KR20070068745A - Chuck heater of semiconductor manufacturing apparatus - Google Patents

Chuck heater of semiconductor manufacturing apparatus Download PDF

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Publication number
KR20070068745A
KR20070068745A KR1020050130702A KR20050130702A KR20070068745A KR 20070068745 A KR20070068745 A KR 20070068745A KR 1020050130702 A KR1020050130702 A KR 1020050130702A KR 20050130702 A KR20050130702 A KR 20050130702A KR 20070068745 A KR20070068745 A KR 20070068745A
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South Korea
Prior art keywords
wafer
chuck
semiconductor manufacturing
manufacturing apparatus
guide pins
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KR1020050130702A
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Korean (ko)
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기기태
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삼성전자주식회사
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Priority to KR1020050130702A priority Critical patent/KR20070068745A/en
Publication of KR20070068745A publication Critical patent/KR20070068745A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A chuck heater for a semiconductor fabricating apparatus is provided to prevent guide pins from being easily released from a body of the chuck by improving a shape of the guide pin. A chuck includes a chuck, on which a wafer is mounted, and plural guide pins(140) for supporting the wafer. The guide pins have the same radius of curvature as the wafer to surround the wafer. Each guide pin has a body(140a) has a body(140a) of which a horizontal width(W1) is larger than a vertical width(W2), and a head portion(140b) with protruding portions(140c) at both ends thereof. The guide pins are arranged around a periphery of the wafer at regular intervals.

Description

반도체 제조 장치의 척히터{CHUCK HEATER OF SEMICONDUCTOR MANUFACTURING APPARATUS}CHUCK HEATER OF SEMICONDUCTOR MANUFACTURING APPARATUS}

도 1은 종래 기술에 따른 반도체 제조 장치의 척히터를 도시한 단면도.1 is a cross-sectional view showing a chuck heater of a semiconductor manufacturing apparatus according to the prior art.

도 2는 종래 기술에 따른 반도체 제조 장치의 척히터에 있어서 가이드핀을 도시한 정면도.Figure 2 is a front view showing the guide pin in the chuck heater of the semiconductor manufacturing apparatus according to the prior art.

도 3은 종래 기술에 따른 반도체 제조 장치의 척히터에 있어서 척히터를 도시한 평면도.3 is a plan view illustrating the chuck heater in the chuck heater of the semiconductor manufacturing apparatus according to the prior art.

도 4는 본 발명의 실시예에 따른 반도체 제조 장치의 척히터를 도시한 단면도.4 is a cross-sectional view showing a chuck heater of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

도 5는 본 발명의 실시예에 따른 반도체 제조 장치의 척히터에 있어서 가이드핀을 도시한 사시도.5 is a perspective view showing a guide pin in the chuck heater of the semiconductor manufacturing apparatus according to the embodiment of the present invention.

도 6은 본 발명의 실시예에 따른 반도체 제조 장치의 척히터에 있어서 척을 도시한 평면도.6 is a plan view illustrating the chuck in the chuck heater of the semiconductor manufacturing apparatus according to the embodiment of the present invention;

< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

100; 척히터 120; 척100; Chuck Heater 120; chuck

140; 가이드핀 140a; 가이드핀 몸체부140; Guide pin 140a; Guide Pin Body

140b; 가이드핀 머리부 140c; 가이드핀 돌출부140b; Guide pin head 140c; Guide pin protrusion

본 발명은 반도체 제조 장치에 관한 것으로, 보다 상세하게는 반도체 제조 장치의 척히터에 관한 것이다.The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a chuck heater of a semiconductor manufacturing apparatus.

반도체 소자를 제조하기 위해선 반도체 웨이퍼를 대상으로 여러 다양한 공정을 적용한다. 반도체 제조공정 중에는 반도체 웨이퍼 상에 소정의 박막을 화학기상증착법으로 형성하는 화학기상증착법이 거의 필수적으로 사용된다. 화학기상증착 공정을 진행하기 위해선 웨이퍼를 척히터에 장착하여 화학기상증착 공정을 진행하는 화학기상증착 장치를 사용하는 것이 보편적이다.In order to manufacture a semiconductor device, various processes are applied to a semiconductor wafer. During the semiconductor manufacturing process, a chemical vapor deposition method for forming a predetermined thin film on the semiconductor wafer by chemical vapor deposition is almost essential. In order to proceed with the chemical vapor deposition process, it is common to use a chemical vapor deposition apparatus in which a wafer is mounted on a chuck heater to perform a chemical vapor deposition process.

