KR20080109107A - Display substrate and method of manufacturing the same - Google Patents

Display substrate and method of manufacturing the same Download PDF

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Publication number
KR20080109107A
KR20080109107A KR1020070056984A KR20070056984A KR20080109107A KR 20080109107 A KR20080109107 A KR 20080109107A KR 1020070056984 A KR1020070056984 A KR 1020070056984A KR 20070056984 A KR20070056984 A KR 20070056984A KR 20080109107 A KR20080109107 A KR 20080109107A
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KR
South Korea
Prior art keywords
layer
metal pattern
inorganic
pixel
pixel electrode
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KR1020070056984A
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Korean (ko)
Inventor
신용환
전백균
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삼성전자주식회사
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Priority to KR1020070056984A priority Critical patent/KR20080109107A/en
Publication of KR20080109107A publication Critical patent/KR20080109107A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133734—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by obliquely evaporated films, e.g. Si or SiO2 films
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Abstract

The display substrate includes a pixel structure formed on an insulating substrate, a color filter layer formed on the pixel structure, a pixel electrode formed on the color filter layer corresponding to each pixel, and an inorganic alignment layer formed on the pixel electrode. The inorganic alignment film has a plane shape substantially the same as that of the pixel electrode. The inorganic insulating layer may include silicon oxide (SiOx). The inorganic insulating film and the pixel electrode are formed through one mask process. As such, the stability of the liquid crystal alignment layer may be improved by using the inorganic alignment layer, and the manufacturing cost may be reduced by forming the pixel electrode and the inorganic alignment layer through one mask process.

Description

DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME}

1 is a plan view illustrating a display substrate according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 to 9 are cross-sectional views for describing a manufacturing process of the display substrate illustrated in FIGS. 1 and 2.

<Explanation of symbols for the main parts of the drawings>

100: display substrate 130: color filter layer

140 pixel electrode 150 inorganic alignment film

200: pixel structure 210: first metal pattern

220: first insulating film 230: second metal pattern

240: second insulating film

The present invention relates to a display substrate and a method for manufacturing the same, and more particularly, to a display substrate used in a liquid crystal display device for displaying an image and a method for manufacturing the same.

A liquid crystal display for displaying an image includes a thin film transistor substrate, a color filter substrate coupled to face the thin film transistor substrate, and a liquid crystal layer disposed between the two substrates.

The thin film transistor substrate includes signal wirings, thin film transistors, and pixel electrodes formed on an insulating substrate to independently drive a plurality of pixels, and the color filter substrate includes red (R), green (G), and blue (B) colors. A color filter layer including color filters and a common electrode facing the pixel electrode are included.

The liquid crystal included in the liquid crystal layer serves as a switch for transmitting or blocking light. The liquid crystal is arranged in a predetermined direction by a liquid crystal alignment layer formed on the thin film transistor substrate and the color filter substrate, and controls the direction of light by an electric field formed by the pixel electrode and the common electrode.

The liquid crystal alignment layer may be classified into a horizontal alignment layer and a vertical alignment layer, and the horizontal and vertical alignment layers generally use a polyimide-based material.

However, the polyimide-based liquid crystal alignment film has a problem in that it is insufficient in stability to heat and light.

Accordingly, the present invention has been made in view of such a problem, and the present invention provides a display substrate capable of improving the stability of the liquid crystal alignment film.

Moreover, this invention provides the manufacturing method of said display substrate.

According to an aspect of the present invention, a display substrate includes a pixel structure formed on an insulating substrate, a color filter layer formed on the pixel structure, a pixel electrode formed on the color filter layer corresponding to each pixel, and an inorganic formed on the pixel electrode. An alignment film is included. The inorganic alignment layer has a plane shape substantially the same as that of the pixel electrode. The inorganic insulating layer may include silicon oxide (SiOx). The inorganic insulating layer may be formed to a thickness of 50nm ~ 300nm.

