KR20080048333A - Column spacer and a methode of fabricating of the same - Google Patents

Abstract

A method for manufacturing the spacer of a column shape is provided to enable a gap spacer to be solidly fixed to a protrusion not to generate friction between the gap spacer and the protrusion, thereby preventing an alignment layer from being removed. A method for manufacturing the spacer(208a) of a column shape comprises the following steps of: forming a leading layer on a substrate; positioning a mask comprised of a semi-transmission portion of a shape that the center width of the semi-transmission portion becomes narrower from the top to the bottom flatly and a blocking portion around the semi-transmission portion on the upper part of the leading layer; radiating light to the upper part of the mask to expose the lower leading layer; and developing the exposed leading layer to constitute the column shape and form a groove(G) of a shape that the center width of the groove becomes narrower flatly in the end side of the column.

Description

Column spacer and a methode of fabricating of the same

1 is an exploded perspective view schematically illustrating a configuration of a general liquid crystal display device;

2 is an enlarged plan view of a portion of a conventional array substrate for a transverse electric field type liquid crystal display device;

FIG. 3 is a cross-sectional view of a transverse electric field type liquid crystal display device according to the related art, cut along III-III and IV-IV of FIG.

Figure 4 is a cross-sectional view showing the engagement form of the gap spacer and the corresponding projection according to the present invention,

5 is a view showing the structure of a gap spacer according to the first embodiment of the present invention,

6A and 6B are cross-sectional views illustrating a process of manufacturing a grooved gap spacer in a schematic order;

7 is an enlarged plan view of a part of an array substrate for a transverse electric field type liquid crystal display device according to the present invention;

FIG. 8 is a cross-sectional view of a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention, cut along VV and VI-VI of FIG.

9 is a cross-sectional view schematically showing the configuration of a transverse electric field type liquid crystal display device according to a first example of a third embodiment of the present invention;

10 is a cross-sectional view schematically showing the configuration of a transverse electric field type liquid crystal display device according to a second example of the third embodiment of the present invention;

11A to 11H are cross-sectional views taken along the line VV and VI-VI of FIG. 7, and FIGS. 12A to 12H are cross-sectional views taken along the line VIII-V of FIG. 7.

13A to 13C are cross-sectional views illustrating a manufacturing process of a color filter substrate including a dual spacer according to the present invention in a process sequence.

<Brief description of the main parts of the drawing>

146: lead portion of pixel electrode 202: black matrix

204a, 204b, 204c: color filter 208a: gap spacer

208b: Press spacer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display device, and more particularly, to a column spacer for preventing staining by cell gap holding and pressing, and a configuration of a liquid crystal display device including the same and a manufacturing method thereof.

In general, a liquid crystal display device is a thin display device that displays an image by using optical anisotropy and birefringence characteristics of a liquid crystal filled between two bonded substrates.

Hereinafter, a general configuration of a liquid crystal display device will be described with reference to the drawings.

1 is a perspective view schematically showing a liquid crystal display according to the related art.

As shown in the drawing, the general color liquid crystal display 11 is manufactured in a state in which the color filter substrate B1 and the array substrate B2 are bonded to each other with the liquid crystal layer 14 therebetween.

The color filter substrate B1 may include a transparent first substrate 5 having a plurality of pixel regions P defined therein, and a color filter configured for each pixel region P on one surface of the first substrate 5. 7a, 7b, 7c and a black matrix 6 constructed between the color filters 7a, 7b, 7c.

The array substrate B2 may include a transparent second substrate 22 having a plurality of pixel regions P defined therein, and another side of the pixel region P on the second substrate P and perpendicular to the side. Located at the intersection of the gate wiring 12 and the data wiring 24 and the two wirings 12 and 24 formed at each side, the gate electrode 30, the active layer 32, the source electrode 34, and the drain electrode. And a thin film transistor T composed of 36.

In addition, a pixel electrode 17 is disposed in the pixel region P and in contact with the drain electrode 36.

In the above configuration, the liquid crystal layer 14 is initially arranged between the color filter substrate B1 and the array substrate B2 by an alignment film (not shown) whose surface is rubbed.

Although not shown, a plurality of spacers (not shown) are formed between the color filter substrate B1 and the array substrate B2 to maintain a gap between the two substrates.

In the above-described configuration, when a voltage is applied between the pixel electrode 17 and the common electrode 18, an electric field is generated in the longitudinal direction, and the liquid crystal 14 is driven by the electric field. The image can be expressed by the light transmittance.

However, the driving by the vertical electric field as described above has a problem that it is difficult to implement a wide viewing angle in terms of the viewing angle of the liquid crystal panel.

Therefore, to solve this problem, a method of driving the liquid crystal with a horizontal electric field has been proposed. Driving the liquid crystal in a horizontal electric field has an advantage of realizing a wide viewing angle compared to the conventional vertical electric field mode.

In this case, in order to drive the electric field horizontally, the pixel electrode and the common electrode have to be designed in a new form. The configuration of the transverse electric field type array substrate will be described with reference to the accompanying drawings.

Fig. 2 is an enlarged plan view of a part of a conventional array substrate for a transverse electric field type liquid crystal display device. (The spacer formed on the counter substrate (color filter substrate) is shown.)

As illustrated, the conventional array substrate for a transverse electric field type liquid crystal display device includes a gate wiring 52 extending in one direction on the substrate 50 and first and second common wirings spaced in parallel thereto. 56a, 56b).

At this time, the data line 72 is formed in a direction crossing the gate lines and the common lines 52, 56a, and 56b.

