KR20070112984A - Sealing member, electron emission display device having the sealing member and method of manufacturing the same - Google Patents

Abstract

A sealing member, an electron emission display device having the same and a manufacturing method thereof are provided to minimize mis-alignment between substrates by fixing any one of the substrates when the substrates are burned. A sealing member interposed between two substrates(10,20) includes a glass frame(320), a first frit(310) adhered to one side of the glass frame and any one of the substrates, and a second frit(300) adhered to the other side of the glass frame and the other substrate. The first frit and the second frit are made of amorphous material having different softening points, or have different crystallization state.

Description

Sealing member, the electron emission display device provided with this sealing member, and its manufacturing method {SEALING MEMBER, ELECTRON EMISSION DISPLAY DEVICE HAVING THE SEALING MEMBER AND METHOD OF MANUFACTURING THE SAME}

1 is a cross-sectional view illustrating an electron emission display device according to an exemplary embodiment of the present invention.

2A and 2B are cross-sectional views illustrating examples of structures formed on the first and second substrates of FIG. 1, respectively.

3A to 3C are cross-sectional views illustrating a method of manufacturing an electron emission display device according to an exemplary embodiment of the present invention.

The present invention relates to an electron emission display device, and more particularly, to a sealing member, an electron emission display device having the same and a method of manufacturing the same.

In general, an electron emission element is classified into a method using a hot cathode and a method using a cold cathode.

Herein, the electron emission device using the cold cathode may include a field emitter array (FEA) type, a surface conduction emission (SCE) type, and a metal. Metal-Insulator-Metal (MIM, hereinafter referred to as MIM) type and Metal-Insulator-Semiconductor (MIS, hereinafter referred to as MIS) type are known.

The electron emission element is composed of driving electrodes for controlling electron emission of the electron emission portion together with the electron emission portion to emit electrons at the electron emission portion in accordance with a voltage applied to the driving electrodes, and the electron emission elements are arrayed on the first substrate. To form an electron emission device.

In addition, the electron emitting device is disposed on a second substrate having a light emitting unit comprising a fluorescent layer and an anode on one surface thereof, and is sealed with each other by a sealing member to form a vacuum container, thereby forming a vacuum layer with electrons emitted from the electron emitting device. Is excited to constitute an electron emission display device that performs a predetermined light emission or display action.

In the above-described conventional electron emission display device, the method of forming the vacuum container may be performed by the following process.

First, the first frit is applied to one surface of the second substrate and fired to bond the first frit to the second substrate, and the second frit is applied to one side of the glass frame and fired. 2 Stick the frit to one side of the glass frame. Then, the opposite side of the glass frame is aligned with the first frit of the second substrate and the firing is performed to bond the glass frame to the second substrate via the first frit, which consists of the first frit, the glass frame and the second frit. It constitutes a sealing member. Thereafter, the first substrate is aligned with the second substrate and firing is carried out to seal the first substrate and the second substrate via the second frit of the sealing member, and through the exhaust pipe provided to one of the two substrates. After exhausting the internal space, the exhaust pipe is sealed.

Here, the first frit and the second frit typically consist of an amorphous frit that is resoftened every time firing is performed to resoften by firing for sealing to seal the first substrate and the second substrate.

However, if the first frit and the second frit are softened by firing during sealing of the first substrate and the second substrate, the first substrate and the second substrate may flow, so that there is a high possibility of misalignment between the two substrates. In this case, a so-called abnormal light emission phenomenon occurs in which light emission occurs at an undesired place, which causes display quality degradation of the electron emission display device.

Accordingly, the present invention is to solve the conventional problems as described above, an object of the present invention is to provide a sealing member that can prevent misalignment between the two substrates during sealing.

Another object of the present invention is to provide an electron emission display device having the sealing member and a method of manufacturing the same.

In order to achieve the above object, the present invention, the first frit is disposed between the two substrates to seal the two substrates to each other, the glass frame, the first frit each bonded to one of the substrate and one of the substrates, And a second frit adhered to the opposite side of the glass frame and the other of the substrates, wherein the first frit and the second frit are made of amorphous or have different crystal states with different softening points. Provide the member.