The pixel structure includes a first metal pattern, a first insulating layer, a second metal pattern, and a second insulating layer. The first metal pattern is formed on the insulating substrate and includes a gate line and a gate electrode connected to the gate line. The first insulating layer is formed to cover the first metal pattern on the insulating substrate on which the first metal pattern is formed. The second metal pattern is formed on the first insulating layer, and includes a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode and electrically connected to the pixel electrode. do. The second insulating layer is formed to cover the second metal pattern on the insulating substrate on which the second metal pattern is formed.

The display substrate may be formed on a metal pad electrically connected to an end of at least one of the gate line and the data line, and formed on the metal pad to be in direct contact with the metal pad. It further includes a conductive pad.

According to the method of manufacturing a display substrate according to an aspect of the present invention, a pixel structure is formed on an insulating substrate. A color filter layer is formed on the pixel structure. Through one mask process, a pixel electrode formed on the color filter layer and an inorganic alignment layer having substantially the same planar shape as the pixel electrode are formed on the pixel electrode corresponding to each pixel.

In order to form the pixel structure, a first metal pattern including a gate line and a gate electrode connected to the gate line is formed on the insulating substrate. A first insulating layer is formed on the insulating substrate on which the first metal pattern is formed to cover the first metal pattern. A second metal pattern is formed on the first insulating layer including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode. A second insulating layer is formed on the insulating substrate on which the second metal pattern is formed to cover the second metal pattern.

In order to form the pixel electrode and the inorganic alignment layer, a transparent conductive layer and an inorganic layer are sequentially formed on the color filter layer. A photoresist pattern having a first thickness in the pad region and a second thickness thicker than the first thickness in the pixel electrode region is formed on the inorganic layer. The inorganic layer and the transparent conductive layer are patterned to form the pixel electrode and the inorganic insulating layer in an active region, and formed on a metal pad connected to at least one end of the gate and data lines in the pad region. Form a conductive pad in direct contact with the. The photoresist pattern is ashed to expose the inorganic layer of the pad region. The inorganic layer exposed in the pad area is etched. Strip the ashed photoresist pattern.

According to such a display substrate and a method of manufacturing the same, the manufacturing process is simplified by improving the stability of the liquid crystal alignment layer using the inorganic alignment layer and forming the pixel electrode and the inorganic alignment layer through one mask process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the present invention to those skilled in the art. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have a variety of additional devices not described herein. When (layer) is mentioned as being located on another film (layer) or substrate, an additional film (layer) may be formed directly on or between the other film (layer) or substrate.

1 is a plan view illustrating a display substrate according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, the display substrate 100 according to an exemplary embodiment of the present invention may include an insulating substrate 110, a pixel structure 200, a color filter layer 130, a pixel electrode 140, and an inorganic alignment layer ( 150).

The insulating substrate 110 is formed of, for example, transparent glass or plastic.

The pixel structure 200 is formed on the insulating substrate 110. The pixel structure 200 may include a first metal pattern 210, a first insulating layer 220, a second metal pattern 230, and a second insulating layer 240.

The first metal pattern 210 is formed on the insulating substrate 110. The first metal pattern 210 includes a gate line 212 and a gate electrode 214 electrically connected to the gate line 212. The gate line 212 extends in the horizontal direction, for example. The gate electrode 214 performs a gate terminal function of the thin film transistor TFT.

The first metal pattern 210 is formed of, for example, a Mo / Al two-layer film structure in which aluminum (Al) and molybdenum (Mo) are sequentially stacked. In contrast, the first metal pattern 210 includes aluminum (Al), molybdenum (Mo), neodymium (Nd), chromium (Cr), tantalum (Ta), titanium (Ti), tungsten (W), and copper (Cu). A single metal such as silver (Ag) or an alloy thereof may be formed of one layer or a plurality of layers.

The first insulating layer 220 is formed to cover the first metal pattern 210 on the insulating substrate 110 on which the first metal pattern 210 is formed. The first insulating layer 220 is an insulating layer for protecting and insulating the first metal pattern 210, and is formed of, for example, silicon nitride (SiNx) or silicon oxide (SiOx).

