KR20070070831A - Fabricating method of vertical extended cavity surface emitting laser and vertical extended cavity surface emitting laser using the same - Google Patents

Fabricating method of vertical extended cavity surface emitting laser and vertical extended cavity surface emitting laser using the same Download PDF

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KR20070070831A
KR20070070831A KR1020050133763A KR20050133763A KR20070070831A KR 20070070831 A KR20070070831 A KR 20070070831A KR 1020050133763 A KR1020050133763 A KR 1020050133763A KR 20050133763 A KR20050133763 A KR 20050133763A KR 20070070831 A KR20070070831 A KR 20070070831A
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mirror
dbr mirror
surface emitting
emitting laser
dbr
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KR100810230B1 (en
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허두창
이중기
황선령
박성수
박병훈
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

Abstract

A method for manufacturing an optical source of a vertical surface emitting laser and a vertical extended cavity surface emitting laser using the same are provided to minimize an optical loss and a resistance of a laser source by gradually increasing doping quantity in a p-DBR mirror. A vertical extended cavity surface emitting laser includes a pumping semiconductor chip(110) and an external mirror(111). The pumping semiconductor chip includes a p-DBR(Distributed Bragg Reflector) mirror, an activation layer, an n-DBR mirror, and an n-sub layer. The p-DBR mirror is doped, so that the doping quantity is gradually increased therein. The activation layer is grown on the p-DBR mirror. The n-DBR mirror is formed on the activation layer. The n-sub layer is grown on the n-DBR mirror. The external mirror oscillates and outputs the beam from the pumping semiconductor chip to a laser beam. The pumping semiconductor chip is attached on an upper surface of a heat sink.

Description

수직 표면 방출 레이저 광원의 제작 방법과 그를 이용한 수직 표면 방출 레이저{FABRICATING METHOD OF VERTICAL EXTENDED CAVITY SURFACE EMITTING LASER AND VERTICAL EXTENDED CAVITY SURFACE EMITTING LASER USING THE SAME}Method for manufacturing vertical surface emitting laser light source and vertical surface emitting laser using the same TECHNICAL FIELD

도 1은 수직 표면 방출 레이저 광원을 도시한 도면, 1 shows a vertical surface emitting laser light source,

도 2는 본 발명에 따른 수직 표면 방출 레이저 광원의 광분포와 도핑 방법을 설명하기 위한 그래프,2 is a graph illustrating a light distribution and a doping method of a vertical surface emitting laser light source according to the present invention;

도 3은 도핑에 따른 저항 변화를 설명하기 위한 그래프,3 is a graph illustrating a change in resistance according to doping;

도 4는 도핑에 따른흡수 계수 변화를 설명하기 위한 그래프,4 is a graph illustrating a change in absorption coefficient according to doping;

도 5a 내지 도 5d는 도핑 변화에 따른 광 손실 및 흡수 변화를 비교 설명하기 위한 그래프.5A to 5D are graphs for comparing and comparing light loss and absorption change with doping change.

본 발명은 레이저 광원 관한 발명으로서, 특히 저 저항의 전기적 특성 및 저손실의 광학적 특성을 갖는 수직 표면 방출 레이저(VECSEL; Vertical extended cavity surface emitting laser) 광원에 관한 발명이다. The present invention relates to a laser light source, and more particularly, to a vertical extended cavity surface emitting laser (VECSEL) light source having low resistance electrical characteristics and low loss optical characteristics.

통상의 수직 표면 방출 레이저는 그 상부에 광 펌핑 반도체 칩이 본딩(bonding)된 히트 싱크와, 상기 광 펌핑 반도체 칩을 펌핑시키기 위한 펌핑 소스와, 외부 미러, 상기 광 펌핑 반도체 칩에서 내에 위치되며 광을 상기 외부 미러와의 사이에서 공진시키기 위한 DBR(Distributed Bragg Reflection) 미러를 포함한다. A typical vertical surface emitting laser has a heat sink bonded to an optically pumped semiconductor chip thereon, a pumping source for pumping the optically pumped semiconductor chip, an external mirror, located within and in the optically pumped semiconductor chip. It includes a distributed Bragg Reflection (DBR) mirror for resonating with the external mirror.

