KR20070091966A - Display device and manufacturing method thereof - Google Patents

Abstract

A display device and a manufacturing method thereof are provided to form an organic semiconductor layer on a channel area and minimize damage of characteristics of the organic semiconductor layer or prevent impurities from flowing into the organic semiconductor layer having weak chemical resistance and plasma resistance. A display device comprises the followings: an insulation substrate; a data line(121) formed on the insulation substrate; a first insulation layer covering the data line; a gate line(141) which is formed on the first insulation layer and includes a gate electrode(143); a second insulation layer which covers the gate line and where an uneven pattern is formed in at least one area; a transparent electrode layer for defining a channel area by being inter-separated on the second insulation layer on the gate electrode; a reflection layer(170) formed in an area of the transparent electrode layer; and an organic semiconductor layer(175) formed in the channel area.

Description

DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF}

1 is a layout view of a thin film transistor substrate according to a first embodiment of the present invention;

2 is a cross-sectional view taken along II-II of FIG. 1;

3A through 7B are cross-sectional views sequentially illustrating a method of manufacturing a display device according to a first embodiment of the present invention;

8 is a cross-sectional view of a thin film transistor substrate according to a second embodiment of the present invention.

 Explanation of Signs of Major Parts of Drawings

100: thin film transistor substrate 110: insulating substrate

121: data line 123: data pad

130: first insulating film 131: first insulating film contact hole

141: gate line 143: gate electrode

145: gate pad 147: connecting member

149 sustain electrode line 150 second insulating film

151: contact member contact hole 153: data pad contact hole

155: gate pad contact hole 157: uneven pattern

161: source electrode 163: drain electrode

165: pixel electrode 170: reflective layer

175: organic semiconductor layer 181: first protective layer

182: second protective layer 190: low temperature organic film

The present invention relates to a display device and a method for manufacturing the same, and more particularly, to a semi-transmissive or reflective display device having an organic thin film transistor and a method for manufacturing the same.

Recently, liquid crystal displays (LCDs), which have advantages of small size and light weight, have been in the spotlight. A liquid crystal display device generally includes a liquid crystal panel and a light source positioned behind the liquid crystal panel.

The liquid crystal panel includes a thin film transistor substrate provided with a thin film transistor (TFT). The thin film transistor includes a gate electrode, a source electrode and a drain electrode which are separated from each other around the gate electrode to define a channel region, and a semiconductor layer positioned in the channel region. Generally, amorphous silicon or polysilicon is used for the semiconductor layer. Recently, application of organic semiconductors is progressing. Since organic semiconductor (OSC) can be formed at room temperature and normal pressure, the process cost can be reduced and it can be applied to plastic substrates that are weak to heat.

The liquid crystal display may be classified into a transmissive type, a transflective type, and a reflective type according to the shape of a light source located behind the liquid crystal panel. In the transmissive type, a backlight unit is disposed on a rear surface of the liquid crystal panel, and light from the backlight unit is transmitted through the liquid crystal panel. The reflection type uses natural light and can reduce power consumption by limiting the use of the backlight unit, which occupies 70% of the power consumption. The transflective liquid crystal display device utilizes the advantages of the transmissive and reflective liquid crystal display device. By using natural light and a backlight unit, the transflective liquid crystal display device can secure appropriate luminance according to the use environment regardless of the change in ambient light intensity.

Accordingly, an object of the present invention is to provide a transflective or reflective display device having an organic thin film transistor and a method of manufacturing the same.

The object is, in accordance with the present invention, an insulating substrate; A data wiring formed on the insulating substrate; A first insulating film covering the data wirings; A gate wiring formed on the first insulating film and including a gate electrode; A second insulating film covering the gate wiring and having an uneven pattern formed in at least one region; A transparent electrode layer separated from each other on the second insulating layer on the gate electrode to define a channel region; A reflection layer formed in one region of the transparent electrode layer; A display device comprising an organic semiconductor layer formed in a channel region is achieved.

Here, the data wiring includes a data line and a data pad provided at an end of the data line, and the gate wiring includes a gate line defining a pixel region crossing the data line, a gate pad provided at an end of the gate line, and between the gate line and the gate electrode. The display device may further include a storage electrode line spaced apart from the connecting member and the gate line positioned along the gate line.

