KR20080087247A - Radioisotope battery - Google Patents

Radioisotope battery Download PDF

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Publication number
KR20080087247A
KR20080087247A KR1020070029193A KR20070029193A KR20080087247A KR 20080087247 A KR20080087247 A KR 20080087247A KR 1020070029193 A KR1020070029193 A KR 1020070029193A KR 20070029193 A KR20070029193 A KR 20070029193A KR 20080087247 A KR20080087247 A KR 20080087247A
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radioisotope
thin film
layer
semiconductor
schottky
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KR1020070029193A
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Korean (ko)
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KR100934937B1 (en
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이진민
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이진민
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The present invention relates to a radioisotope cell, and more particularly, to a radioisotope cell that can be used semi-permanently in a microwatt circuit.

In addition, the radioisotope battery of the present invention comprises a Schottky junction formed by joining an impurity semiconductor thin film and a metal thin film; And a radioisotope layer bonded to any one of the impurity semiconductor thin film and the metal thin film in the Schottky junction to provide an energy source so that electromotive force is generated in the impurity semiconductor thin film.

Description

Radioisotope battery

1 is a cross-sectional view showing the structure of a conventional radioisotope cell,

2 is a cross-sectional view taken in the AA direction in FIG.

3 is a cross-sectional view showing the structure of a radioisotope battery according to an embodiment of the present invention;

4 is a cross-sectional view showing the structure of a radioisotope cell according to another embodiment of the present invention;

5 is a cross-sectional view showing a multilayer structure of a radioisotope cell according to an embodiment of the present invention;

6 is a cross-sectional view showing a multilayer structure of a radioisotope cell according to another embodiment of the present invention.

*** Explanation of symbols for the main parts of the drawing ***

100: radioisotope cell 110: base plate

120: Schottky Semiconductor 130: Schottky Metal Thin Film

140: radioisotope layer 150: radiation leakage prevention layer

160: positive electrode 170: negative electrode

The present invention relates to a radioisotope cell, and more particularly, to a radioisotope cell that can be used semi-permanently in a microwatt circuit.

In general, radioisotopes are elements that emit radiation with specific energy and decay into stable isotopes. Here, in addition to the α, β-, and β + decay, there is also a so-called EC decay in which the nucleus captures the K orbital electrons. Most of these again release extra energy as alpha rays, beta rays, or gamma rays and become stable isotopes. The amount of radioisotope is expressed in terms of radioactive intensity, ie the number of breakdowns that occur in unit time. The time it takes for a radioactive element to collapse and decrease to half its initial amount is called a half-life period, which is constant for radioisotopes. It emits radiation for hundreds of years.

On the other hand, in the field of ultra-compact battery manufacturing, a microwatt-class circuit device such as an unmanned electronic device or the like is produced using an electron / hole pair generated in a semiconductor as an energy source by radiation emitted from such radioisotopes. The development of so-called radioisotope cells, which can be used semi-permanently in unmanned micromachines (MEMS), has been attempted. As one method of this, Korean Patent No. 592478 proposes a 'miniature isotope cell using a pin diode' (hereinafter, referred to as an invention). Here, the pin diode generally refers to an intrinsic semiconductor, that is, a semiconductor in which P-type and N-type are formed by implanting impurities such as trivalent element and pentavalent element into a silicon wave.

1 is a cross-sectional view showing the structure of a conventional radioisotope battery according to the above-described invention, Figure 2 is a cross-sectional view taken in the AA direction in FIG.