상기 DBR 미러는 AlGaAs/AlGaAs의 연속적인 이종 접합으로 구성되며, 이종 접합 영역에서의 밴드 불연속성으로 인해서 전기적 저항이 크다. 특히, 고 반사율을 유지해야하는 수직 표면 방출 레이저는 그 접합이 30쌍 이상 필요하므로 그에 따라서 저항이 증가하는 문제가 있다. The DBR mirror is composed of continuous heterojunctions of AlGaAs / AlGaAs, and has high electrical resistance due to band discontinuity in the heterojunction region. In particular, vertical surface emitting lasers that must maintain high reflectivity require more than 30 pairs of junctions, thus increasing the resistance.

상술한 문제를 해결하기 위한 수단은 AlGaAs/AlGaAs의 연속적인 이종 접합의 층들 사이의 접합부에 조성의 점진적인 변화와 밴드 옵셋을 줄이기 위한 적절한 도핑 방법 등이 제안되고 있다.Means for solving the above problems have been proposed such as a gradual change in composition and an appropriate doping method for reducing the band offset in the junction between the layers of the continuous heterojunction of AlGaAs / AlGaAs.

그러나, 상술한 점진적인 조성의 변화와 도핑은 광학적 손실 증가를 유발하는 문제가 있다. 즉, 저항을 줄이기 위해서 도핑 농도를 증가시키면 광학적 손실이 증하하고, 광학적 손실을 줄이기 위해서 도핑을 줄이면 저항이 증가하는 문제가 있다. However, the above-mentioned gradual change and doping have a problem of causing an optical loss increase. In other words, if the doping concentration is increased to reduce the resistance, the optical loss increases, and if the doping is reduced to reduce the optical loss, the resistance increases.

본 발명은 광학적 손실과 전기적 손실을 동시에 줄일 수 있는 DBR 미러의 도핑 방법을 제공하는 데 목적이 있다. It is an object of the present invention to provide a doping method for a DBR mirror which can simultaneously reduce optical and electrical losses.

본 발명의 제1 측면에 따른 수직 표면 방출 레이저 광원의 제작 방법은, According to a first aspect of the present invention, a method of manufacturing a vertical surface emitting laser light source is

점진적으로 도핑의 양이 증가하도록 P-DBR 미러를 형성하는 과정과;Forming a P-DBR mirror to gradually increase the amount of doping;

상기 P-DBR 미러 상에 활성층과, n-DBR 미러와, n형 sub를 순차적으로 성장시키는 과정을 포함한다. And sequentially growing an active layer, an n-DBR mirror, and an n-type sub on the P-DBR mirror.

본 발명의 제2 측면에 따른 수직 표면 방출 레이저는,According to a second aspect of the present invention, a vertical surface emitting laser,

점진적으로 양이 증가되도록 도핑된 p-DBR 미러와, 상기 P-DBR 미러 상에 성장된 활성층과, 상기 활성층 상에 n-DBR 미러와, 상기 n-DBR 미러 상에 성장된 n-sub 층을 포함하는 펌핑 반도체 칩과;A p-DBR mirror doped in incremental amounts, an active layer grown on the P-DBR mirror, an n-DBR mirror on the active layer, and an n-sub layer grown on the n-DBR mirror. A pumping semiconductor chip comprising;

상기 펌핑 반도체 칩에서 생성된 광을 레이저 광으로 발진시키기 위한 외부 미러를 포함한다.And an external mirror for oscillating light generated by the pumping semiconductor chip into laser light.