The transparent electrode layer may include a source electrode interconnecting the connection member and the organic semiconductor layer, a drain electrode separated from the source electrode with the organic semiconductor layer interposed therebetween, and a pixel electrode connected to the drain electrode to fill the pixel region. Can be.

In addition, the transparent electrode layer may include any one of indium tin oxide (ITO) and indium zinc oxide (IZO).

Here, the first insulating film includes an inorganic film, and a first insulating film contact hole for exposing a part of the data line is formed; The second insulating film includes an organic film, and a second insulating film contact hole for exposing a part of the connection member is formed; The connection member may be connected to the data line through the first insulating layer contact hole, and may be connected to the pixel electrode through the second insulating layer contact hole.

An object of the present invention, the insulating substrate; A data line formed on the insulating substrate and including a light blocking film; A first insulating film covering the data wirings; A source electrode and a drain electrode separated from each other on the first insulating film on the light blocking film to define a channel region; A second insulating film having an opening exposing the channel region and having an uneven pattern formed in at least one region; A pixel electrode formed on the second insulating film; A reflection layer formed in one region of the uneven pattern; It may include an organic semiconductor layer formed in the opening.

Here, an organic insulating film formed on the organic semiconductor layer; The semiconductor device may further include a gate wiring having a gate electrode formed on the organic insulating film.

The first insulating film includes an inorganic film, a first insulating film contact hole for exposing a part of the data line is formed, and the second insulating film includes an organic film, and a drain contact hole for exposing a part of the drain electrode is formed. The pixel electrode may be connected to the drain electrode through the drain contact hole.

An object of the present invention is to form a data wiring on an insulating substrate; Forming a first insulating film to cover the data wirings; Forming a gate wiring having a gate electrode on the first insulating film; Forming a second insulating film on the gate wiring; Forming an uneven pattern in at least one region of the second insulating film; Forming a transparent electrode layer on the second insulating layer on the gate electrode with the gate electrode separated from each other to define a channel region; Forming a reflective layer in one region on the transparent electrode layer; It is achieved by a method for manufacturing a display device comprising the step of forming an organic semiconductor layer in the channel region.

An object of the present invention is to form a data wiring having a light blocking film on an insulating substrate; Forming a first insulating film to cover the data wirings; Forming a source electrode and a drain electrode on the first insulating layer, the source and drain electrodes being separated from each other with the light blocking layer interposed therebetween to define a channel region; Forming a second insulating film having an opening exposing a channel region on the source electrode and the drain electrode; Forming an uneven pattern in at least one region of the second insulating film; Forming a pixel electrode on the second insulating film; Forming a reflective layer on one region of the pixel electrode; The method may include forming an organic semiconductor layer in the opening.

Here, the organic semiconductor layer may be formed by any one of an evaporation method and an inkjet method.

The uneven pattern may be formed using any one of a slit mask and a half tone mask.

The forming of the uneven pattern may include: arranging a mold having a pattern corresponding to the uneven pattern on the second insulating layer; And pressing the mold toward the insulating substrate to form the uneven pattern on the second insulating layer.

Hereinafter, with reference to the accompanying drawings will be described in more detail with respect to the present invention. In the following, a film is formed (located) on the other layer, not only when two films are in contact with each other but also when another film is between two layers. It also includes the case where it exists.

1 is a schematic layout view of a thin film transistor substrate according to a first exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along II-II of FIG. 1.

The thin film transistor substrate 100 according to the present invention may be formed of an insulating substrate 110, data wirings 121 and 123 formed on the insulating substrate 110, and first and second wirings formed on the data wirings 121 and 123. 1 insulating film 130, gate wirings 141, 143, 145, 147, 149 formed on first insulating film 130, and gate wirings 141, 143, 145, 147, 149 are formed on A second insulating film 150 having at least one uneven pattern 157 formed therein, a transparent electrode layer 161, 163, 165, 167, and 169 formed on the second insulating film 150, and the transparent layer. The second insulating layer 150 is in contact with the reflective layer 170 formed in one region of the equatorial region of the electrode layers 161, 163, 165, 167, and 169 and a portion of the transparent electrode layers 161, 163, 165, 167, and 169. ) And the first and second passivation layers 181 and 182 sequentially formed on the organic semiconductor layer 175 and the organic semiconductor layer 175.

The insulating substrate 110 may be made of glass or plastic. When the insulating substrate 110 is made of plastic, there is an advantage that flexibility can be given to the thin film transistor substrate 100. When the organic semiconductor layer 175 is used as in the present invention, since the semiconductor layer may be formed at room temperature and atmospheric pressure, the insulating substrate 110 made of a plastic material may be easily used.

