KR20070105787A - Blank mask for smiconductor and manufacturing method thereof - Google Patents

Abstract

A blank mask for a semiconductor is provided to fabricate a binary or phase-shifted blank mask with reduced generation of defects by minimizing generation of defects in forming a thin film like a mask layer, an ARC(anti-reflective coating), a phase shift layer and the like. H2O in the surface of a transparent substrate(6) is removed by heating or oxygen plasma in a vacuum atmosphere. At least one thin film is stacked on the transparent substrate by using an inert ion source apparatus(3), a sub ion source apparatus(4) and an ion beam deposition apparatus including a target(5) wherein He gas is included in the sub ion source apparatus. A heat treatment is performed on the transparent substrate having the at least one thin film. At least one of Ar, N2, CO, CO2, N2O, NO, NO2, NH3, CH4 and F2 gas is used or not used in the transparent substrate. At least one of a hot plate, IR(infrared) irradiation and UV(ultraviolet) irradiation is selected. The heat treatment is performed under a vacuum or atmospheric pressure at a temperature of 80~250 °C and for a time interval of 0~120 minutes.

Description

Blank Mask for Semiconductor and Manufacturing Method Thereof {Blank Mask for Smiconductor and Manufacturing Method Thereof}

1 is a cross-sectional view schematically showing the ion beam lamination apparatus of the present invention.

Figure 2 is a schematic cross-sectional view showing one embodiment of blank mask manufacturing according to the present invention.

Figure 3 is a schematic cross-sectional view showing one embodiment of blank mask manufacturing according to the present invention.

4 is a chart showing the result of defect measurement of the blank mask according to the first embodiment and the second embodiment according to the present invention.

5 is a chart showing the measurement result of the substrate flatness of the blank mask according to the third embodiment of the present invention.

<Description of Symbols for Major Parts of Drawings>

1: vacuum chamber 2: vacuum pump

3: inert ion generating device 4: auxiliary ion generating device

5: target 6: transparent substrate

11: angle formed between the inert ion generating device and the target

12: angle between the target and the transparent substrate

13: Angle between the transparent substrate and the auxiliary ion generating device

21: transparent substrate 22: light shielding film

23: antireflection film 24: phase inversion film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a manufacturing method of a blank mask, which is a raw material for manufacturing a photomask used for manufacturing a semiconductor integrated circuit (LSI), a TFT-LCD, and the like. The manufacturing method of the blank mask for following.

In general, a semiconductor is manufactured using a lithography method, and a photomask on which a semiconductor pattern is formed is mounted on an exposure apparatus to reduce and transfer a pattern of the photomask onto a silicon wafer. Therefore, when a defect occurs in the photomask, the defect is transferred onto the silicon wafer as it is, causing a defect. Therefore, in order to increase the yield of semiconductor manufacturing, the defect of the photomask should be minimized, and the defect of the blank mask, the raw material, should be minimized. In particular, the Attenuated Phase Shift Mask (At-PSM) blank mask, which is in the spotlight in order to reduce the line width of the fine circuit pattern, has a very severe defect level, and the conventional binary mask (BIM) is also used. The defect level is getting very strict. In particular, the strong type phase reversal photomask manufactured by using a conventional binary blank mask and etching a transparent substrate is very difficult to inspect or correct defects during photomask fabrication, so the defect level of the blank mask is more important. Are becoming more and more strict.

Conventionally, a blank mask is formed on a transparent substrate by a reactive sputtering method using an inert gas and a reactive gas together with a direct current (DC) or an RF magnetron sputtering apparatus. A chromium (Cr) compound, a molybdenum silicide (MoSi) compound, etc. were laminated to form a thin film, and a photoresist was coated thereon. However, if reactive sputtering is used, there is a problem of generating defects such as many particles during sputtering by forming a compound by reacting a target with a reactive gas and causing minute abnormal discharge. .

In addition, the conventional blank mask has a problem in that the flatness of the substrate is increased during the photomask manufacturing process due to the internal stress of the thin film after the formation of a thin film of chromium compound or molybdenum silicide compound on the transparent substrate. If the flatness of the photomask substrate is increased, it causes the positional shift of the photomask pattern, which causes the positional defect of the pattern during semiconductor manufacturing through lithography.