The first and second common lines 56a and 56b and the data line 72 cross each other to define the pixel region P. Referring to FIG.

At the intersection of the gate wiring 52 and the data wiring 72, a gate electrode 54 which is a part of the gate wiring 52, an active layer 60 positioned on the gate electrode 54, and the active The thin film transistor T including the source electrode 62 and the drain electrode 64 spaced apart from the upper portion of the layer 60 is positioned.

Both sides of the pixel region P may be formed of the same material as the first and second common lines 56a and 56b, and may be perpendicular to the two lines 56a and 56b on both sides of the pixel region P. First common electrodes 58 connected to each other are configured, and in the center region of the pixel region P, a rod-shaped transparent second common electrode 82 extending vertically while contacting the second common wiring 56b. This is made up.

In addition, a pixel electrode 80 is formed between the second common electrode 82, and the pixel electrode 80 has a transparent bar shape extending from the lead portion 78 contacting the drain electrode 64. .

At this time, the first common wiring 56a and the lead portion 78 at the upper portion together with the insulating film interposed between the two components, to form the storage capacitor portion (Cst).

As described above, the design pattern of the transverse electric field array substrate is only one example, and the characteristic of the two substrates 50, which is attached to the upper color filter substrate (not shown) bonded to the array substrate 50 described above, is characterized. The gap spacer 98a for maintaining the spaced gap of the (not shown) and the pressing spacer 98b for preventing the pressing is configured.

The reason why the pressing spacer 98b is required is to prevent light leakage defect due to pressing applied to the liquid crystal panel from the outside.

In more detail, the liquid crystal panel generates a light leakage defect when an external force such as pressing is applied from the outside, and the light leakage is caused to slip between the array substrate 50 and the color filter substrate (not shown) due to the external force. This is caused by the warpage of the liquid crystal panel.

That is, the rubbing directions of the array substrate 50 and the color filter substrate (not shown) are not parallel to each other in the bending direction of the liquid crystal panel, and thus, the liquid crystals adjacent to the substrate surface are arranged in parallel in the X direction so that the overall initial state You will have a different arrangement than.

In such a case, the arrangement of the liquid crystals does not maintain an initial black state, and the light passing through the liquid crystal layer rotates while undergoing a retardation different from that of the normal portion, resulting in light leakage.

For the same reason as above, the pressing spacer 98b is necessary in addition to the gap spacer 98a.

Since the gap spacer 98a functions to maintain the spaced gap between the two substrates, the gap spacer 98a must be configured to contact the two substrates, and the pressing spacer 98b has a distance spaced apart from any one of the two substrates. Should be placed.

In such a case, it is advantageous in the process to use the step of the array substrate, rather than to produce the gap spacer and the pressing spacer in a separate process.

On the other hand, the spacers 98a and 98b are advantageously positioned in an area avoided from the pixel area rather than in the pixel area. Therefore, the step difference between the region where the thin film transistor T is located and the region where the gate wiring 52 or the common wiring 56 is located is used, and in particular, the gap spacer 98a is positioned corresponding to the thin film transistor T. In addition, the pressing spacer 98b may be positioned to correspond to the gate wiring or the common wiring 52 and 56.

Hereinafter, the configuration of the gap spacer and the pressing spacer will be described in more detail with reference to the cross-sectional view.

3 is a cross-sectional view of a transverse electric field type liquid crystal display device according to the related art, which is cut along III-III and IV-IV of FIG.

As illustrated, the conventional transverse electric field type liquid crystal display device 10 includes the array substrate 50, the color filters 94a, 94b, 94c, the black matrix 92, the planarization film, and the gap spacer 96 described above. And the color filter substrate 90 including the 98a and the pressing spacer 98b are bonded together with the liquid crystal (not shown) interposed therebetween.

At this time, a step is generated between the region where the thin film transistor T is formed and the region where the wiring 56a is located. Therefore, as described above, the gap spacer 98a may be configured to correspond to the thin film transistor T. The pressing spacer 98b may be configured to correspond to the common wiring or the gate wiring 56a and 52.

However, as shown, the gap spacer 98a is designed to correspond to the gate wiring 52. Instead, the active layer 60 and the source and drain electrodes of the thin film transistor T are used to use the step difference. During the process of forming the 62 and 64, the protrusion 86 in which the semiconductor pattern and the source and drain metal patterns 86a and 86b are stacked is formed on a portion of the gate wiring 52.

However, in the above-described conventional configuration, when an external force is applied to the liquid crystal panel, friction occurs between the protrusions 86 and the gap spacers 98a, and an alignment layer (not shown) disposed above the protrusions 86. Tearing occurs.

Therefore, conventionally, there is a problem in that a bright point defect occurs in the liquid crystal panel under the influence of the foreign matter caused by the tearing of the alignment layer (not shown).

Therefore, the present invention has a first object of preventing the above-described alignment film tearing, and for this purpose it is proposed a new shape of the spacer and a manufacturing method therefor.

Forming a preceding layer in the columnar spacer forming method substrate according to the present invention for achieving the above object; Positioning a mask including a semi-transmissive portion having a central width narrowing upward and downward in a planar upper portion of the preceding layer, and a shield formed around the semi-transmissive portion; Irradiating light onto the mask to expose the lower preceding layer; Developing the exposed preceding layer to form a groove having a columnar shape and having a center width narrowing toward the top and bottom of the column in plan view.

The preceding layer is characterized in that the polymer resin layer having photosensitivity (properties that change chemical properties by light).

