KR20080114422A - Method for inspecting defects on hole patterns of photo mask - Google Patents

Method for inspecting defects on hole patterns of photo mask Download PDF

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Publication number
KR20080114422A
KR20080114422A KR1020070063952A KR20070063952A KR20080114422A KR 20080114422 A KR20080114422 A KR 20080114422A KR 1020070063952 A KR1020070063952 A KR 1020070063952A KR 20070063952 A KR20070063952 A KR 20070063952A KR 20080114422 A KR20080114422 A KR 20080114422A
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KR
South Korea
Prior art keywords
pattern
defect
hole pattern
photomask
defects
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Application number
KR1020070063952A
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Korean (ko)
Inventor
서강준
Original Assignee
주식회사 하이닉스반도체
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Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070063952A priority Critical patent/KR20080114422A/en
Publication of KR20080114422A publication Critical patent/KR20080114422A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Forming a mask pattern providing a hole pattern on the transparent substrate, detecting the transmitted light transmitted through the hole pattern, and compares the detection energy of the transmitted light with the reference energy in the normal state, whether the hole pattern is defective A method of inspecting a hole pattern defect of a photomask for detecting the present invention is provided.

Description

Method for inspecting defects on hole patterns of photo mask}

1 to 3 are diagrams for explaining a hole pattern defect inspection method of a conventional photomask.

4 is a flowchart illustrating a method of inspecting a hole pattern defect of a photomask according to an exemplary embodiment of the present invention.

5 is a view for explaining the hole pattern defect inspection equipment of the photomask according to an embodiment of the present invention.

6 to 9 are views for explaining a hole pattern defect inspection method of the photomask according to an embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to lithography techniques, and more particularly, to a method for inspecting defects for hole patterns of photomasks.

Lithographic techniques have been used to implement circuit patterns of semiconductor devices on wafers. After designing a circuit pattern to be implemented on a wafer, forming a photomask having a designed pattern layout, and performing an exposure process using a photomask, a photoresist pattern conforming to the pattern layout is formed on the wafer. have. Lithography techniques using such photomasks have been used in the manufacture of liquid crystal display devices as well as semiconductor devices. In order to improve the accuracy of pattern transfer in this lithography process, defect control of the photomask is important. Accordingly, a defect inspection process for detecting whether a mask defect is generated in the mask pattern after fabrication of the photomask is performed.

For example, KLA's DUV mask defect inspection equipment using argon (Ar) laser light as inspection light may be used for defect inspection of the photomask. Such mask defect inspection equipment is a smooth and efficient method for setting a detailed option according to the type and mask pattern shape and size of each mask for a photomask from which a resist pattern is removed after formation of a mask pattern. It is configured to inspect the photomask. Nevertheless, when performing defect inspection on the hole pattern of the photomask for forming contact holes of the semiconductor device, it is difficult to accurately detect the defect caused in the actual hole pattern.

FIG. 1 is a diagram illustrating a defect map by a hole pattern defect inspection method of a conventional photomask. FIG. 2 is a diagram illustrating an enlarged region of the defect map of FIG. 1. 3 is a diagram illustrating a defect detection result detected in the defect map of FIG. 1.

1 to 3, a defect map detected by a defect inspection method for a hole pattern of a conventional photomask may be obtained as shown in FIG. 1. At this time, the defect inspection process is performed for the die region 10, and the defect is determined and detected by comparing the inspection result between the inspected die region 10 and another adjacent die region. The photomask having the hole pattern may include not only the hole patterns but also an auxiliary pattern for thin optical compensation (OPC) having a relatively short linear shape. Accordingly, virtual defects that are not substantial defects in the specific region 11 can be detected as detection defects.

Referring to FIG. 2, a pattern that is substantially impossible to form a pattern in an E-beam writing apparatus in a specific region 11, for example, a pattern 23 for optical correction (OPC) of a size that is not exposed on a wafer. For example, defect detection may be undesirably incidental to an assist feature. In the case of the hole pattern, electron beam writing is possible because the width and width of the pattern are approximately 300 nm on the mask. However, in the case of the OPC pattern 23, the width of the linear pattern is about 100 nm, so the accurate pattern is obtained by electron beam writing. It may not be formed into.

