KR20090004114A - Apparatus for treating substrate using plasma - Google Patents

Abstract

The present invention discloses a plasma processing apparatus, wherein a gas discharge suppressing member including a plurality of slit blocks is provided on a gas supply line for supplying heat transfer gas to a substrate, and each inner slit block partitions an internal space. Longitudinal partitions are provided.

According to this aspect, it is possible to provide a plasma processing apparatus that can minimize the discharge of the heat transfer gas supplied to the substrate, thereby controlling the temperature of the substrate to be plasma processed with high precision.

Description

Plasma treatment device {APPARATUS FOR TREATING SUBSTRATE USING PLASMA}

1 is a view showing an example of a plasma processing apparatus according to the present invention;

FIG. 2 is an enlarged view of the electrostatic chuck and the lower electrode of FIG. 1; FIG.

3 is a perspective view of the gas discharge suppressing member of FIGS. 1 and 2;

4 is an exploded perspective view of the slit blocks of FIG.

5A to 5C are cross-sectional views of the first to third slit blocks of FIG. 4.

<Description of Symbols for Main Parts of Drawings>

10 process chamber 100 lower electrode

120: electrostatic chuck 125a, 125b: gas supply line

126: pressure regulator 300a, 300b: gas discharge suppressing member

320a, 320b: slit block 322a, 322b: first slit block

324a, 324b, 324c: second slit block 326a, 326b: third slit block

322 ', 324', 326 ': bulkhead 340: manifold block

The present invention relates to a plasma processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.

In general, plasma refers to an ionized gas state composed of ions, electrons, radicals, and the like, and plasma is generated by a very high temperature, a strong electric field, or high frequency electromagnetic fields (RF Electromagnetic Fields).

Particularly, plasma generation by glow discharge is performed by free electrons excited by direct current or high frequency electromagnetic field, and the excited free electrons collide with gas molecules to generate active species such as ions, radicals and electrons. ) In addition, such active species physically or chemically act on the surface of the material to change the surface properties. This change in the surface properties of the material by the active species is called plasma surface treatment.

An apparatus for treating a substrate by plasma surface treatment refers to an apparatus for depositing a reaction material into a plasma state and depositing the reaction material on a semiconductor substrate, or cleaning, ashing or etching the substrate using the reaction material in a plasma state.

The present invention is to provide a plasma processing apparatus capable of controlling the temperature of a substrate to be plasma treated with high precision.

The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a plasma processing apparatus according to the present invention includes a process chamber in which a substrate processing process is performed; A substrate support member installed inside the process chamber to support a substrate and to which power is applied; And a gas discharge suppression member configured to suppress discharge of a heat transfer gas supplied to the substrate placed on the substrate support member, wherein the gas discharge suppression member is disposed on a gas supply line supplying the heat transfer gas, and an internal space. It characterized in that it comprises a plurality of slit blocks provided with longitudinal partitions partitioning.

In the plasma processing apparatus according to the present invention having the configuration as described above, the plurality of slit blocks may be disposed adjacent to the same axis, and the partition walls of the adjacent slit blocks may be provided to cross each other.

The partition walls provided in the respective slit blocks may be arranged in parallel.

The gas discharge suppressing member may include: a first slit block having a plurality of first partitions arranged in parallel and partitioning an internal space in a longitudinal direction; A second slit block connected to one end of the first slit block and having a plurality of second partitions arranged perpendicular to the first partitions; And a third slit block connected to the other end of the first slit block and having a plurality of third partitions vertically disposed with the first partitions.

The third partitions may be disposed at positions corresponding to the spaces between the second partitions.

The gas supply line includes a first gas supply line for supplying the heat transfer gas to a central portion of the substrate support member; And a second gas supply line configured to supply the heat transfer gas to an edge of the substrate support member, wherein the gas discharge suppression member may be disposed on the first and second gas supply lines.

The gas discharge suppression member may include a first gas discharge suppression member disposed at a portion embedded in the substrate support member of the first and second gas supply lines.

A controller for controlling a supply pressure of the heat transfer gas is provided on the first and second gas supply lines, and the gas discharge suppressing member is disposed in front of the controller on the first and second gas supply lines. It may further include a discharge suppression member.

Each of the first and second gas discharge suppression members may include: a first slit block having a plurality of first partitions arranged in parallel and partitioning an internal space in a longitudinal direction; A second slit block connected to one end of the first slit block and having a plurality of second partitions arranged perpendicular to the first partitions; And a third slit block connected to the other end of the first slit block and having a plurality of third partitions vertically disposed with the first partitions.

The third partitions may be disposed at positions corresponding to the spaces between the second partitions.