도 1은 종래 기술에 따른 화학기상증착 장치의 척히터를 도시한 단면도이다. 도 1을 참조하면, 종래의 척히터(10)는 웨이퍼(W)가 장착되는 디스크 형태의 척(12)이 있고, 척(12)의 상면에는 웨이퍼(W)의 외주변을 지지하여 고정시키는 다수개의 가이드핀(14)이 있다.1 is a cross-sectional view showing a chuck heater of a chemical vapor deposition apparatus according to the prior art. Referring to FIG. 1, a conventional chuck heater 10 has a disk-shaped chuck 12 on which a wafer W is mounted, and supports and fixes an outer circumference of the wafer W on an upper surface of the chuck 12. There are a plurality of guide pins 14.

도 2는 종래 기술에 따른 화학기상증착 장치의 척히터에 있어서 가이드핀을 도시한 정면도이고, 도 3은 종래 기술에 따른 화학기상증착 장치의 척히터에 있어서 척히터를 도시한 평면도이다. 도 2를 참조하면, 가이드핀(14)은 원통형의 못과 같은 모양을 취하며 직경은 대략 2 mm 정도이고, 머리부가 약 1 mm 정도의 길이며 몸체부는 약 4 mm 정도의 길이로서 전체 길이는 대략 5 mm 정도로 아주 작다. 이러한 가이드핀(14)은, 도 3에 도시된 바와 같이, 웨이퍼(W)의 둘레 방향으로 약 8개 정도가 사용된다.Figure 2 is a front view showing a guide pin in the chuck heater of the chemical vapor deposition apparatus according to the prior art, Figure 3 is a plan view showing the chuck heater in the chuck heater of the chemical vapor deposition apparatus according to the prior art. Referring to FIG. 2, the guide pin 14 has a cylindrical nail shape and has a diameter of about 2 mm, a head length of about 1 mm, and a body length of about 4 mm. Very small, about 5 mm. As shown in FIG. 3, about eight such guide pins 14 are used in the circumferential direction of the wafer W. As shown in FIG.

상술한 바와 같이, 종래의 가이드핀(14)의 길이는 짧기 때문에 가이드핀(14)이 척(12)으로부터 빠지는 현상이 종래에 종종 있었다. 가이드핀(14)이 빠지게 되면 웨이퍼(W)의 지지 상태가 불안정하게 되고, 이러한 상태로 화학기상증착 공정을 진행하다 보면 웨이퍼(W)에 이상증착 현상이 있었다. 웨이퍼(W)의 이상증착은 공정불량이 되고 이는 곧 수율하락으로 이어지는 문제점이 있었다.As described above, the conventional guide pin 14 has a short length so that the guide pin 14 is often removed from the chuck 12. When the guide pin 14 is pulled out, the support state of the wafer W becomes unstable, and when the chemical vapor deposition process proceeds in this state, abnormal deposition on the wafer W occurred. Abnormal deposition of the wafer (W) is a process defect, which has a problem that leads to a yield decline soon.

이에 본 발명은 상술한 종래 기술상의 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 웨이퍼 지지상태를 안정화시킬 수 있는 반도체 제조 장치의 척히터를 제공함에 있다.Accordingly, the present invention has been made to solve the above-described problems in the prior art, an object of the present invention to provide a chuck heater of the semiconductor manufacturing apparatus capable of stabilizing the wafer support state.

상기 목적을 달성하기 위한 본 발명에 따른 반도체 제조 장치의 척히터는 가이드핀의 모양을 개선시켜 가이드핀이 빠지는 현상을 없애거나 최소화하는 것을 특징으로 한다.The chuck heater of the semiconductor manufacturing apparatus according to the present invention for achieving the above object is characterized by eliminating or minimizing the phenomenon that the guide pin is missing by improving the shape of the guide pin.

상기 특징을 구현할 수 있는 본 발명의 실시예에 따른 반도체 제조 장치의 척히터는, 웨이퍼를 장착하는 척과, 상기 척 상에 마련되어 상기 웨이퍼를 지지하는 복수개의 가이드핀을 포함하며, 상기 복수개의 가이드핀 각각은 상기 웨이퍼의 둘레와 동일한 곡률을 가지며 상기 웨이퍼의 둘레를 감싸는 형태인 것을 특징으로 한다.A chuck heater of a semiconductor manufacturing apparatus according to an embodiment of the present invention capable of implementing the above features includes a chuck for mounting a wafer, and a plurality of guide pins provided on the chuck to support the wafer, wherein the plurality of guide pins are provided. Each has the same curvature as the circumference of the wafer and is characterized in that the form surrounding the circumference of the wafer.

