KR20070048319A - Semiconductor device manufacturing equipment having gas ring - Google Patents

Abstract

The present invention relates to a semiconductor device manufacturing facility equipped with a gas ring. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus for cleaning a gas ring provided in a plasma deposition apparatus for forming a material film on a wafer, wherein the plurality of process gas supply nozzle portions provided in the gas ring face each other in a horizontal direction. Provided is a cleaning tool in which two cleaning liquid injection holes are formed. The process gas supply nozzle and the process gas supply nozzle of the process gas supply nozzle are mounted by spraying the cleaning liquid through the cleaning liquid injection hole of the cleaning tool and performing a 1: 1 cleaning process on the process gas supply nozzle of the gas ring. The inside of the coupling hole can be cleaned more clean. As a result, wafer loss caused by particle down problems and particle down can be minimized. In addition, it is possible to reduce the overall process loss time by shortening the cleaning time for the gas ring, and to reduce the production cost by preventing wear of the gas ring and the process gas supply nozzle part.

Semiconductor, HDP, Gas Rings, Cleaning, Particles

Description

Semiconductor device manufacturing equipment having gas ring

1 shows a typical high density plasma CVD apparatus to which the present invention is applied.

2 illustrates a planar structure of the gas ring provided in FIG. 1.

3 and 4 illustrate a cross-sectional structure and a perspective structure in an A-A 'direction of an oxygen supply nozzle of the gas ring provided in FIG. 2.

5 and 6 show a cross-sectional structure and a perspective structure in the direction B-B 'of the gas ring provided in FIG.

7 shows a perspective structure of a cleaning tool 120 according to a preferred embodiment of the present invention.

FIG. 8 shows a cross-sectional structure of the cleaning tool 120 shown in FIG.

9 shows a state in which a cleaning tool 120 according to a preferred embodiment of the present invention is applied to a gas ring 108 of a semiconductor device manufacturing facility.

<Description of Symbols for Main Parts of Drawings>

100: process chamber 102: upper electrode

104: lower electrode 106: chuck assembly

108: gas ring 110: process gas supply nozzle

110a: oxygen supply nozzle 110b: silene supply nozzle

112: oxygen supply pipe 114: oxygen supply nozzle coupling hole

116: Silene supply piping 118: Silene supply nozzle coupling hole

120: cleaning tool 122: cleaning liquid injection pipe

124: cleaning liquid injection hole 126: cleaning liquid

The present invention relates to a semiconductor device manufacturing facility, and more particularly to a semiconductor device manufacturing facility for depositing a material film on the wafer.

In general, semiconductor devices are manufactured by depositing and patterning thin films that perform various functions on the wafer surface to form a variety of circuit geometries. Impurity ion implantation process for injecting impurity of Group 5, deposition process for forming material film on semiconductor substrate, etching process for forming material film formed by the deposition process in desired pattern, and interlayer insulating film deposited on wafer surface Afterwards, it consists of several unit processes such as a chemical mechanical polishing (CMP) process, which removes steps by polishing wafer surfaces in a batch, and a wafer cleaning process for removing impurities. Therefore, the semiconductor device is manufactured by selectively repeating the above various unit processes. Then, the wafer is mounted in a cassette in plural units until the semiconductor device is completed, and then transferred into a manufacturing facility, ie, a process chamber, in which each unit process is performed.

Meanwhile, in the deposition process of forming a material film on the semiconductor substrate, the chemical vapor deposition (CVD) process using high density plasma (HDP) is performed using a silicon oxide film (SiO ₂₎ between the metal layer and the metal layer. It is used in an oxide film deposition process for forming an insulating layer such as) and filling the space between the metal layers. After the material layer having a desired thickness is formed on the wafer by using the high density plasma CVD apparatus, the cleaning process is performed on the gas ring to which the gas for plasma formation is supplied, including inside the chamber.

Typically, the gas ring is formed with about 24 process gas supply nozzles to which process gas for plasma formation is supplied, and nozzle holes to which the process gas supply nozzles are mounted. For the gas ring, the cleaning process is performed after completing the high density plasma CVD process for about 16000 wafers.

