KR20070022764A - Sputtering target, optical information recording medium and method for producing same - Google Patents

Sputtering target, optical information recording medium and method for producing same Download PDF

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KR20070022764A
KR20070022764A KR1020067026730A KR20067026730A KR20070022764A KR 20070022764 A KR20070022764 A KR 20070022764A KR 1020067026730 A KR1020067026730 A KR 1020067026730A KR 20067026730 A KR20067026730 A KR 20067026730A KR 20070022764 A KR20070022764 A KR 20070022764A
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optical information
recording medium
information recording
sputtering target
sio
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KR100826454B1 (en
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히데오 다카미
마사타카 야하기
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닛코킨조쿠 가부시키가이샤
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/258Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
    • G11B7/259Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266Sputtering or spin-coating layers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/213SiO2
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3217Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint

Abstract

Y2O3, Al2O3 및 SiO2를 주성분으로 하는 재료로 이루어지는 것을 특징으로 하는 스퍼터링 타겟트 및 이 스퍼터링 타겟트를 사용하여 적어도 박막으로서 광 정보기록매체의 구조의 일부를 형성하고, 또한 기록 층 또는 반사 층과 인접하여 배치되어 있는 것을 특징으로 하는 광 정보기록매체 및 그 제조방법. 막의 비 정질 성이 안정하며, 기록 층과의 밀착성, 기계특성이 우수하며, 또한 투과율이 높고, 비유화물 계로 구성하는 것에 의해 인접하는 반사 층, 기록 층의 열화가 생기기 어려운 광 정보기록매체용 박막(특히 보호막으로서 사용) 및 그 제조방법과 이들에 적용할 수 있는 스퍼터링 타겟트에 관한 것이며, 이것에 의해 광 정보기록매체의 특성의 향상 및 생산성을 대폭 개선하는 것을 목적으로 한다.A sputtering target, comprising a material mainly composed of Y 2 O 3 , Al 2 O 3, and SiO 2 , and forming part of the structure of the optical information recording medium as at least a thin film by using the sputtering target; An optical information recording medium and a method of manufacturing the same, wherein the optical information recording medium is disposed adjacent to the recording layer or the reflective layer. A thin film for an optical information recording medium having stable film amorphousness, good adhesion to a recording layer, excellent mechanical properties, high transmittance, and a non-emulsification system, which are less likely to cause deterioration of adjacent reflective layers and recording layers. (Particularly used as a protective film), and a method of manufacturing the same and a sputtering target applicable to them, which aims to greatly improve the characteristics and productivity of the optical information recording medium.

광 정보개록매체, 스퍼터링 타겟트Optical information green medium, sputtering target

Description

스퍼터링 타겟트와 광 정보기록매체 및 그 제조방법{SPUTTERING TARGET, OPTICAL INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING SAME}Sputtering target, optical information recording medium and manufacturing method thereof {SPUTTERING TARGET, OPTICAL INFORMATION RECORDING MEDIUM AND METHOD FOR PRODUCING SAME}

본 발명은 스퍼터 막의 비 정질 성(非晶質性)이 안정되고, 기록 층과의 밀착성, 기계특성이 우수하며, 투과율이 높고, 또한, 비유화물 계(系)로 구성되어 있기 때문에 인접하는 반사 층, 기록 층의 열화(劣化)가 생기기 어려운 광 정보기록매체용 박막(특히 보호막으로서 사용) 및 그 제조방법과 이들에 적용할 수 있는 스퍼터링 타겟트에 관한 것이다.In the present invention, the amorphous property of the sputter film is stabilized, the adhesion with the recording layer is excellent, the mechanical properties are excellent, the transmittance is high, and it is composed of a non-emulsion system so that the adjacent reflection A thin film for an optical information recording medium (especially used as a protective film), a method of manufacturing the same, and a sputtering target applicable to these layers and recording layers, which are unlikely to deteriorate.

종래, 주로 상(相)변화형의 광 정보기록매체의 보호층에 일반적으로 사용되는 ZnS-SiO2는 광학특성, 열특성, 기록 층과의 밀착성 등에 있어서, 우수한 특성을 가지며, 넓게 사용되고 있다.Conventionally, ZnS-SiO 2, which is generally used for the protective layer of the phase change type optical information recording medium, has excellent characteristics in optical properties, thermal properties, adhesion to the recording layer, and is widely used.