The data wires 121 and 123 are formed on the insulating substrate 110. The data lines 121 and 123 are provided at the data line 121 extending in one direction on the insulating substrate 110 and at the end of the data line 121 to receive driving or control signals from the outside. It includes. The material of the data lines 121 and 123 may include at least one of Al, Cr, Mo, Nd, Au, Pt, and Pd, and may be provided as a single layer or a plurality of layers.

The first insulating layer 130 covers the data lines 121 and 123 on the insulating substrate 110. The first insulating layer 130 is a layer for electrical insulation between the data lines 121 and 123 and the gate lines 141, 143, 145, 147 and 149, and has excellent processability, such as silicon nitride (SiNx) or silicon oxide (SiOx). It may be an inorganic film made of the same inorganic material. The first insulating layer 130 includes a first insulating layer contact hole 131 exposing the data line 121. Although not illustrated, the first insulating layer 130 may be a double layer including an inorganic layer and an organic layer. In addition, the first insulating layer 130 remains in the gap or the interface of the first insulating layer contact hole 131 to be described later due to the remaining chemicals or plasma used in the formation of the data lines 121 and 123. Minimize damage to the characteristics of the organic semiconductor layer 175 to be described later that is vulnerable to the sex.

Gate lines 141, 143, 145, 147, and 149 are formed on the first insulating layer 130. The gate wirings 141, 143, 145, 147, and 149 are provided at the end of the gate line 141 and the gate line 141 that are insulated from and intersect the data line 121 and define the pixel region, and are driven from the outside. Or a gate pad 145 receiving a control signal, a gate electrode 143 formed in a branch of the gate line 141 and corresponding to the organic semiconductor layer 175 to be described later, and a first insulating film contact hole 131. And a connection member 147 connected to the data line 121 and a storage low electrode line 149 spaced apart from the gate line 141 along the gate line 141. The gate pad 145 receives a driving and control signal for turning on / off the thin film transistor from the outside and transfers the driving signal to the gate electrode 143 through the gate line 141. The connection member 147 connects the data line 121 and the source electrode 161. The storage electrode line 149 forms a storage capacity together with the second insulating layer 150 and the pixel electrode 165. Like the data lines 121 and 123, the gate lines 141, 143, 145, 147, and 149 may also include at least one of Al, Cr, Mo, Nd, Au, Pt, and Pd. It may be provided in a plurality of layers.

The second insulating layer 150 is formed on the gate lines 141, 143, 145, 147, and 149. The second insulating layer 150 is an organic layer, which protects the gate wirings 141, 143, 145, 147, and 149, and simultaneously introduces impurities into the organic semiconductor layer 175 having poor chemical resistance and plasma resistance. prevent. The second insulating layer 150 includes a connection member contact hole 151 exposing a part of the connection member 147, a data pad contact hole 153 exposing a part of the data pad 123, and a part of the gate pad 145. A gate pad contact hole 155 is formed to expose the gap. The uneven pattern 157 is formed on the surface of the second insulating film 150. The uneven pattern 157 is used to induce diffuse reflection or scattering of light in the reflective layer 170 to be described later, and to increase light reflection efficiency. The uneven pattern 157 may be formed on the entire surface of the second insulating layer 150, or may be formed only in a region corresponding to the reflective layer 170.

Transparent electrode layers 161, 163, 165, 167, and 169 are formed on the second insulating layer 150. The transparent electrode layers 161, 163, 165, 167, and 169 are connected to the data line 121 through the connection member contact holes 151 and at least partially contact the organic semiconductor layer 175 with the source electrode 161 and the organic layer. A drain electrode 163 separated from the source electrode 161 with the semiconductor layer 175 therebetween, and a pixel electrode 165 connected to the drain electrode 163 and formed in the pixel region. The apparatus further includes a data pad contact member 167 and a gate pad contact member 169 covering the data pad contact hole 155 and the gate pad contact hole 157, respectively. The transparent electrode layers 161, 163, 165, 167, and 169 are made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). The source electrode 161 is physically and electrically connected to the data line 121 through the connection member contact hole 151 to receive an image signal. The drain electrode 163 spaced apart from the source electrode 161 with the gate electrode 143 interposed therebetween forms a thin film transistor (TFT) together with the source electrode 161 and each pixel electrode 165. Acts as a switching and driving element to control and drive the operation.

