KR20080056399A - Device for formng inert gas ambient and laser annealing apparatus using the same device - Google Patents

Abstract

An apparatus for forming an inert gas atmosphere is provided to shorten an interval of process time by performing a laser annealing process in an inert gas atmosphere without forming vacuum in a chamber of a laser annealing apparatus. A main body(30) is disposed between a transparent window and a stage in a chamber wherein a slit penetrates a gap between the upper and lower surfaces of the main body so that laser light can pass through. A flow path part penetrates the main body, interconnecting the outside of the main body and the slit to introduce the inert gas outside the main body into the slit. A plurality of guide members(70) are formed along the circumference of the main body to be separated upward from a substrate mounted on the stage, guiding the exhaust of inert gas so that the inert gas introduced into the upper surface of the substrate through the slit is exhausted along the plasma direction of the substrate. The inert gas exhausted through the flow path part and the slit is exhausted through a gap between the upper surface of the substrate and the lower surface of the guide member when the substrate is mounted on the stage. The guide member can be disposed between the lower surface of the main body and the upper surface of the substrate.

Description

Inert gas atmosphere forming apparatus and laser annealing apparatus using the same {Device for formng inert gas ambient and laser annealing apparatus using the same device}

1 is a schematic exploded perspective view of an inert gas atmosphere forming apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a schematic perspective view of the inert gas atmosphere forming apparatus shown in FIG. 1 coupled; FIG.

3 is a schematic perspective view of the upper plate shown in FIG. 2 upside down.

4 is a schematic cross-sectional view taken along the line IV-IV of FIG. 2.

5 is a schematic cross-sectional view of an inert gas atmosphere forming apparatus according to another embodiment of the present invention.

FIG. 6 is an actual photograph of the inert gas atmosphere forming apparatus shown in FIG. 1.

7 is a schematic configuration diagram of a laser annealing apparatus according to the present invention.

FIG. 8 is a graph showing oxygen concentration in a region to which a laser is irradiated while operating the laser annealing apparatus shown in FIG. 7.

FIG. 9 is a scanning micrograph of a substrate subjected to laser annealing after filling a chamber with nitrogen gas in a conventional laser annealing apparatus.

10 is an atomic force micrograph of a substrate subjected to laser annealing after filling a chamber with nitrogen gas in a conventional laser annealing apparatus.

FIG. 11 is a scanning electron micrograph of a substrate subjected to laser annealing in the laser annealing apparatus shown in FIG. 7.

12 is an atomic microscope photograph of a substrate subjected to laser annealing in the laser annealing apparatus shown in FIG. 7.

<Explanation of symbols for the main parts of the drawings>

100 ... inert gas atmosphere forming device 200 ... laser annealing device

10 ... chambers 21, 22, 23, 24 ... stage

30 ... body 40 ... top plate

50 ... lower plate 60 ... flow section

70 ... guide member 90 ... oxygen sensor

The present invention relates to a laser annealing apparatus for crystallizing an amorphous silicon liquid crystal display substrate with polysilicon by irradiating a laser beam, and more particularly, laser annealing can be performed while maintaining a region to which the laser is irradiated at atmospheric pressure. An apparatus and an apparatus for forming a localized region to which a laser is irradiated in an inert gas atmosphere.

Glass substrates are generally used as substrates such as organic light emitting diode displays or liquid crystal displays. When amorphous silicon is used as a switching element of a glass panel (LCD panel) using glass as a substrate, not only the electrical characteristics and reliability of the panel driving element are deteriorated, but also a large area of the display element becomes difficult. Therefore, in order to increase the area of the display device or to improve the resolution and the brightness, it is preferable to use polycrystalline silicon having excellent electrical characteristics (for example, field effect mobility), high frequency operating characteristics, and low leakage current as a switching element instead of amorphous silicon.

