KR20070059514A - Magnetic induction device for metal target of ion plating apparatus - Google Patents

Magnetic induction device for metal target of ion plating apparatus Download PDF

Info

Publication number
KR20070059514A
KR20070059514A KR1020050118434A KR20050118434A KR20070059514A KR 20070059514 A KR20070059514 A KR 20070059514A KR 1020050118434 A KR1020050118434 A KR 1020050118434A KR 20050118434 A KR20050118434 A KR 20050118434A KR 20070059514 A KR20070059514 A KR 20070059514A
Authority
KR
South Korea
Prior art keywords
metal target
magnetic flux
fixed
magnetic induction
ion plating
Prior art date
Application number
KR1020050118434A
Other languages
Korean (ko)
Other versions
KR100727646B1 (en
Inventor
장희선
문창성
훈 범
Original Assignee
주식회사 탑테크이십일
장희선
문창성
훈 범
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 탑테크이십일, 장희선, 문창성, 훈 범 filed Critical 주식회사 탑테크이십일
Priority to KR1020050118434A priority Critical patent/KR100727646B1/en
Publication of KR20070059514A publication Critical patent/KR20070059514A/en
Application granted granted Critical
Publication of KR100727646B1 publication Critical patent/KR100727646B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A magnetic induction device for a metal target of an ion plating equipment is provided to reduce the manufacturing cost by enabling the entire metal target to be uniformly evaporated such that utilization efficiency of the metal target is increased, and improve coating efficiency of matrices by uniformly maintaining metal ions in a larger region. A magnetic induction device(100) for a metal target of an ion plating equipment comprises: a rectangular fixed plate(110) connected to one face of the metal target; and a magnetic induction line(120) for forming a magnetic field when an electric current is applied to the magnetic induction line from the outside, wherein the magnetic induction line comprises first and second magnetic induction wires(121,123), and is fixed to an inner side of the fixed plate. The fixed plate comprises a fixed rim(111) of which an edge portion is protruded, and first and second cores(113,115) which are projectingly formed at an inner side of the fixed rim, and to which the first and second magnetic induction wires are fixed respectively. The second core has through holes(115a) formed therein such that a cooling pipe is inserted into the through holes to prevent the metal target and the fixed plate from being heated during arc discharge. The fixed rim of the fixed plate has a plurality of clamping holes(111a) formed therein such that bolts are clamped to the clamping holes when fixing the fixed plate to the metal target.

Description

이온 플레이팅장치의 금속타겟용 자속유도구{MAGNETIC INDUCTION DEVICE FOR METAL TARGET OF ION PLATING APPARATUS}MAGNETIC INDUCTION DEVICE FOR METAL TARGET OF ION PLATING APPARATUS}

도 1은 본 발명에 따른 금속타겟용 자속유도구가 설치되어 있는 이온 플레이팅장치를 개략적으로 보인 측면도이고,1 is a side view schematically showing an ion plating apparatus in which the magnetic flux tool for metal targets according to the present invention is installed,

도 2는 본 발명에 따른 자속유도구의 사시도이고,Figure 2 is a perspective view of the magnetic flux tool according to the invention,

도 3은 본 발명에 따른 자속유도구의 단면도이고,3 is a cross-sectional view of the magnetic flux tool according to the present invention,

도 4는 본 발명에 따른 자속유도구의 평면도이다.4 is a plan view of the magnetic flux tool according to the present invention.

♠ 도면의 주요 부분에 대한 부호의 설명 ♠♠ Explanation of symbols for the main parts of the drawing ♠

10 : 이온 플레이팅장치 1 : 챔버10 ion plating apparatus 1 chamber

13 : 금속타겟 100 : 자속유도구13: metal target 100: magnetic flux tool

110 : 고정플레이트 120 : 자속유도선110: fixed plate 120: magnetic flux guide line

본 발명은 이온 플레이팅 장치에 관한 것으로 더욱 상세하게는 자속이 금속타겟에 균일하게 유도되도록 하여 금속타겟 전체가 균일하게 증발되게 함으로써, 금속타겟의 사용효율을 향상시켜 원가를 절감할 수 있는 이온 플레이팅장치의 금속 타겟용 자속유도구에 관한 것이다.The present invention relates to an ion plating apparatus, and more particularly, by allowing magnetic flux to be uniformly induced to the metal target so that the entire metal target is uniformly evaporated, the ion play which can reduce the cost by improving the use efficiency of the metal target. A magnetic flux tool for a metal target of a casting device.

