KR20080085798A - Laminating type thermovision sensor device - Google Patents

Abstract

A stacked type thermal image sensing apparatus is provided to improve noise features by separating and processing a signal according to pixels with a stacked structure of a thermal infrared photosensitive unit and a substrate having a signal processor. A stacked type thermal image sensing apparatus includes a plurality of pixel devices(1A,1B). Each of pixel devices has a pixel signal processor(3) and a thermal sensing pixel unit(4). The pixel signal processor has an MOSFET structure pattern formed on a wafer substrate, and processes a charge signal according to a thermoelectric potential. The thermal sensing pixel unit is stacked on the MOSFET structure pattern of the pixel signal processor, and generates thermal electromotive force proportional to the amount of infrared ray sensed from an exterior.

Description

Laminated type thermovision sensor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stacked thermal image sensor device, and more particularly, to a stacked thermal image sensor device having a structure in which a substrate having a thermal infrared photosensitive unit capable of detecting thermal infrared rays and a signal processing unit on which a circuit such as a MOS transistor is formed is laminated. will be.

In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal, in which charge carriers are stored and transferred to a capacitor while individual metal oxide-silicon (MOS) capacitors are located in close proximity to each other. By using CMOS technology that uses charge coupled device (CCD), control circuit, and signal processing circuit to peripheral circuits, MOS transistors are made as many as the number of pixels. There is a complementary MOS (CMOS) image sensor that employs a switching scheme that sequentially detects the output.

In addition, the conventional image sensor as described above also includes a thermal infrared image sensor, such a thermal infrared image sensor is a lens that focuses the thermal infrared radiation emitted from an object having a constant temperature and the arrangement of the elements that can detect the thermal infrared, heat It consists of a readout chip that extracts signals from infrared sensing elements. Here, the thermal infrared sensing element may be classified into a semiconductor type using a semiconductor and a thermal type using a thermal effect. At this time, the semiconductor type in the small intestine has a high sensitivity in the manner of generating electron-holes excited by thermal infrared rays when HIRCdTe or the like having a low bandgap is incident, but because the bandgap is low thermal noise It is vulnerable to low temperature and usually used at low temperature. As an alternative, a method for detecting infrared rays by an artificial semiconductor having a quantum structure that does not require cooling has been studied.

On the other hand, the thermal type of the sensing element as described above is a method of injecting the thermal infrared rays collected from the lens into the thermal infrared absorber to absorb the thermal infrared rays, the temperature of the thermal infrared absorber is raised to measure the thermal image, How to use bolometric material using sensitive phase transition material, how to use pyroelectric material using characteristics of ferroelectric temperature (PbTiO3, Ba _{1 - x} Sr _x TiO3), Thermoelectric material (BiTe, Bi _{1 - x} Sb _x etc.) and the method of using thermoelectric power when temperature rises. An example of thermal infrared sensing using thermoelectric power is shown in FIG. 2.

In addition, the readout chip for processing signals obtained from the conventional thermal infrared sensing elements as described above is generally manufactured using a CMOS process because it requires high amplification rate and complicated noise processing, and is connected in series with the thermal infrared sensing element array. do.

Then, referring to FIG. 1, an example of the conventional semiconductor type thermal infrared image sensor device as described above is installed at a front end of a housing (not shown) to collect an optical signal including an infrared ray incident from the outside. Wow; A plurality of photodiode (PD) 72 positioned on the rear surface of the optical lens 70 and arranged in a matrix on a semiconductor wafer substrate 71 to perform photoelectric conversion;

A plurality of vertical transmission channels (VC) 73 formed between the vertical columns of the photoelectric conversion region 72 to transmit signals;

A plurality of transfer gates disposed between the photoelectric conversion region 72 and the vertical transfer channel 72 to control an operation of transferring signal charges accumulated in the photoelectric conversion region 72 to the vertical transfer channel 72; TG: 74);

 A plurality of first electrodes (FL) 75 disposed between the horizontal columns of the photoelectric conversion region 72 and having an extension part covering a portion of the transfer gate 74 and the vertical transfer channel 73 between each vertical column; ;

A plurality of second electrodes SL formed on the first electrode 75 between the horizontal columns of the photoelectric conversion regions 72 and having an extension part covering the remaining portion of the vertical transfer channel 73 between each vertical column. 76).

