KR20090015228A - Voltage sensing circuit - Google Patents

Abstract

A voltage sensing circuit is provided to compensate for characteristic difference of a MOS(Metal Oxide Semiconductor) due to temperature variation. At least one driving of pull-up and pull down is performed in accordance with the level of an input voltage. A voltage sensing unit(10) outputs a sensing signal corresponding to the voltage level. A temperature compensated type pull-up current control unit(20) uses a temperature sensitive current varying element which can changes current amount in accordance with temperature variation. The temperature compensated type pull-up current control unit compensates change of pull-up driving current amount in accordance with the temperature variation.

Description

Voltage Sensing Circuitry {VOLTAGE SENSING CIRCUIT}

1 is a circuit diagram showing a conventional power-up circuit.

2A and 2B are DC level waveform diagrams for explaining skew of a detection signal DET and a power-up signal PWRUP due to a difference in characteristics of the MOS transistors P1 and N1 according to temperature changes in FIG. 1.

3 is a block diagram illustrating an embodiment of a voltage sensing circuit of the present invention.

4 is a circuit diagram illustrating an example of a detailed configuration of FIG. 3.

5 is a circuit diagram illustrating another example of the detailed configuration of FIG. 3.

Figure 6 is a block diagram showing another embodiment of the voltage sensing circuit of the present invention.

7 is a circuit diagram illustrating an example of a detailed configuration of FIG. 6.

8 is a circuit diagram illustrating another example of the detailed configuration of FIG. 6.

The present invention relates to a voltage sensing circuit, and more particularly, to a voltage sensing circuit that can be used as a power up circuit of a semiconductor memory device.

In general, a semiconductor memory device includes various voltage sensing circuits, for example, a power-up for sensing an external power supply voltage level and controlling internal circuits to operate after the power supply voltage rises to a threshold level for a predetermined time. Circuitry can be initiated.

The conventional power-up circuit has a structure as shown in FIG. 1 and the operation thereof is described in detail as follows.

First, when the voltage between the source and the gate of the PMOS transistor P1 becomes higher than the threshold voltage as the power supply voltage VDD level increases during the initial operation, the PMOS transistor P1 is turned on to detect the detection signal DET. ) Becomes the high level, and the power-up signal PERUP is maintained in the disabled state, that is, the low level, by the inverter INV1 receiving the high level detection signal DET.

Thereafter, when the voltage VDD_DIV divided by the two resistors R1 and R2 rises above the threshold voltage of the NMOS transistor N1, the NMOS transistor N1 is turned on.

At this time, in the conventional power-up circuit, the driving capability of the NMOS transistor N1 is typically designed to be larger than that of the PMOS transistor P1, and the NMOS transistor N1 is turned on due to the difference in the driving capability. When it is turned on, the detection signal DET falls to the low level, and the power-up signal PWRUP is enabled to the high level.

On the other hand, the general MOS transistor is characterized in that when the temperature around the semiconductor memory increases, the threshold voltage is lowered to increase the driving capability and the turn-on current also increases, whereas, when the temperature around the semiconductor memory decreases, the threshold of the MOS transistor As the voltage increases, the driving capability decreases and the turn-on current also decreases.

However, the driving capability of the PMOS transistor and the NMOS transistor may not be the same according to the temperature change depending on the process characteristics of the semiconductor manufacturer or technology, and in this case, the conventional power-up circuit cannot perform stable power-up operation. There is a problem.

For example, as shown in FIGS. 2A and 2B, when the driving capability of the PMOS transistor P1 and the NMOS transistor N1 is the same according to a temperature change, it is detected when the power supply voltage VDD is at the 'V1' level. Suppose the levels of signal DET and power-up signal PWRUP shift.

At this time, the threshold voltage of the NMOS transistor N1 changes significantly and the threshold voltage of the PMOS transistor P1 changes small according to the temperature change, so that the driving capability of the NMOS transistor N1 is driven by the PMOS transistor P1. If greater than the capability, the transition of the detection signal DET and power-up signal PWRUP is at a level lower than 'V1', that is, 'V2'.