The second metal pattern 230 is formed on the first insulating layer 220. The second metal pattern 230 may include a data line 232, a source electrode 234 connected to the data line 232, and a drain electrode 236 spaced apart from the source electrode 234. The data line 232 is insulated from the gate line 212 through the first insulating layer 220, and is formed to extend in a direction crossing the gate line 212. For example, the data line 232 extends vertically to vertically intersect the gate line 212. The source electrode 234 extends from the data line 232 such that at least a portion overlaps the gate electrode 214. The source electrode 234 performs a source terminal function of the thin film transistor TFT. The drain electrode 236 is formed to be spaced apart from the source electrode 234 at a predetermined interval, and at least a portion thereof is formed to overlap the gate electrode 214. The drain electrode 236 performs a drain terminal function of the thin film transistor TFT.

The second metal pattern 230 is formed of, for example, a Mo / Al / Mo three-layer film structure in which a lower molybdenum layer, an aluminum layer, and an upper molybdenum layer are sequentially stacked. In contrast, the second metal pattern 230 includes aluminum (Al), molybdenum (Mo), neodymium (Nd), chromium (Cr), tantalum (Ta), titanium (Ti), tungsten (W), and copper (Cu). A single metal such as silver (Ag) or an alloy thereof may be formed of one layer or a plurality of layers.

The display substrate 100 may further include an active pattern 250 formed between the first insulating layer 220 and the second metal pattern 230 to form the thin film transistor TFT. The active pattern 250 and the second metal pattern 230 may be formed through a single mask process using a slit mask or a half-tone mask to reduce the number of mask processes. As such, when the active pattern 250 and the second metal pattern 230 are formed through one mask process, the active pattern 250 may have a first planar shape substantially the same as that of the second metal pattern 230. The insulating layer 220 is disposed between the second metal pattern 230.

On the other hand, when the mask for forming the active pattern 250 and the mask for forming the second metal pattern 230 are taken differently, the active pattern 250 may be formed only at a portion overlapping with the gate electrode 214. .

The active pattern 250 may include a semiconductor pattern 252 and an ohmic contact pattern 254. The semiconductor pattern 252 substantially serves as a channel through which current flows, and the ohmic contact pattern 254 reduces contact resistance between the semiconductor pattern 252 and the source electrode 234 and the drain electrode 236. Perform. For example, the semiconductor pattern 252 is formed of amorphous silicon (a-Si), and the ohmic contact pattern 254 is n + amorphous silicon (n + a, hereinafter n + a) doped with a high concentration of n-type impurities. -Si).

Accordingly, the thin film transistor TFT including the gate electrode 214, the active pattern 250, the source electrode 234, and the drain electrode 236 is formed on the insulating substrate 110 of the display substrate 100. The thin film transistor TFT applies a pixel voltage applied through the data line 232 to the pixel electrode 140 in response to a gate voltage applied through the gate line 212.

The second insulating layer 240 is formed to cover the second metal pattern 230 on the insulating substrate 110 on which the second metal pattern 230 is formed. The second insulating layer 240 is an insulating layer for protecting and insulating the second metal pattern 230, and is formed of, for example, silicon nitride (SiNx) or silicon oxide (SiOx).

The pixel structure 200 may further include a storage electrode 216. The storage electrode 216 is formed from a metal layer for forming the first metal pattern 210. The storage electrode 216 extends in a direction parallel to the gate lines 212, for example, between the gate lines 212.

The storage electrode 212 forms a storage capacitor Cst to face the pixel electrode 140 with the first insulating layer 220 and the second insulating layer 240 therebetween. Therefore, the pixel voltage applied to the pixel electrode 140 through the thin film transistor TFT is maintained for one frame by the storage capacitor Cst.

The color filter layer 130 is formed on the pixel structure 200. The color filter layer 130 includes red, green, and blue color filters formed to correspond to each pixel. For example, the red, green, and blue color filters have a structure in which pigments of red, green, and blue are respectively included in the photosensitive organic composition. The red, green, and blue color filters are regularly formed on the second insulating layer 240 to have a predetermined pattern. For example, the red, green, and blue color filters are sequentially arranged along the horizontal direction or the vertical direction such that one color color filter corresponds to each pixel.

The color filter layer 130 may be formed to have a relatively thick thickness to planarize the surface of the display substrate 100. For example, the color filter layer 130 is formed to a thickness of about 2.5㎛ 3.5㎛.

