KR20070120879A - Organic light emitting device and method of manufacturing thereof - Google Patents

Abstract

An organic light emitting display device and a manufacturing method thereof are provided to reduce a manufacturing process of the display device by changing a configuration of an electron transfer layer from a double-layer to a single-layer structure. An organic light emitting display device includes a first electrode(31), a second electrode(32), an organic light emitting layer(35), and an electron transfer layer(33). The first electrode provides holes. The second electrode is arranged to face the first electrode and provides electrons. The organic light emitting layer is applied between the first and second electrodes. The electron transfer layer is arranged between the second electrode and the organic light emitting layer. The electron transfer layer includes an electron transfer member(33c), which injects and transfers electrons to the organic light emitting layer, while blocking holes from permeating from the first electrode to the electron transfer layer.

Description

ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF}

1 is a cross-sectional view showing an organic light generating apparatus according to a first embodiment of the present invention.

2 is a view for explaining an electron transport layer forming process in the organic light generating device of the present invention.

FIG. 3 is a cross-sectional view illustrating an electron transport member constituting the electron transport layer of FIG. 1.

4 is a cross-sectional view illustrating holes and electrons provided in an organic light emitting layer in the organic light generating device of FIG. 1.

5 is a cross-sectional view illustrating an organic light generating apparatus according to a second exemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating an electron transport member constituting the electron transport layer of FIG. 5.

FIG. 7 is a cross-sectional view illustrating holes and electrons provided in the organic light emitting layer in the organic light generating device of FIG. 5.

8A is a flowchart showing a manufacturing method of an organic light generating apparatus according to a third embodiment of the present invention.

8B is a flowchart illustrating a method of manufacturing an organic light generating device according to a fourth embodiment of the present invention.

9 is a plan view illustrating an organic light generating apparatus according to a fifth exemplary embodiment of the present invention.

10A and 10B are enlarged views of portion A of FIG. 9.

11 and 12 are cross-sectional views illustrating a method of manufacturing an organic light generating apparatus according to a fifth embodiment of the present invention.

The present invention relates to an organic light generating device and a manufacturing method thereof. More specifically, the present invention relates to an organic light generating device and a method for manufacturing the same, which can reduce thickness, improve image sharpness, and simplify a manufacturing process.

Recently, display apparatuses for displaying data in the form of electrical signals processed by the information processing apparatus and the information processing apparatus as images have been developed.

Examples of the representative display device include a liquid crystal display device, an organic light generating device, a plasma display panel, and the like. The liquid crystal display displays an image using liquid crystal, the organic light generating device displays an image using an organic light emitting material, and the plasma display panel displays an image using plasma. The display devices described above are mainly employed in information processing devices such as computers, laptops, watches, mobile phones, MP3 players, television receiver sets and the like.

The organic light generating device displaying an image using the organic light emitting material has an advantage of greatly reducing volume and weight since it does not require a light supply means such as a backlight.

The organic light generating apparatus includes a pair of conductive electrodes and an organic light emitting layer interposed between the conductive electrodes. The organic light emitting layer includes an organic light emitting material. When a forward current is applied to the conductive electrodes of the organic light generating device, light is generated from the organic light emitting layer.

However, the conventional organic light generating device has a problem in that the manufacturing process is complicated and the manufacturing time is greatly increased since the electron injection layer and the electron transporting layer are respectively formed on the electrodes, and the overall thickness of the organic light generating device is increased.

In addition, when the thickness of the electron injection layer and the electron transport layer of the conventional organic light generating device is non-uniform, undesired light may be generated, so that the image quality, for example, the sharpness of the image is greatly reduced.

Accordingly, one object of the present invention is to provide an organic light generating device which not only shortens the manufacturing time due to the simplification of the manufacturing process and the manufacturing process but also improves the display quality of the image, for example, the sharpness of the image.

In order to achieve the above object, the organic light emitting device according to the present invention,

A first electrode providing a hole;

A second electrode facing the first electrode and providing electrons;

An organic light emitting layer interposed between the first and second electrodes; And

An electron transport layer disposed between the second electrode and the organic light emitting layer,

The electron transport layer may be a single layer including an electron transport member for injecting and transferring electrons to the organic light emitting layer while preventing holes from flowing from the first electrode to the electron transport layer.

Organic electroluminescent device manufacturing method according to another embodiment of the present invention,

Forming a second electrode on the substrate;

Sequentially forming a hole injection layer and a hole transport layer on the second electrode;

Forming an organic light emitting layer on the hole transport layer;

Forming an electron transport layer including a plurality of electron transport members and an insulating layer on the organic light emitting layer; And

Forming a first electrode on the electron transport layer.

Organic electroluminescent device manufacturing method according to another embodiment of the present invention,

Forming a first electrode on the substrate;

Forming an electron transport layer including a plurality of electron transport members and an insulating layer on the first electrode;

Forming an organic light emitting layer on the electron transport layer;

Sequentially forming a hole transport layer and a hole injection layer on the organic light emitting layer; And

And forming a second electrode on the hole injection layer.

Organic electroluminescent device according to another embodiment of the present invention,

A first substrate including a display device;

A first electrode disposed to provide a hole in the first substrate;

A second electrode disposed to provide electrons facing the first electrode;

An organic light emitting layer disposed between the first and second electrodes; And

An electron transport layer disposed between the second electrode and the organic light emitting layer,

The electron transport layer is a single layer including an electron transport member for injecting and transporting electrons to the organic light emitting layer while preventing holes from entering the electron transport layer from the first electrode,

A second substrate having a drive device; And

And a sealing member for joining the first and second substrates.