금형이나 공구 등의 모재에 우수한 내마모성이나 내식성, 내열성 및 고경도 등의 특별한 기능을 부여하기 위하여 소재의 표면피복층을 코팅하는 방법이 많이 이용되고 있다. 이러한 코팅방법으로 종래에는 전기도금이나 화학도금과 같은 습식코팅법을 주로 이용하였으나, 최근에 들어서는 중금속 등의 유해한 폐액을 배출을 하지 않을 뿐만 아니라 비교적 값싼 코팅재료를 사용할 수 있다. 또한, 복잡하고 굴곡이 많은 형상의 모재 표면에도 원하는 피복층을 용이하게 코팅할 수 있도록 화학증착법(CVD)이나 물리증착법(PVD)을 이용한 건식코팅법이 많이 이용되고 있다. In order to give a special function such as excellent wear resistance, corrosion resistance, heat resistance and high hardness to a base material such as a mold or a tool, a method of coating a surface coating layer of a material is widely used. Conventionally, as a coating method, a wet coating method such as electroplating or chemical plating is mainly used, but in recent years, it is possible not only to discharge harmful waste liquids such as heavy metals, but also to use relatively inexpensive coating materials. In addition, a dry coating method using a chemical vapor deposition (CVD) or a physical vapor deposition (PVD) has been widely used to easily coat a desired coating layer on the surface of the base material having a complex and curved shape.

화학증착은 열이나 플라즈마, 자외선 등의 에너지원을 하나 또는 두 성분이상으로 이루어진 화합물을 결합하여 가열된 고온상태의 모재 표면 위에서 하나 또는 그 이상의 기체성분이 열분해, 환원, 산화 등의 화학반응에 의해 기상으로부터 증기압이 낮은 물질을 생성하여 모재에 박막을 형성시키는 방법이다. 그리고, 물리증착은 진공의 분위기에서 타겟금속에 강한 전류를 훌려 이온을 생성시키고, 이 이온들이 기재에 증착됨으로써 박막의 코팅층을 형성시키는 방법으로 스퍼터링, 이온 플레이팅, 활성화 반응증착 등이 있다. Chemical vapor deposition is performed by chemical reactions such as pyrolysis, reduction, and oxidation of one or more gaseous components on the surface of a heated high temperature base material by combining compounds consisting of one or two components of energy sources such as heat, plasma, and ultraviolet rays. It is a method of forming a thin film on the base material by producing a low vapor pressure material from the gas phase. In addition, physical vapor deposition involves sputtering, ion plating, and activating reaction deposition as a method of forming a coating layer of a thin film by generating strong ions by attracting a strong current to a target metal in a vacuum atmosphere.

이중 이온 플레이팅(Ion plating)은 진공 용기 내에 증착시키고 싶은 금속을 증발시켜 피가공물인 모재의 표면에 금속피막을 증착시키거나, 또는 반응가스를 진공 용기 내에 도입하여 피가공물인 모재의 표면에 두 성분으로 된 화합물을 형성시키는 방법이 널리 사용되고 있다. 그리고 이온 플레이팅을 할 때 금속타겟을 아크 방전하여 금속 이온을 생성시키고, 금속타겟에서 생성된 이온을 제어하기 위하여 자석이 사용되고 있다.Double ion plating involves depositing a metal film on the surface of the workpiece to be evaporated by evaporating the metal to be deposited in the vacuum vessel, or by placing a reaction gas into the vacuum vessel to place it on the surface of the workpiece. Methods of forming compounds of components are widely used. In the ion plating, a metal target is arc discharged to generate metal ions, and a magnet is used to control ions generated in the metal target.

