KR20080052968A - Display panel, display apparatus having the same and method of fabricating the same - Google Patents

Abstract

A display panel, a display device having the same, and a method for manufacturing the same are provided to reduce the whole size by providing a liquid crystal panel comprising an auxiliary capacitor, which boosts and outputs the second driving voltage and a driver chip, which receives the second driving voltage and creates the first driving voltage, without the necessity of installing an additional capacitor to boost the second driving voltage at a flexible circuit part connected to the liquid crystal panel. A display device comprises a screen display part(DA), a driving circuit part(PA2), and a peripheral part(PA1). The screen display part includes a storage capacitor which comprises a pair of storage electrodes. The first insulating layer is inserted between the storage electrodes. The driving circuit part supplies an image signal to the screen display part. The peripheral part, electrically connected to the driving circuit part, includes an auxiliary capacitor which comprises a pair of auxiliary capacitor electrodes. The second insulating layer is inserted between the auxiliary capacitor electrodes. The permittivity of the first insulating layer is lower than the permittivity of the second insulating layer.

Description

DISPLAY PANEL, DISPLAY APPARATUS HAVING THE SAME AND METHOD OF FABRICATING THE SAME}

1 is a perspective view illustrating a display panel assembly according to an exemplary embodiment of the present invention.

FIG. 2 is a plan view illustrating the first substrate illustrated in FIG. 1.

3 is a cross-sectional view of a first substrate according to an embodiment of the present invention.

4A to 4H are cross-sectional views illustrating a process of forming the first substrate illustrated in FIG. 3.

5 is a cross-sectional view of a first substrate according to another embodiment of the present invention.

6A through 6F are cross-sectional views illustrating a process of forming the first substrate illustrated in FIG. 5.

7 is an exploded perspective view illustrating a display device according to an exemplary embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: first substrate 110: transparent substrate

120: thin film transistor 127: storage capacitor

130: pixel electrode 140: auxiliary capacitor

200: second substrate 320: driving chip

340: flexible circuit board 360: gate driving circuit

400: backlight assembly 500: top chassis

600: display device

The present invention relates to a display panel, a display device having the same, and a method of manufacturing the same. More particularly, the present invention relates to a display panel, a display device having the same, and a method of manufacturing the same.

Recently, display devices such as monitors or televisions are required to be lighter and thinner, and cathode ray tubes (CRTs) are being replaced by flat panel displays (FPDs) according to such demands.

In general, the flat panel display includes a liquid crystal display including a first substrate having a thin film transistor (TFT), a second substrate having a color filter layer, and a liquid crystal interposed between the first substrate and the second substrate. Devices include a liquid crystal display (LCD), an organic light emitting diode (OLED) including a thin film transistor (TFT), and an organic light emitting diode.

As such, the flat panel display device may be used in various devices requiring image realization, for example, a portable display device such as a portable telephone, a notebook computer, and a PDA.

The liquid crystal display, which is one of the flat panel display devices, displays an image by using optical characteristics of the liquid crystal, and includes a liquid crystal display panel and a backlight assembly disposed on a rear surface of the liquid crystal display panel to supply light.

In general, a liquid crystal display panel includes a flexible circuit board for transmitting an image signal and a driving chip for generating and outputting a driving signal for driving the liquid crystal display panel on one side thereof, and the flexible circuit board for driving the liquid crystal display panel. A capacitor for boosting the driving voltage is mounted.

In this case, in order to mount the capacitor, the number of insulating films and conductive layers forming the flexible circuit board is increased, and the wiring structure is complicated, thereby reducing the manufacturing cost of the flexible circuit board. In addition, the flexible printed circuit board has a problem of increasing the overall thickness of the display device due to the thickness of the capacitor.

Accordingly, an aspect of the present invention is to provide a display panel and a display device including the same, which can reduce cost and reduce the overall thickness.

Another object of the present invention is to provide a method of manufacturing the display panel.

