KR20090006286A - Equipment for polishing wafer semiconductor and dual head pad conditioner of equipment thereof - Google Patents

Abstract

The apparatus of polishing semiconductor wafer and the dual head pad conditioner of the same are provided to control easily the conditioner sweep by using 200mm size of the diamond disc during the conditioning of the polishing pad for 300mm wafer. The polishing head(50) vacuum-absorbs the wafer. The motor rotates the polishing head. The polishing pad(56). It is installed at the lower part of the polishing head and polishes the wafer. The platen fixes the polishing pad. The first and second pad conditioners (70,72) is separately installed with the constant interval and maintain the surface state of the polishing pad.

Description

Semiconductor Wafer Polishing Device and Dual Head Pad Conditioner of the Device {EQUIPMENT FOR POLISHING WAFER SEMICONDUCTOR AND DUAL HEAD PAD CONDITIONER OF EQUIPMENT THEREOF}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for semiconductor wafers, and more particularly, to a dual head pad conditioner for uniformly conditioning a polishing pad of a polishing apparatus for planarizing a metal layer formed on a wafer surface in a semiconductor device manufacturing process.

In general, semiconductor devices have increased steps due to high density, miniaturization, and multilayered wiring structure, and in order to planarize the steps, various planarization methods such as SOG (Spin on Glass), ETCH BACK, REFLOW, etc. have been developed for the planarization of wafers. Is being applied.

Such a planarization process of the wafer has a mechanical polishing method and a chemical polishing method, and the mechanical polishing method is a defect on a semiconductor chip due to the formation of a processing deterioration layer, and the chemical polishing method does not produce a processing deterioration layer, but planarization Since a precise shape, that is, shape precision cannot be obtained, a planarization process for grafting the mechanical polishing method and the chemical polishing method is required, and the CMP (Chemical Mechanical Polishing) technology has been developed. In the CMP process, the polishing table to which the polishing pad is attached is rotated, the polishing head performs rotational and rocking motion simultaneously, pressurized to a constant pressure, and the wafer is mounted on the polishing head portion by surface tension or vacuum. The polishing surface is brought into contact with the surface of the wafer by the self-load of the polishing head and the applied pressure, and a slurry, which is a processing liquid, flows between the minute gaps between the contact surfaces to the abrasive particles and the surface protrusions of the pad. Mechanical removal is effected and chemical removal is effected by chemical components in the slurry. When the polishing process by chemical mechanical polishing (CMP) is performed, irregular polishing of the polishing pad occurs, so that the polishing pad is conditioned during or after polishing. One example of such a polishing pad conditioner is disclosed in US Pat. No. 6,042,457 to Wilson et al. And US Pat. No. 5,938,597 to Ko et al.

The pad conditioner is largely composed of a head, a body, and a bearing. The portion of the polishing pad that is closed on the surface of the polishing pad is equipped with a diamond disk on the head to remove foreign substances and slurry distribution on the polishing pad surface.

1 is a structural diagram of a polishing apparatus of a conventional semiconductor wafer.

A polishing pad 16 for polishing the wafer 12, a polishing platen 20 for fixing the polishing pad 16 and rotating the polishing pad 16, and an upper portion of the polishing pad 16. And a wafer 12 mounted thereon, a polishing head 10 for vacuum suction of the wafer 34, a motor 26 for rotating the polishing head 10, and the polishing. A pad conditioner head 24 for rotating the pad 16 so as to be conditioned, and a conditioner pad 22 attached to a lower portion of the pad conditioner head 24 to condition the polling pad 16. Consists of

In the polishing operation of the polishing pad of the wafer polishing apparatus applied to the embodiment of the present invention configured as described above, the polishing platen 20 on which the polishing pad 16 is installed is rotated in the rotational direction of the wafer 12. The conditioner head 24 is rotated in the opposite direction of rotation of the polishing platen 20. Then, the conditioner head 24 is moved downward so that the conditioner pad 22 is brought into close contact with the polishing pad 16, and the polishing pad 16 is polished while supplying the slurry SLURRY.

And the pad conditioner 28 for polishing the polishing pad 16 plays an important role in the polishing action, it can be seen in two ways.

First, the pad conditioner 28 is swept so that the slurry, which is an abrasive, is evenly distributed over the entire surface of the wafer 12 to prevent the wafer 12 from being locally polished. Secondly, when the wafer 12 and the polishing pad 16 are in contact with each other and continuously polished, the groove of the polishing pad 16 is worn out due to friction, and thus the polishing ability is lowered. Thus, the pad conditioner 28 The diamond disk of FIG. 9 applies pressure to the polishing pad 16 to maintain the roughness of the polishing pad 16 at a predetermined level through sweep and rotation to prevent a decrease in polishing ability.

