KR20070113875A - Spacer and electron emission display device with the spacer - Google Patents

Abstract

A spacer and an electron emission display device having the same are provided to prevent distortion of equipotential lines even when temperature is linearly changed from an electron emission portion to an anode. A spacer is interposed between a first substrate(10) and a second substrate(12) which form a vacuum envelope. A preform(22) is made of dielectric and has a certain height along a thickness direction of the first and second substrates. A first coating layer(24) is formed on a surface of the preform which is adjacent to the first substrate. A second coating layer(26) is formed on a surface of the preform which is adjacent to the second substrate, and is made of material having conductivity lower than that of the first coating layer.

Description

Spacer and Electron Emission Display Device with The Spacer

1 is a partial cross-sectional view schematically illustrating an electron emission display device according to an exemplary embodiment of the present invention.

2 is a partial cross-sectional view schematically illustrating an electron emission display device in which only a first coating layer is formed on a spacer.

3 is a partially exploded perspective view of a field emission array (FEA) type electron emission display device according to an embodiment of the present invention.

4 is a partial cross-sectional view of a field emission array (FEA) type electron emission display device in accordance with one embodiment of the present invention.

5 is a partial cross-sectional view of a surface conduction emission (SCE) type electron emission display device according to an embodiment of the present invention.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron emission display device, and more particularly, to spacers installed in a vacuum container to support a compressive force applied to the vacuum container, and an electron emission display device having the spacers.

In general, electron emission elements may be classified into a method using a hot cathode and a cold cathode according to the type of electron source.

Here, the electron-emitting device using the cold cathode is a field emitter array (FEA) type, a surface conduction emission type (SCE) type, a metal-insulation layer-metal Metal (MIM) type and Metal-Insulator-Semiconductor (MIS) type are known.

The field emission array (FEA) type electron emission device uses a principle that electrons are easily emitted by an electric field in vacuum when a material having a low work function or a high aspect ratio is used as an electron source. Molybdenum (Mo) Alternatively, an example has been developed in which an electron emission unit is formed of a tip structure having a sharp tip, mainly made of silicon (Si), or an electron emission unit is formed of a carbon-based material such as carbon nanotubes.

The surface conduction emission (SCE) type electron emission device forms an electron emission portion by providing a conductive thin film between a first electrode and a second electrode disposed to face each other on a substrate and providing a micro crack in the conductive thin film. By applying a voltage to both electrodes, a principle is used in which electrons are emitted from the electron emission unit when a current flows to the surface of the conductive thin film.

Metal-insulating layer-metal (MIM) type and metal-insulating layer-semiconductor (MIS) type electron emission devices have electron emission structures of metal / insulation layer / metal (MIM) and metal / insulation layer / semiconductor (MIS) structures, respectively. When a voltage is applied between two metals or metals and semiconductors having an insulating layer interposed therebetween, electrons supplied from the metal or semiconductor pass through the insulating layer and reach the upper metal by a tunneling phenomenon. In addition, a principle in which electrons having energy above a work function of the upper metal are emitted from the upper metal among the reached electrons is used.

The electron emission devices are arranged in an array on the first substrate to form an electron emission device, and the electron emission device is combined with a second substrate having a light emitting unit composed of a fluorescent layer and an anode electrode to emit electrons. A display device (electron emission display device) is configured.

The electron emission device includes a plurality of driving electrodes that function as scan electrodes and data electrodes together with the electron emission portion to control the electron emission amount of the electron emission portions per unit pixel. The electron emission display device applies a high voltage to the anode electrode to accelerate electrons emitted from the first substrate side toward the second substrate, and these electrons excite the fluorescent layer to emit visible light, thereby making a predetermined light emission or display.

In the electron emission display device, the first substrate and the second substrate are edge-bonded to each other by a sealing member such as a frit bar, and then the internal space is evacuated to a vacuum of approximately 10 ^-6 Torr so that the vacuum container together with the sealing member is removed. Configure The vacuum container receives a strong compressive force due to the pressure difference between the inside and the outside, and the compressive force increases in proportion to the screen size.

Therefore, the vacuum container supports a compression force applied to the vacuum container by installing a plurality of spacers therein, and maintains a constant gap between the first substrate and the second substrate. In this case, the spacer is mainly made of a dielectric such as glass or ceramic so that the driving electrodes on the first substrate and the anode electrode on the second substrate are not shorted through the spacer.

