KR20080095413A - Twin target sputter system for thin film passivation and method of forming a film using the same - Google Patents

Abstract

A twin target sputter system for thin film passivation and a method of forming a film using the same are provided to perform a plasma damage free sputter process by arranging a trapezoid magnet at the center to increase plasma density and to achieve fast formation of thin film. A twin target sputter system for thin film passivation comprises a vacuum chamber, a substrate supporting unit for supporting a substrate(401) in the vacuum chamber, a yoke plate directed to the substrate, a pair of sputter gun consisting of plural magnets disposed regularly at the yoke plate, targets(310) mounted respectively on the pair of yoke plates, a gun supporting unit for supporting a pair of spatter guns, a power supplier for supplying current to the target.

Description

Twin target sputter system for thin film passivation and method of forming a film using the same}

1 is a view for explaining the concept of a magnetron device,

2 is a conventional box-type target facing sputtering assembly,

3 is a configuration diagram of a conventional counter target sputtering apparatus;

4 is a view showing a state in which an inorganic thin film having a conventional ceramic characteristic is formed on an organic light emitting device or an organic transistor instead of a metal can or a glass substrate;

5 is a view showing a coating layer made by a conventional thin film encapsulation method,

6 is a view showing a coating layer made by a conventional multi-layer thin film encapsulation method,

7 is a view showing an example of a plasma damage-free sputter gun having a ladder-shaped magnet array according to the present invention,

8 is a diagram showing a magnetic flux density distribution of a target center part;

9 is a configuration diagram of a twin target sputter system for thin film encapsulation according to the present invention;

10 is a configuration diagram of a twin target sputter system scanned by a gun module according to the present invention;

11 is a configuration diagram mounted inside the system a number of modular twin target gun according to the present invention,

12 is a view showing a twin target sputter system capable of thin film encapsulation using a multi-layer,

13 is a view showing an example using a twin target sputter according to the present invention in a hybrid thin film bag,

14 is a graph showing a life comparison of a thin film encapsulated OLED and a reference sample OLED using a twin target sputter according to the present invention.

The present invention relates to a sputtering system for thin film passivation and a film forming method using the same, by generating high-density plasma between targets having the same shape facing each other.

Sputtering, also commonly referred to as physical vapor deposition (PVD), is the most widely used method of depositing layers of metals and related materials in the manufacture of integrated circuits. This sputtering is the deposition of a planar layer of target material on a specimen, the sputtering rate being increased by using a magnetron 10 located behind the sputtering target 12, as shown schematically in FIG. It is known that it can be improved. The magnetron projects the magnetic field 14 across the surface of the target 12 to trap electrons and increase the plasma density. Such a magnetron 10 typically includes two magnets 16,18 of non-balanced magnetic poles perpendicular to the surface of the target 12, and the magnetic yoke 20 has two magnets ( 16, 18) is a structure that supports and magnetically connects.

Further, a target facing sputtering apparatus including a box-shaped target facing sputtering assembly as shown in FIG. 2 is disclosed, for example, in US Pat. No. 6,164,172.

The box-shaped target facing sputtering assembly 70 shown in FIG. 2 has four sides 71a in which the target units 110a and 110b are formed adjacent to an opening surface 71f serving as an opening of the cuboid frame 71. 71 d) (71f of the open face of the rectangular parallelepiped frame 71

It is attached to the opposing faces 71a and 71b among five faces 71a-71e except for this, and the three faces 71c-71e are comprised so that it may be closed by the closing plates 72c-72e, respectively. The target unit 100a includes a magnetic field generating means formed by the target 110a and the permanent magnets installed around the target 110a, and the target unit 100b is formed by the magnetic field formed by the target and the permanent magnets installed around the target. Generating means. This box-type target facing sputtering apparatus is connected to the vacuum chamber so that its open face 71f faces the vacuum chamber, and the substrate on which the thin film is to be formed is disposed in the vacuum chamber so as to face the open face 71f. It is a structure.

In addition, an example of a method of manufacturing an organic light emitting device using an opposing target sputtering apparatus is disclosed in Korean Patent Laid-Open No. 2006-0064702 (June 13, 2006).