Recently, as the size of the wafer has been largely increased from 200 mm to 300 mm, the polishing pad and the head retainer ring have increased in size, but the size of the conditioner head has the same size as the conditioner of the 200 mm facility. If the size of the conditioner pad 22 and the conditioner head 24 made of a diamond disk mounted to the conditioner head 24 is increased to a size suitable for a 300 mm wafer, it is difficult to control the conditioner sweep during conditioning of the polishing pad.

Accordingly, an object of the present invention is to provide a semiconductor wafer polishing apparatus and a dual head of the apparatus for facilitating conditioner sweep control by adjusting the size of the diamond disk to the same size as the polishing apparatus of 200 mm when conditioning the polishing pad for polishing a 300 mm wafer. It is in providing a conditioner.

It is another object of the present invention to provide a semiconductor wafer polishing apparatus and a dual head conditioner of the apparatus for uniformly removing foreign matters and slurry distribution during polishing of a polishing pad for polishing a 300 mm wafer.

The dual head conditioner of the semiconductor wafer polishing apparatus applied to the present invention for achieving the above object is provided with a predetermined interval in the horizontal direction with a polishing head to which the wafer is adsorbed to uniformly maintain the surface state of the polishing pad for polishing the wafer. And a first and a second pad conditioner, wherein the first and second pad conditioners are conditionally maintained. The first and second pad conditioners are integrally formed.

The first pad conditioner includes a first pad conditioner head for rotating the polishing pad to condition the polishing pad, and a first conditioner pad attached to a lower portion of the pad conditioner head to condition the polling pad. ,

The second pad conditioner includes a second pad conditioner head for rotating the polishing pad so as to condition the polishing pad, and a second conditioner pad attached to a lower portion of the second pad conditioner head to condition the polling pad. Characterized in that configured.

The semiconductor wafer polishing apparatus applied to the present invention for achieving the above object is a polishing head for vacuum suction of the wafer, a polishing pad for polishing the wafer is provided in the lower portion of the polishing head, and fixing the polishing pad And a plurality of pad conditioners installed at a predetermined interval in a horizontal direction with a polishing head to which the wafer is adsorbed, and conditioned to maintain a constant surface state of the polishing pad for polishing the wafer.

The plurality of pad conditioners may be attached to first and second pad conditioner heads for rotating the polishing pad so as to condition the polishing pads, and lower portions of the first and second pad conditioner heads, respectively. And a first and a second conditioner pad for conditioning.

Preferably, the plurality of pad conditioners are integrally formed.

As described above, the present invention is to form a dual pad conditioner for polishing a 200mm wafer when polishing a 300mm wafer in the semiconductor device manufacturing process to remove foreign matter and sludge on the polishing pad quickly and uniformly. do.

In addition, by uniformly distributing the slurry and shortening the sweep section of the pad conditioner, the polishing pad may be quickly polished to improve the conditioning uniformity of the polishing pad, and the polishing time may be shortened to improve productivity.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, if it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

2 is a front configuration diagram of a wafer polishing apparatus according to an embodiment of the present invention;

3 is a plan view illustrating a polishing apparatus for a wafer according to an embodiment of the present invention.

A polishing head 50 for vacuum suction of the wafer 52, a motor 60 for rotating the polishing head 10, and a lower portion of the polishing head 50 to polish the wafer 52. Polishing pad 56, the platen 58 for fixing the polishing pad 56, and the polishing head 50 is spaced apart at a predetermined interval in the horizontal direction to the surface state of the polishing pad 56 It consists of first and second pad conditioners 70 and 72 which condition to remain constant.

The first pad conditioner 70 is attached to a lower portion of the pad conditioner head 64 and a first pad conditioner head 64 for rotating the polishing pad 56 so as to condition the polling pad. The first conditioner pad 62 is configured to condition the pads 56.

The second pad conditioner 72 is attached to a lower portion of the second pad conditioner head 68 and a second pad conditioner head 68 to rotate the polishing pad 56 so as to be conditioned. The second conditioner pad 66 is configured to condition the polling pad 56.

2 to 3 will be described in detail the operation of the preferred embodiment of the present invention.

