KR20070065684A - Antenna for generating plasma and manufacturing method of the same, plasma processing apparatus of the same - Google Patents

Abstract

An antenna for generating plasma is provided to guarantee uniformity of a plasma density in a plasma generating space by including a cap-type or volcano-type antenna. A plasma generating antenna includes an insulator window(310) and a cap-type antenna(320) placed on the insulator window. The center part(314) of the insulator window is cylindrical, the outer part(316) of the insulator window is a plate-type, and the entire section of the insulator window is a cap-type. A solenoid-type antenna(321) of the cap-type antenna is disposed in the center part of the insulator window, and a plate-type antenna(322) of the cap-type antenna is disposed in the outer part of the insulator window. A gas introduction hole(315) can be formed in the center part of the insulator window.

Description

Antenna for generating plasma and method for manufacturing same, and plasma processing apparatus using same

1A and 1B are diagrams illustrating a plasma processing apparatus using a general spiral antenna.

2A and 2B are diagrams illustrating a plasma processing apparatus using general cylindrical and hemispherical antennas.

3 is a cross-sectional view illustrating an antenna according to a first embodiment of the present invention.

4 is a cross-sectional view illustrating an antenna according to a second embodiment of the present invention.

5 is a cross-sectional view of a plasma processing apparatus using an antenna according to the first embodiment of the present invention shown in FIG.

6 is a cross-sectional view of a plasma processing apparatus using an antenna according to a second embodiment of the present invention shown in FIG.

<Description of Major Symbols in Drawing>

100, 200, 200b, 300, 400: plasma processing apparatus

110, 310, 410: insulator window

120: spiral antenna 220: induction coil

130, 230, 330, 430: power supply 220b: hemispherical coil

320: cap antenna 420: volcanic antenna

The present invention relates to an antenna, and more particularly, to an antenna for generating a plasma, a method of manufacturing the same, and a plasma processing apparatus using the antenna in a flat plate and solenoid combination type to ensure uniformity of plasma density in a plasma generation space. It is about.

1A and 1B are a cross-sectional view and a plan view of a plasma processing apparatus using a general spiral antenna.

As shown in FIGS. 1A and 1B, the plasma processing apparatus 100 includes a chamber 140 having an exhaust port (not shown) at a lower portion thereof and maintaining an internal environment in a vacuum state, and at the upper portion of the chamber. And a spiral antenna 120 and an insulator window 110 for plasma formation, and a power supply 130 for applying RF power to the antenna 120.

In addition, a heater 151 supporting the substrate 153 to be processed and providing a predetermined heat source to the substrate, and a support 152 supporting the heater 151 to move up and down inside the chamber 140. ).

In addition, one side of the chamber is provided with a gas supply port (not shown) through which the source gas for plasma generation is introduced.

Looking at the plasma generation process in the plasma processing apparatus 100 configured as described above are as follows. That is, when RF power is applied to the spiral antenna 120 formed on the insulator window 110, a magnetic field is formed by the RF current, and an electric field is formed in the chamber 140 by the magnetic field. At this time, the electrons in the chamber 140 are accelerated by the electric field to generate plasma.

2A and 2B illustrate a plasma processing apparatus using general cylindrical (solenoid) and hemispherical antennas.

As shown in FIG. 2A, in the plasma processing apparatus 200 using the solenoid type antenna, an induction coil 220 is wound around the wall of the chamber 240, and the induction coil is inside the chamber. It is wound so as to intersect an electric field formed between the support electrode 244 supporting the substrate 253 and the counter electrode 243 facing the space.

In addition, the induction coil 220 is connected to the external RF power supply 230, the refrigerant is supplied through the hollow tube 221 constituting the coil to cool the heated coil 220.

Reference numeral 242 denotes a source gas inlet port, 241 denotes an exhaust port, and 251 denotes a heater.

2B shows a plasma processing apparatus 200b using a hemispherical antenna as a variant of the cylindrical antenna, in which the hemispherical coil 220b is wound around dozens of windings, and the first winding is approximately the same as the substrate 253b. On the plane.

In addition, the hemispherical coil 220b is disposed on the chamber top plate 210b of stainless steel or the vacuum chamber 240b housed in the container 242b.