As shown in FIG. 1 and FIG. 2, according to the description in the preceding invention, "First, the N-semiconductor region 20 is doped on the silicon substrate 10, and the P-semiconductor region 30 is doped to be formed. An I-semiconductor region, that is, an intrinsic semiconductor 40, is formed between the N-semiconductor region 20 and the P-semiconductor region 30. Here, the thicknesses of the PIN element layers 20, 30, and 40 are radioisotope. It should be designed to be shallower than the static stop to less material damage and hardening by alpha or beta rays emitted from the element, and leave the non-conductor between the PIN element and the device. ) And a negative electrode 70 and a radioisotope layer 50 is formed between the positive electrode 60 and the negative electrode 70. The radioisotope layer 50 emits low energy beta rays and gamma rays. With materials containing Sr-90 or gaseous H-3, etc. The thickness of the electrodes (60, 70) and the radioisotope layer (50) is formed to a predetermined value by experiment so that most alpha or beta rays are sufficiently escaped. An upper portion of the radioisotope layer 50 is coated with an electrical insulator 80 to prevent leakage of the radiation, and the electrical insulator 80 allows the heat generated from the radioisotope layer 50 to sufficiently escape. It uses a material having good thermal conductivity. It is also formed to a predetermined thickness so that radiation generated from the radioisotope layer 50 does not escape to the outside.

However, according to the conventional radioisotope cell described above, forming a radioisotope layer between the positive electrode and the negative electrode means that the radioisotope is deposited on the surface of the intrinsic semiconductor formed between the N- and P-semiconductor regions. In this deposition process, when the radioisotope layer is formed on the surface of the N-semiconductor region and the P-semiconductor region beyond the intrinsic semiconductor region, the radioisotope layer on which the N-semiconductor region and the P-semiconductor region are deposited is deposited. There is a structural problem that the short (short) through. That is, as shown in FIG. 2, it means that the radioisotope is to be precisely deposited only in the region indicated by the reference numeral 50, which is very difficult to partially deposit on the silicon wafer. Even if deposition is possible, this proves to be inefficient for producing batteries in large quantities.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. Instead of using a fin semiconductor as a current generating source, a Schottky junction is used, but the radioisotope layer is deposited on only one of a metal and a semiconductor. An object of the present invention is to provide a radioisotope cell for preventing a short circuit through the radioisotope layer.

Radioisotope battery according to an embodiment of the present invention to achieve the above object is a Schottky junction formed by bonding an impurity semiconductor thin film and a metal thin film; And a radioisotope layer including a radioisotope layer bonded to any one of an impurity semiconductor thin film and a metal thin film in the Schottky junction and providing an energy source so that electromotive force is generated in the impurity semiconductor thin film.

In the above-described configuration, the radioisotope battery is preferably a multi-layer structure consisting of at least two radioisotope layers and the impurity semiconductor thin film.

In the battery of the multilayer structure, the impurity semiconductor thin film in which the radioisotope layer is laminated on both surfaces is thicker than the impurity semiconductor thin film in which the radioisotope layer is stacked on one surface.

In addition, at least two or more surfaces of the radioisotope layer are preferably covered with the impurity semiconductor thin film.

In addition, it is preferable that any one or more of the impurity semiconductor thin film, the metal thin film, and the radioisotope layer covers a layer formed thereunder.

In addition, the radioisotope layer is preferably made of Ni-63, it may be used as an electrode itself.

Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the radioisotope battery according to a preferred embodiment of the present invention.

Figure 3 is a stage showing the structure of a radioisotope cell according to an embodiment of the present invention.

As shown in Figure 3, the radioisotope cell according to the present invention (hereinafter referred to as 'battery') (100) is a base plate 110 that is the basis for the battery generation; A schottky semiconductor 120 stacked on the bottom plate 110; A schottky metal thin film 130 stacked thereon; Similarly, a radioisotope layer 140 laminated on the Schottky metal thin film 130 to emit radiation to provide an energy source to the Schottky semiconductor 120; A positive electrode 160 formed on the Schottky metal thin film 130; A negative electrode 170 formed on the Schottky semiconductor 120; And a radiation leakage prevention layer 150 which is stacked on the radioisotope layer 140 and insulates the positive electrode 160 and the negative electrode 170 while blocking radiation from leaking to the outside. Here, the battery 100 may also be manufactured as a structure in which the semiconductor layer, the metal thin film, the radioisotope layer, and the like are stacked on each of both surfaces of the bottom plate 110.

