KR20090016107A - Apparatus for detecting internal voltage in semiconductor integrated circuit - Google Patents

Apparatus for detecting internal voltage in semiconductor integrated circuit Download PDF

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Publication number
KR20090016107A
KR20090016107A KR1020070080515A KR20070080515A KR20090016107A KR 20090016107 A KR20090016107 A KR 20090016107A KR 1020070080515 A KR1020070080515 A KR 1020070080515A KR 20070080515 A KR20070080515 A KR 20070080515A KR 20090016107 A KR20090016107 A KR 20090016107A
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KR
South Korea
Prior art keywords
temperature
sensing
signal
voltage
temperature information
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KR1020070080515A
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Korean (ko)
Inventor
고민정
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주식회사 하이닉스반도체
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Priority to KR1020070080515A priority Critical patent/KR20090016107A/en
Publication of KR20090016107A publication Critical patent/KR20090016107A/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

An internal voltage sensing device of a semiconductor integrated circuit of the present invention includes: first sensing means for sensing a level of an internal voltage and generating a first sensing signal having a potential level variable according to a temperature change; Second sensing means for sensing the level of the internal voltage to generate a second sensed signal having a potential level fixed even with temperature change; And switching means for selectively outputting the first sensing signal or the second sensing signal as a voltage sensing signal according to temperature information provided from a temperature information providing module.

Description

Apparatus for Detecting Internal Voltage in Semiconductor Integrated Circuit

The present invention relates to an internal voltage sensing device of a semiconductor integrated circuit, and more particularly, to an internal voltage sensing device of a semiconductor integrated circuit with improved adaptability to temperature conditions.

In general, a semiconductor integrated circuit receives voltages such as an external power supply (VDD) and ground voltage (VSS) from the outside of the chip to generate internal voltages such as a high potential voltage (VPP) and a substrate bias voltage (VBB) by itself. use. At this time, the semiconductor integrated circuit sets a target level of the internal voltage to sense whether the current internal voltage exceeds the target level, and controls the internal voltage to maintain the target level by pumping the internal voltage when it is not reached. To this end, the semiconductor integrated circuit includes an internal voltage sensing device, an oscillator and a charge pump. The internal voltage sensing device selectively detects whether the internal voltage has reached a target level and selectively enables the sensing signal. Thereafter, when the sensing signal is enabled, the oscillator is activated, and when the pulse signal is generated from the activated oscillator, the charge pump is activated, thereby maintaining the internal voltage.

Semiconductor integrated circuits can be used at various temperature conditions. In general, transistors in a semiconductor integrated circuit have a characteristic that a threshold voltage changes according to a temperature condition. Therefore, the level of each internal voltage must be generated differently according to each temperature condition to avoid malfunction due to the change of characteristics of each transistor.

Conventional semiconductor integrated circuits have been used with an internal voltage sensing device that predicts temperature conditions in advance and sets a target level of the internal voltage accordingly. However, in this case, a problem arises in that the semiconductor integrated circuit lacks adaptability to each environment in a product actually equipped, and in severe cases, a design modification is required, resulting in a loss of time and cost. In addition, the conventional semiconductor integrated circuit has been used with an internal voltage sensing device having a respective target level for a plurality of temperature conditions, but the problem that the occupied area increases as the various temperature conditions are set. As such, the internal voltage sensing device of the conventional semiconductor integrated circuit has a technical limitation that it is not easy to respond to temperature changes.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and there is a technical problem to provide an internal voltage sensing device of a semiconductor integrated circuit that improves adaptability to temperature conditions.

In addition, the present invention has another technical problem to provide an internal voltage sensing device of a semiconductor integrated circuit to improve the area efficiency.

The internal voltage sensing device of a semiconductor integrated circuit according to an embodiment of the present invention for achieving the above technical problem, by detecting the level of the internal voltage to generate a first sensing signal having a potential level variable according to temperature change First sensing means; Second sensing means for sensing the level of the internal voltage to generate a second sensed signal having a potential level fixed even with temperature change; And switching means for selectively outputting the first sensing signal or the second sensing signal as a voltage sensing signal according to temperature information provided from a temperature information providing module.

