KR20090028125A - Method for manufacturing thin film for gap-fill - Google Patents

Method for manufacturing thin film for gap-fill Download PDF

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Publication number
KR20090028125A
KR20090028125A KR1020070093456A KR20070093456A KR20090028125A KR 20090028125 A KR20090028125 A KR 20090028125A KR 1020070093456 A KR1020070093456 A KR 1020070093456A KR 20070093456 A KR20070093456 A KR 20070093456A KR 20090028125 A KR20090028125 A KR 20090028125A
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KR
South Korea
Prior art keywords
gas
etching
thin film
deposition
gap
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KR1020070093456A
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Korean (ko)
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강대봉
이대우
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주성엔지니어링(주)
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Priority to KR1020070093456A priority Critical patent/KR20090028125A/en
Publication of KR20090028125A publication Critical patent/KR20090028125A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Element Separation (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a method for forming a thin film for gap fill, comprising: positioning a semiconductor substrate having a gap formed in a reaction space, generating a plasma in the reaction space, and depositing a thin film using a deposition gas activated by the plasma. Filling the gap by sequentially performing a deposition process and an etching process of etching a portion of the thin film deposited by using the etching gas activated by the plasma, and filling the gap at least once in the plurality of etching processes. It provides a method for forming a thin film for a gap fill comprising the step of providing a control gas together with the gas. As a result, the clipping phenomenon of the upper region of the gap can be suppressed and the uniformity of the gap fill can be improved.

Description

Method for manufacturing thin film for gap-fill

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a thin film for gap fill, and to a method for depositing a thin film for space filling (ie, a gap fill) during a manufacturing process of a semiconductor device. .

The device isolation film used in the conventional semiconductor device serves to electrically separate the devices. For this purpose, a trench is formed in the semiconductor substrate, and the trench is filled with an insulating material layer to fabricate an isolation layer.

In this case, in order to fabricate the trench as an insulating material, a high density plasma chemical vapor deposition (HDP-CVD) process was used. In the conventional HDP-CVD process, deposition and etching occur simultaneously in the process chamber to fill the trench with an insulating material. However, in recent years, the narrower the design rule of the semiconductor device to 60nm or less, the larger the aspect ratio of the trench, the narrower the entrance of the trench. As a result, there is a limit to filling trenches (or gaps) of patterns having ultrafine device line widths with the HDP-CVD process which simultaneously performs deposition and etching.

In addition, when the trench is buried in the HDP-CVD process which simultaneously performs deposition and etching, clipping is performed in which the surface area of the trench is etched more than the thin film is deposited in the trench inlet, that is, the upper edge region of the trench. (Clipping) phenomenon occurs. Clipping is more likely to occur as the etching contribution in the HDP-CVD process increases. Due to such a clipping phenomenon, it is difficult to maintain the uniformity of the insulating film deposited for the gap fill, and it is difficult to secure process margins due to the non-uniform gap fill.

In order to solve the above problems, the present invention proceeds by separating the deposition and etching processes in a single chamber, and during the etching process, Si x H x gas is added to suppress the phenomenon of clipping in the upper region of the gap, and the gap fill Provided is a method for forming a thin film for gap fill, which can improve the uniformity of the film.

Positioning a semiconductor substrate with a gap formed in the reaction space according to the present invention, generating a plasma in the reaction space, and depositing a thin film using a deposition gas activated by the plasma; Filling the gap by sequentially performing a plurality of etching processes to etch a portion of the deposited thin film using the activated etching gas, and providing a control gas together with the etching gas at least one of the plurality of etching processes. It provides a thin film forming method for a gap fill comprising the step.

It is effective that the deposition gas and the control gas contain the same element.

It is preferable that the same element is Si.

The deposition gas may include a gas containing Si and an O 2 gas, the etching gas may include a gas containing an F element, and the control gas may include a gas containing Si.

In the etching process, it is effective that the control gas, the etching gas and the O 2 gas are provided. In this case, it is preferable that the flow rate of the etching gas is 2 to 10 times more than the control gas flow rate, and the flow rate of the O 2 gas is 0.5 to 2 times more than the control gas flow rate.

The etching process in which the control gas is provided is effectively repeated every predetermined number of times among the plurality of etching processes.

