KR20070080501A - Wide beam uniformity controller in the ion implantation device - Google Patents

Abstract

A wide beam uniformity controller of an ion implanter is provided to prevent loss of a rotary shaft of a motor by improving a coupling structure between the rotary shaft of the motor and a coupler. A wide beam uniformity controller includes a plurality of rods(110) and a driving unit. The rods are independently installed in a row at an upper side and a lower side of an ion beam path in order to be moved upwardly and downwardly. The driving unit moves the rods, upwardly and downwardly. The driving unit includes a motor(122) and a coupler(124). The motor includes a rotary shaft having at least one flat plane. The coupler includes a first insertion hole and a second insertion hole in order to transmit the power of the motor to the rods. A motor shaft is inserted into the first insertion hole formed at one end of the coupler. A rod shaft is inserted into the second insertion hole formed at the other end of the coupler.

Description

Wide beam uniformity controller in the ion implantation device

1 is a schematic configuration diagram of an ion implantation apparatus to which an ion beam uniformity adjusting device according to an embodiment of the present invention is applied.

2 is a cross-sectional view of an ion beam uniformity adjusting device according to an embodiment of the present invention.

3 is a view showing the shaft and the coupler of the motor in the ion beam uniformity adjusting device according to an embodiment of the present invention.

4 shows the assembly of the shaft and the coupler of the motor.

* Explanation of symbols for the main parts of the drawings

110: load

112: axis

120: drive device

122: motor

124: Coupler

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation facility used in a manufacturing process of a semiconductor device. Specifically, in order to prevent an ion beam from being unevenly radiated in an ion implantation facility injecting impurities into a substrate, an uneven ion beam is applied by applying an electromagnetic force to the ion beam. An ion beam uniformity adjusting device for uniformizing the

Ion implantation is a technique of implanting impurities into a substrate. The desired impurity material is ionized in the ion source and the ions are accelerated to form an ion beam of predetermined energy, such that the ion beam is directed to the surface of the wafer. Active ions of the beam penetrate into the semiconductor material and are embedded in the crystal lattice of the semiconductor material to form regions of desired conductivity.

The ion beam emitted from the ion source in the ion implanter is mass analyzed to eliminate the incorporation of unwanted ions, accelerated to the desired energy, and directed to the target wafer surface. The ion beam moves evenly through the scanning device, the ion beam syringe is fixed and the target is moved, or the beam is moved evenly to the entire surface of the target wafer by a combination of the scanning and target movement.

The ion beam is scanned in one dimension at an ion source and is emitted from one point called a scan origin, and the ion beam emitted at the ion source passes through a focusing device, which is an ion optical element that performs focusing. The ion optical element converts the diverging ion trajectory into a parallel ion trajectory for delivery to the substrate. The transfer of parallel ion beams to the substrate is an important requirement in many applications. Parallel ion beams are ion beams with parallel ion trajectories across the surface of the substrate.

Focusing, on the other hand, is done with an angle corrector magnet or an electrostatic lens. They perform the bending, focusing and parallelizing functions of the scanned ion beams.

The ion beam passing through the angle corrector magnet or other focusing device may be parallel and convergent or divergent depending on the parameters of the ion beam. When an angle corrector magnet is used, the parallelism can be adjusted by varying the magnetic field of the angle corrector magnet. If the ion beam parameters are changed, readjustment of the angle corrector magnet is required to restore ion beam parallelism.

Here, the ion beam can be divided into a spot beam and a wide beam, and the spot beam is a surface of a large diameter wafer in which ion beams are scanned by ion implantation in a small range of about 1 cm in diameter. In order to radiate the ion beam evenly, the moving distance of the wafer or the moving distance of the ion beam scanner is relatively long, while the ion implantation method using the wide beam is longer than 200 mm for a wafer having a diameter of 200 mm, for example. There is an advantage that the ion implantation is performed by scanning the ion beam of the wafer or the ion beam scanner only by scanning the ion beam, but as the width of the ion beam becomes longer, the electromagnetic uniformity of the ion beam intensity must be premised.

The device for adjusting the uniformity of the ion beam is to apply the local electromagnetic force to the non-uniform portion of the ion beam to homogenize the ion beam, and the rods (magnets) that apply the electromagnetic force to the ion beam are moved by motors. However, due to the structural problem of the coupler connecting the shaft of the motor and the shaft of the rod, a slight gap occurs when the motor rotates, causing the motor to fail.A damage mark is generated by a set screw that fixes the motor shaft to the coupler. There is also a disadvantage that the life time is shortened, there was an inconvenience in assembling because of the set screw fixing method.

An object of the present invention is to provide an ion beam uniformity adjusting device that is easy to assemble a motor and a coupler. SUMMARY OF THE INVENTION An object of the present invention is to provide an ion beam uniformity adjusting device in which damage is less generated at a connection portion of a motor and a coupler.