That is, in the Published Patent Publication No. 2006-0064702, as shown in FIG. 3, the counter-target sputtering apparatus will be described with reference to FIG. 3. It includes a reaction gas supply unit 130 for supplying an oxygen gas, and a pump 120 for forming the inside of the chamber 100 in a low pressure vacuum state, the inside of the chamber 100 facing each other (Mirror) shape Targets 200 and 210 are provided, and the target 200 and 210 are disclosed in a structure in which a negative power is applied independently or in parallel.

A uniform magnetic field is formed in the same direction between the targets 200 and 210 shown in FIG. 3, and a region having a weak positive value with a constant voltage is formed in the center between the targets 200 and 210. At the rear of the two targets 200 and 210, the plate magnets 220 and 230 are installed to face different polarities to form a uniform magnetic field in the space between the targets 200 and 210. In addition, the configuration of the magnets 220 and 230 may be arranged using a plurality of pellet-shaped magnets 220 and 230 or a rod-shaped magnet 220 and 230, or the electromagnets 220 and 230. It is a structure that controls the magnetic field by using.

In addition, when a sputtering source including two targets 200 and 210 is formed to be movable, an electrode film may be formed on the entire surface of the large substrate 110 on which the organic layer including the emission layer is formed by moving the sputtering source and scanning. Installing the shield 240 around the two targets 200 and 210 of the sputtering source can prevent the target 200 and 210 materials from being released in a direction outside the substrate 110 and release the laminated material on only one side. As such, a structure for constructing a kind of 'sputtering gun' is disclosed.

In addition, in order to fabricate an organic light emitting device or an organic transistor, an encapsulation process for protecting the device from preventing oxygen or moisture from entering the organic thin film is essential.

In general, the organic thin film used in the organic light emitting device or the transistor reacts with moisture or oxygen gas in the air to deteriorate the material. In order to prevent this, the encapsulation process is performed using a metal can or a thin glass substrate.

However, when the encapsulation process is performed using a metal can or a glass substrate, not only the device fabrication process is complicated, but also the device fabrication time is long, and an encapsulation process for manufacturing a large area organic light emitting device or an organic transistor is required. As equipment is not being developed, it is a problem. In order to solve this problem, as shown in FIG. 4, an inorganic thin film having a transparent ceramic property, such as a glass substrate, is deposited on an organic light emitting device or an organic transistor instead of a metal can or a glass substrate to replace the conventional encapsulation process through a thin thin film. Thin film encapsulation method is in the spotlight as a new encapsulation process.

In order to carry out the thin film encapsulation, SiO _x was used by chemical vapor deposition such as plasma chemical vapor deposition (PECVD), inductively coupled chemical vapor deposition (ICP-CVD), plasma atomic layer deposition (PEALD), and physical vapor deposition such as RF / DC sputtering. In order to improve the properties by depositing inorganic thin films such as SiN _x , SiON _x , and Al ₂ O ₃ on organic light emitting devices, most of the methods use plasma to damage organic light emitting devices due to plasma exposure. I have a problem.

In particular, "Barix multilayr coater" of Vitex, USA, the most popular thin film encapsulation method, coats Al ₂ O ₃ thin film by reactive sputtering method using DC sputter equipped with Al target. This method shown in Figure 5 generates a plasma, Ar ions present in the plasma collide with the Al target to sputter Al, the sputtered Al particles react with the oxygen process gas and the Al ₂ O ₃ on the organic light emitting device A thin film is formed, in which high-energy particles are present inside the plasma and sputtered Al particles also have high energy, which affects the characteristics of the organic light emitting device.

Such high energy particles collide with the substrate to transfer energy, which may cause the temperature of the substrate to rise to 200 ° C., thereby impairing the properties of the organic thin film. In particular, when the particles having high energy of 100 eV or more collide with the organic thin film, the structural, optical and electrical properties of the organic thin film are adversely affected. In addition, increasing the DC power for high speed film formation increases the plasma exposure effect, which accelerates the deterioration of organic thin films, making it difficult to realize high speed film formation of general DC / RF sputters.