Hereinafter, a plasma processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals have the same reference numerals as much as possible even if displayed on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

The plasma processing apparatus of this embodiment may be applied to an ashing apparatus for removing an unnecessary photoresist layer remaining on a substrate after a photolithography process using a plasma, a deposition apparatus for depositing a film quality on a substrate, or an apparatus for cleaning or etching a substrate. have.

1 is a view showing an example of a plasma processing apparatus according to the present invention, Figure 2 is an enlarged view showing the electrostatic chuck and the lower electrode of FIG.

1 and 2, a pair of parallel plate type electrodes are provided inside the process chamber 10 in which the plasma processing process is performed. The electrode has a lower electrode 100 installed at the lower end of the process chamber 10 and an upper electrode 200 provided at the upper end of the process chamber 10 so as to face the lower electrode 100.

The high frequency power supply 110 is connected to the lower electrode 100 through the matching unit 112, and an electrostatic chuck 120 for supporting the semiconductor substrate W is installed on the upper surface of the lower electrode 100. The electrostatic chuck 120 has a configuration in which the electrode 122 for the electrostatic chuck is disposed in the insulating layer 121, and a DC power supply 123 is connected to the electrode for the electrostatic chuck 122. In addition, a baffle plate 130 is disposed around the lower electrode 100 to discharge the reaction by-products generated in the plasma processing space 20 between the lower electrode 100 and the upper electrode 200.

The upper electrode 200 is grounded, and a gas filling space 210 filled with a processing gas supplied from the outside is formed therein. The lower surface of the upper electrode 200, that is, the plasma exposure surface 220 may be coated with ceramic, and the plasma exposure surface 220 may have a processing gas filled in the gas filling space 210 toward the substrate W. A plurality of injection holes 230 are formed to be injected. Cooling members 240 for cooling the upper electrode 200 are coupled to an upper surface of the upper electrode 200, that is, an opposite surface of the plasma exposure surface, and cooling lines through which cooling fluid circulates inside the cooling member 240. 242 is formed. In addition, the shaft member 250 having a gas flow path for supplying a processing gas to the gas filling space 210 of the upper electrode 200 is coupled to the upper side of the cooling member 240, and the upper electrode 200 and the cooling member ( The heat transfer member 250 may be provided between the 240 to efficiently transfer the heat of the upper electrode 200 to the cooling member 240.

The processing gas is supplied to the plasma processing space 20 between the lower electrode 100 and the upper electrode 200 having the above configuration through the injection holes 230 of the upper electrode 200, and at the same time, the lower electrode ( When a high frequency power of a predetermined frequency is supplied to 100, plasma is generated in the plasma processing space 20.

While processing the substrate W placed on the electrostatic chuck 120 using the generated plasma, the substrate W must be adjusted to a predetermined process temperature. To this end, gas injection holes 124a and 124b are formed on the upper surface of the electrostatic chuck 120 to supply a heat transfer gas such as helium (He) to the lower surface of the substrate (W). First gas injection holes 124a are formed at a position corresponding to the center of the substrate W on the electrostatic chuck 120, and second gas injection holes at a position corresponding to the edge portion of the substrate W on the electrostatic chuck 120. 124b is formed. The first gas supply line 125a is connected to a flow path (not shown) that communicates with the first gas injection holes 124a, and the second gas supply line is connected to a flow path (not shown) that communicates with the second gas injection holes 124b. 125b is connected. The first and second gas supply lines 125a and 125b are connected to the pressure regulator 126, and a heat transfer gas supply source 127 is connected to the rear end of the pressure regulator 126. The pressure of the heat transfer gas supplied from the heat transfer gas source 127 to the first and second gas supply lines 125a and 125b is regulated by the pressure regulator 126 and the first and second gas supply lines 125a and 125b. The supply pressure of the heat transfer gas supplied to) may be adjusted to different pressures.

However, when high frequency power is applied to the lower electrode 100 for plasma generation, electrons in the heat transfer gas flowing through the first and second gas supply lines 125a and 125b are accelerated and discharged by the voltage generated by the high frequency power. May cause In order to prevent this, gas discharge suppressing members 300a and 300b are installed on the first and second gas supply lines 125a and 125b.

The gas discharge suppression members 300a and 300b include a first gas discharge suppression member 300a and a second gas discharge suppression member 300b. The first gas discharge suppressing members 300a and 300b are disposed at portions embedded in the lower electrodes 100 on the first and second gas supply lines 125a and 125b. In addition, the second gas discharge suppressing member 300b is disposed outside the process chamber 10 on the first and second gas supply lines 125a and 125b, in particular, in front of the pressure regulator 126 outside the process chamber 10. Can be placed in.

