KR20090019947A - Portable four-point probe for sheet resistance measurement with the dual configuration method - Google Patents
Portable four-point probe for sheet resistance measurement with the dual configuration method Download PDFInfo
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- KR20090019947A KR20090019947A KR1020070084261A KR20070084261A KR20090019947A KR 20090019947 A KR20090019947 A KR 20090019947A KR 1020070084261 A KR1020070084261 A KR 1020070084261A KR 20070084261 A KR20070084261 A KR 20070084261A KR 20090019947 A KR20090019947 A KR 20090019947A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- Measurement Of Resistance Or Impedance (AREA)
Abstract
Description
본 발명은 듀얼 형상 방법을 적용한 휴대용 4탐침 면저항 측정장치에 관한 것으로 상세하게는 일직선상으로 구성된 4 탐침(four point probe)을 이용하여 박막재료의 면저항 측정시 보정계수가 필요 없는 측정장치에 관한 것이다. 이 원리는 시료의 표면에 4 탐침을 접촉시키고, 바깥쪽 두 핀에 전류를 인가한 후, 안쪽 두 핀에서 전압을 측정하여 저항(Ra)를 구하는 것과, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류를 인가한 후, 두 번째 핀과 네 번째 핀에서 전압을 측정하여 저항(Rb)를 구하여 아래의 식에 의한 면저항(Rs)을 구하는 방법으로서 이 원리를 면저항 측정장치에 적용하여 자동측정 되도록 한 것이다. 즉, 면저항 Rs=Ka×Ra로서, 여기서를 면저항 측정장치에서 연산되도록 하여 측정회로를 설계 및 제작하여 성능을 확인하고, 상기 측정회로에 연결되어지는 4극 탐침의 프로브를 이용하여 시료를 측정 하는 것을 포함하여 이루어지는 것을 특징으로 하는 듀얼 형상 방법을 적용한 휴대용 4탐침 면저항 측정장치에 관한 것이다.The present invention relates to a portable four-probe sheet resistance measuring apparatus using a dual-shape method, and more particularly, to a measuring apparatus that does not require a correction factor when measuring sheet resistance of thin film materials using a four-point probe configured in a straight line. . This principle consists of contacting the four probes to the surface of the sample, applying a current to the outer two pins, measuring the voltage on the inner two pins to obtain a resistance (R a ), and the first and third pins of the four probes. After applying the current to the pin, measure the voltage at the second and fourth pins to get the resistance (R b ) and obtain the sheet resistance (R s ) by the following equation. Automatic measurement is made. That is, sheet resistance R s = K a × R a , where To be calculated by the sheet resistance measuring device to check the performance by designing and manufacturing a measuring circuit, and dual shape method comprising measuring a sample using a probe of a 4-pole probe connected to the measuring circuit The present invention relates to a portable four-probe sheet resistance measuring device.
종래에는 single configuration method를 적용한 측정장치로서 면저항 [Ω/square]이며, 시료 중심에서의 면저항 측정값과 가장자리 부근에서의 면저항 측정값이 크게 차이가 나는 단점이 있다. 그래서 본 발명은 이러한 종래 기술의 단점을 보완한 것으로서 시료의 측정위치에 관계없이 정밀정확한 면저항을 측정하기 위하여 dual configuration method를 적용한 것이며, 이 면저항 측정장치의 성능은 표준소급성이 유지된 표준 저항 및 분할 저항기를 사용하여 저항(R) 측정기능에서 gain 교정 및 직선성을 확인한다. Conventionally, as a measuring device applying a single configuration method, sheet resistance [ Square / square], and the sheet resistance measured at the center of the sample differs greatly from the sheet resistance measured near the edge. Therefore, the present invention is to compensate for the shortcomings of the prior art, the dual configuration method is applied to measure the accurate and accurate sheet resistance irrespective of the measurement position of the sample, the performance of the sheet resistance measuring apparatus is the standard resistance and Use a split resistor to verify gain calibration and linearity in the resistance (R) measurement function.
종래에는 인증표준물질을 사용하여 면저항을 측정하더라도, 시료의 중심에서와 가장자리(외곽측)에서의 측정값에 차이가 생기는 문제점이 있다.Conventionally, even if the sheet resistance is measured using a certified standard material, there is a problem in that the measured value at the center and the edge (outer side) of the sample occurs.
본 발명은 종래의 싱글 형상(single configuration) 기술을 적용한 면저항(Rs) 측정장치는 시료의 크기와 형상에 따라서 시료의 중심에서 측정한 값과 가장자리 부근에서 측정한 값의 차이가 크게 나타나는 단점을 보완한 dual configuration 기술을 적용한 것으로 상기의 문제점을 모두 해결할 수 있다. According to the present invention, the sheet resistance (R s ) measuring device using the conventional single configuration technique has a disadvantage in that the difference between the value measured at the center of the sample and the value measured near the edge is large depending on the size and shape of the sample. By applying the complementary dual configuration technology, all the above problems can be solved.