Low Temparature Poly Silicon (LTPS) thin film transistor, a polycrystalline silicon switching element, is formed by depositing an amorphous silicon layer and crystallizing it. Excier laser annealing (ELA) is widely used as a crystallization method. The excimer laser annealing method is a method of inducing vertical growth of crystals and is evaluated as an optimal method for mass production of substrates due to its excellent uniformity over the entire substrate.

However, when a large amount of oxygen is present in the chamber during the conventional excimer laser annealing process, the surface roughness of the substrate is negatively affected by the oxidation reaction of oxygen and silicon, which causes many problems in subsequent processes. Accordingly, the conventional laser annealing apparatus requires a vacuum system for forming the entire interior of the chamber in a vacuum or inert atmosphere. In addition, a vacuum system is also required for a load rock chamber and a transfer chamber for loading and unloading a substrate, instead of vacuuming only the inside of the process chamber in which the annealing process is performed.

Thus, the conventional laser annealing device has a problem that the manufacturing cost of the device is increased because the vacuum system must be built in each chamber. In addition, as the process of making each chamber into a vacuum through a vacuum system is accompanied by a long process time, there is a limit in improving productivity.

The present invention is to solve the above problems, the laser annealing can be performed in an inert gas atmosphere without forming a vacuum, so that the process time is shortened, while the productivity is improved, the structure of the laser annealing is improved so that the crystallization of the substrate can be made well The purpose is to provide a device.

Another object of the present invention is to provide an apparatus capable of forming an inert gas atmosphere locally in a region in which a laser of a substrate is irradiated in a laser annealing apparatus.

Laser annealing apparatus according to the present invention for achieving the above object, the transparent window through which the laser light can pass is attached to the upper surface, and installed in the chamber along the X-axis and Y-axis direction perpendicular to each other It is characterized by further comprising a stage on which the substrate is mounted reciprocally and mounted thereon, further comprising an inert gas atmosphere forming apparatus.

Inert gas atmosphere forming apparatus for achieving another object of the present invention is installed in the laser annealing apparatus, disposed between the transparent window of the chamber and the stage, the slit penetrating between the upper surface and the lower surface so that the laser light can pass through The main body formed therethrough and the flow path portion through which the inert gas from the outside of the main body flows into the inside of the slit and the substrate mounted on the upper surface of the stage by mutually communicating the outside of the main body and the slit. A plurality of guide members are disposed along the circumference of the main body so as to be spaced apart from each other, and guide the discharge of the inert gas so that the inert gas introduced into the upper surface side of the substrate through the slit is discharged along the plane direction of the substrate, The inert gas emitted through the flow path and the slit is Whether when the substrate is mounted is characterized in that the discharge through between the lower surface of the upper surface of the substrate and the guide member.

According to the present invention, the flow path portion, which is spaced apart from each other along the longitudinal direction of the main body and in communication with the outside of the main body, and are arranged long along the longitudinal direction of the main body and communicating with the inside of the slit It is preferred that the outlet and the connection portion for communicating the outlet and the plurality of inlets are formed, the flow path portion is disposed on both sides of the main body, respectively.

In addition, according to the present invention, the main body, the first slit disposed in the longitudinal direction to pass through the laser light and a pair of first grooves formed in the longitudinal direction on both sides of the lower surface is formed in the upper portion The plate and the plurality of inlets are respectively disposed on both sides, the second slit disposed corresponding to the first slit so as to pass through the laser light r and the plurality of inlets in communication with the pair of the upper plate A lower plate having a pair of second grooves disposed on both sides of an upper surface thereof so as to correspond to the first grooves, wherein the inert gas introduced into the plurality of inlets is formed in the first grooves and the second grooves. And guided along the connecting portion formed through the outlet port formed between the end of the first groove and the top end of the lower plate. To be preferred.

Hereinafter, a laser annealing apparatus according to a preferred embodiment of the present invention will be described in more detail with reference to FIG. 8, and a detailed description of the inert gas atmosphere forming apparatus will be described later.