A transverse electric field type liquid crystal display device according to a first aspect of the present invention comprises: first and second substrates in which a plurality of pixel regions are defined and spaced apart from each other; A red, green, and blue color filter sequentially formed on the first substrate corresponding to the plurality of pixel areas; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; In the transverse electric field type liquid crystal display device comprising a projection formed in an arbitrary region of the second substrate, wherein the first spacer, the center width is narrowed up and down and includes a groove into which the projection is introduced, The second spacer may be configured to have a height lower than that of the first spacer so as to generate a spaced area from the second substrate.

A transverse electric field type liquid crystal display device according to a second aspect of the present invention includes: first and second substrates in which a plurality of pixel regions are defined and spaced apart from each other; A red, green, and blue color filter sequentially formed in the first substrate corresponding to the plurality of pixel areas, and at least one of which is formed at a low height; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; Gate wiring and data wiring formed on one side and the other side of the pixel region; In the transverse electric field type liquid crystal display device including a projection formed in an arbitrary region of the second substrate, wherein the first spacer has a form in which the center width is narrowed up and down and includes a groove into which the projection is introduced, The second spacer is configured to have the same height as the first spacer, and is configured to be formed above the color filter having the low height so as to generate a spaced apart area from the second substrate.

A transverse electric field type liquid crystal display device according to a third aspect of the present invention comprises: a first and a second substrate on which a plurality of pixel regions are defined; A red, green, and blue color filter sequentially formed on the first substrate corresponding to the plurality of pixel areas; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; Gate wiring and data wiring formed on one side and the other side of the pixel region; A passivation layer formed on an entire surface of the second substrate and including an etching groove formed at an arbitrary position of the pixel region; In a transverse electric field type liquid crystal display device including a protrusion formed at an arbitrary position of the second substrate, the first spacer includes a groove having a narrow central width on the end surface so that the protrusion is drawn in. The second spacer is configured to have the same height as the first spacer, and is configured at a position corresponding to the etch groove, so that the second spacer is separated from the second substrate.

The switching element includes a gate electrode, a gate insulating film, an active layer, an ohmic contact layer, a source electrode and a drain electrode, and the projection is a gate electrode, a gate insulating film, an active layer, an ohmic contact layer, It is characterized by consisting of the same material as the source electrode and the drain electrode.

A color filter substrate manufacturing method according to a feature of the present invention comprises the steps of preparing a substrate;

Defining a plurality of pixel regions on the substrate; Sequentially forming red, green, and blue color filters in the pixel region; Forming a spacer preceding layer on a front surface of the substrate on which the red, green, and blue color filters are formed; Defining a first region and a second region in an arbitrary region corresponding to at least two of the three color filters in the preceding layer, respectively; Arranging a mask configured to have a transflective portion corresponding to the first region, a transflective portion and a blocking portion corresponding to the second region, and a transmissive portion located at the other region, the upper part spaced apart from the spacer preceding layer Wow; Irradiating light to an upper portion of the mask to expose and develop a lower photosensitive layer, the first spacer having a columnar shape in the first area and a groove formed at an end thereof, and a columnar shape in the second area. Forming a second spacer patterned to a lower height than the preceding layer.

The groove is planarly configured inside the end surface of the columnar shape, characterized in that the center width is configured in a shape that narrows toward the top and bottom.

A method of manufacturing a transverse electric field type liquid crystal display device according to an aspect of the present invention includes the steps of preparing a first substrate and a second substrate in which a plurality of pixel regions are defined; Forming a gate line and a common line spaced apart from one side of the pixel area on one surface of the first substrate; Forming a semiconductor layer intersecting the gate wiring, the common wiring, and a gate insulating layer interposed therebetween, the semiconductor layer being positioned on the other side of the pixel region and protruding in both sides in a length direction at a lower portion thereof and a data wiring thereon; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a protrusion on the gate line or the common line with the gate insulating layer interposed therebetween and having a semiconductor layer and a metal pattern stacked thereon; Forming a rod-shaped transparent pixel electrode in contact with the thin film transistor and extending in the pixel region, and a common electrode spaced in parallel with the thin film transistor; Forming a black matrix on one surface of the second substrate corresponding to the circumference of the pixel area; Sequentially forming red, green, and blue color filters in the pixel region; Forming a spacer preceding layer on a front surface of the substrate on which the red, green, and blue color filters are formed; Defining a first region and a second region in an arbitrary region corresponding to at least two of the three color filters in the preceding layer, respectively; Arranging a mask configured to have a transflective portion corresponding to the first region, a transflective portion and a blocking portion corresponding to the second region, and a transmissive portion located at the other region, the upper part spaced apart from the spacer preceding layer Wow; Forming a first spacer having a columnar shape in the first area and having a groove formed at an end thereof, and a second spacer having a columnar shape in the second area and patterned at a lower height than the preceding layer. .

The common wiring may include first common wiring and a second common wiring disposed under and over the pixel region, and common electrodes connecting the first and second common wirings to both sides of the pixel region. It includes more.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

A feature of the first embodiment of the present invention is characterized in that a groove is formed in the gap spacer on the surface in contact with the projection.

Figure 4 is a cross-sectional view showing the engagement form of the gap spacer and the corresponding projection according to the present invention.

As shown, the protrusion G is formed on the array substrate 100, and the gap spacer 208a is formed on the color filter substrate 200.

When the array substrate 100 and the color substrate 200 are bonded to each other, the protrusions G are positioned in the groove H of the gap spacer 208a.