In addition, the container 242b has a semicircular shape, and the housing 243b covering the hemispherical coil 220b is coupled to the chamber top plate 210b.

As such, when the ICP (Inductive Coupled Plasma) antenna is conventionally configured as a spiral (FIGS. 1A and 1B) or a solenoid type (FIG. 2A), or a hemispherical shape that is a deformation of the solenoid.

However, in the case of the spiral antenna as shown in FIG. 1, since the number of coil turns and the radial density are concentrated in the center, the strength of the electric field in the center is stronger than that of the outer coil.

Therefore, there is a problem that plasma is concentrated in the center of the coil, and high frequency is also concentrated, resulting in non-uniformity of plasma density.

 In addition, even in the case of the solenoid type or hemispherical shape, although the plasma density and uniformity can be secured for a narrow area, it is difficult to secure the plasma density and uniformity when expanded in large areas.

The present invention has been made in order to solve the above problems, to provide an antenna for a plasma generation and a method for manufacturing the antenna that can ensure the uniformity of the plasma density in the plasma generation space by configuring the antenna in a flat plate and solenoid combination type The purpose is to.

In addition, the width of the wider toward the lower side is composed of an antenna of a volcano form a gentle slope, the plasma generated along the gentle slope is diffused for plasma generation that can maintain a uniform plasma density in the plasma generation space An antenna and a method of manufacturing the same are provided.

In addition, the present invention provides a plasma processing apparatus capable of maximizing surface treatment effects such as cleaning, deposition, and etching by securing uniformity of plasma density using the plasma generating antenna.

In order to achieve the above object, according to one aspect of the present invention, the insulator window having a central portion is cylindrical and the outer portion is a flat plate-like cap-shaped cross section, and is mounted on the insulator window, and the solenoid antenna is provided at the center portion. Provided is an antenna for generating a plasma comprising a cap-type antenna disposed in the outer portion is arranged a flat antenna.

In addition, a gas inlet is formed in the center of the insulator window.

In addition, at least one matching circuit is connected to the cap antenna, and when the matching circuit is configured as one, the plasma density generated by controlling the diameter of the solenoid or the number of turns of the coil is adjusted, and the matching circuit includes a plurality of matching circuits. If the configuration is characterized in that the plasma density generated by controlling the power of the at least one solenoid antenna and the power of the flat antenna individually.

In another preferred embodiment, there is provided an antenna for plasma generation comprising an insulator window having a gentle slope along its side and having a volcanic cross section in its entirety, and a volcano antenna having a solenoid antenna surrounding the insulator window with a coil. do.

In addition, a gas inlet is formed in the center of the insulator window.

In addition, at least one matching circuit is connected to the volcanic antenna, and when the matching circuit is configured as one, the plasma density generated by controlling the diameter of the solenoid or the number of turns of the coil is adjusted, and the matching circuit includes a plurality of matching circuits. If the configuration is characterized in that the plasma density generated by controlling the power of the at least one solenoid antenna and the power of the lower solenoid antenna separately.

According to another aspect of the invention, the center portion is cylindrical and the outer portion is a flat plate-shaped insulator window of the entire cross-sectional shape, the center portion of the solenoid coil wound to form a solenoid antenna, the outer portion is a flat plate It provides a method of manufacturing an antenna for plasma generation comprising the step of winding a coil to form a flat antenna.

Another preferred embodiment includes a step of forming an insulator window having a gentle slope along the side and having an overall volcano shape, and forming a solenoid antenna surrounding the insulator window with a coil. It provides a method of manufacturing.

The plasma processing apparatus according to the present invention includes a plasma generating space, an insulator window having a central portion formed on the plasma generating space, a cylindrical shape, and an outer portion having a flat plate shape, and having a cap shape in its entire cross section. A solenoid antenna is disposed and the outer portion includes a cap antenna having a flat antenna; The high frequency power is applied to the antenna to sequentially generate electrons in the plasma generating space by a magnetic field and an electric field to generate plasma.