그런데, 상기와 같은 종래의 이온 플레이팅 장치는 자석이 금속타겟에서 떨어져 있으므로 인하여 자속이 금속타겟에 균일하게 유도되지 못하고 한곳에만 집중되어 자속이 많이 집중되는 부위만 급속하게 증발되므로 금속타겟을 오래 사용할 수 없는 문제점을 내포하고 있다. 즉, 금속타겟의 사용효율이 저하되는 문제점이 있는 것이다.However, in the conventional ion plating apparatus as described above, since the magnet is separated from the metal target, the magnetic flux is not uniformly induced in the metal target, but is concentrated only in one place, so that only a portion where the magnetic flux is concentrated rapidly evaporates. It contains a number of problems. That is, there is a problem that the use efficiency of the metal target is lowered.

또한, 금속타겟이 일정부위에서만 많은 이온을 증발시키게 되면 금속이온이 플레이팅장치의 내부에서 균일하게 퍼지지 못하여 모재의 코팅효율이 저하되는 문제점도 발생하고 있는 실정이다.In addition, when the metal target evaporates a large number of ions only at a certain portion, there is a problem that the metal ions do not spread evenly inside the plating apparatus, thereby deteriorating the coating efficiency of the base material.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 자속이 금속타겟에 균일하게 유도되도록 하여 금속타겟 전체가 균일하게 증발되게 함으로써, 금속타겟의 사용효율을 증가시켜 원가를 절감할 수 있는 이온 플레이팅장치의 금속타겟용 자속유도구를 제공하는데 있다.The present invention is to solve the problems of the prior art as described above, an object of the present invention is to allow the magnetic flux is uniformly induced in the metal target to uniformly evaporate the entire metal target, thereby increasing the use efficiency of the metal target cost To provide a magnetic flux tool for the metal target of the ion plating apparatus to reduce the.

본 발명의 다른 목적은 금속이온이 넓은 영역에서 균일하게 유지되도록 하여 모재의 코팅효율을 향상시킬 수 있는 이온 플레이팅장치의 금속타겟용 자속유도구를 제공하는데 있다. Another object of the present invention to provide a magnetic flux tool for the metal target of the ion plating apparatus that can improve the coating efficiency of the base material by maintaining the metal ion uniformly in a wide area.

상기와 같은 목적을 달성하기 위한 본 발명에 따른 이온 플레이팅장치의 금속타겟용 자속 유도구는 금속타겟의 일면에 결합되는 판 형상의 고정플레이트와, 외부로부터 전류가 인가되면 자장이 형성되도록 코일이 권선되어 형성되며 상기 고정플레이트에 고정되어 있는 자속유도선을 포함하여 구성되어 있는 것을 특징으로 한다.Magnetic flux induction hole for the metal target of the ion plating apparatus according to the present invention for achieving the above object is a plate-shaped fixed plate coupled to one surface of the metal target, the coil is wound so that a magnetic field is formed when the current is applied from the outside And a magnetic flux guide line that is formed and fixed to the fixing plate.

여기서, 상기 자속 유도선은 상기 코일이 사각의 링 형태를 가지도록 권선되어 있는 제1 자속유도선과, 사각의 링 형태를 가지며 상기 제1 자속유도선의 내측에 위치되는 제2 자속유도선으로 이루어져 있으며, 상기 고정플레이트는 상기 금속타겟에 고정할 수 있도록 볼트가 체결되는 체결공이 형성되며, 상기 제1 및 제2 자속유도선이 상기 고정플레이트의 외측으로 노출되지 않도록 테두리부가 돌출되어 형성되는 고정테와, 상기 고정테의 내측으로 소정간격 이격된 상기 고정플레이트의 부위에서 돌출되어 형성되며 상기 제1 자속유도선이 삽입되어 고정되는 제1 코어와, 상기 제1 코어의 내측으로 소정간격 이격된 상기 고정플레이트의 부위에서 돌출되며 상기 제2 자속유도선이 삽입되어 고정되는 제2 코어로 이루어진다.Here, the magnetic flux induction line is composed of a first magnetic flux induction line wound so that the coil has a rectangular ring shape, and a second magnetic flux induction line having a rectangular ring shape and positioned inside the first magnetic flux induction line. The fixing plate is formed with a fastening hole to which the bolt is fastened to be fixed to the metal target, and a fixed frame formed by protruding an edge portion so that the first and second magnetic flux induction lines are not exposed to the outside of the fixing plate. And a first core protruding from an area of the fixing plate spaced a predetermined distance into the fixing frame and having the first magnetic flux guide line inserted thereinto, and the fixed spaced predetermined distance inside the first core. Protruding from the portion of the plate and consists of a second core is inserted and fixed to the second magnetic flux induction line.