Hereinafter, an organic light generating apparatus and a method of manufacturing the same according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments, which are common in the art. Those skilled in the art will be able to implement the invention in various other forms without departing from the spirit of the invention. In the accompanying drawings, the dimensions of the first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer, and other structures are shown in an enlarged scale than actual for clarity of the present invention. In the present invention, when the first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer, and other structures are referred to as being formed "on", "upper" or "lower" The first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer and other structures directly include the first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer and other It may be formed on or below the structures, or other first electrodes, electron transport layers, second electrodes, hole injection layers, hole transport layers, organic light emitting layers, and other structures may be further formed on the substrate. In addition, the first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer and other structures may be, for example, "first", "second", "third" and / or " 4 "and the like, it is not intended to limit these members but to distinguish between the first electrode, the electron transport layer, the second electrode, the hole injection layer, the hole transport layer, the organic light emitting layer and other structures. Thus, for example, substrates such as "first," "second," "third," and / or "fourth," may include a first electrode, an electron transport layer, a second electrode, a hole injection layer, a hole transport layer, The organic light emitting layer and other structures may be used selectively or interchangeably, respectively.

1 is a cross-sectional view showing an organic light generating apparatus according to a first embodiment of the present invention, FIG. 2 is a view for explaining an electron transport layer forming process in the organic light generating apparatus of the present invention, FIG. 4 is a cross-sectional view illustrating an electron transport member constituting an electron transport layer of FIG.

Referring to FIG. 1, the organic light generating apparatus 100 includes a first electrode 31, a second electrode 32, an organic emission layer 35, and an electron transport layer 33. In addition, the organic light generating apparatus 100 may further include a substrate 20, a hole injection layer 36, and a hole transport layer 37.

In this embodiment, the first electrode 31 is disposed on the substrate 20, and the hole injection layer 36 and the hole transport layer 37 are continuously disposed on the first electrode 31. The organic emission layer 35 is disposed on the hole transport layer 37, and the electron transport layer 33 is disposed on the organic emission layer 35. In the present embodiment, the substrate 20 may be, for example, a transparent glass substrate.

The first electrode 31 disposed on the transparent substrate 20 may include a transparent and conductive material. For example, examples of the material that can be used as the first electrode 31 include indium tin oxide (ITO), indium zinc oxide (IZO), and amorphous indium tin oxide (aO). -ITO) etc. can be mentioned.

The hole injection layer 36 disposed on the first electrode 31 may include, for example, Cu-Pthalocyanine (CuPc).

In the present embodiment, although CuPc is cited as an example of the material forming the hole injection layer 36, various hole transport compounds having a function of transferring holes injected from the first electrode 31 to the organic light emitting layer 35 may be used. Can be. For example, examples of the material forming the hole injection layer 36 include a hole injectable polypyrine compound, a phthalocyanine compound, a hole transporting aromatic tertiary amine, a trisphenothiazinyltriphenylamine derivative, or a trisphenoxadinytriphenyl Amine derivatives, polythiophene, the compound containing a carbazole group, etc. are mentioned.

Or as an example of a material forming the hole injection layer 36, a triazole compound, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a pyrazorone derivative, a phenylenediamine derivative, an arylamine derivative, an oxa Sol derivatives, styrylanthracene derivatives, fluorene derivatives, hydrazone derivatives, stilbene derivatives, porphyrin compounds, aromatic tertiary amine compounds, styrylamine compounds, butadiene compounds, polystyrene derivatives, hydrazone derivatives, triphenylmethane derivatives, tetra Phenylbenzidine derivatives, polyaniline polymer materials, polythiophene polymer materials, polypyrrole polymer materials and the like can be used.

Referring back to FIG. 1, a hole transport layer 37 is disposed on the hole injection layer 36. The hole transport layer 37 efficiently provides holes provided from the first electrode 31 and the hole injection layer 36 to the organic light emitting layer 35.

The organic emission layer 35 may be disposed on the hole injection layer 36. Alternatively, the organic emission layer 35 may be directly disposed on the first electrode 31. The organic light emitting layer 35 may use various polymer materials suitable for generating red, green, and blue light.

The second electrode 32 provides electrons toward the organic light emitting layer 35. Red light, green light, and blue light may be generated in the organic light emitting layer 35 according to the polymer material forming the organic light emitting layer 35 by electrons provided from the second electrode 32 and holes provided from the first electrode 31.

In the present embodiment, it is preferable to use a material having a low work function for the second electrode 32. Examples of the material used as the second electrode 32 include aluminum or an aluminum alloy.

On the other hand, in order to efficiently transfer electrons provided from the second electrode 32 to the organic light emitting layer 35, an electron transport layer 33 is formed between the second electrode 32 and the organic light emitting layer 35.

Referring to FIG. 3, the electron transport layer 33 according to the present embodiment is formed of a single layer, and the single layer electron transport layer 33 serves as an electron injection layer and an electron transport layer. That is, the electron transport layer 33 according to the present embodiment accelerates and transfers electrons from the second electrode 32 to the organic emission layer 35.

In order to inject and transport electrons from the second electrode 32 to the organic light emitting layer 35, the electron transport layer 33 includes a plurality of electron transport members 33c.

That is, in order to form an electron transport layer 33 for injecting and transporting electrons into the organic light emitting layer 35 as a single layer, the electron transport layer 33 includes an electron transport member 33c. .

The electron transfer member 33c includes a single crystal silicon particle 33b and an insulating film 33a for coating the single crystal silicon particle 33b.

In the present embodiment, the single crystal silicon particles 33b may have a diameter of about 50 to about 100 nm. In addition, the insulating film 33a coating the single crystal silicon particle 33b may be, for example, a silicon nitride film (SiN _X ), a silicon oxide film (SiO _X ), or an organic insulating material.

The electron transfer member 33c including the insulating film 33a coated with the single crystal silicon particle 33b mixes the single crystal silicon particle 33b with a volatile material, and then the second electrode 32 and the organic light emitting layer 35. It is formed to have a uniform thickness in between.

Specifically, the method of forming the bottom transfer layer 33 will be described with reference to FIG. 2.