In the above-described configuration, the schottky semiconductor 120 is implanted with impurities, that is, either an acceptor or a donor, into a silicon thin film or a gallium-nitrogen (GaN) thin film. Accordingly, in the Schottky semiconductor 120, particularly in the depletion layer, electron / hole pairs are generated by radiation generated from the radioisotope layer 140, and the electron / hole pairs are formed in the Schottky metal thin film 130. And Schottky semiconductor 120 to act as an electromotive force (W / mm 3 ) to flow a current. In this case, it is preferable to manufacture the Schottky metal thin film 130 on the surface where the impurities of the Schottky semiconductor 120 are implanted, that is, on the side where the impurity concentration is higher, from the viewpoint of generating electromotive force.

In addition, although the Sr-90 or Co-60 may be used as the radioisotope layer 130, Ni-63, which has less risk of radiation leakage or the like, may be applied by emitting relatively lower energy. Here, since radiation emitted from Ni-63 is ineffective as an energy source from 400 nm, it is preferable to manufacture the sum of the thicknesses of the Schottky metal thin film 130 and the Schottky semiconductor 120 to 400 nm or less. .

Meanwhile, in the above description, the side formed on the metal is described as the positive electrode and the side formed on the semiconductor as the negative electrode. However, this will be changed depending on the concentration of the impurities doped in the semiconductor, the material of the metal, or whether the impurities are donors or accelerators. In addition, since the radioisotope is a metal, it can be used as an electrode itself. In addition, the Schottky metal thin film 130 may be formed of titanium, gold, or platinum. In addition, the silicon thin film is preferably formed of amorphous silicon (polymorph) or polysilicon (amorphous-silicon) that can be deposited at a low temperature and high doping.

Figure 4 is a cross-sectional view showing the structure of a radioisotope cell according to another embodiment of the present invention.

As shown in FIG. 4, the battery 200 according to the present invention includes a bottom plate 210; A schottky metal thin film 220 stacked on the base plate 210; A schottky semiconductor 230 stacked thereon; And a radioisotope layer 240; Negative electrode 260; Positive electrode 270; And a radiation leakage prevention layer 140, in which the stacking order of the metal and the semiconductor is changed in preparation for the battery 100, that is, the radioisotope layer 240 and a Schottky semiconductor supplied with an energy source therefrom. Since 230 is a close structure, the functional aspects are the same. However, the difference between them will be dealt with in more detail in the description of the radioisotope cell implemented in a multilayer structure to be described later.

5 is a cross-sectional view illustrating a multilayer structure of a radioisotope battery according to an embodiment of the present invention, which is based on the structure of the battery 100 described above with reference to FIG. 3.

That is, as shown in FIG. 5, the battery 300 according to the present invention is based on a structure in which a metal thin film which forms a Schottky junction in combination with a semiconductor is formed between a radioisotope layer and a semiconductor, and thus has a plurality of radioactive isotopes. A semiconductor that generates electron / hole pairs by an element layer and radiation by this is a multilayer structure in which layer layers are laminated.

To describe an example of this manufacturing method, first, a silicon thin film or a gallium nitrogen thin film is deposited on the base plate 310 on which the battery is generated, and an impurity is injected into the surface thereof to form the first Schottky semiconductor 315. A Schottky metal thin film 320 is deposited on the first Schottky semiconductor 315, and a first radioisotope layer 325 is deposited thereon.

Next, in the same manner as above, the second Schottky metal thin film 320 is deposited in a form covering the layer formed thereunder, and the second Schottky metal thin film 320 is covered thereon. The semiconductor 335 is deposited. In this way, the semiconductor is laminated on both sides of the radioisotope layer, so that the electromotive force is approximately twice that of the battery 100 of FIG. 3.

Next, a third Schottky metal thin film 340 on the second Schottky semiconductor 335, a second radioisotope layer 345 on it, and a fourth Schottky metal thin film 350 on it, The third Schottky semiconductor 355 is sequentially deposited thereon, and finally, the radiation leakage preventing body 360 is deposited to finish the manufacture of the multilayer structure battery according to the present invention.

 Here, since the second Schottky semiconductor 335 is supplied with an energy source from a radioisotope layer stacked above and below, unlike other Schottky semiconductors, the second Schottky semiconductor 335 is preferably manufactured thicker than other Schottky semiconductors.