On the other hand, referring to the operation of the conventional thermal infrared image sensor device as described above, the external visible light is incident on the photoelectric conversion region 72 located on the back through the optical lens 70 of the thermal infrared image sensor device 77. In this case, photon effect conversion is accumulated in this part of the PN junction photodiode or MOS capacitor.

At this time, the optical signal is converted and accumulated by the photoelectric conversion region 72 to the electrical signal phone through the above process, and then between the photoelectric conversion region 72 and the vertical transmission channel 73 during the field shift period. It passes through the channel region controlled by the transfer gate 74 formed in the vertical transmission channel (73).

Then, the plurality of signal charges are transferred to the horizontal transfer channel by clock pulses applied to the plurality of transfer electrodes formed on the vertical channel region 73, that is, the first electrode 75 and the second electrode 76. Collected by the sensor array 78 through the input to the lead-out circuit unit (79). Therefore, the readout circuit unit 79 sequentially processes signals input from the sensor array 78 to form a thermal image.

By the way, the conventional thermal infrared image sensor device as described above, for example, when using a pyroelectric material, since a single layer of pyroelectric layer is required for thermal infrared detection, it can be combined with a signal processing chip using a CMOS process in a relatively simple manner. In case of using thermoelectric effect, the arrangement of p-type semiconductor and n-type semiconductor is required, so the method of separating thermal infrared sensor array and readout chip should be used.

However, the conventional semiconductor type infrared infrared image sensor device as described above is a manufacturing cost when the thermal infrared image sensor using a thermoelectric effect is executed in a separate process such as a thermal infrared sensor array and a lead-out circuit part manufactured by a CMOS process. In addition to the significant increase in the noise, it was difficult to produce accurate sensing results due to the noise introduced.

Accordingly, the present invention has been invented to solve the above-mentioned problems of the prior art, and provides a stacked thermal image sensor device that can significantly improve noise characteristics because signal processing is performed separately for each thermal infrared pixel. Has its purpose.

Still another object of the present invention is to provide a stacked thermal image sensor device which can be manufactured in a small size because the sensor is configured by integrally stacking a thermal infrared sensor and a lead-out circuit chip.

The present invention for achieving the above object is a pixel signal processing unit for forming a pattern of the MOSFET structure on the wafer substrate to process the charge signal according to the thermal potential;

Provided is a stacked thermal image sensor device which is formed by stacking a plurality of pixel device units formed of a thermal sensing pixel unit that is stacked on the MOSFET structure of the pixel signal processing unit and generates heat power proportional to the amount of infrared rays sensed from the outside.

Another aspect of the present invention is a pixel signal processor for processing a charge signal according to the thermal potential by forming a pattern of the MOSFET structure on the wafer substrate;

Stacked on the MOSFET structure of the pixel signal processor, the absorber absorbing heat of infrared (IR), a metal member installed at a lower end of the absorber to transfer heat of the absorber, and between the metal member and the sensing terminal connection part. Provided is a stacked thermal image sensor device including a heat sensing pixel portion including a thermoelectric cell member for connecting a plurality of thermal conductors (TE +) and (TE−) in series.

The present invention as described above has a structure in which a substrate having a thermal infrared photosensitive unit capable of detecting thermal infrared rays and a signal processing unit on which a circuit such as a MOS transistor is formed is stacked on each other, so that the signal processing is separately performed for each thermal infrared pixel. Since it has the advantage that can significantly improve the noise characteristics.

In addition, according to the present invention, a high magnification circuit can be used in the lower portion of the thermal infrared sensor, and since the area occupied by the thermal infrared sensing unit in the pixel portion is large, the sensing sensitivity is also significantly improved.