First, the cyclopentasilane (cyclopentasilane: CPS, Si _x H _2X ) is irradiated with ultraviolet (UV) having a wavelength of 395 ~ 415nm to cause a photopolymerization reaction. Then, the resultant photopolymerization reaction is mixed with the volatile solution and coated on the first electrode 31 or the organic light emitting layer 35. More specifically, the mixed result may be formed on the first electrode 31 or the organic light emitting layer 35 by an inkjet method. Subsequently, the photopolymerization material undergoes a heat treatment process at 500 ° C. to 600 ° C. to form single crystal silicon particles 33 b. Not only inkjet method but also coating and printing process can be applied.

Then, the insulating layer 33a may be formed on the single crystal silicon particles 33b to form the electron transfer member 33c of the electron transfer layer 333. The insulating layer 33a is a silicon nitride layer, a silicon oxide layer, or an organic insulating material layer.

In addition, a method of forming the insulating layer 33a may be a deposition, spin coating, or printing method.

Second, another method of forming the electron transport layer 33 is to mix the single crystal silicon particles 33b to the nanopowder in a solvent or a volatile solution, and then the mixed product is the first electrode 31 or the organic light emitting layer 35 The silicon nitride layer may be formed on the substrate, heat treated to form single crystal silicon particles 33b, and then the silicon nitride layer may be formed by a deposition process, or the silicon oxide layer may be formed by spin coating or printing.

In another method of forming the electron transport layer 33, nano-sized single crystal silicon particles are mixed with a volatile material, and then a silicon particle solution is formed on the first electrode 31 or the organic light emitting layer 35. More specifically, the silicon particle solution is formed on the first electrode 31 or the organic light emitting layer 35 by an inkjet, spin coating or printing method. Then, the heat treatment process is performed to form the single crystal silicon particles 33b.

The insulating layer 33a may be formed on the single crystal silicon particles 33b to form the electron transfer member 33c of the electron transfer layer 333. The insulating layer 33a is a silicon nitride layer, a silicon oxide layer, or an organic insulating material layer.

In addition, a method of forming the insulating layer 33a may be a deposition, spin coating, or printing method.

In this embodiment, the thickness of the electron transport layer 33 including the electron transport members 33c is very important. In this embodiment, the thickness of the electron transport layer 33 measured from the surface of the organic light emitting layer 35 has a thickness of about 300 kPa to about 600 kPa.

In the present embodiment, when the thickness of the electron transport layer 33 is about 300 mm or less, the number of electrons transferred to the organic light emitting layer 35 through the electron transport layer 33 may be significantly reduced compared to the number of holes. On the other hand, when the thickness of the electron transport layer 33 is about 600 mm or more, the number of electrons transferred to the organic light emitting layer 35 through the electron transport layer 33 may be greatly increased compared to the number of holes. In addition, when the thickness of the electron transport layer 33 is about 600 GPa or more, the overall thickness of the organic light generating device 100 may be increased.

As shown in FIG. 4, the electron transport layer 33 according to the present embodiment not only injects and transports electrons to the organic light emitting layer 35, but also provides holes provided from the second electrode 31 to the electron transport layer 33. By preventing the flow into the inside, the sharpness of the image generated from the organic light emitting layer 35 is greatly improved.

In addition, when the electron transport layer 33 for accelerating and transferring the electrons provided from the second electrode 32 to the organic light emitting layer 35 is formed as a single layer, the manufacturing process of the organic light generator 100 may be shortened. .

As described above, a single layer electron transport layer including electron transport members coated with single crystal silicon particles with an insulating film is disposed between the second electrode and the organic light emitting layer, thereby reducing the time required for the manufacturing process and manufacturing process of the organic light generating device. It prevents the light from being generated in the short axis and the electron transport layer and greatly improves the sharpness of the image formed by the light generated in the organic light emitting layer.

5 is a cross-sectional view showing an organic light generating apparatus according to a second embodiment of the present invention, FIG. 6 is a cross-sectional view showing an electron transmitting member constituting the electron transporting layer of FIG. 5, and FIG. 7 is an organic light of FIG. 5. It is sectional drawing which shows the hole and electron provided in the organic light emitting layer in the generator.

As shown in FIG. 5, since the organic light generating apparatus 100 is structurally similar to the organic light generating apparatus 100 illustrated in FIG. 1, the same reference numerals and the same materials are used for the same reference numerals. Therefore, the following description focuses on the electron transport layer 43, and detailed descriptions of other components will be described with reference to FIGS. 1 to 4.

The organic light generating apparatus 100 includes a first electrode 31, a second electrode 32, an organic emission layer 35, and an electron transport layer 43. In addition, the organic light generating apparatus 100 may further include a substrate 20, a hole injection layer 36, and a hole transport layer 37.

In this embodiment, the first electrode 31 is disposed on the substrate 20, and the hole injection layer 36 and the hole transport layer 37 are continuously disposed on the first electrode 31. The organic emission layer 35 is disposed on the hole transport layer 37, and the electron transport layer 43 is disposed on the organic emission layer 35.

Referring back to FIG. 5, the hole transport layer 37 is disposed on the hole injection layer 36. The hole transport layer 37 efficiently provides holes provided from the first electrode 31 and the hole injection layer 36 to the organic light emitting layer 35.

Meanwhile, in order to efficiently transfer electrons provided from the second electrode 32 to the organic emission layer 35, an electron transport layer 43 is formed between the second electrode 32 and the organic emission layer 35.

Referring to FIG. 7, the electron transport layer 43 according to the present embodiment is formed of a single layer, and the single layer electron transport layer 43 serves as an electron injection layer and an electron transport layer. That is, the electron transport layer 43 according to the present embodiment accelerates and transfers electrons from the second electrode 32 to the organic emission layer 35.

In order to inject and transport electrons from the second electrode 32 to the organic emission layer 35, the electron transport layer 43 includes a plurality of electron transport members 43c.

That is, in order to form an electron transport layer 43 for injecting and transporting electrons into the organic light emitting layer 35 as a single layer, the electron transport layer 43 includes an electron transport member 43c. .

The electron transfer member 43c includes the single crystal silicon particle 43b and the insulating film 43a which coats the single crystal silicon particle 43b.

