KR20090010909A - Photomask information acquisition method, photomask quality indication method, method of assisting electronic device's fabrication, electronic device fabrication method, and photomask product - Google Patents

Abstract

A photomask information acquisition method is provided to allow a user to determine the exposure condition of the photo mask and manufacturing condition of the target object considering the characteristic of the resistor since a photo mask including a pattern data of the penetrated light is generated. A resist film on a target layer to be etched is exposed under a certain exposure condition by using a certain transfer pattern composed of light shielding unit, light-transmitting unit and half light-transmitting unit, and the resist residue which is used as a mask in etching process has different resist pattern, which is used for obtaining a photomaks. By using an approximate exposure condition to a certain condition, the photomask or a test mask is exposed and the transmission light pattern of the potomask or test photomask is obtained through an image pick up device. The potomask information including transmission light pattern data is generated based on obtained transmission light pattern.

Description

Photomask Information Acquisition Method, Photomask Quality Display Method, Electronic Device Manufacturing Support Method, Electronic Device Manufacturing Method, and Photomask Product DEVICE FABRICATION METHOD, AND PHOTOMASK PRODUCT}

The present invention provides a method of acquiring photomask information for acquiring information about a photomask used for manufacturing an electronic device, a quality display method of a photomask for displaying the quality of the photomask, and manufacturing an electronic device for supporting the manufacture of the electronic device. A support method, a method of manufacturing an electronic device, and a photomask product.

In addition, as an electronic device, display devices typified by flat panel display (FPD) devices, in particular, liquid crystal display devices, for example, acquisition of photomask information useful for manufacturing electronic devices such as thin film transistors (TFTs) and color filters (CFs). The method, the quality display method of the photomask which displays the quality of a photomask, the manufacturing support method of the electronic device which supports manufacture of these electronic devices, and the manufacturing method of an electronic device.

Currently, in the field of LCD (Liquid Crystal Display), a liquid crystal display device (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD) with a thin film transistor (hereinafter referred to as TFT) is a CRT. Commercialization is currently progressing rapidly due to the advantages of being thinner and lower power consumption compared to (cathode ray tubes).

The TFT-LCD includes a TFT substrate having a structure in which TFTs are arranged in each pixel arranged in a matrix form, and a color filter in which red, green, and blue pixel patterns are arranged corresponding to each pixel under superposition of a liquid crystal layer. It has a schematic structure. In TFT-LCD, there are many manufacturing processes, and it was manufactured using 5-6 photomasks only by TFT substrate.

Under these circumstances, a method of manufacturing a TFT substrate using four photomasks has been proposed. This method reduces the number of masks used by using a photomask (hereinafter referred to as a gray tone mask) having a light shielding portion, a light transmitting portion, and a semi-transmissive portion (gray tone portion). Here, the semi-transmissive portion refers to a portion that reduces the amount of transmission of the exposure light that passes through when the pattern is transferred to the transfer target by using a mask and controls the remaining film amount after development of the photoresist film on the transfer target in a desired range. The photomask which has such a semi-transmissive part together with a light shielding part and a light transmitting part is called a gray tone mask.

The following are illustrated as a manufacturing process of the TFT substrate using this gray tone mask. A metal film for gate electrodes is formed on a glass substrate, and a gate electrode is formed by the photolithography process using a photomask. Thereafter, a gate insulating film, a first semiconductor film (a-Si: amorphous silicon), a second semiconductor film (N + a-Si), a metal film for source / drain, and a positive photoresist film are formed. Next, a positive photoresist film is exposed and developed using a gray tone mask having a light shielding part, a light transmitting part, and a semi-transmissive part, thereby covering the TFT channel part and the source / drain formation area, the data line formation area, and also the channel. The first resist pattern is formed so that the sub formation region is thinner than the source / drain formation region.

Next, the source / drain metal film and the second and first semiconductor films are etched using the first resist pattern as a mask. Next, the thin resist film in the channel portion forming region is removed by ashing with oxygen to form a second resist pattern. Then, the source / drain metal film is etched using the second resist pattern as a mask, the source / drain is formed, the second semiconductor film is then etched, and finally, the remaining second resist pattern is peeled off.

In manufacture of the photomask used for manufacture of such an electronic device, evaluation of a completed photomask is performed about the pattern shape, the raw material of the film | membrane formed in a translucent part, or a film thickness. Based on this evaluation result, the pattern shape, etc. are corrected and changed, and the next photomask is manufactured to optimize the pattern shape, the material of the film and the film thickness.

Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2004-309327) acquires a transmitted light image of a photomask by a microscope using a predetermined light source at the time of evaluating a gray tone mask having a fine pattern, and images the transmitted light image. It is described to obtain a transmission image corresponding to the resolution of the exposure machine by performing a process to be applied by the processing software. This technique predicts the photomask transmittance when the pattern is transferred to the resist film based on the transmitted light image thus applied.

In addition, Patent Document 2 (Japanese Laid-Open Patent Publication No. 2003-307500) describes a technique of scanning a semi-transmissive portion of a photomask to obtain a threshold of transmittance and to evaluate it based on this threshold.

By the way, in manufacture of the electronic device using the photomask mentioned above, the process of exposing through the photomask to the resist film formed on the to-be-transferred body, for example using the exposure machine which has a wavelength range in i line | wire-g line | wire. This applies. However, the shape of the resist pattern on the transfer object obtained by such exposure is not necessarily constant. For example, since the wavelength characteristics are different for each of the exposure apparatuses, and there is also a change in the illumination of the exposure apparatus over time, it is not possible to conclude that the patterns of the light intensity passing therethrough are the same even when the same photomask is used. In particular, when the photomask is a gray tone mask having the translucent portion, there are the following problems.

First, the transmittance of the semi-transmissive portion is different depending on the spectral characteristics of the exposure machine when the photomask is actually exposed. This is because, when a translucent film made of a predetermined material is used, the transmittance of the translucent film has a wavelength dependency. Moreover, since the influence degree of the diffraction which arises in a semi-transmissive part differs by the shape of the pattern formed on the optical system and gray tone mask of an exposure machine, a difference arises in actual transmittance | permeability. Because of these factors, the transmittance (hereinafter referred to as effective transmittance) of the exposure light actually passing through the translucent portion varies. In particular, in the manufacture of TFTs in which the channel portion tends to be miniaturized, it has been found by the inventors that such fluctuations in the effective transmittance cannot be overlooked. It demonstrates below.

As a method of forming a gray tone part of a gray tone mask, there is a method of forming a semi-transmissive film which reduces exposure light by a predetermined amount and transmits it. The semi-transmissive film means a film having a transmittance of, for example, 20% to 60% when the exposure light transmittance of the transparent substrate is 100%.

In the gray tone mask, when the transmitted light intensity in the gray tone portion is set to Ig, the transmitted light intensity in a sufficiently wide white (transmission) region is set to Iw and the transmitted light intensity in a sufficiently wide black (shielding) region is set to Ib. The value expressed by can be taken as the transmittance of the gray tone part.

Transmittance = {Ig / (Iw-Ib)} × 100 (%)

Here, it is considered that the transmitted light intensity Ig in the gray tone portion is determined by the transmittance inherent to the semi-transmissive film (transmittance determined by the film and the exposure light without depending on the pattern shape). The management of such transmittance does not cause any problem in particular when the area of the gray tone part is sufficiently large with respect to the resolution of the exposure machine, and when the spectral characteristic of the exposure light is constant, a constant value of transmittance is taken. However, when the area of the gray tone part becomes small, the influence of diffraction cannot be ignored, and the pattern shape of the semi-transmissive part is partially unresolution. For this reason, due to the influence of the light shielding portion or the light transmitting portion adjacent to the gray tone portion, the transmittance becomes a value different from the transmittance inherent in the translucent film during the actual exposure. In other words, the transmittance inherent in the translucent film may not be treated as an effective value.

For example, in the gray tone mask for manufacturing a thin film transistor, a gray tone mask in which a region corresponding to a channel portion is a gray tone portion and a region corresponding to an adjacent source and drain in the form of sandwiching it between the light shielding portions is used. . In this gray tone mask, as the area (width) of the channel portion decreases, the boundary with the adjacent light shielding portion is applied (not resolved) under the actual exposure conditions, and the transmittance of the exposure light of the channel portion is inherent in the translucent film. Lower than In particular, an exposure machine for large-sized masks, such as a liquid crystal display device manufacture, has a low resolution, unlike a stepper for semiconductor device manufacture.

In addition, in the above-mentioned large size mask exposure machine, the light source wavelength has a wide wavelength range over i-g line in order to secure the light amount rather than the resolution. If the spectral characteristics of the exposure machine are different, the resolution is therefore different, so that the variation factor becomes larger.

In recent thin film transistors (TFTs), techniques such as increasing the operating speed of the liquid crystal by reducing the width of the channel portion or increasing the brightness of the liquid crystal by decreasing the size of the channel portion are proposed. In the gray tone mask which manufactures such a thin film transistor, when forming a gray tone part other than the transmittance | permeability of the translucent film itself, it can be said that it is necessary to consider the "effective transmittance" defined under actual exposure conditions.

Further, even in a gray tone mask in which a fine light shielding pattern having a dimension below the resolution limit is formed as a gray tone part, since the resolution degree of the fine pattern is different depending on the spectral characteristics of the exposure machine, the "effective transmittance" under the actual exposure conditions is also provided. Need to consider.

In the manufacture of electronic devices, it is necessary to obtain a resist pattern having a line width of a predetermined dimension and a resist residual film value in a predetermined range, and a photomask capable of realizing this is required. Therefore, on the basis of this specification, in the manufacture of a photomask, it is advantageous to manufacture a photomask having a semi-transmissive portion of an effective transmittance having a predetermined line width and giving a predetermined resist residual film value. Here, the photomask may be any of the following two types. The first type is a fine pattern type gray tone mask (referred to as a fine pattern type gray tone mask) which adjusts the amount of exposure light to be transmitted by a pattern having a line width below the resolution limit under exposure conditions. The second type is a halftone type gray tone mask (referred to as a semi-transmissive film type gray tone mask) which adjusts the amount of transmission by using a semi-transmissive film that transmits a part of the exposure light.