Further, in order to achieve the above object, the present invention, the first substrate and the second substrate constituting the vacuum container, the electron emission unit provided on the first substrate, the light emitting unit provided on the second substrate, the first substrate and the second A sealing member disposed between the substrates, wherein the sealing member is bonded to the glass frame, one side of the glass frame and one of the substrates, respectively, and the other side of the substrate and the opposite side of the glass frame. According to an embodiment, there is provided an electron emission display device including a second frit adhered to a substrate, wherein the first frit and the second frit are formed in an amorphous form having different softening points or have different crystal states.

Furthermore, in order to achieve the above object, the present invention provides a first substrate provided with an electron emission unit, a second substrate provided with a light emitting unit, and a glass frame, respectively, and is prepared by coating and firing on one of the substrates. One frit is adhered, the second frit is adhered to one side of the glass frame by applying and firing, and the opposite side of the glass frame and the first substrate are adhered by firing through the first frit, A method of manufacturing an electron emitting display device comprising the steps of aligning one of the substrates and sealing the substrates with each other via a second frit by firing.

The first frit and the second frit of the sealing member may each have a softening point in the temperature range of 400 to 500 ° C.

Preferably, the first frit may have a softening point of 20 ° C. or more higher than the firing temperature at the time of sealing, and the second frit may have a softening point at the same temperature as the firing temperature at the time of sealing. In this case, the lead oxide content of the first frit may be about 60 wt% to 70 wt%, and the lead oxide content of the second frit may be about 70 wt% to 80 wt%.

In addition, the first frit may be in crystalline form and the second frit may be in amorphous form.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a cross-sectional view of an electron emission display device according to an exemplary embodiment, and FIGS. 2A and 2B are cross-sectional views illustrating structures formed on the first and second substrates of FIG. 1, respectively.

Referring to FIG. 1, an electron emission display device includes a first substrate 10 and a second substrate 20 that are disposed to be parallel to each other at predetermined intervals. The sealing member 300 is disposed at the edge of the first substrate 10 and the second substrate 20 to seal the two substrates, and the first substrate 10, the second substrate 20, and the sealing member 300 Configure the vacuum vessel.

On an opposite surface of the first substrate 10 to the second substrate 20, an electron emission unit 100 for emitting electrons toward the second substrate 20 is provided, and the first substrate of the second substrate 20 is provided. On the opposite side to (10), there is provided a light emitting unit 200 which emits visible light by the electrons to perform any light emission or display.

The sealing member 300 is provided with a glass frame 320, a first frit 310 disposed between the glass frame 320 and the second substrate 20 and adhered thereto, and the glass frame 320 and the first glass. The second frit 300 is disposed between the substrates 10 and adhered thereto.

Here, the first frit 310 and the second frit 330 may be formed in an amorphous form having different softening points in the temperature range of 400 to 500 ° C.

At this time, the amorphous frit has a lower softening point as the content of lead oxide (PbO) as a main component is higher, so that the first frit 310 and the second frit 330 have different softening points when the lead oxide content is controlled. Can be. For example, the first frit 310 may have a softening point higher than that of the second frit 330. Preferably, the first frit 310 has a softening point of about 470 ° C. higher than 20 ° C. higher than the firing temperature for sealing. The second frit 330 may have a softening point of about 450 ° C. equal to the firing temperature for sealing.

In this case, the first frit 310 may have a lead oxide content of about 60 wt% to 70 wt%, and the second frit 330 may have a lead oxide content of about 70 to 80 wt% lower than that of the first frit 310. Can have In this case, the first and second frits 310 and 330 may have a difference between components and component ratios by frit powder manufacturers, and the component ratio may have a difference between a PbO content and a PbTiO ₃ content.

As such, when the first frit 310 adhered to the second substrate 20 has a softening point higher than the firing temperature for sealing, the first frit 310 when the first substrate 10 and the second substrate 20 are sealed. The second substrate 20 can be fixed without being flown, thereby minimizing misalignment between the first substrate 10 and the second substrate 20.

On the other hand, the first frit 310 and the second frit 330 may have different crystal states. In one example, the first frit 310 may be made of a crystalline form, preferably ZnO—B ₂ O ₃ —SiO ₂ , and the second frit 330 may be made of an amorphous form, preferably PbO—B ₂ O ₃ . In this case, the first frit 310 is not softened during firing for sealing the first substrate 10 and the second substrate 20 so that the second substrate 20 may be fixed without flowing. Misalignment between 10) and the second substrate 20 can be minimized.