그러나, 요즘 블루 레이(Blue-Ray)로 대표되는 다시 쓰기(rewritable:改書)형 DVD는, 더욱이 다시 쓰기 회수의 증가, 대용량화, 고속기록화가 요구되어 지고 있다.However, the rewritable DVDs represented by Blu-Ray are required to increase the number of times of writing again, to increase the capacity, and to record at high speed.

광 정보기록매체의 다시 쓰기 회수 등이 열화 하는 원인의 하나로서, 보호층 ZnS-SiO2에 끼워져 있는 것처럼 배치된 기록층 재(材)에로, ZnS-SiO2로부터의 유황 성분의 확산을 들 수 있다.One of the causes of the deterioration of the number of times of rewriting of the optical information recording medium, etc., is the diffusion of sulfur components from ZnS-SiO 2 to the recording layer material disposed as if sandwiched in the protective layer ZnS-SiO 2 . have.

또한 대용량화, 고속기록화를 위해 고(高) 반사율로 고열전도특성을 가지는 순Ag 또는 Ag합금이 반사 층 재(材)로 사용되어 지게 되었지만, 이와 같은 반사 층도 보호층 재인 ZnS-SiO2와 접하게 배치되어 있다.In addition, pure Ag or Ag alloys having high heat conductivity and high thermal conductivity for high capacity and high-speed recording have been used as reflective layer materials, but such reflective layers also come into contact with the protective layer material ZnS-SiO 2. It is arranged.

따라서 이 경우도 동일하게 ZnS-SiO2로부터의 유황성분의 확산에 의해 순Ag 또는 Ag합금 반사층 재도 부식 열화하여, 광 정보기록매체의 반사율 등의 특성 열화를 야기 시키는 원인으로 되고 있다.Therefore, in this case as well, the diffusion of sulfur components from ZnS-SiO 2 also causes corrosion of the pure Ag or Ag alloy reflective layer to deteriorate corrosion, causing deterioration of characteristics such as reflectance of the optical information recording medium.

이들 유황성분의 확산방지 대책으로서 반사 층과 보호층, 기록 층과 보호층의 사이에 질화물(窒化物)이나 탄화물(炭化物)을 주성분으로 한 중간층을 마련한 구성으로 하는 것도 행하여지고 있다. 그러나 이것은 적층 수의 증가로 되어, 처리율 저하, 생산비가 증가한다고 하는 문제가 발생하고 있다.As a countermeasure against the diffusion of these sulfur components, an intermediate layer mainly composed of nitride or carbide is provided between the reflective layer and the protective layer, and the recording layer and the protective layer. However, this leads to an increase in the number of stacked layers, resulting in problems such as a decrease in throughput and an increase in production cost.

상기와 같은 문제를 해결하기 위하여, 보호층 재에 황화물을 포함하지 않는 산화물만의 재료로 바꾸어, ZnS-SiO2와 동등 이상의 광학특성, 비정질 안전성을 가지는 재료 계(系)를 찾아내는 것이 급선무가 되어 왔다.In order to solve the above problems, it is urgent to find a material system having an optical property and amorphous stability equal to or higher than that of ZnS-SiO 2 by switching to a material containing only an oxide containing no sulfide in the protective layer material. come.

이상으로부터 산화물계 보호층 재(材), 투명도전 재 또는 광학 박막이 제안 되어지고 있다(특허문헌 1~3 참조).As mentioned above, the oxide type protective layer material, the transparent conductive material, or the optical thin film are proposed (refer patent documents 1-3).

그러나, 특허문헌 1~3은 광학특성 및 비 정질 성이 떨어지는 영역을 포함하는 문제가 있다.However, Patent Documents 1 to 3 have a problem of including a region having poor optical characteristics and amorphousness.

특허문헌 1: 일본 특개평 01-317167호 공보Patent Document 1: Japanese Patent Application Laid-Open No. 01-317167

특허문헌 2: 일본 특개 2000-90745호 공보Patent Document 2: Japanese Patent Application Laid-Open No. 2000-90745

특허문헌 3: 일본 특개 2003-166052호 공보Patent Document 3: Japanese Patent Application Laid-Open No. 2003-166052

(발명의 개시)(Initiation of invention)

