KR20070055674A - Accelerated ion implanter using laser plasma beam and pulse shock wave - Google Patents

Abstract

The present invention relates to a laser-plasma pulse shock wave accelerated ion implanter used in an impurity ion doping process for conductors, semiconductors, and nonconductor samples, from microscopic specimens to large specimens, from atmospheric pressure to high vacuum. And accelerate the plasma to the electric field type or magnetic field type, which is an ion beam transport system component, and generate a pulse shock wave at the sample surface with another laser beam to inject the accelerated ions into the sample surface. As the surface of the sample is injected into the surface of the sample, the surface of the sample becomes a conductor, and in addition to the ion acceleration velocity, laser-plasma pulse shock wave acceleration in which ions induce deep pulse shock wave acceleration injection into the sample is combined with the voltage applied to the special electrode. It relates to an ion implanter.

Laser Plasma, Ion Acceleration, Pulse Shock Wave, Ion Implantation, Thermal Diffusion, Insulator-Conductor Phase Transition Theory, Ion Injector

Description

Accelerated Ion Implanter using Laser Plasma Beam and Pulse Shock Wave}

1 is a conceptual diagram of a pulse shock wave accelerated cation injector showing a laser plasma ion beam shape

2 is a conceptual diagram of a pulse shock wave accelerated anion (electron beam) injector showing a laser plasma ion beam shape.

3 is a photograph of the ion implanted non-conductive polymer polymer sample by laser plasma pulse wave acceleration ion implanter

Explanation of symbols for main parts of the drawings

DESCRIPTION OF SYMBOLS 1 Laser apparatus 2 Gas supply apparatus 3 Ion generating apparatus 4 Grid 5 Laser beam 6 Focusing lens 7 Condensing laser beam 8 Sample outer plasma distribution 9 Sample inner plasma distribution 10 Sample 11 Pulse Shockwave Laser Beam 12: Vacuum Device 13: Ion Mass Separation Electromagnet

The present invention relates to a laser plasma cation, proton, and electron beam pulse shock wave accelerated ion implanter used in the doping process of various impurity ions in the manufacture of insulators, semiconductors, and conductor devices. Laser plasma pulses for insulators, semiconductors, and conductor manufacturing that have diversified ion types, ion currents, and energies so that they can be applied to many different types of ion implantation processes with the same device at the same time. Shock wave acceleration ion implantation apparatus.

In the conventional ion implanter (Korean Patent 1996-032599), the ion beam focusing system, deflection meter, scanning system, etc., which are components of the ion beam transporting system, which are required for lossless transporting and scanning of the ion beam drawn from the ion source to the target system, are in principle an electric field. The electric field was used to control the movement of ions under high vacuum. This method is easy to apply to small parts, but the device is too large to be applied to very small parts or large parts. As a key problem, it is possible to inject accelerated ions by applying electrodes to conductors such as metals, but it is almost impossible to inject ions into non-conductors or semiconductors such as polymers, plastics, etc. Although it can be injected by accelerating the nanoparticles, only a small amount of nano or terra thickness is injected into the surface, and due to the high energy, the tissues in the region to be implanted are damaged, physical properties, or color changes due to high energy. .

The object of the present invention is to overcome the problems of the prior art as described above, which is equipped with a simple vacuum device and can be applied to a process as well as a very small sized component based on laser plasma generation. Using plasma with advantages such as remote control and high power, plasma can be formed to transport large current ion beams with uniform density from tens to hundreds of microwatts. The purpose is to increase the depth of ion penetration by applying a special microelectrode inside. The basic principle of implanting ions into the surface of a non-conductor and semiconductor surface, which was almost impossible with the conventional method, is the energy generated by the gap or thermal diffusion of the material by the pulse shock wave to the ions being accelerated in the area where the plasma is formed. By injecting ions into the band, it is conductorized by the insulator-conductor, semiconductor-conductor phase transition phenomenon (Korean Patent 10-0433623, 10-0467330, Published Patent 10-2005-0038834) to apply a platinum / silicide electrode and to a conventional ion implanter. There is an advantage that can double the penetration depth of 300nm level injected by ion acceleration. When the ion is injected into PET or plastic by the conventional ion implantation method, the result of improving the conductivity of the insulator is observed in other patents (Korean Patent 10-0500040). By using this principle, the principle of injecting a small number of ions initially induces phase transition from the insulator to the conductor and injects a large amount of ions by applying a proper temperature and voltage.

In order to achieve the above object, the present invention provides a plasma pulse shock wave ion generating device, a plasma generating device, ion mass separation electromagnet and grid, ion acceleration tube for forming a high voltage on the center line of the laser beam, light condensing lens, light traveling direction switching It consists of a fiber tube and a fine needle-shaped electrode connection part in the sample.

Hereinafter, the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a conceptual diagram of a pulse shock wave accelerated cation injector in which the shape of a laser plasma ion beam of the present invention is shown, showing the main components and the trajectory of an ion beam, plasma generation and distribution outside the sample, and thermal diffusion and distribution inside the sample.

2 shows a conceptual diagram of a pulse shock wave accelerated anion (electron beam) injector showing a laser plasma ion beam shape.

3 is a photograph of a shape in which nitrogen ions are injected into a nonconductive polymer composite by a laser plasma pulse shock wave accelerated ion implanter in the form of spots.

The laser plasma pulse shock wave acceleration ion beam generation, acceleration, transport, and configuration of the target system of the device are as follows.