 Furthermore, according to the present invention, since the infrared infrared sensor and the lead-out circuit chip are stacked integrally with each other, the sensor is constituted so that the sensor can be made compact and the manufacturing cost is also considerably reduced.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 and 4, the stacked thermal image sensor includes: a pixel signal processor (3) for forming a MOSFET structure pattern on a wafer substrate (2) to process charge signals according to thermal potential;

A plurality of pixel device sections 1A-N formed by stacking the MOSFET structure of the pixel signal processing section 3 and consisting of thermally sensitive pixel sections 4 generating thermal power proportional to the amount of infrared light sensed from the outside. Are arranged.

First Example

Here, the pixel signal processor 3 is arranged in a matrix form on the semiconductor wafer substrate 2 as shown in FIG. 5 and outputs a voltage in proportion to the amount of electrons applied. : 5);

Tx and Rx terminals 6 and 7 installed between the horizontal columns of the FD diffusion unit 5 and performing switching control of the pixel signal processing unit 3, and charges during the switching control operation of the pixel signal processing unit 3. Is formed between the CT terminal 8 which accumulates the charge, the Vdd terminal 9 which discharges the charge of the CT terminal 8, and the horizontal rows of the FD diffusion unit 5, and is output from the FD diffusion unit 5. A wiring electrode part including a Vout terminal 10 for outputting a voltage to the outside;

And sensing terminal connecting parts 11 and 12 connected to a plurality of terminals formed by thermoelectric junctions of the thermosensitive pixel parts 4.

On the other hand, the heat sensing pixel portion 4 is an absorber 13 for absorbing heat of infrared (IR) as shown in FIG. 3;

A metal member 14 installed at a lower end of the absorber 13 to transfer heat of the absorber 13;

Thermoelectric cell composed of a thermal conductor 16A (TE +), 16B (TE-) consisting of a plurality of thermoelectric elements to be a thermoelectric junction between the metal member 14 and the sensing terminal connecting portion (11, 12) The member 15 is comprised.

Here, the thermal conductor 16A (TE +) of the thermoelectric cell member 15 is connected to the sensing terminal connector 12, and the thermal conductor 16B (TE-) is connected to the sensing terminal connector 11, respectively.

The thermoelectric cell member 15 composed of the thermal conductors 16A (TE +) and 16B (TE−) may be formed of BiTe, [Bi (0.88), Sb (0.12))], and ZnO. Can be used.

That is, the pixel signal processing section 3 of the present invention is formed by patterning a MOS transister on a substrate fabricated by a CMOS process, and the thermal sensing pixel section 4 is formed above the MOSFET of the pixel signal processing section 3. The terminals of the plurality of thermal conductors 16A (TE +) and 16B (TE-) constituting a thermoelectric junction are connected to each other through a lamination process.

Accordingly, the terminals of the plurality of thermal conductors 16A (TE +) and 16B (TE-) are electrically connected together by the metal member 14 at the upper portion thereof, and are arranged on the upper side of the metal member 14. The infrared absorber 13 whose temperature rises as the thermal infrared rays are absorbed again is positioned. An equivalent circuit of one pixel having such a structure is shown in FIG.

2nd Example

As shown in FIG. 5, the pixel signal processor 3 according to the second embodiment of the present invention is arranged in a matrix shape on a wafer substrate 2 of a semiconductor to output a voltage in proportion to the amount of electrons applied. Floating diffusion (FD: 5);

Tx and Rx terminals 6 and 7 installed between the horizontal columns of the FD diffusion unit 5 and performing switching control of the pixel signal processing unit 3, and charges during the switching control operation of the pixel signal processing unit 3. Is formed between the CT terminal 8 which accumulates the charge, the Vdd terminal 9 which discharges the charge of the CT terminal 8, and the horizontal rows of the FD diffusion unit 5, and is output from the FD diffusion unit 5. A wiring electrode part including a Vout terminal 10 for outputting a voltage to the outside;

And sensing terminal connecting parts 11 and 12 connected to a plurality of terminals formed by pyroelectric junctions of the thermal sensing pixel part 4.

On the other hand, the heat sensing pixel portion 4 is an absorber 13 for absorbing heat of infrared (IR) as shown in FIG. 3;

A metal member 14 installed at a lower end of the absorber 13 to transfer heat of the absorber 13;

A thermoelectric cell composed of a plurality of pyroelectric elements 16A (TE +) and 16B (TE-), each of which is a pyroelectric junction between the metal member 14 and the sensing terminal connecting portions 11 and 12. The member 15 is comprised.