8 is a schematic configuration diagram of a laser annealing apparatus according to the present invention.

Referring to FIG. 8, the laser annealing apparatus 200 according to the preferred embodiment of the present invention includes a chamber 10, a stage 20, and an inert gas atmosphere forming apparatus 100.

The chamber 10 is a place where a laser annealing process is performed, and a stage 20 to be described later is disposed inside the chamber 10. The transparent window 11 made of quartz is attached to the upper surface of the chamber 10. The laser r oscillated from the excimer laser oscillator (not shown) is irradiated into the chamber 10 through the transparent window 11. Meanwhile, an import gate 12 into which the substrate s to be annealed is carried is installed at one side of the chamber 10, and an export gage to which the substrate s at which the annealing is completed is carried out to the other side of the chamber 10. Tr 13 is installed. On the other hand, the pressure inside the chamber 10 maintains a pressure above atmospheric pressure.

The stage 20 is for reciprocating the substrate s mounted on the upper surface in the X-axis direction and the Y-axis direction perpendicular to the X-axis direction, and is not composed of a single component but a plurality of plates. It consists of a combination of (21,22,23,24). That is, the base plate 21 is fixedly installed on the bottom surface of the chamber 10, and the X-axis plate 22 reciprocating along the X-axis direction is disposed on the base plate 21. On the plate 22, a Y-axis plate 23 reciprocating along the Y-axis direction is provided. The loading plate 24 on which the substrate s is mounted is installed on the Y-axis plate 23. A linear guide (not shown) disposed along the X-axis direction is installed on the upper surface of the base plate 21, and the X-axis plate 21 is mounted on the linear guide and reciprocated. Similarly, a linear guide (not shown) disposed along the Y-axis direction is provided on the upper surface of the X-axis plate 21, and the Y-axis plate 23 is installed on the linear guide and reciprocated. The substrate s is mounted on an upper surface of the loading plate 24, and clamping means such as a chuck is installed to prevent the substrate s from being moved when the annealing process is performed.

Inert gas atmosphere forming apparatus 100 according to a preferred embodiment of the present invention is disposed between the transparent window 11 and the loading plate 24 to form a local region irradiated with the laser (r) in an inert gas atmosphere will be. Hereinafter, the inert gas atmosphere forming apparatus 100 will be described in more detail with reference to the accompanying drawings.

1 is a schematic exploded perspective view of an inert gas atmosphere forming apparatus according to a preferred embodiment of the present invention, FIG. 2 is a schematic perspective view of a state in which the inert gas atmosphere forming apparatus shown in FIG. 1 is coupled, and FIG. 4 is a schematic perspective view of the top plate shown in an inverted state, and FIG. 4 is a schematic cross-sectional view taken along the line IV-IV of FIG. 2.

1 to 4, an inert gas atmosphere forming apparatus 100 according to a preferred embodiment of the present invention includes a main body 30, a flow path part 60, and a plurality of guide members 70.

The main body 30 is fixed to the chamber 10 by being in close contact with the lower side of the transparent window 11, and a slit 1 penetrating between an upper surface and a lower surface is formed to allow the laser light r to pass therethrough. More specifically, the body 30 is composed of an upper plate 40 and a lower plate 50.

The upper plate 40 is formed in a plate shape is fixed to the lower side of the transparent window 11 of the chamber 10. A first slit 41 penetrating between the upper and lower surfaces is formed at the center of the upper plate 40. The first slit 41 is for passing the laser light r and is formed long in the longitudinal direction of the upper plate 40. In addition, a pair of first grooves 42 and 43 are formed at both sides of the first slit 41 on the lower surface of the upper plate 40. The pair of first grooves 42 and 43 are also elongated along the longitudinal direction of the upper plate 40, and the cross-sectional shape thereof is substantially trapezoidal, as shown in FIG.