According to an aspect of the present invention, a display device includes a pair of storage electrodes and a storage capacitor having a first insulating layer interposed therebetween, and a driving device for providing an image signal to the screen display unit. A peripheral portion electrically connected to the circuit portion and the driving circuit portion, the pair of auxiliary capacitor electrodes and an auxiliary capacitor having a second insulating film interposed therebetween, wherein the dielectric constant of the first insulating film is greater than that of the second insulating film. It is characterized by a small one.

The peripheral portion may further include a light blocking film formed corresponding to a region where the auxiliary capacitor is formed, and the screen display may include a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, and a pixel electrode connected to the drain electrode. It may further include.

The pair of auxiliary capacitor electrodes may be an auxiliary capacitor lower electrode formed of the same metal as the gate line and an auxiliary capacitor upper electrode formed of the same metal as the source electrode and drain electrode, or an auxiliary capacitor formed of the same metal as the source electrode and drain electrode. The auxiliary electrode may be an upper electrode formed of the same metal as the lower electrode and the pixel electrode.

In addition, a seal member may be further formed between the auxiliary capacitor and the light blocking film.

A method of manufacturing a display device according to an exemplary embodiment of the present invention includes forming a storage electrode including a storage lower electrode, a first insulating layer, and a storage upper electrode on a lower substrate including a screen display and a peripheral portion, and an auxiliary capacitor on the lower substrate. And forming an auxiliary capacitor including a lower electrode, a second insulating film having a dielectric constant greater than that of the first insulating film, and an auxiliary capacitor upper electrode.

In this case, the second insulating layer may be formed using a shadow mask.

The method of manufacturing the display device may further include forming a light blocking film on a region corresponding to the auxiliary capacitor on an upper substrate facing the lower substrate.

The method may further include forming a seal member on one of the upper substrate and the lower substrate, and bonding the upper substrate and the lower substrate, wherein the seal member may be interposed between the auxiliary capacitor and the light blocking film. have.

Specific details of other embodiments are included in the detailed description and drawings.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms, and only the embodiments are to make the disclosure of the present invention complete, and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

References herein to “top”, “top”, “top” or “bottom”, “bottom” of a layer or film include intervening another layer or film. In addition, as used herein, "overlapping" indicates a shape in which the lower structure and the upper structure have a common center and overlap each other, and includes a case where another structure is interposed between the lower structure and the upper structure, and the upper structure and the lower structure. Any one of the structures is meant to completely overlap the other structure.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

1 is a perspective view illustrating a display panel assembly according to an exemplary embodiment of the present invention.

Referring to FIG. 1, a display panel assembly according to the present invention may include a display panel that receives a first driving voltage to display an image, a driving chip 320 that receives a second driving voltage to output the first driving voltage, and the driving. The chip 320 includes a flexible circuit board 340 for applying the second driving voltage.

In detail, the display panel includes a first substrate 100, a second substrate 200 coupled to face the first substrate 100, and the first substrate 100 and the second substrate 200. It includes a liquid crystal layer (not shown) interposed therebetween.

The first substrate 100 may include a screen display unit including a thin film transistor 120, a storage capacitor 127, and a pixel electrode 130, a driving chip 320 for applying a first driving voltage to the screen display unit, and the driving unit. The driving circuit unit includes a flexible circuit board 340 for applying a second driving voltage to the chip 320, and a peripheral part including an auxiliary capacitor 140 connected to the driving chip 320. A detailed description of the first substrate 100 will be made later with reference to FIG. 2.

The second substrate 200 provided on the first substrate 100 includes a color filter layer expressing a predetermined color by using light passing through the liquid crystal layer. The color filter layer is formed by a thin film process and includes RGB color pixels.

The liquid crystal layer adjusts the transmittance of light provided to the second substrate 200 by arranging liquid crystal molecules according to an electric field formed between the first substrate 100 and the second substrate 200. .