본 실시예에 있어서, 상기 복수개의 가이드핀 각각은, 가로폭이 세로폭에 비 해 상대적으로 크고 상기 가로폭이 상기 웨이퍼의 둘레의 곡률과 동일한 곡률을 가지는 몸체부 및 상기 몸체부의 가로폭 및 세로폭 각각에 비해 상대적으로 큰 가로폭과 세로폭을 가지며 양측단부에 돌출부를 갖는 머리부를 포함한다.In the present embodiment, each of the plurality of guide pins, the width of the body portion relative to the vertical width and the width of the body portion having the same curvature as the curvature of the circumference of the wafer and the width and length of the body portion It includes a head having a relatively large width and length width relative to each of the width and having protrusions on both side ends.

본 실시예에 있어서, 상기 각 가이드핀은 세라믹으로 구성된다.In this embodiment, each guide pin is made of ceramic.

본 실시예에 있어서, 상기 복수개의 가이드핀은 상기 웨이퍼의 둘레에 등간격으로 배열된다.In the present embodiment, the plurality of guide pins are arranged at equal intervals around the wafer.

본 발명에 의하면, 가이드핀의 가로폭이 비교적 커서 척에 상대적으로 견고히 고정되어, 가이드핀의 척으로부터의 탈락이 최소화된다. 이에 따라, 웨이퍼의 지지 불안정성에 따른 웨이퍼의 이상증착 현상이 최소화되거나 제거된다.According to the present invention, the width of the guide pin is relatively large so that it is relatively firmly fixed to the chuck, so that the dropping of the guide pin from the chuck is minimized. Accordingly, abnormal deposition of the wafer due to the instability of the wafer is minimized or eliminated.

이하, 본 발명에 따른 반도체 제조 장치의 척히터를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, a chuck heater of a semiconductor manufacturing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

본 발명과 종래 기술과 비교한 이점은 첨부된 도면을 참조한 상세한 설명과 특허청구범위를 통하여 명백하게 될 것이다. 특히, 본 발명에 따른 반도체 소자의 제조 장치는 특허청구범위에서 잘 지적되고 명백하게 청구된다. 그러나, 본 발명에 따른 반도체 소자의 제조 장치는 첨부된 도면과 관련해서 다음의 상세한 설명을 참조함으로써 가장 잘 이해될 수 있다. 도면에 있어서 동일한 참조부호는 다양한 도면을 통해서 동일한 구성요소를 나타낸다.Advantages over the present invention and prior art will become apparent through the description and claims with reference to the accompanying drawings. In particular, a device for manufacturing a semiconductor device according to the present invention is well pointed out and claimed in the claims. However, the apparatus for manufacturing a semiconductor device according to the present invention can be best understood by referring to the following detailed description with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements throughout the various drawings.

(실시예)(Example)

도 4는 본 발명의 실시예에 따른 반도체 제조 장치의 척히터를 도시한 단면 도이다. 도 4를 참조하면, 본 실시예의 반도체 제조 장치, 가령 화학기상증착 장치의 척히터(100)는 웨이퍼(W)가 장착되는 디스크 형태의 척(120)이 있고, 척(120)의 상면에는 웨이퍼(W) 둘레에 인접하여 웨이퍼(W)의 둘레를 지지하여 웨이퍼(W)를 척(120)에 고정시키는 복수개의 가이드핀(140)이 구비된다. 가이드핀(140)은 화학기상증착 공정의 고온에 의해서도 변형이 일어나지 않으며 절연성 재질인 세락믹(ceramic)으로 구성되는 것이 바람직하다.4 is a cross-sectional view illustrating a chuck heater of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Referring to FIG. 4, the chuck heater 100 of the semiconductor manufacturing apparatus, such as a chemical vapor deposition apparatus, according to the present embodiment has a disk-shaped chuck 120 on which a wafer W is mounted, and a wafer is disposed on an upper surface of the chuck 120. A plurality of guide pins 140 are provided to support the circumference of the wafer W adjacent to the circumference of the wafer to fix the wafer W to the chuck 120. The guide pin 140 is not deformed even by the high temperature of the chemical vapor deposition process, it is preferable to be composed of a ceramic material (ceramic).