In the present embodiment, the single crystal silicon particles 43b may have a diameter of about 50 mm 3 to about 100 mm 3. In addition, the insulating film 43a for coating the single crystal silicon particle 43b may be, for example, a silicon nitride film (SiN _X ) or a silicon oxide film (SiO _X ).

The electron transport layer 43 composed of the electron transport member 43c including the insulating film 43a coated with the single crystal silicon particle 43b is disposed at a uniform thickness between the second electrode 32 and the organic light emitting layer 35. do.

In the embodiment of the present invention, the method of forming the electron transport layer 43 is formed by applying the two methods described with reference to FIG. 2.

In this embodiment, the thickness of the electron transport layer 43 including the electron transport members 43c is very important. In this embodiment, the thickness of the electron transport layer 43 measured from the surface of the organic light emitting layer 35 has a thickness of about 300 kPa to about 600 kPa.

In the present embodiment, when the thickness of the electron transport layer 43 is about 300 mm or less, the number of electrons transferred to the organic light emitting layer 35 through the electron transport layer 43 may be greatly reduced compared to the number of holes. On the other hand, when the thickness of the electron transport layer 43 is about 600 mm or more, the number of electrons transferred to the organic light emitting layer 35 through the electron transport layer 43 may be greatly increased compared to the number of holes. In addition, when the thickness of the electron transport layer 43 is about 600 GPa or more, the overall thickness of the organic light generating device 100 may be increased.

As shown in FIG. 7, the electron transport layer 43 according to the present embodiment not only injects and transports electrons to the organic light emitting layer 35, but also provides holes provided from the second electrode 31. ), The sharpness of the image generated from the organic light emitting layer 35 is greatly improved.

In addition, when the electron transport layer 43 for accelerating and transferring the electrons provided from the second electrode 32 to the organic light emitting layer 35 is formed as a single layer, the manufacturing process of the organic light generating device 100 may be shortened and the manufacturing process may be performed. By shortening, manufacturing time can be shortened more.

According to the above, a single layer electron transfer layer including electron transfer members formed by coating or depositing single crystal silicon particles with an insulating film is disposed between the second electrode and the organic light emitting layer, and thus required for a manufacturing process and a manufacturing process of the organic light generating device. It is possible to shorten the time required to prevent the light from being generated in the electron transport layer and to greatly improve the sharpness of the image formed by the light generated in the organic light emitting layer.

8A is a flowchart showing a manufacturing method of an organic light generating apparatus according to a third embodiment of the present invention.

1, 5 and 8A, in order to manufacture the organic light generating apparatus, in step S10, first electrodes 31 are first formed on a substrate 20 such as a glass substrate. In this embodiment, a transparent conductive film (not shown) is formed on the substrate 20 to form the first electrode 31. Examples of the material used for the transparent conductive film include tin indium oxide, zinc indium oxide, amorphous tin indium oxide and the like. A photoresist film is formed on the transparent conductive film. The photoresist film is patterned by a photo process including an exposure process and a developing process to form a photoresist pattern on the transparent conductive film. The transparent conductive film is patterned using a photoresist pattern as an etching mask to form a first electrode 31 on the substrate 20.

In step S20, the hole injection layer 36 and the hole transport layer 37 are formed continuously on the first electrode 31. In the present embodiment, the hole injection layer 36 and the hole transport layer 37 may be formed by a vacuum deposition process.

After the hole injection layer 36 and the hole transport layer 37 are formed on the first electrode 31, in step S30, the organic light emitting layer 35 is formed on the hole transport layer 37. In the present embodiment, the organic light emitting layer 35 may be formed by a vacuum deposition process.

In the present embodiment, the organic light emitting layer 35 may generate red light, green light or blue light by combining holes provided through the hole injection layer 36 and the hole transport layer 37 and electrons transferred by the electron transfer layer to be described later. Which may include a polymeric material.

In step S40, the electron transport layers 33 and 43 are formed on the organic light emitting layer 35. 3 and 6, the electron transport layers 33 and 43 include a plurality of electron transport members 33c and 43c. Each of the electron transport members 33c and 43c may be formed by coating the single crystal silicon particles 33b and 43b formed in a powder form, or may form the single crystal silicon particles 33b and 43b by performing a photopolymerization reaction process by ultraviolet irradiation. have. When the single crystal silicon particles 33b and 43b are formed, the insulating films 33a and 43a are formed. The insulating films 33a and 43a are formed of a silicon nitride film (SiN _X ), a silicon oxide film (SiO _X ), or an organic insulating film material.

The single layer electron transfer layers 33 and 43 including the electron transfer members 33c and 43c having the single crystal silicon particles 33b and 43b coated by the insulating films 33a and 43a may be described later. The electron provided in the Efficiently transfer to the organic light emitting layer (35).

In the present embodiment, the electron transport layers 33 and 43 mix the single crystal silicon particles 33b and 43b in powder form with a solvent or a volatile solution, and then form them in the organic light emitting layer 35 or by UV polymerization. After that, the insulating films 33a and 43a are formed.

A silicon nitride film or a silicon oxide film is formed by depositing or coating the insulating film 33a or 43a to form a transfer member 33c as shown in FIG. 3 or a transfer member 43c as shown in FIG. To form. When the single crystal silicon particles 33b are formed on the organic light emitting layer 35 and then the insulating film 33a is formed by a coating process, a transfer member 33c having a structure as shown in FIG. 3 is formed, and the insulating film 43a is deposited. In the case of forming by a step, a transmission member 43c having a structure as shown in FIG. 6 is formed. In addition, a coating step of forming a preliminary electron transporting layer by applying a mixture of the electron transporting members 33c and 43c on the organic light emitting layer 35 and a step of removing the solvent include a drying step by heat treatment.

In this embodiment, the mixture consisting of the binder and the electron transfer members 33c and 43c is formed on the organic light emitting layer 35 by a silk screen process, a slit coating process or a spin coating process.