It is an object of the present invention to provide a binary and phase inverted blank mask and a method of manufacturing the same, which have been created to solve the above problems and minimized defects.

In addition, another object of the present invention is to provide a binary and phase inverted blank mask and a method of manufacturing the same to minimize the change in flatness of the substrate.

Another object of the present invention is to provide a binary and phase inverted blank mask capable of producing a high-precision photomask and a method of manufacturing the same.

In order to achieve the above object, the present invention preferably forms the thin film by physical vapor deposition (Physical Vapor Deposition) method, Ion Beam Deposition (IBD) or Ion Assist Sputtering (Ion Assist Sputtering: More preferred is lamination using an apparatus called IAS). When the ion beam deposition apparatus and the ion assisted sputtering apparatus are used, no abnormal discharge (Arc) occurs during sputtering because the reactive gas does not react with the target, and thus there is no foreign matter such as particles.

In addition, in order to achieve the above object, the present invention, it is preferable that the defect level of the binary and phase inverted blank mask that can be used to manufacture high quality binary and phase inverted photomask is 0.5㎛ or less. In general, a lithography process for manufacturing a semiconductor is reduced exposure to one quarter or one fifth of the photomask pattern size. When the photomask defect is 0.5 μm or more, the defect is 0.1 to 0.12 μm in size on the silicon wafer. Appear and are not suitable for manufacturing high quality semiconductors.

In addition, in order to achieve the above object, the present invention preferably uses a mixture of helium (He) in an inert ion source device or an auxiliary ion source device to reduce the stress of the thin film. Helium (He), which is an inert gas, does not sputter and react with metal atoms of the target and the thin film because the atomic amount is smaller than that of the target and the thin metal atoms or the compound thereof. However, the use of helium in an inert ion source device stabilizes the inert ion source, and the use of helium gas in the auxiliary ion source device stabilizes reactive ions and the impact of helium on the thin film. Since it is possible to change the density of the thin film laminated by sputtering, there is an advantage that can be minimized by controlling the stress reduction of the thin film and the resulting flatness change of the substrate.

In addition, in order to achieve the above object, the present invention, it is preferable to sputter the thin film in the pressure range of 5.0 Pa 10-6 Torr to 5.0 Pa 10-4 Torr, 1.0 Pa 10-5 Torr to 1.0 Pa 10-4 Torr It is more preferable to sputter the thin film in the pressure range of. Sputtering at a pressure range of 5.0 ㅧ 10-6 Torr or less causes the density of inert gas ions to be so low that the deposition rate decreases and the density of the thin film increases to give compressive stress, resulting in flatness of the substrate. To increase. In addition, when the thin film is sputtered in the pressure range of 5.0 ㅧ 10-4 Torr or higher, the thin film is subjected to tensile stress, which also increases the flatness of the substrate and also removes foreign substances such as particles by the flow of inert gas and reactive gas. By moving, the probability of defects is increased.

In order to achieve the above object, the present invention provides an angle between a horizontal direction of an inert ion source device and a target, an angle between a line connecting the center point of the target and the center point of the substrate and the horizontal direction of the substrate, and a transparent ion source device. It is preferable that the angle formed by the horizontal direction of the substrate is 40 degrees to 85 degrees. In FIG. 1, an ion beam deposition apparatus is schematically illustrated. When the angle is 40 degrees or less, the thin film stacking speed is too slow, and the stacked thin films have a tensile stress, thereby increasing the flatness of the substrate. On the other hand, when each angle is more than 85 degrees, the stacking speed is reduced, it becomes very difficult to control the uniformity (uniformity) of the thin film, and the laminated thin film has a compressive stress, which also increases the flatness of the substrate. In order to manufacture high quality binary and phase inversion blank masks, it is more preferable that the thickness of the thin film and the uniformity of the thin film properties are included within ㅁ 2%.

In order to achieve the above object, the present invention, cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), Titanium (Ti), Niobium (Nb), Zinc (Zn), Hafnium (Hf), Germanium (Ge), Aluminum (Al), Platinum (Pt), Manganese (Mn), Iron (Fe), Silicon (Si) Nickel (Ni), cadmium (Cd), zirconium (Zr), magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), Indium Tin Oxide (ITO), etc. It is preferable to select and use the target containing at least 1 sort (s) from the group which consists of.