In order to achieve the above technical problem, the ion beam uniformity adjusting apparatus of the present invention comprises: a plurality of rods installed in a row so as to be able to move up and down independently on the upper and lower sides of a path through which the ion beam passes; And a driving device for vertically moving each of the rods; The drive device includes a motor having a rotating shaft having a flat surface on at least one side; In order to transfer the power of the motor to the rod, a coupler having a first inserting opening having a shape corresponding to the shaft of the motor into which the shaft of the motor is inserted, and a second inserting opening into which the shaft of the rod is inserted into the other end thereof. Equipped.

In an embodiment of the invention, the shaft of the rod is fixed by screws after being inserted into the second insertion opening.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. Portions denoted by like reference numerals denote like elements throughout the specification.

The rods (magnets) that apply electromagnetic force to the ion beam are moved by motors. However, as shown in FIG. 5, due to the structural problem of the coupler connecting the shaft of the motor and the shaft of the rod, a slight gap occurs during the rotation of the motor, resulting in a phenomenon in which the motor is idle, and the set fixing the motor shaft to the coupler. There is a disadvantage that damage marks are generated by the screw, which shortens the life time, and there is inconvenience in assembling because the set screw is fixed.

The present invention relates to a device that can adjust the uniformity of the ion beam in the ion implantation equipment for injecting impurities into the substrate, the present invention is to change the connection structure of the shaft and the coupler of the motor so that the assembly is easy and does not cause damage There is a characteristic.

As described above, an apparatus for adjusting the uniformity of the ion beam will be described with reference to the accompanying drawings.

1 is a schematic configuration diagram of an ion implantation apparatus to which an ion beam uniformity adjusting device according to an embodiment of the present invention is applied. 2 is a cross-sectional view of an ion beam uniformity adjusting device according to an embodiment of the present invention. FIG. 3 is a view illustrating an axis and a coupler of a motor in the ion beam uniformity adjusting device according to an embodiment of the present invention. 4 shows the assembly of the shaft and the coupler of the motor.

Referring to FIG. 1, the ion implantation apparatus 200 includes an ion source 210, a beam line chamber 220, and an end station chamber 240.

The ion source 210 includes an arc chamber 212 and a filament 214 for emitting hot electrons, and the like. The source gas supplied to the arc chamber 212 may be ionized by collision with hot electrons. In addition, an ion source 210 such as a radio frequency type duoplasmatron, a cold cathode type, a sputter type, a penning ionization type, or the like may be used.

The beam line chamber 220 includes an ion extractor 222 for extracting the ion beam from the ion source 210, a first polarity converter 224 for converting the polarity of the ion beam extracted by the ion extractor 222, and a polarity. A mass spectrometer 226 for sorting specific ions from the converted ion beam, an injector Faraday cup assembly 228 for measuring the ion current of the ion beam consisting of the sorted ions, an accelerator for accelerating the ion beam of the sorted ions 230, a second polarity transducer 232 connected to the accelerator 230 to convert the polarity of the ion beam passing through the accelerator 230, a focusing magnet 234 to focus the accelerated ion beam, and the like. .

The first polar converter 224 includes a solid magnesium and a heater used as the electron donating material. A high heat of about 450 ° C. is provided to the solid magnesium from the heater, and gaseous magnesium molecules are released from the solid magnesium to collide with the extracted ion beam. The ion beam then obtains electrons from the magnesium molecule and converts it to an ion beam having negative properties. As described above, the ion beam having negative properties is provided to the accelerator 230 by selecting only specific ions from the mass analyzer 226.

As the accelerator 230, a tandetron chamber including a plurality of electrodes to which a high voltage is applied may be used. The positive ion beam converted by the first accelerator 230a and the second polar converter 232 to accelerate the negative ion beam may be used. It includes a second acceleration unit 230b for accelerating. The second polarity converter 232 is disposed between the first accelerator 230a and the second accelerator 230b and converts the negative ion beam into a positive ion beam by using a stripping gas such as nitrogen gas.

The positive ion beam accelerated through the accelerator 230 is focused through the focusing magnet 234 and is incident on the semiconductor substrate 10. In this case, a scanner (not shown) may be further provided to inject ions into the semiconductor substrate 10 as a whole. On the other hand, when converted into a positive ion beam by the second polar converter 232, the positive ion beam includes ions having various energy levels. An ion filter (not shown) may be further provided to select ions having a specific energy from among ions having various energy levels included in the positive ion beam.

