KR20070055815A - Method of manufacturing an organic electroluminescent device - Google Patents

Abstract

The present invention relates to a method for manufacturing an organic EL device capable of reducing the manufacturing process steps. The organic electroluminescent device manufacturing method includes forming a first conductive layer on a substrate; Forming first insulating films on the first conductive layer; Removing anode portions of the first conductive layer in which the first insulating layers are not formed to form anode electrode layers; And forming a second insulating film between the anode electrode layers. In the method of manufacturing the organic EL device, since the second insulating layer is formed after forming the second insulating layer on the first insulating layer, the second insulating layer may be formed, thereby reducing the manufacturing process steps.

Organic electroluminescent element, insulating film, exposure, development

Description

Organic electroluminescent device manufacturing method {METHOD OF MANUFACTURING AN ORGANIC ELECTROLUMINESCENT DEVICE}

1 is a cross-sectional view showing a general organic EL device.

2A through 2J are cross-sectional views illustrating a process of manufacturing a conventional organic EL device.

3A to 3H are cross-sectional views illustrating a process of manufacturing an organic EL device according to an exemplary embodiment of the present invention.

The present invention relates to a method of manufacturing an organic electroluminescent device, and more particularly, to a method of manufacturing an organic electroluminescent device which can reduce the manufacturing process steps.

The organic electroluminescent device is a self-luminous device and generates light having a predetermined wavelength when a predetermined voltage is applied.

1 is a cross-sectional view showing a general organic EL device.

Referring to FIG. 1, the organic light emitting diode includes anode electrode layers 102, insulating layers 104, barrier ribs 106, organic layers 108, and cathode electrode layers 110.

The anode electrode layers 102 are deposited on the substrate 100 and are formed of an indium tin oxide film.

The insulating films 104 are formed between the anode electrode layers 102 to electrically separate the anode electrode layers 102.

The partitions 106 are formed on the insulating layers 104 and have overhang structures.

Organic layers 108 are deposited over anode electrode layers 102. The at least one organic material layer may include a hole transporting layer, an emission layer, and an electron transporting layer that are sequentially formed on the anode electrode layer.

Cathode electrode layers 110 are deposited on the organic layers 108.

When a positive voltage is applied to one of the anode electrode layers 102 and a negative voltage is applied to the cathode electrode layer, holes generated from the anode electrode layer are injected into the hole transport layer and electrons generated from the cathode electrode layer are It is injected into the electron transport layer.

Subsequently, the hole transport layer transports the injected holes to the light emitting layer, and the electron transport layer transports the injected electrons to the light emitting layer.

Subsequently, holes and electrons transported to the emission layer recombine, and light having a predetermined wavelength is generated in the process.

However, the color of the generated light varies according to the components of the organic material constituting the light emitting layer.

2A through 2J are cross-sectional views illustrating a process of manufacturing a conventional organic EL device.

Referring to FIG. 2A, a conductive layer 200 is deposited on the substrate 100.

Subsequently, a first insulating layer 202 made of a first insulating material is coated on the conductive layer 200. Here, the first insulating material is a photoresist.

Referring to FIG. 2B, a mask 204 is positioned over the first insulating layer 202, and then UV light is incident on the first insulating layer 202 through the mask 204. In this case, part of the UV light is blocked by the mask 204, and the rest is incident on the first insulating layer 202. That is, only a part 202b of the first insulating layer 202 is exposed. Here, the first insulating material is a positive photoresist, so that the bond chains of the molecules that make up the exposed portion 202b are weaker than before the exposure.

Referring to FIG. 2C, a first developer is applied to the first insulating layer 202 after exposure. In this case, since the bonding force of the molecules constituting the exposed portion 202b is weaker than that of the unexposed portion 202a, the exposed portion 202b of the first insulating layer 202 is removed by the first developer. do. As a result, the first insulating films 206 are formed on the conductive layer 200 with a predetermined pattern.

Referring to FIG. 2D, a portion of the conductive layer 200 in which the first insulating layers 206 are not formed is etched, so that the anode electrode layers 102 are formed on the substrate 100.

Referring to FIG. 2E, the first insulating layers 206 are removed by the second developer.

Referring to FIG. 2F, a second insulating layer 208 made of a second insulating material is coated on the substrate 100 and the anode electrode layers 102. Here, the second insulating material is a positive photoresist.

Referring to FIG. 2G, a mask 210 is positioned over the second insulating layer 208.