이하, 본 발명에 따른 이온 플레이팅장치의 금속타겟용 자속 유도구에 대한 바람직한 실시예를 첨부된 도면들에 의거하여 상세하게 설명한다.Hereinafter, a preferred embodiment of the magnetic flux induction hole for the metal target of the ion plating apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

도 1을 참조하면, 이온 플레이팅장치(10)는 진공 상태의 챔버(1)를 구비하며, 챔버(1)의 내부에는 모재(11)를 거치할 수 있는 지그(5)가 하나 이상 고정되어 있는 회전플레이트(3)가 모터(도시생략)에 의하여 회전가능하게 설치되어 있다. 지그(5)는 회전플레이트(3)에 회전가능하게 고정되어 있는 회전축(7)과, 이 회전축(7)과 함께 회전되며 모재(11)가 탑재되는 거치대(9)로 구성되어 있다. 회전플레이트(3) 및 지그(5)가 챔버(1) 내부에서 회전되는 것은 플라즈마 상태로 존재하는 금 속이온이 모재(11)의 표면 균일하게 코팅되게 하기 위함이다.Referring to FIG. 1, the ion plating apparatus 10 includes a chamber 1 in a vacuum state, and at least one jig 5 for mounting the base material 11 is fixed inside the chamber 1. The rotating plate 3 is rotatably installed by a motor (not shown). The jig 5 is composed of a rotating shaft 7 rotatably fixed to the rotating plate 3, and a holder 9 which is rotated together with the rotating shaft 7 and on which the base material 11 is mounted. The rotation of the rotating plate 3 and the jig 5 in the chamber 1 is to ensure that the metal ions present in the plasma state are uniformly coated on the surface of the base material 11.

챔버(1)의 내측면에는 아크 방전에 의하여 표면이 증발되면서 금속이온을 생성시키는 금속타겟(13)이 마련되며, 금속타겟(13)은 촉발전극(도시생략)에 의하여 아크가 발생된다. 금속타겟(13)의 일면에는 자장을 형성하여 금속타겟(13)에서 균일하게 금속이온이 형성되도록 방전 아크를 구속하는 자속유도구(100)가 결합되어 있는데, 이를 도 2 내지 도 4를 참조하여 상세히 설명한다.The inner surface of the chamber 1 is provided with a metal target 13 for generating metal ions while the surface is evaporated by the arc discharge, the metal target 13 is an arc is generated by the trigger electrode (not shown). One surface of the metal target 13 is coupled to the magnetic flux tool 100 for confining the discharge arc to form a magnetic field to form a metal ion uniformly in the metal target 13, with reference to Figures 2 to 4 It explains in detail.

도 2 내지 도 4에 도시되어 있는 바와 같이, 자속유도구(100)는 금속타겟(13)의 일면에 결합되는 사각 판 형상의 고정플레이트(110)와, 외부로부터 전류가 인가되면 자장이 형성되는 자속유도선(120)으로 이루어져 있다. 자속유도선(120)은 코일이 사각 링 형태로 권선되어 있는 제1 및 제2 자속유도선(121, 123)으로 이루어져 있으며, 고정플레이트(110)의 내측에 부착되어 고정된다.As shown in Figures 2 to 4, the magnetic flux tool 100 is a square plate-shaped fixed plate 110 is coupled to one surface of the metal target 13, and a magnetic field is formed when a current is applied from the outside It consists of a magnetic flux guide line (120). The magnetic flux guide line 120 is composed of first and second magnetic flux guide lines 121 and 123 in which coils are wound in a rectangular ring shape, and is fixed to the inner side of the fixing plate 110.