본 발명은 막의 비 정질 성이 안정하며, 기록 층과의 밀착성, 기계특성이 우수하며, 또한 투과율이 높고, 비유화물 계로 구성하는 것에 의해 인접하는 반사 층, 기록 층의 열화가 생기기 어려운 광 정보기록매체용 박막(특히 보호막으로서 사용) 및 그 제조방법과 이들에 적용할 수 있는 스퍼터링 타겟트에 관한 것이며, 이것에 의해 반복 다시 쓰기 특성 등의 광 정보기록매체의 특성의 향상을 대폭 개선하는 것을 목적으로 한다.The optical information recording of the present invention has stable film amorphousness, good adhesion to a recording layer, excellent mechanical properties, high transmittance, and a non-emulsification system, and therefore, optical information recording is unlikely to cause deterioration of adjacent reflective layers and recording layers. The present invention relates to a medium thin film (particularly used as a protective film), to a method of manufacturing the same, and to a sputtering target applicable to the same, thereby greatly improving the characteristics of an optical information recording medium such as repeat rewriting characteristics. It is done.

상기의 과제를 해결하기 위하여 본 발명자들은 예의(銳意)연구를 행한 결과, 종래의 보호층 재 ZnS-SiO2를 하기(下記)에 제시하는 유화물을 포함하지 않는 산화물만의 재료로 바꾸어, 즉, ZnS-SiO2와 동등의 광학특성 및 비정질 안정성을 확보하고, 반복 다시 쓰기 광 정보기록매체의 특성개선이 가능하다는 것을 알아내었다.In order to solve the above problems, the present inventors conducted a intensive study and, as a result, replace the conventional protective layer material ZnS-SiO 2 with a material containing only an oxide which does not contain an emulsion, that is, It was found that the optical properties and amorphous stability equivalent to those of ZnS-SiO 2 can be ensured and the characteristics of the rewritable optical information recording medium can be improved.

본 발명은 이 알아낸 것을 기초로 하여,The present invention is based on this finding,

1) Y2O3, Al2O3 및 SiO2로 이루어진 것을 특징으로 하는 스퍼터링 타겟트.1) A sputtering target, comprising Y 2 O 3 , Al 2 O 3, and SiO 2 .

2) Y2O3: 10-60mol%, Al2O3: 10-40mol% 및 SiO2: 30-80mol%로 이루어진 것을 특징으로 하는 스퍼터링 타겟트.2) Sputtering target, characterized in that consisting of Y 2 O 3 : 10-60 mol%, Al 2 O 3 : 10-40 mol% and SiO 2 : 30-80 mol%.

3)상대밀도가 95%이상인 것을 특징으로 하는 상기 1 또는 2에 기재된 스퍼터링 타겟트.3) The sputtering target according to 1 or 2 above, wherein the relative density is 95% or more.

를 제공한다. 또한 본 발명은To provide. In addition, the present invention

4) 상기 1 내지 3의 어느 하나에 기재된 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체 구조의 일부를 형성하는 것을 특징으로 하는 광 정보기록매체 및 그 제조방법.4) An optical information recording medium and a method of manufacturing the same, characterized in that a part of the optical information recording medium structure is formed at least as a thin film using the sputtering target according to any one of 1 to 3.

5) 상기 1 내지 3의 어느 하나에 기재된 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체의 구조의 일부를 형성하고, 또한 기록 층 또는 반사 층과 인접하여 배치되어 있는 것을 특징으로 하는 광 정보기록매체 및 그 제조방법.5) The sputtering target according to any one of the above 1 to 3, which forms at least part of the structure of the optical information recording medium as a thin film, and is arranged adjacent to the recording layer or the reflective layer. Information recording medium and manufacturing method thereof.

을 제공한다.To provide.

(발명의 실시형태)Embodiment of the Invention

본 발명의 스퍼터링 타겟트는 Y2O3, Al2O3, SiO2를 주성분으로 하는 재료로 이루어진다. 유리형성 산화물인 SiO2는 비정질을 안정화시킨다. 이 효과를 얻기 위해서는 SiO2가 30mol% 이상인 것이 바람직하다. 그러나 SiO2가 80mol%를 초과하면, 광학특성(굴절률)이 나쁘게 되기 때문에, 양호한 특성을 얻기 위해서는 상한을 80mol%로 하는 것이 바람직하다.The sputtering target of the present invention is made teuneun the Y 2 O 3, Al 2 O 3, SiO 2 as a material containing as a main component. SiO 2 , a glass forming oxide, stabilizes the amorphous material. In order to obtain this effect, preferably at least the SiO 2 30mol%. However, when SiO 2 is more than 80mol%, because of the optical properties (refractive index) it is to be bad, it is preferable that the upper limit is set to 80mol% in order to obtain good properties.