In addition, in the present embodiment, it is preferable that the thicknesses of the electron transport layers 33 and 43 measured from the surface of the organic light emitting layer 35 have a thickness of about 300 kPa to 600 kPa.

In step S50, after the electron transport layers 33 and 43 are formed on the organic light emitting layer 35, the second electrode 32 is formed on the electron transport layers 33 and 43. As an example of the material which can be used for the 2nd electrode 32, aluminum, an aluminum alloy, etc. are mentioned. The second electrode 32 provides electrons to the electron transport layers 33 and 43.

8B is a flowchart showing a manufacturing method of an organic light generating apparatus according to a fourth embodiment of the present invention.

1, 5 and 8B, in order to manufacture an organic light generating device, in steps S60 and S70, a second electrode 32 is formed of a conductive metal such as aluminum, an aluminum alloy, or the like, and the second electrode Electron transport layers 33 and 43 are formed on (32). As shown in FIG. 8A, the electron transport layers 33 and 43 are described with reference to FIGS. 3 and 6, and the electron transport layers 33 and 43 include a plurality of electron transport members 33c and 43c. Each of the electron transfer members 33c and 43c includes the single crystal silicon particles 33b and 43b formed in a powder form or by an ultraviolet polymerization process and the insulating films 33a and 43a coated or deposited with the single crystal silicon particles 33b and 43b. do. It is formed of a silicon nitride film (SiN _X ), a silicon oxide film (SiO _X ), or an organic insulating film material.

The single layer electron transfer layers 33 and 43 including the electron transfer members 33c and 43c having the single crystal silicon particles 33b and 43b coated or deposited by the insulating films 33a and 43a are formed at the second electrode 32. The provided electrons are efficiently transferred to the organic light emitting layer 35 which will be described later.

In the present exemplary embodiment, the electron transport layers 33 and 43 may mix the single crystal silicon particles 33b and 43b in a powder form with a solvent or a volatile solution or may polymerize the single crystal silicon particles 33b and 43b by an ultraviolet ray polymerization reaction. It is formed on the two electrodes 32, and then the insulating films 33a and 43a are formed (see description of FIG. 2).

The insulating films 33a and 43a are formed by depositing or coating a silicon nitride film or a silicon oxide film to form an electron transfer member 33c as shown in FIG. 3 or an electron transfer member 43c as shown in FIG. 6. ). When the single crystal silicon particles 33b are formed on the second electrode 32 and then the insulating film 33a is formed by a coating process, a transfer member 33c having a structure as shown in FIG. 3 is formed, and the insulating film 43a is formed. In the case of forming by a deposition process, an electron transfer member 43c having a structure as shown in FIG. 6 is formed. In addition, the coating process of forming the preliminary electron transporting layers 33 and 43 by applying a mixture of the electron transporting members 33c and 43c on the second electrode 32 and removing the solvent may be performed by drying by heat treatment. Process. The electron transport layers 33 and 43 preferably have a thickness of about 300 kPa to 600 kPa.

When the electron transport layer is formed as described above, the organic light emitting layer 35 is formed on the electron transport layer as in step S80. The organic light emitting layer 35 may be formed by an inkjet method, a vacuum deposition method, or a spin coating method. In the present embodiment, the organic light emitting layer 35 emits red light, green light or blue light by a combination of holes provided through the hole injection layer 36 and the hole transport layer 37 to be described later and electrons transferred by the electron transport layer to be described later. It may include a polymeric material that may occur.

When the organic light emitting layer 35 is formed as described above, as in steps 90 and 100, the hole transport layer 37 and the hole injection layer 36 are sequentially formed, and then the first hole injection layer 36 is formed. The electrode 31 is formed. A substrate 20 made of a transparent insulating material is formed on the first electrode 31.

9 is a plan view illustrating an organic light generating apparatus according to a fifth exemplary embodiment of the present invention, and FIGS. 10A and 10B are enlarged views of portion A of FIG. 9.

9 and 10, the organic light generating apparatus 500 includes a first substrate 105, a second substrate 200, and a sealing member 300.

The first substrate 105 may be, for example, a transparent substrate having substantially the same light transmittance as glass. In this embodiment, the first substrate 105 is a glass substrate. The first substrate 105 has a first surface 101 facing the second substrate 200, a second surface 102 facing the first surface 101, and first and second surfaces 101, 102. Have sides 103 connecting them.

The second substrate 200 may be, for example, a transparent substrate having a light transmittance substantially the same as that of glass. Alternatively, the second substrate 200 may be an opaque substrate. The second substrate 200 may include a third surface 201 facing the first surface 100, a fourth surface 202 facing the third surface 201, and third and fourth surfaces 201 and 202. Have sides 203 connecting them.

The display device 170 is disposed on the first surface 101 of the first substrate 105. The display device 170 includes an auxiliary electrode pattern 110, a first electrode 120, a partition pattern 130, an organic light generation pattern 140, a second electrode 150, and a spacer 160.

The auxiliary electrode pattern 110 is disposed on the first surface 101 of the first substrate 105. The auxiliary electrode pattern 110 is formed in a lattice shape when viewed on a plane. Examples of the material that may be used as the auxiliary electrode pattern 110 include molybdenum, aluminum, copper, chromium, and the like, and the auxiliary electrode pattern 110 further reduces the electrical resistance of the first electrode 120 to be described later.

The first electrode 120 is disposed on the first surface 101 of the first substrate 105 so that the first electrode 120 covers the auxiliary electrode pattern 110. In the present embodiment, examples of materials that can be used as the first electrode 120 include indium tin oxide (ITO), indium zinc oxide (IZO), and amorphous tin indium tin oxide (ITO). a-ITO) etc. are mentioned.

The partition pattern 130 is disposed on the first electrode 120, and the partition pattern 130 forms a pixel area on the first electrode 120. The barrier rib pattern 130 is formed in a number corresponding to the resolution of the organic light generating apparatus 500, and each of the barrier rib patterns 130 is spaced apart from each other by a predetermined interval and has a square having an opening exposing the first electrode 120 therein. It has a frame shape.