In the present exemplary embodiment, the first frit 310 is bonded to the second substrate 20 and the second frit 330 is bonded to the first substrate 10. The first substrate 10 may be bonded to the first substrate 10 and the second frit 330 may be attached to the second substrate 20. In this case, the first substrate 10 may not be fixed by the first frit 310. Can be.

Meanwhile, the electron emission unit 100 and the light emitting unit 200 provided on the first substrate 10 and the second substrate 20 may have a configuration as shown in FIGS. 2A and 2B, for example.

First, referring to FIG. 2A, the structure of the electron emission unit 100 is described. The cathode electrodes 110 are formed in a stripe pattern as a first electrode for controlling electron emission along one direction of the first substrate 10. The first insulating layer 120 is formed on the entire first substrate 10 over the cathode electrode 110, and the gate electrodes 130 are formed on the first insulating layer 120 as the second electrode. It is formed in a stripe pattern along the direction orthogonal to). In addition, at least one electron emission unit 140 is formed on the cathode electrode 110 in each region where the cathode electrode 110 and the gate electrode 130 cross each other, and the first insulating layer 120 and the gate electrode 130 are formed. Openings 120a and 130a corresponding to the electron emission parts 140 may be formed in the hole to expose the electron emission parts 140 on the first substrate 10.

Here, the electron emission unit 140 may be formed of materials that emit electrons when an electric field is applied in a vacuum, such as carbon-based materials or nanometer-sized materials, such as carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbons, C ₆₀ (fullerene), it may be made of any one selected from silicon nanowires or a combination thereof, the manufacturing method may be applied to screen printing, direct growth, chemical vapor deposition or sputtering.

In addition, one cathode electrode 110, one gate electrode 130, and the first insulating layer 120 and the electron emission unit 140 positioned at the intersection thereof form one electron emission element. These electron emitting devices form an array on the first substrate 10 to constitute the electron emitting device.

In the present embodiment, the structure in which the gate electrode 130 is positioned above the cathode electrode 110 with the first insulating layer 120 interposed therebetween, but the structure in which the cathode electrode is positioned above the gate electrode is also possible. The electron emission part may be formed on the first insulating layer while in contact with one side of the cathode electrode.

In addition, the second insulating layer 150 and the focusing electrode 160 may be sequentially formed on the gate electrode 130 on the first substrate 10. In this case, the second insulating layer 150 and the focusing electrode 160 are also provided with openings 150a and 160a for passing electron beams. For example, the openings 150a and 160a may be provided per electron emission element to focus the electrodes. 160 allows comprehensive collection of electrons emitted from one electron emitting device.

In this case, the focusing electrode 160 exhibits an excellent focusing effect as the height difference from the electron emission unit 140 increases, so that the thickness of the second insulating layer 150 is greater than the thickness of the first insulating layer 130. desirable.

In addition, the focusing electrode 160 may be formed of a conductive film coated on the second insulating layer 150 or may be formed of a metal plate having an opening 160a.

Next, referring to FIG. 2B, the structure of the light emitting unit 200 will be described. A fluorescent layer 210 and a black layer 220 are formed on the second substrate 20, and the fluorescent layer 210 and the black layer 220 are formed. The anode electrode 230 made of a metal such as aluminum is formed above. The anode electrode 230 receives a high voltage necessary for accelerating the electron beam from the outside, and reflects the visible light emitted toward the first substrate 10 among the visible light emitted from the fluorescent layer 210 to the second substrate 20 side of the screen. It increases the brightness.

In addition, the anode electrode 230 may be formed on one surface of the fluorescent layer 210 and the black layer 220 facing the second substrate 20. In this case, the anode electrode 230 may transmit visible light emitted from the fluorescent layer 210. So that the anode electrode is made of a transparent conductive material such as ITO.

On the other hand, the anode electrode 230 may have a structure in which both the metal thin film and the transparent conductive material are formed.