In addition, the inventors of the present invention found that, in exposure conditions (specific exposure wavelength distribution, specific optical conditions) actually used in the manufacture of an electronic device, a narrow area such as a line width of a specific mask pattern, particularly a semi-transmissive film portion, and a thin portion Conditions of evaluating the photomask based on the result of exposing the device having a width (for example, a pattern portion less than 3 microns in width) or manufacturing an electronic device using the photomask (developing of a resist pattern) Conditions, etching conditions of the film to be processed, etc.).

SUMMARY OF THE INVENTION The present invention has been proposed in view of the above-described circumstances, and by obtaining performance information of a photomask that reflects all factors such as factors caused by an optical system of an exposure machine, spectral characteristics of a light source, and development characteristics of a resist, manufacturing of a desired electronic device is achieved. It aims at providing the acquisition method of the photomask information, the quality display method of a photomask, the manufacturing support method of an electronic device, the manufacturing method of an electronic device, and a photomask product which enable it.

Furthermore, when a mask user who wants to manufacture an electronic device performs exposure of a photomask using an exposure machine, in order to form a desired resist pattern in the resist film on a to-be-transferred body, the exposure conditions of the exposure machine actually used by the said photomask are carried out. It is necessary to know the characteristics of the photomask exhibited under the following conditions. When the characteristics of the photomask exerted under the exposure conditions to be actually applied are provided as photomask information in association with a photomask as a product, it is extremely useful in the manufacture of electronic devices. From this point of view, the present inventors found the following points. With the above photomask information, for example, the mask user can stably produce a desired resist pattern using his exposure machine, or how the fluctuation factor when exposing using his exposure machine is exposed. By controlling, it is possible to grasp whether it is easy to obtain a desired resist pattern, and furthermore, to grasp in advance the defect which is easy to occur by exposure, to examine the change of the preset exposure conditions, or to process other than exposure (for example, resist). It is possible to examine the conditions for eliminating the defect in the developing step and the like.

However, since the mask maker which manufactures a photomask does not hold the exposure machine which a mask user uses, it is not easy for a mask maker to grasp | ascertain the mask characteristic desired by a mask user, and to provide it to a mask user.

MEANS TO SOLVE THE PROBLEM In order to solve the above-mentioned subject and achieve the said objective, this invention has one of the following structures.

<Configuration 1>

The method for acquiring photomask information according to the present invention uses a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion to a resist film formed on a layer to be processed for etching. A method of acquiring photomask information for performing exposure under exposure conditions and acquiring information about the photomask used for forming the resist film into a resist pattern having different portions of the resist remaining film amount used as a mask in the etching process. The exposure mask is exposed to the photomask or the test mask approximated to the photomask using exposure conditions close to a predetermined exposure condition, the transmitted light pattern of the photomask or the test mask is acquired by an imaging means, and the obtained transmitted light pattern is obtained. Contains transmitted light pattern data based on Generating photomask information, and mapping the photomask information to the photomask.

<Configuration 2>

The method for acquiring photomask information having the configuration 1 is characterized in that the processed layer is used for manufacturing a liquid crystal display device.

<Configuration 3>

In the method for acquiring photomask information having the configuration 1, the semi-transmissive portion is a portion in which a translucent film having a predetermined transmittance of less than 100% is formed on the transparent substrate when the exposure light transmittance of the transmissive portion is 100%. It is characterized by having.

<Configuration 4>

The method for acquiring photomask information having the configuration 1 is characterized in that the semi-transmissive portion has a portion formed with a fine light shielding pattern having a dimension below the resolution limit under the predetermined exposure condition on a transparent substrate.

<Configuration 5>

The method for acquiring photomask information having the configuration 3 or 4, wherein the photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in exposure conditions.

<Configuration 6>

In the method for acquiring photomask information having the configuration 3, the photomask has a translucent film on the translucent portion, and the photomask information has an exposure light transmittance of the translucent portion to a change in the film thickness or film quality of the translucent film. It is characterized by including the information on the tendency of change.

<Configuration 7>

The method for acquiring photomask information having the configuration 3 or 4, wherein the photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in the pattern line width.

<Configuration 8>

The quality display method of the photomask according to the present invention is a predetermined method using a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion with respect to a resist film formed on a layer to be processed which is subjected to etching. A photomask quality display method for displaying the quality of a corresponding photomask which is subjected to exposure under exposure conditions and forms the resist film in a resist pattern having different portions of the resist remaining film amount used as a mask in the etching process. Exposure is performed on the photomask or the test mask, which is close to the photomask, using an exposure condition that is close to the exposure condition, and the transmitted light pattern of the photomask or the test mask is obtained by an imaging means, Including transmitted light pattern data based on And a step of generating photomask information and a step of associating the photomask information with the photomask.

<Configuration 9>

In the quality display method of the photomask which has the structure 8, the said to-be-processed layer is used for manufacture of a liquid crystal display device.

<Configuration 10>

In the quality display method of the photomask which has the structure 8, when the said transflective part makes the exposure light transmittance of the said translucent part 100%, the part which formed the transflective film which has a predetermined transmittance | permeability of less than 100% on the transparent substrate. It is characterized by having.

<Configuration 11>

In the quality display method of the photomask which has the structure 8, the said transflective part has a part which formed the fine light shielding pattern of the dimension below the resolution limit under the said predetermined exposure condition on the transparent substrate.

<Configuration 12>

In the quality display method of the photomask which has the structure 10 or 11, the said photomask information is characterized by including the information regarding the change tendency of the exposure light transmittance of the said semi-transmissive part with respect to the change of exposure conditions.

<Configuration 13>

In the quality display method of the photomask having the configuration 10, the photomask has a translucent film in the translucent portion, the photomask information is exposed light of the translucent portion to the change in the film thickness or film quality of the translucent film It is characterized by including information on the tendency of the change in transmittance.

<Configuration 14>

In the quality display method of the photomask which has the structure 10 or 11, the said photomask information is characterized by including the information regarding the change tendency of the exposure light transmittance of the said semi-transmissive part with respect to the change of the pattern line width.

<Configuration 15>

The manufacturing support method for an electronic device according to the present invention uses a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion, to a resist film formed on a layer to be processed for etching. A manufacturing support method of an electronic device for supporting the manufacture of an electronic device, comprising the step of performing exposure under exposure conditions and forming the resist film into a resist pattern having a different amount of resist residual film serving as a mask in the etching process. Exposure is performed on the photomask or the test mask, which is close to the photomask, using an exposure condition that is close to the exposure condition of the photomask. Based on the transmitted light pattern data And a step of generating photomask information and a step of associating the photomask information with the photomask.

<Configuration 16>

A manufacturing support method for an electronic device having the configuration 15, wherein the electronic device is a liquid crystal display device.

<Configuration 17>

In the manufacturing support method for an electronic device having the configuration 15, the semi-transmissive portion is a portion in which a translucent film having a predetermined transmittance of less than 100% is formed on the transparent substrate when the exposure light transmittance of the translucent portion is 100%. It is characterized by having.

<Configuration 18>

The manufacturing support method for an electronic device having the configuration 15, wherein the semi-transmissive portion has a portion formed with a fine light shielding pattern having a dimension below the resolution limit under the predetermined exposure condition on a transparent substrate.

<Configuration 19>

The manufacturing method of the electronic device which concerns on this invention uses predetermined | prescribed exposure using the photomask which has a predetermined transfer pattern which consists of a light shielding part, a light transmitting part, and a semi-transmissive part with respect to the resist film formed on the to-be-processed layer to which an etching process is performed. In the manufacturing method of an electronic device containing exposure under the conditions and forming the said resist film into the resist pattern which has a site | part from which the residual amount of resist film used as a mask in the said etching process differs, The acquisition method of the said structure 1 And determining an exposure condition based on the photomask information, and performing exposure to the photomask under the determined exposure condition.

<Configuration 20>

In the method for manufacturing an electronic device having the configuration 19, the development conditions of the resist film or the etching conditions in the etching processing are determined based on the photomask information.

<Configuration 21>

A photomask product comprising the photomask information by the acquisition method according to the above-described structure 1 and the photomask.

In the method for acquiring photomask information according to the present invention, a photo exposure method using an exposure condition close to a predetermined exposure condition (that is, using exposure means capable of reproducing an exposure condition that simulates an exposure condition of an exposure apparatus actually used) Since the exposure is performed on the mask, the transmitted light pattern of the photomask is acquired by the imaging means, the transmitted light pattern data is obtained based on the obtained transmitted light pattern, and photomask information including the transmitted light pattern data is generated. The mask information makes it possible to determine photomask exposure conditions and processing conditions of the transfer target, which reflect all factors such as factors caused by the optical system of the exposure machine, spectral characteristics of the light source, and development characteristics of the resist.

At this time, you may use the test mask manufactured similarly to the photomask actually used for exposure.

This photomask information acquisition method can be applied to a photomask used for electronic device manufacture. Moreover, it is especially useful when it is a liquid crystal display device as this electronic device. In the present invention, the semi-transmissive portion may be any of a semi-transmissive film formed on a transparent substrate and a fine light-shielding pattern having a dimension below the resolution limit under exposure conditions on the transparent substrate.

In addition, in this invention, photomask information can be made to contain the threshold value of the permissible range with respect to the transmittance | permeability of the translucent part of a photomask.

In the quality display method of the photomask according to the present invention, the photomask is exposed to light using a predetermined exposure condition and an exposure condition approximated, the transmitted light pattern of the photomask is acquired by the imaging means, and based on the obtained transmitted light pattern And a process of generating photomask information including transmitted light pattern data and a process of associating the photomask information with a photomask corresponding to the photomask information. It is possible to determine the exposure conditions of the photomask and the processing conditions of the transfer target, reflecting all factors such as the spectral characteristics of the light source and the development characteristics of the resist.