Al2O3의 첨가는 소결온도를 저하 시키는 효과를 가진다. 소결온도를 낮추는 것에 의해, 밀도를 높일 수 있으며, 안정한 제조가 가능하다. 그 효과를 달성하기 위해 Al2O3은 10mol% 이상으로 하는 것이 바람직하다. 그러나 다량의 첨가는 비정질성을 나쁘게 하고, 열전도율이 매우 커져 버리기 때문에, Al2O3을 40mol% 이하로 하는 것이 바람직하다. 잔부는 Y2O3이며, 즉 Y2O3를 10-60mol%로 한다.The addition of Al 2 O 3 has the effect of lowering the sintering temperature. By lowering the sintering temperature, the density can be increased and stable production is possible. In order to achieve the effect, Al 2 O 3 is preferably at least 10 mol%. However, large amount of addition is due to the discarding bad amorphous, and the thermal conductivity is very large, it is preferable that the Al 2 O 3 less than 40mol%. The cup portion Y 2 O 3, that is, the Y 2 O 3 with 10-60mol%.

이것에 의해 스퍼터링 타겟트의 상대밀도를 95% 이상으로 하는 것이 가능하게 되고, 안정한 고밀도의 스퍼터링 타겟트를 제조할 수 있다.As a result, the relative density of the sputtering target can be made 95% or more, and a stable high density sputtering target can be manufactured.

또한, 본 발명은 상기의 스퍼터링 타겟트를 사용하여 적어도 박막으로서 광 정보기록매체 구조의 일부를 형성하는 것이 가능하다. 또한 본 발명의 스퍼터링 타겟트를 사용하여 적어도 박막으로서 광 정보기록매체의 구조의 일부를 형성하고, 또한 기록 층 또는 반사 층과 인접하여 배치되어 있는 광 정보기록매체 및 그 제조방법을 얻는 것이 가능하다.In addition, the present invention makes it possible to form part of the optical information recording medium structure at least as a thin film by using the sputtering target described above. It is also possible to obtain an optical information recording medium and a method for manufacturing the optical information recording medium which are formed at least as part of the structure of the optical information recording medium as at least a thin film using the sputtering target of the present invention and are arranged adjacent to the recording layer or the reflective layer. .

이 재료는 광학특성 및 막의 비 정질 성이 안정하고 있으며, 상변화형 광 기록매체의 보호층 재(材)에 적합하다. 성막에는 고주파 스퍼터링을 사용한다.This material is stable in optical properties and film amorphousness, and is suitable for the protective layer material of a phase change type optical recording medium. High frequency sputtering is used for film formation.

본 재료는 상기와 같이 비 정질 성이 안정하고, 투과율을 향상시키는 것이 가능하기 때문에, 다시 쓰기 속도가 빠른 상변화 기록매체나 청색 레이저의 상변화 기록매체용 보호층 재에 적합하다.This material is suitable for a phase change recording medium having a high rewriting speed or a protective layer material for a phase change recording medium of a blue laser, because the amorphous property is stable and transmittance can be improved as described above.

또한 본 발명의 스퍼터링 타겟트는 상대밀도를 95% 이상으로 하는 것이 가능하다. 밀도의 향상은 스퍼터 막의 균일성을 높이고, 또한 스퍼터링 시의 파티클의 발생을 억제할 수 있는 효과를 가진다.Moreover, the sputtering target of this invention can make relative density into 95% or more. The improvement of the density has the effect of increasing the uniformity of the sputter film and suppressing the generation of particles during sputtering.

상기에서 말한 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체 구조의 일부를 형성하는 광 정보기록매체를 제공하는 것이 가능하다.It is possible to provide an optical information recording medium which forms part of the optical information recording medium structure at least as a thin film by using the above-mentioned sputtering target.

또한, 상기 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체의 구조의 일부를 형성하는 것과 함께, 기록 층 또는 반사 층과 인접하여 배치되어 있는 광 정보기록매체를 제작하는 것이 가능하다.It is also possible to form an optical information recording medium which is arranged adjacent to the recording layer or the reflective layer while forming part of the structure of the optical information recording medium at least as a thin film by using the sputtering target.