However, in the conventional electron emission display device, electrons emitted from the electron emission portion tend to spread with a predetermined divergence angle instead of going straight toward the second substrate. Due to the electron beam spread, electrons collide with the surface of the spacer, and the spacer where the electron collides is charged with a positive or negative potential according to the material properties (dielectric constant or secondary electron emission coefficient), and the charged spacer Distorts the electron beam path by changing the surrounding electric field. For example, a spacer charged at a positive potential attracts an surrounding electron beam, and a spacer charged at a negative potential pushes the surrounding electron beam. Such path distortion of the electron beam interferes with accurate color representation around the spacer, and causes display quality deterioration in which the spacer spot is visible on the screen.

Therefore, in order to prevent the charging of the spacer, a resistive layer such as a semiconductor is coated on the surface.

However, heat is generated due to the heat dissipation in the resistive layer and the flow of current due to the electron emission in the electron emission part, and thus the temperature of the spacer is linearly changed from the electron emission part toward the anode electrode.

The characteristics of the resistance layer formed to prevent the charging of the spacer in the above is that the conductivity of the electrons increases as the temperature increases, so that the equipotential lines from the electron emission side to the anode side do not form an equal interval, and are in the anode direction. You will be gathered. As a result, a phenomenon in which the electron trajectory is pushed to the opposite side of the spacer occurs.

The present invention is to solve the above problems, an object of the present invention is to coat a highly conductive material having a low specific resistance value on the anode side surface of the spacer to prevent the phenomenon of equipotential lines in the anode direction and around the spacer The present invention provides a spacer capable of suppressing electron beam distortion and a deterioration in display quality thereof, and an electron emission display device having the spacer.

In order to achieve the above object, the present invention relates to a spacer for an electron emission display device which is provided between a first substrate and a second substrate constituting a vacuum container to support a compressive force applied to the vacuum container. A substrate formed of a dielectric material having an arbitrary height along the thickness direction of the two substrates, a first coating layer formed on a surface close to the first substrate of the substrate, and a surface formed on the surface close to the second substrate of the substrate Provided is a spacer for an electron emission display device including a second coating layer formed of a highly conductive material having a lower specific resistance than that of the first coating layer.

The second coating layer is preferably formed in the total height of the spacer up to about 20 to 50% from the anode side because it can sufficiently prevent the phenomenon of equipotential lines flocking.

Further, in order to achieve the above object, the present invention provides a first substrate and a second substrate disposed opposite to each other, an electron emitting device provided on the first substrate and composed of a plurality of electron emitting elements, and a second substrate. And a plurality of spacers provided between the first substrate and the second substrate, the light emitting unit including a fluorescent layer and an anode electrode positioned on one surface of the fluorescent layers, wherein the spacer includes a first substrate and a second substrate. A matrix formed of a dielectric material having an arbitrary height along the thickness direction of the substrate, a first coating layer formed on a surface near the first substrate of the matrix, and a surface formed on the surface near the second substrate of the matrix, Provided is an electron emission display device including a second coating layer formed of a highly conductive material having a lower specific resistance than a first coating layer.

The electron emission device may be any one of a field emission array (FEA) type, a surface conduction emission (SCE) type, a metal-insulating layer-metal (MIM) type, and a metal-insulating layer-semiconductor (MIS) type.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a partial cross-sectional view schematically illustrating an electron emission display device according to an exemplary embodiment of the present invention.

Referring to the drawings, the electron emission display device includes a first substrate 10 and a second substrate 12 which are arranged in parallel to each other at predetermined intervals. Sealing members (not shown) are disposed at the edges of the first substrate 10 and the second substrate 12 to bond the two substrates, and the internal space is evacuated with a vacuum of approximately 10 ⁻⁶ Torr to form the first substrate ( 10) and the second substrate 12 and the sealing member constitute a vacuum container.

On the opposite surface of the first substrate 10 to the second substrate 12, the electron emission elements 100 are arranged in an array to form the electron emission device 101 together with the first substrate 10, and emit electrons. The device 101 is combined with the light emitting unit 102 provided on the second substrate 12 and the second substrate 12 to form an electron emission display device.