이하에서는 첨부도면들을 참조하여 본 발명의 실시 예를 상세히 설명하기로 한다. 본 발명을 설명함에 있어서, 관련된 공지기능, 혹은 구성에 대한 구체적인 설명은 본 발명의 요지를 모호하지 않게 하기 위하여 생략한다.Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; In describing the present invention, detailed descriptions of related well-known functions or configurations are omitted in order not to obscure the subject matter of the present invention.

도 1은 수직 표면 방출 레이저를 도시한 도면이다. 도 1을 참조하면, 수직 표면 방출 레이저(100)는 그 상부에 광 펌핑 반도체 칩(110)이 본딩(bonding)된 히트 싱크(130)와, 상기 광 펌핑 반도체 칩(110)에서 생성된 광을 상기 광 펌핑 반도체 칩(110)과의 사이에서 레이저 광으로 발진시키기 위한 외부 미러(120)를 포함한다. 통상적으로 상기 수직 표면 방출 레이저(100)는 상기 광 펌핑 반도체 칩(110) 을 펌핑시키기 위한 펌핑 소스(미도시)를 더 포함할 수 있다. 상기 외부 미러(120)는 오목(concave) 형태의 미러가 사용될 수 있다. 1 shows a vertical surface emitting laser. Referring to FIG. 1, the vertical surface emission laser 100 may include a heat sink 130 in which an optical pumping semiconductor chip 110 is bonded, and light generated from the optical pumping semiconductor chip 110. External mirror 120 for oscillating with the laser light between the optical pumping semiconductor chip 110. Typically, the vertical surface emission laser 100 may further include a pumping source (not shown) for pumping the optical pumping semiconductor chip 110. The outer mirror 120 may be a concave mirror.

상기 광 펌핑 반도체 칩(110)은 p-ohmic 층(116)과, p-DBR(Distributed Bragg Reflection) 미러(111)와, 상기 p-DBR 미러(111) 상에 성장된 활성층(112)과, 상기 활성층(112) 상에 성장된 n-DBR(113)과, 상기 n-DBR(113) 상에 성장된 n-sub(114)와, 상기 n-sub(114) 상에 성장된 n-ohmic(115)를 포함한다. The optical pumping semiconductor chip 110 may include a p-ohmic layer 116, a distributed bragg reflection (p-DBR) mirror 111, an active layer 112 grown on the p-DBR mirror 111, N-DBR 113 grown on the active layer 112, n-sub 114 grown on the n-DBR 113, n-ohmic grown on the n-sub 114 115.

상기 p-DBR 미러(111)는 AlGaAs/AlGaAs와 같은 반도체 물질들을 수십 층 반복 적층되며 고 반사(High reflection) 미러의 기능을 제공한다. 즉, 상기 p-DBR 미러(111)와 상기 외부 미러(120)는 일종의 확장 공진기로서 상기 활성층(112)에서 생성된 광을 레이저 광으로 발진시키며, 발진된 레이저 광은 상기 외부 미러(120)를 통해서 외부로 출력된다. 또한, 상기 n-DBR 미러(113)는 상기 p-DBR 미러(111)와 함께 내부 공진을 유도한다. The p-DBR mirror 111 repeatedly stacks dozens of semiconductor materials such as AlGaAs / AlGaAs and provides a function of a high reflection mirror. That is, the p-DBR mirror 111 and the external mirror 120 are a kind of expansion resonator, and oscillate the light generated by the active layer 112 with laser light, and the oscillated laser light may cause the external mirror 120 to be moved. It is output through the outside. In addition, the n-DBR mirror 113 induces internal resonance together with the p-DBR mirror 111.