The quality display method of this photomask can be applied to the photomask used for electronic device manufacture. Moreover, as this electronic device, it can be set as a liquid crystal display device. In the present invention, the semi-transmissive portion may be either one in which a semi-transmissive film is formed on a transparent substrate, or a fine light shielding pattern having a dimension below the resolution limit under exposure conditions on the transparent substrate. In addition, in this invention, photomask information can be made to contain the threshold value of the permissible range with respect to the transmittance | permeability of the translucent part of a photomask.

In the manufacturing support method for an electronic device according to the present invention, an exposure is performed on a photomask (or a test mask approximated thereto) using predetermined exposure conditions and exposure conditions approximated, and the transmitted light pattern of the photomask is acquired by the imaging means. And a step of generating photomask information including the transmitted light pattern data based on the obtained transmitted light pattern, and a step of mapping the photomask information to a photomask corresponding to the photomask information. By using it for manufacture of an electronic device, it becomes possible to determine the exposure conditions of the photomask and the processing conditions of a to-be-transferred body which reflect all the factors, such as the factor by the optical system of an exposure machine, the spectral characteristic of a light source, and the developing characteristic of a resist. And the conditions at the time of electronic device manufacture can be determined quickly, and the production conditions with high manufacturing yield can be achieved.

The manufacturing support method of this electronic device can be assumed to be a liquid crystal display device as an applied electronic device. In the present invention, the semi-transmissive portion may be either one in which a semi-transmissive film is formed on a transparent substrate, or a fine light shielding pattern having a dimension below the resolution limit under exposure conditions on the transparent substrate. In addition, in this invention, photomask information can be made to contain the threshold value of the permissible range with respect to the transmittance | permeability of the translucent part of a photomask.

In the method for manufacturing an electronic device according to the present invention, since the electronic device is manufactured based on the photomask information acquired by the photomask information acquisition method according to the present invention, the factors caused by the optical system of the exposure machine, the spectral characteristics of the light source, The exposure conditions of the photomask and the processing conditions of the transfer target body reflecting all the factors such as the development characteristics of the resist are determined to enable the manufacture of electronic devices with high efficiency and high production yield.

In the electronic device manufacturing method, the exposure conditions of the photomask, the development conditions of the resist film, or the etching conditions in the etching process are determined based on the photomask information. The electronic device which reflects all the factors, such as a spectral characteristic and the developing characteristic of a resist, becomes possible.

Moreover, by using the photomask product of this invention for manufacture of an electronic device, the exposure condition which reflects all the factors, such as the factor by the optical system of an exposure machine, the spectral characteristic of a light source, becomes possible. Furthermore, it is possible to select or determine the processing (development, etching) conditions of the transfer object, contributing to production yield and production efficiency.

EMBODIMENT OF THE INVENTION Hereinafter, the best embodiment for implementing this invention is demonstrated.

[Summary of Acquisition Method of Photomask Information According to the Present Invention]

In the method for acquiring photomask information according to the present invention, exposure is performed by exposure in an exposure apparatus by exposing an object to be transferred using an exposure apparatus using a photomask on which a predetermined transfer pattern is formed on a transparent substrate. It is a method of acquiring photomask information which can be predicted from the light intensity distribution of the mask transmitted light which captured the pattern actually transferred to a dead body by the imaging means. Here, the object to be transferred means that a desired film is formed on a glass substrate or the like and is coated with a resist film.

The photomask information of the present invention may be accommodated in a medium, and the medium is not limited as long as the medium is an information recording medium including an electronic recording medium such as paper or a memory.

More specifically, the exposure conditions close to the exposure conditions in the exposure apparatus are created, thereby exposing the photomask or the test mask close thereto, and obtaining photomask information including data obtained from the transmitted light pattern. The photomask information is associated with the photomask.

The correspondence here may include a method of including the mapping information with the photomask in the photomask information, or displaying the mapping information with the photomask information in the photomask.

An approximation of an exposure condition is an approximation of an exposure wavelength, for example. When exposure light has a wavelength range, it can be set as the exposure wavelength with the largest light intensity being the same. More preferably, exposure conditions having the same wavelength region as the actual exposure wavelength can be selected. In addition, the approximation of exposure conditions includes the thing which approximates an optical system. For example, the NA (the number of openings) of the imaging system is about the same, or σ (coherence) is about the same.

Here, the NA is approximately the same as the case where NA ± 0.005 of the optical system applied to obtain photomask information with respect to the NA of the actual exposure machine. The fact that sigma is approximately equal is exemplified in the range of ± 0.05 with respect to sigma of the actual exposure machine. In addition, it is preferable that not only an imaging system but also the NA of an illumination system are substantially the same. Moreover, the exposure conditions provided with the optical system in which the NA of an imaging system is substantially the same, and whose (sigma) is substantially the same are applicable.

In the present invention, the transmitted light pattern data of the photomask under the exposure conditions close to the actual exposure conditions is obtained, but the approximate exposure conditions may be any one of the exposure wavelength and the exposure optical system. More preferably, both an exposure wavelength and an exposure optical system are approximated.

Or it is also possible to set it as the photomask information containing each transmitted light pattern data containing the conditions closest to actual exposure, and applying several different conditions. For example, the transmitted light pattern data when the exposure light intensity and the spectral characteristics are changed may be included in the photomask information together with the conditions close to the above exposure.

In the present invention, the test mask, which is close to the photomask, is made of the same material as the photomask (the material or the film thickness of the transparent substrate or the translucent film), and the transfer pattern included in the photomask. It may be made to include a pattern close to the. For example, when the photomask includes the transfer pattern of the semi-transmissive portion fitted to the light blocking portion corresponding to the channel portion of the TFT, a test mask including the transfer pattern of the same shape and the same line width is included in this. Yes.

In addition, with respect to the semi-transmissive film used in the translucent portion of the photomask, a plurality of changes in transmittance when the film thickness and the film quality (composition) are changed can be measured, and the information can be included as part of the photomask information. .

Further, the pattern line width may be changed by a predetermined rule with respect to the pattern of the photomask, the change in transmittance at that time may be measured, and the information may be included as part of the photomask information. If the photomask information is a photomask using a fine pattern in the semi-transmissive portion, it is useful to grasp the change in transmittance caused by the change as the line width of the fine pattern. Such photomask information, on the other hand, is useful for grasping a change in transmittance due to a change in the line width of the semi-transmissive portion itself, as long as it is a photomask using a semi-transmissive portion.

Examples of test masks applicable to the present invention will be described later.

In the photomask of the present invention, the semi-transmissive portion is a portion that transmits part of the exposure light. The part is formed by forming a semi-transmissive film on a transparent substrate, or forming a fine pattern having a dimension below the resolution limit by a light-shielding film under exposure conditions, or further forming the fine pattern by a translucent film. Etc. are included. This part also includes the case where the light transmitting portion having a dimension below the resolution limit sandwiched between the light blocking portions functions as a semi-light transmitting portion.

In the present invention, the transmittance pattern data means data formed on the basis of the transmitted light pattern obtained by the imaging means, or data formed by adding other information to the obtained transmitted light pattern.

The transmittance pattern data may be, for example, data relating to a change in the amount of exposure of the exposure light to a change in the size of the semi-transmissive portion area (the width of the semi-transmissive portion sandwiched between the light shielding portions, etc.), or a change in the amount of light or wavelength of the exposure light. May be data relating to a change in the amount of transmission of exposure light. The transmittance pattern data may further be data obtained by adding processing conditions (developing conditions, etc.) of the resist when actually forming a resist pattern using a photomask.

The transmittance pattern data may be shown in the graph of FIG. 1, for example, as described later.

In the present invention, as described above, under the exposure conditions actually applied to the exposure of the photomask, the ratio of the transmitted light in the translucent portion to the transmitted light in the transmissive portion is referred to as the effective transmittance. In the semi-transmissive portion, when there is a distribution of effective transmittances, the peak value is set as effective transmittance for convenience. This value is correlated with the resist residual film value of the part of the resist pattern formed on the transfer object using the mask.

The semi-transmissive portion is a portion having an effective transmittance (greater than zero) smaller than that when the transmittance of the exposure light passing through the transmissive portion under the exposure conditions is 100%.

The semi-transmissive portion preferably has an effective transmittance of 20 to 60%. As a result, a resist remaining film having a thickness different from that of the light transmitting portion or the light shielding portion is provided to the resist pattern.

Here, the inherent transmittance of the film is the inherent transmittance of the film formed on the transparent substrate, and the amount of transmitted light with respect to the incident amount of the exposure light on the film-forming surface of a large enough area with respect to the wavelength of the exposure light and the optical conditions of the exposure machine. It is defined as That is, in terms of the film formation of an area large enough so that the wavelength of the exposure light and the optical conditions of the exposure machine (such as an illumination system, NA of the imaging system, σ, etc.) do not affect the light transmittance, the intrinsic transmittance and the effective transmittance under the exposure conditions are equal. Become.

On the other hand, for example, if the area of the translucent portion on which the film is formed is small, it is influenced by other portions (shielding portion and transmissive portion) adjacent to the translucent portion, and the effective transmittance with respect to the exposure light under the exposure conditions is determined by the inherent transmittance of the film. Is different.

And in the photomask information acquired by this invention, based on the light intensity distribution of the transmission pattern of the mask obtained by the imaging means under optical conditions close to an actual exposure machine, the resist pattern on a to-be-transferred body or its resist pattern is Various analysis and evaluation can be performed by predicting the finishing value of the dimension of the to-be-processed layer pattern processed with the mask, the shape change by the change of the transmittance | permeability of a photomask, etc.