Subsequently, UV light is incident on the second insulating layer 208 through the mask 210. Thus, a portion 208a of the second insulating layer 208 is exposed and the remaining portion 208b is not exposed.

The second insulating material according to an embodiment of the present invention is a positive photoresist. Thus, the binding force of the molecules of the exposed portion 208a of the second insulating layer 208 is weaker than the binding force of the molecules of the unexposed portion 208b.

Referring to FIG. 2H, a third developer is applied to the second insulating layer 208, and thus the exposed portion 208a of the second insulating layer 208 that is weak in bonding strength is removed. As a result, second insulating films 104 are formed between the anode electrode layers 102.

Referring to FIG. 2I, barrier ribs 106 are formed on the second insulating layers 104. In this case, the partitions 106 have an overhang structure as shown in FIG. 2I and are made of an insulating material.

Referring to FIG. 2J, an organic layer 108 is deposited on each anode electrode layer 102.

Subsequently, the cathode electrode layer 110 is deposited on the organic material layer 108. Here, the cathode electrode layer 110 is made of aluminum (Al).

In other words, in the conventional method of manufacturing the organic EL device, many processes such as one etching process, two exposure processes, three development processes, and one coating process have been performed until the second insulating layers 104 are formed. As a result, much time was required to manufacture the organic electroluminescent device.

Therefore, there is a need for an organic electroluminescent device manufacturing method capable of reducing processes for manufacturing an organic electroluminescent device.

An object of the present invention is to provide a method for manufacturing an organic electroluminescent device which can reduce the process.

In order to achieve the above object, the organic electroluminescent device manufacturing method according to an embodiment of the present invention comprises the steps of forming a first conductive layer on a substrate; Forming first insulating films on the first conductive layer; Removing anode portions of the first conductive layer in which the first insulating layers are not formed to form anode electrode layers; And forming a second insulating film between the anode electrode layers.

In the method of manufacturing an organic EL device according to the present invention, since the second insulating layer is formed by forming the second insulating layer on the first insulating layer and then removing the first insulating layer, the manufacturing process step can be reduced.

Hereinafter, with reference to the accompanying drawings will be described in detail preferred embodiments of the organic electroluminescent device manufacturing method according to the present invention.

3A to 3H are cross-sectional views illustrating a process of manufacturing an organic EL device according to an exemplary embodiment of the present invention.

Referring to FIG. 3A, a conductive layer 302 is formed on the substrate 300.

Subsequently, a first insulating layer 304 made of a first insulating material is formed on the conductive layer 302, for example, coated.

The conductive layer 302 according to the embodiment of the present invention is formed of an indium tin oxide film.

The first insulating material according to the embodiment of the present invention is a photoresist.

Referring to FIG. 3B, a mask 306 having a predetermined pattern is positioned on the first insulating layer 304.

Subsequently, UV light is incident on the first insulating layer 304 through the mask 306. In this case, part of the UV light is blocked by the mask 306, and the rest is incident on the first insulating layer 304.

That is, a portion 304a of the first insulating layer 304 is exposed, so that the bond chains of the molecules that make up the portion 304a are changed.

The first insulating material according to one embodiment of the invention is a negative photoresist, so that the bond chains of the molecules making up the exposed portion 304a are stronger than before the exposure.

If the first insulating material according to another embodiment of the present invention is a positive photoresist, a new mask that exposes a portion 304b of the first insulating layer 304 and does not expose the other portion 304a. Is used.

Hereinafter, a process of manufacturing the organic electroluminescent device using the first insulating material as a negative photoresist will be described in detail.

Referring to FIG. 3C, a first developer is applied to the first insulating layer 304 after exposure. In this case, since the bonding force of the molecules constituting the exposed portion 304a is stronger than that of the unexposed portion 304b, the unexposed portion 304b of the first insulating layer 304 is formed by the first developer. Removed. As a result, the first insulating films 308 are formed on the conductive layer 302 with a predetermined pattern.

That is, the first insulating layer 304 is patterned, and as a result, the first insulating layers 308 are formed on the conductive layer 302.

Referring to FIG. 3D, a portion 302a of the conductive layer 302 in which the first insulating layers 308 are not formed is etched, so that the anode electrode layers 310 are formed on the substrate 300.

Referring to FIG. 3E, a second insulating layer 312 made of a second insulating material is formed between the anode electrode layers 310 and on the first insulating layers 308.