The electron emission device 100 includes an electron emission unit and driving electrodes to form a basic unit for controlling ON / OFF of electron emission and an electron emission amount, and are disposed for each unit pixel on the first substrate 10.

The light emitting unit 102 includes a fluorescent layer 14, for example, red, green, and blue fluorescent layers 14R, 14G, 14B, and a black layer 16 positioned between the fluorescent layers 14. ) And an anode electrode 18 positioned on either surface of the fluorescent layers 14 and the black layer 16. The fluorescent layer 14 is disposed so that one fluorescent layer 14R, 14G, 14B corresponds to each electron emission element 100. In the drawing, for example, the anode electrode 18 is positioned on one surface of the fluorescent layers 14 and the black layer 16 facing the first substrate 10.

Spacers 20 are disposed between the first substrate 10 and the second substrate 12 to support the compressive force applied to the vacuum container and to keep the gap between the first substrate 10 and the second substrate 12 constant. do. The spacers 20 are positioned to correspond to the black layer 16 so as not to invade the fluorescent layer 14 and have a predetermined height along the thickness direction of the two substrates 10 and 12.

In the above configuration, the electron emission device emits electrons by the action of the electron emission unit and the driving electrodes for each electron emission element 100, and the anode electrode 18 receives a high voltage (a voltage of about several to several tens of kV). The electrons are accelerated toward the second substrate 12, and the accelerated electrons collide with the fluorescent layer 14 of the corresponding unit pixel to emit light.

In this process, the light emitting unit 102 has a voltage difference of several to several tens of kV corresponding to the magnitude of the anode voltage with respect to the electron emitting device 101. This generates a voltage gradient in which the voltage gradually rises from the electron emitting device 101 toward the light emitting unit 102 in the vacuum region between the first substrate 10 and the second substrate 12.

In addition, in the driving process, the electrons emitted from each of the electron emission devices 100 propagate toward the second substrate 12, and as a result, some of the electrons collide with the surface of the spacer 20.

The spacer 20 according to the present embodiment has the following configuration so that its electrical characteristics (secondary electron emission coefficient) vary according to its height under the driving environment of the electron emission display device as described above. Minimize electron beam distortion.

In the present embodiment, the spacer 20 is located on the surface of the matrix 22 made of a dielectric material and the lower region (near the first substrate 10) facing the first substrate 10 of the matrix 22. The first coating layer 24 and the second coating layer 26 positioned on the surface of the upper region (near the second substrate 12) facing the second substrate 12 of the matrix 22. In this case, the second coating layer 26 is formed of a material having a higher conductivity than the first coating layer 24.

The matrix 22 is made of a dielectric such as glass, tempered glass, ceramic, or glass-ceramic mixture, and may be formed in various shapes such as columnar or rod-shaped.

The first coating layer 24 is formed using an oxide, a semiconductor, diamond-like carbon (DLC) having a high resistivity value, and the second coating layer 26 is a metal or amorphous silicon (a-Si) having a relatively low resistivity value. (Dopant P)) and the like.

In the above, a material having a low resistivity is relatively higher than a material having a high resistivity.

Chromium oxide (Cr ₂ O ₃ ) or the like may be used as an oxide forming the first coating layer 24, and amorphous silicon (a-Si) may be used as the semiconductor.

Examples of the metal forming the second coating layer 26 include aluminum (Al), chromium (Cr), copper (Cu), zinc (Zn), nickel (Ni), platinum (Pt), gold (Au), and silver ( Ag), palladium (Pd) or alloys thereof and the like can be used.

The second coating layer 26 is preferably formed at about 20 to 50% of the total height of the spacer 20 from the anode electrode 18, since it is possible to prevent the phenomenon of equipotential lines from gathering.

When the second coating layer 26 is formed to less than 20% of the total height of the spacer 20 from the anode electrode 18, it is difficult to sufficiently correct the equipotential line that is pushed to the opposite side of the spacer 20.

In addition, when the second coating layer 26 is formed to exceed 50% of the total height of the spacer 20 from the anode electrode 18 side, the equipotential lines may be too close to the spacer 20, which may cause distortion in the reverse direction. have.

The height of forming the second coating layer 26 is set in consideration of the temperature and the anode voltage increased from the first substrate 10.