In this case, since the power-up signal PWRUP is enabled before the power supply voltage VDD sufficiently rises to the threshold level, the internal circuit of the semiconductor memory device may operate, so that a defect may occur in the memory operation.

In addition, as the temperature changes, the threshold voltage of the PMOS transistor P1 changes relatively and the threshold voltage of the NMOS transistor N1 changes small, so that the driving capability of the PMOS transistor P1 is driven by the NMOS transistor N1. If greater than the capability, the transition of the detection signal DET and the power-up signal PWRUP is higher than 'V1', that is, 'V3'.

In this case, as the enable time of the power-up signal PWRUP is delayed, there is a problem that the memory operation speed may decrease.

As such, in a conventional voltage sensing circuit using different types of MOS transistors such as a power-up circuit, when the driving capability of the MOS transistors is different according to temperature change, skew of the output according to the temperature change increases, Normal voltage sensing operation is difficult.

An object of the present invention is to provide a voltage sensing circuit that can solve the problem caused by the difference in the characteristics change of the MOS transistors according to the temperature change.

Another object of the present invention is to provide a voltage sensing circuit capable of improving the output characteristic of the voltage sensing circuit by reducing the difference in the characteristic change of the MOS transistors with temperature change in a voltage sensing circuit using different types of MOS transistors. Is in.

It is still another object of the present invention to provide a voltage sensing circuit capable of reducing skew of a power up signal due to temperature change in a power up circuit using different types of MOS transistors.

According to an aspect of the present invention, a voltage sensing circuit is configured to generate a detection signal corresponding to the voltage level by generating at least one of pull-up and pull-down according to an input level of a predetermined voltage. An output voltage detector; And a temperature-compensated pull-up current controller for compensating for the pull-up driving current amount change corresponding to the temperature change as a temperature-sensitive current variable element whose current amount varies with temperature change.

Here, the temperature-sensitive current variable element preferably has a characteristic that the amount of current changes in inverse proportion to the change in the amount of the pull-up driving current according to the temperature change.

The voltage detector includes MOS transistors whose driving characteristics are changed according to a temperature change, and the temperature compensated pull-up current controller is connected in parallel with a pull-up driving MOS transistor among the MOS transistors so that the pull-up according to the temperature change is performed. It is preferable to compensate for the change in the turn-on current amount of the driving MOS transistor.

The temperature compensated pull-up current control unit preferably includes a resistor connected in parallel with the pull-up driving MOS transistor as the temperature-sensitive current variable element.

The voltage detector may further include a distribution unit that distributes the voltage in a resistance ratio; And a driver configured to pull up the divided voltage when the divided voltage is less than or equal to a predetermined level by the MOS transistors, and to pull down the output voltage when the divided voltage exceeds a predetermined level to output a detection signal.

In the above configuration, the driving unit may include a PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a gate connected to a ground terminal to pull up driving; And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the divided voltage through a gate and pull down the gate.

The driving unit may include: a PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a pull-up driving unit receiving the divided voltage through a gate; And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the voltage through a gate and pull down the gate.

In response to the voltage detecting unit having such a configuration, the temperature compensating pull-up current controller may include a resistor connected in parallel with the PMOS transistor as the temperature sensitive current varying element.

The predetermined voltage corresponds to an external power supply voltage supplied to the semiconductor memory device, and the detection signal corresponds to a power up signal for controlling the operation of an internal circuit of the semiconductor memory device according to the level of the external power supply voltage. desirable.

According to another aspect of the present invention, there is provided a voltage sensing circuit for detecting a signal corresponding to the voltage level by driving at least one of pull-up and pull-down according to an input level of a predetermined voltage. A voltage detector for outputting a; And a temperature-compensated pull-down current controller for compensating for the pull-down driving current amount change corresponding to the temperature change as a temperature-sensitive current variable element in which the amount of current varies according to temperature change.