The color filter layer 130 may include a storage hole 132 exposing at least a portion of the pixel structure 200 corresponding to the position where the storage electrode 216 is formed. Since the distance between the storage electrode 216 and the pixel electrode 140 is closer through the storage hole 132, the capacitance of the storage capacitor Cst is increased.

The pixel electrode 140 is formed on the color filter layer 130 corresponding to each pixel. The pixel electrode 140 is made of a transparent conductive material through which light can pass. For example, the pixel electrode 140 is formed of indium zinc oxide (IZO) or indium tin oxide (ITO).

The pixel electrode 140 is electrically connected to the drain electrode 236 of the thin film transistor TFT. In order to connect the pixel electrode 140 and the drain electrode 236, a contact hole CNT is formed in the second insulating layer 240 and the color filter layer 130. The pixel electrode 140 is electrically connected to the drain electrode 236 through the contact hole CNT.

The pixel electrode 140 overlaps the storage electrode 216 in the storage hole 132 region of the color filter layer 130 with the second insulating film 240 and the first insulating film 220 interposed therebetween, so that the storage capacitor Cst To form.

The pixel electrode 140 may have a specific opening pattern for dividing each pixel into a plurality of domains to implement a wide viewing angle. In addition, the pixel electrode 140 may have a structure divided into a main electrode and a sub electrode to which different voltages are applied. As such, when the pixel electrode 140 is divided into a main electrode and a sub electrode, two pixels may be formed in each pixel, respectively, connected to the main electrode and the sub electrode.

The inorganic alignment layer 150 is formed on the pixel electrode 140. The inorganic alignment layer 150 is formed of an inorganic material having excellent stability to heat and light as compared to organic materials and easily depositing a large area. The inorganic material applied to the inorganic alignment layer 150 has an electrically insulating property and is preferably made of a transparent material in order to prevent a decrease in light transmittance. In addition, the inorganic material applied to the inorganic alignment layer 150 preferably has hydrophilic surface properties for the liquid crystal alignment, and may be formed to have a thickness of about 50 nm to about 300 nm. For example, the inorganic alignment layer 150 may include an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx).

In order to reduce the number of mask processes, the inorganic alignment layer 150 and the pixel electrode 140 are formed through one mask process using a slit mask or a half-tone mask. As such, when the inorganic alignment layer 150 and the pixel electrode 140 are formed through one mask process, the inorganic alignment layer 150 may be formed on the pixel electrode 140 to have substantially the same planar shape as the pixel electrode 140. Is formed.

The display substrate 100 may further include a gate pad part GP electrically connected to an end of the gate line 212 and a data pad part DP electrically connected to an end of the data line 232.

The data pad part DP includes a data metal pad 238 and a data conductive pad 142. The data metal pad 238 is electrically connected to an end of the data line 232. The data metal pad 238 is formed from a metal layer for forming the second metal pattern 230. The data conductive pad 142 is formed on the data metal pad 238 to be in direct contact with the data metal pad 238. The data conductive pad 142 is formed from a transparent conductive film for forming the pixel electrode 140.

The gate pad part GP may include a gate metal pad 218 formed on the insulating substrate 110, and the gate conductive pad 144 may be in direct contact with the gate metal pad 216 on the gate metal pad 216. Since it has a structure substantially similar to the data pad (DP), a detailed description thereof will be omitted.

Hereinafter, a method of manufacturing the display substrate illustrated in FIGS. 1 and 2 will be described with reference to FIGS. 3 and 9.

3 to 9 are cross-sectional views for describing a manufacturing process of the display substrate illustrated in FIGS. 1 and 2.

1 and 3, a substrate including a gate line 212, a gate electrode 214 of a thin film transistor TFT, a storage electrode 216, and a gate metal pad 218 on an insulating substrate 110. 1 metal pattern 210 is formed. The gate electrode 214 is electrically connected to the gate line 212, and the storage electrode 216 is electrically separated from the gate line 212 and the gate electrode 214.