도 2는 본 발명에 따른 수직 표면 방출 레이저(100)의 광 분포와 도핑 방법을 나타내는 도면이다. 상기 수직 표면 방출 레이저(100)는 문턱 전류가 최소화되기 위해서 상기 활성층(112)에서 상대적으로 높은 광이 분포한다. 본 발명에 따른 p-DBR 미러(111)는 도 2에 도시된 바와 같이 상기 활성층(112)에서 멀어질수록 광 분포가 점진적으로 작아지는 도시된 그림자 영역(12~16㎛)처럼 점진적으로 도핑의 양을 증가(0.0~0.7)되도록 도핑된다. 본 발명은 모드(mode)에 따라서 도핑의 양을 조절할 수 있다. 2 is a view showing the light distribution and the doping method of the vertical surface emission laser 100 according to the present invention. The vertical surface emission laser 100 has a relatively high light distribution in the active layer 112 in order to minimize the threshold current. As shown in FIG. 2, the p-DBR mirror 111 according to the present invention is progressively doped as shown in the shadow region (12 to 16 μm), in which the light distribution gradually decreases away from the active layer 112. Doped to increase the amount (0.0 ~ 0.7). The present invention can adjust the amount of doping according to the mode.

수직 표면 방출 레이저는 DBR 미러의 광학적 반사율이 커야하고, 전기적 저 항이 작고, 열적 전도도가 커야된다. 그러나, 이종 접합 구조로 형성된 DBR 미러는 연속적으로 적층된 이종 접합면에서 밴드의 불연속으로 인해서 높은 전기적 저항 특성을 갖는다. 상술한 전기적 저항을 최소화시키기 위해서 이종 접합부에서 조성을 점진적으로 변화된 도핑을 실시해서 밴드 오프셋(band-offset)을 줄이는 방법이 있다. 도 3은 도핑에 따른 저항 변화를 설명하기 위한 그래프이다. 도 3을 참조하면, 저항이 증가 될수록 도핑이 작아짐을 알 수 있다. 그러나, 상술한 도핑은 광손실의 원인을 제공할 수 있다. 도 4는 도핑에 따른 흡수 계수 변화를 설명하기 위한 그래프이다. 도 4를 참조하면, 전기적 저항을 줄이기 위해서 도핑을 실시하면 도핑으로 인해서 흡수가 증가된다. 또한, 흡수의 증가는 문턱 전류의 증가를 유발한다. Vertical surface emitting lasers require a high optical reflectance of the DBR mirror, a low electrical resistance and a high thermal conductivity. However, DBR mirrors formed of heterojunction structures have high electrical resistance characteristics due to discontinuity of bands in successive laminated heterojunction surfaces. In order to minimize the above-mentioned electrical resistance, there is a method of reducing the band offset by performing a gradual change in doping of the composition at the heterojunction. 3 is a graph illustrating a change in resistance according to doping. Referring to FIG. 3, it can be seen that doping decreases as the resistance is increased. However, the doping described above may provide a cause of light loss. 4 is a graph for explaining a change in absorption coefficient according to doping. Referring to FIG. 4, when doping is performed to reduce electrical resistance, absorption is increased due to doping. In addition, the increase in absorption causes an increase in the threshold current.

반면에, 도 2에 도시된 바와 같이 본원 발명은 p-DBR 미러의 광 분포가 낮은 영역에서 높은 영역으로 점진적으로 도핑의 양을 증가시킴으로써, 광 손실 및 전기적 저항을 최소화시킬 수 있다. On the other hand, as shown in FIG. 2, the present invention can minimize the light loss and the electrical resistance by gradually increasing the amount of doping from the low light distribution region of the p-DBR mirror to the high region.

아래의 표 1은 DBR 층의 도핑에 따른 저항과 광 손실 값을 비교하기 위한 표이고, 도 5a 내지 도 5d는 도핑 변화에 따른 광 손실 및 흡수 변화를 비교 설명하기 위한 그래프이다. 도 5a 내지도 5d의 x축은 위치를 나타내고, y축은 도핑 정도를 나타낸다. Table 1 below is a table for comparing the resistance and the light loss value according to the doping of the DBR layer, Figure 5a to 5d is a graph for comparing the light loss and absorption change according to the doping change. 5A to 5D, the x axis represents a position and the y axis represents a degree of doping.