본 발명은 면저항 측정시 보정계수가 필요 없으며, 시료의 크기와 형상과 측정위치에 관계없이 정밀 정확한 측정을 할 수 있는 장점이 있으며, 균질한 박막 시료의 경우 시료의 중심에서 측정한 값과 측과 외곽측에서 측정한 값의 차이가 없다. 또한, 측정탐침을 일체형으로 제작하여 사용하므로 기존 측정탐침의 이중구조에서 발생하던 접촉저항이 발생하지 않는 효과도 있다. The present invention does not require a correction coefficient when measuring sheet resistance, and has the advantage of allowing accurate and accurate measurement regardless of the size, shape and measurement position of the sample. In the case of a homogeneous thin film sample, the measured value and the side and There is no difference in the values measured on the outside. In addition, since the measuring probe is manufactured and used integrally, there is an effect that the contact resistance generated in the dual structure of the existing measuring probe does not occur.
본 발명은 박막 시료의 면저항 측정시 시료의 크기와 위치에 관계없이 정밀정확한 면저항 측정을 할 수 있도록 설계된 것으로 dual configuration method 를 측정장치에 적용한 것이다. 이 원리는 시료의 표면에 4 탐침을 접촉시키고, 바깥쪽 두 핀에 전류를 인가한 후, 안쪽 두 핀에서 전압을 측정하여 저항(Ra)를 구하는 것과, 4 탐침의 첫 번째 핀과 세 번째 핀에 전류를 인가한 후, 두 번째 핀과 네 번째 핀에서 전압을 측정하여 저항(Rb)를 구하여 아래의 식에 의한 면저항(Rs)을 구하는 방법으로서 이 원리를 면저항 측정장치에 적용하여 면저항이 자동측정 되도록 한 것이다. The present invention is designed to measure precise and accurate sheet resistance regardless of the size and position of the sample when measuring the sheet resistance of the thin film sample is to apply a dual configuration method to the measuring device. This principle consists of contacting the four probes to the surface of the sample, applying a current to the outer two pins, measuring the voltage on the inner two pins to obtain a resistance (R a ), and the first and third pins of the four probes. After applying the current to the pin, measure the voltage at the second and fourth pins to get the resistance (R b ) and obtain the sheet resistance (R s ) by the following equation. The sheet resistance is automatically measured.
즉, 면저항 , That is, sheet resistance ,
를 면저항 측정장치에서 연산되도록 하여 면저항 측정값을 나타내게 한 것으로 4탐침(21)의 프로브(20)를 이용하여 시료(10)의 면저항을 측정하는 것을 포함하여 이루어진다. It is to be calculated by the sheet resistance measuring device to represent the sheet resistance measured value comprises the measurement of the sheet resistance of the
또한, 상기 프로브(20)의 4탐침(21)은 일측이 시료(10)와 접촉되어지고, 타측에 외부의 측정장치와 연결되어지는 연결선이 연결되는 일체형으로 이루어진다.In addition, the four
즉, 본 발명을 좀더 상세하게 설명하면 다음과 같다.That is, the present invention will be described in more detail as follows.
상기의 면저항 식에서 알 수 있듯이 Ra와 Rb를 구해야 하므로 4탐침이 시료의 표면에 접촉하게 되면 전자회로에 의한 릴레이의 구동에 의하여 자동으로 전류를 인가하고, 전압을 측정하여 저항값(Ra,Rb)이 측정되도록 하였다. 즉, 이러한 측정회로를 설계 제작한 후 4탐침(21)이 시료(10)에 접촉되어 면저항을 측정하게 된 다.As can be seen from the above sheet resistance equation, since R a and R b must be obtained, when the 4 probe comes into contact with the surface of the sample, the current is automatically applied by driving the relay by an electronic circuit, and the voltage is measured to measure the resistance value (R a , R b ) was measured. That is, after designing and manufacturing such a measuring circuit, the four
이러한, 4탐침(21) 프로브(20)는 박막 시료에 따라 탐침의 반경을 50 μm에서 500 μm의 범위로 선택하여 사용하게 된다.The 4
도 1은 본 발명에 따른 일체형 탐침이 개재된 프로브를 이용하여 시료를 동시에 다수의 프로브로 측정하는 것을 나타낸 사시도,1 is a perspective view showing the measurement of a sample with a plurality of probes at the same time using a probe interposed with an integrated probe according to the present invention,
도 2는 본 발명에 따른 일체형 탐침의 구성을 나타낸 정면도.Figure 2 is a front view showing the configuration of the integrated probe according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>
10 : 시료 20 : 프로브10
21 : 탐침21: probe
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Cited By (1)
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CN110192114A (en) * | 2017-01-09 | 2019-08-30 | 卡普雷斯股份有限公司 | Method for correcting position and system for carrying out position correction about the measurement of four probe resistances |
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JPH10123190A (en) | 1996-10-22 | 1998-05-15 | Sony Corp | Method for measuring sheet resistance of semiconductor substrate |
KR20000020765A (en) * | 1998-09-23 | 2000-04-15 | 윤종용 | Apparatus for measuring wafer resistance/thickness |
JP2005175237A (en) | 2003-12-12 | 2005-06-30 | Hitachi Ltd | Manufacturing method of thin film semiconductor device |
JP2007064799A (en) | 2005-08-31 | 2007-03-15 | Pentel Corp | Film surface resistance measuring instrument |
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CN110192114A (en) * | 2017-01-09 | 2019-08-30 | 卡普雷斯股份有限公司 | Method for correcting position and system for carrying out position correction about the measurement of four probe resistances |
US11131700B2 (en) | 2017-01-09 | 2021-09-28 | Capres A/S | Position correction method and a system for position correction in relation to four probe resistance measurements |
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