The lower plate 50 is coupled to the lower side of the upper plate 40, and a second slit 51 is formed at a position corresponding to the first slit 41 of the upper plate 40. The second slit 51 is also formed long along the longitudinal direction of the lower plate 50. The slit 1 of the main body 30 is formed by combining the first slit 41 of the upper plate 40 and the second slit 51 of the lower plate 50. The laser beam r is irradiated onto the substrate s mounted on the loading plate 24 through the slit 1.

In addition, on both sides of the second slit 51 of the lower plate 50, a pair of second grooves 52 and 53 at positions corresponding to the pair of first grooves 42 and 43 of the upper plate 40. ) Is formed. The pair of second grooves 52 and 53 are also formed long along the longitudinal direction of the lower plate 50. However, the width of the pair of second grooves 52 and 53 is narrower than that of the pair of first grooves 42 and 43, and the upper plate 40 and the lower plate 50 are coupled to each other. The pair of second grooves 52 and 53 are disposed to be biased toward the ends of the pair of first grooves 42 and 43. On the other hand, a plurality of inert gas inlets (61, 62) for introducing an inert gas into the slit (l) of the main body 30 is formed on both side surfaces of the lower plate (50). The plurality of inert gas inlets 61 and 62 are spaced apart from each other along the longitudinal direction of the lower plate 50. In addition, the plurality of inert gas inlets 61 and 62 communicate the pair of second grooves 52 and 53 and the outside of the lower plate 50 with each other. An inert gas injection port 69 for coupling with an inert gas injection tube (not shown) is coupled to the inert gas inlets 61 and 62.

The flow path part 60 is for introducing external inert gas into the slit l of the main body 30, and communicates with the slit l and the outside of the main body 30 through the main body 30. Let's do it. Moreover, it is arrange | positioned at both sides of the main body 30 of this flow path part 60, respectively. With reference to FIG. 4, the flow path part 60 is demonstrated in more detail. Referring to FIG. 4, the flow path part 60 includes a plurality of inlets 61 and 62, an outlet 68, and a connection 67. The plurality of inlets 61 and 62 are disposed at both sides of the lower plate 50 as described above. The connecting portion 67 is formed by a pair of first grooves 42 and 43 provided on the upper plate 40 and a pair of second grooves 52 and 53 provided on the lower plate 50. That is, the second groove portion 53 is in communication with the first groove portion 43, the first groove portion 43 is closed by the horizontal surface 56 and the inclined surface 57 of the upper surface of the lower plate 50 inactive It forms a predetermined space through which gas can pass. The connecting portion 67 is formed long along the longitudinal direction of the lower plate 50. The outlet 68 is formed between the ends of the first grooves 42 and 43 and the upper end of the lower plate 50, that is, the end of the inclined surface 57. The outlet 68 is formed long along the longitudinal direction of the lower plate 50, similar to the connecting portion 67, and communicates with the second slit 51 of the lower plate 50.

The inert gas guided along the flow path part 60 having the above configuration proceeds sequentially along the first horizontal direction d1, the vertical direction d2, the second horizontal direction d3, and the inclined direction d4. . That is, the inlets 61 and 62 of the lower plate 50 are formed horizontally from the outside of the main body 30 along the width direction of the main body 30 so that the ball active gas may have the first horizontal direction d1. Proceed accordingly. The inert gas having passed through the inlets 61 and 62 passes through the second grooves 52 and 53 of the lower plate 50, and the second grooves 52 and 53 have a height direction of the main body 30. Accordingly, it is formed vertically from the lower side to the upper side so that the inert gas proceeds along the vertical direction d2. The inert gas that has passed through the second grooves 52 and 53 passes through the first grooves 42 and 43, and more specifically, the horizontal surface 56 of the upper surfaces of the first grooves 42 and 43 and the lower plate 50. Passed by). This region is formed horizontally from the outside of the main body 30 along the width direction of the main body 30 so that the inert gas travels along the second horizontal direction d2. The second horizontal direction d3 is formed at a higher position than the first horizontal direction d1. Finally, the inert gas passes between the first grooves 42 and 43 and the inclined surface 57 of the upper surface of the lower plate 50. This region is formed to be inclined with respect to the horizontal width direction of the main body 30, so that the inert gas passes through the inclined direction d4 and is discharged to the slit 1 through the outlet 68. In the present embodiment, the inert gas is nitrogen gas, but other gases such as argon may be used.