In addition, the present invention, oxygen (O), nitrogen (N), carbon (C), fluorine (F) component in a thin film laminated by ionizing a reactive gas using an auxiliary ion generating device to achieve the above object It is preferable to laminate a thin film of desired characteristics by including. For this purpose, the secondary ion generator is equipped with oxygen (O2), nitrogen (N2), carbon monoxide (CO), carbon dioxide (CO2), nitrous oxide (N2O), nitrogen oxides (NO), nitrogen dioxide (NO2), ammonia (NH3) and methane. (CH4), fluorine (F2) gas, and the like can be used. In addition, it is possible to use one or more reactive gases containing an element contained in the thin film. It is also possible to use a mixture with an inert gas.

In addition, in order to achieve the above object, the present invention, the inert ion source device, inert gas such as helium (He), argon (Ar), neon (Ne), krypton (Kr), xetone (Xe) alone Alternatively, it is preferable to use a mixture of two or more kinds, and xetone (Xe) is more preferable in consideration of the lamination rate and the stress of the thin film.

In addition, in order to achieve the above object, the present invention it is possible to include an inert gas, such as argon, neon, krypton, xenon inert gas in the auxiliary ion source device. The inert gas does not react with the thin film even if it is ions, and is generally used as a sputtering gas. However, when the kinetic energy of the inert gas is low, there is an atomic compacting effect that increases the density of the thin film without sputtering. Therefore, if the flow rate of the inert gas included in the auxiliary ion source and the applied power are properly adjusted, the stress of the thin film is reduced. And there is an advantage that can adjust the flatness of the substrate.

In addition, in order to achieve the above object, the present invention preferably exposes the surface of the transparent substrate to the plasma ionized oxygen (O2) prior to sputtering for 0 to 60 minutes or to heat the transparent substrate to 80 to 250 ℃. The surface of the transparent substrate is attached to the organic adsorbate and moisture (H 2 O) when exposed to the atmosphere, the attached organic adsorbate and moisture (H 2 O) is weakening the adhesion of the thin film has an adverse effect on the properties of the thin film. The cleaning of the transparent substrate by oxygen plasma is ineffective when it is 60 minutes or more, and when the heating temperature of the transparent substrate is 80 ° C. or less, the attached moisture is not removed well. It becomes bigger.

In addition, in order to achieve the above object, the present invention preferably heat-treat the transparent substrate on which the thin film is formed after sputtering at a temperature of 80 to 500 ° C. for 0 to 120 minutes at a pressure controlled vacuum or atmospheric pressure or atmospheric pressure or higher. Since the deposition of the thin film by sputtering is in an amorphous state, even if the sputtering conditions of the ion beam deposition apparatus are well controlled, the stress remains in the thin film, and the residual stress causes a change in the flatness of the substrate during the photomask manufacturing process. The gas atmosphere during heat treatment can be used alone or in combination of two or more reactive gases containing inert gas or oxygen (O), nitrogen (N), carbon (C), fluorine (F) to control the physical properties of the surface. More preferably, it is carried out in a vacuum atmosphere lower than atmospheric pressure. In addition, the heating method may be a contact method, but it is more preferable to heat the non-contact method using an infrared or ultraviolet heater. When the heat treatment at a temperature of 80 ℃ or less, the effect of the thin film stress reduction by the heat treatment is small, and when the heat treatment at a temperature of 500 ℃ or more increases the roughness of the surface of the thin film by recrystallization of the thin film. If the surface roughness of the thin film becomes large, the line edge roughness in manufacturing the photomask is increased to reduce the quality of the binary and phase reversal photomask, so it is controlled by the root mean square of 0.1 to 3 nm. It is desirable to be.

In the present invention, it is possible to use quartz glass, fluorine-doped quartz glass, sapphire or the like, and any transparent substrate having a transmittance of 50% or more at a wavelength of 250 nm or less may be used.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(Example 1)

FIG. 1 schematically shows a cross section of an ion beam deposition apparatus used in the present invention, and FIG. 2 shows a blank mask according to the first embodiment.

