KR20080084282A - Semiconductor chip, method of manufacturing the same, and semiconductor package using the semicondutor chip - Google Patents

Abstract

A semiconductor chip, a method for manufacturing the same, and a semiconductor package using the semiconductor chip are provided to decrease the thickness of the semiconductor chip and to promptly dissipate heat generated in the semiconductor chip by attaching a reinforcing member to a lower surface of a semiconductor body. Circuit units are formed in a semiconductor body(110). A bonding unit(120) is electrically connected to the circuit units and arranged on a first surface of the semiconductor body. An external electric signal is inputted into the bonding unit. A reinforcing member(130) is attached to a second surface of the semiconductor body opposite to the first surface, thereby reinforcing the stiffness of the semiconductor body. The second surface is grinded. The reinforcing member includes an adhesive agent being attached to a soft reinforcing plate and one surface of the reinforcing plate and attaching the reinforcing plate to the second surface of the semiconductor body. The reinforcing plate is made of one selected from glass, ceramic, plastic, and metals.

Description

Semiconductor chip, manufacturing method thereof, and semiconductor package using same {SEMICONDUCTOR CHIP, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE USING THE SEMICONDUTOR CHIP}

1 is a cross-sectional view of a semiconductor chip according to the present invention.

2A is a plan view illustrating a wafer on which semiconductor bodies are formed.

FIG. 2B is a cross-sectional view taken along line II ′ of FIG. 2A.

3 is a cross-sectional view for explaining a grinding process of removing a wafer back surface.

4 is an exploded perspective view of a semiconductor chip according to the present invention.

5 is a wafer level semiconductor package to which the semiconductor chip according to the present invention is applied.

6 is a cross-sectional view of a ball grid array semiconductor package to which the semiconductor chip according to the present invention is applied.

The present invention relates to a semiconductor chip, a method for manufacturing the same, and a semiconductor package using the same. More particularly, the present invention relates to a semiconductor chip, a method for manufacturing the same, and a semiconductor package using the same. .

In the semiconductor industry, a semiconductor package generally refers to a form in which a semiconductor chip, in which a microcircuit is designed, is sealed with a mold resin or ceramic so as to be protected from an external environment and mounted on an electronic device. In recent years, semiconductor chips are packaged for the purpose of improving the performance and quality of electronic devices through miniaturization, thinning, and multifunctionality of electronic devices, rather than packaging semiconductor chips for the purpose of enclosing, protecting, or simply mounting electronic devices. Doing. Therefore, the importance of semiconductor packages is increasing, and a wide variety of semiconductor packages have been developed.

Recently, the demand for high integration, increased memory capacity, multifunctionality, and high-density packaging of semiconductor devices has been accelerated, and one of the methods for meeting the above requirements is to stack a plurality of semiconductor chips vertically to make a stacked semiconductor package.

When the semiconductor chips are stacked vertically, the height of the stacked semiconductor package is inevitably increased compared to the height of the semiconductor package accommodating one semiconductor chip. In order to solve this problem, recently, the back surface of the wafer on which the semiconductor chips are formed is ground to a predetermined thickness to form a thin thickness of the semiconductor chip, and the semiconductor chips having the grinding process completed are stacked to form a thin laminated semiconductor package.

However, when the grinding process of removing the back surface of the wafer is performed as described above, the thickness of the wafer becomes very thin. Therefore, the semiconductor chip, which is conventionally cut from the wafer, or the semiconductor chips are stacked and the semiconductor chip is attached, In the wire bonding process of electrically connecting the semiconductor chips, handling problems such as cracks are frequently generated in the semiconductor chips, thereby lowering productivity and reliability.

In addition, when the amount of grinding and removing the back surface of the wafer is reduced to minimize the handling problem, the thickness of the wafer, that is, the semiconductor chip becomes thick, resulting in an increase in the thickness of the packaged semiconductor package.

In addition, in order to form a stacked semiconductor package in which two or more semiconductor chips are stacked, two or more wafers in a ground state are stacked, or when a wafer, such as electric and solder resist, is attached to the wafer, Problems arise in subsequent processes such as wafer cutting and attaching the semiconductor chip onto the substrate by self weight.

The present invention provides a semiconductor chip and a method of manufacturing the same by attaching a strength reinforcing member to the rear surface of the ground wafer to facilitate handling of the wafer and to minimize warpage, thereby improving product reliability and productivity.

In addition, the present invention provides a semiconductor package with a reduced thickness.