Here, the thermal conductor 16A (TE +) of the thermoelectric cell member 15 is connected to the sensing terminal connector 12, and the thermal conductor 16B (TE-) is connected to the sensing terminal connector 11, respectively.

As the material of the thermoelectric cell member 15 including the thermal conductors 16A (TE +) and 16B (TE-), superelements (PT) may be used.

That is, the pixel signal processing section 3 of the present invention is formed by patterning a MOS transister on a substrate fabricated by a CMOS process, and the thermal sensing pixel section 4 is formed above the MOSFET of the pixel signal processing section 3. Each terminal of the plurality of thermal conductors 16A (TE +) and 16B (TE-) constituting a pyroelectric junction is connected to each other through a lamination process.

Accordingly, the terminals of the plurality of thermal conductors 16A (TE +) and 16B (TE-) are electrically connected together by the metal member 14 at the upper side thereof, and are connected to the upper side of the metal member 14. The infrared absorber 13 whose temperature rises as the thermal infrared rays are absorbed again is positioned. An equivalent circuit of one pixel having such a structure is shown in FIG.

The third Example

The pixel signal processing unit 3 according to the third embodiment of the present invention is an FD diffusion unit arranged in a matrix shape on a wafer substrate 2 of a semiconductor and outputting a voltage in proportion to the amount of electrons applied. Floating diffusion (FD: 5);

Tx and Rx terminals 6 and 7 installed between the horizontal columns of the FD diffusion unit 5 and performing switching control of the pixel signal processing unit 3, and charges during the switching control operation of the pixel signal processing unit 3. Is formed between the CT terminal 8 which accumulates the charge, the Vdd terminal 9 which discharges the charge of the CT terminal 8, and the horizontal rows of the FD diffusion unit 5, and is output from the FD diffusion unit 5. A wiring electrode part including a Vout terminal 10 for outputting a voltage to the outside;

It includes a sensing terminal connecting portion (11, 12) connected to each of a plurality of terminals formed by the thermal ion element (Thermionic junction) of the thermal sensing pixel portion (4).

On the other hand, the heat sensing pixel portion 4 is an absorber 13 for absorbing heat of infrared (IR) as shown in FIG. 3;

A metal member 14 installed at a lower end of the absorber 13 to transfer heat of the absorber 13;

Consists of a thermal conductor [16A (TE +), 16B (TE-)] consisting of a plurality of thermal ion devices to form a thermal ion junction between the metal member 14 and the sensing terminal connectors 11 and 12. It is configured to include a thermoelectric cell member (15).

The thermal ion devices may be made of a metal material having a low work function.

Here, the thermal conductor 16A (TE +) of the thermoelectric cell member 15 is connected to the sensing terminal connector 12, and the thermal conductor 16B (TE-) is connected to the sensing terminal connector 11, respectively.

That is, the pixel signal processing section 3 of the present invention is formed by patterning a MOS transister on a substrate fabricated by a CMOS process, and the thermal sensing pixel section 4 is formed above the MOSFET of the pixel signal processing section 3. The terminals of the plurality of thermal conductors 16A (TE +) and 16B (TE-) constituting a thermal ion junction are connected to each other through a lamination process.

Accordingly, the terminals of the plurality of thermal conductors 16A (TE +) and 16B (TE-) are electrically connected together by the metal member 14 at the upper side thereof, and are connected to the upper side of the metal member 14. The infrared absorber 13 whose temperature rises as the thermal infrared rays are absorbed again is positioned. An equivalent circuit of one pixel having such a structure is shown in FIG.

4th Example

In the fourth embodiment of the present invention, as shown in FIG. 7, a plurality of thermal conductors 16A (TE +) and thermal conductors 16B (TE−) are connected in series.