At this time, the protrusion 208g is fixed left and right inside the gap spacer 208a.

Therefore, when an external force is generated in the liquid crystal panel, since the gap spacer 208a is fixed to the protrusion G, friction can be minimized compared to the conventional one, and thus the alignment layer tear due to friction does not occur.

Hereinafter, the form of the projections will be described in detail with reference to the drawings.

5 illustrates a spacer structure according to the present invention.

As shown in the figure, when viewed from above, the groove H formed in the gap spacer 208a is viewed from above (A), having the widest width at the center and the narrower width as it goes up and down (hereinafter, rugby ball) Shape).

The groove (H) described above may have a trapezoidal shape in which the top surface is straight when viewed from the side (B), and may be formed in a bowl shape when viewed from the front (C).

Therefore, when the projection (G in FIG. 4) is fixed to the center of the groove (H), when the external force is generated from the outside, it is not possible to move up and down as well as up and down, and thus, the projection (G in FIG. 4). Friction between the spacer and the spacer 208a can hardly occur.

The spacer of the form described above can be produced by using a halftone exposure technique.

This will be described below with reference to the process drawings.

6A and 6B are cross-sectional views illustrating a process of manufacturing a grooved spacer in a schematic order.

As shown in Fig. 6A, a photosensitive resin is applied thickly on the substrate 200 to form the preceding layer PL. (The positive case will be described as an example).

In this case, the photosensitive resin may use a positive type in which the exposed part is removed by the developer, or may use a negative type in which the exposed part remains. This may be used depending on the process characteristics or process conditions.

A mask M including a transmissive part B1, a blocking part B2, and a half tone part B3 is positioned on a spaced upper portion of the substrate 200 on which the preceding layer (positive characteristic PL) is formed.

In this case, the transflective portion B3 is a translucent film deposited on the mask M to control the amount of light transmitted, so that only a portion of the preceding layer PL may be reacted from the surface.

Therefore, when the process of exposing and developing the lower preceding layer PL by irradiating light from the upper portion of the mask M is performed, the portion corresponding to the transmissive portion B1 of the mask M is completely exposed. The portion corresponding to the blocking portion B2 of the mask M is not exposed, and a portion of the portion corresponding to the semi-transmissive portion B3 of the mask M is exposed.

Next, when the developing process is performed after the exposure process is completed, as shown in FIG. 6B, a columnar spacer 208a having a groove H may be formed.

Ideally, the portion corresponding to the transflective portion B3 of the mask M should be developed in a rectangular shape, but the light intensity is lowered in the portion close to the blocking portion B2 due to the diffraction characteristic of the light. Therefore, as the depth is lowered from the center of the groove (H) toward the periphery, as shown, a bowl-shaped groove (H) is formed.

Preferably, a groove H having a constant depth is formed.

At this time, the planar shape of the groove (H), can be formed in various ways, in order to apply to the present invention is characterized in that the width is narrowed in the width of the center and the width is narrowed up and down. .

As an application example of the spacer of the above-described form, a configuration and a manufacturing method of a transverse electric field type liquid crystal display device including the spacer and the projection will be described through the second embodiment.

Second Embodiment

A second embodiment of the present invention relates to a configuration of a transverse electric field array substrate including a gap spacer manufactured in the form of the first embodiment and a method of manufacturing the same.

FIG. 7 is an enlarged plan view of a part of an array substrate for a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention. FIG. 7 shows a gap spacer and a pressed spacer together.

As illustrated, a plurality of pixels P are defined on the substrate 100, and the first and second common wirings 106a and 106b spaced apart from the gate wiring 102 on one side of the pixel P. And a data line 130 intersecting the gate lines and the common lines 102, 106a, and 106b.

The first and second common lines 106a and 106b and the data line 130 cross each other to define the pixel region P. Referring to FIG.

A portion of the gate wiring 102 is used as the gate electrode 104 on the gate wiring 102, and an active layer 136 is positioned on the gate electrode 104. The thin film transistor T including the source electrode 132 and the drain electrode 134 spaced apart from the upper portion is configured.

The pixel region P is formed on both sides of the pixel region P and is formed of the same material as the first and second common wirings 106a and 106b, and the two wirings 106a and 106b are different from each other. First and second common electrodes 108 positioned on both sides of the pixel region P and vertically connected to each other, and second transparent rod-shaped bars connected to the second common wire 106b and vertically extending to the pixel region P. The common electrode 150 is configured.

In addition, the transparent pixel electrode 148 is disposed between the second transparent common electrode 150 and spaced apart from the second transparent common electrode 150 and extends from the lead portion 146 in contact with the drain electrode 134.

A protrusion G is formed on the gate wiring 102 or the common wiring 106a.

In this case, the first common line 106a and the lead portion 146 in the upper portion have an insulating film interposed between the two components to form the storage capacitor portion Cst.

The transverse electric field array substrate configured as described above is just one example, which is characterized in that the two substrates 100 (not shown) are attached to an upper color filter substrate (not shown) bonded to the array substrate 100. The gap spacer 208a for maintaining the spaced gaps, and the press spacer 208b for preventing the pressing are constituted.

In this case, the gap spacer 208a is configured to correspond to the protrusion G, and a groove (not shown) is formed at a portion corresponding to the protrusion G.

Hereinafter, the above-described configuration will be described in detail with reference to the cross-sectional view.

FIG. 8 is a cross-sectional view of a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention, which is cut along VV and VI-VI of FIG.