Referring to a polishing operation of a wafer polishing apparatus applied to an embodiment of the present invention, the wafer 52 loaded from HCLU (not shown) is adsorbed by the polishing head 50 and is polished by adsorbing the wafer 52. Head 50 moves wafer 52 to the top of each platen 58. The polishing heads 50 respectively move and apply pressure to the platen 58, thereby applying pressure to the polishing pad 56 placed on the platen 58 and the wafer 52 placed between the polishing heads 50. . The polishing pad 56 and the polishing head 50 are rotated to polish the wafer film. At this time, the polishing slurry is supplied to the polishing pad 56 to assist the polishing operation, and the polishing disks are attached to the first and second pad conditioners 70 and 72 so that the slurry is evenly distributed on the entire surface of the wafer 52. The first and second conditioner pads 62 and 66 act as a sweep on the polishing pad 56. In addition, the first and second pad conditioners 70 and 72 are spaced apart from each other around the polishing head 50, and when not in conditioning, the first and second pad conditioners 70 and 72 are seated on a cleaning cup (not shown) for cleaning. .

Here, the first and second pad conditioners 70 and 72 for polishing the polishing pad 56 play an important role in the polishing operation. The first and second pad conditioners 70 and 72 are swept so that the slurry, which is an abrasive, is evenly distributed over the entire surface of the wafer 52 to prevent the wafer 52 from being locally polished. In addition, when the first and second pad conditioners 70 and 72 are continuously polished by contact between the wafer 52 and the polishing pad 56, grooves of the polishing pad 56 are worn out due to friction. As a result, the polishing ability is reduced, so that the first and second conditioner pads 62 and 66, which are diamond disks of the first and second pad conditioners 70 and 72, pressurize the polishing pad 56 to sweep. Through rotation to maintain the roughness of the polishing pad 56 to a certain level to prevent a decrease in polishing capacity. The first and second pad conditioners 70 and 72 are integrally formed to move together when conditioning the polishing pad 56, and to shorten the sweep section more than when sweeping with one pad conditioner. The surface of the polishing pad 56 is uniformly polished to perform the polishing, and a plurality of suction holes 74 provided on the polishing pad 56 are cleaned of foreign matter, sludge, etc. remaining on the polishing pad 56. To be quickly and uniformly removed. As a result, scratches may be reduced due to the foreign matter remaining on the polishing pad 56, and uniformity of slurry distribution may be improved to improve the conditioning uniformity of the polishing pad 56.

1 is a plan view of a typical wafer polishing apparatus,

2 is a front configuration diagram of a wafer polishing apparatus according to an embodiment of the present invention.

Figure 3 is a plan view of a polishing apparatus for a wafer according to an embodiment of the present invention

            Explanation of symbols on the main parts of the drawings

50: polishing head 52: wafer

56: polishing pad 58: platen

60: motor 62, 66: first and second conditioner pads

64, 68: first and second conditioner heads 70. 72: first and second pad conditioners

Claims (5)

In the dual-head conditioner of the semiconductor wafer polishing apparatus, A first pad and a second pad conditioner, which are installed at a predetermined interval in a horizontal direction with a polishing head to which the wafer is adsorbed, and which condition the surface of the polishing pad for polishing the wafer to be kept constant. A dual head pad conditioner of a semiconductor wafer polishing apparatus, characterized in that it is formed integrally. The method of claim 1, The first pad conditioner includes a first pad conditioner head for rotating the polishing pad to condition the polishing pad, and a first conditioner pad attached to a lower portion of the pad conditioner head to condition the polling pad. , The second pad conditioner includes a second pad conditioner head for rotating the polishing pad so as to condition the polishing pad, and a second conditioner pad attached to a lower portion of the second pad conditioner head to condition the polling pad. Dual head conditioner of semiconductor wafer polishing apparatus, characterized in that the configuration. In the semiconductor wafer polishing apparatus, A polishing head for vacuum suction of the wafer, A polishing pad installed under the polishing head to polish the wafer, a platen for fixing the polishing pad, And a plurality of pad conditioners installed at a predetermined interval in a horizontal direction with a polishing head to which the wafer is adsorbed to condition a surface condition of the polishing pad for polishing the wafer. According to claim 3, The plurality of pad conditioner, First and second pad conditioner heads for rotating the polishing pad to be conditioned; And first and second conditioner pads attached to lower portions of the first and second pad conditioner heads, respectively, to condition the polling pads. The method of claim 4, wherein And said plurality of pad conditioners are integrally formed.

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