The semiconductor chip according to the present invention includes a semiconductor body having circuit portions formed therein, a bonding portion electrically connected to the circuit portions, arranged on a first surface of the semiconductor body, and receiving an external electrical signal, and facing the first surface. And a reinforcing member attached to the grounded second surface of the semiconductor body to reinforce the strength of the semiconductor body.

Here, the reinforcing member includes a hard reinforcing plate and an adhesive attached to one surface of the reinforcing plate and attaching the reinforcing plate to the second surface of the semiconductor body.

The reinforcing plate is formed of any one material selected from glass, ceramic, plastic, and metal to prevent bending of the semiconductor body.

In addition, in the method of manufacturing a semiconductor chip according to the present invention, the circuit parts are formed therein, and forming a plurality of semiconductor bodies separated by cutting lines on the upper surface of the substrate, the circuit parts on the first surface of the semiconductor body. Forming a bonding portion electrically connected to the semiconductor substrate, grinding and removing a lower surface of the substrate facing the first surface of the semiconductor body by a selected thickness, and applying strength of the semiconductor body to the lower surface of the ground substrate. Attaching a reinforcing member for reinforcing, and cutting and individualizing the substrate including the reinforcing member along the cutting line.

In addition, the semiconductor package according to the present invention includes a semiconductor body having circuit portions formed therein, a bonding portion electrically connected to the circuit portions and arranged on the first surface of the semiconductor body, and attached to the second surface of the semiconductor body. A semiconductor chip comprising a reinforcing member for reinforcing a strength of a semiconductor body, a substrate on which the semiconductor chip is mounted, and a connection pad on the upper surface on which the semiconductor chip is mounted is electrically connected to the bonding part, including the semiconductor chip. And a molding part surrounding the upper surface of the substrate and external connection terminals arranged on the lower surface of the substrate and electrically connected to the connection pads.

Here, the semiconductor chip is attached by a flip chip bonding method in which a bonding part of the semiconductor chip is directly connected to the connection pad, and the molding part covers the entire upper surface of the substrate including the side surface of the semiconductor chip so that the reinforcing member is exposed. Wrap

(Example)

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a semiconductor chip according to the present invention, Figure 4 is an exploded perspective view of a semiconductor chip according to the present invention. Here, when the II-II 'line | wire of FIG. 4 is cut | disconnected, the semiconductor chip cross section of FIG. 1 will appear.

1 and 4, the semiconductor chip 100 includes a semiconductor body 110, a bonding unit 120, and a reinforcing member 130.

Referring to FIG. 4, a semiconductor body 110 is formed on a silicon wafer 10 of high purity, and each semiconductor body 110 is formed by a transmission line 102 represented by arbitrary lines on the wafer 10. It is divided independently from each other. Thus, the semiconductor bodies 110 are arranged in a plurality of columns and rows on the wafer 10. Referring to FIG. 1, circuit portions 112 are formed inside each semiconductor body 110 to store and process data.

Referring to FIG. 1, the bonding part 120 is formed on a first surface of the semiconductor body 110, for example, an upper surface thereof, and is electrically connected to the circuit parts 112. The bonding unit 120 is electrically connected to the connection pads of the substrate in the semiconductor package manufacturing process to receive an external electrical signal. Preferably, the bonding unit 120 according to the present invention is a bonding pad.

The reinforcing member 130 is attached to the rear surface of the ground wafer 10, that is, the surface opposite to the first surface of the semiconductor body 110, thereby reinforcing the strength of the thinned wafer 130 by the grinding process. The reinforcing member 130 is thinner than the wafer and adhered to one surface of the rigid reinforcing plate 132 and the reinforcing plate 132 that is resistant to warpage and cracks, thereby adhering the reinforcing plate 132 to the rear surface of the wafer 10. 134.

Preferably, the reinforcing plate 132 is formed of materials such as ceramic, glass, plastic, and a metal having high thermal conductivity, and the size of the reinforcing plate 132 is the same as the size of the wafer or is slightly smaller than the size of the wafer. Form.

When the semiconductor chip 100 is formed by attaching the reinforcing member 130 to the lower surface of the ground wafer 10 as in the present invention, the semiconductor chip 100 which could not be thinly formed below a predetermined thickness due to a handing problem. By forming a thinner than the conventional thickness, the handling can manufacture the semiconductor chip 100, which is easier than the conventional, it is possible to minimize the defect of the semiconductor chip 100 in the semiconductor package process.

In addition, the reinforcing member 130 supports the thin wafer 10 in a subsequent process performed after the grinding process of removing the back surface of the wafer 10 to prevent the wafer 10 from being bent, thereby improving reliability and productivity of the product. This can be improved.