본 발명의 스퍼터링 타겟트를 사용하여 형성된 박막은 광 정보기록매체의 구조의 일부를 형성하고, 기록 층 또는 반사 층과 인접하여 배치되지만, 상기와 같이 ZnS를 사용하고 있지 않기 때문에, S에 의한 오염이 없고, 보호층에 끼워지게 배치된 기록 층 재로의 유황성분의 확산이 없어지고, 이것에 의한 기록 층의 열화가 없어진다는 현저한 효과가 있다.The thin film formed using the sputtering target of the present invention forms part of the structure of the optical information recording medium and is disposed adjacent to the recording layer or the reflective layer, but is not contaminated by S because ZnS is not used as described above. There is a remarkable effect that there is no diffusion of the sulfur component into the recording layer material sandwiched in the protective layer, and the deterioration of the recording layer is thereby eliminated.

또한 대용량화, 고속기록화를 위해 고 반사율로, 고 열전도 특성을 가지는 순Ag 또는 Ag합금이 반사 층 재로 사용되게 되었지만, 이 인접하는 반사 층으로의 유황성분의 확산도 없어지고, 동일하게 반사 층 재가 부식 열화하여 광 정보기록매체의 반사율 등의 특성 열화를 일으키는 원인이 전부 없어진다고 하는 우수한 효과를 가진다.In addition, pure Ag or Ag alloys with high reflectivity and high thermal conductivity for high capacity and high-speed recording are used as reflective layer materials, but the diffusion of sulfur components into the adjacent reflective layers is also eliminated, and the reflective layer materials are corroded in the same manner. Deterioration has an excellent effect that all causes of deterioration of characteristics such as reflectance of the optical information recording medium are eliminated.

본 발명의 스퍼터링 타겟트는 평균입경이 5㎛이하인 각 구성원소의 산화물 분말을 상압(常壓)소결 또는 고온가압(高溫加壓) 소결하는 것에 의하여 제조할 수 있다. 이것에 의해 상대밀도가 95%이상을 가지는 스퍼터링 타겟트를 얻을 수 있다. 이 경우 소결 전에 산화 이트륨을 주성분으로 한 산화물 분말을 1000~1400℃에서 가소하는 것이 바람직하다. 이 가소 후, 3㎛이하로 분쇄하여 소결용의 원료로 한다.The sputtering target of this invention can be manufactured by atmospheric pressure sintering or high temperature pressurization of the oxide powder of each element whose average particle diameter is 5 micrometers or less. As a result, a sputtering target having a relative density of 95% or more can be obtained. In this case, before sintering, it is preferable to calcinate the oxide powder containing yttrium oxide as a main component at 1000-1400 degreeC. After this calcination, the powder is ground to 3 µm or less to obtain a raw material for sintering.

본 발명에 있어서 특히 Al2O3를 첨가하는 것에 큰 특징을 가지고 있다. 상술한 바와 같이, Al2O3을 첨가하는 것에 의해 소결온도를 저하 시키는 것이 가능하다는 우수한 효과를 가진다.In the present invention has a great feature that in particular the addition of Al 2 O 3. As described above, we have an excellent effect that it is possible to lower the sintering temperature by the addition of Al 2 O 3.

Y2O3-SiO2의 2 성분계(成分系)에서는 광학특성 및 비 정질 성 등은 양호하지만, 경우에 따라서는 1700℃이상의 고온으로 높이지 않으면, 밀도를 충분히 올릴 수 없고, 안정한 제조가 어렵다는 문제가 있었다. 본 발명에서는 소결온도를 1600℃ 이하로 낮추는 것이 가능하고, 고밀도이며 또한 광학특성 및 비 정질 성 등을 만족하는 것이 가능하다는 현저한 효과를 얻었다.In the two-component system of Y 2 O 3 -SiO 2 , optical properties and amorphous properties are good, but in some cases, if the temperature is not increased to a high temperature of 1700 ° C. or higher, the density cannot be sufficiently increased and stable production is difficult. There was a problem. In the present invention, a remarkable effect is obtained that the sintering temperature can be lowered to 1600 ° C. or lower, and high density and optical properties and amorphous properties can be satisfied.

또한 본 발명의 스퍼터링 타겟트를 사용하는 것에 의해 생산성이 향상하고, 품질이 우수한 재료를 얻는 것이 가능하며, 광 디스크 보호막을 갖는 광 기록매체를 저비용으로 안정하게 제조할 수 있다는 현저한 효과가 있다.In addition, by using the sputtering target of the present invention, it is possible to obtain a material with improved productivity and excellent quality, and there is a remarkable effect that an optical recording medium having an optical disk protective film can be manufactured stably at low cost.