To solve this problem, as illustrated in FIG. 6, Phillips presented a NONON (SiN / SiOx / SiN / SiOx / SiN) structure using PECVD as a multilayer thin film encapsulation structure, in which a nitride thin film and an oxide thin film were alternately formed. It is a process to make a thick thin film by deposition, but since the thin film is deposited at low RF power, the density of the thin film is reduced and the process itself is complicated, making it difficult to mass-produce.

In addition, the Electronics and Telecommunications Research Institute (ETRI) also presented Al ₂ O ₃ thin films by thin film encapsulation method using plasma enhanced atomic layer deposition (PEALD), but the Al precursor (precursor) and O precursor were atomic layers. Since the thin film is formed by alternately spraying in units, there is a disadvantage that the film forming speed is very slow, which is also difficult to apply to mass production.

In general, in order to implement a high-density thin film encapsulation method, the film formation process must be performed using a physical vapor deposition method such as sputtering, but since the organic thin film is vulnerable to plasma exposure, a new concept for thin film encapsulation that can perform the sputter method without plasma exposure The sputter method has not been proposed yet, and the development of this is needed.

The object of the present invention is to solve the problems as described above, unlike the general counter target sputter gun by arranging a ladder-shaped magnet in the center to increase the plasma density of the plasma damage pre-sputter process at the same time The present invention provides a twin target sputter system for thin film encapsulation and a film formation method using the same.

Another object of the present invention is to provide a thin film encapsulation twin target sputter system capable of sputtering without plasma exposure, and a film forming method using the same.

In order to achieve the above object, a thin target encapsulation twin target sputter system according to the present invention includes a vacuum chamber, a substrate support for supporting a substrate in the vacuum chamber, and a yoke plate provided opposite to the substrate and having one or both sides opened. A pair of sputter guns having a plurality of magnets arranged at equal intervals on the yoke plate, a target mounted on each of the pair of yoke plates, a gun support for supporting the pair of sputter guns, and a current to the target And a power supply unit for supplying, each of the plurality of magnets having an upper portion and a lower portion, wherein the upper portion and the lower portion are integrally formed, have different magnetic poles, and the plurality of magnets are arranged in a line. The support or the substrate support is movable in the chamber.

In addition, in the twin target sputter system for thin film encapsulation according to the present invention, the pair of sputter guns is disposed in a form facing each other.

In the twin target sputter system for thin film encapsulation according to the present invention, the targets are mounted on opposite surfaces of the pair of sputter guns, respectively.

In the thin target encapsulation twin target sputter system according to the present invention, the substrate is a large area organic light emitting device substrate.

In the twin target sputtering system for thin film encapsulation according to the present invention, the moving speed of the gun support or the substrate support is the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber, or the power supply unit. It is characterized by being controlled by the power supplied.

In the twin target sputtering system for thin film encapsulation according to the present invention, the deposition rate of the thin film on the substrate is a distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber, or the power supplied from the power supply. It is characterized by being controlled by.

In order to achieve the above object, a thin target encapsulation twin target sputter system according to the present invention is provided in a vacuum chamber, a plurality of substrate supports each supporting a plurality of substrates in the vacuum chamber, facing each substrate, one side or A pair of sputter guns having a yoke plate having both sides opened and a plurality of magnets arranged at equal intervals on the yoke plate, a target mounted on each of the pair of yoke plates, and supporting the pair of sputter guns A power support for supplying current to the gun support and the target, wherein each of the plurality of magnets comprises an upper portion and a lower portion, the upper and lower portions are integrally formed, and have different magnetic poles; Are arranged in line and the sputter gun is moved within the chamber to perform a thin film encapsulation for each of the plurality of substrates The.

In the twin target sputtering system for sealing a thin film according to the present invention, the moving speed of the sputter gun is defined by the deposition rate and uniformity of the thin film on the substrate, the distance between the target and the target, the distance between the target and the substrate, and the ratio of the reaction gas injected into the chamber. Or it is characterized by being controlled by the power supplied from the power supply.