도 5는 본 발명의 실시예에 따른 반도체 제조 장치의 척히터에 있어서 가이드핀을 도시한 사시도이다. 도 5를 참조하면, 가이드핀(140)은 가로폭(w1)이 세로폭(w2)에 비해 비교적 크고 웨이퍼(W)의 둘레의 형태와 부합하는 곡선형태의 몸체부(140a)를 갖는다. 몸체부(140a)의 가로폭(w1)은 설계에 따라 임의값을 갖는데, 웨이퍼(W)의 둘레를 어느 정도 넓은 범위에 걸쳐 감쌀 수 있기에 충분한 길이를 갖는 것이 바람직하다. 그리고, 몸체부(140a)의 곡률은 웨이퍼(W)의 둘레의 곡률과 동일한 값을 갖는 것이 웨이퍼(W)를 더욱 견고히 지지하는데 바람직하다. 몸체부(140a)의 상부는 몸체(140a)의 가로폭(w1)과 세로폭(w2) 각각에 비해 크고 양측단부에 돌출부(140c)를 갖는 머리부(140b)가 있다. 머리부(140b) 역시 몸체부(140a)의 곡률과 동일한 곡률을 갖는 것이 바람직하다.5 is a perspective view illustrating the guide pin in the chuck heater of the semiconductor manufacturing apparatus according to the embodiment of the present invention. Referring to FIG. 5, the guide pin 140 has a curved body portion 140a having a relatively wide width w1 compared to the vertical width w2 and matching the shape of the circumference of the wafer W. Referring to FIG. The width w1 of the body portion 140a has an arbitrary value according to the design, and preferably has a length sufficient to wrap the circumference of the wafer W over a certain wide range. In addition, the curvature of the body portion 140a having the same value as the curvature of the circumference of the wafer W is preferable to support the wafer W more firmly. The upper portion of the body portion 140a is larger than the width w1 and the width w2 of the body 140a, respectively, and has a head 140b having protrusions 140c at both ends. The head 140b also preferably has the same curvature as the curvature of the body 140a.

도 6은 본 발명의 실시예에 따른 반도체 제조 장치의 척히터에 있어서 척을 도시한 평면도이다. 도 6을 참조하면, 본 실시예의 가이드핀(140)은 가로폭(w1)이 웨이퍼(W)의 둘레를 비교적 많은 범위에 걸쳐 감쌀 수 있기에 충분하도록 비교적 크고 웨이퍼(W)의 곡선형 둘레와 부합하는 곡선형태이므로 종래에 비해 그 갯수를 줄일 수 있다. 웨이퍼(W)의 둘레에 등간격으로 배열된 대략 3개 정도의 가이드핀(140)으로도 웨이퍼(W)를 지지하기에 족함에 부족이 없을 것이다. 그리고, 가이드핀(140)의 가로폭(w1)이 비교적 커서 척(120)에 상대적으로 견고히 고정되어, 가이드핀(140)의 척(120)으로부터의 탈락이 최소화된다. 이에 따라, 웨이퍼(W)의 지지 불안정성에 따른 웨이퍼(W)의 이상증착 현상이 최소화되거나 제거된다.6 is a plan view illustrating the chuck in the chuck heater of the semiconductor manufacturing apparatus according to the embodiment of the present invention. Referring to FIG. 6, the guide pin 140 of the present embodiment is relatively large enough to fit the curved circumference of the wafer W so that the width w1 can cover the circumference of the wafer W over a relatively large range. Since the shape of the curve can be reduced compared to the conventional number. Even about three guide pins 140 arranged at equal intervals around the wafer W may not be sufficient to support the wafer W. In addition, the width w1 of the guide pin 140 is relatively large and firmly fixed to the chuck 120, so that the dropping from the chuck 120 of the guide pin 140 is minimized. Accordingly, the abnormal deposition phenomenon of the wafer W due to the instability of the support of the wafer W is minimized or eliminated.