Here, the temperature-sensitive current variable element preferably has a characteristic that the amount of current changes in inverse proportion to the change in the amount of pull-down driving current according to the temperature change.

The voltage detector includes MOS transistors whose driving characteristics are changed according to a temperature change, and the temperature compensated pull-down current controller is connected in parallel with a pull-down driving MOS transistor among the MOS transistors so that the pull-down according to the temperature change is performed. It is preferable to compensate for the change in the turn-on current amount of the driving MOS transistor.

The temperature compensated pull down current controller may include a resistor connected in parallel with the pull down driving MOS transistor as the temperature sensitive current variable element.

The voltage detector may further include a distribution unit that distributes the voltage in a resistance ratio; And a driver configured to pull up the divided voltage when the divided voltage is less than or equal to a predetermined level by the MOS transistors, and to pull down the output voltage when the divided voltage exceeds a predetermined level to output a detection signal.

In the above configuration, the driving unit may include a PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a gate connected to a ground terminal to pull up driving; And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the divided voltage through a gate and pull down the gate.

The driving unit may include a PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a pull-up driving unit receiving the divided voltage through a gate; And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the voltage through a gate and pull down the gate.

In response to the voltage detector having the above configuration, the temperature compensation pull-down current controller may include a resistor connected in parallel with the NMOS transistor between the output terminal and the ground terminal as the temperature sensitive current variable element. Do.

The predetermined voltage corresponds to an external power supply voltage supplied to the semiconductor memory device, and the detection signal corresponds to a power up signal for controlling the operation of an internal circuit of the semiconductor memory device according to the level of the external power supply voltage. desirable.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The present invention senses the level of a predetermined voltage by the pull-up and pull-down driving, and compensates for the current amount change by the pull-up or pull-down driving according to the temperature change, the pull-up driving capability and the pull-down driving according to the temperature change It can reduce the gap between abilities.

Specifically, referring to FIG. 3, the voltage sensing circuit of the present invention includes a voltage detector 10, a temperature compensated pull-up current controller 20, and an output unit 30.

The voltage detector 10 includes MOS transistors whose driving characteristics are different from each other according to a temperature change, and at least one driving of pull-up and pull-down of each of the MOS transistors occurs according to a level of a predetermined voltage VIN input thereto, thereby causing a voltage VIN. The detection signal DET corresponding to the level is output. The voltage VIN may correspond to an external power supply voltage or an internal power supply voltage of the semiconductor memory device.

The temperature-compensated pull-up current controller 20 is a temperature-sensitive current variable element whose current amount varies according to temperature change, and compensates for a change in current amount due to pull-up driving of the MOS transistor of the voltage detector 10 according to temperature change. do.

In addition, the output unit 30 drives the detection signal DET and outputs the detection output signal DET_OUT. The detection output signal DET_OUT may correspond to the power-up signal PWRUP when the voltage VIN is an external power supply voltage of the semiconductor memory device.

The voltage detector 10, the temperature compensation type pull-up current controller 20, and the output unit 30 may be specifically configured as shown in FIG. 4.

Referring to FIG. 4, the voltage detector 10 pulls up a voltage divider 12 that distributes the voltage VIN to a resistance ratio and when the voltage VIN_DIV divided by the MOS transistors is equal to or less than a predetermined level, and the divided voltage VIN_DIV is a predetermined level. It includes a driving unit 14 for driving the pull-down when exceeding the output signal as the detection signal DET.

Here, the divider 12 may be composed of two resistors R3 and R4 connected in series between the input terminal to which the voltage VIN is input and the ground VSS terminal, and are distributed to a node connecting the two resistors R3 and R4. The output voltage VIN_DIV is output.

The driver 14 is connected between an input terminal to which the voltage VIN is input and an output terminal to which the detection signal DET is output, and a PMOS transistor P2 having a gate connected to the ground VSS terminal, an output terminal and a ground VSS output of the detection signal DET. The NMOS transistor N2 is connected between the terminals and supplied with the voltage VIN_DIV distributed to the gate.

