KR20070010422A - Organic light-emitting display device and manufacturing method thereof - Google Patents

Abstract

An organic light-emitting display device and a method for manufacturing the same are provided to offer an inorganic protection film without a separate mask adding process and a photolithography process. In an organic light-emitting display device, a display part(130) has an organic light-emitting device on a substrate. A pad part(150) has at least more than one terminal(170) electrically connected to the display part(130). The terminal(170) of the pad part(150) has a first conduct layer, a second conduct layer which contacts the first conduct layer, and a third conduct layer which contacts the second layer. And, an inorganic protection film is on a side wall of the terminal(170).

Description

Organic light-emitting display device and manufacturing method thereof

1 is a plan view of a conventional organic light emitting display device.

2 is a cross-sectional view taken along line BB ′ of FIG. 1;

3 is a cross-sectional view taken along line AA ′ of FIG. 1;

4 is a plan view of an organic light emitting display device according to an embodiment of the present invention;

5 is a cross-sectional view taken along line CC ′ of FIG. 4;

FIG. 6 is an enlarged view of portion E of FIG. 5;

FIG. 7 is a cross-sectional view taken along line D-D 'of FIG. 4.

<Description of Symbols for Main Parts of Drawings>

110: lower substrate 120: upper substrate

130: image display unit 140, 240: inorganic protective film

150: pad portion 160: insulating layer

170: terminal 180: metal wiring

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to a pad portion and a sealing portion of an organic light emitting display device.

The organic light emitting display device is a flat display device having advantages of small size and light weight, and is widely attracting attention as a next-generation flat panel display device in terms of wide viewing angle, fast response speed, and low driving voltage.

Hereinafter, a conventional organic light emitting display device will be briefly described with reference to the accompanying drawings. 1 is a perspective view illustrating a conventional organic light emitting display device. Accordingly, the organic light emitting display device 1 is a display device in which a light emitting device is formed of an organic semiconductor, and mainly includes an image display unit 13 including a light emitting unit including a plurality of light emitting devices, the image display unit 13, And a pad portion 15 having at least one terminal electrically connected thereto. In this case, the image display unit 13 and the pad unit 15 are usually provided on the first substrate 10, and the first substrate 10 is configured to move the image display unit 13 of the first substrate 10 to outside moisture. And a second substrate 20 for protecting from oxygen. At this time, the coupling of the second substrate 20 to the image display unit 13 is called encapsulation, and a sealing member (not shown) is interposed between the edge of the image display unit 13 and the second substrate 20. Combined.

FIG. 2 is a cross-sectional view taken along line BB ′ of FIG. 1. The figure shows a terminal 17 of a pad portion, whereby the terminal consists of three layers of conductive layers: a first conductive layer 17a, a second conductive layer 17b, and a third conductive layer 17c. In this case, forming the terminal 17 in three layers is to protect the second conductive layer 17b and to make the terminal 17 adhere to the lower insulating layer 16.

However, the terminal formed of the three conductive layers formed as described above has a problem in that the side wall portion is weak so that the second conductive layer is corroded in a subsequent process.

3 is a cross-sectional view taken along line AA ′ of FIG. 1. The drawing shows the metal wiring 18 at the edge of the image display portion 13, whereby the metal wiring 18 is similar to the above-described terminals such that the first conductive layer 18a, the second conductive layer 18b, It consists of three layers of conductive layers of the third conductive layer 18c because the terminal and the metal wiring are formed on the insulating layer 16 in the same process in the manufacture of the image display portion 13.

However, the three-layer metal wiring formed at this time also has a problem in that the sidewall portion is vulnerable to corrode the second conductive layer, and the adhesive strength with the sealing member 19 positioned on the upper portion is weak.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which are provided with a means for protecting a terminal of a pad portion and / or an electrode of an edge of an image display portion.

An organic light emitting diode display according to an exemplary embodiment of the present invention includes an image display unit including an organic light emitting element on a substrate, and a pad unit including at least one terminal electrically connected to the image display unit. And a first conductive layer, a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer, wherein an inorganic protective film is formed on the sidewall of the terminal. do.