In particular, in the present invention, based on the effective transmittance at the center of the semi-transmissive portion region sandwiched between the edges of the pair of parallel shielding portions, the pair of parallel shielding portions in the resist pattern obtained by exposure of the mask. The shape corresponding to the area sandwiched between the edges, and the predetermined transmittance threshold interval or residual film value corresponding to the edges of the pair of parallel light shielding portions can be estimated, whereby the exposure conditions can be determined. Moreover, this photomask information can also be used in order to determine the conditions of image development and the etching with respect to the to-be-transferred transfer object.

1 is a graph showing an effective transmittance and a change in the center of a translucent portion sandwiched between edges of a pair of parallel shielding portions. As shown in FIG. 1, when the width | variety of the semi-transmissive part HP pinched | interposed between the edge of a pair of parallel light shielding parts SP1 and SP2 is narrowed, the effective transmittance will become low. On the contrary, when the width of the semi-transmissive portion HP sandwiched between the edges of the pair of parallel light-shielding portions SP1 and SP2 is widened, the effective transmittance is increased. Therefore, in the test exposure to the photomask, when the effective transmittance of the semi-transmissive portion is higher than the desired transmittance, it is possible to correct the narrowing of the width (distance between a pair of parallel light-shielding portions). In contrast, in test exposure to a photomask, when the effective transmittance of the semi-transmissive portion is lower than the desired transmittance, correction may be made to widen the width of the semi-transmissive portion (the distance between the pair of parallel light-shielding portions). On the other hand, when there is an in-plane deviation of the line width of the semi-transmissive portion with respect to a predetermined photomask, referring to FIG. 1, it is possible to know beforehand the actual range within which the variation in the execution transmittance is due to the variation in the line width. In addition, the relationship between the width of the semi-transmissive portion and the effective transmittance is changed depending on the exposure conditions, as shown in FIG. 1. Therefore, the mask user can estimate the resist residual film formed with respect to the change of exposure conditions before exposure. Here, since the effective transmittance changes when the film design (film thickness of the semi-transmissive film, crystal of the film material) of the semi-transmissive film type gray tone mask is changed, the correlation between the film design and the effective transmittance is determined. Can be included in

In addition, the photomask information acquired by this photomask information acquisition method includes not only the photomask which is a final product but also the information about the intermediate in the process of manufacturing a photomask. In addition, the photomask includes not only a gray tone mask using a translucent film but also a gray tone mask using a fine pattern.

The photomask of the present invention can be produced as follows. That is, the photomask blank which laminated | stacked the translucent film and the light shielding film in this order on the transparent substrate is prepared. A resist pattern of a region corresponding to the light shielding portion and the semi-transmissive portion is formed on the photomask blank, and the exposed light shielding film is etched using the resist pattern as a mask. The transmissive portion is formed by etching the exposed semitransmissive film using the resist pattern or the light shielding film as a mask. Next, a resist pattern is formed in the area | region containing the site which wants to be a light shielding part at least, and a semi-transmissive part and a light shielding part are formed by etching the exposed light shielding film using the resist pattern as a mask. In this way, the photomask which provided the semi-transmissive part by a semi-transmissive film, the light-shielding part by the laminated film of a semi-transmissive film, and a light shielding film, and a transmissive part on a transparent substrate is obtained.

In addition, the photomask of the present invention may be manufactured as follows. That is, the photomask blank in which the light shielding film was formed on the transparent substrate is prepared. A resist pattern in a region corresponding to the light shielding portion is formed on the photomask blank, and the light shielding film pattern is formed by etching the exposed light shielding film using the resist pattern as a mask. Next, after removing a resist pattern, a translucent film is formed into the whole surface of a board | substrate. Then, a resist pattern is formed in a region corresponding to the translucent portion (or the translucent portion and the light shielding portion), and the translucent portion and the translucent portion are formed by etching the exposed translucent film using the resist pattern as a mask. In this way, the photomask which provided the semi-transmissive part, the light-shielding part by the laminated | multilayer film of a light shielding film, and a translucent film, and a light transmissive part on a transparent substrate can be obtained.

In addition, the photomask of the present invention may be manufactured as follows. That is, a resist pattern of a region corresponding to the light blocking portion and the light transmitting portion is formed on the photomask blank on which the light shielding film is formed on the transparent substrate, and the exposed light shielding film is etched using the resist pattern as a mask, thereby Expose the transparent substrate. Next, after removing the resist pattern, a semi-transmissive film is formed on the entire surface of the substrate, and a resist pattern is formed in a region corresponding to the light shielding portion and the semi-transmissive portion, and the semi-transmissive film (semi-exposed) is exposed using the resist pattern as a mask. The light transmitting portion, the light blocking portion, and the semi-transmissive portion may be formed by etching the light transmitting film and the light blocking film.

In addition, as mentioned above, you may make it the gray tone mask which has the semi-transmissive part which adjusted the transmittance | permeability with the fine pattern of a light shielding film.

In the present invention, the quality display means attaching the photomask information as accessory information of the photomask, or performing transmission or posting by communication means in a state in which the photomask and the photomask information are associated. It includes. The communication means may be by a communication line or may be by a physical medium.

[Configuration of Information Acquisition Means Used in the Present Invention]

In this method of acquiring photomask information, as shown in FIG. 2, an inspection apparatus can be used. In this inspection apparatus, the photomask 3 is held by the mask holding portion 3a. The mask holder 3a supports the lower end and the side edges of the photomask 3 while the main plane of the photomask 3 is approximately vertical, and inclines and holds the photomask 3 to hold it. It is. This mask holding part 3a is a photomask 3, and is large (for example, 1220 mm x 1400 mm in thickness and 13 mm in thickness), and can hold the photomask 3 of various sizes. It is supposed to be. That is, since this mask holding part 3a mainly supports the lower end of the photomask 3 in the state where the main plane is substantially perpendicular, even if the size of the photomask 3 is different, the photo is supported by the same support member. The lower end of the mask 3 can be supported.

Here, the term "normally vertical" preferably indicates that the angle from the vertical indicated by θ in FIG. 2 is about 10 degrees or less, furthermore, the angle is 2 to 10 degrees from the vertical, and more preferably 4 to 10 degrees from the vertical. It means.

In this way, by using the mask holding portion 3a for tilting and supporting the photomask 3, the photomask 3 is prevented from being conducted in the process of holding the photomask 3, and thus the photomask 3 ) Can be stably held. In addition, if the photomask 3 is kept in the vertical position, the total weight of the photomask 3 is concentrated at the lower end portion, thereby increasing the possibility of damaging the photomask 3. By using the mask holding | maintenance part 3a which inclines and supports the photomask 3, the weight of the photomask 3 can be disperse | distributed to a some support point, and the damage of the photomask 3 can be prevented.

In this manner, in this inspection apparatus, the photomask 3 is held by the main plane of the photomask 3 as described above, so that an increase in the installation area of the inspection apparatus is suppressed and particles fall on the photomask. Can be suppressed.

And this inspection apparatus has the light source 1 which emits the light beam of a predetermined wavelength. As this light source 1, a halogen lamp, a metal halogen lamp, a UHP lamp (ultra high pressure mercury lamp), etc. can be used, for example.

And this inspection apparatus has the illumination optical system 2 which guide | induces inspection light from the light source 1, and irradiates inspection light to the photomask 3 hold | maintained by the mask holding | maintenance part 3a. Since the illumination optical system 2 makes the numerical aperture NA variable, the illumination optical system 2 is provided with the aperture stop mechanism 2-1. Moreover, it is preferable that this illumination optical system 2 is equipped with the visual field stop 2-2 for adjusting the irradiation range of the inspection light by the photomask 3. The inspection light which passed this illumination optical system 2 is irradiated to the photomask 3 hold | maintained by the mask holding part 3a.

The inspection light irradiated to the photomask 3 passes through the photomask 3 and enters the objective lens system 4. The objective lens system 4 is provided with the aperture stop mechanism 4-1 so that the numerical aperture NA is variable. The objective lens system 4 includes, for example, a first group (simulator lens) 4a to which the inspection light transmitted through the photomask 3 is incident, and the light beam is subjected to infinity correction to be parallel light. It can be set as the 2nd group (imaging lens) 4b which forms the light beam which passed through the 1st group.

In this inspection apparatus, since the numerical aperture of the illumination optical system 2 and the numerical aperture of the objective lens system 4 are respectively variable, the ratio of the numerical aperture of the objective optical system 2 to the numerical aperture of the objective lens system 4, namely, The sigma value (σ: coherence) can be made variable. Coherence σ is the ratio of the numerical aperture of the illumination optical system 2 to the numerical aperture of the objective lens system 4.

The light beam passing through the objective lens system 4 is received by the imaging unit (imaging means) 5. This imaging section 5 captures an image of the photomask 3. As this imaging part 5, imaging elements, such as CCD, can be used, for example.

And this inspection apparatus is provided with the control part (not shown) and the display part (not shown) which perform image processing, calculation, comparison with a predetermined threshold value, and display with respect to the picked-up image obtained by the imaging part 5, and so on. .

Moreover, in this inspection apparatus, a predetermined calculation is performed by the control part with respect to the picked-up image obtained using the predetermined exposure light, or the light intensity distribution obtained based on this, and picked-up image under the conditions using other exposure light, or light intensity. The distribution can be obtained. For example, in this inspection apparatus, when the light intensity distribution is obtained under exposure conditions in which g-rays, h-rays, and i-rays have the same light intensity ratio, g-rays, h-rays, and i-rays have a light intensity ratio of 1: 2: 1. The light intensity distribution in the case of exposing on exposure conditions can be calculated | required. As a result, in this inspection apparatus, the exposure conditions in the exposure apparatus actually used include the variation in the light intensity for each wavelength caused by the type of the illumination light source used for the exposure apparatus, the individual difference, and the aging change in the illumination used in the exposure apparatus. It is possible to perform the evaluation reproduced. In addition, in this inspection apparatus, when assuming the remaining film amount of a desired photoresist, it is possible to simply obtain the optimum exposure conditions which can achieve this.