As described above, the driving circuit unit of the first substrate 100 includes the driving chip 320 and the flexible circuit board 340. The driving chip 320 and the flexible circuit board 340 are electrically connected to the first substrate 100 through an anisotropic conductive film.

FIG. 2 is a plan view showing the first substrate 100 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line II ′ of FIG. 2, and is a first embodiment of the present invention.

Referring to FIG. 2, the first substrate 100 may include an image display part DA on which the image is displayed, a peripheral part PA1 surrounding the image display part DA, and a driving circuit part PA2 adjacent to the peripheral part PA1. It is divided into A plurality of pixels are formed in the image display part DA, and the driving chip 320 and the flexible circuit board 340 are provided in the driving circuit part PA2.

The first substrate 100 may include a gate line GL for transmitting a gate signal formed on the transparent substrate 110, a data line DL for transmitting a data signal, the gate line GL, and the data line DL. Thin film transistor (TFT) 120, a storage capacitor 127 connected to the thin film transistor 120, a pixel electrode 130, and an auxiliary capacitor 140 electrically connected to the driving chip. ).

In detail, the gate line GL and the data line DL are insulated from each other and cross each other in the image display unit DA. Each pixel formed in the image display unit DA is defined by the gate line GL and the data line DL. The gate line GL is electrically connected to the gate voltage driver 360 formed on the first substrate to apply a gate voltage to the thin film transistor 120. In addition, the data line is electrically connected to the driving chip 320 to apply a first driving voltage for displaying an image to the thin film transistor 120.

The first driving voltage applied through the thin film transistor 120 is transferred to the pixel electrode 130 to form an electric field between the common electrode formed on the second substrate 200 facing the first substrate 100. electric field). An electric field formed between the pixel electrode 130 and the common electrode changes the arrangement direction of the liquid crystal interposed between the first substrate 100 and the second substrate 200 to display a desired image. Done.

Referring to FIG. 3, the thin film transistor 120 includes a gate electrode 121 provided on the transparent substrate 110, a gate insulating layer 122 disposed on the gate electrode 121, and the gate insulating layer 122. ) The active layer 123 provided on the active layer 123, the ohmic contact layer 124 provided on the active layer 123, and the source and drain electrodes 125 and 126 provided on the ohmic contact layer 124. Include.

In more detail, the gate electrode 121 is branched from the gate line (see FIG. 2) that transmits the gate signal.

The gate insulating layer 122 is provided on the transparent substrate 110 on which the gate electrode 121 is formed. The gate insulating layer 122 has good adhesion to a metal material and is provided on and under the material, for example, the gate electrode 121, the transparent substrate 110, the active layer 123, and the source and drain. It is made of an insulating material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN _X ) that suppresses the formation of an air layer between the electrodes 125 and 126.

The active layer 123 is positioned in a region corresponding to the gate electrode 121 on the top surface of the gate insulating layer 122 and is made of amorphous silicon.

The ohmic contact layer 124 provided on the upper surface of the active layer 123 is made of n + amorphous silicon, and has a channel region CA formed by removing a central portion to partially expose the active layer 123.

The source electrode 125 and the drain electrode 126 are provided on an upper surface of the ohmic contact layer 124.

The source electrode 125 is branched from the data line (see FIG. 2) that transmits the data signal. The source electrode 125 has a first end disposed on an upper surface of the ohmic contact layer 124, and a second end facing the first end is positioned on the gate insulating layer 122.

The drain electrode 126 faces the source electrode 125 with respect to the channel region CA. A first end of the drain electrode 126 is positioned on the top surface of the ohmic contact layer 124, and a second end of the drain electrode 126 opposite to the first end is positioned on the top surface of the gate insulating layer 122.

The second end of the drain electrode 126 may overlap the storage capacitor lower electrode 127a to form a storage capacitor 127.