However, the cleaning process was conventionally performed by dipping the gas ring into a bath containing a cleaning liquid such as pure water. However, when using the bath as described above, particles such as polymers attached to the surface of the gas ring can be removed, but there is a problem in that the area inside the gas ring cannot be completely removed. As such, when the cleaning process for the gas ring does not proceed smoothly, particles attached to the gas ring may not be completely removed, resulting in particle down, resulting in contamination of the wafer. In addition, if the gas ring is not completely cleaned in this way, the gas supply amount is nonuniform and the thickness uniformity (step coverage) of the CVD film due to the high density plasma is deteriorated. As a result, there is a cumbersome problem in that the cleaning process for the gas ring is restarted or the process is stopped and replaced with another gas ring.

In addition, in order to solve the above problems caused by the inability to clean the inside of the gas ring, up to about 24 process gas supply nozzles were separated from the gas ring, and a cleaning process was performed. However, when the process gas supply nozzle is frequently separated from the gas ring, wear occurs, thereby shortening the life of the process gas supply nozzle as well as the gas ring.

As such, when the process gas supply nozzle is detached from the gas ring one by one or the process is stopped in the middle to replace the gas ring, the process loss time and production cost increase, resulting in adverse effects on the productivity and reliability of the semiconductor device. It is expected to be added.

SUMMARY OF THE INVENTION An object of the present invention for solving the above conventional problems is to provide a semiconductor device manufacturing facility that can more efficiently clean the gas ring.

Another object of the present invention is to provide a semiconductor device manufacturing facility capable of minimizing particle down.

Another object of the present invention is to provide a semiconductor device manufacturing facility which can prevent a decrease in the thickness uniformity of a material film deposited by plasma.

Another object of the present invention is to provide a semiconductor device manufacturing facility capable of minimizing an increase in production cost due to gas ring replacement.

Another object of the present invention is to provide a semiconductor device manufacturing facility that can minimize the process loss time to further improve the productivity and reliability of the semiconductor device.

A semiconductor device manufacturing apparatus according to the present invention for achieving the above objects comprises a process chamber for partitioning the processing space of the sealed atmosphere; An upper electrode formed in an upper region of the process chamber and to which high frequency power is applied for plasma formation; A lower electrode formed in a lower region of the process chamber and to which a high frequency power corresponding to the upper electrode is applied; A gas ring including a process gas supply nozzle unit for supplying a process gas to a space between the upper electrode and the lower electrode; And a cleaning tool part which is injected into the process chamber to clean the gas ring after completing the plasma process, and has a cleaning liquid spray hole formed in the horizontal direction opposite to the process gas supply nozzle part provided in the gas ring. It is characterized by.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention. The present invention is not limited to the embodiments disclosed below, but can be embodied in various other forms without departing from the scope of the present invention, and only the embodiments allow the disclosure of the present invention to be complete and common knowledge It is provided to fully inform the person of the scope of the invention.

1 shows a high density plasma CVD apparatus to which the present invention is applied.

Referring to FIG. 1, the high-density plasma CVD apparatus has a process chamber 100 that defines a processing space in a sealed atmosphere. In the upper region of the process chamber 100, a dome-shaped upper electrode 102 to which high frequency power is applied is provided. In the lower region of the upper electrode 102, a wafer (not shown) introduced into the process chamber 100 is fixed to the upper electrode 102 so as to face the upper electrode 102, and a high frequency corresponding to the upper electrode 102. A chuck assembly 106 is formed that includes a bottom electrode 104 to which power is applied.

In addition, a gas ring 108 is formed at an end point of the upper electrode 102. The gas ring 108 is a process gas supply device for supplying a process gas for plasma formation between the upper electrode 102 and the lower electrode 104, and a plurality of process gas supply nozzles disposed at uniform intervals ( 110 is formed. Here, the process gas supply nozzle 110 there is arranged in the gas ring of cyclic structure, such as oxygen (O ₂₎ 8 of the oxygen feed nozzle and four days alkylene for supplying a gas (SiH ₄₎ 16 for supplying a gas It consists of three silen supply nozzles.