As shown in FIG. 2, when only the first coating layer 24 is formed in the spacer 20 to prevent electrification, heat dissipation in the first coating layer 24, which is a resistance layer, and electrons in the electron emission device 100 are formed. Heat is generated due to the flow of current due to the emission, which causes the temperature of the spacer 20 to change linearly from the electron emission element 100 toward the anode electrode 18.

The characteristics of the first coating layer 24 is that the conductivity of the electrons increases as the temperature increases, so that the equipotential lines from the electron emission element 100 to the anode electrode 18 do not form an equal interval, and the anode direction , A phenomenon in which the electron trajectory is pushed to the opposite side of the spacer 20 occurs (see the electron trajectory indicated by the dotted arrow located on the left side in FIG. 2).

As shown in FIG. 1, when the first coating layer 24 and the second coating layer 26 are formed, a current flow in the second coating layer 26 having relatively high conductivity is smoother than that of the first coating layer 24. Since the equipotential lines do not occur, the compensation of the trajectory of the electrons pushed to the opposite side of the spacer 20 is performed (see the trajectory of the electrons indicated by dotted arrows on the left side of FIG. 1).

As described above, the spacer 20 of the embodiment according to the present invention corrects the electron beam path traveling around the spacer 20 by the first coating layer 24 and the second coating layer 26, and thus the electron emission display of the present embodiment. The device can accurately express colors around the spacer 20 and solve the problem of showing the spacer 20 on the screen.

The above-mentioned electron emission display device can be any one of a field emission array (FEA) type, a surface conduction emission (SCE) type, a metal-insulating layer-metal (MIM) type, and a metal-insulating layer-semiconductor (MIS) type. It may be made of a device.

3 and 4, the structure of the field emission array (FEA) type electron emission display device will be described, and the structure of the surface conduction emission type (SCE) type electron emission display device will be described with reference to FIG. 5. do.

3 and 4 are partial exploded perspective and partial cross-sectional views, respectively, of a field emission array type electron emission display device according to an embodiment of the present invention.

Referring to the drawings, the cathode electrodes 28, which are the first electrodes, are formed in a stripe pattern along one direction of the first substrate 10 on the first substrate 10, and cover the cathode electrodes 28. The first insulating layer 30 is formed on the entirety of (10). Gate electrodes 32, which are second electrodes, are formed on the first insulating layer 30 in a stripe pattern along a direction orthogonal to the cathode electrodes 28.

An intersection area between the cathode electrodes 28 and the gate electrodes 32 constitutes one unit pixel, and electron emission parts 34 are formed in each unit pixel on the cathode electrode 28. In addition, openings 301 and 321 corresponding to the electron emission parts 34 are formed in the first insulating layer 30 and the gate electrodes 32 to form the electron emission parts 34 on the first substrate 10. To be exposed.

The electron emission part 34 may be formed of materials emitting electrons, for example, a carbon-based material or a nanometer (nm) size material, when an electric field is applied in a vacuum. The electron emission part 34 may include, for example, carbon nanotubes (CNT), graphite, graphite nanofibers, diamonds, diamond-like carbons (DLC), fullerenes (C ₆₀ ), silicon nanowires, and combinations thereof. Direct growth, screen printing, chemical vapor deposition, or sputtering may be applied to the preparation method.

On the other hand, the electron emission unit may be formed of a tip structure having a pointed tip mainly made of molybdenum (Mo) or silicon (Si).

In the figure, the circular electron emitters 34 are arranged in a line along the longitudinal direction of the cathode electrode 28, but the shape, the number and arrangement per pixel area, etc. of the electron emitter 34 are shown. It is not limited to this and can be variously modified.

In addition, the structure in which the gate electrodes 32 are positioned on the cathode electrodes 28 with the first insulating layer 30 therebetween has been described, but the gate electrodes 32 have the first insulating layer therebetween. A structure located below the field is also possible. In this case, the electron emission part may be formed on the side of the cathode electrode on the first insulating layer.

The focusing electrode 36, which is a third electrode, is formed on the gate electrodes 32 and the first insulating layer 30. A second insulating layer 38 is positioned below the focusing electrode 36 to insulate the gate electrodes 32 and the focusing electrode 36, and passes the electron beam through the focusing electrode 36 and the second insulating layer 38. Openings 361 and 381 are provided.