Accordingly, defect detection for the OPC pattern 23 can be made. Thus, as shown in FIG. 3, the defect detection result 30 may be indicated as having a very large number, for example, thousands of defects detected. However, since defect detection for the hole pattern is substantially required, a process of extracting a defect result for the hole pattern from the defect detection result 30 is performed. Defects other than the defects detected in association with the actual hole patterns can be judged as defects having no significant effect on the actual wafer pattern formation, and a process of extracting the defects for the actual hole patterns from these results is required.

Since the detected results indicate thousands of defects, it is practically very difficult to search, judge, classify and correct these detected defects manually. In addition, since this process requires a lot of time, effort of the operator and a long operation of the inspection equipment, it can act as an element that undesirably increases the time required to produce the photomask.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a defect inspection method for more accurate defect detection of a hole pattern of a photomask.

One aspect of the present invention for the above technical problem, forming a mask pattern for providing a hole pattern (hole pattern) on a transparent substrate, detecting the transmitted light transmitted through the hole pattern, and the detection of the transmitted light A method of inspecting a hole pattern defect of a photomask, the method including detecting whether a defect with respect to the hole pattern is detected by comparing energy with a reference energy in a steady state.

The mask pattern proposes a hole pattern defect inspection method of a photomask, which is formed to further provide an auxiliary pattern for optical correction (OPC) around the hole pattern.

According to the present invention, it is possible to provide a defect inspection method for more accurate defect detection for the hole pattern (hole pattern) of the photomask.

In an embodiment of the present invention, a defect is detected by comparing a pattern in a measuring die area and an adjacent die area by using a difference value of transmitted light passing through the center of a hole pattern of a photomask, and detecting a defect if a predetermined difference value exists. Provide a test method. At this time, defect detection on the linear pattern or the spatial pattern is excluded. By simply inspecting the hole pattern as described above, the virtual defects caused by the irregular linear pattern are no longer detected so that the defect is detected only when there is an error in the hole pattern. As a result, the total number of defects detected is reduced to several tens to several tens, thereby making it possible to substantially classify and correct defects. Therefore, the reliability of a defect inspection result can be improved more, and manufacture of a mask can be performed correctly quickly.

4 is a flowchart illustrating a method of inspecting a hole pattern defect of a photomask according to an exemplary embodiment of the present invention. 5 is a view for explaining the hole pattern defect inspection equipment of the photomask according to an embodiment of the present invention. 6 is a diagram illustrating a setting applied when inspecting a hole pattern defect according to an exemplary embodiment of the present invention. FIG. 7 is a diagram illustrating a defect map by a hole pattern inspection method of a photomask according to an embodiment of the present invention. FIG. 8 illustrates an enlarged region of the defect map of FIG. 7. 9 is a diagram illustrating a defect detection result detected in the defect map of FIG. 7.

4 and 5, in the hole pattern defect inspection method of the photomask according to the embodiment of the present invention, a photomask for defect inspection is first manufactured (101 in FIG. 4). For example, the mask pattern 220 is formed on the transparent substrate 210 (see FIG. 5). The mask pattern 220 may include a chromium (Cr) light shielding layer or a phase inversion layer under the light shielding layer. The mask pattern 220 may be patterned into a pattern that provides the hole pattern 230, and may be formed around the hole pattern 230 to provide a pattern 240 or an auxiliary pattern for optical correction (OPC). After removing the resist pattern used for the patterning, the photomask 200 is mounted on the mask defect inspection equipment 300.

The mask defect inspection equipment 300 irradiates incident light for measurement to the rear surface of the mounted photomask 200, and detects the transmitted light transmitted through the center of the hole pattern 230 through the measuring unit 310. At this time, the measurement unit 310 detects the energy of the transmitted light. The defect detection process in the measurement unit 310 is to be controlled by the control unit 330. Therefore, the defect detection process may first include a process of setting a test program or algorithm for the defect detection process in the controller 330.

Specifically, the photomask 200 is mounted on a stage plate of the defect inspection equipment 300 using DUV light, such as KLA mask defect inspection equipment, and aligned using an alignment key. . Thereafter, an inspection program and inspection sensitivity suitable for the hole pattern 230 to be inspected are set as shown in the control panel 331 of FIG. 6. At this time, the first program 333, which is represented as litho2 to be used for defect inspection of the hole pattern 230, uses a difference value between the transmitted light passing through the center of the hole pattern 230 and the measurement die area. Algorithms are configured or programmed to compare patterns in adjacent die areas and detect them as defects if a difference is greater than a certain amount. Therefore, only the sensitivity value corresponding to the first program 333 in the control panel 331 is set to an effective value, for example, 90 (%).