The reflective layer 170 is formed on the pixel electrode 165. The pixel region formed by the data line 121 and the gate line 141 is divided into a transmissive region in which the reflective layer 170 is not formed and a reflective region in which the reflective layer 170 is formed. It is called a transflective liquid crystal display device. In the transmissive region where the reflective layer 170 is not formed, light from the backlight unit (not shown) passes through the liquid crystal panel, and in the reflective region where the reflective layer 170 is formed, light from the outside is reflected and the liquid crystal panel is reflected again. Is surveyed out. Aluminum or silver is mainly used for the reflective layer 170. In some cases, a double layer of aluminum / molybdenum may be used.

Although not shown, when the reflective layer 170 is formed on the entire surface of the pixel area, the reflective liquid crystal display device becomes a reflective liquid crystal display device.

An organic semiconductor layer 175 is formed in the channel region. The organic semiconductor layer 175 covers the channel region and at least partially contacts the source electrode 161 and the drain electrode 163. As the organic semiconductor layer 170, a known organic semiconductor material such as pentacene may be used.

The first protective layer 181 and the second protective layer 182 for protecting the organic semiconductor layer 175 are formed on the organic semiconductor layer 175. In addition, a low temperature organic layer 190 may be further formed to cover the connection member contact hole 151 to the organic semiconductor layer 175.

Hereinafter, a method of manufacturing a display device including an organic thin film transistor (O-TFT) according to a first embodiment of the present invention will be described with reference to FIGS. 3A to 6B.

First, as shown in FIGS. 3A and 3B, an insulating substrate 110 made of an insulating material such as glass, quartz, ceramic, or plastic is prepared. In manufacturing a flexible display device, it is preferable to use a plastic substrate. Thereafter, the data wiring material is deposited on the insulating substrate 110 by sputtering or the like, and then the data provided at the end of the data line 121 and the data line 121 through a photolithography process. The pad 123 is formed. Subsequently, a first insulating material made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) is applied on the insulating substrate 110 and the data lines 121 and 123 to form the first insulating layer 130. A first insulating film contact hole 131 exposing the data line 121 is formed.

Next, as illustrated in FIGS. 4A and 4B, the data line material is deposited on the first insulating layer 130 by sputtering or the like, and then the gate line 141 is formed through a photolithography process. The gate electrode 143, the gate pad 145, the connection member 147, and the storage electrode line 149 are formed. The gate line 141 is insulated from and intersects the data line 121 to define a pixel area.

Next, as shown in FIGS. 5A and 5B, the second insulating layer 150, which is a thick organic layer, is formed on the gate lines 141, 143, 145, 147, and 149 and the first insulating layer 130. The second insulating layer 150 may be formed by slit coating or spin coating. Although not shown, the uneven pattern 157 is formed by exposing and developing the second insulating layer 150 using a slit mask or a half tone mask. The connection member contact hole 151, the data pad contact hole 153, and the gate pad contact hole 155 are also formed at the same time as the uneven pattern 157 is formed. In another embodiment, although not shown, the uneven pattern 157 may be formed on the second insulating layer 150 by using a mold having a pattern corresponding to the uneven pattern 157. Of course, the connection member contact hole 151, the data pad contact hole 153, and the gate pad contact hole 155 may be formed together with the uneven pattern 157 when molding the mold. The method using a mold is as follows. First, a mold having a pattern corresponding to the uneven pattern 157 and protrusions corresponding to the contact holes 151, 153, and 155 are arranged on the second insulating layer 150. The mold is pressed in the direction of the insulating substrate 110 to form the uneven pattern 157 and the contact holes 151, 153, and 155. Here, a process for removing the residual film remaining during molding may be further added.

6A and 6B, a transparent conductive metal oxide (transparent conductive material) such as indium tin oxide (ITO) or indium zinc oxide (IZO) is sputtered onto the second insulating layer 150, as shown in FIGS. 6A and 6B. After forming through), the transparent electrode layers 161, 163, 165, 167, and 169 are formed using a photolithography process or an etching process. The transparent electrode layers 161, 163, 165, 167, and 169 are connected to the data line 121 through the connection member contact hole 151, and the source electrode 161 at least partially in contact with the organic semiconductor layer 175, and organic A drain electrode 163 separated from the source electrode 161 with the semiconductor layer 175 therebetween to define a channel region, and a pixel electrode 165 connected to the drain electrode 163 to fill the pixel region. . The apparatus further includes a data pad contact member 167 and a gate pad contact member 169.