Referring to the drawings, two layers of thin films are laminated on the transparent substrate 6 using the ion beam deposition apparatus shown in FIG. The present inventor first adjusts the angles of the inert ion source generator 3, the target 5, the transparent substrate 6 and the auxiliary ion source generator 4, so that the thickness uniformity of the thin film deposited is 2% or less in plane. Adjusted to At this time, the angle 11 between the inert ion source device and the target, the angle 12 between the target and the substrate, and the angle 13 between the auxiliary ion source generator and the substrate were 60 to 80 degrees, respectively. The vacuum pump 2 is then operated to maintain ultra high vacuum in the vacuum chamber 1. Next, a 6025 (6 inches by 0.25 inch thick) transparent substrate 6 was mounted. Next, an oxygen plasma (O 2 plasma) was generated and plasma cleaning was performed to remove moisture and organics on the surface of the substrate for 5 minutes.

Then, the target was used as chromium (Cr), and the inert ion source generator 3 and the auxiliary ion generator 4 were operated to laminate the light shielding film 22 of chromium carbide nitride (CrCN) to a thickness of 50 nm. At this time, 30 to 100% of xenon (Xe) gas and 0 to 70% of helium (He) gas were used for the inert ion source generator 3, and 100 to 500 W was used for the power. In addition, the auxiliary ion source generator 4 includes 0 to 30% of argon (Ar) gas, 30 to 100% of nitrogen (N2) gas, 0 to 70% of helium (He) gas, and 0 to 30% of methane (CH4) gas. Used and power was used from 10 to 50W. At this time, the degree of vacuum was maintained at 1 ㅧ 10-4 Torr. Then, an antireflection film 23 of chromium carbide oxynitride (CrCON) was laminated to a thickness of 15 nm. At this time, 30 to 100% of xenon (Xe) gas and 0 to 70% of helium (He) gas were used for the inert ion source generator 3, and 100 to 300W of power was used. In addition, the auxiliary ion source generator 4 includes argon (Ar) gas 0 to 30%, nitrogen (N2) gas 30% to 90%, helium (He) gas 0 to 70%, carbon dioxide (CO2) gas 5 to 40% The power was used from 10 to 50W. At this time, the degree of vacuum was maintained at 5 ㅧ 10-5 Torr. The film was then heated to 350 ° C. for 20 minutes in an vacuum atmosphere to anneal the thin film to remove residual stress.

2 is a cross-sectional view of the light shielding film 22 and the anti-reflection film 23 laminated by the above method. After the light shielding film 22 and the anti-reflection film 23 have been cleaned, defects of particles and pinholes are measured using a defect inspection apparatus, and are shown in FIG. 3. For comparison, defect inspection results of the light-shielding film 22 and the anti-reflection film 23 stacked by the conventional DC magnettron sputtering method are shown in Comparative Example 1, and as shown in FIG. The defects of the light-shielding film 22 and the anti-reflection film 23 produced by the present invention were extremely small, and in particular, particle and pinhole defects larger than a large size defined as 0.5 to 1.0 μm were not found.

The thin film composed of the chromium (Cr) compound was measured by AES (Auger Electron Spectroscopy) analysis, and in the case of the light shielding film 22, chromium (Cr) 40 to 70%, carbon (C) 5 to 20%, and nitrogen (N) Measured from 15 to 45%. In addition, the anti-reflection film 23 was measured to be 35 to 60 %% of chromium (Cr), 5 to 20% of carbon (C), 15 to 50% of oxygen (O), and 15 to 40% of nitrogen (N).

A blank mask was manufactured by coating a photoresist on the light shielding film 22 and the anti-reflection film 23 laminated according to the first embodiment. Then, a strong type phase reversal photomask was manufactured using the blank mask, and no problem was found when manufacturing the photomask. As a result of pattern inspection, a blank mask manufactured by a conventional method was used. The light shielding film 22 and the antireflection film 23 had extremely few defects due to particles and foreign matter.

(Example 2)

3 is a cross-sectional view of an attenuated phase inversion blank mask according to a second embodiment of the present invention.

Referring to the drawings, first, a phase inversion film 24 of molybdenum silicide carbide nitride (MoSiCN) was laminated using a molybdenum silicide (MoSi) target on the transparent substrate 21. At this time, the same ion beam deposition apparatus as that of the first embodiment was used, and surface cleaning by oxygen plasma was performed in the same manner before the phase inversion film 24 was laminated. 30 to 100% of xenon (Xe) gas and 0 to 70% of helium (He) gas were used for the inert ion source generator 3, and 100 to 500W of power was used.