That is, the heat conductor [16A (TE +)], the heat conductor [16B (TE-)], the heat conductor [16C (TE +)], the heat conductor [16D (TE-)], and the heat conductor [16E (TE +)] and Attaching an upper end of the thermal conductor 16F (TE-) to the metal member 14 attached to the absorber 13;

 Lower ends of the thermal conductor 16A (TE +) and the thermal conductor 16F (TE−) are respectively connected to the MOSFET of the pixel signal processor 3;

 The lower ends of the thermal conductor 16B (TE−), the thermal conductor 16C (TE +), the thermal conductor 16D (TE−) and the thermal conductor 16E (TE +) are connected in series.

Therefore, it can be amplified by the series connection of the fourth embodiment. In this case, in the case where the N thermal elements 4 are arranged in series, the thermoelectric power generated by the temperature difference is N times the pixel signal. The gate of the MOS transistor of the processing unit 3 is supplied with the voltage multiplied by N times.

Next, the effects of the embodiments of the present invention having the above configuration will be described.

When the stacked thermal image sensor to which the embodiments of the present invention are applied is operated, first, when the infrared ray is incident from the outside through the optical lens 17 as shown in FIG. 9, the incident infrared ray IR is The absorber 13 is focused on the rear surface of the optical lens 17.

Then, the absorber 13 of the heat sensing pixel portion 4 corresponding to the one pixel absorbs the heat of the incident infrared rays IR. Then, the metal member 14 coupled to the rear surface of the absorbent 13 transfers the infrared rays to the respective thermal conductors 16A (TE +) and 16B (TE-) of the thermoelectric cell member 15 located on the rear surface. To pass.

Here, the thermoelectric cell member 15 has a different thermoelectric shape according to the configuration of the thermal conductors, that is, the thermal conductors 16A (TE +) and 16B (TE-) are the first embodiment. In this case, heat is transferred from the metal member 14 by a thermoelectric effect by a thermoelectric junction, and transferred to the sensing terminal connectors 11 and 12 of the pixel signal processor 3, respectively.

On the other hand, when the thermal conductors 16A (TE +) and 16B (TE-) apply the second embodiment, heat is transferred from the metal member 14 by a pyroelectric effect due to a pyroelectric junction. The signal is transferred to the sensing terminal connectors 11 and 12 of the pixel signal processor 3, respectively.

 In addition, the heat conductors 16A (TE +) and 16B (TE−) are heat transferred from the metal member 14 due to a heat ion effect by a thermal ion junction when the third embodiment is applied. Are processed and transmitted to the sensing terminal connectors 11 and 12 of the pixel signal processor 3, respectively.

That is, when the infrared ray is absorbed by the thermal image sensor of the present invention to heat the absorber 13 as described above, the heat conductor of the thermoelectric cell member 15 coupled via the absorber 13 and the metal member 14 [ A temperature difference is also generated between 16A (TE +)] and the thermal conductor [16B (TE−)]. Therefore, as described above, when a temperature difference occurs between the thermal conductor 16A (TE +) and the thermal conductor 16B (TE-) of the thermoelectric cell member 15, the internal element effect of the thermoelectric cell member 15 is affected. This causes a potential difference.

Then, the MOSFET of the pixel signal processing unit 3 is opened through the sensing terminal connection parts 11 and 12 of the pixel signal processing unit 3 coupled to the lower part by the potential difference of the thermoelectric cell member 15 as described above. Since the current flows, the voltage of the out terminal of FIG. 6 is increased.

At this time, the pixel signal processor 3 initially switches on and then turns off the Tx and Rx terminals 6 and 7 as shown in FIG. 8 to control switching of the pixel signal processor 3.

Here, when the Tx and Rx terminals 6 and 7 are turned on and then turned off, electrons in the CT terminal (charge tank 8) flow out through the Vdd terminal 9.

After the above process, if a potential difference occurs between the thermal conductor 16A (TE +) and the thermal conductor 16B (TE-) of the thermoelectric cell member 15, electrons are transferred to the CT terminal 8 through the GND terminal. The amount of electrons introduced is proportional to the amount of IR applied and is proportional to the time of accumulation.

On the other hand, when the Tx is turned on and the charge collected in the CT terminal 8 is transferred to the FD diffusion unit 5 after the above process, the voltage Vout output by the FD diffusion unit 5 is proportional to the amount of electrons transferred. Will be lowered.