In order to achieve the above object, a thin target encapsulation twin target sputter system according to the present invention includes a vacuum chamber, a substrate support for supporting a substrate in the vacuum chamber, and a yoke plate provided opposite to the substrate and having one or both sides opened. A plurality of sputter guns comprising a plurality of magnets arranged at equal intervals on the yoke plate, a target mounted on each of the pair of yoke plates, a plurality of gun supports each supporting the plurality of sputter guns, and a current to the target It includes a power supply for supplying, each of the plurality of magnets is made up of the top and bottom, the top and bottom are integrally, have different magnetic poles, the plurality of magnets are arranged in a line, The substrate is moved in the chamber such that the thin film is encapsulated by each of the plurality of sputter guns.

In addition, the twin target sputtering system for thin film encapsulation according to the present invention is a moving speed of the substrate is the number of sputter guns, the film formation rate and uniformity of the thin film on the substrate, the distance between the target and the target, the distance between the target and the substrate, injected into the chamber It is characterized by the ratio of the reaction gas or the power supplied from the power supply.

In addition, the twin target sputter system for thin film encapsulation according to the present invention is characterized in that the same material is mounted on the plurality of sputters, respectively.

In addition, the twin target sputter system for thin film encapsulation according to the present invention is characterized in that different materials are mounted on the plurality of sputters, respectively.

In addition, the twin target sputter system for thin film encapsulation according to the present invention is characterized in that the thin film encapsulation of the substrate is made of a multi-layer.

In addition, the twin target sputter system for thin film encapsulation according to the present invention is characterized in that the multi-layer is made of a SiN / SiO / SiN / SiO thin film.

In the twin target sputtering system for thin film encapsulation according to the present invention, the multi-layer is a multi-layer of Al ₂ O ₃ , SiN _x , SiON, SiO ₂ , MgO, TaO, Al ₂ O ₃ : N thin film, each having a thickness of 10 nm or more. It is characterized by that.

In addition, the twin target sputter system for thin film encapsulation according to the present invention is characterized in that the multi-layer is a layer made of a repetition of a transparent inorganic thin film and a monomer coating layer.

In the twin target sputtering system for thin film encapsulation according to the present invention, the multi-layer is one of Al ₂ O ₃ , SiN _x , SiON, SiO ₂ , MgO, TaO, Al ₂ O ₃ : N each having a thickness of 10 nm or more. Or a hybrid thin film which forms an organic thin film and a multi-layer by selecting the above inorganic thin film.

In addition, the film forming method according to the present invention for achieving the above object is provided in the vacuum chamber, the substrate support for supporting the substrate in the vacuum chamber, the substrate is provided opposite to the substrate, one or both sides of the yoke plate is the same as the yoke plate Twin target sputters for thin film encapsulation comprising a sputter gun having a plurality of magnets arranged at intervals, a target mounted on each of the yoke plates, a gun support supporting the sputter gun, and a power supply for supplying current to the target. A deposition method using a system, comprising: mounting a substrate on the substrate support object, adjusting the number and spacing of the sputter guns and the number and spacing of magnets according to the size and the number of the substrates, applying a current to the target; Forming a plasma at a central portion of the target by the target and the sputter gun, the substrate Depending on the conditions and the sputter gun condition characterized by transferring the substrate or the sputter gun.

First, the concept of the present invention will be described.

Twin target sputter system for thin film encapsulation according to the present invention and a film formation method using the same are arranged in the form of a ladder (Ladder type), the yoke plate (up and down) to form a yoke plate in one direction between the target and the target By forming the magnetic flux and maximizing the magnetic flux density at the center, high-speed film formation that is difficult to realize in general opposing target sputter is realized and thin film encapsulation process is performed. When the magnets are arranged in a ladder form as shown in FIG. 7, in the general counter target sputter, the empty center portion is filled with the magnet, thereby increasing the magnetic flux density in the center portion.

That is, according to the present invention, the plasma damage free sputter process can be executed by confining high energy particles generated during the thin film encapsulation process using the sputter between the target and the target, and unlike the general counter target sputter gun, a ladder shape The magnet-arranged array of magnets maximizes the magnetic flux density to provide a new concept sputtering device that enables a high speed thin film encapsulation process.