고정플레이트(110)의 가장자리부에는 고정플레이트(110)를 금속타겟(13)에 고정함과 동시에 제1 및 제2 자속유도선(121, 123)이 고정플레이트(110)의 외측으로 노출되지 않도록 테두리부가 돌출된 고정테(111)가 형성되어 있다. 고정테(111)의 내측으로 소정간격 이격된 고정플레이트(110)의 부위에는 제1 자속유도선(121)의 내면이 삽입되어 고정되도록 제1 코어(113)가 돌출되어 형성된다. 제1 코어(113)의 내측으로 소정간격 이격된 고정플레이트(110)의 부위에는 제2 자속유도선(123)의 내면이 삽입되어 고정되도록 제2 코어(115)가 돌출되어 형성된다. 즉, 고정플레이트(110)는 테두리부가 돌출된 고정테(111)와, 고정테(111)의 내측에서 돌출되어 형성되며, 제1 및 제2 자속유도선(121, 123)이 각각 고정되는 제1 및 제2 코어(113, 115)로 이루어져 있는 것이다.At the edge of the fixing plate 110, the fixing plate 110 is fixed to the metal target 13 and the first and second magnetic flux induction lines 121 and 123 are not exposed to the outside of the fixing plate 110. Fixed frame 111 is formed with a protruding edge. The first core 113 is formed to protrude so that the inner surface of the first magnetic flux induction line 121 is inserted into and fixed to the portion of the fixing plate 110 spaced a predetermined distance into the fixing frame 111. The second core 115 protrudes from a portion of the fixing plate 110 spaced a predetermined distance into the first core 113 so that the inner surface of the second magnetic flux induction line 123 is inserted and fixed. That is, the fixing plate 110 is formed to protrude from the inside of the fixed frame 111 and the fixed frame 111, the edge of the fixed frame 111, the first and second magnetic flux guide lines 121, 123 are respectively fixed It consists of the first and second cores 113 and 115.

본 발명의 실시예에 따른 자속유도구(100)의 제1 및 제 2 코어(113, 115)의 높이는 고정테(111)의 높이 보다 낮게 형성되는 것이 바람직한데, 이는 자속유도구(100)를 금속타겟(13)에 고정하였을 때 제1 및 제2 자속유도선(121, 123)이 고정되어 있는 고정플레이트(110)의 내측을 완전하게 밀폐시키기 위함이다.The heights of the first and second cores 113 and 115 of the magnetic flux tool 100 according to the embodiment of the present invention are preferably formed to be lower than the height of the fixing frame 111. This is to completely seal the inside of the fixing plate 110 to which the first and second magnetic flux induction lines 121 and 123 are fixed when fixed to the metal target 13.

한편, 금속타겟(13)의 아크 방전시 금속타겟(13) 및 고정플레이트(110)가 가열되는 것을 방지하기 위하여 제2 코어(115)에는 냉각관(130)이 삽입되도록 관통공(115a)들이 더 형성되어 있으며, 고정플레이트(110)의 고정테(111)에는 고정플레이트(110)를 금속타겟(13)에 고정할 때 볼트를 체결할 수 있도록 다수의 체결공(111a)이 형성되어 있다.Meanwhile, in order to prevent the metal target 13 and the fixed plate 110 from being heated during the arc discharge of the metal target 13, the through holes 115a are inserted into the second core 115 so that the cooling tube 130 is inserted. Further formed, a plurality of fastening holes (111a) are formed on the fixed frame 111 of the fixed plate 110 to fasten the bolt when fixing the fixed plate 110 to the metal target (13).

상기와 같이 구성되어 있는 본 발명에 따른 자속유도구(100)는 외부로부터 제1 및 제2 자속유도선(121, 123)에 전압이 인가되면 자기력선이 형성되고, 이 자속에 의하여 금속타겟(13)의 아크 방전시 발생되는 금속이온이 금속타겟(13)의 표면에서 방출되어 모재(11)에 증착되는 것이다.In the magnetic flux tool 100 according to the present invention configured as described above, a magnetic force line is formed when a voltage is applied to the first and second magnetic flux induction lines 121 and 123 from the outside, and the metal target 13 is formed by the magnetic flux. The metal ions generated at the arc discharge of the c) are released from the surface of the metal target 13 and deposited on the base material 11.