In addition, the step of positioning a semiconductor substrate with a gap formed in the reaction space according to the present invention, generating a plasma in the reaction space and a deposition process for depositing a thin film by supplying a deposition gas to the reaction space, and the deposited And filling the gap by sequentially performing an etching process of etching a portion of the thin film a plurality of times, wherein the etching process includes supplying the etching gas and supplying a control gas. To provide.

It is preferable that the deposition gas and the control gas contain the same element.

The deposition gas may include a gas containing Si and an O 2 gas, the etching gas may include a gas containing an F element, and the control gas may include a gas containing Si.

It is effective that the flow rate of the etching gas is 2 to 10 times higher than the control gas flow rate. In the etching process, the O 2 gas is further supplied, and the flow rate of the O 2 gas is 0.5 to 2 times more effective than the control gas flow rate.

A chamber having a reaction space, a substrate placing means on which a substrate is placed, plasma generating means for generating a plasma in the reaction space, and a deposition gas and an etching gas are sequentially provided to the reaction space a plurality of times, and the plurality of etching gases Provided is a thin film forming apparatus for a gap fill comprising a gas supply means for providing a control gas together with the etching gas at least once upon providing.

It is preferable that the said control gas contains the gas containing Si element.

As described above, in the present invention, the deposition process and the etching process are sequentially performed a plurality of times in a single chamber, and at least one etching process adds Si x H x gas to suppress the clipping phenomenon of the upper region of the gap, The uniformity of the peel can be improved.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like numbers refer to like elements in the figures.

1 is a cross-sectional view of a thin film deposition apparatus for a gap fill according to an embodiment of the present invention.

2 is a view for explaining a process flow of the gap fill thin film deposition method according to an embodiment. FIGS. 3 to 6 are views for explaining a gap fill thin film deposition method according to an embodiment.

Referring to FIG. 1, the thin film deposition apparatus for a gap fill according to the present embodiment may sequentially perform a deposition process and an etching process. The thin film deposition apparatus for a gap fill includes a chamber 100 having a reaction space, a substrate placing means 110 provided inside the reaction space, and a substrate 10 disposed thereon, and a gas supply supplying a deposition gas and an etching gas to the reaction space. Means 120 and plasma generating means 130 for generating a plasma in the reaction space. And, it further comprises an exhaust means 140 for exhausting the gas in the chamber 100.

In addition, although not shown, one side of the chamber 100 may be provided with a doorway through which the substrate 10 enters and exits, and may further include temperature adjusting means for adjusting the temperature of the chamber 100 and the substrate 10. have.

Although not shown, the chamber 100 described above includes a chamber body and a chamber lid covering the chamber body. In the chamber body, the substrate placing means 110 and the gas supply means 120 are located. The plasma generating means 130 is provided outside the chamber lid. The chamber lid is preferably manufactured in a dome shape as shown in FIG. It is effective that the antenna 131 for the plasma generating means 130 is located outside the dome-shaped chamber lid.

The above-described substrate placing means 110 to place the substrate 10 is introduced into the chamber 100. In FIG. 1, one substrate 10 is placed in the substrate placing means 110. Without being limited thereto, a plurality of substrates may be placed on the substrate mounting means 110. An electrostatic chuck or a vacuum chuck can be used as the substrate placing means 110. It may further include a driving unit for lifting or rotating the substrate placing means (110). In addition, the substrate placing means 110 further includes a lift pin for assisting in and out of the substrate 10. In addition, a separate means for adjusting the temperature may be provided in the substrate placing means 110.

The gas supply unit 120 described above includes a gas injection unit 121 disposed inside the chamber 100, a first gas supply unit 122 providing a deposition gas to the gas injection unit 121, and a gas injection unit ( And a second gas supply unit 123 for providing an etching gas to the 121. In addition, the gas injection unit 121 may further include a third gas supply unit 124 for providing Si x H x gas (ie, control gas). In this embodiment, the deposition gas and the control gas preferably contain the same element. At this time, it is effective that the element is silicon (Si). And it is possible to use a deposition gas as a control gas.