That is, according to the present invention as described above, each pixel device unit 1A-N formed by integrally stacking one pixel signal processing unit 3 and one thermal sensing pixel unit 4, that is, a thermal conductor [ The voltage obtained between 16A (TE +)] and the thermal conductor 16B (TE−) is amplified in the MOSFET structure of the pixel signal processing section 3. In addition, the image signal processor 17 receives the signals according to the infrared rays processed by the respective pixel device units 1A-N constituting each individual pixel, and then image-processes them to, for example, display or other output. Output to the device.

At this time, since each of the pixel device units (1A-N) constituting each individual pixel of the present invention as described above amplify and process the signal individually, there is no need for a separate large-capacity amplification circuit, so the sensor manufacturing cost is also significantly Can be reduced.

On the other hand, images obtained with thermal noise generally have poor quality. However, in order to prevent such thermal noise, the CT terminal 8 is preferably separated from the surface of the substrate. In the present invention, the pixel having the thermal sensing pixel portion 4 and the CT terminal 8 for detecting infrared heat is provided. This problem is solved by separately configuring the signal processing section 3.

Herein, the operation of the fourth embodiment of the present invention is generated by the N thermoelectric cell members 15, in which only the thermoelectric cell members 15 of the thermal sensing pixel part 4 are arranged in series with N thermoelectric elements. The increased N-fold thermal power is supplied to the gate of the pixel signal processor 3 by the lower end of the thermal conductor 16A (TE +) and the thermal conductor 16F (TE-) connected to the MOSFET of the pixel signal processor 3. Is detected and the rest of the process is processed in the same manner as the operations of the first to third embodiments.

As described above, according to the present invention, since the signal processing is performed separately for each infrared pixel, the noise characteristics can be improved and the sensing sensitivity can be considerably improved since a high-magnification amplifier circuit can be used at the bottom of the thermal infrared sensor. It can be very useful when applied to image sensors such as night vision glasses, fire detectors, and night driving.

  1 is an explanatory diagram for explaining an example of a conventional thermal image sensor structure.

  2 is an explanatory diagram illustrating a signal processing state of a conventional thermal image sensor.

  Figure 3 is a structural diagram illustrating an embodiment of the sensor of the present invention.

  4 is an explanatory diagram illustrating a signal processing structure of the sensor of the present invention.

  5 is an explanatory diagram for explaining a pixel signal processing state of the sensor of the present invention;

  6 is an equivalent circuit of one embodiment of the present invention.

  7 is an explanatory diagram for explaining a fourth embodiment of the present invention.

  8 is an equivalent circuit of the first to fourth embodiments of the present invention.

  9 is an explanatory diagram briefly explaining an embodiment of the sensor of the present invention.

 <Detailed Description of Codes>

 1A-N: pixel device portion 2: wafer substrate

 3: pixel signal processing unit 4: heat sensing pixel unit

 5: FD diffusion part 6: Tx terminal

 7: Rx terminal 8: CT terminal

 9: Vdd terminal 10: Vout terminal

 11: detection terminal connection 12: detection terminal connection

 13: absorber 14: metal member

 15: thermoelectric cell member 16A-B: thermal conductor

Claims (9)