7A and 7B, the reflective layer 170 is formed by depositing and patterning a reflective layer material on one region of the pixel electrode 165. The reflective layer 170 is formed in a region other than the transmissive region (reflective region). As shown in the drawing, if the reflective layer 170 is formed in one region of the pixel electrode 165, the semi-transmissive liquid crystal display device is formed. If the reflective layer 170 is formed in the entire region of the pixel electrode 165, the reflective liquid crystal is formed. It becomes a display device.

Subsequently, the organic semiconductor solution is added to the channel region to form the organic semiconductor layer 175 as shown in FIGS. 7A and 7B. The organic semiconductor layer 175 may be formed by evaporation or coating. Although not shown, in another embodiment, the organic semiconductor layer 175 may be formed using an inkjet method using barrier ribs.

Next, although not shown, a first protective layer 181 made of a fluorine-based polymer is formed on the organic semiconductor layer 175 through spin coating or slit coating. Subsequently, a second protective layer 182 including at least one of ITO and IZO is formed on the first protective layer 181 by the sputtering method. After the patterning of the second protective layer 182 to correspond to the channel region using a photolithography process, the organic semiconductor layer 175 and the first semiconductor layer 175 may be formed through an etching process using the patterned second protective layer 182. The protective layer 181 is simultaneously patterned. Further, a low temperature organic film 190 is further formed to cover the organic semiconductor layer 175 at the connection member contact hole 151 to complete the organic thin film transistor (O-TFT) as shown in FIG. 2.

Hereinafter, a display device and a manufacturing method thereof according to the second embodiment of the present invention will be described with reference to FIG. 8. In the description of the second embodiment, only characteristic parts distinguished from the above-described first embodiment will be described, and the descriptions thereof will be omitted or summarized according to the first embodiment or known technology.

FIG. 8 is a cross-sectional view of a thin film transistor substrate according to a second embodiment of the present invention, and illustrates an organic thin film transistor having a top gate structure unlike the first embodiment.

In the second embodiment, the data lines 221 and 227 are described in detail in a data line 221 extending in one direction, a data pad (not shown) provided at an end of the data line 221, and one side of the data line 221. The light blocking layer 227 is disposed to correspond to the organic semiconductor layer 275. That is, unlike the first embodiment, a light blocking film 227 is further provided to block light from being irradiated onto the organic semiconductor layer 275.

A first insulating film 230 having a first insulating film contact hole 231 exposing a part of the data line 221 is formed on the data wires 221 and 227.

The source electrode 241, the drain electrode 243, and the sustain electrode line 245 are formed on the first insulating layer 230. One end of the source electrode 241 is connected to the data line 221 through the first insulating film contact hole 231 formed in the first insulating film 230, and the other end thereof extends onto the light blocking film 227. The drain electrode 243 is separated from the source electrode 241 with the light blocking film 227 interposed therebetween to define a channel region, and is connected to the pixel electrode 265. The storage electrode line 245 is provided to be parallel to or intersect with the data line 221. The storage electrode line 245 forms a liquid crystal capacitor together with the second insulating layer 250 and the pixel electrode 265. Here, the source electrode 241, the drain electrode 243 and the sustain electrode line 245 are formed on the same layer and made of the same material at the same time.

A second insulating layer 250 including an organic material is formed on the source electrode 241, the drain electrode 243, and the sustain electrode line 245. The uneven pattern 257, the opening 259 exposing the channel region and the drain contact hole 251 exposing a part of the drain electrode 243 are formed in the second insulating layer 250, and the uneven pattern 257 is formed. , The opening 259 and the drain contact 251 are formed at the same time.

The pixel electrode 260 is formed on the second insulating layer 250, and the pixel electrode 260 is connected to the drain electrode 243 through the drain contact hole 251.

After the pixel electrode 260 is formed, the reflective layer material is deposited and patterned on the pixel electrode 260 to form the reflective layer 270 in at least one region on the pixel electrode 260. The reflective layer 270 may be made of silver, chromium, or an alloy thereof, but may be made of aluminum or an aluminum / molybdenum double layer. The reflective layer 270 is formed in a region other than the transmissive region (reflective region).