The spacer 160 is disposed on the first electrode 120. Alternatively, a portion of the spacer 160 may overlap the partition pattern 130. The spacer 160 is formed for each pixel area defined by each partition pattern 130. The spacer 160 may have, for example, a columnar shape, and the height of the spacer 160 measured from the surface of the first electrode 120 may correspond to that of the barrier rib pattern 130 measured from the surface of the first electrode 120. It is formed higher than height.

The organic light generation pattern 140 is disposed on the barrier rib pattern 130 as well as the first electrode 120 exposed by the barrier rib pattern 130 by a self-alignment method.

10A and 10B, the organic light generation pattern 140 formed on the first electrode 120 may include the hole injection layer 141, the hole transport layer 142, the organic emission layer 144, and the electron transport layer 146. , 246).

The hole transport layer 142 is disposed on the hole injection layer 141. The hole transport layer 142 efficiently provides holes provided from the first electrode 120 and the hole injection layer 141 to the organic light emitting layer 144.

The organic emission layer 144 may be disposed on the hole injection layer 141. Alternatively, the organic emission layer 144 may be directly disposed on the first electrode 120. The organic light emitting layer 144 may use various polymer materials suitable for generating red, green, and blue light.

The electron transport layers 146 and 246 are interposed between the second electrode 150 and the organic light emitting layer 144 which will be described later.

Referring again to FIGS. 10A and 10B, the electron transport layers 146 and 246 are composed of a single layer, and the single layer electron transport layers 146 and 246 serve as the electron injection layer and the electron transport layer. That is, the electron transport layers 146 and 246 inject and transport electrons from the second electrode 150 to be described later to the organic light emitting layer 144.

In order to inject and transport electrons from the second electrode 150 to the organic emission layer 144 to be described later, the electron transport layers 146 and 246 include a plurality of electron transport members 145 and 245.

The electron transfer members 145 and 245 include single crystal silicon particles and an insulating film coating single crystal silicon particles.

In this embodiment, the single crystal silicon particles may have a diameter of about 50 mm 3 to about 100 mm 3. In addition, the insulating film coating the single crystal silicon particles may be, for example, a silicon nitride film, a silicon oxide film, or an organic insulating material (for example, silicon nitride, silicon oxide).

As described above, the single crystal silicon particles may be formed by mixing a solvent or a volatile solution in powder form or by irradiating ultraviolet light to a mixture having the single crystal silicon particles to cause a photopolymerization reaction. FIG. 10A is a diagram in which an insulating film is coated on the single crystal silicon particles formed as described above, and FIG. 10B is a view in which the insulating film is formed by a deposition process after forming the single crystal silicon particles. As described above, the electron transport layers 146 and 246 including the electron transport members 145 and 245 are disposed to have a uniform thickness between the second electrode 150 and the organic light emitting layer 144.

In this embodiment, the thickness of the electron transport layers 146 and 246 including the electron transport members 145 and 245 is very important. In the present embodiment, the thicknesses of the electron transport layers 146 and 246 measured from the surface of the organic light emitting layer 144 have a thickness of about 300 kPa to about 600 kPa.

In the present embodiment, when the thickness of the electron transport layers 146 and 246 is about 300 mm or less, the number of electrons transferred to the organic light emitting layer 144 through the electron transport layers 146 and 246 may be greatly reduced compared to the number of holes. have. On the other hand, when the thickness of the electron transport layers 146 and 246 is about 600 mm or more, the number of electrons transferred to the organic light emitting layer 144 through the electron transport layers 146 and 246 may be greatly increased compared to the number of holes. In addition, when the thickness of the electron transport layer 144 is about 600 GPa or more, the overall thickness of the organic light generating device 500 may be increased.

The second electrode 150 is disposed on the electron transport layers 146 and 246. The second electrode 150 transfers electrons to the organic light emitting layer 144. Red light, green light, and blue light may be generated in the organic light emitting layer 144 according to the polymer material forming the organic light emitting layer 144 by electrons provided from the second electrode 150 and holes provided from the first electrode 120.

In the present embodiment, it is preferable that the second electrode 150 uses a material having a low work function, and examples of the material used as the second electrode 150 include aluminum or an aluminum alloy.

Referring back to FIG. 9, the driving device 210 is formed on the third surface 201 of the second substrate 200 to drive the display device 170 disposed on the first surface 101 of the first substrate 105. ) Is placed.

In order to drive one display device 170, the driving device 210 may include, for example, two thin film transistors 220 and one capacitor (not shown).

Each thin film transistor 220 includes a gate electrode 211, a gate insulating film 212, a channel layer 213, a source electrode 214a, and a drain electrode disposed on the third surface 201 of the second substrate 200. 214b.

The gate electrode 211 is electrically connected to a gate line (not shown) disposed on the third surface 201, and a timing signal is applied to the gate electrode 211.

The gate insulating film 212 insulates the gate electrode 211 and the gate line. The gate insulating layer 212 may include a silicon oxide layer, a silicon nitride layer, or an organic insulating material.

The channel layer 213 is disposed on the gate insulating layer 212. The channel layer 213 faces the gate electrode 211 covered by the gate insulating layer 212.

The channel layer 213 includes an amorphous silicon pattern 213a and an n + amorphous silicon pattern 213b. The amorphous silicon pattern 213a is disposed on the gate insulating film 212, and the n + amorphous silicon pattern 213b is disposed on the amorphous silicon pattern 213a. The n + amorphous silicon pattern 213b is disposed on the amorphous silicon pattern 213b so that a pair is spaced apart from each other.

The source electrode 214a is electrically connected to any one n + amorphous silicon pattern 213b, and the drain electrode 214b is electrically connected to the other n + amorphous silicon pattern 213b.