Twin target sputter (TTS) according to the present invention, unlike the commonly known facing target sputter (FTS) by arranging a ladder-shaped magnets to increase the magnetic flux density at the center of the target plasma density and thin film Sputter for thin film encapsulation with increased film formation speed. In addition, the high-density magnetic field formed between the target and the target is a new concept system that can perform the thin film encapsulation process without affecting the organic thin film by confining high energy charged particles generated during the sputtering process. In addition, the twin target gun is modularized so that a large area thin film encapsulation process is possible by moving the substrate or moving the modular twin target gun.

In the present invention, when a thin film of Al ₂ O ₃ , SiNx, SiON _x , MgO, SiOx or more is formed on an organic light emitting device or an organic transistor by using a twin target sputter, a high quality thin film encapsulation process without damage due to plasma exposure Can be performed. Through this process, the organic light emitting device or organic transistor encapsulated with a thin film can prevent the penetration of moisture or air from the outside, thereby improving the life of the device, and eliminating the conventional encapsulation glass substrate or metal can. It can realize a very thin organic light emitting device or an organic transistor. In addition, since high-speed film formation is possible, the thin film encapsulation process can be implemented faster than the conventional thin film encapsulation process, thereby reducing the unit cost and processing time of device fabrication.

When the twin target sputter having such a structure is used, the thin film encapsulation process of the organic light emitting device and the organic transistor can be performed at high speed without damage caused by plasma exposure, thereby reducing the manufacturing time of the high quality organic light emitting device and the organic transistor and reducing the organic light emission. The size of the device can be accelerated.

The above and other objects and novel features of the present invention will become more apparent from the description of the specification and the accompanying drawings.

EMBODIMENT OF THE INVENTION Hereinafter, the structure of this invention is demonstrated according to drawing.

In addition, in description of this invention, the same code | symbol is attached | subjected to the same part and the repeated description is abbreviate | omitted.

7 is a view showing an example of a plasma damage-free sputter gun having a ladder-shaped magnet array according to the present invention, Figure 8 is a view showing the magnetic flux density distribution in the target center portion.

At this time, when a thin yoke plate of cast iron is attached to upper and lower magnets arranged for uniform distribution of magnetic flux, a high density and uniform magnetic flux is formed between the target and the target. That is, the sputter gun according to the present invention consists of a yoke plate having one side or both sides opened and a plurality of magnets arranged at equal intervals on the yoke plate, and each of the plurality of magnets consists of an upper part and a lower part, and an upper part and a lower part. Is a unitary structure having different magnetic poles.

The plurality of magnets are arranged in a line.

At this time, when DC or RF power is simultaneously applied to the twin target, high density plasma is formed in the center of the target, and high speed plasma causes high-speed sputtering. In particular, since the target is sputtered by the high-density plasma formed at the center, the use efficiency of the target is increased, and the condensation of charged particles due to the central concentration of the magnetic flux occurs more efficiently than the general counter target sputter, but at the present time, The problem of the low speed film formation process known as the problem of the opposite target sputter can be solved.

9 is a configuration diagram of a twin target sputter system for thin film encapsulation according to the present invention, which shows a sputter system incorporating a sputter gun 300 of a twin target capable of high speed film formation, and FIG. 10 is a twin scan of the gun module. It is a block diagram of a target sputter system.

In the structure shown in FIGS. 9 and 10, the gun module is a structure in which the target 310 is mounted on the sputter gun 300 of the twin target shown in FIG. 7.

9 and 10, the thin target encapsulation twin target sputter system is provided with a vacuum chamber 400 filled with a reaction gas, a substrate support 402 for supporting the substrate 401 in the vacuum chamber 400, and facing the substrate. A sputter gun 300 having one or both sides opened, a target 310 mounted on each of the pair of yoke plates, a gun support (not shown) and a target 310 for supporting the sputter gun 300. It is provided with a power supply unit 500 for supplying a current.

9 and 10, the target 310 is mounted on the surfaces of the pair of sputter guns 104 facing each other, respectively.

Inside the gun module, the target 310 material (Si, Al, Ta, SiO2, Al2O3, MgO, TaO) required for thin film encapsulation is mounted, and the process gas (Ar, O2, N2, When N2O, He, H2) is injected and RF or DC power is applied to the twin target 310 at the same time, a high density plasma is formed between the target and the target. The target plasma is sputtered by the plasma thus formed, and the sputtered particles react with the process gas on the substrate to form a transparent thin film encapsulation film on the organic light emitting device that is the substrate 401.