The first metal pattern 210 has, for example, a Mo / Al two-layer film structure in which an aluminum layer and a molybdenum layer are sequentially stacked. In contrast, the first metal pattern 210 includes aluminum (Al), molybdenum (Mo), neodymium (Nd), chromium (Cr), tantalum (Ta), titanium (Ti), tungsten (W), and copper (Cu). A single metal such as silver (Ag) or an alloy thereof may be formed of one layer or a plurality of layers.

1 and 4, the first insulating layer 220 is formed on the insulating substrate 110 on which the first metal pattern 210 is formed to cover the first metal pattern 210. For example, the first insulating layer 220 is formed of silicon nitride (SiNx) or silicon oxide (SiOx) and has a thickness of about 1500 kV to 2500 kPa.

An active pattern 250, a data line 232, a source electrode 234 and a drain electrode 236 of the TFT, and a data metal pad 238 on the first insulating layer 220. 2 to form a metal pattern (230). The active pattern 250 and the second metal pattern 230 may be patterned through one mask process using one mask. When the active pattern 250 and the second metal pattern 230 are patterned by one mask process, the active pattern 250 is substantially formed in the same planar shape as the second metal pattern 230. That is, the active pattern 250 is formed between the first insulating film 220 and the second metal pattern 230. In contrast, the active pattern 250 and the second metal pattern 230 may be patterned through two mask processes using two different masks. When the active pattern 250 and the second metal pattern 230 are patterned through two mask processes, the active pattern 250 may be formed only at a portion overlapping with the gate electrode 214.

The active pattern 250 may include a semiconductor layer 252 and an ohmic contact layer 254. For example, the semiconductor layer 252 is formed of amorphous silicon (a-Si), and the ohmic contact layer 254 is made of n + amorphous silicon (n + a-Si) doped with a high concentration of n-type impurities. Is formed.

The source electrode 234 is electrically connected to the data line 232, and the drain electrode 236 is spaced apart from the source electrode 234 on the gate electrode 214 to form a channel of the thin film transistor TFT. Is formed.

The second metal pattern 230 is formed of, for example, a Mo / Al / Mo three-layer film structure in which a lower molybdenum layer, an aluminum layer, and an upper molybdenum layer are sequentially stacked. In contrast, the second metal pattern 230 includes aluminum (Al), molybdenum (Mo), neodymium (Nd), chromium (Cr), tantalum (Ta), titanium (Ti), tungsten (W), and copper (Cu). A single metal such as silver (Ag) or an alloy thereof may be formed of one layer or a plurality of layers.

Meanwhile, the ohmic contact layer 254 of the channel portion corresponding to the source electrode 234 and the drain electrode 236 is removed to form the thin film transistor TFT.

1 and 5, the second insulating layer 240 is formed on the insulating substrate 110 on which the second metal pattern 230 is formed to cover the second metal pattern 230. The second insulating layer 240 is formed of, for example, silicon nitride (SiNx) or silicon oxide (SiOx), and has a thickness of about 500 kPa to 2000 kPa. Thus, the manufacturing of the pixel structure 200 is completed.

The color filter layer 130 is formed on the pixel structure 200. The color filter layer 130 includes red, green, and blue color filters. The red, green, and blue color filters are sequentially formed to correspond to each pixel.

Subsequently, a storage hole 132 and a first contact hole CNT1 are formed in each of the red, green, and blue color filters. The storage hole 132 exposes a portion of the pixel structure 200 corresponding to the storage electrode 216. The first contact hole CNT1 exposes a portion of the pixel structure 200 corresponding to the drain electrode 236.

Next, a second contact hole CNT2 exposing a part of the drain electrode 236 and a third contact hole CNT3 exposing a part of the data metal pad 238 are formed in the second insulating layer 240.

1 and 6, an inorganic layer for forming the transparent conductive layer 140a for forming the pixel electrode 140 and the inorganic alignment layer 150 on the insulating substrate 110 on which the color filter layer 130 is formed. 150a are sequentially formed.

In order to pattern the inorganic film 150a and the transparent conductive film 140a through a single mask process, a photoresist pattern PRa is formed on the inorganic film 150a. The photoresist pattern PRa has a first thickness in the pad region where the data metal pad 238 is formed, and has a second thickness thicker than the first thickness in the pixel electrode region where the pixel electrode 140 is to be formed.