In addition, the auxiliary ion source generator 4 includes argon (Ar) gas 0 to 30%, nitrogen (N2) gas 30% to 90%, helium (He) gas 0 to 70%, methane (CH4) gas 0 to 20% And power was used from 10 to 50W. At this time, the degree of vacuum was maintained at 5 ㅧ 10-5 Torr. After the phase inversion film 24 was cleaned by the above method, particles were measured using a defect inspection apparatus, and are shown in FIG. 4. For comparison, the defect inspection results of the phase inversion film 24 manufactured by the conventional DC magnetron sputtering method are shown in Comparative Example 2, and as shown in FIG. 4, the phase inversion film 24 manufactured by the second embodiment is shown. ) Very few particles were found, especially no particles larger than Large size. From the above results, the defect level was improved when the ion beam deposition apparatus was used not only for the light shielding film 22 and the antireflection film 23 of the chromium (Cr) compound but also the phase inversion film 24.

Then, the light shielding film 22 and the antireflection film 23 were laminated in the same manner as in Example 1, and a photoresist was coated to prepare an attenuated phase inversion blank mask. An attenuated phase inversion photomask was fabricated using the attenuated phase inversion blank mask prepared by the second embodiment. No problem was found in the photomask fabrication process. As a result of defect inspection of the pattern, defects due to the blank mask were extremely smaller than that of the attenuated phase inverted blank mask manufactured by the conventional method.

(Example 3)

FIG. 5 illustrates a change in the flatness of the transparent substrate 21 before and after lamination of the light shielding film 22 and the anti-reflection film 23 according to the third embodiment of the present invention.

Referring to the drawings, the light shielding film 22 and the antireflection film 23 were formed in the same manner as in the first embodiment of the present invention. At this time, as shown in FIG. 5, the ratio was adjusted to measure the change in flatness according to the ratio of argon (Ar) gas and helium (He) gas introduced into the auxiliary ion generating device 4. Accordingly, the ratio and pressure of nitrogen (N 2) gas, methane (CH 4) gas, and carbon dioxide (CO 2) gas within the gas range described in the first embodiment so that the characteristics of the light shielding film 22 and the anti-reflection film 23 do not change. Was adjusted appropriately. For the flatness change, the flatness of the 6025 transparent substrate 21 was measured using a commercially available flatness measuring device, and then the light shielding film 22 and the anti-reflection film 23 were laminated.

Then, the flatness of the transparent substrate 21 on which the light shielding film 22 and the anti-reflection film 23 were laminated was measured, and the change in the flatness of the transparent substrate 21 was calculated.

In FIG. 5, a negative sign (−) indicates that compressive stress is applied to the laminated thin film and changes the transparent substrate 21 into a convex shape. In addition, a positive sign (+) indicates that a tensile stress acts on the laminated thin film and changes the transparent substrate 21 into a concave shape. As shown in FIG. 5, it can be seen that as the ratio of helium gas increases, tensile stress acts on the thin film, and the light shielding film 22 and the anti-reflection film 23 are laminated as in the first embodiment using the above result. And a heat mask and a photoresist were coated to prepare a blank mask.

The flatness of the light shielding film 22 and the anti-reflection film 23 was used as a transparent substrate 21 having a flatness of 0.24 μm. The flatness of the manufactured blank mask was measured, and the flatness was measured to be 0.27 μm. It was good without.

Since the blank mask manufactured by the third embodiment has a flatness of 0.5 µm or less, it has been found to be suitable not only for manufacturing a conventional binary photomask but also for producing a strong type phase inversion photomask. It is also possible to produce an attenuated phase inversion blank mask using the same method and to have a flatness of 0.5 mu m or less. In addition, AES was measured to analyze whether the helium (He) gas is included in the light shielding film 22 or the antireflection film 23, but the helium (He) component was not detected, and TDS (Thermal Desorption Spectroscopy) analysis was performed. However, no significant level of helium (He) was detected above 5 ㅧ 10-9.