In addition, when the reinforcing member 130 is formed of a metal material having high thermal conductivity, heat dissipation efficiency is improved to prevent malfunction due to deterioration of the semiconductor chip 100.

Hereinafter, a semiconductor chip manufacturing process will be described with reference to FIGS. 1 to 4.

2A is a plan view illustrating a wafer on which semiconductor bodies are formed, and FIG. 2B is a cross-sectional view taken along line II ′ of FIG. 2A.

Referring to FIGS. 2A and 2B, a semiconductor body 110 in which circuit parts 112 are formed is formed on a wafer 10a through a semiconductor device manufacturing process such as deposition, photography, etching, and ion implantation. The semiconductor bodies 110 described above are formed in plural on the wafer 10a, and the semiconductor bodies 110 are independently separated by the cutting lines 102.

Referring to FIG. 2B, after the semiconductor bodies 110 are formed on the wafer 10a, the bonding portions 120 are electrically connected to the circuit portions 112 on the first surface, for example, the upper surface of the semiconductor body 110. Form them.

3 is a cross-sectional view for explaining a grinding process of removing a wafer back surface.

3, a grinding process of grinding and removing the wafer 10a from the rear surface of the wafer 10a facing the first surface of the semiconductor body 110 toward the upper surface of the wafer 10a is performed. The thickness of the wafer 10a is made thin by removing the wafer 10a near the circuit portion 112 of the semiconductor body 110, that is, to the A height. Preferably, the thickness of the wafer 10 where the grinding process is completed is thinner than the thickness of the conventional semiconductor chip.

When the grinding process is completed, as shown in FIG. 4, the size of the wafer 10 is positioned in a state in which one surface to which the adhesive 134 is attached is positioned to face the rear surface of the ground wafer 10, as shown in FIG. 4. Reinforcement member 130 having the same or slightly smaller size is attached to the backside of wafer 10.

Thereafter, the wafer 10 including the reinforcing member 130 is cut along the cutting line 102 indicated by arbitrary lines on the wafer 10, and the semiconductor chip 100 is individualized as shown in FIG. The manufacturing process of the chip 100 is completed.

Hereinafter, a semiconductor package using the semiconductor chip described above with reference to FIGS. 5 and 6 will be described.

5 is a wafer level semiconductor package to which the semiconductor chip according to the present invention is applied.

Referring to FIG. 5, the wafer level semiconductor package 200 according to the present invention is an external connection terminal to the bonding portion 120 of each semiconductor chip 100 in the state of the wafer 10 after the semiconductor chip 100 is completed. The solder bumps 140 used are further formed. Therefore, the detailed description of the wafer level semiconductor package 200 is omitted, and the same reference numerals are assigned to the same components as the semiconductor chip 100 shown in FIG. 1.

6 is a cross-sectional view of a ball grid array semiconductor package to which the semiconductor chip according to the present invention is applied.

The ball grid array semiconductor package 300 according to the present invention includes a semiconductor chip 100 including a semiconductor body 110, a bonding part 120, and a reinforcing member 130, and a substrate 310 on which the semiconductor chip 100 is mounted. , A molding part 320 surrounding the upper surface of the substrate 310 and a solder ball 330 used as an external connection terminal.

Here, in order to further highlight the feature according to the present invention, the ball chip array semiconductor package 300 having the semiconductor chip 100 attached in a flip chip manner so that the reinforcing member 130 is exposed to the outside of the molding part 320. Will be described and only described.

In the present embodiment, the ball grid array package 300 by flip chip bonding will be described. However, a ball grid array semiconductor package for electrically connecting the semiconductor chip and the substrate according to the present invention using a conductive wire may also be manufactured.

When the semiconductor chip 100 is mounted on the substrate 310 by a flip chip method, the bonding part 120a of the semiconductor chip 100 is formed to have a predetermined height on the bonding pad 122 and the bonding pad 122. And stud bumps 124 to be formed.

The substrate 310 is a printed circuit board on which connection pads 312, ball lands 314, circuit patterns (not shown), and via holes (not shown) are printed, and a semiconductor is formed in the center of the upper surface of the substrate 310. A chip attaching region to which the chip 100 is attached is provided.

The connection pads 132 are formed on the upper surface of the substrate 310 to electrically connect the semiconductor chip 100 and the substrate 310. The connection pads 312 are arranged to bond with and correspond to the inside of the chip attachment region.