1 and 7, the inorganic layer 150a and the pixel electrode 140 are patterned in the active region by patterning the inorganic layer 150a and the transparent conductive layer 140a using the photoresist pattern PRa as an etch stop layer. And a conductive pad 142 in direct contact with the data metal pad 238 in the pad region.

7 and 8, an ashing process of reducing the photoresist pattern PRa by a predetermined thickness is performed to expose the inorganic layer 150b remaining in the pad region. The ashed photoresist pattern PRb reduced by a predetermined thickness remains on the inorganic alignment layer 150 through the ashing process of the photoresist pattern PRa.

8 and 9, the inorganic layer 150b exposed in the pad area is etched and removed using the ashed photoresist pattern PRb as an etch stop layer.

Subsequently, when the ashed photoresist pattern PRb remaining on the inorganic alignment layer 150 is stripped, the display substrate 100 illustrated in FIG. 2 is manufactured.

According to such a display substrate and its manufacturing method, by using an inorganic alignment film as a liquid crystal aligning film, stability to heat and light can be improved. In addition, the manufacturing cost can be reduced by patterning the inorganic alignment layer and the pixel electrode through one mask process.

In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

Claims (9)

A pixel structure formed on the insulating substrate; A color filter layer formed on the pixel structure; A pixel electrode formed on the color filter layer corresponding to each pixel; And And an inorganic alignment layer formed on the pixel electrode and having a plane shape substantially the same as that of the pixel electrode. The display substrate of claim 1, wherein the inorganic insulating layer comprises silicon oxide (SiOx). The display substrate of claim 2, wherein the inorganic insulating layer has a thickness of about 50 nm to about 300 nm. The method of claim 1, wherein the pixel structure, A first metal pattern formed on the insulating substrate and including a gate line and a gate electrode connected to the gate line; A first insulating film formed on the insulating substrate on which the first metal pattern is formed to cover the first metal pattern; A second metal pattern formed on the first insulating layer and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode and electrically connected to the pixel electrode; And And a second insulating layer formed on the insulating substrate on which the second metal pattern is formed to cover the second metal pattern. The method of claim 4, wherein A metal pad electrically connected to an end of at least one of the gate line and the data line; And And a conductive pad formed on the metal pad and in direct contact with the metal pad, the conductive pad being formed from a conductive layer for forming the pixel electrode. Forming a pixel structure on the insulating substrate; Forming a color filter layer on the pixel structure; And Forming a pixel electrode formed on the color filter layer corresponding to each pixel and an inorganic alignment layer having the same planar shape as the pixel electrode on the pixel electrode through one mask process; Manufacturing method. The method of claim 6, wherein the forming of the pixel structure comprises: Forming a first metal pattern on the insulating substrate, the first metal pattern including a gate line and a gate electrode connected to the gate line; Forming a first insulating film on the insulating substrate on which the first metal pattern is formed to cover the first metal pattern; Forming a second metal pattern on the first insulating layer, the second metal pattern including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode spaced apart from the source electrode; And And forming a second insulating layer on the insulating substrate on which the second metal pattern is formed to cover the second metal pattern. The method of claim 7, wherein the forming of the pixel electrode and the inorganic alignment layer, Sequentially forming a transparent conductive film and an inorganic film on the color filter layer; Forming a photoresist pattern on the inorganic layer, the photoresist pattern having a first thickness in a pad region and a second thickness thicker than the first thickness in a pixel electrode region; The inorganic layer and the transparent conductive layer are patterned to form the pixel electrode and the inorganic insulating layer in an active region, and formed on a metal pad connected to at least one end of the gate and data lines in the pad region. Forming a conductive pad in direct contact with the; Ashing the photoresist pattern to expose the inorganic layer in the pad region; Etching the inorganic layer exposed in the pad area; And And stripping the ashed photoresist pattern. The method of claim 8, wherein the inorganic insulating layer comprises silicon oxide (SiOx).
KR1020070056984A 2007-06-12 2007-06-12 Display substrate and method of manufacturing the same KR20080109107A (en)

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