The end station chamber 240 includes a rotating disk 202 for supporting and rotating a plurality of semiconductor substrates 10, and a plurality of chucks for supporting the semiconductor substrates 10 on the rotating disk 202. (Not shown) and an opening for passing the ion beam are provided in the circumferential direction. The rotating disk 202 is connected to a vertical driver (not shown), and a scan motor 140 for rotating the rotating disk 202 is connected to the rear surface of the rotating disk 202. More specifically, the rotating disk 202 has a disk shape, and a plurality of semiconductor substrates 10 are disposed along the edges. During the ion implantation process, the rotating disk 202 may be vertically moved and rotated by the vertical driver and the scan motor 140 such that the positive ion beam is entirely injected into the semiconductor substrates 10. In addition, a disk Faraday cup assembly 204 is disposed at the rear of the rotating disk 202 for measuring the ion current of the ion beam passed through the opening every rotation, and counting of ions injected into the semiconductor substrate 10 is performed. By ion current measurement.

The ion implantation apparatus 200 is provided with an ion beam uniformity adjusting device 100 on the mass analyzer 226 and the accelerator 230 of the beam line chamber or on the movement path of the ion beam. The ion beam uniformity adjusting apparatus 100 measures uniformity with a profiler (not shown) to secure uniformity of the ion beam 10, and in the case of poor uniformity, adjusts the ion source 110 or adjusts the magnet. The method of adjusting and changing the scanning conditions of the ion beam 10 in the generation step of the ion beam 10 or subsequent delivery step is used.

The ion beam uniformity adjusting apparatus 100 of the present invention is a device capable of generating a local electromagnetic force up and down in the direction in which the ion beam 10 is radiated, as shown in FIGS. That is, the density of the ion beam 10 is locally increased, and the portion where the ion beam 10 is concentrated is an electromagnetic force acting only on the portion to lower the density of the ion beam 10 to secure uniformity, and conversely, the density of the ion beam 10 is increased. The lower portion is an electromagnetic force acting around the portion to increase the density of the ion beam 10 of the low density portion of the ion beam 10 to perform a process of ensuring uniformity of the ion beam 10 as a whole.

In order to apply local electromagnetic force to the upper and lower sides of the direction in which the ion beam 10 is radiated, the rods 110 formed of a plurality of magnetic materials are installed in the upper and lower sides of the ion beam 10 in a row, and the plurality of rods 110 are provided. By combining the driving device 120 that can move them up and down, the rods 110 are independently moved to change the local electromagnetic force.

3 and 4, the driving device 120 independently moves the rod up and down by using the motor 122 and the coupler 124. Here, the motor 122 has a rotating shaft 122a having a flat surface 122 ′ at least one side thereof, and the coupler 124 has a rotating shaft 122a so that the rotating shaft 122a of the motor 122 is inserted into one end thereof. First insertion holes 125 having the same shape are formed. Coupling of the rotation shaft 122a and the coupler 124 of the motor 122 is made by inserting only without screwing. The rotating shaft 122a of the motor may be formed in a square pillar shape. The other end of the coupler 124 is provided with a second insertion hole 126 into which the shaft 112 of the rod 110 is inserted, and the shaft 112 of the rod 110 is inserted into the second insertion hole 126 and then screwed. Is fixed by 190. On the other hand, at the lower end side of the coupler 124, a third insertion hole 127 into which the rod shaft fixing screw 190 is inserted, and a fourth insertion hole 128 to which the coupling rod driver fixing screw 192 is fastened are formed. .

As described above, since the present invention does not require a separate fastening means for fixing the rotating shaft 122a and the coupler 124 of the motor 122, it is easy to replace the motor in the event of a motor failure.

Here, the substrate refers to a substrate for a photo reticle, a display panel substrate such as a substrate for a liquid crystal display panel or a substrate for a plasma display panel, a substrate for a hard disk, a wafer for an electronic device such as a semiconductor device, and the like. do.

On the other hand, in the present invention, the ion beam uniformity adjusting device having the above configuration can be variously modified and can take various forms. It is to be understood, however, that the present invention is not limited to the specific forms referred to in the above description, but rather includes all modifications, equivalents and substitutions within the spirit and scope of the invention as defined by the appended claims. It should be understood to do.

As described above, according to the present invention, as compared with the prior art, it is possible to more firmly and facilitate the fastening structure of the rotational shaft of the motor and the coupler, and also to prevent the rotational axis of the motor from running down, so that the accurate movement of the rod can be achieved. Makes this possible.

Claims (2)

In the ion beam uniformity adjusting device of the ion implanter: A plurality of rods arranged in a row to vertically move independently above and below a path through which the ion beam passes; And A drive device for moving each rod up and down; The drive device A motor having a rotating shaft having at least one flat surface; In order to transfer the power of the motor to the rod, a coupler having a first inserting opening having a shape corresponding to the shaft of the motor into which the shaft of the motor is inserted, and a second inserting opening into which the shaft of the rod is inserted into the other end thereof. The ion beam uniformity adjusting apparatus of the ion implanter characterized by including. The method of claim 1, And the shaft of the rod is inserted into the second insertion hole and then fixed by a screw.

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