Another preferred embodiment includes an insulator window having a plasma generating space, an insulator window having a gentle inclination along the side and having an overall volcano shape, and a solenoid antenna surrounding the insulator window with a coil; The high frequency power is applied to the antenna to sequentially generate electrons in the plasma generating space by a magnetic field and an electric field to generate plasma.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in the following description with reference to the accompanying drawings, the same or corresponding components are denoted by the same reference numerals, regardless of the reference numerals. Duplicate explanations will be omitted.

3 is a cross-sectional view illustrating an antenna according to a first embodiment of the present invention.

As shown in FIG. 3, the antenna according to the first embodiment of the present invention includes an insulator window 310 having a central portion 314 having a cylindrical shape and an outer portion 316 having a flat shape and having a cap shape in its entirety. A cap-type antenna 320 is disposed on the insulator window and has a solenoid antenna 321 disposed at the center portion and a flat antenna 322 disposed at the outer portion thereof.

That is, the shape of the antenna according to the first embodiment of the present invention is a cap-shaped structure in which a plurality of solenoid antennas in the center (upper) and a flat antenna are arranged in the outer (lower).

First, the entire cross section forms the insulator window 310 having a cap shape, and then, a solenoid coil is wound along the central portion 312 of the cylindrical shape, and the spirally or looped flat plate type is wound around the flat portion 316. The coil is wound to form a plurality of solenoid antennas 321 and a flat antenna 322.

In addition, the cap antenna 320 is connected to a power supply unit 330 for applying RF power through an inductance matching box (IMB) (332). At this time, the RF power is connected to one of the solenoid antenna 321 and the flat antenna 322, and the other is grounded.

In addition, the matching circuit 332 for adjusting the plasma density generated in the chamber 340 may be configured as a single (see Fig. 3) or a plurality. In this case, the matching circuit is commonly connected to both sides of the solenoid and the planar antennas 321 and 322, and the plasma density is adjusted by controlling the diameter of the solenoid or the number of turns of the coil. In addition, in the case of a plurality of configurations, the matching circuit 332 is individually connected to the solenoid antenna 321 and the flat antenna 322, respectively, and the power of the solenoid antenna and the power of the flat antenna are individually. The uniformity of the plasma density generated by the control is ensured.

In addition, a gas inlet 315 is formed at the center of the cap-shaped insulator window 310 to allow a gas to flow to form a centralized flow in the chamber 340.

Here, when RF power is applied to the cap antenna 320, a magnetic field is formed by RF current, and an RF electric field is formed in the chamber 340 by the RF magnetic field. This electric field causes the electrons in the chamber 340 to be accelerated to generate a plasma. At this time, the generated plasma is sprayed onto the substrate in the chamber 340 to perform a treatment process.

In addition, looking at the plasma generation process by the cap-type antenna 320 in more detail, the gas introduced through the gas inlet 315 is primarily generated by the solenoid antenna 321. Thereafter, the primarily generated plasma is diffused into a wide section in the chamber 340, and the plasma is secondary to both sides of the chamber 340 having relatively low plasma intensity through the planar antenna 322 disposed outside. To generate a uniform plasma density.

In addition, the density of the first generated plasma is determined by the solenoid radius and the number of coils, and the second generated plasma is determined by the coil radius and the number of times of the planar antenna 322.

4 is a cross-sectional view illustrating an antenna according to a second embodiment of the present invention.

As shown in FIG. 4, the antenna according to the second embodiment of the present invention includes an insulator window 410 having a gentle inclination along the side surface and having an overall volcano shape, and surrounding the insulator window with a coil. It has a volcanic antenna 420 in which the solenoid antenna is disposed.

That is, the antenna according to the first embodiment of the present invention has a shape having a gentle inclination from the upper side to the lower side and having a solenoid type antenna having a wider width at the lower side.

First, after forming an insulator window 410 having a volcanic cross section, a volcano antenna 420 is formed in which a radius of a solenoid becomes wider toward a lower side of the insulator window.

The power supply unit 430 for applying RF power is connected to the volcanic antenna 420 through a matching circuit (IMB) 432. At this time, one side of the volcano antenna 420 is connected to the RF power and the other side is grounded.