The first substrate 100 is provided on the TFT 120 to form wirings on the TFT 120 and the transparent substrate 110, for example, the gate line GL and the data line DL. ) Is further provided with a protective film 150 and an organic insulating film 160.

The passivation layer 150 and the organic insulating layer 160 have a contact hole CH partially exposing the drain electrode 126.

The pixel electrode 130 is provided on an upper surface of the organic insulating layer 160 and is electrically connected to the drain electrode 126 through the contact hole CH to apply the first driving voltage to the liquid crystal layer. . The pixel electrode 130 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

Although not shown in the drawings, an upper portion of the pixel electrode 130 may further include a reflective electrode for reflecting light incident from the outside to operate in the reflective mode.

Referring to FIG. 2 again, the auxiliary capacitor unit 140 is provided in the first peripheral area PA1 of the transparent substrate 110.

The auxiliary capacitor unit 140 includes first to sixth main capacitors 141, 142, 143, 144, 145, and 146. However, the number of the auxiliary capacitors 141, 142, 143, 144, 145, 146 may be increased or decreased depending on the strength of the second driving voltage and the capacitance of each of the auxiliary capacitors 141, 142, 143, 144, 145, 146. have.

The first to sixth auxiliary capacitors 141, 142, 143, 144, 145, and 146 are electrically connected to the driving chip 320 to boost and output the second driving voltage applied from the driving chip 320. . The second driving voltage boosted by the first to sixth auxiliary capacitors 141, 142, 143, 144, and 145 is again provided to the driving chip 320.

Therefore, since the flexible circuit unit 340 does not need to further include a capacitor for boosting and outputting the second driving voltage, the number of insulating films, conductive layers, and adhesive layers forming the flexible circuit unit 340 is reduced. You can. Accordingly, the flexible circuit unit 340 can reduce the overall thickness, and can reduce the manufacturing cost.

The first to sixth auxiliary capacitors 141, 142, 143, 144, 145, and 146 according to the embodiment of the present invention have the same structure. Therefore, hereinafter, the structure of the first auxiliary capacitor 141 will be described in detail, and detailed description of the structure of the second to sixth auxiliary capacitors 142, 143, 144, 145, and 146 will be omitted.

As shown in FIG. 3, the structure of the auxiliary capacitor according to an embodiment of the present invention is provided on the first electrode 141a and the upper portion of the first electrode 141a provided on the transparent substrate 110. The second electrode 141b is included.

The first electrode 141a is provided on the same layer as the gate electrode 121 and is formed of the same material as the gate electrode 121.

The second electrode 141b is positioned to correspond to the first electrode 141a. The second electrode 141b is provided on the same layer as the source and drain electrodes 125 and 126, and the material thereof is also the same as that of the source and drain electrodes 125 and 126.

An insulating layer 122 ′ serving as a dielectric substance of the first auxiliary capacitor 141 is interposed between the first electrode 141 a and the second electrode 141 b.

When the second driving voltage is applied from the driving chip 320 to the first auxiliary capacitor 141, charge is accumulated in a space formed between the first electrode 141a and the second electrode 141b. The second driving voltage is boosted, and the second driving voltage boosted by the first auxiliary capacitor 141 is output to the driving chip 320.

The insulating layer 122 ′ is formed on the same layer as the gate insulating layer, but a material having a dielectric constant greater than that of the gate insulating layer is used.

The display panel assembly further includes a gate driving circuit 360 electrically connected to the driving chip 320 to output a gate signal.

The gate driving circuit 360 is electrically connected to the gate line GL to apply the gate signal to the gate line GL. The gate driving circuit 360 is formed in the same process as forming the TFT 120, and in the process of forming the TFT 120, the first peripheral area PA1 of the first substrate 100. Is formed.

The gate driving circuit 360 may be embedded in the driving chip 320 or may be formed as a separate chip and mounted in the first peripheral area PA1. When the gate driving circuit 360 is embedded in the driving chip 320, the driving chip 320 outputs the gate signal and provides the gate signal to the gate line GL.