On the other hand, the plurality of guide member 70 is disposed along the circumference of the main body 40, in this embodiment are arranged on each of the four side of the main body. The guide member 70 is composed of a vertical portion 71 and a horizontal portion 72. The vertical portion 71 is disposed perpendicular to the substrate s mounted on the loading plate 24 and is fixed to the side of the lower plate 50. The horizontal portion 72 is bent from the vertical portion 71 and disposed in the same direction as the plane direction of the substrate s. The horizontal portion 72 is spaced upwardly from the substrate s mounted on the loading plate 24, more specifically, between the substrate s and the lower surface of the lower plate 50, thereby providing a substrate s. A gap is formed between the upper surface of the lower surface and the lower surface of the horizontal portion 72. This gap is formed to approximately 1mm ~ 20mm, in this embodiment was to be 7mm. The inert gas passing through the slit 1 of the main body 30 is discharged between the upper surface of the substrate s and the lower surface of the horizontal portion 72 of the guide member 70. In addition, the nitrogen gas passing below the slit l, that is, through the local region to which the laser is irradiated, is not randomly discharged in all directions but only through a narrow gap between the guide member horizontal portion 72 and the substrate s. As it is discharged, nitrogen gas can be discharged forming a laminar flow. The guide member 70 guides nitrogen gas to be discharged while forming a laminar flow.

In the present embodiment, the guide member 70 has been described and illustrated as consisting of the vertical portion 71 and the horizontal portion 72, but is not necessarily limited thereto, and replaces the vertical portion 71 to replace the inclined portion 73. It is also possible to form such an embodiment, which is illustrated in FIG. 5. Referring to FIG. 5, the inert gas atmosphere forming apparatus 100 according to another embodiment of the present invention includes an inclined portion 71 and an inclined portion 73. The inclined portion 73 is inclined with respect to the plane of the substrate s and is fixed to the lower plate 50. The horizontal portion 72 is formed to be bent at an angle from the inclined portion 73 and disposed in parallel with the substrate s. Members having the same reference numerals as the embodiments shown in FIGS. 2 to 4 in the embodiment shown in FIG. 5 have the same configuration and perform the same function, and thus, a separate description thereof will be omitted.

On the other hand, the inert gas atmosphere forming apparatus 100 according to a preferred embodiment of the present invention includes an oxygen sensor 90. This oxygen sensor 90 is for measuring the concentration of oxygen existing in the local region (lower side of the slit) to which the laser r is irradiated through the slit 1. As described above, the presence of a large amount of oxygen in the laser irradiated region may oxidize the substrate (s) and adversely affect the surface roughness, so that the concentration of the local region is continuously measured through the oxygen sensor 90. . Oxygen sensor 90 may be employed in various forms as a known member, it is coupled to the guide member (70).

Hereinafter, a state of use of the laser annealing apparatus 200 equipped with the inert gas atmosphere forming apparatus 100 according to the preferred embodiment of the present invention will be described.

In the laser annealing apparatus 200 according to the preferred embodiment of the present invention, the substrate s is loaded through the loading gate 12 and mounted on the loading plate 24. The space between the upper surface of the substrate s and the horizontal portion 72 of the guide member 70 is disposed to be 7 mm. The interior of the chamber 10 allows the atmospheric pressure to be maintained. In the inert gas atmosphere forming apparatus 100, when nitrogen gas is injected through the flow path part 60, the nitrogen gas flows into the upper surface of the substrate s through the slit l as indicated by arrow a in FIG. 4. do. In this embodiment, the flow rate of nitrogen gas was variously injected in a range of 10 ~ 100 SLM (Standard Liter per Minute).