Here, the gas injection unit 121 extends from the lower region in the chamber 100 to the upper region, and the injection hole is formed in a shape provided in the upper region of the substrate 10. That is, as shown in FIG. 1, the gas injection unit 121 is manufactured to have a substantially '7' shape.

Valves 125, 126, and 127 are respectively provided between the first to third gas supply parts 122, 123, and 124 and the gas injector 121.

In the present embodiment, at least one of deposition gas, etching gas, and Si x H x gas may be provided to the reaction space of the chamber 100 through the gas supply means 120. That is, according to opening and closing of the valves 125, 126, and 127, various kinds of gases may be provided into the chamber 100 through the gas injector 121. In addition, the gas supply unit 120 may sequentially provide the deposition gas and the etching gas to sequentially perform the deposition process and the etching process. The third gas supply unit 124 can be omitted as necessary. That is, when Si x H x gas is used as the deposition gas, it can be omitted.

The above-described plasma generating means 130 includes an antenna 131 provided on the outer surface of the chamber 100, a first power supply unit 132 for providing plasma power to the antenna 131, and a plasma on the substrate placing means 110. A second power supply unit 133 for supplying power is provided.

As such, when the plasma power is supplied to the antenna 131 and the substrate mounting means 110 through the first and second power supply units 131 and 132, plasma is generated in the reaction space inside the chamber 100. When the process gas is provided to the reaction space where the plasma is generated through the gas supply means 120, the process gas is activated (plasmaized) by the plasma.

As described above, the thin film deposition apparatus of the present embodiment alternately performs deposition and etching by using an activated process gas as shown in FIG. 2, and provides a semiconductor substrate by providing Si x H x gas together in at least one etching process. A thin film is deposited that fills a gap (e.g., groove, hole or trench) formed thereon.

As illustrated in FIG. 2, a deposition process is performed in which an insulating film is formed on the entire surface where a gap is formed using a deposition gas. Subsequently, an etching process is performed using an etching gas to remove a portion of the insulating layer. The deposition process and the etching process are repeated a plurality of times. In FIG. 2, six deposition processes and six etching processes are performed during the gap fill insulating film deposition time to prepare the insulating film for gap fill. At this time, it is preferable to exhaust the deposition gas and the etching gas at the end of the deposition process and the etching process. Of course, a separate exhaust process may be provided between the deposition process and the etching process. Then, the deposition equipment of this embodiment performs continuous exhaust using the exhaust means. Thus, no separate evacuation step may be provided. That is, the exhaust process may be performed simultaneously with the deposition process and the etching process.

In addition, the present embodiment provides a Si x H x gas (control gas) together with the etching gas at least once during the etching process. Deposition gas is used as the control gas. As shown in the figure, Si x H x gas was provided together during the second and fifth etching processes. Of course, in this embodiment, the number of the deposition process and the etching process is not limited thereto, and may be more or less than six times. This may vary depending on various factors such as the size of the gap to be buried and the deposition rate of the equipment. The number of deposition processes and the number of etching processes may be different. In addition, in the case of providing the Si x H x gas in the etching process may be variously selected as necessary. That is, it is possible to provide all the etching process when Si x H x with gas, it is also possible to provide a Si x H x gases with every predetermined number of the etching process. In addition, in the initial stage, the deposition process and the etching process of providing Si x H x gas may be alternately performed, and in the second half (after deposition of the insulating film for gap fill of a predetermined thickness), the deposition process and the etching process may be alternately performed.

In addition, FIG. 2 shows that the process time of one deposition process and one etching process are similar. However, the present invention is not limited thereto, and the deposition process may be longer than the etching process. Of course the opposite is also true.

As such, a plurality of deposition processes and etching processes may be sequentially performed using a single device, and at least one of the plurality of etching processes may be etched to provide Si x H x gas together to form a gap having a high aspect ratio as an insulating thin film. It can be embedded and can prevent the occurrence of clipping of the gap upper region.

Hereinafter, a method of filling gaps through an HDP-CVD process using a thin film deposition apparatus according to an exemplary embodiment will be described in detail with reference to the accompanying drawings. Herein, a description will be given of the gap centered on the gap.

As shown in FIG. 3, the semiconductor substrate 10 having the trench 11 formed thereon is prepared.