In the method for acquiring photomask information according to the present invention performed by using the inspection apparatus, the illumination optical system 2, the objective lens system 4, and the imaging unit 5 have a photomask held with the main plane substantially vertical ( It is arrange | positioned in the position which opposes 3) in between, and irradiates and receives a test | inspection light in the state which made both optical axes coincide. These illumination optical system 2, the objective lens system 4, and the imaging part 5 are supported by the movement operation part (not shown) so that a movement operation is possible. This moving operation part can move the illumination optical system 2, the objective lens system 4, and the imaging part 5 in parallel with respect to the main plane of the photomask 3, making each optical axis coincide with each other. In this inspection apparatus, since such a moving operation part is provided, even when a large photomask is to be inspected, the main mask front surface of the photomask 3 is not moved in a direction parallel to the main plane. Examination over is possible, and also selective examination of the desired area on the main plane.

In this inspection apparatus, the objective lens system 4 and the imaging section 5 are movable in the optical axis direction, respectively, by the control unit and the driving mechanism, and these objective lens systems 4 and the imaging section 5 are operated. The relative distances to the photomask 3 can be changed independently of each other. In this inspection apparatus, the objective lens system 4 and the imaging section 5 can be moved independently in the optical axis direction, whereby imaging can be performed in a state close to the exposure apparatus that performs exposure using the photomask 3. . In addition, it is also possible to offset the focus of the objective lens system 4 and to capture an image of the photomask 3 by the imaging unit 5.

And the control part of this inspection apparatus is a visual field stop 2-2 and the aperture stop mechanism 2-1 of the illumination optical system 2, the aperture stop mechanism 4-1 of the objective lens system 4, a drive mechanism, and a movement. Control the control panel. In the method of acquiring photomask information using this inspection apparatus, the control unit has a numerical aperture NA of the objective lens system 4 and coherence σ (aperture of the objective lens system 4 of the numerical aperture of the illumination optical system 2). In the state in which the illumination optical system 2, the objective lens system 4, and the imaging section 5 are aligned with their optical axes, while the moving operation unit keeps the ratio of the number) to a predetermined value. While moving in a direction parallel to the main plane of the photomask 3 held by 3a), the objective lens system 4 and the imaging section 5 are moved independently of each other in the optical axis direction.

[Photomask Targeted by the Present Invention]

The photomask targeted by the method for acquiring photomask information according to the present invention includes not only the finished photomask as a product, but also an intermediate in the process of manufacturing the photomask, and is particularly limited to the kind and use of the photomask. There is no.

In other words, it is possible to inspect a gray tone mask having a light shielding portion, a light transmitting portion, and a semi-light transmitting portion (gray tone portion) on the main surface of the transparent substrate.

In addition, the gray tone part includes both the translucent part in which the semi-transmissive film was formed, and what set it as a gray tone part by the fine pattern below the resolution limit in exposure conditions. That is, the gray tone mask includes a photomask (semi-transmissive film type gray tone mask) having a gray tone portion in which a translucent film is formed in which the amount of transmitted light of the exposure light is less than 100% (for example, 40 to 60%), and the exposure is performed. All of the photomasks (fine pattern type gray tone masks) which have a gray tone part which reduces the amount of transmitted light by having light-shielding or semi-transmissive fine pattern below the resolution limit under conditions are included.

[Graytone Mask]

Here, the gray tone mask which becomes an inspection object in the inspection apparatus of the photomask which concerns on this invention is demonstrated.

Liquid crystal display devices with TFTs, that is, TFT-LCDs, have become widely used now because of the advantages of being thinner and having lower power consumption compared to cathode ray tubes (CRT). The TFT-LCD has a TFT substrate having a structure in which TFTs are arranged in pixels arranged in a matrix, and a color filter in which pixel patterns of red (R), green (G), and blue (B) are arranged corresponding to each pixel. It has a structure superimposed via a liquid crystal layer. Such TFT-LCDs have a large number of manufacturing processes, and have been manufactured using only 5 to 6 photomasks using a TFT substrate alone.

Under these circumstances, a method of manufacturing a TFT substrate using four photomasks has been proposed. This method reduces the number of masks used by using the gray tone mask which has a light shielding part, a light transmission part, and a gray tone part. 3 and 4 show an example of a manufacturing process of a TFT substrate using a gray tone mask.

First, as shown in FIG. 3A, a metal film for a gate electrode is formed on the glass substrate 201, and a gate electrode 202 is formed by a photolithography process using a photomask. Thereafter, the gate insulating film 203, the first semiconductor film (a-Si) 204, the second semiconductor film (N + a-Si) 205, the source / drain metal film 206, and the positive type photo The resist film 207 is formed in order.

Next, as shown in FIG. 3B, the positive photoresist film 207 is formed by using the gray tone mask 100 having the light shielding portion 101, the light transmitting portion 102, and the gray tone portion 103. Is exposed and developed to form the first resist pattern 207A. This first resist pattern 207A covers the TFT channel portion, the source / drain formation region and the data line formation region, and the TFT channel portion formation region is thinner than the source / drain formation region.

Next, as shown in FIG. 3C, the source / drain metal film 206 and the second and first semiconductor films 205 and 204 are etched using the first resist pattern 207A as a mask.

Next, as shown in Fig. 4A, the resist film 207 is reduced as a whole by ashing with oxygen to remove the thin resist film in the channel portion forming region, thereby forming the second resist pattern 207B. . Thereafter, as shown in FIG. 4B, the source / drain metal film 206 is etched using the second resist pattern 207B as a mask to form the source / drain 206A, 206B. 2 The semiconductor film 205 is etched. Finally, as shown in Fig. 4C, the remaining second resist pattern 207B is peeled off.

As shown in FIG. 5, the gray tone mask 100 used here includes the light blocking portions 101A and 101B corresponding to the source / drain, the light transmitting portion 102 and the gray tone portion 103 corresponding to the TFT channel portion. Have This gray tone part 103 is an area | region in which the light shielding pattern 103A which consists of a fine pattern below a resolution limit is formed under the exposure conditions of the large-scale LCD exposure apparatus which uses the gray tone mask 100. FIG. Usually, the light shielding portions 101A and 101B and the light shielding pattern 103A are all formed of a film having the same thickness made of the same material such as chromium or a chromium compound. The resolution limit of a large LCD exposure apparatus using such a gray tone mask is about 3 m in a stepper type exposure apparatus and about 4 m in a mirror projection type exposure apparatus. For this reason, in the gray tone part 103, each of the space width of the transmission part 103B and the line width of the light shielding pattern 103A is set to less than 3 micrometers which is below the resolution limit under the exposure conditions of an exposure apparatus.

In the design of the fine pattern type gray tone part 103, whether the fine pattern for giving the intermediate translucent (gray tone) effect between the light shielding parts 101A and 101B and the light transmitting part 102 is a line and space type. Is a dot or dot pattern or other pattern. In the case of the line-and-space type, it is possible to appropriately design how much the line width is to be set, the ratio of the part to which light is transmitted and the part to be shielded, and how much the overall transmittance is to be designed.

The semi-transmissive film type gray tone mask can be manufactured as follows, for example. Here, as an example, the pattern of a TFT substrate is taken as an example and demonstrated. As illustrated in FIG. 3B, the pattern includes a light shielding portion 101 formed of a pattern corresponding to a source and a drain of a TFT substrate, and a gray tone portion 103 formed of a pattern corresponding to a channel portion of a TFT substrate. And a light transmitting portion 102 formed around these patterns.

First, a mask blank in which a translucent film and a light shielding film are sequentially formed on a transparent substrate is prepared, and a resist film is formed on this mask blank. Next, pattern drawing is performed to develop a resist pattern in a region corresponding to the light shielding portion and the gray tone portion of the pattern. Next, by etching by an appropriate method, the light shielding film in the region corresponding to the light transmitting portion where the resist pattern is not formed and the semitransparent film in the lower layer are removed to form a pattern.

In this way, the light transmitting portion 102 is formed, and at the same time, the light blocking pattern of the area corresponding to the light blocking portion 101 and the gray tone portion 103 of the pattern is formed. Then, after removing the remaining resist pattern, a resist film is again formed on the substrate, and pattern drawing is performed to develop the resist pattern in a region corresponding to the light shielding portion 101 of the pattern.

Next, only the light shielding film of the area | region of the gray tone part 103 in which the resist pattern was not formed is removed by appropriate etching. Thereby, the gray tone part 103 by the pattern of a translucent film is formed, and simultaneously, the pattern of the light shielding part 101 is formed.

[About information acquisition method of gray tone mask]

In order to acquire photomask information using the gray tone mask as described above, it is useful to obtain the transmitted light pattern data under conditions reflecting actual exposure conditions.

In the gray tone mask, the pattern shape formed on the mask affects the thickness of the resist film and the shape of the resist film formed on the transfer object by exposure using the mask. For example, it is necessary to evaluate not only the evaluation of the planar pattern shape, but also whether the light transmittance of the gray tone part is within an appropriate range, and whether the increase in the light transmittance (sharpness or peeling state) at the boundary between the gray tone part and the light shielding part.

In particular, in the case of a gray tone mask having a gray tone portion formed of a fine pattern, the fine pattern is not resolved when actually exposed using a photomask, and is used in a state of comparison compared to a degree that is regarded as a substantially uniform transmittance. It is necessary to inspect this state in the manufacturing process of a mask, or in the stage before shipment, and also the stage which carried out defect correction.

In the method for acquiring photomask information according to the present invention, the gray tone mask is used to selectively change the film thickness of the photoresist by reducing the amount of exposure light passing through the gray tone part and reducing the amount of irradiation to the photoresist in this area. The inspection can be performed with high precision close to the actual exposure conditions, and the pattern shape of the photoresist obtained by the actual exposure can be predicted with high accuracy.