The internal voltage sensing device of the semiconductor integrated circuit of the present invention selectively generates a voltage sensing signal having a variable level or a voltage sensing signal having a fixed level according to a temperature section, thereby performing a voltage pumping operation in response to a temperature condition. Therefore, there is an effect of preventing time and cost loss due to design modification.

In addition, the internal voltage sensing device of the semiconductor integrated circuit of the present invention, by actively adapting to a variety of temperature conditions, it is possible to prevent the increase of the occupied area due to the plurality provided to improve the area efficiency and enable high integration. .

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a block diagram illustrating a configuration of an internal voltage sensing device of a semiconductor integrated circuit according to an exemplary embodiment of the present invention. The internal voltage is a substrate bias voltage VBB.

As illustrated, the internal voltage sensing device detects the level of the substrate bias voltage VBB and generates first sensing signal det1 having a potential level variable according to temperature change. ; Second sensing means (20) for detecting a level of the substrate bias voltage (VBB) in response to first temperature information (t1) to generate a second sensing signal (det2) having a potential level fixed even with temperature changes; Switching means (30) for selectively outputting the first sense signal (det1) or the second sense signal (det2) as a voltage sense signal (vdet) in accordance with first and second temperature information (t1, t2); And oscillation control means 40 for generating an oscillation enable signal osnb in response to the voltage sensing signal vette.

Here, the first and second temperature information (t1, t2) is a signal generated from the temperature information providing module, the temperature information providing module may be implemented as a Temperature Compensated Self Refresh (TCSR), Mode Resistor Set (MRS), etc. Can be.

The temperature information generated by the temperature information providing module is not limited to two, but for convenience of description, it is assumed that the two are as described above. The first temperature information t1 is a signal that determines whether the current temperature exceeds the first temperature (for example, 0 ° C.). Herein, it is assumed that the first temperature information t1 is at a high level when the current temperature exceeds the first temperature. The second temperature information t1 is a signal that determines whether the current temperature exceeds the second temperature (eg, 90 ° C). Herein, it is assumed that the second temperature information t2 is at a low level when the current temperature exceeds the second temperature.

When the combination of the first and second temperature information t1 and t2 is (0, 1), it can be seen that the current temperature is lower than the first temperature. In addition, when the combination of the first and second temperature information (t1, t2) is (1, 1) it can be seen that the current temperature is between the first temperature and the second temperature. When the combination of the first and second temperature information t1 and t2 is (1, 0), it can be seen that the current temperature is higher than the second temperature.

The first sensing means 10 reacts sensitive to temperature changes, and thus the first sensing signal det1 has a level that varies with temperature. That is, the first sensing signal det1 variably sets a target level of the substrate bias voltage VBB according to a temperature.

On the other hand, the second sensing means 20 responds insensitive to the temperature change, and thus the second sensing signal det2 has a fixed level even with the temperature change. That is, the second sensing signal det2 sets the target level of the substrate bias voltage VBB to a fixed level even when the temperature changes. At this time, the second sensing means 20 receives the first temperature information t1 to distinguish between a temperature condition lower than the first temperature and a temperature condition higher than the second temperature.

The switching means 30 outputs the first sense signal det1 as the voltage sense signal vette only when the combination of the first and second temperature information t1, t2 is (1, 1). In other cases, the second detection signal det2 is output as the voltage detection signal vette. This requires a more variable target voltage setting in a typical temperature environment (interval between the first temperature and the second temperature) and a fixed target voltage setting in other extreme temperature environments. to be.

Thereafter, the oscillation control means 40 sets the enable period of the oscillation enable signal osnb based on the potential level of the voltage sensing signal vette. Accordingly, the operation of the oscillator and the charge pump after the internal voltage sensing device is controlled, and the internal voltage maintains the target level set by the internal voltage sensing device.

As described above, the internal voltage sensing device of the semiconductor integrated circuit of the present invention distinguishes a temperature section from the first and second temperature information t1 and t2, and changes a target level of the internal voltage according to each temperature section. Set it. It also distinguishes between room temperature and extreme temperature situations to set a variable or fixed target level. By actively responding to each temperature situation with only one internal voltage sensing device, semiconductor integrated circuits can increase area margins.

FIG. 2 is a detailed configuration diagram of the first sensing means shown in FIG. 1.