Hereinafter, a process of forming the TFT 120 and the auxiliary capacitor unit 140 according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4A to 4H are cross-sectional views illustrating a process of forming the first substrate illustrated in FIG. 3. In this embodiment, since the formation process of the first to sixth auxiliary capacitors 141, 142, 143, 144, 145, and 146 is substantially the same, the first auxiliary capacitor 141 is illustrated in FIGS. 4A to 4H. It will be described in detail the formation process of.

First, referring to FIGS. 4A and 4B, a first metal layer 171 is formed on the transparent substrate 110. The first metal layer 171 is made of an aluminum alloy such as aluminum (Al) or aluminum-neodymium (AlNd), a conductive metal material such as chromium (Cr), molybdenum (Mo), and the like, and is deposited by a sputtering method. do.

The first metal layer 171 is patterned to form the gate electrode 121 and the storage capacitor lower electrode 127a in the display area DA, and the first auxiliary capacitor in the first peripheral area PA1. The first electrode 141a of 141 is formed.

Referring to FIG. 4C, after the gate insulating layer 122 is formed on the transparent substrate 110, the gate insulating layer 122 is patterned so that only the gate insulating layer 122 remains on the gate electrode 121 and the storage capacitor lower electrode 127a. .

Next, as illustrated in FIG. 4D, an insulating layer 122 ′ having a dielectric constant greater than that of the gate insulating layer is formed on the first electrode 141a of the first peripheral area PA1.

Referring to FIG. 4E, an amorphous silicon film doped with an amorphous silicon film, phosphorous, or the like is deposited on the gate insulating film 122 and the insulating film 122 ′. The amorphous silicon film (not shown) and the amorphous silicon film doped with phosphorus and the like are deposited by the PECVD method. The amorphous silicon film and the amorphous silicon film doped with phosphorus and the like are patterned to form the active layer 123 and the ohmic contact layer 124 on the gate electrode 121.

4F and 4G, a second metal layer is formed on the gate insulating layer 122 and the insulating layer 122 ′ of the first peripheral region PA1 on which the active layer 123 and the ohmic contact layer 124 are formed. 172 is deposited by a sputtering method. The second metal layer 172 is made of an aluminum alloy such as aluminum (Al) or aluminum neodymium (AlNd), a conductive metal material such as chromium (Cr), molybdenum (Mo), or the like.

The second metal layer 172 is patterned to form the source and drain electrodes 125 and 126 in the display area DA, and the second electrode 141b in an area corresponding to the first electrode 141a. To form. Accordingly, the first auxiliary capacitor 141 is formed in the first peripheral area PA1.

Referring to FIG. 4H, the passivation layer 150 and the organic insulating layer 160 are sequentially deposited on the transparent substrate 110 on which the TFT 120 and the first auxiliary capacitor 141 are formed. The protective layer 150 and the organic insulating layer 160 are partially removed in the display area DA to form the contact hole CH partially exposing the drain electrode 126.

As shown in FIG. 3, the pixel electrode 130 electrically connected to the TFT 120 is formed on the organic insulating layer 160 provided in the display area DA to form the first substrate. Complete 100).

FIG. 5 is a cross-sectional view illustrating another exemplary embodiment of the first auxiliary capacitor illustrated in FIG. 2.

Referring to FIG. 5, the first auxiliary capacitor 147 includes a first electrode 147a provided on the transparent substrate 110 and a second electrode 147b provided on the first electrode 147a. And an insulating layer 150 ′ interposed between the first electrode and the second electrode and having a dielectric constant greater than that of the passivation layer 150.

In another embodiment of the present invention, the first electrode 147a is provided on the same layer as the source and drain electrodes 125 and 126 of the TFT 120 provided in the display area DA. Same as the source and drain electrodes 125 and 126.

An insulating layer 150 ′ and an organic insulating layer are formed on the first electrode 147a.