A pixel signal processor configured to form a MOSFET structure pattern on the wafer substrate to process charge signals according to thermal potentials; And a plurality of pixel device units formed of a thermal sensing pixel unit which is formed on the MOSFET structure of the pixel signal processing unit and generates heat power proportional to the amount of infrared rays sensed from the outside. The semiconductor device of claim 1, wherein the pixel signal processor comprises: an FD diffusion unit arranged in a matrix on a semiconductor wafer substrate to output a voltage in proportion to the amount of electrons applied; Tx and Rx terminals provided between the horizontal columns of the FD diffusion unit and performing switching control of the pixel signal processing unit, a CT terminal for accumulating charge during the switching control operation of the pixel signal processing unit, and a charge of the CT terminal to be discharged. A wiring electrode part including a Vdd terminal and a Vout terminal formed between a horizontal column of the FD diffusion part and outputting a voltage output from the FD diffusion part to the outside; And a sensing terminal connection part connected to each of a plurality of terminals constituted by thermoelectric junctions of the thermosensitive pixel parts. The method of claim 1, wherein the heat sensing pixel portion and the absorber for absorbing heat of infrared (IR); A metal member installed at a lower end of the absorber to transfer heat of the absorber; It characterized in that it comprises a thermoelectric cell member consisting of a thermal conductor [(TE +), (TE-) consisting of a plurality of thermoelectric elements to be a thermoelectric junction between the metal member and the sensing terminal connection portion. Stacked thermal image sensor device. The semiconductor device of claim 1, wherein the pixel signal processor comprises: an FD diffusion unit arranged in a matrix on a semiconductor wafer substrate to output a voltage in proportion to the amount of electrons applied; Tx and Rx terminals provided between the horizontal columns of the FD diffusion unit and performing switching control of the pixel signal processing unit, a CT terminal for accumulating charge during the switching control operation of the pixel signal processing unit, and a charge of the CT terminal to be discharged. A wiring electrode part including a Vdd terminal and a Vout terminal formed between a horizontal column of the FD diffusion part and outputting a voltage output from the FD diffusion part to the outside; And a sensing terminal connection part connected to each of a plurality of terminals formed by a pyroelectric junction of the thermal sensing pixel part. The method of claim 1, wherein the heat sensing pixel portion and the absorber for absorbing heat of infrared (IR); A metal member installed at a lower end of the absorber to transfer heat of the absorber; And a thermoelectric cell member comprising a plurality of pyroelectric conductors ((TE +), (TE−)] formed of a plurality of pyroelectric elements so as to form a pyroelectric junction between the metal member and the sensing terminal connection portion. Stacked thermal image sensor device. The semiconductor device of claim 1, wherein the pixel signal processor comprises: an FD diffusion unit arranged in a matrix on a semiconductor wafer substrate to output a voltage in proportion to the amount of electrons applied; Tx and Rx terminals provided between the horizontal columns of the FD diffusion unit and performing switching control of the pixel signal processing unit, a CT terminal for accumulating charge during the switching control operation of the pixel signal processing unit, and a charge of the CT terminal to be discharged. A wiring electrode part including a Vdd terminal and a Vout terminal formed between a horizontal column of the FD diffusion part and outputting a voltage output from the FD diffusion part to the outside; Stacked thermal image sensor device characterized in that it comprises a sensing terminal connecting portion connected to each of the plurality of terminals formed by the thermal ion pixel (Thermionic junction) of the thermal sensing pixel portion. The method of claim 1, wherein the heat sensing pixel portion and the absorber for absorbing heat of infrared (IR); A metal member installed at a lower end of the absorber to transfer heat of the absorber; And a thermoelectric cell member including a plurality of thermal conductors ((TE +), (TE-)] formed of a plurality of thermal ion devices to form a thermal ion junction between the metal member and the sensing terminal connection part. Stacked thermal image sensor device characterized in that. A pixel signal processor configured to form a MOSFET structure pattern on the wafer substrate to process charge signals according to thermal potentials; Stacked on the MOSFET structure of the pixel signal processor, the absorber absorbing heat of infrared (IR), a metal member installed at a lower end of the absorber to transfer heat of the absorber, and between the metal member and the sensing terminal connection part. Stacked thermal image sensor device comprising a heat sensing pixel portion including a thermoelectric cell member for connecting a plurality of thermal conductors (TE +), (TE-) in series. 9. The thermoelectric cell member according to claim 8, wherein the thermoelectric cell member comprises a thermal conductor [16A (TE +)] and a thermal conductor [16B (TE-)], a thermal conductor [16C (TE +)] and a thermal conductor [16D (TE-)], a thermal conductor. Attaching an upper end of [16E (TE +)] and the heat conductor [16F (TE−)] to the metal member 14 attached to the absorber 13;  Lower ends of the thermal conductor 16A (TE +) and the thermal conductor 16F (TE−) are respectively connected to the MOSFET of the pixel signal processor 3;  Characterized in that the lower ends of the thermal conductors [16B (TE-)], thermal conductors [16C (TE +)], thermal conductors [16D (TE-)] and thermal conductors [16E (TE +)] are connected in series. Stacked thermal image sensor device.

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