본 발명의 스퍼터링 타겟트의 밀도향상은 공공(空孔)을 감소시켜 결정 입을 미세화하고, 타겟트의 스퍼터 면을 균일하면서 평활하게 하는 것이 가능하기 때문에, 스퍼터링 시의 파티클이나 노즐을 저감시키고, 또한 타겟트 라이프도 길게 하는 것이 가능하다는 현저한 효과를 가지며, 품질의 격차가 적어 생산성을 향상시킬 수 있다. Since the density improvement of the sputtering target of this invention can reduce an empty space and refine | miniaturize a crystal grain, and can make the sputter surface of a target uniform and smooth, the particle | grains and nozzle at the time of sputtering are reduced, and also It has a remarkable effect that the target life can also be lengthened, and the productivity can be improved due to a small quality gap.

이하 실시 예 및 비교 예에 기초하여 설명한다. 단 본 실시 예는 어디까지나 일 예이며, 이 예에 의해 어떠한 제한이 되는 것은 아니다. 즉, 본 발명은 특허청 구범위에 의해서만 제한되는 것이며, 본 발명에 포함되는 실시 예 이외의 각종 변형을 포함하는 것이다.It demonstrates based on an Example and a comparative example below. However, this embodiment is only an example to the last, and it does not restrict | limit any by this example. That is, the present invention is limited only by the claims, and includes various modifications other than the embodiments included in the present invention.

(( 실시예1Example 1 -4)-4)

4N상당에서 5㎛이하의 SiO2 분말, Y2O3 분말 및 Al2O3 분말을 준비하고, 표 1에 나타내는 조성이 되도록 조합하여, 습식혼합(濕式混合)하고 건조 후, 1100℃에서 가소하였다. 다시 이 가소 분말을 평균 입경 1㎛ 정도까지 습식미분쇄(濕式黴粉碎)한 후, 바인더를 첨가하여 스프레이 드라이어로 조립(造粒)하였다. 이 조립 분말을 냉간에서 가압성형하고, 산소분위기(flow) 중, 1200~1600℃에서 상압 소결하고, 이 소결 재(材)를 기계가공으로 타겟트 형상으로 마무리하였다.SiO 2 powder, Y 2 O 3 powder and Al 2 O 3 powder of 5 µm or less in 4N equivalent were prepared, combined so as to have the composition shown in Table 1, wet-mixed and dried, and then dried at 1100 ° C. Plasticized. The calcined powder was further wetly pulverized to an average particle diameter of about 1 µm, and then a binder was added to granulate with a spray dryer. This granulated powder was press-molded by cold, and it sintered by atmospheric pressure at 1200-1600 degreeC in an oxygen atmosphere flow, and this sintered material was finished to the target shape by machining.

실시 예1-4의 소결온도는 각각 1400℃, 1550℃, 1250℃, 1400℃로 하였다. 단, 소결온도는 상기의 범위에 있다면, 거의 동등하게 소결하는 것이 가능하였다.The sintering temperature of Example 1-4 was set to 1400 degreeC, 1550 degreeC, 1250 degreeC, and 1400 degreeC, respectively. However, if the sintering temperature was in the above range, it was possible to sinter almost equally.

Figure 112006093939058-PCT00001
Figure 112006093939058-PCT00001

상기의 마무리가공 한 6inchφ 사이즈의 타겟트를 사용하여, 스퍼터링을 행하였다. 스퍼터 조건은 RF스퍼터, 스퍼터 파워 1000W, Ar가스압 0.5Pa로 하여, 목표 막 두께 1500Å에서 성막 하였다.Sputtering was performed using the above-mentioned 6 inch diameter size target. Sputter | spatter conditions were formed into a RF sputter | spatter, 1000 W of sputter | spatter powers, and 0.5 Pa of Ar gas pressure, and formed into a film at the target film thickness of 1500 kPa.

성막 샘플의 투과율(파장405nm)%, 굴절률(파장405nm), 비정질성(성막 샘플의 아니링 처리(600℃×30min, Ar분위기)을 실시하였다. XRD(Cu-Kα,40kV, 30mA)에 의한 측정에 있어서 2θ=20-60℃의 범위의 미 성막(未成膜) 유리기판에 대한 최대 피크 강도로 나타내었다.)의 측정한 결과 등을 정리하여 표1에 나타낸다.Transmittance (wavelength 405 nm)%, refractive index (wavelength 405 nm) of the film formation sample, and amorphous (annealing treatment (600 ° C. × 30 min, Ar atmosphere) of the film formation sample) were performed. XRD (Cu-Kα, 40 kV, 30 mA) was performed. In the measurement, the results of the measurement of the maximum peak intensity for a non-film glass substrate in the range of 2θ = 20-60 ° C.