The fluorescent layer 210 may be disposed in a one-to-one correspondence to the electron emission device defined on the first substrate 10 or may be formed in a stripe pattern along the vertical direction of the screen, and the black layer 220 may be chromium or chromium oxide. It may be made of an opaque material such as.

In the above-described electron emission display device, the fluorescent layer 210 of the second substrate 20 is formed to correspond to the electron emission element of the first substrate 10, wherein one fluorescent layer 210 and one corresponding to each other are formed. The electron-emitting device forms a substantial pixel.

In the electron emission display device configured as described above, for example, a positive voltage of several hundred to several thousand volts is applied to the anode electrode 230, and a scan signal is applied to any one of the cathode electrode 110 and the gate electrode 130. At the same time, the data signal voltage is applied to the other electrode, and the focusing electrode 160 is driven by applying a negative voltage of several to several tens of volts.

Then, in the electron emission devices in which the voltage difference between the cathode electrode 110 and the gate electrode 130 is greater than or equal to a threshold, an electric field is formed around the electron emission unit 140 to emit electrons therefrom, and the emitted electrons are focused electrodes ( While passing through the opening 160a of the 160, the light is focused at the center of the electron beam bundle, attracted by the high voltage applied to the anode electrode 230, and collides with the fluorescent layer 210 to emit light.

In this process, in the electron emission display device of the present embodiment, the first substrate 10 and the second substrate 20 are correctly aligned and sealed by the sealing member 300, so that abnormal light emission does not occur.

The manufacturing method of the above-mentioned electron emission display device is demonstrated with reference to FIGS. 3A-3C.

Referring to FIG. 3A, each of the first substrate 10 (see FIG. 1) provided with the electron emission unit 100, the second substrate 20 provided with the light emitting unit 200, and the glass frame 320 (see FIG. 1), respectively. Prepare.

Next, the first frit 310 is applied to the edge of the second substrate 10 and baked to bond the first frit 310 to the second substrate 10.

The first frit 310 may be formed in an amorphous form having a softening point in the temperature range of 400 to 500 ° C. Preferably, the first frit 310 may have a softening point of about 470 ° C. that is 20 ° C. or more higher than the firing temperature for sealing, and the lead oxide content of the first frit 310 is 60 wt% to 70 wt%. May be enough.

Referring to FIG. 3B, the second frit 330 is coated on one side of the glass frame 320 and then fired to bond the second frit 330 to one side of the glass frame 320.

The second frit 330 may be formed in an amorphous form having a softening point lower than that of the first frit 310 in the temperature range of 400 to 500 ° C. Preferably, the first frit 310 may have a softening point of about 450 ° C. equal to the firing temperature for sealing, and the lead oxide content of the second frit 330 may be about 70 wt% to about 80 wt%.

Next, the opposite side of the glass frame 320 is aligned with the first frit 310 adhered to the second substrate 20 and fired, so that the glass frame 320 is opened via the first frit 310. While bonding to the second substrate 200, the sealing member 300 including the first frit 310, the glass frame 320, and the second frit 330 is formed.

Referring to FIG. 3C, the first substrate 10 is aligned with the second substrate 20 and calcined at a temperature of about 450 ° C. to allow the first substrate 10 to pass through the second frit 330 of the sealing member 300. The substrate 10 and the second substrate 20 are sealed. In this case, as the first frit 310 adhered to the second substrate 20 has a softening point higher than the fourth firing temperature, the first frit 310 is fired to seal the first substrate 10 and the second substrate 20. The frit 310 may fix the second substrate 20 without flowing, thereby minimizing misalignment between the first substrate 10 and the second substrate 20.

Thereafter, the internal space is exhausted through an exhaust pipe (not shown) provided on one of the two substrates, and the exhaust pipe is sealed to form a vacuum container.

In the present embodiment, only the method of manufacturing the electron emission display device when the first frit 310 and the second frit 330 have different softening points has been described. However, the first frit 310 and the second frit 330 are described. In the case where)) have different crystal states, the electron emission display device can be manufactured by the same method as described above.

In addition, in the present exemplary embodiment, the first frit 310 is adhered to the second substrate 20 and the second frit 330 is adhered to the second substrate 20. ) May be bonded to the first substrate 10 and the second frit 330 may be attached to the second substrate 20, in which case the first substrate 10 is not flown by the first frit 310. Can be fixed without.