As shown in FIG. 4, a deposition process is performed to form the first HDP oxide layer 12-1 on the entire structure of the substrate. To this end, first, plasma is generated in the reaction space of the chamber 100 through the plasma generating means 130. Of course, at this time, the temperature and the pressure inside the chamber 100 is adjusted to match the deposition process conditions. Then, the deposition gas is injected through the gas supply means 120 into the reaction space of the chamber 100 in which the plasma is generated. The deposition gas injected in this way is activated by the plasma. The first HDP oxide film 12-1 is formed on the substrate 10 on which the trench 11 is formed by the activated deposition gas. At this time, the first HDP oxide layer 12-1 is deposited on the bottom bottom region of the trench 11. Here, it is preferable to use SiH 4 gas and O 2 gas as the deposition gas provided to the reaction space through the gas supply means 120. Through the deposition process, the first HDP oxide layer 12-1 is deposited to a target thickness.

As shown in FIG. 5, an etching process is performed to remove a portion of the first HDP oxide layer 12-1 on the substrate 10. At this time, as shown in the figure, the first HDP oxide film 12-1 of the upper region of the trench 11 and the upper region of the substrate 10 between the trench 11 and the trench 11 than the inner region of the trench 11 is shown. ) Is more etched.

In order to proceed with the etching process, first, the supply of the deposition gas is cut off in this embodiment. At this time, plasma is continuously generated in the reaction space of the chamber 10. Next, the unreacted gas of the chamber 10 is exhausted. Thereafter, the etching gas is injected into the reaction space of the chamber 10 in which the plasma is generated. The etching gas is activated by the plasma, and a part of the first HDP oxide film 12-1 formed on the substrate 10 is removed by the activated etching gas. In this case, it is preferable to use an F series gas (that is, a gas containing an F element) as an etching gas. In this embodiment, it is effective to use NF 3 gas. Of course, the present invention is not limited thereto, and various kinds of etching gases capable of removing the silicon oxide layer may be used.

In this embodiment, the inside of the trench 11 may be filled with an insulating film for gap fill by repeating the above-described deposition process and etching process. That is, as shown in FIG. 6, the first to third HDP oxide layers 12-1, 12-2, and 12-3 are deposited through three deposition processes, and the first to third through the etching process, respectively. A part of the third HDP oxide films 12-1, 12-2, and 12-3 are removed. Through this, the inside of the trench 11 is filled with the first to third HDP oxide layers 12-1, 12-2, and 12-3. Of course, the present invention is not limited thereto, and the inside of the trench 11 may be buried through a larger number of HDP oxide films.

In the present embodiment, a small amount of Si x H x gas is provided together during the etching process. Si x H x gas provided during the etching process may react with the O 2 gas provided during the etching process to prevent clapping within a range that does not significantly reduce the efficiency of etching. That is, a small amount of Si x H x gas used for deposition during the etching process may be added to reduce the clapping phenomenon occurring in the upper region of the trench 11.

Here, the flow rate and the ratio of the NF 3 gas flow rate of the Si x H x gas provided during the etch process, it is preferable that the NF 3 gas flow rate two to ten times the number of Si x H x gas flow. In addition, it is effective that the O 2 gas flow rate is 0.5 to 2 times more than the flow rate of the Si x H x gas. In this case, the flow rate of Si x H x gas injected during the etching process is preferably 5 to 250 sccm.

In addition, the above-described deposition process and etching process is preferably performed in a temperature range of 100 to 700 degrees and a pressure range of 0.5 to several tens of mTorr. In addition, it is preferable that power of 1 kW to 10 kW is applied to the antenna 131 positioned above the substrate 10, and power of 0.2 kW to 7 kW is applied to the substrate placing means 110 on which the substrate 10 is placed. . This is based on the 300mm substrate 10. In consideration of the RF power value per unit area of the substrate, it is preferable to apply a larger power when the size of the substrate is larger than 300mm, and to apply a relatively small power when it is smaller than 300mm. desirable.

As described above, in the present embodiment, the deposition process and the etching process may be sequentially performed at least once using a single chamber capable of performing deposition and etching through plasma to uniformly fill the trench with an insulating film. In addition, by providing a deposition gas (eg, Si x H x gas) used in the deposition process during at least one etching process, it is possible to suppress the clipping phenomenon occurring in the upper region of the trench.