At this time, the thin film deposition rate is controlled by the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber 400 or the power supplied from the power supply. Inert gas (Ar, Ne, Xe, Kr, He) injected into the gas nozzle mounted between the target and the sputtered particles are sent to the substrate 401 to form a high speed film formation, the substrate 401 or gun The module can be linearly moved by a conveying means (not shown) to ensure a uniform thin film of a large area.

In addition, as illustrated in FIG. 10, when the modular twin target gun is scanned, a thin film encapsulation process of a large area organic light emitting device or a plurality of organic light emitting devices may be performed at a time. In this case, the scan speed is a factor that determines the film formation speed and the uniformity of the thin film.

When the ultra-fast thin film process is required, a plurality of modular twin target guns may be mounted inside the system as shown in FIG. 11. It is a figure which shows the twin target sputter system for ultrafast thin film sealing.

In consideration of the film formation speed that requires the number of twin target guns equipped with the same material, and the organic light emitting device mounted on the substrate support 402 passes through a linear motion, a high-speed sputtering process is performed on each gun. As a result, a thick thin film can be formed in a short time. At this time, since the twin target sputter gun constrains the plasma, the organic light emitting device does not deteriorate due to the increase of the temperature of the substrate or the plasma exposure.

In addition, even when multi-coating using various materials, it is possible to apply the twin target sputter according to the present invention.

That is, as shown in FIG. 12 showing a twin target sputter system capable of thin film encapsulation using multiple layers, for example, SiO and SiN (SiN / SiO / SiN / SiO) thin films are modularized for use in thin film encapsulation. If different materials are attached to each gun and the organic light emitting device is scanned, a thin film encapsulation using multiple layers can be implemented without using a plurality of chambers.

It is a figure which shows the example using the twin target sputter which concerns on this invention for hybrid thin film bags.

First, a transparent inorganic thin film is formed by using a twin target sputter according to the present invention, and then the device is moved to a monomer chamber to coat the monomer. The coated monomer is cured in a curing chamber and then moved back to the twin target sputter chamber for transparent inorganic coating. By repeating such a process, a hybrid thin film encapsulation process is performed. In this case, the twin target sputter enables the high speed hybrid thin film encapsulation process to be realized by performing the transparent inorganic thin film coating process at high speed.

A life comparison of the organic light emitting device in which the thin film is encapsulated and the organic light emitting device in which the thin film is not encapsulated using the twin target sputter of the present invention having the above characteristics will be described with reference to FIG. 14.

FIG. 14 is a graph illustrating a life comparison between a thin film encapsulated OLED and a reference sample OLED using a twin target sputter according to the present invention.

As can be seen in Figure 14, when the high-definition transparent inorganic thin film is deposited on the organic light emitting device and the organic transistor using the twin target sputter according to the present invention, it is possible to manufacture a longer life organic light emitting device and organic transistor than the reference sample It can be seen that there is.

As mentioned above, although the invention made by this inventor was demonstrated concretely according to the said Example, this invention is not limited to the said Example and can be variously changed in the range which does not deviate from the summary.

As described above, according to the twin target sputter system for thin film encapsulation and the film formation method using the same, an organic light emitting device and an organic transistor can be manufactured by a simple thin film process without an encapsulation process using a conventional metal can and a glass substrate. In addition, the effect of simplifying the process and lowering the initial investment for manufacturing the organic light emitting device can be obtained.

In addition, when introducing into the thin film encapsulation process of the organic light emitting device and the organic transistor using the sputtering apparatus according to the present invention, the film formation process time can be shortened through high speed film formation, and the twin target sputter has a higher plasma density than the general counter target sputter. Because of the high film formation by the gas nozzle injection, the high-speed thin film encapsulation process is possible, and the film forming process time can be shortened, and a high density transparent inorganic encapsulation thin film can be formed.