In the above embodiment, the electron emission display device having the FEA type electron emission element has been described, but other types of electron emission display devices sealed by the sealing member to form a vacuum container, such as SCE type, MIM type and MIS type, etc. The present invention can also be applied to an electron emission display device having an electron emission element.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

As described above, the electron emission display device according to the present invention forms a vacuum container by sealing the first substrate and the second substrate through a sealing member made of a frit having different characteristics such as softening point or crystal state, and thus, the first substrate and the second substrate. When firing for sealing the substrate, one substrate may be fixed without flowing, thereby minimizing misalignment between the substrates.

In addition, in the case of the electron emission display device according to the present invention, it is also possible to further minimize the misalignment between the substrate by installing a separate auxiliary jig to prevent the flow of the substrate on the other substrate. .

Therefore, the electron emission display device according to the present invention can prevent the abnormal light emission phenomenon to improve the display quality.

Claims (18)

Disposed between two substrates to seal the two substrates with each other, Glass frames; A first frit adhered to one side of the glass frame and one of the substrates, respectively; And A second frit bonded to an opposite side of the glass frame and the other one of the substrates, respectively Including, The sealing member of the first frit and the second frit made of an amorphous form having different softening points or having different crystal states. According to claim 1, And the first frit and the second frit each have a softening point in the temperature range of 400 to 500 ° C. The method of claim 2, The sealing member of the said 1st frit has a softening point of the temperature 20 degreeC or more higher than the temperature at the said sealing, and the said 2nd frit has the softening point of the same temperature as the temperature at the said sealing. The method of claim 3, wherein The lead oxide content of the first frit is about 60wt% to 70wt%, the lead oxide content of the second frit is about 70wt% to 80wt%. The method of claim 2, And the first frit is in crystalline form and the second frit is in amorphous form. A first substrate and a second substrate constituting the vacuum container; An electron emission unit provided on the first substrate; A light emitting unit provided on the second substrate; A sealing member disposed between the first substrate and the second substrate, The sealing member Glass frames; A first frit adhered to one side of the glass frame and one of the substrates, respectively; And A second frit adhered to an opposite side of the glass frame and one of the substrates, respectively; And the first frit and the second frit are in an amorphous form having different softening points or have different crystal states. The method of claim 6, And each of the first frit and the second frit of the sealing member have a softening point in a temperature range of 400 to 500 ° C. The method of claim 7, wherein And the first frit has a softening point at a temperature of 20 ° C. or more higher than the temperature at the time of sealing, and the second frit has a softening point at the same temperature as the temperature at the time of sealing. The method of claim 8, The lead oxide content of the first frit is about 60wt% to 70wt%, and the lead oxide content of the second frit is about 70wt% to 80wt%. The method of claim 7, wherein And the first frit is crystalline and the second frit is amorphous. The method of claim 6, And an electron emission unit and electrodes for driving the electron emission unit. The method of claim 11, wherein The electron emission display device of claim 1, wherein the electron emission unit is one selected from carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbons, C ₆₀ (fullerenes), and silicon nanowires. The method of claim 6, And the light emitting unit comprises a fluorescent layer and an anode electrode. Preparing a first substrate provided with an electron emission unit, a second substrate provided with a light emitting unit, and a glass frame, respectively; Bonding the first frit to one of the substrates by application and firing; Bonding a second frit to one side of the glass frame by applying and firing; Bonding the first substrate to the opposite side of the glass frame by firing through the first frit; And Aligning one of the substrates with the one substrate and sealing the substrates with each other via the second frit by firing; Method of manufacturing an electron emission display device comprising a. The method of claim 14, And the first frit and the second frit each have a softening point in a temperature range of 400 to 500 ° C. The method of claim 15, And the first frit has a softening point of 20 ° C. or more higher than the firing temperature at the time of sealing and the second frit has a softening point at the same temperature as the firing temperature at the time of sealing. The method of claim 16, The lead oxide content of the first frit is about 60wt% to 70wt%, and the lead oxide content of the second frit is about 70wt% to 80wt%. The method of claim 15, And the first frit is in crystalline form and the second frit is in amorphous form.

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