The second electrode 147b corresponding to the first electrode 147a is provided on an upper surface of the organic insulating layer 160. The second electrode 147b is provided on the same layer as the pixel electrode 130 provided in the pixel display area DA, and the material thereof is also the same.

6A through 6F are cross-sectional views illustrating a process of forming the first auxiliary capacitor illustrated in FIG. 5.

First, referring to FIGS. 6A and 6B, the first metal layer 171 is deposited on the transparent substrate 110 by a sputtering method. The first metal layer 173 is made of an aluminum alloy such as aluminum (Al) or aluminum-neodymium (AlNd), a conductive metal material such as chromium (Cr), molybdenum (Mo), or the like.

The first metal layer 171 is patterned to form the gate electrode 121 and the storage capacitor lower electrode 127a in the display area DA.

Referring to FIG. 6C, the gate insulating layer 122, the active layer 123, and the ohmic contact layer 124 are formed on the transparent substrate 110 on which the gate electrode 121 and the storage capacitor lower electrode 127a are formed. ). The process of forming the gate insulating layer 122, the active layer 123, and the ohmic contact layer 124 is the same as that described above with reference to FIGS. 4C and 4D, and thus a detailed description thereof will be omitted.

Thereafter, a second metal layer 174 is deposited on the active layer 123 and the ohmic contact layer 124 by a sputtering method. The second metal layer 174 is made of an aluminum alloy such as aluminum (Al) or aluminum-neodymium (AlNd), a conductive metal material such as chromium (Cr), molybdenum (Mo), or the like.

The second metal layer 174 is patterned to form first and second electrodes 147a in the source and drain electrodes 125 and 126 and the first peripheral area PA1 in the display area DA.

After the active layer 123, the ohmic contact layer 124, and the source / drain electrodes 125 and 126 are formed, the protective layer and the first peripheral area PA1 of the display area DA are formed as shown in FIG. 6D. An insulating layer 150 ′ is formed on the first electrode 147a.

Since the passivation layer 150 and the insulating layer 150 ′ are formed of different materials, they are formed through two etching processes.

Thereafter, an organic insulating layer 160 is formed on the protective layer and the insulating layer, and a contact hole CH is formed in the protective layer 150 and the organic insulating layer 160 so that the drain electrode 126 is exposed to the outside.

5 and 6F, a third metal layer 175 made of a transparent conductive metal material, for example, ITO or IZO, is deposited on the organic insulating layer 160 on which the contact hole CH is formed. The pixel electrode 130 is formed in the display area DA by patterning the third metal layer 175, and the second electrode 147b is formed in an area corresponding to the first electrode 147a. Accordingly, the first auxiliary capacitor 147 is formed in the first peripheral area PA1.

7 is an exploded perspective view illustrating a liquid crystal display according to an exemplary embodiment of the present invention.

Referring to FIG. 7, a liquid crystal display device 600 according to the present invention includes a display panel assembly (LPA) for displaying an image using light, a backlight assembly 400 for providing the light, and the display panel assembly (LPA). ) Includes a top chassis 500 that fixes the backlight assembly 400 to the backlight assembly 400.

Since the display panel assembly LPA has the same components as those of the display panel assembly illustrated in FIG. 1, redundant description thereof will be omitted.

The backlight assembly 400 is provided below the display panel assembly LPA to provide uniform light to the liquid crystal display panel LP.

In detail, the backlight assembly 400 uniformly adjusts luminance of light emitted from the light sources 410 for generating the light, the light guide plate 420 for guiding the light path, and the light emitted from the light guide plate 420. And optical sheets 430 provided to the panel LP, a reflecting plate 440 for reflecting light leaked from the light guide plate 420, a mold frame 450 serving as a container, and a bottom chassis 460. .

The light sources 410 are positioned at one side of the light guide plate 420 and provide the light to the light guide plate 420. The light sources 410 include first to fourth light emitting diodes (LEDs) 411, 412, 413, and 414 for thinness and low power consumption.