The laser plasma pulse shock wave ion source 1 is a high-power laser and two low-power lasers (Figs. 1, 2, 1, 2) are used. If necessary, the beam may be separated using a beam split with one laser. In addition, when a high power laser is relatively expensive and difficult to apply to a process, devices such as arc and high frequency microwaves, which can realize plasma formation at a relatively low cost, may be used.

The ion source to be injected into the specimen to ions is supplied to the gas supply device (3) used may be all ions by supplying a variety of gases using the common circle ^{O +, H +, N +} , Cr +, Cl Various ions, such as ⁺ and Xe ⁺ , are separated and used by the ion mass separation electromagnet 13.

As the cations are generated, the anions generated by the entrapment are captured by the grid 4 and grounded.

When electron beam injection is mainly used, as shown in FIG. 2, a cathode is applied to the grid 4 to collect cations and flow them out.

When injecting the mixed gas, the optical characteristic variable ion mass separation electromagnet (13) is used to rotate a stationary track to have only a specific kind and charge among various kinds of ions emitted from this source, and to put a slit at the rear of the mass separation electromagnet. Only ions of are allowed to pass through.

Accelerator tube 4 exists in the center of the laser in the plasma state and unnecessary ions are separated from the passage by the ion mass separation electromagnet 13 and the ions separated along the path of the electrode plate 20 subjected to high contact pressure to the ion implantation depth. Accelerate or decelerate with moderate energy.

The accelerated ion beam travels in one direction (vertical direction) along the laser plasma passage 5 and is focused by the light focusing lens 6 having a hole in the center as necessary. According to the configuration of the device, if you want to change the direction of the laser light can be switched to the desired angle using the optical fiber tube.

The high-temperature plasma generated by the high-power laser (1) for periodic pulsed plasma generation or any other method floats on the front surface of the sample, and the sample 10 periodically absorbs the heat of the high-temperature plasma, thereby causing thermal diffusion into and out of the sample. A temperature gradient is formed periodically by the pulses (7, 8, 9).

When the ions generated on the upper surface or the front surface of the sample are accelerated by the high voltage and fly toward the sample, pressure is applied to the lattice structure void or energy bandwidth into the sample by applying pressure to the ions with the pulse shock wave 11 laser 2. .

The path through which the ion beam reaches the sample constitutes a high vacuum vacuum system 12 at atmospheric pressure according to the type of implanted ions on the sample.

As the ion is injected into the sample, the electrical conductivity is improved and the conductivity is improved. The special electrode again accelerates the ions and places them in the gap or energy band width deep inside the pulse shockwave. In order to prevent the ions injected into the sample from escaping, positional movement and cold gas are sprayed and quenched in a short time.

In the same way as described above, the ion can be implanted into the line part by deeply injecting ions into the micro point and moving the position.

3 is a pulse shock wave accelerated cation injector showing a laser-plasma ion beam shape in a polymer polymer sample, which is an insulator, and accelerates to 50-100 KeV by plasmaizing ambient gas nitrogen, and generates a pulse shock wave with a 3-5W laser. It is a photograph injecting nitrogen ion into the shape.

Compared with the conventional ion implanter, it has a simple vacuum device to improve the workability. It has the efficiency of condensing, the excellent remote control, and the device characteristic of the laser that can handle the path freely using the optical system. It is convenient to construct a device that can use a variety of energy light sources and can use ion acceleration energy from low energy to high energy.

Conventional ion implanters have been able to overcome the technical limitations by pushing the technical limitations of injecting ions in nano-thickness into the surface of non-conductors or semiconductors with laser-plasma pulse shock waves.

As a result, a technical foundation for effectively implanting nonconductors and semiconductors has been prepared, compared with conventional ion implanters that effectively implant only conductor samples.

By making this technical leap, Insulator-Metal Phase Transition Hole Driven MIT theory is applied, electrode is applied to the site where small amount of cation is injected to conduct non-conductor and semiconductor to accelerate the ion inside the sample, which can be injected deep inside the sample. I could get the effect.

Therefore, the insulator-metal phase transition MIT theory is not only applicable to the micro, nano, and tera device-level domains in the microworld, but also shows that the theory can be applied in the macro world. By applying this theory, it can be used as a source technology device that can contribute to the technical development throughout the industry, so the expected effect is enormous.

Claims (4)

Laser plasma ion sources, additional ion sources, ion mass separation electromagnets, acceleration tubes, laser core paths, lower ion beam transport systems, from atmospheric to high vacuum, from point to line to point Laser plasma pulse shock wave acceleration ion implanter used in the impurity ion doping process of conductor, semiconductor, and non-conductor samples which injects ions deeper by applying electrodes to the inner part of the sample to be ionized as the ion is injected by pulse shock wave acceleration. The method according to claim 1, wherein the laser center acceleration tube is used as an acceleration tool, the optical fiber tube and the optical system are used to form a path freely, and the pulses are floated on the front surface of the sample so as not to melt or damage due to the high-temperature plasma. Laser-plasma pulse shock wave accelerated ion implanter, characterized in that to induce thermal diffusion into the sample to inject acceleration ions with a pulse shock wave. The method of claim 1, wherein the special electrode used in the region where the ion is injected into the thermal diffusion region in the sample by the pulse shock wave, the platinum-silicide as a nano-sized special electrode implanted with ions to improve the hardness and electrical conductivity Laser plasma pulse shock wave accelerated ion implanter, characterized in that using an alloy. The semiconductor sample according to claim 1, wherein the material is capable of ion implantation with a laser plasma pulse shock wave accelerated ion implanter, and is a nonconductor in a nonconductor polymer, polymer, PET, plastic, ceramic, glass, DNA, protein, cell, etc. And a laser plasma pulse shock wave accelerated ion implanter applied to the entire conductor sample.

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