이때, 제1 및 제2 자속유도선(121, 123)에 의하여 금속타겟(13)의 표면 전체에 자장 분포가 균일하고 안정적으로 이루어지게 되어 금속타겟(13)의 표면 전체에서 증발이 균일하게 발생된다.At this time, the magnetic field distribution is uniformly and stably formed on the entire surface of the metal target 13 by the first and second magnetic flux induction lines 121 and 123 so that evaporation occurs uniformly on the entire surface of the metal target 13. do.

이상에서는, 본 발명의 바람직한 실시예를 설명하였지만, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 변경 및 변형한 것도 본 발명의 권리범위에 속함은 당연하다. In the above, preferred embodiments of the present invention have been described, but modifications and variations within the scope without departing from the technical spirit of the present invention by those skilled in the art belong to the scope of the present invention Of course.

이상에서 설명한 바와 같이 본 발명에 따른 이온 플레이팅장치의 금속타겟용 자속유도구는 제1 및 제2 자속유도선에 의하여 금속타겟에 자속이 균일하게 유도되어 아크 방전시 금속타겟의 표면이 전체적으로 균일하게 증발되므로, 금속타겟의 사용효율을 증가시켜 원가를 절감할 수 있는 효과가 있다. 또한, 자속유도구에 의하여 금속이온이 넓은 영역에서 균일하게 유지되므로, 모재의 코팅효율을 향상되는 이점도 있다.As described above, the magnetic flux tool for the metal target of the ion plating apparatus according to the present invention has the magnetic flux induced uniformly in the metal target by the first and second magnetic flux induction lines so that the surface of the metal target is uniform even during arc discharge. Since it is evaporated, the cost can be reduced by increasing the use efficiency of the metal target. In addition, since the metal ions are uniformly maintained in a large area by the flux tool, there is an advantage of improving the coating efficiency of the base material.

Claims (4)

금속타겟의 일면에 결합되는 판 형상의 고정플레이트와;A plate-shaped fixed plate coupled to one surface of the metal target; 상기 고정플레이트의 후면에 고정되어 있으며, 내부에는 코일이 권선되어 외부로부터 전류가 인가되면 자장이 형성되는 자속유도선이 마련되어 있는 자속유도구를 포함하여 구성되어 있는 것을 특징으로 하는 이온 플레이팅장치의 금속타겟용 자속 유도구.It is fixed to the back of the fixed plate, the inside of the ion plating apparatus characterized in that it comprises a magnetic flux tool having a magnetic flux induction line is formed in the magnetic field is formed when the coil is wound around the current Magnetic flux guide for metal targets. 제 1 항에 있어서,The method of claim 1, 상기 자속 유도선은 상기 코일이 사각 링 형태를 가지도록 권선되어 있는 제1 자속유도선과, 사각 링 형태를 가지며 상기 제1 자속유도선의 내측에 위치되는 제2 자속유도선으로 이루어져 있는 것을 특징으로 하는 이온 플레이팅장치의 금속타겟용 자속 유도구.The magnetic flux induction line comprises a first magnetic flux induction line wound around the coil to have a rectangular ring shape, and a second magnetic flux induction line having a rectangular ring shape and positioned inside the first magnetic flux induction line. Magnetic flux guide port for metal target of ion plating device. 제 2 항에 있어서,The method of claim 2, 상기 고정플레이트는 상기 금속타겟에 고정할 수 있도록 볼트가 체결되는 체결공이 형성되며, 상기 제1 및 제2 자속유도선이 상기 고정플레이트의 외측으로 노출되지 않도록 테두리부가 돌출되어 형성되는 고정테와, 상기 고정테의 내측으로 소정간격 이격된 상기 고정플레이트의 부위에서 돌출되어 형성되며 상기 제1 자속유도선이 삽입되어 고정되는 제1 코어와, 상기 제1 코어의 내측으로 소정간격 이격 된 상기 고정플레이트의 부위에서 돌출되며 상기 제2 자속유도선이 삽입되어 고정되는 제2 코어를 가지는 것을 특징으로 하는 이온 플레이팅장치의 금속타겟용 자속 유도구.The fixing plate is formed with a fastening hole is fastened to the bolt to be fixed to the metal target, the fixing frame is formed by protruding the edge portion so that the first and second magnetic flux induction line is not exposed to the outside of the fixing plate, A first core protruding from a portion of the fixing plate spaced a predetermined distance into the fixing frame and having the first magnetic flux induction line inserted and fixed, and the fixing plate spaced a predetermined distance into the first core Protruding from the portion of the magnetic flux induction hole for the metal target of the ion plating apparatus, characterized in that it has a second core is inserted and fixed. 제 1 항 내지 제 3 항에 있어서,The method of claim 1, wherein 상기 고정플레이트에는 냉각관이 삽입되도록 관통공이 더 형성되어 있는 것을 특징을 하는 이온 플레이팅장치의 금속타겟용 자속 유도구.The fixing plate is a magnetic flux guide port for the metal target of the ion plating apparatus, characterized in that the through-hole is further formed so that the cooling tube is inserted.
KR1020050118434A 2005-12-06 2005-12-06 Magnetic induction device for metal target of ion plating apparatus KR100727646B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020050118434A KR100727646B1 (en) 2005-12-06 2005-12-06 Magnetic induction device for metal target of ion plating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050118434A KR100727646B1 (en) 2005-12-06 2005-12-06 Magnetic induction device for metal target of ion plating apparatus