In another independent aspect of the present invention, there is provided a manufacturing method of an organic light emitting display device including a pad unit having an image display unit including an organic light emitting element on a substrate and at least one terminal electrically connected to the image display unit. A terminal forming step of forming a terminal in three layers of conductive layers; And an inorganic passivation layer forming step of forming an inorganic passivation layer on the sidewalls of the terminal.

According to another independent claim of the present invention, the first substrate formed with an image display portion including at least one organic light emitting element, a sealing member provided on the edge of the image display portion, and is in contact with the sealing member facing the image display portion An organic light emitting display device including a second substrate, wherein an edge of the image display unit includes a first conductive layer, a second conductive layer in contact with the first conductive layer, and a second conductive layer in contact with the second conductive layer. Metal conductive wires are formed in contact with the sealing member while being formed of three conductive layers, and an inorganic protective film for protecting the metal wires is formed on sidewalls of the metal wires.

According to another independent claim of the present invention, the first substrate formed with an image display portion including at least one organic light emitting element, a sealing member provided on the edge of the image display portion, and is in contact with the sealing member facing the image display portion An organic light emitting display device including a second substrate, comprising: a wiring forming step of forming a metal wiring for applying power or data to a light emitting element in a three-layer conductive layer on an edge of the image display unit; A method of manufacturing an organic light emitting display device, the method including forming an inorganic passivation layer on a sidewall of an organic passivation layer.

According to another independent claim of the present invention, an image display unit including at least one organic light emitting element is formed, the first substrate comprising a pad unit having at least one terminal electrically connected to the image display unit, and the image An organic light emitting display device including a sealing member provided at an edge of a display unit, and a second substrate facing the image display unit while being in contact with the sealing member, wherein the terminals of the pad unit include a first conductive layer and the first conductive layer. A second conductive layer in contact with the conductive layer, and a third conductive layer in contact with the second conductive layer, wherein an inorganic protective film is formed on the sidewall of the terminal, and a first conductive layer is formed at the edge of the image display unit. And a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer and in contact with the sealing member. Is formed in a side wall of the metal wiring is characterized in that the inorganic protection film for protecting the metal wire forming.

According to another independent aspect of the present invention, there is provided an image display unit including at least one organic light emitting element, and includes a first substrate including a pad unit including at least one terminal electrically connected to the image display unit, and an edge of the image display unit. An organic light emitting display device comprising: a sealing member provided at an upper surface of the display panel; and a second substrate facing the image display unit and in contact with the sealing member. A wiring forming step of forming a metal wiring in three layers of conductive layers, and a terminal forming step of forming the terminal in three layers of conductive layers; Forming a first inorganic protective film on a sidewall of the metal wiring; And a second inorganic passivation layer forming step of forming an inorganic passivation layer on the sidewall of the terminal.

Hereinafter, one side of the present invention will be described in detail with reference to the drawings. 4 is a plan view of an organic light emitting diode display for explaining an aspect of the present invention. Accordingly, the organic light emitting diode display 101 includes a lower substrate 110 including an image display unit 130 and a pad unit 150, and an upper substrate 120 encapsulating the image display unit 130.

The image display unit 130 typically includes a plurality of light emitting elements (not shown) and a plurality of metal wires for applying power and data to the light emitting elements in the inside and the edge of the image display unit. In this case, the metal wires are wired in a plurality of rows and columns according to the arrangement of the light emitting devices, and a sealing for sealing between the lower substrate 110 and the upper substrate 120 is formed on the upper portion of the metal wiring at the edge of the image display unit 130. The member 190 is positioned.

To describe the metal wiring of the edge in more detail, reference is made to FIGS. 5 and 6. 5 is a cross-sectional view taken along line CC ′ of FIG. 4, and FIG. 6 is an enlarged view of portion E of FIG. 5. Accordingly, the metal wiring 180 includes the first conductive layer 180a, the second conductive layer 180b, and the third conductive layer 180c, and the inorganic passivation layer 240; 240a is formed on the sidewall of the metal wiring 180. 240b) is formed.

In this case, the first conductive layer 180a is introduced to improve adhesion to the insulating layer 160 and to prevent diffusion of the second conductive layer 180b. For this purpose, Ti or TiN is preferably used as the material. The thickness is preferably 10 kPa to 1000 kPa. This is because the effect is less than 10 kPa, and the contact resistance value with the lower metal wiring (Gate metal) increases above 1000 kPa.