이상의 결과 실시 예 1-4의 스퍼터링 타겟트는 상대밀도는 95 이상에 달하며, 안정한 RF 스퍼터가 되었다.As a result, the sputtering target of Example 1-4 reached 95 or more, and became a stable RF sputter.

스퍼터 막의 투과율은 95~96%(405nm)에 달하고, 굴절률은 1.7~1.9이며, 또한 특정의 결정 피크는 보이지 않고, 안정된 비 정질성(1.0~1.5)을 가지고 있다.The sputter film has a transmittance of 95 to 96% (405 nm), a refractive index of 1.7 to 1.9, and no specific crystal peak is seen, and it has stable amorphousness (1.0 to 1.5).

또한 본 실시 예의 타겟트는 ZnS를 사용하고 있지 않기 때문에, 유황의 확산·오염에 의한 광 정보기록매체의 특성 열화는 생기지 않는다. 또한, 후술하는 비교 예와 비교하여, 성막 샘플의 투과율, 굴절률, 비 정질의 안정성이 어느 것이라도 양호한 값을 나타내었다.In addition, since the target of this embodiment does not use ZnS, there is no deterioration of the characteristics of the optical information recording medium due to diffusion and contamination of sulfur. Moreover, compared with the comparative example mentioned later, all of the transmittance | permeability, refractive index, and amorphous stability of the film-forming sample showed the favorable value.

(비교 예1-4)(Comparative Example 1-4)

표 1에 나타낸 바와 같이 본원발명의 조건과는 상이한 원료분말의 성분 및 조성비의 재료, 특히 비교 예4에 있어서는 ZnS 원료분말을 준비하고, 소결온도 조건을 1500~1800℃로 하고, 기타는 실시 예와 동일한 조건으로 타겟트를 제작하고, 다음으로 이 타겟트를 사용하여 스퍼터 막을 형성하였다. 비교 예1-4의 소결온도는 각각 1650℃, 1550℃, 1750℃, 1000℃(핫 프레스에 의한다)로 하였다.As shown in Table 1, a ZnS raw material powder was prepared in a material of a raw material powder and a composition ratio different from the conditions of the present invention, in particular, Comparative Example 4, and the sintering temperature conditions were set at 1500 to 1800 ° C. A target was produced under the same conditions as, and then a sputtered film was formed using this target. The sintering temperature of the comparative example 1-4 was 1650 degreeC, 1550 degreeC, 1750 degreeC, and 1000 degreeC (by hot press), respectively.

이 결과를 동일하게 표 1에 나타낸다.This result is shown in Table 1 similarly.

본 발명의 조성비로부터 일탈하는 비교 예의 성분·조성, 예를 들면 비교 예1에 대하여는 Al2O3가 60mol%로 너무 많아 비 정질 성이 나쁜 결과가 되었다.In the component and composition of the comparative example deviating from the composition ratio of the present invention, for example, Comparative Example 1, too much Al 2 O 3 was 60 mol%, resulting in poor amorphousness.

비교 예2는 Y2O3와 Al2O3가 적고, 한편으로는 SiO2가 많기 때문에 균형이 맞지 않고, 굴절률이 기준보다 저하하였다.In Comparative Example 2, since Y 2 O 3 and Al 2 O 3 were few and, on the other hand, SiO 2 was large, the balance was not balanced, and the refractive index was lower than the reference.

비교 예3은 Y2O3가 매우 많은 한편 SiO2가 적기 때문에 균형이 맞지 않고, 밀도가 충분히 올라가지 않아 스퍼터 특성이 떨어진다는 결과가 되었다.In Comparative Example 3, since Y 2 O 3 was very large and SiO 2 was small, the balance was not balanced and the density did not sufficiently increase, resulting in poor sputtering characteristics.

비교 예4는 굴절률이 높고, 밀도도 높으나, ZnS가 많이 함유되어 있고, 유황에 의한 오염의 위험이 있는 재료이었다. 또한 투과율도 나빴다.Comparative Example 4 was a material having a high refractive index and a high density, but containing a large amount of ZnS and having a risk of contamination by sulfur. Moreover, the transmittance | permeability was also bad.