Thereafter, nitrogen gas is discharged between the upper surface of the substrate s and the lower surface of the horizontal portion 72 of the guide member 70. In this process, a nitrogen gas atmosphere is formed in the local region to which the laser r is to be irradiated, that is, under the slit 1. The laser r oscillated from the excimer laser oscillator (not shown) anneals the substrate s by being irradiated onto the substrate s through the transparent window 11 and the slit 1. The substrate s on which the annealing is completed is discharged from the chamber 10 through the export gate 13.

During the above process, the oxygen concentration of the local region irradiated with the laser r was measured, and the result is shown in FIG. 8. FIG. 8 is a graph showing oxygen concentration in a region to which a laser is irradiated while operating the laser annealing apparatus shown in FIG. 7. Referring to FIG. 8, when nitrogen is injected in the range of 10 to 100 SLM, the concentration of oxygen drops to 50 ppm or less at about 20 seconds. Since the concentration of 50 ppm does not have a negative effect on the substrate s during annealing, it can be seen that the annealing of the substrate is performed well even if only the region where the laser is irradiated in the atmospheric pressure is formed in the nitrogen atmosphere.

In addition, in order to prove the effect of the present embodiment, the substrate 10 crystallized through a conventional annealing apparatus filled with nitrogen gas after forming the chamber 10 in a vacuum, and the annealing apparatus 200 according to the preferred embodiment of the present invention. The crystallized substrates were compared by scanning electron microscope (SEM) and atomic force microscope (AFM). FIG. 9 is a scanning micrograph of a substrate in which a laser is annealed after filling a chamber with nitrogen gas in a conventional laser annealing apparatus, and FIG. 10 is a substrate in which a laser is annealed after filling a chamber with nitrogen gas in a conventional laser annealing apparatus. A scanning electron microscope photograph of a substrate subjected to laser annealing in the laser annealing apparatus shown in FIG. 7, and FIG. 12 is an atomic microscope image of a substrate subjected to laser annealing in the laser annealing apparatus shown in FIG. 7. It is a photograph. In the comparative experiment, the concentration of oxygen in the chamber of the conventional annealing apparatus was controlled to 20 ppm or less, and in this embodiment, nitrogen was injected into 100SLM. In addition, the energy density of the laser was 320mJ / Cm2 for both devices to be compared, and all conditions such as annealing time were the same. Scanning electron micrographs (FIG. 9) and atomic force micrographs (FIG. 10) of the substrate crystallized by the conventional annealing apparatus are scanning electron microscopes of the substrate crystallized by the laser annealing apparatus 200 according to the preferred embodiment of the present invention. Comparing the photograph (FIG. 11) and the atomic force micrograph (FIG. 12), it can be seen that the two substrates have little difference in similar surface mounting.

That is, even when the inside of the chamber 10 is not formed in a vacuum, even when the nitrogen atmosphere is formed only in the local region to which the laser r is irradiated through the inert gas atmosphere forming apparatus according to the present invention, the substrate s through annealing. It can be confirmed that the crystallization of.

Although the present invention has been described with reference to one embodiment shown in the accompanying drawings, this is merely exemplary, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Could be. Accordingly, the true scope of protection of the invention should be defined only by the appended claims.

As described above, the inert gas atmosphere forming apparatus according to the present invention can shorten the process time by enabling laser annealing in an inert gas atmosphere without forming a vacuum in the chamber of the laser annealing apparatus, while improving productivity, There is an advantage that the crystallization of the substrate is made to the desired degree.