As shown, the transverse electric field type liquid crystal display device according to the present invention includes the array substrate B2, the color filters 204a, 204b, 204c, the black matrix 202, the gap spacer 208a, and the pressed spacer. The color filter substrate B1 including 208b is bonded together with a liquid crystal layer (not shown) interposed therebetween.

In this case, the array substrate B2 includes a switching element T for driving the pixel region P in close proximity, and the pixel electrode P and the common electrode 148 of FIG. 7 is 150) spaced apart.

On one side and the other side of the pixel region P, a gate line 102 and a data line 130 for transmitting a signal to the switching element T are configured.

In this case, the protrusion G is formed on the gate wiring 102 in the same process as the process of forming the wiring with the thin film transistor T, and the gap spacer 208a is positioned corresponding to the protrusion G. In addition, the pressing spacer 208b is positioned to correspond to a portion of the pixel area P which is not used as an opening area.

The contact surface of the gap spacer 208b in contact with the projection G is characterized in that the groove (H) is configured, the groove (H) is configured to have the same width as the diameter of the projection (G), The protrusion is characterized in that configured to be fixed to the groove (H).

Therefore, in order to further secure the fixed state of the protrusion G, the inner shape of the groove H is preferably the same as the outer shape of a part of the upper portion of the protrusion G, so that the upper portion of the protrusion G is It is good to configure so that an external shape exactly fits into the said groove | channel H.

In this case, the protrusion G serves to secure the spaced space between the pressed spacer 208b and the array substrate B2. The protrusion G is drawn into the gap spacer 208a. Because of the shape, the space between the pressing spacer 208b and the array substrate B2 tends to be reduced to match the original design.

Therefore, in order to solve this problem, as described above, the height of the pressing spacer 208b is set to the height of the gap spacer 208a by using a half tone exposure technique to form the groove H. In this case, when the two substrates B1 and B2 are bonded to each other, a space between the pressed spacers 208a and the array substrate B1 can be secured.

In addition to the above-described example, a configuration and method for securing a separation space between the pressing spacer and the array substrate will now be described with reference to the third embodiment.

Third Embodiment

A third embodiment of the present invention is characterized in that a groove is formed in an insulating film of an array substrate corresponding to a gap spacer or using a step of a color filter to secure a space between the pressed spacer and the array substrate.

9 is a schematic cross-sectional view of a configuration of a transverse electric field type liquid crystal display device according to a first example of a third embodiment of the present invention.

As shown in the drawing, the color filter substrate B1 and the array substrate B2 are bonded to each other with a liquid crystal layer (not shown) interposed therebetween. The red, green, and blue color filters 204a, 204b, and 204c are manufactured in a form in which a polymer resin having photosensitivity is mixed and coated and patterned.

At this time, since the transmission characteristics are not the same for each of the pigments, in order to make the luminance of the three colors uniform, one method is to control the light transmittance by varying the thickness as shown.

Thus, as shown in the figure, when the pressing spacer 208b is formed at a portion corresponding to the blue color filter 204c patterned at a low height, the gap spacer 208a is protruded in the groove H portion. While (G) abuts and is firmly fixed, the pressing spacer 208b may secure a spaced area from the array substrate B2.

As described above, the step of the array substrate can be used as an exception of using the step of the color filter 204c.

10 is a cross-sectional view schematically showing the configuration of a transverse electric field type liquid crystal display device according to a second example of the third embodiment of the present invention.

As shown in the figure, in the structure in which the color filter substrate B1 and the array substrate B2 are bonded to each other with a liquid crystal layer (not shown) interposed therebetween, the top protective film PAS is formed when the array substrate B2 is fabricated. As the inorganic insulating film and the organic insulating film can be used.

The inorganic insulating layer may be formed by depositing one selected from the group of inorganic insulating materials including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ), and the organic insulating layer may be formed of benzocyclobutene (BCB) and acryl. It may be formed by applying one selected from the group of inorganic insulating materials including a resin.

In this case, an organic insulating layer is generally formed thicker than an inorganic insulating layer, and in this case, the organic insulating layer may be partially etched from the surface to form an etching groove EH.

If the passivation layer PAS is an inorganic insulating layer, a method of securing the etch groove EH by etching to the lower gate insulating layer 110 may be used.

Accordingly, the gap spacer 208a is firmly fixed to the protrusion G by contacting the groove H portion, while the pressing spacer 208b is connected to the array substrate B2 by the etching groove EH. It is possible to secure a spaced area between.

Hereinafter, the manufacturing process of the array substrate for a transverse electric field type liquid crystal display device is demonstrated with reference to a process drawing.

11A to 11H are cross-sectional views taken along the lines VV and VI-VI of FIG. 7, and FIGS. 12A to 12H are cross-sectional views taken along the line VIII-V of FIG. 7.

11A and 12A are cross-sectional views illustrating a first mask process.

As illustrated, a pixel region P and a switching region S are defined in the substrate 100, and a conductive metal is deposited on the substrate 100 in which the pixel region P and the switching region S are defined. The first mask process may be patterned to form a plurality of gate lines 102 extending in one direction and spaced apart from each other in parallel with each other, and a portion of the gate lines 102 or a gate electrode 104 protruding therefrom. At the same time, the common wiring 106a (106b in FIG. 7) and the common electrode 108 spaced apart in parallel with the gate wiring 102 are formed.

Examples of the conductive metal include aluminum (Al), aluminum alloy (AlNd), chromium (Cr), tungsten (W), molybdenum (Mo), titanium (Ti), and the like.