In addition, a gas inlet 415 is formed in the center of the volcanic insulator window 410 to allow the inlet gas to form a centralized flow in the chamber 440.

In addition, the gas introduced through the gas inlet 415 generates a plasma by the volcanic antenna 420, because the structure of the antenna is wider toward the lower side and volcanic form a gentle inclination, so that the gentle Since the plasma generated along one inclined surface is diffused, the plasma density can be maintained uniformly in the chamber.

In addition, the matching circuit 432 for adjusting the plasma density generated in the chamber 440 may be configured as a single or a plurality. At this time, in the case of one configuration, the plasma density is generated by controlling the diameter of the solenoid or the number of turns of the coil. In addition, in the case of a plurality of configurations, the upper solenoid antenna having a lower or lower slope is individually connected to the matching circuit 432, and the power of the upper solenoid antenna and the power of the lower solenoid antenna are individually separated. It is possible to ensure the uniformity of the plasma density generated by adjusting to.

5 is a cross-sectional view of the plasma processing apparatus 300 using the antenna according to the first embodiment of the present invention shown in FIG.

As shown in FIG. 5, the plasma processing apparatus 300 includes a shower head generating a neutralized beam by using a cap-shaped antenna 320, and a lower portion of the shower head in a vacuum state. And a chamber 350 for holding.

The shower head includes a plasma generator 340, a neutralized beam generator 360, a cooling unit 370, and a source gas injection unit 380.

In particular, the cap-shaped antenna 320 of the ICP method is disposed on the plasma generating unit 340. That is, a plurality of solenoid type antennas 321 and a plurality of flat type antennas 322 are disposed at the center, and the solenoid type antennas 321 generate plasma primarily and the flat type antennas 322 arranged at the outside. The secondary plasma is generated on both sides of the plasma generator 340 having a relatively low plasma density to maintain a uniform plasma density.

Hereinafter, the components will be described.

The plasma generator 340 induces plasma generation by the ICP method through the cap antenna 320.

The neutralization beam generator 360 includes a reflector 361 for reflecting plasma ions generated from the plasma generator and converting the plasma ions into a neutralization beam, and a plurality of pipes penetrating the reflector. An induction pipe 362 that moves to the processing space 351 is provided.

The cooling unit 370 distributes the cold water provided from the cold water supply unit 372 between the reflector 361 and the plurality of induction pipes 362 to cool the reflector and the plurality of induction pipes.

The source gas injection unit 380 is disposed below the cooling unit 370 to receive the source gas and separate the source gas supply route from the reaction gas supply route.

The chamber 350 has a processing space 351 in which the neutralization beam injected by the shower head and the source gas ions activated by the neutralization beam are injected, and is formed under the processing space and is formed by the source gas ions. A substrate (not shown) on which a thin film is to be deposited, and a heater 352 supporting the substrate and providing a predetermined heat source to the substrate are provided.

The reaction gas supply unit 302 adjusts the flow rate of the reaction gas supplied to the reaction gas inlet 305 from a gas source such as a reaction gas tank through a mass flow controller (MFC) and a plurality of inlet valves.

Also in the case of the source gas supply unit 382, the flow rate of the source gas supplied to the source gas inlet pipe 381 from a gas source such as a source gas tank is controlled through a flow controller (MFC) and a plurality of inlet valves.

A reaction gas cleaning system 301 is provided on the reaction gas inlet 305 in parallel with the reaction gas supply 302 to prevent the film from being deposited or to provide a cleaning gas for removing the deposited film.

Reference numeral 343 denotes a vacuum pump, which keeps the atmosphere inside the chamber in a vacuum state.

6 is a cross-sectional view of a plasma processing apparatus using an antenna according to a second embodiment of the present invention shown in FIG.

As shown in FIG. 6, the plasma processing apparatus 400 using the antenna according to the second embodiment of the present invention is the plasma processing apparatus 300 using the antenna according to the first embodiment of the present invention shown in FIG. 5. Since the configuration is similar to), the differences will be mainly described.