For example, the transmitted light distribution of the transmitted light of a gray tone mask at the time of changing exposure conditions is shown in FIG.

The pattern shown in FIG. 6 shows a pattern composed of two light blocking portions (corresponding to a source and a drain in the TFT) and a semi-transmissive portion (corresponding to a channel portion) provided in the center portion adjacent thereto. Here, the central semi-transmissive portion is formed by a line width pattern (a fine light-transmitting portion, a fine light-shielding portion, and a fine light-transmitting portion arranged in the horizontal direction) below the retrofit limit of the exposure machine.

In addition, here, the transmitted light pattern is imaged using the optical system of four resolutions, and the resolution is low toward the right side, and the peak of the transmitted light pattern curve shown in the lower part of FIG. 6 is low. The density | concentration of this part shows the "effective transmittance | permeability" of this part when this gray tone mask is used, and the residual film amount of the resist film formed by a gray tone part is influenced by this. Of these four resolution conditions, it is closer to the actual exposure machine condition toward the right side.

Therefore, the transmitted light pattern data as shown in the lower part of FIG. 6 can grasp | correlate the correlation of the exposure condition applied to exposure of a gray tone mask, and the resist pattern shape on the to-be-transferred body obtained by it.

In addition, when a captured image is obtained in a comparative image state under the actual exposure conditions as described above, the sharpness of the boundary portion between the channel portion and the source / drain portion is evaluated through appropriate calculation as necessary, and the three-dimensional shape of the photoresist is estimated. It is also possible.

In this case, in Fig. 2, for example, a photomask 3 having a semi-transmissive portion formed of a fine pattern below the resolution limit is provided in the inspection apparatus, and the numerical aperture and coherence σ of the objective lens system 4, for example. By using a predetermined value close to the exposure machine actually used, the image of the comparative image state of the fine pattern is obtained on the imaging surface in the imaging section 5 as in the case of pattern transfer by the actual exposure. And the transmitted light pattern of a mask pattern can be obtained by processing the image data imaged by a calculating part. The transmitted light pattern data obtained from the transmitted light pattern can be part of the photomask information of the present invention. In addition, the photomask information may include threshold information of an allowable range for the transmittance of the transflective portion of the photomask.

[Test Mask]

The photomask information according to the present invention includes a semi-transmissive portion according to a change in exposure conditions (this has a correlation with the line width (CD) of the pattern) and a change in transmittance (dependent on the film thickness and film quality) inherent in the translucent film. The tendency to change the effective transmittance can be included. Such information can be expressed, for example, as in the graph of FIG. 13B. Here, the line width of a pattern is changed with respect to predetermined exposure conditions (exposure amount) and the transmittance | permeability peculiar to a translucent film, and the dependence of the effective transmittance is plotted about this. In Fig. 13B, the horizontal axis represents the line width of the channel portion (semi-transmissive portion), and the vertical axis represents the effective transmittance, respectively. In addition, T1: Ref represents the pattern data of an actual mask, and T1 + x% and T1 + y% respectively show the intrinsic transmittance | permeability of a film | membrane.

As described above, in order to include the change in the transmittance inherent in the translucent film used for the photomask and the change in the effective transmittance due to the pattern shape (line width, etc.) in the photomask information, a test as shown in FIG. It is possible to obtain light transmission pattern data using the mask 11. As a test mask similar to the photomask of this invention, the following can be used, for example.

This test mask 11 can grasp | ascertain the change of the effective transmittance by the change of a pattern shape. In the method of acquiring photomask information using the exposure means which mimics the above-mentioned exposure machine, it is for obtaining the transmitted light pattern by a plurality of pattern shapes accurately and quickly. In addition to this, or instead of this, the exposure test to the transfer target is performed using the test mask also for a condition including a factor that cannot be matched with the exposure machine such as the spectral sensitivity of the resist film or the spectral sensitivity characteristic of the imaging unit. By patterning the resist film, if the tendency of the resist pattern shape under a plurality of conditions is grasped, it can be included in the photomask information.

In this test mask 11, as shown to Fig.7 (a), the same test pattern 12 is matrix-shaped in the X-axis direction and the Y-axis direction, for example on the board | substrate of 800 mm x 920 mm. Are arranged. Each test pattern 12 is formed with unit patterns 13 arranged one by one in the X-axis direction and the Y-axis direction, as shown in FIG. You may arrange | position another test pattern etc. suitably in a surplus part. For example, in FIG.7 (b), the position reference mark PM is arrange | positioned at the periphery and the general resolution pattern PP is arrange | positioned at the center part.

In the test pattern of the present invention, the individual unit patterns 13 may be the same pattern, respectively. For example, as shown in FIG. 8, it is preferable to arrange different patterns, which are useful in the evaluation process described later. Here, an example is shown in which 21 unit patterns 13 (wedge patterns) are arranged in the X-axis direction and the shape is changed in 21 steps in the Y-axis direction in each unit pattern 13. That is, each unit pattern 13 is changed based on a predetermined rule in the X-axis direction and the Y-axis direction according to the arrangement order.

Each unit pattern 13 is formed of a light shielding film. The unit pattern 13 is sandwiched between a pair of light shielding portions 13-1 whose widths are changed in a step shape with respect to the Y-axis direction indicated by "a to u" in FIG. It is a pattern of the line and space in which the vertical line (light shielding line) by a light shielding film was arrange | positioned at the light part 13-2. In one unit pattern 13, the pair of light shielding portions 13-1 on both sides are the same in the X-axis direction shown by "1 to 21" in FIG. The line width of the light shielding line formed in (13-2) is tapered at a constant pitch toward "1-21" with respect to the X-axis direction.

In addition, the individual unit patterns 13 may be formed of a light shielding film and a translucent film. In this case, the unit pattern 13 is sandwiched between a pair of light shielding portions whose width is changed in a step shape to form a pattern in which a translucent film is formed. That is, the area | region in which the translucent film was formed turns into the area | region (semi-transmissive part) interposed between the edge of a pair of parallel light shielding parts.

By arranging such unit patterns 13, as shown in Fig. 8B, the transmittance of the gray tone portion sandwiched between the light shielding portions can be approximated to a mask gradually increasing. For example, in the gray tone mask for channel part formation in a thin film transistor, it can approximate to the aspect which gradually changed the light transmittance of a gray tone part.

On the other hand, in each unit pattern 13, the light shielding part line width of both sides gradually becomes small over "a-u" about the Y-axis direction. This can be approximated, for example, in a channel portion forming gray tone mask in a thin film transistor, as shown in FIG. 8B, in which the width of the channel portion gradually increases. In addition, it is preferable for the reason mentioned later to make the change pitch of a pair of light shielding part line width in each unit pattern 13 equal to the change pitch of the center light shielding line line width.

On the other hand, the unit pattern 13 arrange | positioned in this way makes it possible to evaluate the influence of the transcription | transfer to the to-be-transferred body by the line width (CD (Critical Dimension)) change of the said mask by observing and evaluating in a diagonal direction. For example, "a1, b2, c3,... The pattern is changed according to a certain rule. In this rule, the center light shielding line is tapered at a constant pitch, and the line widths of both light shielding portions are also tapered at a constant pitch. This can approximate the CD variation (the line width becomes a predetermined amount or the predetermined amount becomes small) of the photomask due to various factors such as printing during the photomask manufacturing process.

Therefore, when the acquisition method of the photomask information according to the present invention using such a test mask is performed, the correlation between the light intensity distribution obtained by the inspection apparatus and the resist pattern on the transfer object obtained by performing actual exposure using the same test mask is obtained. It can be grasped | ascertained in relationship with the change of each pattern shape.

As shown in FIG. 7B, the unit patterns 13 are arranged at an angle of 90 ° in the X-axis direction and the Y-axis direction in the test mask 11. This makes it possible to evaluate the factors of resolution unevenness of the pattern in the X-axis direction and the Y-axis direction which may occur in the manufacture of an electronic device, for example, a liquid crystal panel. For example, if there is a difference in resolution in the scanning direction of the exposure apparatus and in a direction perpendicular to this, the state of such a difference in resolution can be evaluated.

Here, as the unit pattern 13, as shown in FIG. 8A, the light-transmitting portion 13-2 sandwiched between the pair of light-shielding portions 13-1 whose width is changed in a step shape. Although the test mask 11 which has the line and space pattern (wedge pattern) which arrange | positioned the light shielding line by the light shielding film in the above was demonstrated, the test mask in this invention is not limited to this.

Different test patterns are illustrated in FIGS. 9 and 10. The unit pattern 13 'in the test pattern 12' shown in Fig. 9 is a square frame-shaped light-transmitting portion 13-2 'and a square frame-shaped light shielding portion formed in the light-transmitting portion 13-2'. It has (13-1 '), and can evaluate about four directions in one unit pattern 13'.

The unit pattern 13 "in the test pattern 12" shown in FIG. 10 is a square octagonal light projection 13-2 "and a square octagonal frame shape formed in this light projection 13-2". It has light shielding part 13-1 ", and can evaluate about 8 directions in one unit pattern 13".

In addition, as a different form, the purpose of reducing the transmissive film (a predetermined amount of transmittance with respect to the light transmitting portion) in a portion sandwiched between a pair of light blocking portions whose width is changed in the step shape of the test pattern of Fig. 8A. May be formed into a unit pattern. In this case, it becomes possible to evaluate the gray tone mask which has the gray tone part in which the translucent film was formed using this test mask. The gray tone mask for TFT manufacture which arrange | positioned the semi-transmissive film in the part corresponding to a channel part can be approximated.

Here, in the acquisition method of the photomask information which concerns on this invention, it is preferable to irradiate several times, changing exposure conditions, and to acquire the picked-up image of the test mask by each irradiation. By using the light intensity distribution data of the transmitted light of the test mask under a plurality of different conditions for comparison and comparison with the resist pattern by the actual exposure of the test mask, a lot of information can be obtained. For example, irradiation is performed while changing the numerical aperture NA by a predetermined amount, or irradiation is performed while changing the numerical aperture NA or coherence σ by predetermined amounts. The light intensity distribution data of the transmitted light thus obtained can be accumulated as a database. Part or all of this database can be used as photomask information.