2 shows a planar structure of the gas ring 108 provided with the process gas supply nozzle unit 110.

Referring to FIG. 2, eight oxygen supply nozzles 110a are arranged according to the shape of the gas ring forming the ring shape. Then, one each of the xylene supply nozzles 110b for supplying the xylene gas to the left and right sides of the oxygen supply nozzle 110a is disposed. Accordingly, the one oxygen supply nozzle 110a and the pair of xylene supply nozzles 110b constitute one process gas supply nozzle unit 110. The oxygen supply nozzles 110a and the xylene supply nozzles 110b are connected to the oxygen supply pipe 112 and the xylene supply pipe 116, respectively.

Meanwhile, FIGS. 3 and 4 show cross-sectional structures and perspective structures in the AA ′ direction with respect to the oxygen supply nozzles 110a, and FIGS. 5 and 6 illustrate the xylene supply nozzles 110b. The cross-sectional structure and perspective structure in the BB 'direction are shown.

First, referring to FIGS. 3 and 4, a pipe 112 for oxygen supply is formed in the gas ring 108. In addition, a coupling hole 114 to which the oxygen supply nozzle 110a is mounted is formed on the inner wall of the gas ring 108. Therefore, the oxygen gas injected through the oxygen supply pipe 112 is supplied into the process chamber through the oxygen supply nozzle 110a.

Meanwhile, referring to FIGS. 5 and 6, a pipe 116 for supplying silene is formed in the gas ring 108. In addition, the inner wall of the gas ring 108 is formed with a coupling hole 118 to which the silene supply nozzle 110b is mounted. Therefore, the xylene gas injected through the oxygen supply pipe 116 is supplied into the process chamber through the xylene supply nozzle 110b.

Therefore, the oxygen and xylene gas injected through the oxygen supply nozzles 110a and the xylene supply nozzles 110b are converted into plasma to deposit a material film on the wafer W loaded in the chamber. When the material film deposition process is completed, the gas ring 108 is cleaned.

In the cleaning process with respect to the gas ring 108, the oxygen supply nozzle 110a and the xylene supply nozzle 110b and the coupling holes 114 and 118 to which the nozzles are mounted are conventionally attached to the gas ring 108. The polymer could not be removed completely. As a result, various problems such as particle down and wafer loss occur.

Accordingly, the present invention provides a cleaning tool 120 as shown in FIGS. 7 and 8 to more fully proceed with the cleaning process for the gas ring 108.

7 illustrates a perspective structure of the cleaning tool 120, and FIG. 8 illustrates a cross-sectional structure of the cleaning tool 120.

7 and 8, the cleaning tool 120 has a circular plate structure corresponding to the shape of the annular gas ring. In addition, a cleaning liquid injection tube 122 through which a predetermined cleaning liquid 126 is injected is disposed in the main body having the circular plate structure, and a cleaning liquid injection hole 124 is formed at an end of the cleaning liquid injection tube 122. Here, as the cleaning liquid, nitrogen and pure water can be supplied as shown in FIGS. 5 and 6, in which case nitrogen serves to accelerate the injection rate of pure water. At this time, the cleaning liquid made of nitrogen and pure water according to the process characteristics is one embodiment presented to explain the cleaning tool 120 according to the present invention, it is a matter of course that the cleaning liquid of various components can be supplied according to the process characteristics .

In addition, the cleaning solution injection hole 124 is disposed so as to face in the horizontal direction to the process gas supply nozzle unit 110 (oxygen supply nozzle (110a), xylene supply nozzle (110b)) provided in the gas ring. Is the key. That is, the gas ring has eight process gas supply nozzle parts 110 each including one oxygen supply nozzle 110a and a pair of xylene supply nozzles 110b. Accordingly, as shown in FIG. 5, eight washing liquid injection pipes 122 are formed radially (a shape extending in all directions from one point in the center) so as to face the process gas supply nozzle part 110. In addition, the cleaning liquid injection holes 124 for spraying the cleaning liquid through the cleaning liquid injection pipe 122 are also implemented to be arranged in a total of eight.