3 is a perspective view of the gas discharge suppressing member of FIGS. 1 and 2, FIG. 4 is an exploded perspective view of the slit blocks of FIG. 3, and FIGS. 5A to 5C are cross-sectional views of the first to third slit blocks of FIG. 4.

3 to 5C, the gas discharge suppressing members 300a and 300b are disposed on the slit block 320a disposed on the first gas supply line 125a and the second gas supply line 125b. The slit block 320b and the manifold block 340 in which the slit blocks 320a and 320b are embedded are provided. The manifold block 340 may be made of a material such as ceramic, polyether ether ketone (PEEK), or Vespel.

The slit block 320a and the slit block 320b have the same structure. Hereinafter, the slit block 320a will be described as an example. The slit block 320a includes first slit blocks 322a and 322b, second slit blocks 324a, 324b and 324c and three slit blocks 326a and 326b. The first slit block 322a, the third slit block 326a, the first slit block 322b, and the third slit block 326b are arranged in a row alternately on the same axis. The second slit block 324a is disposed between the first slit block 322a and the third slit block 326a, and the second slit block 324a is disposed between the third slit block 326a and the first slit block 322b. The slit block 324c is disposed, and the second slit block 324b is disposed between the first slit block 322b and the third slit block 326b. As described above, the slit block 320a includes the first to third slit blocks 322a, 324a and 326a and the first to third slit blocks 322b, 324b and 326b around the second slit block 324c. The first to third slit blocks 322a, 324a and 326a which have a structure arranged under the same structure and are arranged below the second slit block 324c will be described.

The first to third slit blocks 322a, 324a, and 326a may be provided in a cylindrical shape and are aligned and coupled in a line on the same axis. The first to third slit blocks 322a, 324a, and 326a are provided with longitudinal partition walls 322 ', 324'326' for partitioning the inner space thereof. The partitions 322 'provided in the first slit block 322a are parallel to each other, the partitions 324' provided in the second slit block 324a are also parallel to each other, and the third slit block 326a ) Partition walls 326 'are also parallel to each other.

The second slit block 324a is arranged such that the partitions 324 'provided inside thereof intersect with the partitions 322' provided in the first slit block 322a, and the third slit block 326a The partitions 326 'provided inside are arranged to intersect with the partitions 324' provided in the second slit block 324a. For example, as shown in FIGS. 5A-5C, the partitions 322 ′ of the first slit block 322a are provided in parallel in one direction and the partitions 324 of the second slit block 324a. ') Is provided in a direction perpendicular to the partitions 322' of the first slit block 322a, and the partitions 326 'of the third slit block 326a are partitions of the second slit block 324a. And may be provided in a direction perpendicular to 324 '. In addition, the partitions 326 'of the third slit block 326a may be provided at a position corresponding to the space between the partitions 322' of the first slit block 322a.

The slit blocks 320a and 320b having the above-described structure are installed in the first gas supply line 125a and the second gas supply line 125b, thereby flowing through the first and second gas supply lines 125a and 125b. The discharge of the heat transfer gas can be suppressed. This impinges on the partition walls 322 ', 324', 326 'arranged so that the heat transfer gas supplied through the first and second gas supply lines 125a and 125b cross each other while passing through the slit blocks 320a and 320b. This is because the traveling direction is changed, and the linear movement path of the heat transfer gas is shortened by the length of the partition walls 322 ', 324', and 326 ', and electrons in the heat transfer gas are not sufficiently accelerated. And by suppressing the discharge of the heat transfer gas supplied to the board | substrate W, the temperature of the board | substrate to be plasma-processed can be controlled with high precision.

Referring back to FIG. 1, in the present invention, an upper electrode 200 for supplying a processing gas to the plasma processing space 20 to uniformly distribute the flow of the processing gas while maximizing the plasma reaction using a small amount of the processing gas. Rotation driving unit 400 may be provided to rotate. The rotation drive unit 400 includes a drive source 410 for providing a rotational force, such as a motor, and a drive pulley 420 installed at an output end of the drive source 410, and the drive pulley 420 is connected to the belt member 430 by a medium. It is connected to the shaft member 250 to transfer the rotational force of the drive source 410 to the upper electrode 200. The upper electrode 200 may receive the rotational force of the driving source 410 to be continuously rotated in one of the forward and reverse directions, and may also be rotated alternately in the forward and reverse directions.

Meanwhile, a magnetic field forming mechanism 500 is disposed around the process chamber 10 so that a magnetic field is formed in the plasma processing space 20 in the process chamber 10, and a magnetic field is formed so that the magnetic field formed in the process chamber 10 is rotated. Rotation mechanism 510 is connected to the mechanism 500.