The second conductive layer 180b is a layer for main conduction, and a low resistance metal is preferably used to reduce wiring resistance. For this purpose, Al may be used as the material, and the thickness may be 1000 kPa to 5000 kPa. desirable. This is because when the resistance is 1000 kPa or less, the resistance increases, and when the resistance is 5000 kPa or more, hillock may occur due to an increase in stress.

The third conductive layer 180c is a layer introduced to prevent corrosion of the second conductive layer 180b. The third conductive layer 180c is formed to have a thickness of 10 kPa to 2000 kPa in consideration of the selectivity during etching of the inorganic protective layers 240 and 240a and 240b. For the material, it is preferable to use Ti or TiN. This is because the effect is less than 10Å and the contact resistance increases when the pad (PAD) and the COG (chip on glass) IC are bonded.

The inorganic protective film 240 formed on the sidewalls of the metal wires 180 is formed to prevent corrosion of the second conductive layer 180b of the metal wires 180 from the side surface. It is preferable to be composed of an inorganic material that does not impair reliability. Therefore, SiNx or the like may be used as the material, and the thickness is preferably 1000 Pa to 6000 Pa in consideration of selectivity in dry etching, which will be described later. The inorganic protective film 240 preferably has a shape that becomes thicker toward the lower substrate 110, but is not limited thereto.

On the other hand, the sidewall of the metal wiring 180 is preferably formed in 60 ° to 100 ° with respect to the lower substrate 110 surface in order to facilitate the formation of the inorganic protective film 240. At this time, it will be appreciated by those skilled in the art that it will be more preferable to be formed vertically.

The sealing member 190 is positioned on the upper portion of the metal wire 180 of the edge, and the upper substrate 120 is bonded to the upper portion of the sealing member 190 as described above. In FIG. 5, reference numerals that are not described are the source / drain electrodes 113, the gate electrodes 115, the active layer 117, and the light emitting unit 119.

The pad unit 150 is provided with a terminal 170 that is connected to the metal wires of the image display unit 130. Reference will be made to FIG. 7 to describe the pad unit 150 in more detail. FIG. 7 is a cross-sectional view taken along the line D-D 'of FIG. Accordingly, the terminal 170 of the pad part 150 is disposed on the first conductive layer 170a, the second conductive layer 170b contacting the first conductive layer 170a, and the second conductive layer 170b. And a third conductive layer 170c in contact with each other, and inorganic protective films 140 (140a and 140b) are formed on sidewalls of the terminal 170.

In this case, the first conductive layer 170a is a layer introduced to improve adhesion to the insulating layer 160 and to prevent diffusion of the second conductive layer 170b. For this purpose, Ti or TiN is preferable. The thickness is preferably 10 kV to 1000 kV for the reason as described in the metal wiring.

The second conductive layer 170b is a layer forming a main terminal, and it is preferable to use a low resistance metal to reduce wiring resistance. For this purpose, Al may be used as the material, and it is preferable that the material is 1000 kPa to 5000 kPa. .

The third conductive layer 170c is a layer introduced to prevent corrosion of the second conductive layer 170b. The third conductive layer 170c is formed to have a thickness of 10 kV to 2000 kV in consideration of the selectivity during etching of the inorganic protective film layer, and the material is Ti or It is preferable that it is TiN. If the effect is less than 10Å, the effect is negligible. If it is more than 2000Å, the contact resistance increases when the PAD and COG are bonded to the IC.

The inorganic protective film 140 formed on the sidewall of the terminal 170 is a film formed to prevent the second conductive layer 170b of the terminal 170 from corroding to the side surface. It is preferably composed of an inorganic material that does not damage. Therefore, SiNx or the like may be used as the material, and the thickness is preferably 1000 kPa to 6000 kPa in consideration of selectivity in dry etching, which will be described later. The inorganic protective layer 140 preferably has a shape that becomes thicker toward the lower substrate, but is not limited thereto. This is because the function of the protective film cannot be properly exhibited at 1000 Pa or less, stress is increased at 6000 Pa or more, and hydrogenation is increased to change device characteristics.