In addition, by using the sputtering apparatus according to the present invention, it is possible to more effectively restrain the charged particles of high energy, thereby eliminating the plasma damage effect occurring in the thin film encapsulation process through a general DC / RF sputter. That is, the ladder-shaped magnet array increases the magnetic flux density in the center and induces the magnetic flux density distribution concentrated in the center, thereby effectively confining charged particles with high energy between the target and the target. This results in the plasma damage pre-sputter process being able to be implemented at high DC / RF power.

In addition, when the high-definition transparent inorganic thin film is deposited on the organic light emitting device and the organic transistor using the twin target sputter according to the present invention, the organic light emitting device and the organic transistor can be manufactured with a long life, and the inorganic thin film deposited by the high density plasma. Since the density is high, the invasion of moisture and oxygen from the outside can be prevented and the life of the device can be increased.

In addition, the thin film encapsulation process using the twin target sputter according to the present invention can be applied to a large-scale organic light emitting display device manufacturing process. Currently, the encapsulation process using metal cans or glass substrates is difficult to apply to the fourth generation or more substrates due to the absence of the device and the difficulty of the process, but the twin target sputter device of the present invention can freely change the size of the gun module according to the arrangement of the magnets. It can be applied as a thin film encapsulation process apparatus for manufacturing a large organic light emitting device can be obtained.

In addition, an effect of manufacturing a large area organic light emitting display device can be obtained by moving the sputter gun according to the present invention from side to side or from side to side.

In addition, when a large number of sputter gun modules according to the present invention are mounted inside a twin target sputter system, a large area of high speed film formation is possible, and an effect of a high speed thin film encapsulation process is obtained.

In addition, a plurality of sputter gun modules according to the present invention can be mounted in a twin target sputter system, but a multi-layer thin film deposition process using various materials can be performed in one chamber by using various materials and corresponding process gases on the target. There is an effect

Claims (29)