As shown, the first sensing means 10 includes: a first pull-up unit 110 which pulls up the first node N1 in response to a reference voltage Vref and a ground voltage VSS; And a first pull-down unit 120 that pulls down the first node N1 in response to the ground voltage VSS and the substrate bias voltage VBB. The first detection signal det1 is formed at the first node N1.

In this case, the first pull-up unit 110 has a ground voltage VSS applied to a gate terminal, a reference voltage Vref applied to a source terminal, and a drain terminal connected to the first node N1. The transistor TR1 is included.

The first pull-down unit 120 includes a second transistor TR2 having the ground voltage VSS applied to a gate terminal thereof and a source terminal thereof connected to the first node N1; A third transistor TR3 having a substrate bias voltage VBB applied to a gate terminal thereof and a source terminal thereof connected to a drain terminal of the second transistor TR2; And a fourth transistor TR4 to which the substrate bias voltage VBB is applied to a gate terminal, a source terminal is connected to a drain terminal of the third transistor TR3, and the ground voltage VSS is applied to a drain terminal. do.

By such a configuration, when the temperature condition changes, the first sensing means 10 has threshold voltages of the third and fourth transistors TR3 and TR4 to which the substrate bias voltage VBB is applied to the gate terminal. As a result, the target level of the substrate bias voltage VBB is set more sensitively to temperature changes.

FIG. 3 is a detailed configuration diagram of the second sensing unit shown in FIG. 1.

As shown, the second sensing means 20 includes: a second pull-up unit 210 which pulls up a second node N2 in response to the reference voltage Vref and the ground voltage VSS; And a second pull-down unit 220 that pulls down the second node N2 in response to the first temperature information t1, the reference voltage Vref, and the substrate bias voltage VBB. The second detection signal det2 is formed at the second node N2.

Here, the second pull-up unit 210 may include a fifth transistor TR5 to which the ground voltage VSS is applied to a gate terminal and the reference voltage Vref is applied to a source terminal; And a sixth transistor TR6 to which the ground voltage VSS is applied to a gate terminal, a source terminal is connected to a drain terminal of the fifth transistor TR5, and a drain terminal is connected to the second node N2. do.

The second pull-down unit 220 is a seventh transistor in which the reference voltage Vref is applied to a gate terminal, a drain terminal is connected to the second node N2, and a source terminal is connected to the third node N3. (TR7); An eighth transistor TR8 having the reference voltage Vref applied to a gate terminal thereof and a drain terminal thereof connected to the third node N3; A ninth transistor TR9 having a gate terminal applied with the reference voltage Vref, a drain terminal connected to a source terminal of the eighth transistor TR8, and a source terminal connected to a fourth node N4; A tenth transistor TR10 to which the reference voltage Vref is applied to a gate terminal, a drain terminal is connected to the fourth node N4, and the substrate bias voltage VBB is applied to a source terminal; And an eleventh transistor TR11 having the first temperature information t1 input to a gate terminal, a source drain terminal connected to the third node N3, and a source terminal connected to the fourth node N4. Include.

With this configuration, the second sensing means 20 receives the ground voltage VSS and the reference voltage Vref having a constant level even when the temperature changes, even when the temperature changes. Therefore, the amount of change in the threshold voltage of each transistor is extremely small, so that the target level of the substrate bias voltage VBB is set more insensitive to temperature change. In this case, the first temperature information t1 is a high level signal when the current temperature condition exceeds the first temperature and becomes a low level when the temperature is lower than the first temperature. ) Generates the second sense signal det2 at a lower level if the current temperature exceeds the first temperature, and generates a second level of the second sense signal at a higher level if the current temperature is lower than the first temperature. det2).

FIG. 4 is a detailed configuration diagram of the switching means shown in FIG. 1.

As shown, the switching means 30 includes a combination unit 310 for combining the first temperature information (t1) and the second temperature information (t2) to generate a combination signal (cmb); And a switching unit 320 selectively outputting the first sensing signal det1 or the second sensing signal det2 as the voltage sensing signal vette in response to the combination signal cmb.

The combination unit 310 may include a NAND gate ND receiving the first temperature information t1 and the second temperature information t2; And an inverter IV receiving the output signal of the NAND gate ND and outputting the combined signal cmb.

The switching unit 320 may include a first pass gate PG1 through which the first detection signal det1 passes under the control of the combination signal cmb; And a second pass gate PG2 configured to pass the second detection signal det2 according to the control of the combination signal cmb.