본 발명의 스퍼터링 타겟트를 사용하여 형성된 박막은 광 정보기록매체의 구조의 일부를 형성하고, ZnS를 사용하고 있지 않기 때문에, 기록 층 재로의 유황성분의 확산이 없어지고, 이것에 의한 기록 층의 열화가 없어진다는 현저한 효과가 있다. 또한 인접하는 고 반사율로, 고열전도특성을 가지는 순Ag 또는 Ag합금을 반사층으로 사용한 경우에는, 이 반사 층으로의 유황성분의 확산도 없어지고, 반사 층이 부식 열화하여 특성 열화를 일으키는 원인이 전부 없어진다고 하는 우수한 효과를 가진다.Since the thin film formed by using the sputtering target of the present invention forms part of the structure of the optical information recording medium and does not use ZnS, the diffusion of sulfur components into the recording layer material is eliminated, whereby There is a significant effect that the deterioration is eliminated. In addition, when pure Ag or Ag alloys having high thermal conductivity and high thermal conductivity are used as the reflective layer, the diffusion of sulfur components into the reflective layer is also eliminated, and the reflective layer deteriorates corrosion and causes property deterioration. It has an excellent effect of disappearing.

또한 비 정질 성이 안정화되는 것과 함께 타겟트에 도전성이 부여되고, 비교 적 저온에서의 소결이 가능하게 되어 안정한 제조가 가능하게 되었다. 또한 이것에 의해 상대밀도를 95%이상의 고밀도화가 달성되어, 안정된 RF스퍼터 성막이 가능하게 되었다. 그리하여 스퍼터의 제어성(制御性)을 용이하게 하고, 스퍼터링 효율을 향상시키는 것이 가능하다는 현저한 효과가 얻어졌고, 성막에 있어서, 스퍼터 시에 발생하는 파티클(발진:發塵)이나 노즐을 저감시키고, 품질의 격차가 적어 대량 생산성을 향상시키는 것이 가능하여, 광 디스크 보호막을 가지는 광 기록매체를 저비용으로 제조가능하다.In addition to the stabilization of the amorphousness, conductivity was imparted to the target, and sintering at a relatively low temperature was possible, thus enabling stable production. As a result, a high density of 95% or more relative density can be achieved, and stable RF sputter deposition can be achieved. Thus, the remarkable effect of facilitating the controllability of the sputter and improving the sputtering efficiency has been obtained. In film formation, the particles and the nozzles generated during sputtering are reduced, It is possible to improve the mass productivity because there is little difference in quality, so that an optical recording medium having an optical disk protective film can be manufactured at low cost.

Claims (5)

Y2O3, Al2O3 및 SiO2로 이루어지는 것을 특징으로 하는 스퍼터링 타겟트.A sputtering target, comprising Y 2 O 3 , Al 2 O 3, and SiO 2 . Y2O3: 10-60mol%, Al2O3: 10-40mol% 및 SiO2: 30-80mol%로 이루어지는 것을 특징으로 하는 스퍼터링 타겟트.A sputtering target comprising Y 2 O 3 : 10-60 mol%, Al 2 O 3 : 10-40 mol% and SiO 2 : 30-80 mol%. 제1항 또는 제2항에 있어서, 상대밀도가 95% 이상인 것을 특징으로 하는 스퍼터링 타겟트.The sputtering target according to claim 1 or 2, wherein the relative density is 95% or more. 제1항 내지 제3항 중 어느 한 항에 기재된 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체 구조의 일부를 형성하는 것을 특징으로 하는 광 정보기록매체 및 그 제조방법.An optical information recording medium and a method of manufacturing the same, wherein the sputtering target according to any one of claims 1 to 3 is used to form part of the optical information recording medium structure at least as a thin film. 제1항 내지 제3항 중 어느 한 항에 기재된 스퍼터링 타겟트를 사용하여, 적어도 박막으로서 광 정보기록매체의 구조의 일부를 형성하며, 또한 기록 층 또는 반사 층과 인접하여 배치되어 있는 것을 특징으로 하는 광 정보기록매체 및 그 제조방법.The sputtering target according to any one of claims 1 to 3, wherein at least a part of the structure of the optical information recording medium is formed as a thin film, and is disposed adjacent to the recording layer or the reflective layer. An optical information recording medium and a manufacturing method thereof.
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