In the present exemplary embodiment, the lamp assembly LA includes four LEDs, but the number of LEDs may be reduced or increased according to the size of the liquid crystal display panel LP.

The first to fourth LEDs 411, 412, 413, and 414 may be mounted on the flexible circuit unit 320 provided in the display panel assembly LPA, and the first to fourth LEDs 411, 412, The light source control flexible circuit unit for controlling the 413 and 414 may be mounted on the light source control flexible circuit unit.

The light guide plate 420 changes a path of the light to provide the light provided from the light sources 410 to the display area DA (see FIG. 1) of the liquid crystal display panel LP (not shown). Is formed.

The optical sheets 430 are interposed between the light guide plate 420 and the liquid crystal display panel LP. The optical sheets 430 improve the characteristics of the light provided from the light guide plate 420, for example, brightness increase and brightness uniformity, and provide the light to the liquid crystal display panel LP.

The reflective plate 440 is provided under the light guide plate 420. The reflective plate 440 reflects the light leaked from the light guide plate 420 back to the light guide plate 420 to improve the light utilization efficiency.

The mold frame 450 accommodates the lamps 410, the light guide plate 420, the optical sheets 430, the reflecting plate 440, and the liquid crystal display panel LP, and is made of a synthetic resin material. . The mold frame 450 includes a bottom surface 451 and sidewalls 452 extending from the bottom surface 451.

The liquid crystal display panel according to the exemplary embodiment of the present invention described above includes an auxiliary capacitor unit for boosting and outputting a second driving voltage and a driving chip for generating a first driving voltage as an image signal by receiving the boosted second driving voltage. Include. Accordingly, the flexible circuit unit connected to one end of the liquid crystal display panel does not need to include a capacitor for boosting the second driving voltage, thereby reducing the overall size of the liquid crystal display device.

Although described above with reference to the embodiments, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below. I can understand.

Claims (10)

A screen display unit including a pair of storage electrodes and a storage capacitor having a first insulating layer interposed therebetween; A driving circuit unit providing an image signal to the screen display unit; And A peripheral portion electrically connected to the driving circuit portion and having a pair of auxiliary capacitor electrodes and an auxiliary capacitor having a second insulating film interposed therebetween, And a dielectric constant of the first insulating layer is smaller than that of the second insulating layer. The method of claim 1, And the peripheral portion further includes a light blocking film formed corresponding to a region where the auxiliary capacitor is formed. The method of claim 2, And the screen display unit further comprises a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, and a pixel electrode connected to the drain electrode. The method of claim 3, wherein And the pair of auxiliary capacitor electrodes are an auxiliary capacitor lower electrode formed of the same metal as the gate line, and an auxiliary capacitor upper electrode formed of the same metal as the source electrode and the drain electrode. The method of claim 3, wherein And the pair of auxiliary capacitor electrodes are an auxiliary capacitor lower electrode formed of the same metal as the source electrode and the drain electrode, and an auxiliary capacitor upper electrode formed of the same metal as the pixel electrode. The method of claim 2, And a seal member between the auxiliary capacitor and the light blocking film. Forming a storage electrode including a storage lower electrode, a first insulating layer, and a storage upper electrode on a lower substrate including a screen display and a peripheral portion; And And forming an auxiliary capacitor on the lower substrate, the auxiliary capacitor including an auxiliary capacitor lower electrode, a second insulating layer having a dielectric constant greater than that of the first insulating layer, and an auxiliary capacitor upper electrode. The method of claim 7, wherein The second insulating layer is formed using a shadow mask. The method of claim 7, wherein And forming a light shielding film in a region corresponding to the auxiliary capacitor of the upper substrate. The method of claim 9, Forming a seal member on one of the upper substrate and the lower substrate; And Bonding the upper substrate and the lower substrate to each other; And the seal member is interposed between the auxiliary capacitor and the light blocking film.

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