The common wiring 106a (106b of FIG. 7) and the common electrode 108 may be variously patterned. In the present invention, the first and second common wiring 106a may be formed on the upper and lower portions of the pixel region P. 106b of 7 is formed, and the first and second common wires 106a and 106b of FIG. 7 are vertically connected, and the first common electrode 108 is formed on both sides of the pixel region P. FIG. .

The first common wiring 106a is configured to form the storage capacitor Cst, and the second common wiring 106b of FIG. 7 is in contact with the transparent common electrode 150 of FIG. It is a configuration for transmitting a common signal.

11B to 11F and 12B to 12F are cross-sectional views illustrating a second mask process.

11B and 12B, the gate insulating film 110 is formed on the entire surface of the substrate 100 on which the gate wiring 102, the common wiring 106a and 106b of FIG. 7, and the first common electrode 108 are formed. ), A pure amorphous silicon layer 112, an impurity amorphous silicon layer 114, and a conductive metal layer 116 are laminated, and a photoresist is applied on the conductive metal layer 116 to form a photosensitive layer 118. ).

The gate insulating layer 110 may be formed by depositing one or more selected from inorganic insulating material groups, such as silicon oxide (SiO ₂ ) and silicon nitride (SiN _X ), and the conductive metal layer may be formed by the aforementioned conductive metal group. The amorphous silicon layer 112 and the impurity amorphous silicon layer 114 may be formed by depositing pure amorphous silicon (a-Si: H) and impurity amorphous silicon (n + a-Si: H), respectively. Can be formed.

Next, a mask M including the transmissive part B1, the blocking part B2, and the transflective part B3 is positioned on the spaced upper portion of the photosensitive layer 118.

The mask M region corresponding to the transflective portion B3 of the mask M may be a translucent film or may be formed by forming a slit pattern.

In this case, the portion corresponding to the switching region S has the transflective portion B3 and the cutoff portions B1 positioned on both sides thereof, and has a predetermined width on one side of each pixel region P. The blocking unit B1 is positioned, and the blocking unit B1 is positioned corresponding to the protrusion region D randomly defined in the gate wiring 102 or the common wiring 106a.

Next, the process of exposing the lower photosensitive layer 118 by irradiating light to the upper portion of the mask (M).

11C and 12C, the first photosensitive pattern 120a having a stepped shape corresponding to the switching region S, and the first photosensitive pattern 120a extending from the first photosensitive pattern 120a to the pixel region P, respectively. The second photosensitive pattern 120b and the third photosensitive pattern 120c formed corresponding to the protrusion region D are formed.

The conductive metal layer 116 is exposed to the periphery of the first to third photosensitive patterns 120a, 120b, and 120c.

 An etching process of removing the conductive metal layer 116 exposed to the periphery of the first to third photosensitive patterns 120a, 120b, and 120c, the impurity amorphous silicon layer 114, and the pure amorphous silicon layer 112 below Proceed.

When the etching process is completed, as shown in FIGS. 11D and 12D, the gate insulating layer 110 is exposed to the periphery of the first to third photosensitive patterns 120a, 120b, and 120c.

Through the above-described etching process, the first semiconductor pattern 122a in which the first metal pattern 124 and the impurity amorphous silicon layer and the pure amorphous silicon layer patterned thereunder are stacked below the first photosensitive pattern 120a. A data line 130 extending from the first metal pattern 124 to one side of the pixel region P and a lower second semiconductor pattern 122b below the second photosensitive pattern 120b. Is formed.

At the same time, a protrusion G in which the third semiconductor pattern 122c and the second metal pattern 126 are stacked is formed in the protrusion region D below the third photosensitive pattern 120c.

Next, an ashing process of etching a portion of the first to third photosensitive patterns 120a, 120b, and 120c from the surface is performed. The ashing process is to expose a portion of the lower first metal pattern 124 by removing a portion having a low height corresponding to the gate electrode 104 of the stepped first photosensitive pattern 102a.

As shown in FIGS. 11E and 12E, when the ashing process is performed, the first photosensitive pattern 120a of the portion corresponding to the gate electrode 104 is completely removed to remove the first metal pattern 124 from the lower portion. The central area is exposed.

In addition, although not shown in detail in the drawing, since the photosensitive patterns 120a, 120b, and 120c are inclined from the center to the periphery during the curing process, the other regions of the first photosensitive pattern 12a and The second to third photosensitive patterns 120a, 120b, and 120c are removed to the surface by the ashing process, and the first and second metal patterns 124 and 126 and the data lines of the portions corresponding to the peripheral parts having a low thickness are removed. 130 is exposed.

 A process of removing the exposed first metal pattern 124 is performed, and the lower pure amorphous silicon layer 112 is exposed by removing the impurity amorphous silicon layer 114 in the lower first semiconductor pattern 122a. Proceed with the process.

In this case, as illustrated in FIGS. 11F and 12F, the source electrode 132 and the drain electrode 134 may be formed to correspond to the switching region S, and the lower portions of the two electrodes 132 and 134 may be formed. An ohmic contact layer 138 having an ohmic contact function is formed on the impurity amorphous silicon layer 114 patterned at the bottom thereof, and the pure amorphous silicon layer 112 below is formed between the two electrodes 132 and 134. It may be formed of an active layer 136 serving as a role.

Next, a process of removing the first to third photosensitive patterns 120a, 120b, and 120c is performed.