Meanwhile, the sidewall of the terminal 170 may be formed at 60 ° to 100 ° based on the lower substrate surface in order to facilitate formation of the inorganic protective layer 140. If the thickness is less than 60 ° SiNx remaining after etching can not act as a protective film, and if more than 100 ° SiNx is difficult to evenly deposited on the metal, that is because the stem coverage (step coverage) is bad. At this time, it will be appreciated by those skilled in the art that it will be more preferable to be formed vertically.

Hereinafter, a method of manufacturing an organic light emitting display device according to the embodiment of the present invention will be described. For convenience of description, the manufacturing method according to the present embodiment includes forming a terminal and a metal wiring with three layers of conductive layers, and forming an inorganic protective film on sidewalls of the terminal and the metal wiring. The above steps may be included at appropriate steps in the conventional and various manufacturing methods of the organic light emitting display device. For example, after forming the insulating layer in the step of forming a thin film transistor having a coplanar structure, which is widely adopted in an organic light emitting display device, the source / drain electrode is formed when a contact hole is formed to form a source / drain electrode. In the same process as the process, the terminal and the metal wiring may be formed, and an inorganic protective film may be formed on the sidewalls of the terminal and the metal wiring.

In the forming of the terminal and the metal wiring, the formation of the terminal and the metal wiring may be performed simultaneously or sequentially. Each conductive layer of the terminal and the metallization is deposited and patterned sequentially.

The inorganic protective film forming step does not exclude performing a photolithography process using a mask, but it is preferable to perform dry etching on the entire surface of the first substrate on which the formation terminal and the metal wiring are formed without going through the complicated process. At this time, when dry etching is performed, the inorganic protective film remains only on the sidewalls of the terminal and the metal wiring, thereby protecting the terminal and the metal wiring. That is, an inorganic protective film is easily formed on the sidewalls of the terminal and the metal wiring unless overetching is performed during dry etching.

Although the present invention has been described primarily with reference to the above embodiments, many other possible modifications and variations can be made without departing from the spirit and scope of the invention. That is, in the above embodiment, it has been described that both the terminal and the metal wiring are composed of three conductive layers, and the inorganic protective film is formed on the sidewalls of both the terminal and the metal wiring. An organic light emitting display device in which a protective film is formed may also be very easily obtained by those skilled in the art. In addition, it will be readily apparent to those skilled in the art that the inorganic protective film may be changed in material, limited in thickness, and applied even when the electrode is formed in multiple layers other than three layers. In addition, those skilled in the art will appreciate that the steps of forming the terminal, the metal wiring, and the inorganic protective film forming step described in the above-described manufacturing method may be modified in a specific step of the manufacturing method of various organic light emitting display devices.

The organic light emitting diode display according to the present invention is a protective film provided on the terminal and / or the metal wiring, and has the effect of preventing corrosion and improving adhesion.

In addition, the manufacturing method of the organic light emitting display device according to the present invention has the effect of providing an appropriate inorganic protective film without a separate mask addition process and photolithography process.

The scope of the above-described invention is defined in the following claims, and is not bound by the description in the text of the specification, all modifications and variations belonging to the equivalent scope of the claims will fall within the scope of the present invention.

Claims (35)