The temperature compensating pull-up current controller 20 is connected in parallel with the pull-up driving MOS transistor of the voltage detector 10 to compensate for the change in the turn-on current amount of the pull-up driving MOS transistor according to the temperature change, And a temperature sensitive current variable element having a current amount change characteristic inversely proportional to a change in turn on current amount of the pull-up driving MOS transistor. The temperature-compensated pull-up current controller 20 having such a temperature-sensitive current variable element includes a resistor R5 connected in parallel with the PMOS transistor P2 between an input terminal to which a voltage VIN is input and an output terminal to which a detection signal DET is output. It is preferable to include).

The output unit 30 may be configured as an inverter INV2 that inverts the detection signal DET and outputs the detection signal DET_OUT.

In addition, the driving unit 14 and the output unit 30 may be configured as shown in FIG. 5 as another example.

Referring to FIG. 5, the driving unit 14 is connected between an input terminal to which the voltage VIN is input and an output terminal to which the detection signal DET is output, and the PMOS transistor P3 receiving the voltage VIN_DIV distributed to the gate, and the detection signal DET are connected to each other. The NMOS transistor N3 may be connected between the output terminal of the output terminal and the ground VSS terminal and supplied with the voltage VIN to the gate.

The output unit 30 may include an inverter INV3 that inverts the detection signal DET and an inverter INV4 that inverts the output of the inverter INV3 to output the detection output signal DET_OUT.

The voltage sensing circuit according to an embodiment of the present invention having such a configuration compensates the driving capability according to the temperature of the PMOS transistor P2 or P3 of the voltage detector 10 using the temperature compensation type pull-up current controller 20. There is a characteristic.

In detail, the MOS transistors P2, N2, or P3, N3 included in the voltage detector 10 have a threshold voltage when the temperature increases, and a threshold voltage increases when the temperature decreases. There is a characteristic that the ability and the turn-on current are proportional.

On the other hand, the temperature-compensated pull-up current controller 20 includes a temperature-sensitive current variable element whose current amount varies with temperature, and in particular, the current amount is inversely proportional to the temperature rise. As an example, a resistor R4 or R5 may be presented in which the resistance value changes in inverse proportion to the temperature change.

As described above, the temperature-compensated pull-up current controller 20 is a current amount change characteristic inversely proportional to the change in the turn-on current amount of the PMOS transistor P2 or P3 according to the temperature change, and thus the turn-on current amount of the PMOS transistor P2 or P3. Compensate for change.

Referring to the configuration of FIG. 4 as an example, when the temperature increases, the threshold voltage of the PMOS transistor P2 may decrease to increase the amount of current passing through the PMOS transistor P2. At this time, the resistor R4 connected in parallel to the PMOS transistor P2 increases in resistance when the temperature rises, thereby reducing the amount of current passing through the resistor R4, so that the PMOS transistor P2 corresponds to the temperature rise. Even if the amount of turn-on current increases, the amount of pull-up current flowing to the node where the detection signal DET is output may be kept constant.

For example, assuming that the amount of current flowing through the PMOS transistor P2 is 1 mA when the pull-up driving is performed at room temperature, and that the amount of current flowing through the resistor R4 is 1 mA, the pull-down driving is performed through the NMOS transistor N2. The amount of current flowing may be 2 mA. At this time, when the temperature rises and the amount of current flowing through the PMOS transistor P2 increases to 1.5 mA, the amount of current flowing through the resistor R4 may decrease to 0.5 mA, and thus, the NMOS transistor N2 is desired. The total amount of current seen can be constant at 2mA.

As described above, even when the turn-on current amount of the PMOS transistor P2 increases when the temperature rises, the amount of current flowing through the resistor R4 decreases, thereby compensating for the change in the amount of current at the node where the detection signal DET is output as the temperature rises. . Therefore, there is an effect that the driving ability of the PMOS transistor P2 may appear to be kept constant without increasing as compared with the driving capability of the NMOS transistor N2 as the temperature rises.