Twin target sputter system for thin film encapsulation, Vacuum chamber, A substrate support for supporting a substrate in the vacuum chamber, A pair of sputter guns provided opposite the substrate and having a yoke plate having one or both sides opened and a plurality of magnets arranged at equal intervals on the yoke plate, A target mounted on each of the pair of yoke plates, A gun support for supporting the pair of sputter guns It includes a power supply for supplying a current to the target, Each of the plurality of magnets is made up of a top and a bottom, the top and bottom are integrally formed, have different magnetic poles, the plurality of magnets are arranged in a line, And the gun support or the substrate support is movable within the chamber. The method of claim 1, The pair of sputter guns are thin target encapsulation twin target sputter system, characterized in that arranged in a form facing each other. The method of claim 2, And wherein the target is mounted on opposite surfaces of the pair of sputter guns, respectively. The method of claim 3, The substrate is a thin target encapsulation twin target sputter system, characterized in that the substrate for a large area organic light emitting device. The method of claim 4, wherein The moving speed of the gun support or the substrate support is controlled by the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber or the power supplied from the power supply unit twin Targeted Sputter System. The method of claim 4, wherein The thin film encapsulation twin target sputter system is controlled by the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber or the power supplied from the power supply. . Twin target sputter system for thin film encapsulation, Vacuum chamber, A plurality of substrate supports each supporting a plurality of substrates in the vacuum chamber, A pair of sputter guns provided opposite the respective substrates and having a yoke plate having one or both sides opened and a plurality of magnets arranged at equal intervals on the yoke plate, A target mounted on each of the pair of yoke plates, A gun support for supporting the pair of sputter guns It includes a power supply for supplying a current to the target, Each of the plurality of magnets is made up of a top and a bottom, the top and bottom are integrally formed, have different magnetic poles, the plurality of magnets are arranged in a line, And the sputter gun moves within the chamber to perform thin film encapsulation for each of the plurality of substrates. The method of claim 7, wherein The pair of sputter guns are thin target encapsulation twin target sputter system, characterized in that arranged in a form facing each other. The method of claim 8, And wherein the target is mounted on opposite surfaces of the pair of sputter guns, respectively. The method of claim 9, The substrate is a thin target encapsulation twin target sputter system, characterized in that the substrate for an organic light emitting device. The method of claim 10, The movement speed of the sputter gun is controlled by the deposition rate and uniformity of the thin film on the substrate, the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber or the power supplied from the power supply. Twin target sputter system for thin film encapsulation. Twin target sputter system for ultra-fast thin film encapsulation, Vacuum chamber, A substrate support for supporting a substrate in the vacuum chamber, A plurality of sputter guns provided opposite the substrate and comprising a yoke plate having one or both sides opened and a plurality of magnets disposed at equal intervals on the yoke plate, A target mounted on each of the pair of yoke plates, A plurality of gun supports each supporting the plurality of sputter guns; It includes a power supply for supplying a current to the target, Each of the plurality of magnets is made up of a top and a bottom, the top and bottom are integrally formed, have different magnetic poles, the plurality of magnets are arranged in a line, And the substrate moves in the chamber to be thin film encapsulated by each of the plurality of sputter guns. The method of claim 12, Each of the sputter guns are made in pairs and arranged in a form facing each other twin target sputter system for thin film encapsulation. The method of claim 13, And wherein the target is mounted on opposite surfaces of the pair of sputter guns, respectively. The method of claim 14, The substrate is a thin target encapsulation twin target sputter system, characterized in that the substrate for a large area organic light emitting device. The method of claim 15, The movement speed of the substrate is determined by the number of sputter guns, the film formation speed and uniformity of the thin film on the substrate, the distance between the target and the target, the distance between the target and the substrate, the ratio of the reaction gas injected into the chamber, or the power supplied from the power supply unit. Twin target sputter system for thin film encapsulation, characterized in that the adjustment. The method of claim 16, Twin target sputter system for thin film encapsulation, characterized in that the same material is mounted on the plurality of sputters, respectively. The method of claim 17, Twin target sputter system for thin film encapsulation, characterized in that different materials are mounted on the plurality of sputters, respectively. The method of claim 18, Twin target sputter system for thin film encapsulation, characterized in that the thin film encapsulation of the substrate consists of a multi-layer. The method of claim 19, The multi-layer thin target encapsulation twin target sputter system, characterized in that consisting of a thin film of SiN / SiO / SiN / SiO. The method of claim 19, The multi-layer is a twin target sputter system for thin film encapsulation, characterized in that each of the multi-layer of Al ₂ O ₃ , SiN _x , SiON, SiO ₂ , MgO, TaO, Al ₂ O ₃ : N thin film having a thickness of 10nm or more. The method of claim 19, The multi-layer is a thin target encapsulation twin target sputter system, characterized in that the layer consisting of a repetition of the transparent inorganic thin film and the monomer coating layer. The method of claim 19, The multi-layer may be formed of an organic thin film and a multi-layer by selecting one or more inorganic thin films of Al ₂ O ₃ , SiN _x , SiON, SiO ₂ , MgO, TaO, and Al ₂ O ₃ : N, each having a thickness of 10 nm or more. Twin target sputter system for thin film sealing characterized by the above-mentioned hybrid thin film to form. A sputter gun having a vacuum chamber, a substrate support for supporting a substrate in the vacuum chamber, a yoke plate provided to face the substrate, and having a plurality of magnets arranged at equal intervals on the yoke plate and having one or both sides opened; A film formation method using a thin target encapsulation twin target sputter system including a target mounted on each yoke plate, a gun support for supporting the sputter gun, and a power supply unit for supplying current to the target. Mounting a substrate on the substrate support object; Adjusting the number and spacing of the sputter guns and the number and spacing of the magnets according to the size and number of the substrates; Applying a current to the target; and Forming a plasma at a central portion of the target by the target and the sputter gun, And the substrate or the sputter gun is transported according to the conditions of the substrate and the conditions of the sputter gun. The method of claim 24, And the substrate is a substrate for a large area organic light emitting display device. The method of claim 24, And the substrate or the sputter gun is movable. The method of claim 26, And the number of sputter guns is increased or decreased according to the deposition rate or uniformity of the substrate. The method of claim 27, A plurality of sputters are provided, and the plurality of sputters are formed with the same material, respectively. The method of claim 27, A plurality of sputters are provided, and a plurality of different materials are mounted on the plurality of sputters, respectively.

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