As such, the reason why the same number of cleaning liquid injection holes 124 as the process gas supply nozzle unit 110 is disposed at a position facing the process gas supply nozzle unit 110 in the horizontal direction is the process gas supply nozzle unit. This is to enable a 1: 1 cleaning process for (110). In fact, when performing a 1: 1 cleaning process with the cleaning liquid sprayed through the cleaning liquid injection hole 124 with respect to the process gas supply nozzle unit 110, the process gas supply nozzle 110a of the process gas supply nozzle unit 110 , 110b) and the inside of the coupling holes 114 and 118 on which the process gas supply nozzles 110a and 110b are mounted are cleaned more cleanly.

In this way, the cleaning tool 120 according to the present invention is characterized in that to form the cleaning liquid injection hole 124 equal to the number of process gas supply nozzle unit 110 provided in the gas ring 108. However, the position and number of the cleaning liquid injection pipe 122 and the cleaning liquid injection hole 124 is sufficiently variable, depending on the position and the number of the process gas supply nozzle unit 110 provided in the gas ring 108. It can be modified. For example, when the width of the cleaning liquid injection hole 124 is made wide, the number of the cleaning liquid injection tube 122 and the cleaning liquid injection hole 124 may be reduced. Alternatively, instead of forming a plurality of cleaning liquid spray holes having a predetermined size in the cleaning tool having an annular structure, a gap in which the cleaning liquid may be sprayed in all directions may be formed on the side of the cleaning tool without separately embedding the cleaning liquid spray pipe.

In the present invention, after the CVD process using the plasma is completed, the cleaning tool 120 is disposed in the process chamber 10 to clean the gas ring 108. 9 illustrates a state in which the cleaning tool 120 is applied to the gas ring 108.

Referring to FIG. 9, after the plasma CVD process using oxygen and xylene as the plasma source is completed, the cleaning tool 120 is introduced into the process chamber. In this case, the cleaning tool 120 has the position of the process gas supply nozzle unit 110 provided in the gas ring 108 and the position of the cleaning liquid injection hole 124 provided in the cleaning tool 120 facing each other on a horizontal line. It is preferable to arrange so that. In order to remove particles adhered to the process gas supply node 110 as much as possible by spraying the cleaning solution to the process gas supply nozzle unit 110 formed in the gas ring 108 as accurately as possible. to be.

As such, the 1: 1 cleaning process by the cleaning liquid injection hole 124 is performed on all eight process gas supply nozzle parts 110 provided in the gas ring 108. As a result, the oxygen supply nozzles 110a and the xylene supply nozzles 110b of the process gas supply nozzle unit 110, the oxygen supply nozzles coupling hole 114 and the xylene supply nozzles coupling hole 118, The cleaning effect is improved to minimize the generation of particles such as polymer. In addition, by effectively performing the cleaning process for the process gas supply nozzle unit 110 provided in the gas ring 108 to minimize polymer generation, it is possible to solve the problem of particle down and wafer contamination due to particle down. . In addition, by removing the polymer of the process gas supply nozzle unit 108 more clearly, the process gas supply amount for plasma formation can be made uniform, and the step coverage of the CVD film can be improved. In addition, since the process gas supply nozzle portion can be cleaned without removing the process gas supply nozzle from the gas ring as in the related art, the overall cleaning time for the gas ring can be shortened, and the wear loss can be prevented, thereby reducing the process loss time and reducing the production cost You can do it.

As described above, in the present invention, in cleaning the gas ring of the plasma deposition equipment for forming the material film on the wafer, a plurality of process gas supply nozzles provided in the gas ring are respectively sprayed in a horizontal direction. Apply a cleaning tool with holes formed. Therefore, the cleaning liquid is injected through the cleaning liquid injection hole to perform a 1: 1 cleaning process on the process gas supply nozzle of the gas ring, whereby the process gas supply nozzle and the process gas supply nozzle of the process gas supply nozzle are mounted. By cleaning the inside of the coupling hole more cleanly, it is possible to minimize particle down problems and wafer loss due to particle down.

In addition, as the cleanliness of the process gas supply portion provided in the gas ring is increased, the gas supply amount becomes uniform, thereby improving the step coverage of the material film deposited by the plasma reaction.