The focusing electrode 36 may form one opening for each electron emission unit 34 to focus electrons emitted from each electron emission unit 34, and one opening 361 may be formed for each unit pixel. The electrons emitted from one unit pixel may be collectively focused. The figure shows the second case.

Next, on one surface of the second substrate 12 opposite to the first substrate 10, the fluorescent layers 14, for example, the red, green, and blue fluorescent layers 14R, 14G, and 14B are each other. It is formed at arbitrary intervals, and a black layer 16 is formed between the fluorescent layers 14 to improve the contrast of the screen.

An anode electrode 18 made of a metal film such as aluminum (Al) is formed on the fluorescent layer 14 and the black layer 16. The anode electrode 18 receives the high voltage necessary for accelerating the electron beam from the outside to maintain the fluorescent layer 14 in a high potential state, and visible light emitted toward the first substrate 10 of the visible light emitted from the fluorescent layer 14. Is reflected toward the second substrate 12 to increase the brightness of the screen.

The anode electrode may be formed of a transparent conductive film such as indium tin oxide (ITO), in which case the anode electrode is positioned on one surface of the fluorescent layer 14 and the black layer 16 facing the second substrate 12. Moreover, the structure which forms simultaneously the above-mentioned transparent conductive film and a metal film as an anode electrode is also possible.

As described above, the spacer 20 positioned between the first substrate 10 and the second substrate 12 may be formed of a matrix 22 made of a dielectric material and a first region formed on the surface of the lower region of the matrix 22. It consists of a coating layer 24 and a second coating layer 26 formed on the surface of the upper region of the matrix 22.

The electron emission display device having the above configuration is driven by supplying a predetermined voltage to the cathode electrodes 28, the gate electrodes 32, the focusing electrode 36 and the anode electrode 18 from the outside.

For example, any one of the cathode electrodes 28 and the gate electrodes 32 may receive a scan driving voltage to serve as scan electrodes, and the other electrodes may receive a data driving voltage to serve as data electrodes. In addition, the focusing electrode 36 receives a voltage required for electron beam focusing, for example, 0 V or a negative DC voltage of several to several tens of volts, and the anode electrode 18 is a voltage necessary for accelerating the electron beam, for example, several hundred to several thousand V. DC voltage of is applied.

As a result, an electric field is formed around the electron emission part 34 in the unit pixels in which the voltage difference between the cathode electrode 28 and the gate electrode 32 is greater than or equal to a threshold, and electrons are emitted therefrom. The emitted electrons are focused through the opening 361 of the focusing electrode 36 to the center of the electron beam bundle, and are attracted to the fluorescent layer 14 of the corresponding unit pixel by being attracted by the high voltage applied to the anode electrode 18. It emits light.

5 is a partial cross-sectional view of a surface conduction emission type electron emission display device according to an embodiment of the present invention. Since the configuration of the light emitting unit and the spacer provided on the second substrate is the same as that of the field emission array type electron emission display device described above, only the configuration of the electron emission device will be described here briefly.

Referring to the drawings, the first electrode 40 and the second electrode 42 are spaced apart from each other on each of the unit pixels on the first substrate 10, and above the first electrode 40 and the second electrode 42, respectively. The first conductive thin film 44 and the second conductive thin film 46 are located close to each other. An electron emission portion 48 is formed between the first conductive thin film 44 and the second conductive thin film 46, and the electron emission portion 48 is formed through the first thin films 44 and 46. 40 is electrically connected to the second electrode 42.

The first electrode 40 and the second electrode 42 may be formed of various conductive materials. The first conductive thin film 44 and the second conductive thin film 46 may include nickel (Ni), gold (Au), It consists of a thin film of fine particles using a conductive material such as platinum (Pt) and palladium (Pd).

The electron emission part 48 may be formed of fine cracks provided between the first conductive thin film 44 and the second conductive thin film 46, or may be formed of a carbon-based material film. In the second case, the electron emitter 48 is formed of carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbon, fullerene (C ₆₀ ), silicon nanowires, and the like as in the field emission array (FEA) type described above. It may include a combination material of.