[Spectral Characteristics of Inspection Light (1)]

By the way, as the light source 1 (FIG. 2) in this inspection apparatus, it is preferable to use what emits the inspection light which is the same as the exposure light in the exposure apparatus which actually exposes, or has substantially the same wavelength distribution.

Specifically, this inspection light contains at least one of g line (wavelength 436 nm), h line (wavelength 405 nm), or i line (wavelength 365 nm), as shown to Fig.11 (a). It can also be set as the mixed light in which all these wavelength components are included or arbitrary 2 or more of these wavelength components are mixed. In general, at the time of exposure of a large-sized mask for FPD production, since mixed light of these wavelengths is used as the exposure light, in this inspection apparatus, by applying the mixed light at a desired light intensity ratio, the conditions are close to the exposure conditions. can do.

And this inspection light is irradiated to the photomask 3 through the wavelength selection filter 6 (FIG. 2), such as an optical filter, and the mixing ratio of each wavelength component on the photomask 3 is adjusted. As this wavelength selection filter 6, as shown in FIG.11 (b), the filter which has the characteristic which cuts the luminous flux below predetermined wavelength or more than predetermined wavelength can be used.

In this inspection apparatus, the wavelength distribution of the inspection light generated from the light source 1 is the same as or substantially the same as the wavelength distribution of the exposure light in the exposure apparatus, so that the exposure conditions close to the actual exposure conditions can be made.

In addition, in this inspection apparatus, as a wavelength selection filter, as shown in FIG.11 (c), the 1st filter which has the characteristic which transmits mainly g line | wire generated only from the light source 1 (FIG. 2), and a light source ( A second filter having a characteristic of transmitting only the h line mainly generated from 1) and a third filter having a characteristic of transmitting only the i line mainly generated from the light source 1 can be selectively used.

In this case, the light intensity data dg obtained by the imaging section 5 (FIG. 2) when the first filter is used, the light intensity data dh obtained by the imaging section 5 when the second filter is used, When the third filter is used, the light intensity data di obtained by the imaging unit 5 are obtained, respectively.

Then, the respective light intensity data dg, dh, and di are given a predetermined weight to each of them, and then added, so that the luminous flux in which g-line, h-line, and i-line are mixed at a predetermined light intensity ratio is added to the photo mask 3. The light intensity data obtained when irradiated can be calculated.

The weighting of each light intensity data dg, dh, di is, for example, the light intensity ratio of g line, h line and i line in the light beam from the light source 1 of this inspection apparatus is [1.00: 1.20: 1.30]. It is assumed that the light intensity ratio of g line, h line and i line in the exposure light from the light source of the actual exposure apparatus was [1.00: 0.95: 1.15]. In this case, the coefficient fg to be multiplied by the light intensity data dg is 1.00, the coefficient fh to be multiplied by the light intensity data dh is 0.95 / 1.20 (= 0.79), and the coefficient fi to be multiplied by the light intensity data di is 1.15 / 1.30 (= 0.88).

The data obtained by adding these, that is, [fg × dg + fh × dh + fi × di] becomes data indicating the light intensity distribution obtained when the exposure apparatus irradiates the exposure mask with the exposure light. In addition, such a calculation can be performed by this control part using a control part as a calculation part. By this method, it is also possible to obtain the transmitted light pattern of the photomask under the exposure conditions close to the actual exposure conditions.

[Spectral Characteristics of Inspection Light (2)]

Even if the inspection light emitted from the light source 1 in this inspection apparatus has a wavelength distribution different from that of the exposure apparatus, the transmitted light pattern which approximates the exposure state in the exposure apparatus can be obtained as follows.

In this inspection apparatus, as described above, as the wavelength selective filter, a first filter having a characteristic of transmitting only g-rays mainly generated from the light source 1 and a characteristic of transmitting only h-rays mainly generated from the light source 1 It is possible to selectively use a second filter having a third filter and a third filter having a characteristic of transmitting only i-rays mainly generated from the light source 1.

Therefore, as shown in FIG. 12 using the test mask 11 (FIG. 7), when the 1st filter is used, the 1st reference light intensity data Ig and 1st obtained by the imaging part 5 (FIG. 2) The second reference light intensity data Ih obtained by the imaging section 5 when the two filters are used, and the third reference light intensity data Ii obtained by the imaging section 5 when the third filter is used. Each of these reference light intensity data Ig, Ih, and Ii is a result of multiplying the spectral distribution of the light source 1, the spectral sensitivity distribution of the imaging section 5, and the spectral transmittance of each filter. It is also the result of multiplying the spectral transmittance of each optical element which the inspection light from 1) transmits.

The spectral distribution of the light source 1, the spectral sensitivity distribution of the imaging section 5, and the spectral transmittance of each optical element are not uniform with respect to the wavelength. Therefore, certain imaging patterns become different patterns according to the wavelength difference of each inspection light (g line | wire, h line | wire, i line | wire) used for imaging.

Next, the first to third coefficients α, β, and γ for each of the reference light intensity data Ig, Ih, and Ii having the first to third reference light intensity data Ig, Ih, and Ii at equal levels are obtained. That is, as shown in FIG. 12, the result of multiplying the first reference light intensity data Ig by the first coefficient α, the result of multiplying the second reference light intensity data Ih by the second coefficient β, and the third reference light intensity data Ii The coefficients α, β, and γ are calculated so that the result of multiplying by the third coefficient γ is at the same level. Here, the equivalent level means that the peak intensities of the respective reference light intensity data Ig, Ih and Ii are equal to each other.

In this inspection apparatus, first to third coefficients α, β, and γ are obtained in advance so that the respective reference light intensity data Ig, Ih, and Ii are equal to each other, and these coefficients α, β, and γ It is grasped by the user to use.

When the inspection is performed on the photomask to be inspected, the first optical intensity data Jg is obtained by the imaging unit 5 using the first filter on the photomask, and the imaging unit ( The second light intensity data Jh is obtained by 5), and the third light intensity data Ji is obtained by the imaging section 5 using the third filter.

Next, the first light intensity data Jg is multiplied by the first coefficient α, the second light intensity data Jh is multiplied by the second coefficient β, and the third light intensity data Ji is multiplied by the third coefficient γ, thereby obtaining the light source 1. ), The influence of the spectral sensitivity distribution of the imaging unit 5 and the spectral transmittance of each optical element of the inspection apparatus are corrected, and the exposure state when the resist, which is the object to be exposed, is exposed using the photomask. One light intensity data [α × Jg, β × Jh, γ × Ji] is obtained.

As described above, this operation can be performed by the control unit using the control unit as the calculation unit.

In addition, when the spectral characteristics of an exposure apparatus, ie, the spectral distribution of the light source of an exposure apparatus, and the spectral transmittance of each optical element of an exposure apparatus, are known, the coefficients u, v, w according to these spectral characteristics can be determined. As these coefficients u, v and w, for example, the light intensity of the h line (for example, 0.9104) and the light intensity of the i line (for example, 1.0746) when the light intensity of the g line is set to 1.0 are obtained. The light intensity ratio (for example, 0.335: 0.305: 0.360) which makes the sum total 1 can be used.

And by multiplying the coefficients according to the spectral characteristics of these exposure apparatuses corresponding to the first to third light intensity data again, this exposure apparatus corresponds to the exposure state when the resist is exposed using the photomask. The light intensity data [u × α × Jg, v × β × Jh, w × γ × Ji] can be obtained more accurately.

In addition, when the spectral sensitivity characteristic (absorption spectrum) of a resist is known, the coefficient x, y, z according to this spectral sensitivity characteristic can be determined. As the coefficients x, y, and z, for example, the absorption amount of the h line (e.g., 1.6571) and the absorption amount of the i line (e.g., 1.8812) when the absorption amount of the g line is 1.0 is determined, and the sum thereof is 1. An absorption ratio (for example, 0.220: 0.365: 0.415) can be used.

And by multiplying the coefficient according to this spectral characteristic corresponding to the 1st-3rd light intensity data again, the light intensity data corresponding to the exposure state at the time of exposing the resist using this photomask by this exposure apparatus [ x × α × Jg, y × β × Jh, z × γ × Ji] (or [x × u × α × Jg, y × v × β × Jh, z × w × γ × Ji]). Can be. Such a calculation can also be performed by this control part using a control part as a calculation part.

[Quality Display Method of Photomask According to the Present Invention]

The quality display method of the photomask according to the present invention is to associate the photomask information obtained as described above with the photomask corresponding to the photomask information. In the case of correspondence, identification information unique to the photomask may be attached to the photomask and the photomask information in a recognizable form.

In the quality display method of this photomask, since photomask information is associated with each photomask, exposure conditions can be set suitably as mentioned above in performing exposure by the exposure apparatus using this photomask. Moreover, the developing conditions, etching conditions, etc. of the resist after exposure can be set suitably.

[Manufacturing Support Method of Electronic Device According to the Present Invention]

In the manufacturing support method of the electronic device according to the present invention, as shown in Fig. 13A, the photomask information obtained as described above is associated with the photomask corresponding to the photomask information. It supports the manufacture of electronic devices using photomasks.

This example is shown in Fig. 13A. In this electronic device manufacturing support method, the pattern data (CAD data) of a photomask is prepared in step st1, and a photomask is manufactured based on this pattern data in step st2. In step st3, the final evaluation of the manufactured photomask is performed. Up to now, it is a normal mask manufacturing process. The inventors have previously proposed that the performance of the mask is confirmed using a hardware simulator as shown in FIG. 2 as an inspection apparatus, and employing a condition close to the exposure conditions of the actual mask at that time. And when mask performance is confirmed, it is shipped.