After the trench 11 is filled with the insulating film 12 in this manner, a portion of the insulating film 12 is removed to form an isolation layer outside the active region.

Of course, the present invention is not limited to the above description, and when the trench 11 is manufactured by self alignment, the trench 11 is filled with the insulating film 12, and the insulating film on the upper side of the hard mask film is removed to remove the device isolation film. Can be produced.

The above description focuses on forming a trench and fabricating a trench when fabricating an isolation layer for separation between devices. However, the present invention is not limited thereto, and the present invention can be applied to a case in which a predetermined gap (groove, hole, trench, etc.) is formed in the semiconductor device manufacturing process and the inside of the semiconductor device is filled with a predetermined material film.

Although the invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the invention is not limited thereto, but is defined by the claims that follow. Accordingly, one of ordinary skill in the art may variously modify and modify the present invention without departing from the spirit of the following claims.

1 is a cross-sectional view of a thin film deposition apparatus for a gap fill according to an embodiment of the present invention.

2 is a view for explaining a process flow of the gap fill thin film deposition method according to an embodiment.

3 to 6 are views for explaining a thin film deposition method for a gap fill according to an embodiment.

<Explanation of symbols for the main parts of the drawings>

10: substrate 11: trench

12: insulating film 100: chamber

110: substrate placing means 120: gas injection

130: plasma generating means 140: exhaust means

Claims (15)

Positioning a gapped semiconductor substrate in the reaction space; Generating a plasma in the reaction space; And The gap is formed by sequentially performing a deposition process of depositing a thin film using the deposition gas activated by the plasma and an etching process of etching a portion of the thin film deposited by using the etching gas activated by the plasma. A method of forming a thin film for gap fill, the method comprising: filling a gap, and providing a control gas together with the etching gas at least one of the plurality of etching processes. The method according to claim 1, The thin film forming method for gap fill, wherein the deposition gas and the control gas contain the same element. The method according to claim 2, The said same element is Si, The thin film formation method for gap fills. The method according to claim 1, The deposition gas may include a gas containing Si and an O 2 gas, the etching gas may include a gas including an F element, and the control gas may include a gas containing Si. The method according to claim 4, The thin film forming method for a gap fill provided with the control gas, the etching gas, and O 2 gas during the etching process. The method according to claim 5, The gap fill thin film formation method having a flow rate of the etching gas is 2 to 10 times more than the control gas flow rate. The method according to claim 5, A method for forming a thin film for gap fill, wherein the flow rate of the O 2 gas is 0.5 to 2 times greater than the control gas flow rate. The method according to claim 1, And the etching process in which the control gas is provided is repeated every predetermined number of times among a plurality of etching processes. Positioning a gapped semiconductor substrate in the reaction space; Generating a plasma in the reaction space; And A deposition process of depositing a thin film by supplying a deposition gas to the reaction space; And filling the gap by sequentially performing a plurality of etching processes to etch a portion of the deposited thin film, The etching process, Supplying the etching gas; And Supplying a control gas. The method according to claim 9, The gap fill method wherein the deposition gas and the control gas contain the same element. The method according to claim 10, The deposition gas may include a gas containing Si and an O 2 gas, the etching gas may include a gas including an element F, and the control gas may include a gas containing Si. The method according to claim 9, The gap fill method of the etching gas flow rate is 2 to 10 times more than the control gas flow rate. The method according to claim 9, O 2 gas is further supplied during the etching process, A gap fill method wherein the flow rate of the O 2 gas is 0.5 to 2 times more than the control gas flow rate. A chamber having a reaction space; Substrate placing means on which the substrate is placed; Plasma generating means for generating a plasma in the reaction space; And Sequentially providing a deposition gas and an etching gas to the reaction space a plurality of times, And a gas supply means for providing a control gas together with the etching gas at least once when providing the plurality of etching gases. The method according to claim 14, The control gas is a thin film forming apparatus for a gap fill containing a gas containing a Si element.
KR1020070093456A 2007-09-14 2007-09-14 Method for manufacturing thin film for gap-fill KR20090028125A (en)

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