On the other hand, when the temperature decreases, the threshold voltage of the PMOS transistor P2 may increase to decrease the amount of current passing through the PMOS transistor P2. At this time, the resistance R4 connected in parallel to the PMOS transistor P2 decreases in resistance when the temperature decreases, so that the amount of current passing through the resistor R4 increases, so that the PMOS transistor P2 corresponds to the temperature drop. Even if the amount of turn-on current decreases, the amount of pull-up current flowing to the node where the detection signal DET is output may be kept constant.

For example, assuming that the amount of current flowing through the PMOS transistor P2 is 1 mA when the pull-up driving is performed at room temperature, and that the amount of current flowing through the resistor R4 is 1 mA, the pull-down driving is performed through the NMOS transistor N2. The amount of current flowing may be 2 mA. At this time, when the temperature decreases and the amount of current flowing through the PMOS transistor P2 decreases to 0.5 mA, the amount of current flowing through the resistor R4 may increase to 1.5 mA, and thus, the NMOS transistor N2 is desired. The total amount of current seen can be constant at 2mA.

As described above, even when the turn-on current amount of the PMOS transistor P2 decreases when the temperature decreases, the amount of current flowing through the resistor R4 increases, thereby compensating for the change in the amount of current at the node at which the detection signal DET is output due to the temperature drop. . Therefore, there is an effect that the driving ability of the PMOS transistor P2 may appear to be kept constant without falling compared to the driving capability of the NMOS transistor N2 as the temperature decreases.

As described above, the voltage sensing circuit according to an embodiment of the present invention is a temperature-sensitive current variable element having a current amount change characteristic inversely proportional to the change in the turn-on current amount of the PMOS transistor P2 or P3 according to the temperature change. The current amount change of the PMOS transistor P2 or P3 is compensated for.

As a result, the same effect as the difference in the characteristics of the MOS transistors P2 and N2 may be reduced, thereby solving the problem caused by the difference in the characteristics of the MOS transistors P2 and N2 due to temperature change. In addition, since the enable time of the detection output signal DET_OUT does not change greatly with temperature, there is an effect that the output characteristic of the voltage sensing circuit can be improved.

In particular, when the voltage sensing circuit according to an embodiment of the present invention is used as a power-up circuit, the skew of the detection output signal DET_OUT according to the temperature change, that is, the power-up signal is reduced, thereby reducing memory malfunction or memory speed. There is an effect that can be prevented.

As another embodiment of the voltage sensing circuit of the present invention, the structure of FIG. 6 may be disclosed.

Referring to FIG. 6, a voltage sensing circuit according to another embodiment of the present invention includes a voltage detector 10, an output unit 30, and a temperature compensated pull-down current controller 40. Here, the voltage detector 10 and the output unit 30 is the same configuration as the embodiment of the present invention, it will be omitted for convenience of description.

The temperature compensated pull-down current controller 40 is a temperature-sensitive current variable element whose current amount varies with temperature change, and compensates for the current amount change by pull-down driving of the MOS transistor of the voltage detector 10 according to the temperature change. For example, it may be configured as shown in FIGS. 7 and 8. Here, the voltage detector 10 and the output unit 30 of FIG. 7 are the same as those of FIG. 4, and the voltage detector 10 and the output unit 30 of FIG. 8 are the same as those of FIG. 5.

That is, referring to FIGS. 7 and 8, the temperature compensated pull-down current controller 20 is connected in parallel with the pull-down driving MOS transistor N2 or N3 of the voltage detector 10 to perform the pull-down according to a temperature change. A temperature sensitive current variable element that controls a change in the amount of current flowing to the driving MOS transistor M2 or N3 and has a change amount of current inversely proportional to a change in the turn-on current amount of the pull-down driving MOS transistor N2 or N3 according to the temperature change. It includes. The temperature-compensated pull-down current controller 20 having such a temperature-sensitive current variable element includes a resistor R6 connected in parallel with the NMOS transistor N2 or N3 between an output terminal at which the detection signal DET is output and a ground VSS terminal. It is preferable to include.