도 5a5a 도 5b5b 도 5cFig 5c 도 5d5d N(x) N (x) 1e18 1e18 2e18 2e18 2.33e14+1e18 2.33e14 + 1e18 5e11x2+1e185e11x 2 + 1e18 ρρ 9.344e-59.344e-5 5.4171e-55.4171e-5 7.0464e-57.0464e-5 4.5943e-54.5943e-5 αα 2.96092.9609 4.31434.3143 3.09583.0958 3.19123.1912

도 5c 및 도 5d와 같이 본원 발명에 따른 수직 표면 발광 레이저는 광 손실 및 저항이 다른 방법에 비해서 낮아짐을 알 수 있다. 5c and 5d, the vertical surface emitting laser according to the present invention can be seen that the light loss and resistance is lower than other methods.

본 발명은 p-DBR 미러를 도핑의 양을 점진적으로 증가하도록 형성함으로써 수직 표면 방출 레이저 광원의 광 손실과 저항의 최소화시키고, 납은 문턱 전류로 높은 광 출력을 얻을 수 있다. The present invention minimizes the light loss and resistance of the vertical surface emitting laser light source by forming the p-DBR mirror to gradually increase the amount of doping, and lead can obtain a high light output with a threshold current.

Claims (4)

수직 표면 방출 레이저의 제작 방법에 있어서, In the manufacturing method of the vertical surface emission laser, 점진적으로 도핑의 양이 증가하도록 P-DBR 미러를 형성하는 과정과;Forming a P-DBR mirror to gradually increase the amount of doping; 상기 P-DBR 미러 상에 활성층과, n-DBR 미러와, n형 sub를 순차적으로 성장시키는 과정을 포함함을 특징으로 하는 수직 표면 방출 레이저의 제작 방법.And sequentially growing an active layer, an n-DBR mirror, and an n-type sub on the P-DBR mirror. 수직 표면 방출 레이저에 있어서,In a vertical surface emitting laser, 점진적으로 양이 증가되도록 도핑된 p-DBR 미러와, 상기 P-DBR 미러 상에 성장된 활성층과, 상기 활성층 상에 n-DBR 미러와, 상기 n-DBR 미러 상에 성장된 n-sub 층을 포함하는 펌핑 반도체 칩과;A p-DBR mirror doped in incremental amounts, an active layer grown on the P-DBR mirror, an n-DBR mirror on the active layer, and an n-sub layer grown on the n-DBR mirror. A pumping semiconductor chip comprising; 상기 펌핑 반도체 칩에서 생성된 광을 레이저 광으로 발진시키기 위한 외부 미러를 포함함을 특징으로 하는 수직 표면 방출 레이저.And an external mirror for oscillating light generated by the pumping semiconductor chip into laser light. 제2 항에 있어서, 상기 수직 표면 방출 레이저는,The laser of claim 2, wherein the vertical surface emission laser is: 그 상면에 상기 펌핑 반도체 칩이 부착되는 히트 싱크를 더 포함함을 특징으로 하는 수직 표면 방출 레이저.And a heat sink to which the pumping semiconductor chip is attached on an upper surface thereof. 제2 항에 있어서,The method of claim 2, 상기 p-DBR 미러는 상기 활성층에서 멀어질수록 점진적으로 도핑의 양을 증가되게 도핑됨을 특징으로 하는 수직 표면 방출 레이저.And the p-DBR mirror is doped to gradually increase the amount of doping as it moves away from the active layer.
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CN111987575A (en) * 2020-07-23 2020-11-24 中山大学 Hybrid integration method of erbium-doped optical waveguide amplifier of on-chip indirect electric pump
CN111987575B (en) * 2020-07-23 2022-02-18 中山大学 Hybrid integration method of erbium-doped optical waveguide amplifier of on-chip indirect electric pump

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