In the above structure, when a voltage is applied to each of the first electrode 40 and the second electrode 42, the surface of the electron emission part 48 is formed through the first conductive film 44 and the second conductive film 46. When the current flows in a horizontal direction, the surface conduction electrons are emitted, and the emitted electrons are attracted to the second substrate 12 by the high voltage applied to the anode electrode 18 and collide with the corresponding fluorescent layer 14. To emit light.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

As described above, since the electron emission display device according to the present invention includes a spacer including the matrix, the first coating layer, and the second coating layer, the equipotential lines are distorted even when the temperature is linearly changed from the electron emission portion to the anode direction. Because it can be prevented, it is possible to accurately represent the color around the spacer, it is possible to implement the excellent display quality by not showing the spacer position on the screen.

Claims (15)

A spacer for an electron emission display device provided between a first substrate and a second substrate constituting a vacuum container to support a compressive force applied to the vacuum container. A matrix composed of a dielectric having an arbitrary height along the thickness direction of the first substrate and the second substrate, A first coating layer formed on a surface close to the first substrate of the matrix, And a second coating layer formed on a surface close to the second substrate of the matrix and formed of a highly conductive material having a lower specific resistance than that of the first coating layer. The method according to claim 1, The first coating layer is formed by selecting from oxides, semiconductors, diamond-like carbon (DLC) having a high specific resistance, And the second coating layer is formed of a metal having relatively low resistivity or amorphous silicon (dopant P). The method according to claim 2, A spacer for an electron emission display device using chromium oxide as an oxide for forming the first coating layer and amorphous silicon (a-Si) as a semiconductor. The method according to claim 2, Examples of the metal forming the second coating layer include aluminum (Al), chromium (Cr), copper (Cu), zinc (Zn), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), A spacer for an electron emission display device used by selecting from palladium (Pd) or alloys thereof. The method according to claim 1, And the second coating layer is formed in a range of 20 to 50% of the total height of the spacer from the second substrate side. A first substrate and a second substrate disposed opposite to each other, an electron emitting device provided on the first substrate, the electron emitting device comprising a plurality of electron emitting elements, and a fluorescent layer provided on the second substrate and any one surface of the fluorescent layers A light emitting unit including an anode electrode positioned at the first substrate, and a plurality of spacers positioned between the first substrate and the second substrate, The spacer has an arbitrary height along the thickness direction of the first substrate and the second substrate, a matrix made of a dielectric, a first coating layer formed on a surface close to the first substrate of the matrix, and a second substrate of the matrix. And a second coating layer formed on a surface close to the substrate and formed of a highly conductive material having a specific resistance lower than that of the first coating layer. The method according to claim 6, The first coating layer is formed by selecting from oxides, semiconductors, diamond-like carbon (DLC) having a high specific resistance, And the second coating layer is formed of a metal having relatively low resistivity or amorphous silicon (dopant P). The method according to claim 7, Chromium oxide is used as an oxide forming the first coating layer, amorphous silicon (a-Si) is used as a semiconductor, Examples of the metal forming the second coating layer include aluminum (Al), chromium (Cr), copper (Cu), zinc (Zn), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), An electron emission display device used by selecting from palladium (Pd) or alloys thereof. The method according to claim 6, And the second coating layer is formed in a range of 20 to 50% from an anode electrode side of the entire height of the spacer. The method according to claim 6, Cathode electrodes in which the electron emitting device is formed along one direction of the first substrate; Gate electrodes formed along a direction crossing the cathode electrodes with an insulating layer interposed therebetween; And electron emission portions electrically connected to the cathode electrode. The method according to claim 10, And the electron emission unit comprises at least one material selected from the group consisting of carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbons, fullerenes (C ₆₀ ), and silicon nanowires. The method according to claim 10, And a focusing electrode on which the electron emission device is insulated from the cathode and gate electrodes and positioned above the cathode and gate electrodes. The method according to claim 6, First and second electrodes with the electron emitting device spaced apart from each other; First conductive thin films formed on the first electrodes; Second conductive thin films formed on the second electrodes and positioned adjacent to each of the first conductive thin films; And electron emission portions provided between each of the first conductive thin film and the second conductive thin film. The method according to claim 13, An electron emission display device in which the electron emission section is made of fine cracks. The method according to claim 13, And the electron emission unit comprises at least one material selected from the group consisting of carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbons, fullerenes (C ₆₀ ), and silicon nanowires.

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