The thin film transistor 220 is insulated by the organic layer pattern 215 having a contact hole exposing the drain electrode 214b, and the drain electrode 214b of the thin film transistor 220 is electrically connected to the connection pattern 216. do.

The second electrode 150 of the display device 170 formed on the first substrate 105 is electrically connected to the connection pattern 216 of the thin film transistor 220 of the driving device 210 formed on the second substrate 200. do.

The sealing member 300 may be disposed in a closed loop shape along the edges of the first substrate 105 and / or the second substrate 200 when viewed in plan view. In order to physically bond the first and second substrates 100 and 200 using the sealing member 300, the sealing member 300 is a photocurable cured by light such as ultraviolet rays or a heat curable material that is cured by heat. It may include a substance. In addition, the sealing member 300 may include a deterioration preventing material that prevents deterioration of the display device 170 by being combined with oxygen and / or moisture penetrated from the outside. The deterioration preventing material may include an alkali-based metal oxide or an alkali-based metal.

11 and 12 are cross-sectional views illustrating a method of manufacturing an organic light generating apparatus according to a fifth embodiment of the present invention.

Referring to FIG. 11, an auxiliary electrode pattern 110 is formed on the first substrate 105. In the present embodiment, the auxiliary electrode pattern 110 is formed in a lattice shape when viewed in plan view. In this embodiment, the auxiliary electrode pattern 110 serves to lower the electrical resistance of the first electrode 120 to be described later. Examples of the material that can be used as the auxiliary electrode pattern 110 include molybdenum, aluminum, copper, chromium, and the like.

After the auxiliary electrode pattern 110 is formed on the first substrate 105, the first electrode 120 covering the auxiliary electrode pattern 110 is formed on the first substrate 105.

After the first electrode 120 is formed, an organic sacrificial layer pattern (not shown) including a photosensitive material is formed on the first electrode 120 facing the auxiliary electrode pattern 110. Since the auxiliary electrode pattern 110 has a lattice shape, the organic sacrificial film pattern is also formed in a lattice shape when viewed in plan view.

After the organic sacrificial layer pattern is formed, an inorganic layer (not shown) covering the first electrode 120 and the organic sacrificial layer pattern is formed.

Subsequently, the inorganic layer is patterned to form the barrier rib pattern 130 on the first electrode 120. The barrier rib pattern 130 has a rectangular frame shape, and the adjacent barrier rib patterns 130 expose an upper surface of the organic sacrificial layer pattern.

After the barrier rib pattern 130 exposing the top surface of the organic sacrificial layer pattern is formed, the organic sacrificial pattern is removed from the first electrode 120 by an etchant or an etching gas.

After the organic sacrificial layer pattern is removed from the first electrode 120, a spacer 160 having a columnar shape is formed on the first electrode 120. The spacer 160 may be formed on the first electrode 120 or the barrier rib pattern 130 by patterning the organic layer.

Thereafter, as shown in FIGS. 10A and 10B, the hole injection layer 141, the hole transport layer 142, and the organic emission layer 144 are sequentially formed over the entire surface of the first substrate 105. In the present embodiment, the hole injection layer 141, the hole transport layer 142, and the organic light emitting layer 144 may be formed by a vacuum deposition method.

In the present embodiment, the organic light emitting layer 144 is a red light, green light by the combination of the holes provided through the hole injection layer 141 and the hole transport layer 142 and the electrons transferred by the electron transport layer 146,246 to be described later Or it may include a polymer material capable of generating blue light.

Electron transport layers 146 and 246 are formed on the organic light emitting layer 144. Referring back to FIG. 11, the electron transport layers 146 and 246 include a plurality of electron transport members 145 and 245. Each electron transport member 145, 245 has a powder form, and each electron transport member 145, 245 includes single crystal silicon particles and an insulating film coated with single crystal silicon particles.

The single layer electron transport layers 146 and 246 including the electron transport members 145 and 245 having the single crystal silicon particles 145a coated by the insulating film efficiently transport electrons provided from the second electrode 150 to be described later. Transfer to the light emitting layer (144).

In the present exemplary embodiment, the electron transport layers 146 and 246 are dissolved in a solvent and are preliminarily coated by applying a mixture of the electron transport members 145 and 245 to a binder having adhesiveness and volatility on the organic light emitting layer 144. An application process for forming the electron transport layer and a drying process for removing the solvent (volatile solution).

In this embodiment, the mixture consisting of the binder and the electron transfer members 145 and 245 is formed on the organic light emitting layer 144 by a silk screen process, a slit coating process or a spin coating process.

In addition, in the present embodiment, it is preferable that the thickness of the electron transport layers 146 and 246 measured from the surface of the organic light emitting layer 144 has a thickness of about 300 kPa to 600 kPa.

After the electron transport layers 146 and 246 are formed on the organic light emitting layer 144, the second electrode 150 is formed on the electron transport layers 146 and 246. Examples of the material that can be used as the second electrode 150 include aluminum, aluminum alloy, and the like. The second electrode 150 provides electrons to the electron transport layers 146 and 246.

As shown in FIG. 12, a driving device 210 for applying a driving signal for generating light from the display device 170 formed on the first substrate 105 is manufactured on the second substrate 200.

The driving device 210 includes, for example, a switching transistor, thin film transistors 220 such as a driving transistor, and a capacitor (not shown).

In order to form the thin film transistors 220, a gate electrode 211 is formed on the second substrate 200, and a gate insulating layer 212 covering the gate electrode 211 is formed on the gate electrode 211. A channel layer 213 having an amorphous silicon pattern 213a and a pair of n + amorphous silicon patterns 213b is formed on the gate insulating layer 212. The source electrode 214a is formed on one of the n + amorphous silicon patterns 213b, and the drain electrode 214b is formed on the other n + amorphous silicon pattern 213b.

After the driving device 220 is manufactured on the second substrate 200, an organic material having an opening covering the driving device 210 and exposing the drain electrode 214b of the thin film transistor 220 is formed on the second substrate 200. The film pattern 215 is formed.