11G and 12G are cross-sectional views illustrating a third mask process, and as illustrated, nitride is formed on the entire surface of the substrate 100 on which the source and drain electrodes 132 and 134, the data wiring 130, and the protrusion G are formed. A drain contact hole 142 exposing a portion of the drain electrode 134 by forming and patterning a protective layer 140 by depositing one selected from an inorganic insulating group including silicon (SiNx) and silicon oxide (SiO ₂ ). ) And a common wiring contact hole (not shown) exposing a portion of the second common wiring 106b in FIG. 7.

In this case, as shown in FIG. 10, an etching groove (EH of FIG. 10) may be formed corresponding to one side of the pixel region P adjacent to the gate wiring 102 (FIG. 10).

As such, when the etching groove (EH of FIG. 10) is formed, a separation space between the pressing spacer (208b of EG 10) and the array substrate (B2 of FIG. 10) may be secured.

11H and 12H are cross-sectional views illustrating a fourth mask process. As shown in FIG. 11H and FIG. 12H, indium tin oxide (ITO) and indium zinc oxide (ITO) may be formed on the entire surface of the substrate 100 on which the passivation layer 140 is formed. A lead wire 146 which is formed by depositing and patterning a selected one of a group of transparent conductive metals including an IZO and extending in a shape overlapping the first common line 106a while being in contact with the drain electrode 134; A bar-shaped pixel electrode 148 extending from the lead-out wiring 146 to the pixel area is formed.

At the same time, a second common electrode 150 having a bar shape extending to the pixel area P is formed while contacting the second common wiring 106b of FIG. 7 through the common wiring contact hole (not shown).

In this case, a configuration close to the first common electrode 108 formed in the first mask process among the second common electrodes 150 may be partially overlapped with the first common electrode 108.

In this case, the first and second common electrodes 108 and 150 at both sides of the pixel region P may block the influence of the signal flowing through the data line 130 on the pixel.

As described above, the array substrate for the transverse electric field type liquid crystal display device according to the present invention can be manufactured through the four mask process described above.

Hereinafter, the manufacturing process of the color filter substrate bonded to the array substrate fabricated as described above will be described.

13A to 13C are cross-sectional views illustrating a manufacturing process of a color filter substrate including a dual spacer according to the present invention in a process sequence.

As shown in FIG. 13A, chromium (Cr) or chromium oxide (CrO ₂ ) is sequentially deposited and patterned on a substrate 200 in which a plurality of pixel regions are defined, and a black matrix is formed around the pixel region P. (black matrix, 202).

Next, red, green, and blue color filters 204a, 204b (not shown) are formed corresponding to the pixel area P. FIG.

The color filters 204a, 204b (not shown) are usually coated with photosensitive color resins of red, green, and blue, and patterned for each pixel area P to form red, green, and blue color filters (204a, 204b, not shown). When formed so as to correspond sequentially.

As shown in FIG. 13B, a spacer having a photosensitive characteristic is thickly coated on the entire surface of the substrate 200 on which the color filters 204a and 204b are formed to form the spacer preceding layer PL.

Next, after defining the gap area GA and the pressed area PA in the preceding layer PL, the pressed area PA is made to correspond to the semi-transmissive part B3, and the gap area GA is defined. The blocking portion (B2) and the transflective portion (B3) to the inside of the blocking portion (B2) is located on both sides.

At this time, when the transflective portion B3 of the gap region GA is viewed in a plan view, the transflective portion B3 is configured to have a widest width at the center and a narrower vertically.

Next, the process of irradiating light from the upper part of the said mask M, exposing and developing lower preceding layer PL is performed.

In this case, columnar gap spacers 208a and depression spacers 208b are formed in the gap region GA and the depression region PA.

At this time, a groove H having a narrow shape is formed at a position corresponding to the semi-transmissive portion B3 of the mask M before the end of the gap spacer 208a, and is narrowed by going up and down. 208b is actually formed at a lower height than the gap spacer 208a.

In this case, the cross section inside the groove H is not constant and is formed deeper toward the center due to the diffraction of light in a portion close to the blocking portion B2, and the diffracted light tends to be weak in intensity. Since it is visible, the degree of development is lower from the center of the gap spacer 208a to the outside.

Therefore, preferably, the depth of the groove H is constant by adjusting the degree of diffraction of the light.

Since the groove H has a shape in which the width of the groove H decreases as it goes up and down in the plane, the external force from the outside is fixed while the protrusion of the array substrate 200 is fixed at the center of the groove H. Even if this occurs, it is not possible to move up and down as well as left and right.

Therefore, friction between the projections (G of FIG. 8) and the gap spacer 208a may not occur or may be minimized, so that the alignment layer tearing due to friction does not occur.

In addition, since the pressed spacer 208b may be formed at a lower height than the gap spacer 208a, when the color filter substrate and the array substrate are bonded to each other, a space between the pressed spacer 208b and the array substrate may be secured.

Through the above-described process, it is possible to manufacture a color filter substrate according to the present invention.

As described above, the transverse electric field type liquid crystal display device according to the present invention can be manufactured, and the features of the present invention according to the first to third embodiments described above are numerous in addition to the transverse electric field type liquid crystal display device described above. It can be applied to a liquid crystal display device of the type.

Therefore, when the grooved columnar spacer as proposed in the present invention is used, the friction with the projections does not occur, so that the alignment film applied to the surface of the projections does not occur and the image quality is not deteriorated.