Since argon (Ar) and helium (He) gas was confirmed to affect the internal stress of the thin film, the average square roughness (RMS Roughness) of the thin film was measured using AFM (Atomic Force Microscope). It was measured and found to be extremely good. As a result of measuring a line edge roughness by using a blank mask manufactured by the method of the third embodiment, a strong phase reversal photomask was measured and measured to be 3 nm or less, which is much better than that of the conventional method. The result was obtained.

As described above, the blank mask of the present invention provides the following effects.

First, defects are minimized when forming thin films such as light blocking films, antireflection films, and phase inversion films, and thus, binary and phase inverted blank masks having a very small number of defects in photomask manufacturing can be manufactured.

Second, since the internal stress of the thin film can be lowered, there is an effect of manufacturing a high quality blank mask in which the flatness variation of the transparent substrate is minimized.

Third, even after the manufacture of the binary and phase reversal photomasks, there is an effect of minimizing the change in the flatness of the substrate and manufacturing a blank mask capable of manufacturing a high-quality photomask having a small line edge roughness.

It is to be understood that the invention is not limited to that described above and illustrated in the drawings and that many more modifications and variations are possible within the scope of the following claims. For example, in addition to the binary and phase inverted blank masks described in the above embodiments, it can be used to produce blank masks for extreme ultraviolet (EUV) lithography, X-ray lithography, and electron beam (E-Beam) lithography.

Claims (6)

In the blank mask which is a raw material of a semiconductor photomask, Removing the water (H 2 O) on the surface of the transparent substrate by heating or vacuum (O 2) plasma in a transparent substrate; One or more thin films are stacked on the transparent substrate by using an ion beam deposition device including an inert ion source device, an auxiliary ion source device, and a target, and the auxiliary ion source device includes helium gas. Process; And a step of heat-treating the transparent substrate on which the at least one thin film is laminated. The method of claim 1, The pressure of the ion beam stacking device is maintained at 5 × 10 -6 to 5 × 10 -4 Torr. The method of claim 1, The angle between the center point of the inert ion generating device and the target in the ion beam deposition apparatus, the angle between the center point of the target and the transparent substrate, and the angle between the center point of the transparent substrate and the auxiliary ion generating device is 40 to 85 degrees. Make up; Method for manufacturing a binary or phase inverted blank mask, characterized in that the thickness uniformity of the thin film is included within ㅁ 2%. The method of claim 1, The target is cobalt (Co), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr), vanadium (V), palladium (Pd), titanium (Ti), niobium (Nb), zinc ( Zn), hafnium (Hf), germanium (Ge), aluminum (Al), platinum (Pt), manganese (Mn), iron (Fe), silicon (Si) nickel (Ni), cadmium (Cd), zirconium (Zr ), Magnesium (Mg), lithium (Li), selenium (Se), copper (Cu), yttrium (Y), sulfur (S), indium (In), tin (Sn), indium tin oxide: And at least one containing at least one ITO); The gas introduced into the inert ion generating device is an inert gas used by combining one or two or more of helium (He), argon (Ar), neon (Ne), krypton (Kr), and xenon (Xe) gas. ; Reactive gases introduced into the auxiliary ion generator include oxygen (O 2), nitrogen (N 2), carbon monoxide (CO), carbon dioxide (CO 2), nitrous oxide (N 2 O), nitrogen oxides (NO), nitrogen dioxide (NO 2), and ammonia ( At least one of NH3), methane (CH4) and fluorine (F2) is used with the helium (He) gas; Binary characterized by including at least one of the target element and oxygen (O), nitrogen (N), carbon (C), fluorine (F) components in the thin film and helium (He) components 1% or more Or a method of manufacturing a phase inversion blank mask. The method of claim 1, Argon (Ar), oxygen (O2), nitrogen (N2), carbon monoxide (CO), carbon dioxide (CO2), nitrous oxide (N2O), nitrogen oxides (NO), nitrogen dioxide (NO2), Use one or more of ammonia (NH 3), methane (CH 4), and fluorine (F 2) gases; One or more of hot plate, infrared irradiation, and ultraviolet irradiation methods are selected and used; Method of manufacturing a binary or phase inverted blank mask, characterized in that the heat-treated for 0 to 120 minutes in a temperature range of 80 to 250 ℃ at a vacuum or atmospheric pressure. It is manufactured by the manufacturing method in any one of Claims 1-5, The blank mask characterized by the above-mentioned.

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