Thereafter, a connection pattern 216 connected to the drain electrode 214b is formed in the opening of the organic layer pattern to manufacture the second substrate 200.

As shown in FIGS. 11 and 12, after the first substrate 105 having the display device 170 and the second substrate 200 having the driving device 210 are manufactured, the second substrate 200 faces the second substrate 200. The sealing member 300 is formed on any one of the first substrate 105 and the second substrate 200 facing the first substrate 105.

The sealing member 300 may be formed in a closed loop shape formed along the edge of the second substrate 200 when viewed in plan view. The sealing member 300 may include a heat curable material that is cured by heat or a photocurable material that is cured by light such as ultraviolet rays. In addition, the coupling member 300 may include a deterioration preventing material that prevents deterioration of the display device 170 by combining with oxygen and / or moisture penetrating from the outside. The deterioration preventing material may include an alkali-based metal oxide or an alkali-based metal.

After the sealing member 300 is disposed along the edge of the second substrate 200, the first substrate 105 and the second substrate 200 are coupled to each other by the sealing member 300. The second electrode 150 of the first substrate 105 is electrically connected to the connection pattern 216 of the second substrate 200 by the sealing member 300.

After the second electrode 150 of the first substrate 105 and the connection pattern 216 of the second substrate 200 are electrically connected, the sealing member 300 is cured by heat or light to cure the first and the first materials. The two substrates 100 and 200 are physically and electrically coupled to each other to manufacture an organic light generating device.

As described above in detail, in the organic light generating apparatus, the electron transport layer for providing electrons to the organic light emitting layer is changed from a multilayer structure to a single layer structure composed of an electron providing member including a single crystal silicon and an insulating layer surrounding the single crystal silicon. It has the effect of greatly shortening the manufacturing process of the generator.

Although the detailed description of the present invention has been described with reference to the embodiments of the present invention, those skilled in the art or those skilled in the art will have the spirit and scope of the present invention as set forth in the claims below. It will be appreciated that various modifications and variations can be made in the present invention without departing from the scope of the art.

Claims (22)

A first electrode providing a hole; A second electrode facing the first electrode and providing electrons; An organic light emitting layer interposed between the first and second electrodes; An electron transport layer disposed between the second electrode and the organic light emitting layer, And the electron transporting layer is a single layer including an electron transporting member for injecting and transferring electrons to the organic light emitting layer while preventing holes from entering the electron transporting layer from the first electrode. The organic light emitting device of claim 1, wherein the electron transport member comprises single crystal silicon particles. The organic electroluminescent device according to claim 2, wherein each of the single crystal silicon particles has a diameter of 50 kPa to 100 kPa. The organic light emitting device of claim 2, wherein each of the single crystal silicon particles is surrounded by an insulating layer. The organic light emitting display device according to claim 4, wherein the insulating layer is any one of SiNx, SiOx, and an organic insulating material. The organic electroluminescent device according to claim 2, wherein each of the single crystal silicon particles surrounded by the insulating layer is disposed between the second electrode and the organic light emitting layer. The organic electroluminescent device according to claim 2, wherein the single crystal silicon particles are present in an insulating layer. The organic light emitting device of claim 7, wherein the insulating layer is any one of silicon nitride, silicon oxide, and an organic insulating material. The organic electroluminescent device according to claim 1, wherein the thickness of the electron transport layer disposed between the organic light emitting layer and the second electrode and including the electron transport member is 300 kPa to 600 kPa. Forming a second electrode on the substrate; Sequentially forming a hole injection layer and a hole transport layer on the second electrode; Forming an organic light emitting layer on the hole transport layer; Forming an electron transport layer including a plurality of electron transport members and an insulating layer on the organic light emitting layer; And Forming a first electrode on the electron transport layer manufacturing method of an organic light emitting device. The method of claim 10, wherein forming the electron transport layer, Mixing single crystal silicon particles in powder form with the volatile solution; Forming a mixed product on the electron transport layer; And forming an insulating film on the single crystal silicon particles. The method of claim 11, wherein the forming of the insulating layer comprises forming the insulating layer by spin coating or printing. The method of claim 11, wherein forming the mixing result comprises: The organic light emitting device manufacturing method comprising the step of forming an inkjet method on the organic light emitting layer. The method of claim 10, wherein the insulating layer is any one of silicon nitride, silicon oxide, and an organic insulating material. Forming a first electrode on the substrate; Forming an electron transport layer including a plurality of electron transport members and an insulating layer on the first electrode; Forming an organic light emitting layer on the electron transport layer; Sequentially forming a hole transport layer and a hole injection layer on the organic light emitting layer; And Forming a second electrode on the hole injection layer manufacturing method of an organic light emitting device. The method of claim 14, wherein forming the electron transport layer comprises: Mixing single crystal silicon particles in powder form with either the volatile solution or the solvent; Forming a mixed product on the first electrode; And forming an insulating film on the single crystal silicon particles. The method of claim 16, wherein the forming of the insulating layer comprises forming the insulating layer by spin coating or printing. The method of claim 16, wherein the forming of the mixing result, An organic electroluminescent device manufacturing method comprising the step of forming on the organic light emitting layer by an inkjet method. The method of claim 15, wherein the insulating layer is any one of silicon nitride, silicon oxide, and an organic insulating material. A first substrate including a display device; A first electrode disposed to provide a hole in the first substrate; A second electrode disposed to provide electrons facing the first electrode; An organic light emitting layer disposed between the first and second electrodes; And An electron transport layer disposed between the second electrode and the organic light emitting layer, The electron transport layer is a single layer including an electron transport member for injecting and transporting electrons to the organic light emitting layer while preventing holes from entering the electron transport layer from the first electrode, A second substrate having a drive device; And And a sealing member for joining the first and second substrates. The organic electroluminescent device according to claim 20, wherein the single crystal silicon particles are present in an insulating layer. 21. The organic light emitting device of claim 20, wherein any one of the single crystal silicon particles is surrounded by the insulating layer.

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