Claims (12)

Forming a preceding layer on the substrate; Positioning a mask including a semi-transmissive portion having a central width narrowing upward and downward in a planar upper portion of the preceding layer, and a shield formed around the semi-transmissive portion; Irradiating light onto the mask to expose the lower preceding layer; Developing the exposed preceding layer to form a groove having a pillar shape and having a central width narrowing upward and downward in a planar manner on an end surface of the pillar; Columnar spacer forming method comprising a. According to claim 1 The preceding layer is a columnar spacer forming method of a polymer resin layer having photosensitivity (chemical properties change by light). First and second substrates on which a plurality of pixel regions are defined and spaced apart from each other; A red, green, and blue color filter sequentially formed on the first substrate corresponding to the plurality of pixel areas; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; In a transverse electric field type liquid crystal display device comprising projections formed in an arbitrary region of the second substrate,  The first spacer has a form in which the center width is narrowed up and down and includes a groove into which the protrusion is inserted, and the second spacer is configured to have a lower height than the first spacer so that a space between the second substrate and the second substrate is generated. Transverse electric field type liquid crystal display device characterized in that formed. First and second substrates on which a plurality of pixel regions are defined and spaced apart from each other; A red, green, and blue color filter sequentially formed in the first substrate corresponding to the plurality of pixel areas, and at least one of which is formed at a low height; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; Gate wiring and data wiring formed on one side and the other side of the pixel region; In a transverse electric field type liquid crystal display device comprising projections formed in an arbitrary region of the second substrate, The first spacer has a form in which the center width is narrowed up and down and includes a groove into which the protrusion is inserted, and the second spacer has the same height as the first spacer, but has a low height. It is configured to be formed on the upper substrate and spaced apart from the second substrate, characterized in that Transverse electric field liquid crystal display device. First and second substrates defining a plurality of pixel regions; A red, green, and blue color filter sequentially formed on the first substrate corresponding to the plurality of pixel areas; Columnar first and second spacers formed on the color filter; A switching element configured for each pixel region on the second substrate; A pixel electrode connected to the switching element, and a common electrode spaced apart from the pixel electrode; Gate wiring and data wiring formed on one side and the other side of the pixel region; A passivation layer formed on an entire surface of the second substrate and including an etching groove formed at an arbitrary position of the pixel region; In a transverse electric field type liquid crystal display device comprising a projection formed at an arbitrary position of the second substrate, The first spacer may include a groove having a center width narrowing toward the end surface so that the protrusion is drawn in, and the second spacer has the same height as the first spacer, but corresponds to the etching groove. And configured to generate a spaced apart region from the second substrate. The method according to any one of claims 3 to 5, And the switching element comprises a gate electrode, a gate insulating film, an active layer, an ohmic contact layer, a source electrode and a drain electrode. The method of claim 6, And wherein the projection is made of the same material as the gate electrode, the gate insulating film, the active layer, the ohmic contact layer, the source electrode and the drain electrode. Preparing a substrate; Defining a plurality of pixel regions on the substrate; Sequentially forming red, green, and blue color filters in the pixel region; Forming a spacer preceding layer on a front surface of the substrate on which the red, green, and blue color filters are formed; Defining a first region and a second region in an arbitrary region corresponding to at least two of the three color filters in the preceding layer, respectively; Arranging a mask configured to have a transflective portion corresponding to the first region, a transflective portion and a blocking portion corresponding to the second region, and a transmissive portion located at the other region, the upper part spaced apart from the spacer preceding layer Wow; Irradiating light to an upper portion of the mask to expose and develop a lower photosensitive layer, the first spacer having a columnar shape in the first area and a groove formed at an end thereof, and a columnar shape in the second area. Forming a second spacer patterned to a lower height than the preceding layer Color filter substrate manufacturing method comprising a. The method of claim 8, The groove is planarly formed inside the end surface of the columnar shape, the center width of the color filter substrate manufacturing method characterized in that it is configured in a shape that narrows toward the top and bottom. Preparing a first substrate and a second substrate on which a plurality of pixel regions are defined; Forming gate wirings and common wirings spaced apart from one side of the pixel region on one surface of the first substrate; Forming a semiconductor layer intersecting the gate wiring, the common wiring, and a gate insulating layer interposed therebetween, the semiconductor layer being positioned on the other side of the pixel region and protruding in both sides in a length direction at a lower portion thereof and a data wiring thereon; Forming a thin film transistor at an intersection point of the gate line and the data line; Forming a protrusion on the gate line or the common line with the gate insulating layer interposed therebetween and having a semiconductor layer and a metal pattern stacked thereon; Forming a rod-shaped transparent pixel electrode in contact with the thin film transistor and extending in the pixel region, and a common electrode spaced in parallel with the thin film transistor; Forming a black matrix on one surface of the second substrate corresponding to the circumference of the pixel area; Sequentially forming red, green, and blue color filters in the pixel region; Forming a spacer preceding layer on a front surface of the substrate on which the red, green, and blue color filters are formed; Defining a first region and a second region in an arbitrary region corresponding to at least two of the three color filters in the preceding layer, respectively; Arranging a mask configured to have a transflective portion corresponding to the first region, a transflective portion and a blocking portion corresponding to the second region, and a transmissive portion located at the other region, the upper part spaced apart from the spacer preceding layer Wow; Forming a first spacer having a columnar shape in the first area and having a groove at an end thereof, and a second spacer having a columnar shape in the second area and patterned to a lower height than the preceding layer; Transverse electric field type liquid crystal display device manufacturing method comprising a. The method of claim 10, And the common wiring comprises first common wiring and second common wiring disposed under and above the pixel area. The method of claim 10, And a common electrode connecting the first and second common wires to both sides of the pixel region.

Images