An image display unit including an organic light emitting element on the substrate; A pad unit having at least one terminal electrically connected to the image display unit, The terminal of the pad portion includes a first conductive layer, a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer, And an inorganic passivation layer on sidewalls of the terminals. The method of claim 1, The first conductive layer is Ti or TiN. The method of claim 2, The first conductive layer is an organic light emitting display device having a thickness of 10 ~ 1000Å. The method of claim 1, And the second conductive layer is Al. The method of claim 4, wherein The second conductive layer has a thickness of 1000 kPa to 5000 kPa. The method of claim 1, And the third conductive layer is Ti or TiN. The method of claim 6, The third conductive layer is an organic light emitting display device having a thickness of 10 ~ 2000Å. The method of claim 1, The inorganic protective layer is SiNx. The method of claim 1, And an inorganic passivation layer having a thickness of 1000 mW to 6000 mW. The method of claim 1, The inorganic protective layer is thicker toward the substrate. The method of claim 1, And sidewalls of the terminals are formed at 60 ° to 100 ° with respect to the substrate surface. The method of claim 11, And sidewalls of the terminals are formed at 90 ° with respect to the substrate surface. A method of manufacturing an organic light emitting display device, the method comprising: an image display unit including an organic light emitting element on a substrate; and a pad unit including at least one terminal electrically connected to the image display unit. A terminal forming step of forming the terminal into three layers of conductive layers; And And forming an inorganic protective film on the sidewalls of the terminals. The method of claim 13, The terminal forming step includes forming three conductive layers sequentially on an insulating layer insulating the gate electrode and the source / drain electrodes of the light emitting device, and patterning the conductive layer. The method of claim 13, And forming the gate electrode and the source / drain electrode of the light emitting device. The method of claim 13, The forming of the inorganic protective film comprises depositing an inorganic protective film on the insulating layer and the terminal, and dry etching the entire surface of the substrate to leave an inorganic protective film only on the sidewalls of the terminal. An organic substrate including a first substrate having an image display unit including at least one organic light emitting element, a sealing member provided at an edge of the image display unit, and a second substrate facing the image display unit while being in contact with the sealing member In the light emitting display device, On the edge of the image display unit, a metal wiring contacting the sealing member, comprising a first conductive layer, a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer, is provided. Equipped, And an inorganic passivation layer on the sidewall of the metal line to protect the metal line. The method of claim 17, And the metal wiring is a power line or a data line connected to the light emitting device. The method of claim 18, The first conductive layer is Ti or TiN. The method of claim 19, The first conductive layer is an organic light emitting display device having a thickness of 10 ~ 1000Å. The method of claim 18, And the second conductive layer is Al. The method of claim 21, The second conductive layer has a thickness of 1000 kPa to 5000 kPa. The method of claim 18, And the third conductive layer is Ti or TiN. The method of claim 23, The third conductive layer is an organic light emitting display device having a thickness of 10 ~ 2000Å. The method of claim 18, The inorganic protective layer is SiNx. The method of claim 25, And an inorganic passivation layer having a thickness of 1000 mW to 6000 mW. The method of claim 18, The inorganic protective layer is thicker toward the first substrate side. The method of claim 18, And sidewalls of the metal lines are formed at 60 ° to 100 ° with respect to the first substrate surface. The method of claim 28, The sidewall of the metal line is formed to be 90 degrees with respect to the first substrate surface. An organic substrate including a first substrate having an image display unit including at least one organic light emitting element, a sealing member provided at an edge of the image display unit, and a second substrate facing the image display unit while being in contact with the sealing member In the light emitting display device, A wiring forming step of forming a metal wiring for applying power or data to the light emitting device on the edge of the image display unit as a three-layer conductive layer; And forming an inorganic protective film on the sidewalls of the metal lines. The method of claim 30, The terminal forming step includes forming three conductive layers sequentially on an insulating layer insulating the gate electrode and the source / drain electrodes of the light emitting device, and patterning the conductive layer. The method of claim 30, And forming the gate electrode and the source / drain electrode of the light emitting device. The method of claim 30, The forming of the inorganic protective film comprises depositing an inorganic protective film on the insulating layer and the terminal, and dry etching the entire surface of the substrate to leave an inorganic protective film only on the sidewalls of the terminal. An image display unit including at least one organic light emitting element is formed, the first substrate including a pad unit including at least one terminal electrically connected to the image display unit, a sealing member provided at an edge of the image display unit, and In an organic light emitting display device comprising a second substrate facing the image display portion and in contact with the sealing member, The terminal of the pad portion includes a first conductive layer, a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer, An inorganic protective film is provided on the sidewall of the terminal, On the edge of the image display unit, a metal wiring contacting the sealing member, comprising a first conductive layer, a second conductive layer in contact with the first conductive layer, and a third conductive layer in contact with the second conductive layer, is provided. Equipped, And an inorganic passivation layer protecting the metal line on sidewalls of the metal line. An image display unit including at least one organic light emitting element is formed, the first substrate including a pad unit including at least one terminal electrically connected to the image display unit, a sealing member provided at an edge of the image display unit, and An organic light emitting display device comprising a second substrate facing the image display part and in contact with the sealing member. A wiring forming step of forming a metal wiring for applying power or data to the light emitting element on the edge of the image display unit as a three-layer conductive layer; A terminal forming step of forming the terminal into three layers of conductive layers; Forming a first inorganic protective film on a sidewall of the metal wiring; And And a second inorganic passivation layer forming step of forming an inorganic passivation layer on the sidewalls of the terminals.

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