In addition, by performing the cleaning process for the gas ring while the cleaning tool is introduced into the process chamber without separating the process gas supply nozzle portion from the gas ring as in the related art, the cleaning time for the gas ring is shortened to reduce the overall process loss. Time can be reduced, and production costs can also be reduced by preventing wear of the gas ring and process gas supply nozzles.

Claims (16)

In a semiconductor device manufacturing facility for depositing a material film on a wafer: A process chamber defining a processing space in an enclosed atmosphere; An upper electrode formed in an upper region of the process chamber and to which high frequency power is applied for plasma formation; A lower electrode formed in a lower region of the process chamber and to which a high frequency power corresponding to the upper electrode is applied; A gas ring including a process gas supply nozzle unit for supplying a process gas to a space between the upper electrode and the lower electrode; And After the plasma process is completed, the cleaning tool is injected into the process chamber to clean the gas ring, and includes a cleaning tool part in which a cleaning liquid spray hole is formed to face the process gas supply nozzle part provided in the gas ring in a horizontal direction. Semiconductor device manufacturing equipment, characterized in that. The semiconductor device manufacturing apparatus according to claim 1, wherein the cleaning liquid injection holes are formed in the same number as the process gas supply nozzles provided in the gas ring. 3. The semiconductor device manufacturing equipment according to claim 2, wherein the cleaning tool portion is provided with the same number of cleaning liquid ejection tubes as the cleaning liquid ejection holes. 4. The semiconductor device manufacturing equipment according to claim 3, wherein the cleaning liquid injection pipe is formed radially. The semiconductor of claim 1, wherein the process gas supply nozzle unit is provided with a process gas supply nozzle for supplying a process gas for plasma formation into a process chamber, and a coupling hole in which the process gas supply nozzle is mounted. Device manufacturing equipment. The semiconductor device manufacturing facility of claim 1, wherein the process gases supplied into the process chamber to form the plasma are O ₂ and SiH ₄ . The semiconductor device manufacturing apparatus according to claim 1, wherein the cleaning liquid sprayed through the cleaning tool is pure water and nitrogen. 7. The semiconductor device manufacturing facility according to claim 6, wherein the pure water and nitrogen are injected and injected simultaneously. In a semiconductor device manufacturing facility for depositing a material film on a wafer: A process chamber defining a processing space in an enclosed atmosphere; An upper electrode formed in an upper region of the process chamber and to which high frequency power is applied for plasma formation; A lower electrode formed in a lower region of the process chamber and to which a high frequency power corresponding to the upper electrode is applied; A gas ring including a process gas supply nozzle unit for supplying a process gas to a space between the upper electrode and the lower electrode; And After the plasma process is completed, the cleaning tool is injected into the process chamber to clean the gas ring, the cleaning tool portion is formed with a cleaning liquid injection hole for spraying the cleaning liquid to the process gas supply nozzle portion provided in the gas ring Semiconductor device manufacturing equipment, characterized in that. 10. The semiconductor device manufacturing apparatus according to claim 9, wherein the cleaning liquid injection holes are formed in the same number as the process gas supply nozzles provided in the gas ring. 11. The semiconductor device manufacturing equipment according to claim 10, wherein the cleaning tool portion is provided with the same number of cleaning liquid ejection tubes as the cleaning liquid ejection holes. 12. The semiconductor device manufacturing equipment according to claim 11, wherein the cleaning liquid injection pipe is formed radially. 10. The semiconductor device as claimed in claim 9, wherein the process gas supply nozzle unit has a process gas supply nozzle for supplying a process gas for plasma formation into the process chamber, and a coupling hole to which the process gas supply nozzle is mounted. Device manufacturing equipment. 10. The apparatus of claim 9, wherein the process gases supplied into the process chamber for plasma formation are O ₂ and SiH ₄ . The semiconductor device manufacturing apparatus according to claim 9, wherein the cleaning liquid sprayed through the cleaning tool is pure water and nitrogen. The semiconductor device manufacturing facility according to claim 15, wherein the pure water and nitrogen are injected and injected simultaneously.

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