KR20090009056A - Semiconductor substrate and apparatus for recognizing the same - Google Patents

Abstract

The semiconductor substrate and recognition apparatus are provided to suppress the generation of particle in the semiconductor substrate and to form a label on the surface of the semiconductor substrate without forming the physical hole. The semiconductor substrate comprises the first area and the second part. The first area is comprised of the labeling region among the semiconductor substrate. The second part is comprised of the part except for the labeling region. The optical characteristic of the first area is different from the optical characteristic of the second part to distinct the first area and the second part. The first area of the semiconductor substrate is automatically acknowledged with the semiconductor substrate recognizing apparatus.

Description

Semiconductor substrate and apparatus for recognizing the same

The present invention relates to a semiconductor substrate, and more particularly to a semiconductor substrate comprising a labeling indication.

In order to effectively manage a semiconductor substrate (hereinafter referred to as a substrate) during the manufacturing process of the semiconductor device, a unique label is formed on the substrate. The label of the substrate may consist of a combination of letters or numbers. The label of the substrate is used as an important means for identifying the substrate. That is, the label of the substrate may clearly manage information on semiconductor products formed on the substrate, information on semiconductor processes performed on the substrate, and / or information on semiconductor processes to be processed on the substrate.

Typically, the label of the substrate is formed using a laser beam. That is, a laser beam of high energy is scanned on the labeling area of the substrate to etch a predetermined area of the substrate to write a label composed of a combination of letters or numbers. The labels of these substrates are visually identified by the operator. However, while various kinds of material films are deposited on the substrate, or while some of the deposited material films are polished by a chemical mechanical polishing process, the label formed by the laser beam is filled or placed on the label. The material film formed on the substrate may be planarized to blur the wheel angle of the label of the substrate. Accordingly, it may be difficult to identify the label of the substrate. In accordance with the tendency of high integration of semiconductor devices, semiconductor devices are formed to have a vertically high structure in order to reduce the planar area. As such, it may be more difficult to identify the label of the substrate as the number or / and thickness of material films deposited on the substrate is increasing.

1A to 1C are planar photographs illustrating a label of a semiconductor substrate according to the prior art.

Referring to FIG. 1A, a label 10 of a semiconductor substrate is formed by scanning an appropriate laser energy onto a semiconductor substrate, for example, a silicon substrate to form holes in the surface of the substrate.

Referring to FIG. 1B, a label 20 of a semiconductor substrate is formed by scanning a laser energy lower than an appropriate laser energy to a semiconductor substrate, for example, a silicon substrate, to form a hole in the surface of the substrate. In this case, it is difficult to visually identify and the semiconductor substrate cannot be identified by the subsequent deposition and planarization process.

Referring to FIG. 1C, a label 30 of a semiconductor substrate is formed by injecting laser energy higher than an appropriate laser energy into a semiconductor substrate, for example, a silicon substrate to form a hole in the surface of the substrate. In this case, the hole bursts and the sizzling portion (a thick black portion in FIG. 1C) acts as a particle source in the subsequent cleaning process.

2A and 2B are plan views of a case where a subsequent process is performed on a bad label.

Referring to FIG. 2A, as the subsequent etching or deposition process is repeated on a bad label, the label of the substrate is blurred and thus cannot be discerned by the naked eye, so that the history of the semiconductor substrate can not be grasped and a work accident may occur. .

Referring to FIG. 2B, it is a plan view of the case where the labeling process is performed again because the label of the semiconductor substrate is not seen as shown in FIG. 2A. Inconsistency can cause particle defects in subsequent processes.

Therefore, there is a need for a semiconductor substrate capable of suppressing the occurrence of defects than a substrate for forming a physical hole on the surface of the semiconductor substrate to form a label.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a semiconductor substrate including a label capable of preventing defects without generating physical holes on the surface of the semiconductor substrate, and an apparatus for recognizing the same.

A semiconductor substrate according to an embodiment of the present invention for achieving the above technical problem is a first region consisting of a labeling region of the semiconductor substrate; And a second region including portions of the semiconductor substrate other than the labeling region. The first region differs in optical characteristics from the second region in order to identify the first region and the second region. The optical properties may include refractive index or reflectance. The optical characteristic of the first region is preferably formed by ion implantation on the first region or lattice deformation of the first region. The first region may be a region formed on an upper surface or a lower surface of the semiconductor substrate.

According to another aspect of the present invention, there is provided a semiconductor substrate including: a first region including a labeling region among deposition films on the semiconductor substrate; And a second region including portions of the deposition film on the semiconductor substrate except for the labeling region. In order to identify the first area and the second area, the first area has a different optical characteristic from the second area. The optical characteristic may include refractive index or reflectance, and the optical characteristic of the first region is preferably formed by ion implantation on the first region or lattice deformation of the first region. The first region may be formed on an upper surface or a lower surface of the semiconductor substrate.

A semiconductor substrate recognition apparatus according to another embodiment of the present invention for achieving the above technical problem includes a device for automatically recognizing the first region of the semiconductor substrate described above. The automatic recognition device preferably uses light of the filtered wavelength.

According to the semiconductor substrate according to the present invention, a semiconductor substrate in which particle generation is suppressed can be implemented, and a label can be formed on the rear surface of the semiconductor substrate. In addition, according to the apparatus for recognizing a semiconductor substrate according to the present invention, it is possible to prevent an operator's mistake about label recognition.

The invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the scope of the invention to those skilled in the art will fully convey. Throughout the specification, when referring to one component, such as a film, region, or substrate, being "on" another component, the component is in direct contact with or intervening with another component. It can be interpreted that elements may exist. Also, relative terms such as "top" or "above" and "bottom" or "below" may be used herein to describe the relationship of certain elements to other elements. It may be understood that relative terms are intended to include other directions of the device. For example, if the device is turned over, elements depicted as being on the face of the top of the other elements are oriented on the face of the bottom of the other elements. Thus, the example "top" may include both "bottom" and "top" directions.

In some embodiments of the present disclosure, the semiconductor substrate may include a first region including a labeling region and a second region including portions of the semiconductor substrate except for the labeling region. Here, in order to identify the first area and the second area, the first area has an optical property different from the second area, and the optical property may be, for example, a refractive index or a reflectance. Specifically, when a high current ion is implanted into a semiconductor substrate, for example, a silicon substrate using an apparatus such as an ion beam, the optical characteristics of the implanted portion are changed. In addition, the lattice of the semiconductor substrate may be deformed to distinguish the first region from the second region. In addition to ion implantation, other methods known to those skilled in the art may be used for the method of modifying the lattice of the semiconductor substrate. The first region may be generally formed on the upper surface of the semiconductor substrate, but the present invention is not limited to this configuration. For example, the first region may be formed on the bottom surface of the semiconductor substrate. When the first region, which is a labeling region, is formed on the bottom surface of the semiconductor substrate, there is an advantage that it is relatively less affected by the subsequent deposition, etching, and planarization processes.

Although the label formed inside the semiconductor substrate has been described above, the present invention should not be limited to this configuration. For example, the same may be explained in the label formed inside the thin film deposited on the semiconductor substrate. That is, in another embodiment of the present invention, a first region including a labeling region of the deposition layer on the semiconductor substrate and a second region including the portion except for the labeling region among the deposition layer on the semiconductor substrate are included. Here, in order to identify the first area and the second area, the first area has an optical property different from the second area, and the optical property may be, for example, a refractive index or a reflectance. Specifically, when a high current ion is implanted into a semiconductor substrate, for example, a silicon substrate using an apparatus such as an ion beam, the optical characteristics of the implanted portion are changed. In addition, the lattice of the semiconductor substrate may be deformed to distinguish the first region from the second region. In addition to ion implantation, other methods known to those skilled in the art may be used for the method of modifying the lattice of the semiconductor substrate. The first region may be generally formed on the upper surface of the semiconductor substrate, but the present invention is not limited to this configuration. For example, the first region may be formed on the bottom surface of the semiconductor substrate. When the first region, which is a labeling region, is formed on the bottom surface of the semiconductor substrate, there is an advantage that it is relatively less affected by the subsequent deposition, etching, and planarization processes.

In still another embodiment of the present invention, there is provided a semiconductor substrate recognition apparatus including an apparatus for automatically recognizing the first region of the semiconductor substrate described above. For example, when the first area is labeled in the same manner as a barcode, the semiconductor substrate may be automatically recognized by mounting a system capable of reading the barcode. The automatically recognizing device may include using light of the filtered wavelength. By using the semiconductor substrate recognition apparatus, the label of the semiconductor substrate can be recognized mechanically accurately, thereby preventing the mistake by the operator.

The foregoing description of specific embodiments of the invention has been presented for purposes of illustration and description. Therefore, the present invention is not limited to the above embodiments, and various modifications and changes are possible in the technical spirit of the present invention by combining the above embodiments by those skilled in the art. It is obvious.

1A to 1C are planar photographs illustrating a label of a semiconductor substrate according to the prior art.

2A and 2B are plan views of a case where a subsequent process is performed on a bad label.

Claims (10)

A first region comprised of a labeling region of the semiconductor substrate; And a second region formed of a portion of the semiconductor substrate except for the labeling region. The first region has a different optical characteristic from the second region to identify the first region and the second region. The semiconductor substrate of claim 1, wherein the optical characteristic comprises a refractive index or a reflectance. The semiconductor substrate of claim 1, wherein the optical characteristic of the first region is formed by ion implantation on the first region or lattice deformation of the first region. The semiconductor substrate of claim 1, wherein the first region is a region formed on an upper surface or a lower surface of the semiconductor substrate. A first region including a labeling region of the deposition film on the semiconductor substrate; And a second region formed of a portion of the deposition film on the semiconductor substrate except for the labeling region. The first region has a different optical characteristic from the second region to identify the first region and the second region. The semiconductor substrate of claim 5, wherein the optical characteristic comprises a refractive index or a reflectance. The semiconductor substrate of claim 5, wherein the optical characteristic of the first region is formed by ion implantation on the first region or lattice deformation of the first region. The semiconductor substrate of claim 1, wherein the first region is a region formed on an upper surface or a lower surface of the semiconductor substrate. A semiconductor substrate recognition device comprising an apparatus for automatically recognizing the first region of the semiconductor substrate of claim 1. 10. The apparatus of claim 9, wherein the automatically recognizing device uses light having a filtered wavelength.

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