In the voltage sensing circuit according to another exemplary embodiment having the above configuration, the amount of current in inverse proportion to the change in the turn-on current amount of the NMOS transistors N2 or N3 according to the temperature change of the temperature compensated pull-down current controller 20 is changed. The characteristic compensates for the amount of turn-on current of the NMOS transistors N2 or N3.

That is, referring to the configuration of FIG. 7 as an example, when the temperature increases, the threshold voltage of the NMOS transistor N2 may decrease to increase the amount of current passing through the NMOS transistor N2. At this time, the resistor R6 connected in parallel to the NMOS transistor N2 increases in resistance when the temperature rises, thereby reducing the amount of current passing through the resistor R6, so that the NMOS transistor N2 corresponds to the temperature rise. Even if the amount of turn-on current increases, the amount of pull-down current flowing to the node to which the detection signal DET is output may be kept constant.

As described above, even when the turn-on current amount of the NMOS transistor N2 increases when the temperature rises, the amount of current flowing through the resistor R6 decreases, thereby making it possible to compensate for the change in the amount of current at the node where the detection signal DET is output as the temperature rises. . Therefore, there is an effect that the driving capability of the NMOS transistor N2 may appear to be kept constant without being increased compared to the driving capability of the PMOS transistor P2 as the temperature rises.

On the other hand, when the temperature decreases, the threshold voltage of the NMOS transistor N2 increases to decrease the amount of current passing through the NMOS transistor N2. At this time, the resistor R6 connected in parallel to the NMOS transistor N2 decreases in resistance when the temperature decreases, so that the amount of current passing through the resistor R6 increases, so that the NMOS transistor N2 corresponds to the temperature drop. Even if the amount of turn-on current decreases, the amount of pull-down current flowing to the node to which the detection signal DET is output may be kept constant.

As described above, even when the turn-on current amount of the NMOS transistor N2 decreases when the temperature decreases, the amount of current flowing through the resistor R6 increases, thereby compensating for the change in the amount of current at the node at which the detection signal DET is output due to the temperature drop. . Accordingly, there is an effect that the driving ability of the NMOS transistor N2 may appear to be kept constant without decreasing compared to the driving capability of the PMOS transistor P2 as the temperature decreases.

As described above, the voltage sensing circuit according to another embodiment of the present invention is a temperature-sensitive current variable element having a current amount change characteristic inversely proportional to the change in the turn-on current amount of the NMOS transistor N2 or N3 according to the temperature change. The change in the amount of current of the NMOS transistor N2 or N3 may be compensated for.

For this reason, the voltage sensing circuit according to another embodiment of the present invention can obtain the same effect as the embodiment of the present invention.

The present invention is a temperature-sensitive current variable element having a current change characteristic that is inversely proportional to the change in turn-on current amounts of MOS transistors according to temperature changes, thereby controlling the current change of the MOS transistors so that the change in characteristics of the MOS transistors varies with temperature changes. There is an effect that can solve the problems caused by.

In addition, when sensing a predetermined voltage by using the MOS transistors, by compensating for the change in the amount of current of some of the MOS transistors according to the temperature change, it is possible to reduce the difference in the characteristic change of the MOS transistors according to the temperature change Therefore, there is an effect that the output characteristics of the voltage sensing circuit can be improved.

In addition, the present invention can reduce the difference in the characteristics change of the MOS transistors provided in the power-up circuit according to the temperature change applied to the power-up circuit, so that the skew of the power-up signal according to the temperature change reduces the memory operation failure or memory There is an effect that can prevent the operation speed decrease.

While the invention has been shown and described with reference to specific embodiments, the invention is not limited thereto, and the invention is not limited to the scope of the invention as defined by the following claims. Those skilled in the art will readily appreciate that modifications and variations can be made.