In the plasma processing apparatus 400 using the antenna according to the second exemplary embodiment of the present invention, the ICP type volcanic antenna 420 is disposed on the plasma generator 440. That is, since the antenna 420 is wider toward the lower side and has a volcanic shape that forms a gentle inclination, the plasma generated along the gentle inclined plane is diffused, so that the plasma density in the plasma generating unit 440 is uniform. To maintain.

In the above has been shown and described with respect to a preferred embodiment of the antenna for generating plasma according to the present invention, the present invention is not limited to the above-described predetermined embodiment, the present invention without departing from the gist of the invention claimed in the claims Of course, various applications and modifications can be made by those skilled in the art.

In addition, the plasma processing apparatus using the antenna may be applied to various surface treatment apparatuses such as deposition and etching.

As described above, the plasma generating antenna according to the present invention constitutes a cap-type or volcanic antenna to ensure uniformity of plasma density in the plasma generating space.

That is, in the case of the cap-type antenna, the plasma is primarily generated by the solenoid-type antenna, and the plasma is generated secondarily on both sides of the plasma generating space through the flat-panel antenna disposed at the outer side to reduce the density of the plasma generated as a whole. Keep it even.

In addition, in the case of the volcanic antenna, since the plasma generated along the gentle slope is diffused, the plasma density can be maintained uniformly in the plasma generation space.

In addition, a plurality of solenoid type antennas or flat plate type antennas can be individually controlled by configuring a matching circuit constituting an antenna in a single or plural to maintain a uniform plasma density in the plasma generation space.

In addition, by forming a gas inlet in the center to form a centralized flow (flow) than when the side inlet to ensure the uniformity of the plasma density.

In addition, by using the plasma generating antenna to ensure the uniformity of the plasma density can be utilized in various plasma surface treatment apparatus, such as cleaning, deposition, etching.

Claims (10)

The insulator window has a cylindrical shape in the center portion and a flat portion in the shape of a cap, and a cap-shaped antenna mounted on the insulator window, the solenoid antenna being disposed in the center portion, and the flat antenna being disposed in the outer portion. Plasma generating antenna, characterized in that. The method of claim 1, And a gas inlet is formed at the center of the insulator window. The method of claim 1, At least one matching circuit is connected to the cap antenna, When the matching circuit is composed of one, the diameter of the solenoid or the number of turns of the coil is controlled to adjust the plasma density. When the matching circuit is composed of a plurality of powers of the at least one solenoid antenna and the Plasma generating antenna, characterized in that for controlling the plasma density generated by individually controlling the power of the planar antenna. And an insulated window having a gentle slope along the side and having an overall volcano shape, and a volcano antenna disposed with a solenoid antenna surrounding the insulator window with a coil. The method of claim 4, wherein And a gas inlet is formed at the center of the insulator window. The method of claim 4, wherein At least one matching circuit is connected to the volcano antenna, When the matching circuit is composed of one, the diameter of the solenoid or the number of turns of the coil is controlled to control the plasma density. When the matching circuit is composed of a plurality of powers of at least one upper solenoid type antenna and Plasma generating antenna, characterized in that for adjusting the density of the plasma generated by controlling the power of the solenoid antenna lower side. Forming a cap-shaped insulator window having a central cross section and a flat outer section with a cap shape; The center portion of the solenoid coil wound to form a solenoid antenna, the outer portion of the plasma coil manufacturing method comprising the step of forming a flat antenna. Forming an insulator window having a gentle slope along the side and having an overall volcano in cross section; And forming a solenoid antenna surrounding the insulator window with a coil. Plasma generating space, An insulator window having a central portion formed on the plasma generating space and a cylindrical portion having a flat portion and having a cap shape in its entirety; A cap-shaped antenna seated on the insulator window and having a solenoid antenna disposed at the center portion and a flat antenna disposed at the outer portion thereof; And applying high frequency power to the antenna to sequentially generate electrons in the plasma generating space by a magnetic field and an electric field to generate plasma. Plasma generating space, An insulator window having a gentle slope along the side and having a volcanic cross section throughout, A volcanic antenna disposed with a solenoid antenna surrounding the insulator window with a coil; And applying high frequency power to the antenna to sequentially generate electrons in the plasma generating space by a magnetic field and an electric field to generate plasma.

Images