The second insulating material according to an embodiment of the present invention is a metal oxide such as silicon oxide (SiO ₂ ), silicon nitride (SiN _X ), or the like.

The metal oxide is capable of a deposition process unlike photoresist due to the material properties.

Therefore, when the second insulating material is made of the metal oxide, the second insulating layer 312 may be formed between the anode electrode layers 310 and on the first insulating layers 308 by a deposition process.

According to another embodiment of the present invention, the second insulating material is a photoresist.

The photoresist has an efficient coating process due to the material properties. Therefore, when the second insulating material is a photoresist, the second insulating layer 312 may be formed between the anode electrode layers 310 and on the first insulating layers 308 by a coating process.

However, in general, since the photoresist contains moisture, an additional process may be necessary when the second insulating material is made of photoresist. Therefore, the second insulating material is preferably metal oxide.

Referring to FIG. 3F, a second developer is applied to the substrate shown in FIG. 3E. Here, since the second developer develops the first insulating layers 308, the first insulating layers 308 are removed by the second developer. Accordingly, the portion 312a of the second insulating layer 312 formed on the first insulating layers 308 is also removed along with the first insulating layers 308. As a result, second insulating layers 312b are formed between the anode electrode layers 310.

Referring to FIG. 3G, barrier ribs 314 are formed on the second insulating layers 308. In this case, the partitions 314 have an overhang structure as shown in FIG. 3G.

In addition, the partitions 314 are made of an insulating material.

Referring to FIG. 3H, an organic layer 316 is deposited on each anode electrode layer 310.

Subsequently, a cathode electrode layer 318 is deposited on the organic layer 316.

The cathode electrode layer 318 according to the embodiment of the present invention is a conductor such as aluminum (Al).

Hereinafter, the organic electroluminescent device manufacturing method of the present invention and the conventional organic electroluminescent device manufacturing method will be compared.

In the conventional organic electroluminescent device manufacturing method, one etching step, two exposure steps, three developing steps, and one coating step are performed from the first insulating layer to the second insulating film after the first insulating layer is formed.

On the other hand, in the method of manufacturing the organic electroluminescent device of the present invention, after the first insulating layer 304 is formed, one etching step, one exposure step, two developing steps, and one until the second insulating film 308 is formed. Burn coating or deposition process is performed. That is, in the organic electroluminescent device manufacturing method of the present invention, the process step is reduced than in the conventional organic electroluminescent device manufacturing method. Therefore, the time required for manufacturing the organic electroluminescent device can be reduced.

Preferred embodiments of the present invention described above are disclosed for purposes of illustration, and those skilled in the art having various ordinary knowledge of the present invention may make various modifications, changes, and additions within the spirit and scope of the present invention. Additions should be considered to be within the scope of the following claims.

As described above, in the method of manufacturing the organic EL device according to the present invention, the second insulating film is formed by removing the first insulating film after forming the second insulating layer on the first insulating film, thereby reducing the manufacturing process step. There is this.

Claims (10)

Forming a first conductive layer over the substrate; Forming first insulating films on the first conductive layer; Removing anode portions of the first conductive layer in which the first insulating layers are not formed to form anode electrode layers; And And forming a second insulating film between the anode electrode layers. The method of claim 1, wherein the forming of the first insulating layers is performed. Forming a first insulating layer made of a first insulating material on the first conductive layer; And And patterning the first insulating layer to form the first insulating layers. The method of claim 1, wherein the at least one first insulating layer is formed of a photoresist. The method of claim 1, wherein the anode electrode layers are formed by etching a portion of the first conductive layer in which the first insulating layers are not formed. The method of claim 1, wherein the forming of the second insulating film, Forming a second insulating layer made of a second insulating material on the substrate between the anode electrode layers and the first insulating films; And And removing the first insulating layers. The method of claim 5, wherein the second insulating layer is formed on the substrate between the anode electrode layers and the first insulating layers by a deposition process. The method of claim 1, wherein the second insulating film is made of a photoresist. The method of claim 1, wherein the second insulating layer is made of metal oxide. The method of claim 8, wherein the metal oxide is silicon oxide (SiO ₂ ) or silicon nitride (SiN _X ). According to claim 1, The organic electroluminescent device manufacturing method, Forming an organic material layer on at least one anode electrode layer from which the first insulating film is removed; Forming a cathode electrode layer on the organic material layer; And And forming a partition wall on the second insulating film.

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