이상의 상세한 설명은 본 발명을 예시하는 것이다. 또한 전술한 내용은 본 발명의 바람직한 실시 형태를 나타내고 설명하는 것에 불과하며, 본 발명은 다양한 다른 조합, 변경 및 환경에서 사용할 수 있다. 그리고, 본 명세서에 개시된 발명의 개념의 범위, 저술한 개시 내용과 균등한 범위 및/또는 당업계의 기술 또는 지식의 범위 내에서 변경 또는 수정이 가능하다. 전술한 실시예들은 본 발명을 실시하는데 있어 최선의 상태를 설명하기 위한 것이며, 본 발명과 같은 다른 발명을 이용하는데 당업계에 알려진 다른 상태로의 실시, 그리고 발명의 구체적인 적용 분야 및 용도에서 요구되는 다양한 변경도 가능하다. 따라서, 이상의 발명의 상세한 설명은 개시된 실시 상태로 본 발명을 제한하려는 의도가 아니다. 또한 첨부된 청구범위는 다른 실시 상태도 포함하는 것으로 해석되어야 한다.The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. And, it is possible to change or modify within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the written description, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

이상에서 상세히 설명한 바와 같이, 본 발명에 의하면, 가이드핀의 형태를 개선하여 가이드핀이 쉽게 빠지는 현상이 방지된다. 따라서, 가이드핀이 빠지게 됨으로써 야기되는 웨이퍼의 이상증착 현상을 줄이거나 억제할 수 있게 되어 공정 안정성이 향상되고 수율이 상승하는 효과가 있다. 게다가, 가이드핀의 수를 줄일 수 있고 설비유지보수에 소요되는 비용과 시간을 줄일 수 있는 효과와 설비의 가동률을 향상시킬 수 있는 효과가 있다.As described above in detail, according to the present invention, the phenomenon that the guide pin is easily removed by improving the shape of the guide pin. Therefore, it is possible to reduce or suppress the abnormal deposition phenomenon of the wafer caused by the guide pins being removed, thereby improving process stability and increasing yield. In addition, it is possible to reduce the number of guide pins, reduce the cost and time required for equipment maintenance, and improve the utilization rate of the equipment.

Claims (4)

웨이퍼를 장착하는 척과, 상기 척 상에 마련되어 상기 웨이퍼를 지지하는 복수개의 가이드핀을 포함하며, 상기 복수개의 가이드핀 각각은 상기 웨이퍼의 둘레와 동일한 곡률을 가지며 상기 웨이퍼의 둘레를 감싸는 형태인 것을 특징으로 하는 반도체 제조 장치의 척히터.And a plurality of guide pins provided on the chuck to support the wafer, wherein each of the plurality of guide pins has the same curvature as the circumference of the wafer and surrounds the circumference of the wafer. Chuck heater of a semiconductor manufacturing apparatus. 제1항에 있어서,The method of claim 1, 상기 복수개의 가이드핀 각각은,Each of the plurality of guide pins, 가로폭이 세로폭에 비해 상대적으로 크고 상기 가로폭이 상기 웨이퍼의 둘레의 곡률과 동일한 곡률을 가지는 몸체부; 및A body portion having a width relatively larger than that of a height and having a curvature equal to a curvature of the circumference of the wafer; And 상기 몸체부의 가로폭 및 세로폭 각각에 비해 상대적으로 큰 가로폭과 세로폭을 가지며 양측단부에 돌출부를 갖는 머리부;A head having a larger horizontal width and a vertical width than the horizontal width and the vertical width of the body portion, and protruding portions at both side ends thereof; 를 포함하는 것을 특징으로 하는 반도체 제조 장치의 척히터.Chuck heater of a semiconductor manufacturing apparatus comprising a. 제2항에 있어서,The method of claim 2, 상기 각 가이드핀은 세라믹으로 구성된 것을 특징으로 하는 반도체 제조 장치의 척히터.Each guide pin is a chuck heater of the semiconductor manufacturing apparatus, characterized in that composed of a ceramic. 제1항에 있어서,The method of claim 1, 상기 복수개의 가이드핀은 상기 웨이퍼의 둘레에 등간격으로 배열된 것을 특징으로 하는 반도체 제조 장치의 척히터.The plurality of guide pins are chuck heater of the semiconductor manufacturing apparatus, characterized in that arranged at equal intervals around the wafer.
KR1020050130702A 2005-12-27 2005-12-27 Chuck heater of semiconductor manufacturing apparatus KR20070068745A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112820689A (en) * 2021-01-06 2021-05-18 长鑫存储技术有限公司 Floating pin, wafer bearing device and deposition equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112820689A (en) * 2021-01-06 2021-05-18 长鑫存储技术有限公司 Floating pin, wafer bearing device and deposition equipment

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