Subsequently, according to a known method, the organic semiconductor layer 275 and the organic insulating film 278 are sequentially formed in the opening 259. The gate electrode 280 is formed on the organic insulating film 278. The organic insulating film 278 insulates between the organic semiconductor layer 275 and the gate electrode 280 and protects the organic semiconductor layer 275. Then, by forming the protective layer 290 to protect the gate electrode 280 on the gate electrode 280, a thin film transistor substrate as shown in Figure 8 is completed.

Although some embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that modifications may be made to the embodiment without departing from the spirit or spirit of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

As described above, the present invention provides a transflective or reflective display device having an organic thin film transistor and a method of manufacturing the same.

Claims (13)

An insulating substrate; A data line formed on the insulating substrate; A first insulating film covering the data line; A gate wiring formed on the first insulating film and including a gate electrode; A second insulating film covering the gate wiring and having an uneven pattern formed in at least one region; A transparent electrode layer separated from each other on the second insulating layer on the gate electrode to define a channel region; A reflection layer formed in one region of the transparent electrode layer; And an organic semiconductor layer formed in the channel region. The method of claim 1, The data line includes a data line and a data pad provided at an end of the data line; The gate line may be formed to cross the data line to define a pixel area, a gate pad provided at an end of the gate line, a connecting member positioned between the gate line and the gate electrode, and the gate line to be spaced apart from the gate line. And a sustain electrode line formed along the line. The method of claim 2, The transparent electrode layer is connected to the source electrode connecting the connection member and the organic semiconductor layer, the drain electrode separated from the source electrode with the organic semiconductor layer interposed therebetween, and fills the pixel region. And a pixel electrode. The method of claim 3, The transparent electrode layer includes any one of indium tin oxide (ITO) and indium zinc oxide (IZO). The method of claim 3, The first insulating layer includes an inorganic layer, and a first insulating layer contact hole for exposing a portion of the data line is formed. The second insulating layer includes an organic layer, and a second insulating layer contact hole for exposing a part of the connection member is formed. And the connection member is connected to the data line through the first insulating film contact hole and to the pixel electrode through the second insulating film contact hole. An insulating substrate; A data line formed on the insulating substrate and including a light blocking film; A first insulating film covering the data line; A source electrode and a drain electrode separated from each other on the first insulating layer on the light blocking layer to define a channel region; A second insulating film having an opening exposing the channel region and having an uneven pattern formed in at least one region; A pixel electrode formed on the second insulating film; A reflection layer formed in one region of the uneven pattern; And an organic semiconductor layer formed in the opening. The method of claim 6, An organic insulating film formed on the organic semiconductor layer; And a gate wiring having a gate electrode formed on the organic insulating film. The method of claim 7, wherein The first insulating layer includes an inorganic layer, and a first insulating layer contact hole for exposing a portion of the data line is formed. The second insulating layer includes an organic layer, and a drain contact hole for exposing a part of the drain electrode is formed. And the pixel electrode is connected to the drain electrode through the drain contact hole. Forming a data line on the insulating substrate; Forming a first insulating film to cover the data line; Forming a gate wiring having a gate electrode on the first insulating film; Forming a second insulating film on the gate wiring; Forming an uneven pattern in at least one region of the second insulating film; Forming a transparent electrode layer on the second insulating layer on the gate electrode with the gate electrode separated from each other to define a channel region; Forming a reflective layer in one region on the transparent electrode layer; And forming an organic semiconductor layer in the channel region. Forming a data line having a light blocking film on the insulating substrate; Forming a first insulating film to cover the data line; Forming a source electrode and a drain electrode on the first insulating layer with the light blocking layer interposed therebetween to define a channel region; Forming a second insulating film having an opening exposing the channel region on the source electrode and the drain electrode; Forming an uneven pattern in at least one region of the second insulating film; Forming a pixel electrode on the second insulating film; Forming a reflective layer in one region of the pixel electrode; And forming an organic semiconductor layer in the opening. The method of claim 9 or 10, And the organic semiconductor layer is formed by any one of an evaporation method and an inkjet method. The method of claim 9 or 10, And the concave-convex pattern is formed using any one of a slit mask and a half tone mask. The method of claim 9 or 10, Forming the uneven pattern, Arranging a mold having a pattern corresponding to the uneven pattern on the second insulating layer; And pressing the mold toward the insulating substrate to form an uneven pattern on the second insulating layer.

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