On the other hand, in the present invention, the photomask information is acquired in advance, and the photomask information is provided to the photomask user in a state associated with the photomask, whereby the photomask user who uses the photomask manufactures the electronic device. Support.

At the time of acquiring photomask information, a test mask is created, for example in step st4 of FIG.13 (a). The test mask is manufactured by referring to the pattern of the photomask and including an approximated pattern so as to simulate exposure of the photomask, and including a semi-transmissive portion having a plurality of line widths. In step st5, a condition similar to the actual exposure conditions of the photomask is applied using the inspection apparatus (simulator) described above to obtain a transmitted light pattern of transmitted light of the photomask. Preferably, the transmitted light pattern in the case of applying a plurality of exposure conditions is obtained. Then, transmitted light pattern data is generated from the transmitted light pattern.

Here, of course, the mask used for obtaining the transmitted light pattern data may be the photomask itself in addition to the test mask. However, in the case of the information only, it is not possible to grasp the change in the transmitted light pattern data due to the change in the line width of the semi-transmissive portion.

In step st6, the manufactured photomask and the photomask information corresponding to this photomask are corresponded to the manufacturing process of an electronic device, or are provided to the mask user concerning the manufacturing process of an electronic device.

As described above, in the present invention, by providing the transmitted light pattern data in a state associated with the photomask, the mask user can predict the resist pattern obtained when the mask is used for exposure, and the exposure condition to be applied to the exposure. Can be determined.

In this electronic device manufacturing support method, since photomask information is associated with each photomask, exposure conditions are appropriately set as mentioned above in performing exposure by an exposure apparatus using this photomask. In addition, the developing conditions, etching conditions, etc. of the resist after exposure can be set suitably.

Further, even when the manufacture of the photomask and the manufacture of the electronic device using the photomask are performed by different manufacturers, the manufacturer of the photomask performs the manufacturing support method for the electronic device according to the present invention, thereby providing the electronic device. In performing exposure by the exposure apparatus using the photomask supplied from the manufacturer of the photomask, the manufacturer can suitably set the exposure conditions, and further develops the development conditions, etching conditions, and the like of the resist after exposure. Since it can set suitably, manufacture of an electronic device can be performed correctly.

[Method for Manufacturing Electronic Device]

In manufacturing an electronic device such as a liquid crystal display device, in a generally known manufacturing process, by using the photomask information according to the present invention described above, appropriate exposure conditions can be determined, and a resist pattern obtained by exposure can be predicted. have. For this reason, a favorable electronic device (liquid crystal display device etc.) can be manufactured quickly.

Thereby, it becomes possible to obtain desired performance with respect to an electronic device stably in a short time with favorable manufacture yield.

[Photomask Products]

Moreover, this invention is applied to the photomask information by the photomask information acquisition method which concerns on this invention, and the whole photomask product containing the said photomask.

BRIEF DESCRIPTION OF THE DRAWINGS The figure for demonstrating the effective transmittance in the center of the semi-transmissive part interposed between the edge of a pair of parallel light shielding parts.

Fig. 2 is a side view showing the configuration of an inspection apparatus for use in the method for acquiring photomask information according to the present invention.

(A)-(c) is sectional drawing which shows the manufacturing process (overall) of a TFT substrate using a gray tone mask.

4 (a) to 4 (c) are cross-sectional views illustrating a manufacturing process (second half) of a TFT substrate using a gray tone mask.

5 is a plan view showing the configuration of a gray tone mask.

FIG. 6 is a diagram showing a state of a gray tone part in the imaging data obtained by the inspection apparatus shown in FIG. 2; FIG.

7A and 7B are plan views showing the configuration of test masks used in the method for acquiring photomask information according to the present invention;

8A and 8B are plan views showing unit patterns in the test masks shown in FIGS. 7A and 7B.

FIG. 9 is a plan view illustrating another example of a unit pattern in the test mask illustrated in FIGS. 7A and 7B.

FIG. 10 is a plan view illustrating still another example of a unit pattern in the test mask illustrated in FIGS. 7A and 7B.

(A) is a graph which shows the spectral characteristic of the light source in the inspection apparatus of the photomask shown in FIG. 2, and FIG. 11 (b) is the spectral of the wavelength selective filter used by the inspection apparatus of the photomask shown in FIG. Fig. 11C is a graph showing another example of the spectral characteristics of the wavelength selective filter used in the inspection apparatus of the photomask shown in Fig. 2.

FIG. 12 shows spectral characteristics of the light source in the inspection apparatus of the photomask shown in FIG. 2, spectral sensitivity distribution of the imaging element constituting the imaging unit in the inspection apparatus, and reference light intensity data obtained corresponding to each filter in the inspection apparatus. A graph showing a state multiplied by a coefficient corresponding to each reference light intensity data.

(A) is a flowchart which shows the procedure in the manufacturing support method of the electronic device which concerns on this invention, FIG. 13 (b) is an enlarged view of the graph in FIG.

<Description of the symbols for the main parts of the drawings>

1: light source

2: illumination optical system

3: photomask

3a: mask holder

4: objective lens system

5: imaging unit

Claims (21)

The resist film formed on the layer to be etched is exposed to light under a predetermined exposure condition by using a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and the resist film is exposed to the above-mentioned. A method of acquiring photomask information for acquiring information about a photomask used for forming a resist pattern having different portions of a resist remaining film amount used as a mask in an etching process, The exposure mask is exposed to the photomask or the test mask close to the photomask by using the exposure conditions close to the predetermined exposure condition, and the transmitted light pattern of the photomask or the test mask is acquired by an imaging means, and the obtained transmitted light is obtained. And generating photomask information including transmitted light pattern data based on a pattern, and associating the photomask information with the photomask. The method of claim 1, And the processing layer is used for manufacturing a liquid crystal display device. The method of claim 1, And the transflective portion has a portion in which a transflective film having a predetermined transmittance of less than 100% is formed on a transparent substrate when the exposure light transmittance of the transmissive portion is 100%. The method of claim 1, And the semi-transmissive portion has a portion formed on the transparent substrate with a fine light shielding pattern having a dimension below the resolution limit under the predetermined exposure conditions. The method according to claim 3 or 4, The photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in exposure conditions. The method of claim 3, wherein The photomask has a translucent film on the transflective portion, and the photomask information includes information on a tendency of change in the exposure light transmittance of the transflective portion with respect to a change in film thickness or film quality of the translucent film. How to get photomask information. The method according to claim 3 or 4, And the photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to the change of the pattern line width. The resist film formed on the layer to be etched is exposed to light under a predetermined exposure condition by using a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and the resist film is exposed to the above-mentioned. As a quality display method of a photomask which displays the quality of the photomask used for forming a resist pattern having different portions of the resist remaining film amount used as a mask in etching, The exposure mask is exposed to the photomask or the test mask close to the photomask by using the exposure conditions close to the predetermined exposure condition, and the transmitted light pattern of the photomask or the test mask is acquired by an imaging means, and the obtained transmitted light is obtained. Generating photomask information including transmitted light pattern data based on the pattern; Mapping the photomask information to the photomask Quality display method of a photomask having a. The method of claim 8, The processing layer is a quality display method of a photomask, characterized in that used for manufacturing a liquid crystal display device. The method of claim 8, The semi-transmissive portion has a portion in which a translucent film having a predetermined transmittance of less than 100% is formed on a transparent substrate when the exposure light transmittance of the transmissive portion is 100%. The method of claim 8, The semi-transmissive portion has a portion on which a fine light shielding pattern having a dimension below the resolution limit under the predetermined exposure conditions is formed on a transparent substrate. The method of claim 10 or 11, And the photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in exposure conditions. The method of claim 10, The photomask has a translucent film on the transflective portion, and the photomask information includes information on a tendency of change in the exposure light transmittance of the transflective portion to a change in the film thickness or film quality of the translucent film. To display the quality of the photomask. The method of claim 10 or 11, And the photomask information includes information on a change tendency of the exposure light transmittance of the semi-transmissive portion with respect to a change in the pattern line width. The resist film formed on the layer to be etched is exposed to light under a predetermined exposure condition by using a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and the resist film is exposed to the above-mentioned. A manufacturing support method for an electronic device supporting the manufacture of an electronic device, which has a step of forming a resist pattern having a different portion of the resist residual film amount used as a mask in etching. The exposure mask is exposed to the photomask or the test mask close to the photomask by using the exposure conditions close to the predetermined exposure condition, and the transmitted light pattern of the photomask or the test mask is acquired by an imaging means, and the obtained transmitted light is obtained. Generating photomask information including transmitted light pattern data based on the pattern; Mapping the photomask information to the photomask The manufacturing support method of the electronic device characterized by having. The method of claim 15, And said electronic device is a liquid crystal display device. The method of claim 15, And the transflective portion has a portion in which a transflective film having a predetermined transmittance of less than 100% is formed on a transparent substrate when the exposure light transmittance of the transmissive portion is 100%. The method of claim 15, And the semi-transmissive portion has a portion formed on the transparent substrate with a fine light shielding pattern having a dimension below the resolution limit under the predetermined exposure conditions. The resist film formed on the layer to be etched is exposed to light under a predetermined exposure condition by using a photomask having a predetermined transfer pattern composed of a light shielding portion, a light transmitting portion, and a semi-transmissive portion, and the resist film is exposed to the above-mentioned. A method for manufacturing an electronic device, comprising the step of forming a resist pattern having different portions of a resist remaining film amount used as a mask in etching. The manufacturing method of the electronic device characterized by including the process of determining an exposure condition based on the photomask information by the acquisition method of Claim 1, and exposing to the said photomask by the said determined exposure condition. The method of claim 19, The manufacturing conditions of the said resist film or the etching conditions in the said etching process are determined based on the said photomask information, The manufacturing method of the electronic device characterized by the above-mentioned. A photomask product comprising photomask information by the acquisition method of claim 1 and said photomask.

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