Here, in the case of electrically connecting the bonding portion 120 of the semiconductor chip, that is, the bonding pad and the connection pad 312 of the substrate 310 by using a conductive wire, the connection pads 312 are arranged outside the chip attaching area. The connection pads 312 are arranged in the same direction in which the bonding pads 120 are arranged in the outer side of the chip attaching region.

The ball lands 314 are arranged on the bottom surface of the substrate 310, and solder balls 330 are connected to each ball land 314. The ball lands 314 are electrically connected to the connection pads 312 formed on the upper surface of the substrate 310 by circuit patterns and via holes.

The molding part 320 is to protect the semiconductor chip 100 from the external environment, and the molding part 130 is formed to surround the entire upper surface of the substrate 310 including the side surface of the semiconductor chip 100. Therefore, the reinforcing member 130 of the semiconductor chip 100 is exposed to the outside of the molding part 320 as shown in FIG. 6. In this case, the reinforcing plate 132 of the semiconductor chip 100 preferably uses a metal having high thermal conductivity.

As such, when the molding part 320 is formed such that the metal reinforcing plate 132 is exposed to the outside, heat generated in the circuit part 112 may be quickly released to the outside due to the operation of the semiconductor chip 100. Therefore, the malfunction of the ball grid array semiconductor package 300 according to the present invention can be prevented.

The solder ball 330 electrically connects the memory module to which the ball grid array semiconductor package 300 is finally mounted and the semiconductor package 300, and is formed of a spherical solder.

When the semiconductor package 200 or 300 is manufactured by applying the semiconductor chip according to the present invention, the semiconductor chip is easily handled and the thickness of the semiconductor package 200 or 300 is thin. In addition, when the reinforcing member 130 is formed of a metal material having high thermal conductivity, the heat dissipation efficiency is improved to prevent malfunction of the semiconductor package 200 or 300 due to deterioration of the semiconductor chip 100, thereby improving product reliability. Can improve.

Although the present invention has been shown and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. And one of ordinary skill in the art that the present invention can be modified.

As described in detail above, when the semiconductor chip is formed by attaching a reinforcing member to the lower surface of the semiconductor body, it is easy to handle a thin semiconductor chip, thereby minimizing defects of the semiconductor chip, There is an effect that can be formed thin.

In addition, when the reinforcing member having a high thermal conductivity is attached to the lower surface of the semiconductor body, heat generated from the semiconductor chip can be quickly released to the outside, thereby preventing malfunction of the semiconductor chip.

Claims (6)

A semiconductor body having circuit parts formed therein; A bonding part electrically connected to the circuit parts, arranged on a first surface of the semiconductor body, and receiving an external electrical signal; And And a reinforcing member attached to the second surface of the semiconductor body opposite to the first surface to reinforce the strength of the semiconductor body. The method of claim 1, And the reinforcing member includes a hard reinforcing plate and an adhesive attached to one surface of the reinforcing plate and attaching the reinforcing plate to the second surface of the semiconductor body. The method of claim 2, The reinforcing plate is a semiconductor chip, characterized in that formed of any one material selected from glass, ceramic, plastic and metal to prevent bending of the semiconductor body. Forming a plurality of semiconductor bodies formed on the upper surface of the substrate, the circuit parts being formed therein and separated by cutting lines; Forming a bonding portion electrically connected to the circuit portions on the first surface of the semiconductor body; Grinding and removing the lower surface of the substrate opposite the first surface of the semiconductor body by a selected thickness; Attaching a reinforcing member to reinforce the strength of the semiconductor body on a lower surface of the ground substrate; And And cutting the substrate including the reinforcing member along the cutting line and individualizing the substrate. A semiconductor body having circuit parts formed therein, a bonding part electrically connected to the circuit parts and arranged on a first surface of the semiconductor body, and a reinforcing member attached to a second surface of the semiconductor body to reinforce the strength of the semiconductor body; A semiconductor chip comprising; A substrate on which the semiconductor chip is mounted and connection pads electrically connected to the bonding part are formed on an upper surface of the semiconductor chip; A molding part surrounding an upper surface of the substrate including the semiconductor chip; And And external connection terminals arranged on a bottom surface of the substrate and electrically connected to the connection pads. The method of claim 5, wherein The semiconductor chip is attached by a flip chip bonding method in which a bonding part of the semiconductor chip is directly connected to the connection pad, and the molding part surrounds the entire upper surface of the substrate including the side surface of the semiconductor chip so that the reinforcing member is exposed. A semiconductor package characterized by the above-mentioned.

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