Claims (18)

A voltage detector configured to generate at least one of pull-up and pull-down driving according to the input voltage level and output a detection signal corresponding to the voltage level; And And a temperature-compensated pull-up current controller for compensating for the pull-up driving current amount change corresponding to the temperature change as a temperature-sensitive current variable element whose current amount varies with temperature change. The method of claim 1, And the temperature sensitive current varying element is characterized in that the amount of current changes in inverse proportion to the change in the amount of pull-up driving current according to the temperature change. The method of claim 1, The voltage detector includes MOS transistors whose driving characteristics are changed according to a temperature change, and the temperature compensated pull-up current controller is connected in parallel with a pull-up driving MOS transistor among the MOS transistors so that the pull-up according to the temperature change is performed. A voltage sensing circuit comprising a change in the amount of turn-on current of a driving MOS transistor. The method of claim 3, wherein And the temperature compensating pull-up current controller includes a resistor connected in parallel with the pull-up driving MOS transistor as the temperature-sensitive current varying element. The method of claim 1, The voltage detector, A distribution unit for distributing the voltage in a resistance ratio; And And a driver configured to pull up the divided voltage when the divided voltage is less than or equal to a predetermined level by the MOS transistors, and to pull down the output voltage when the divided voltage exceeds a predetermined level to output a detection signal. . The method of claim 5, wherein The driving unit, A PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a gate connected to a ground terminal to pull up driving; And And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the divided voltage through a gate and pull down the gate. The method of claim 5, wherein The driving unit, A PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a pull-up driving device receiving the divided voltage through a gate; And And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the voltage through a gate and pull down the gate. The method according to claim 6 or 7, And the temperature compensating pull-up current controller includes a resistor connected in parallel with the PMOS transistor as the temperature sensitive current varying element. The method of claim 1, The predetermined voltage corresponds to an external power supply voltage supplied to the semiconductor memory device, and the detection signal corresponds to a power up signal for controlling an operation of an internal circuit of the semiconductor memory device according to the level of the external power supply voltage. Voltage sensing circuit. A voltage detector configured to generate at least one of pull-up and pull-down driving according to the input voltage level and output a detection signal corresponding to the voltage level; And And a temperature-compensated pull-down current controller for compensating for the change of the pull-down driving current amount corresponding to the temperature change as a temperature-sensitive current variable element whose current amount varies according to temperature change. The method of claim 10, And the temperature sensitive current varying element is characterized in that the amount of current changes in inverse proportion to the change in the amount of pull-down driving current in response to the temperature change. The method of claim 10, The voltage detector includes MOS transistors whose driving characteristics are changed according to a temperature change, and the temperature compensated pull-down current controller is connected in parallel with a pull-down driving MOS transistor among the MOS transistors so that the pull-down according to the temperature change is performed. A voltage sensing circuit comprising a change in the amount of turn-on current of a driving MOS transistor. The method of claim 12, And the temperature compensating pull down current controller includes a resistor connected in parallel with the pull down driving MOS transistor as the temperature sensitive current varying element. The method of claim 10, The voltage detector, A distribution unit for distributing the voltage in a resistance ratio; And And a driver configured to pull up the divided voltage when the divided voltage is less than or equal to a predetermined level by the MOS transistors, and to pull down the output voltage when the divided voltage exceeds a predetermined level to output a detection signal. . The method of claim 14, The driving unit, A PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a gate connected to a ground terminal to pull up driving; And And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the divided voltage through a gate and pull down the gate. The method of claim 14, The driving unit, A PMOS transistor connected between an input terminal to which the voltage is input and an output terminal to which the driving signal is output, and a pull-up driving device receiving the divided voltage through a gate; And And an NMOS transistor connected between the output terminal and the ground terminal and configured to receive the voltage through a gate and pull down the gate. The method according to claim 15 or 16, And the temperature compensating pull-down current controller includes a resistor connected in parallel with the NMOS transistor between the output terminal and the ground terminal as the temperature sensitive current variable element. The method of claim 10, The predetermined voltage corresponds to an external power supply voltage supplied to the semiconductor memory device, and the detection signal corresponds to a power up signal for controlling an operation of an internal circuit of the semiconductor memory device according to the level of the external power supply voltage. Voltage sensing circuit.

Images