In addition, an exhaust port 610 is formed at a lower end of the process chamber 10 so that the reaction by-product passing through the baffle plate 130 is discharged to the outside of the process chamber 10, and the reaction by-product is provided at the exhaust port 610. An exhaust unit 600 is connected to the pump to maintain the inside of the process chamber 10 in a constant vacuum state.

Referring to the process of plasma processing the substrate using the plasma processing apparatus according to the present invention having the above configuration as follows.

The plasma processing apparatus mounts the semiconductor substrate W on the electrostatic chuck 120, and applies the predetermined DC voltage to the electrode 122 for the electrostatic chuck to suck and hold the semiconductor substrate W, thereby rotating the drive unit 400. The upper electrode 200 is rotated by using the rotation force transmitted by). At this time, the upper electrode 200 may be rotated in any one of the forward direction or the reverse direction, and may also be rotated alternately in the forward direction and the reverse direction. In addition, the processing gas is supplied to the plasma processing space 20 between the upper electrode 200 and the lower electrode 100 through the injection hole 230 of the upper electrode 200 while the upper electrode 200 rotates. At the same time, a high frequency electric power of a predetermined frequency is supplied to the lower electrode 100 to form a high frequency electric field in the plasma processing space 20. In addition, a predetermined magnetic field is formed in the processing space 20 by the magnetic field forming mechanism 500, and the magnetic field is rotated by the rotating mechanism 510 connected to the magnetic field forming mechanism 500. As a result, a predetermined plasma is generated from the processing gas supplied to the plasma processing space 20, and the generated plasma is applied to the substrate W to process the substrate W. At the same time, the heat transfer gas is supplied to the lower surface of the substrate W through the gas injection holes 124a and 124b formed in the electrostatic chuck 120 to adjust the temperature of the substrate W to a predetermined process temperature. In addition, reaction by-products are generated in the plasma processing space 20 during the plasma processing process, and the generated reaction by-products are discharged to the exhaust space 30 around the lower electrode 100 through the baffle plate 130. Thereafter, it is discharged to the outside of the process chamber 10 through the exhaust port 610.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

As described above, according to the present invention, discharge of the heat transfer gas supplied to the substrate can be minimized.

Moreover, according to this invention, the temperature of the board | substrate to be plasma-processed can be controlled with high precision.

Claims (10)

A process chamber in which a substrate processing process is performed; A substrate support member installed inside the process chamber to support a substrate and to which power is applied; And a gas discharge suppression member configured to suppress a discharge of the heat transfer gas supplied to the substrate placed on the substrate support member. The gas discharge suppressing member, And a plurality of slit blocks disposed on the gas supply line for supplying the heat transfer gas and provided with longitudinal partitions for partitioning an internal space. The method of claim 1, The plurality of slit blocks are disposed adjacent to the same axis, And the partition walls of the adjacent slit blocks are provided to intersect with each other. The method of claim 2, And the partition walls provided in the respective slit blocks are arranged in parallel. The method of claim 1, The gas discharge suppressing member, A first slit block partitioning the internal space in a longitudinal direction and having a plurality of first partition walls arranged in parallel; A second slit block connected to one end of the first slit block and having a plurality of second partitions arranged perpendicular to the first partitions; And a third slit block connected to the other end of the first slit block and having a plurality of third partitions arranged perpendicular to the first partitions. The method of claim 4, wherein And the third partitions are disposed at positions corresponding to spaces between the second partitions. The method of claim 1, The gas supply line, A first gas supply line supplying the heat transfer gas to a central portion of the substrate support member; And a second gas supply line configured to supply the heat transfer gas to an edge portion of the substrate support member. And the gas discharge suppressing member is disposed on the first and the second gas supply lines. The method of claim 6, The gas discharge suppressing member, And a first gas discharge suppression member disposed in a portion embedded in the substrate support member of the first and second gas supply lines. The method of claim 7, wherein On the first and the second gas supply line is provided a controller for adjusting the supply pressure of the heat transfer gas, And the gas discharge suppression member further comprises a second gas discharge suppression member disposed in front of the controller on the first and second gas supply lines. The method according to claim 7 or 8, Each of the first and second gas discharge suppression members, A first slit block partitioning the internal space in a longitudinal direction and having a plurality of first partition walls arranged in parallel; A second slit block connected to one end of the first slit block and having a plurality of second partitions arranged perpendicular to the first partitions; And a third slit block connected to the other end of the first slit block and having a plurality of third partitions arranged perpendicularly to the first partitions. The method of claim 9, And the third partitions are disposed at positions corresponding to the spaces between the second partitions.

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