6 is a cross-sectional view illustrating a multilayer structure of a radioisotope battery according to another embodiment of the present invention, which is based on the structure of the battery 200 described above with reference to FIG. 4.

That is, as shown in FIG. 6, the battery 400 according to the present invention is based on a structure in which a semiconductor forming a Schottky junction by combining with a metal is formed between a radioisotope layer and a metal, and thus, a plurality of radioisotopes. A semiconductor that generates electron / hole pairs with a layer and the radiation thereby is a multilayer structure in which layer layers are stacked.

To illustrate an example of this manufacturing method, first, a base plate 410 on which a battery is generated is prepared, and the first schottky metal thin film 415, the first schottky semiconductor 420, First radioisotope layer 425, second Schottky semiconductor 430, second Schottky metal thin film 435, third Schottky semiconductor 440, second radioisotope layer 445, fourth The Schottky semiconductor 450 and the third Schottky metal thin film 455 are sequentially deposited in such a manner as to cover a layer formed thereunder to manufacture a multilayer structure battery according to the present invention. Therefore, when the battery 400 is compared with the battery 300 shown in FIG. 5, the number of deposition of the Schottky thin metal film is reduced and the number of deposition of the Schottky semiconductor is more.

The radioisotope cell of the present invention and its manufacturing method are not limited to the above-described embodiments and can be modified in various ways within the scope of the technical idea of the present invention.

According to the radioisotope cell of the present invention as described above and a method of manufacturing the same, instead of using a fin semiconductor as a current generating source, a Schottky junction is used, but the radioisotope layer is laminated on only one of the metal and the semiconductor. In the current flow between semiconductors, short circuiting through the radioisotope layer is prevented, thereby facilitating the manufacturing process of the battery and further facilitating the fabrication of a double-sided structure or a multilayered structure.

Claims (7)

A Schottky junction formed by joining an impurity semiconductor thin film and a metal thin film; And A radioisotope cell comprising a radioisotope layer bonded to any one of an impurity semiconductor thin film and a metal thin film in the Schottky junction and providing an energy source to generate electromotive force in the impurity semiconductor thin film. The method of claim 1, The radioisotope cell is a radioisotope cell, characterized in that the radioisotope layer and the impurity semiconductor thin film is a multi-layer structure consisting of at least two each. The method of claim 2, Of the plurality of impurity semiconductor thin film, an impurity semiconductor thin film in which the radioisotope layer is laminated on both surfaces is a radioisotope cell, characterized in that thicker than the impurity semiconductor thin film in which the radioisotope layer is laminated on one surface. The method of claim 1, At least two surfaces of the radioisotope layer are covered with the impurity semiconductor thin film. The method of claim 1, At least one of the impurity semiconductor thin film, the metal thin film and the radioisotope layer is a radioisotope cell, characterized in that the form covering the layer formed below. The method according to any one of claims 1 to 5, The radioisotope layer is radioisotope cell, characterized in that consisting of Ni-63. The method according to any one of claims 1 to 5, Radioisotope cell, characterized in that the electrode is formed on the radioisotope layer.
KR1020070029193A 2007-03-26 2007-03-26 Radioisotope battery KR100934937B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024879A (en) * 2010-11-03 2011-04-20 北京理工大学 Method for reducing dark current of gallium arsenide isotope battery
KR20140129404A (en) * 2013-04-26 2014-11-07 한국전자통신연구원 Radioisotope battery and manufacturing method for thereof
US10699820B2 (en) 2013-03-15 2020-06-30 Lawrence Livermore National Security, Llc Three dimensional radioisotope battery and methods of making the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024879A (en) * 2010-11-03 2011-04-20 北京理工大学 Method for reducing dark current of gallium arsenide isotope battery
US10699820B2 (en) 2013-03-15 2020-06-30 Lawrence Livermore National Security, Llc Three dimensional radioisotope battery and methods of making the same
KR20140129404A (en) * 2013-04-26 2014-11-07 한국전자통신연구원 Radioisotope battery and manufacturing method for thereof

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