With such a configuration, the combined signal cmb is at a high level if the present temperature is in a section between the first temperature and the second temperature, and at other levels a low level. Therefore, when the current temperature is in the interval between the first temperature and the second temperature, the first pass gate PG1 of the switching unit 320 is turned on, so that the first detection signal ( det1 is output as the voltage detection signal vette, and in other cases, the second pass gate PG2 is turned on, so that the second detection signal det2 is output as the voltage detection signal vette. .

As described above, the internal voltage sensing device of the semiconductor integrated circuit of the present invention detects a change in temperature by using a temperature information providing module, and accordingly sets a target level of the internal voltage variably according to the temperature change in a specific temperature section. In the other temperature section, the target level of the internal voltage which is fixed also to the temperature change is set. As such, since the internal voltage sensing device of the semiconductor integrated circuit of the present invention can perform a corresponding operation according to each temperature section by using the temperature information providing module, time and cost due to modifying the design according to each temperature condition It is possible to reduce the loss of. In addition, since only one internal voltage sensing device can cope with various temperature conditions, it is possible to block unnecessary increase in the occupied area to improve area efficiency.

As such, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing the technical spirit or essential features thereof. Therefore, the above-described embodiments are to be understood as illustrative in all respects and not as restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a block diagram showing the configuration of an internal voltage sensing device of a semiconductor integrated circuit according to an embodiment of the present invention;

FIG. 2 is a detailed configuration diagram of the first sensing means shown in FIG. 1;

3 is a detailed configuration diagram of the second sensing means shown in FIG. 1;

FIG. 4 is a detailed configuration diagram of the switching means shown in FIG. 1.

<Description of the symbols for the main parts of the drawings>

10: first sensing means 20: second sensing means

30: switching means 40: oscillation control means

Claims (9)

First sensing means for sensing a level of an internal voltage to generate a first sensed signal having a potential level that varies with temperature change; Second sensing means for sensing the level of the internal voltage to generate a second sensed signal having a potential level fixed even with temperature change; And Switching means for selectively outputting the first sensing signal or the second sensing signal as a voltage sensing signal in accordance with temperature information provided from a temperature information providing module; Internal voltage sensing device of a semiconductor integrated circuit comprising a. The method of claim 1, The temperature information includes first temperature information and second temperature information, wherein the first temperature information is a signal for determining whether the current temperature exceeds the first temperature, and the second temperature information indicates that the current temperature is the first temperature. The internal voltage sensing device of the semiconductor integrated circuit, characterized in that the signal is determined whether the second temperature is higher than the one temperature. The method according to claim 1 or 2, And said first sensing means generates said first sensing signal having a variable level in accordance with a temperature change. The method of claim 3, wherein The first sensing means, A pull-up unit configured to pull up the first node in response to the reference voltage and the ground voltage; And A pull-down unit which pulls down the first node in response to the ground voltage and the internal voltage; Including; And the first sensing signal is formed at the first node. The method according to claim 1 or 2, The second sensing means generates the second sensing signal having a fixed level even with a temperature change, and sets the level of the second sensing signal in response to the first temperature information. Internal voltage sensing device. The method of claim 5, wherein The second sensing means, A pull-up unit configured to pull up the first node in response to the reference voltage and the ground voltage; And A pull-down unit configured to pull down the first node in response to the first temperature information, the reference voltage, and the internal voltage; Including; And the second sensing signal is formed at the first node. The method of claim 2, The switching means outputs the first sensing signal as the voltage sensing signal when the current temperature is in a section between the first temperature and the second temperature in response to the first temperature information and the second temperature information. And outputting the second detection signal as the voltage detection signal when a current temperature is lower than the first temperature or higher than the second temperature. The method of claim 7, wherein The switching means, A combining unit generating a combined signal by combining the first temperature information and the second temperature information; And A switching unit configured to selectively output the first sensing signal or the second sensing signal as the voltage sensing signal in response to the combination signal; Internal voltage sensing device of a semiconductor integrated circuit comprising a. The method of claim 1, And oscillation control means for generating an oscillation enable signal in response to the voltage sensing signal.
KR1020070080515A 2007-08-10 2007-08-10 Apparatus for detecting internal voltage in semiconductor integrated circuit KR20090016107A (en)

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