Publications (2)

Publication Number Publication Date
KR20070059514A true KR20070059514A (en) 2007-06-12
KR100727646B1 KR100727646B1 (en) 2007-06-13

Family

ID=38355811

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050118434A KR100727646B1 (en) 2005-12-06 2005-12-06 Magnetic induction device for metal target of ion plating apparatus

Country Status (1)

Country Link
KR (1) KR100727646B1 (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MXPA05006762A (en) * 2002-12-19 2005-09-08 Unaxis Balzers Aktiengesellsch Vacuum arc source comprising a device for generating a magnetic field.

Also Published As

Publication number Publication date
KR100727646B1 (en) 2007-06-13

Similar Documents

Publication Publication Date Title
JP5306198B2 (en) Electrical insulation film deposition method
JP6101238B2 (en) Coating apparatus for coating a substrate and method for coating a substrate
KR100559285B1 (en) Apparatus for steering the arc in a cathodic arc coater
KR20170100068A (en) Apparatus and method for uniform deposition
JP2017133111A (en) Cooling ring for physical gas phase deposition chamber target
US20020144903A1 (en) Focused magnetron sputtering system
US9127356B2 (en) Sputtering target with reverse erosion profile surface and sputtering system and method using the same
TW201321539A (en) Cylindrical magnetron sputtering cathode
JP2009531545A (en) Coating equipment
TWI296813B (en) Improvements in and relating to magnetron sputtering
KR20110039238A (en) Cathode unit and spattering device having same
KR100530545B1 (en) Apparatus for driving the arc in a cathodic arc coater
KR102533881B1 (en) single beam plasma source
KR100727646B1 (en) Magnetic induction device for metal target of ion plating apparatus
US8052852B2 (en) Magnetron sputtering cathode mechanism
KR101030338B1 (en) vacuum vapor deposition device
KR100327835B1 (en) Appartus for physical vapor deposition and sputtering
KR20210025981A (en) Magnetic flux induction device for metal target with adjustable magnetic flux density and ion plating device using it
KR101105842B1 (en) Magnetron sputtering apparatus for toroidal target
JP2014169469A (en) Vacuum film deposition device
KR102045209B1 (en) Apparatus for pvd coating having current controlled magnetron
JPH1136063A (en) Arc type evaporating source
KR100793569B1 (en) Magnetron sputtering apparatus
KR20160089952A (en) Cylindrical Sputtering Cathode
KR20210094226A (en) Operation method of turntable fixing jig of vacuum deposition apparatus

Legal Events

Date Code Title Description
A201 Request for examination
N231 Notification of change of applicant
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20130530

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20140603

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20150602

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20160603

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20170601

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20190603

Year of fee payment: 13