At this time, the second defect detection second program 335 selectable in the control panel 331 of the mask defect inspection equipment does not set the measurement sensitivity so that the actual measurement is excluded. The second programs 335 set to HiRes1 or 2 in the control panel 331 are programs for detecting defects in a linear pattern or a spatial pattern and detecting defects in the form of small holes or dots, respectively. It is set. In the exemplary embodiment of the present invention, the process of detecting a defect such as a defect or a dot shape with respect to the linear pattern or the spatial pattern is excluded. Is not derived. When the defect detection by the second program 335 is introduced, defect detection on the auxiliary pattern 240 is substantially performed, resulting in a large number of unwanted defect detection results. In such a case, defect analysis, classification, and the like are practically difficult, so that defect detection for linear patterns, spatial patterns, or point shape defects is excluded.

Therefore, in the defect detection of the hole pattern 230 according to the embodiment of the present invention, the defect is detected using a difference value of transmitted light passing through the center of the hole pattern 230. Specifically, the detection value T is set to ΔE / ((E reference -E test ) / 2). At this time, the E reference is set as a reference value by the energy of the transmitted light passing through the hole pattern of the normal pattern.

In actual measurement, it can be set to the measured transmitted light energy in another die area adjacent to the die area to be measured. The E test refers to a test, that is, a value measured as energy of transmitted light passing through a hole pattern of a die area to be measured. ΔE is set to the value of (E criterion -E test ). If the detected value T is greater than or equal to a set threshold, it is detected as a defect. The detection value T substantially depends on the measurement sensitivity and has a relationship of decreasing linearly from approximately 30 (%) to 4 (%) when the sensitivity changes from 1 (%) to 100 (%). Therefore, when the sensitivity approaches 100%, the T value becomes small and smaller defects can be detected. In addition, by setting the sensitivity value in the control panel 331 of FIG. 6, the size of a defect to be detected can be set.

Referring to FIGS. 4 and 5 again, the transmitted light transmitted through the hole pattern 230 is detected as described above (103 in FIG. 4), and the detection energy of the transmitted light is compared with the reference energy in the steady state by the controller 330. By detecting the defect on the hole pattern (Fig. 105). The detected result may be obtained for each measurement die area 401 as in the defect map 400 shown in FIG. 7. At this time, considering the drawing of FIG. 8 in which the area 410 of FIG. 7 is enlarged, the result 411 for the hole pattern 230 is obtained by eliminating defect detection for the auxiliary pattern 240 (in FIG. 5). .

When the inspection is performed for the entire photomask, the number of defects detected can be obtained with values within approximately 100, such as the defect result 421 in the detection result list 420 shown in FIG. In this way, by detecting false defects related to the auxiliary pattern 240 and the like other than the hole pattern 230, only the defects related to the hole pattern 230 are detected, thereby substantially reducing the number of defects detected. . Thus, the defect classification and correction process can be performed in a faster time, so that a more accurate photomask can be produced in a faster time.

According to the present invention described above, it is possible to accurately perform the defect inspection for the hole pattern at a faster time when manufacturing the photomask. Accordingly, the defect correction of the photomask can be performed efficiently within a faster time, thereby realizing an improvement in the productivity and accuracy of the production of the photomask.

As mentioned above, although this invention was demonstrated in detail through the specific Example, this invention is not limited to this, It is clear that the deformation | transformation and improvement are possible by the person of ordinary skill in the art within the technical idea of this invention.

Claims (2)

Forming a mask pattern providing a hole pattern on the transparent substrate; Detecting the transmitted light passing through the hole pattern; And And detecting a defect in the hole pattern by comparing the detection energy of the transmitted light with a reference energy in a normal state. The method of claim 1, And the mask pattern is formed to further provide an auxiliary pattern for optical correction (OPC) around the hole pattern.
KR1020070063952A 2007-06-27 2007-06-27 Method for inspecting defects on hole patterns of photo mask KR20080114422A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150094134A (en) 2014-02-10 2015-08-19 엘지전자 주식회사 Footrest of vehicle and control method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150094134A (en) 2014-02-10 2015-08-19 엘지전자 주식회사 Footrest of vehicle and control method thereof

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