present invention has been described with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art will have the idea of the present invention described in the claims to be described later. It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

According to the present invention, the number of scans during the process conditions is the first and second points for setting the scan interval by the user in the control unit which is preset according to the diameter of the wafer and the rotation speed of the wafer, and the time to scan the injection unit. By simply inputting and automatically controlling the scan speed of the ejection portion, it can be used to uniformly distribute the chemical on the wafer.

1 is a schematic configuration diagram showing a chemical injection device according to an embodiment of the present invention.

FIG. 2 is a block diagram schematically illustrating control of an injection unit by a control unit of the chemical injection device shown in FIG. 1.

10: wafer 20: chemical

30: accommodating part 40: discharging part

100: chemical injection device 110: injection unit

120: control unit

Claims

An injection unit for injecting the chemical by a scan method reciprocating the chemical along a predetermined section at the center of the rotating wafer; And

The injection unit is electrically connected to the injection unit and receives process conditions for a scanning method performed by the injection unit from the outside, so that the position where the operation of the injection unit is finished coincides with any one of both points of the predetermined section. Chemical injection device comprising a control unit for controlling the scanning speed.

The method of claim 1, wherein the process conditions for the scan method include a scan interval, a scan time, and a scan count.

The scan section, the scan time and the number of scans is a chemical injection device, characterized in that the shorter or less input as the diameter of the wafer is smaller and the rotational speed of the wafer is faster.