Claims (12)

A laser having a transparent window on which the laser light passes can be attached to the upper surface, and a stage disposed in the chamber and reciprocating along the mutually perpendicular X-axis and Y-axis directions and on which an amorphous substrate is mounted. As installed in the annealing device, A main body disposed between the transparent window of the chamber and the stage and having a slit penetrating between an upper surface and a lower surface to allow the laser light to pass therethrough; A passage portion for introducing an inert gas outside the main body into the slit by passing the main body through the main body and communicating with the outside of the main body and the slit; A plurality of the inert gas is disposed along the circumference of the main body so as to be spaced upward from the substrate mounted on the upper surface of the stage, and the inert gas introduced into the upper surface side of the substrate through the slit is discharged along the plane direction of the substrate. With a guide member for guiding the discharge, The inert gas emitted through the flow path and the slit is discharged between the upper surface of the substrate and the lower surface of the guide member when the substrate is mounted on the stage. The method of claim 1, And each of the guide members is disposed between a lower surface of the main body and an upper surface of the substrate. The method of claim 1, The guide members each include a vertical portion disposed in a direction perpendicular to the substrate and fixed to the main body, and a horizontal portion bent from the vertical portion and disposed in the same direction as the plane direction of the substrate. And the inert gas is discharged between an upper surface of the substrate and a lower surface of the horizontal portion. The method of claim 1, Each of the guide members includes an inclined portion which is disposed in an inclined direction with respect to the substrate and is fixed to the main body, and a horizontal portion which is bent at an angle from the inclined portion and disposed in the same direction as the plane direction of the substrate, And the inert gas is discharged between an upper surface of the substrate and a lower surface of the horizontal portion. The method according to claim 3 or 4, Inert gas atmosphere forming apparatus, characterized in that the width direction of the horizontal portion of the guide member is 10mm ~ 150mm. The method of claim 1, The flow path portion, a plurality of inlet spaced apart from each other along the longitudinal direction of the main body and in communication with the outside of the main body, the outlet is arranged long along the longitudinal direction of the main body and in communication with the inside of the slit, and The connection portion is formed to communicate the outlet and the plurality of inlets, The flow path portion is inert gas atmosphere forming apparatus, characterized in that arranged on each side of the main body. The method according to claim 1 or 6, Inert gas passing through the flow path portion, A first horizontal direction formed inward from the outside of the main body along the width direction of the main body, a vertical direction formed from the lower side of the main body upward along the height direction of the main body, and an outer side of the main body along the width direction of the main body; An inert gas, which is disposed inclined with respect to the width direction of the main body and is inclined with respect to the width direction of the main body, and sequentially flows along the inclined direction formed from the upper side to the lower side of the main body to flow into the slit; Atmosphere forming device. The method of claim 6, The main body, An upper plate having a first slit disposed long in the longitudinal direction to allow the laser light to pass through, and a pair of first grooves disposed in the longitudinal direction on both sides of the lower surface thereof; The plurality of inlets are respectively disposed on both side surfaces, the second slit disposed corresponding to the first slit so as to pass through the laser light (r) and the plurality of inlets in communication with the pair of first grooves of the upper plate A lower plate having a pair of second grooves disposed on both sides of an upper surface thereof so as to correspond to The inert gas introduced into the plurality of inlets is guided along the connection portion formed by the first groove portion and the second groove portion and is formed through the outlet port formed between an end of the first groove portion and an upper surface end of the lower plate. Inert gas atmosphere forming apparatus, characterized in that discharged toward the slit. The method of claim 1, And an oxygen sensor coupled to the guide member so as to measure the oxygen concentration between the lower surface of the main body and the upper surface of the substrate. The method of claim 1, The inert gas atmosphere forming apparatus, characterized in that the inert gas is nitrogen. A laser having a transparent window through which a laser beam can pass is attached to the upper surface thereof, and a stage installed in the chamber and reciprocating along the directions of X and Y axes perpendicular to each other and mounted on the substrate. In the annealing apparatus, A laser annealing apparatus, further comprising the inert gas atmosphere forming apparatus according to any one of claims 1 to 10. The method of claim 11, And the pressure inside the chamber is greater than or equal to atmospheric pressure.

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