KR20070000658A - A wafer chuck - Google Patents

A wafer chuck Download PDF

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Publication number
KR20070000658A
KR20070000658A KR1020050056181A KR20050056181A KR20070000658A KR 20070000658 A KR20070000658 A KR 20070000658A KR 1020050056181 A KR1020050056181 A KR 1020050056181A KR 20050056181 A KR20050056181 A KR 20050056181A KR 20070000658 A KR20070000658 A KR 20070000658A
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South Korea
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wafer
wafer stage
divided
displacement
suction hole
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KR1020050056181A
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Korean (ko)
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박준택
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주식회사 하이닉스반도체
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Priority to KR1020050056181A priority Critical patent/KR20070000658A/en
Publication of KR20070000658A publication Critical patent/KR20070000658A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A wafer chuck is provided to minimize processing errors and the waste of time due to contaminants of a wafer backside by using divided wafer stage portions with a wafer support part, a suction hole and a displacement/pressure measuring sensor. A wafer chuck includes a wafer stage, a wafer support part, a suction hole, and a displacement/pressure measuring sensor. The wafer stage(120) is divided into a plurality of wafer stage portions. The height of each wafer stage portion is capable of being adjusted. The wafer support part(135) is installed on each wafer stage portion. The suction hole(130) is installed within each wafer stage portion. The displacement/pressure measuring sensor(160) is installed under each wafer stage portion.

Description

웨이퍼 척{A WAFER CHUCK}Wafer Chuck {A WAFER CHUCK}

도 1은 종래 기술에 따른 웨이퍼 척을 도시한 단면도.1 is a cross-sectional view of a wafer chuck in accordance with the prior art;

도 2는 본 발명의 웨이퍼 척을 개념적으로 도시한 단면도.2 is a cross-sectional view conceptually illustrating a wafer chuck of the present invention;

본 발명은 웨이퍼 척에 관한 것으로, 반도체 공정을 진행하면서 웨이퍼를 웨이퍼 척에 올려놓았을 때, 웨이퍼 후면에 발생하는 오염 물질에 의해 웨이퍼에 수행되는 작업이 정상적으로 진행되지 못하는 문제 및 오염 물질이 웨이퍼 척에 잔류하여 2차적으로 후속의 웨이퍼 작업에 영향을 미치는 문제를 해결하기 위하여, 웨이퍼 척의 웨이퍼 스테이지를 분할한 후 각각의 분할 영역에 웨이퍼 지지대, 진공 흡착 구멍 및 변위/압력 측정 센서를 적어도 하나씩 포함시킴으로써, 반도체 공정을 진행하는데 있어서 웨이퍼 후면에 발생하는 오염 물질에 의해서 발생할 수 있는 공정상의 오류 및 시간적 낭비를 최소화할 수 있는 웨이퍼 척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer chuck, wherein when a wafer is placed on a wafer chuck during a semiconductor process, the work performed on the wafer does not proceed normally due to the contaminants generated on the back surface of the wafer, and the contaminants are placed on the wafer chuck. In order to solve the problem of remaining in the wafer secondary affecting the subsequent wafer operation, by dividing the wafer stage of the wafer chuck, by including at least one wafer support, a vacuum suction hole and a displacement / pressure measuring sensor in each partition area In addition, the present invention relates to a wafer chuck that can minimize process errors and time waste caused by contaminants generated on the back surface of a semiconductor process.

반도체 공정에 있어서 웨이퍼 상부에 필름 형성 공정이 진행됨에 따라 웨이퍼 후면에 각종 무/유기물의 오염 물질이 증착되거나 부착되게 된다. 이러한, 오염 물질이 부착된 웨이퍼는 웨이퍼 척에 올려지면서 문제를 유발시킨다. 웨이퍼 후면 에 부착된 오염 물질에 의해서 웨이퍼 척에 올려진 웨이퍼의 높이가 차이가 나게 되고, 이러한 차이는 노광 공정에 있어서 초점이 맞지 않는 이상을 유발하게 된다.In the semiconductor process, as the film forming process is performed on the upper surface of the wafer, various inorganic and organic contaminants are deposited or adhered to the back surface of the wafer. Such a contaminant-attached wafer causes problems while being placed on a wafer chuck. The contaminants attached to the back of the wafer cause the height of the wafer placed on the wafer chuck to be different, and this difference causes an out-of-focus abnormality in the exposure process.

도 1은 종래 기술에 따른 웨이퍼 척을 도시한 단면도이다.1 is a cross-sectional view showing a wafer chuck according to the prior art.

도 1을 참조하면, 오염 물질(50)을 포함하는 웨이퍼(40)가 진공 흡착방식의 웨이퍼 척(10)에 올려 졌을 경우, 웨이퍼 스테이지(20)의 진공 흡착 구멍(30)을 통하여 공기를 빼내면서 웨이퍼 지지대(35) 위에 올려진 오염 물질(50)이 웨이퍼(40)를 압박하게 되고 결국 웨이퍼(40) 상부의 높이 차를 유발하여 후속 공정에서 노광 공정이 진행될 경우 초점이 틀려지는 포커스 스팟(Focus Spot) 영역(A)을 형성한다.Referring to FIG. 1, when the wafer 40 including the contaminant 50 is placed on the vacuum chuck wafer chuck 10, air is drawn out through the vacuum suction hole 30 of the wafer stage 20. While the contaminant 50 placed on the wafer support 35 presses the wafer 40 and eventually causes a height difference on the upper portion of the wafer 40, the focus spot that is out of focus when the exposure process is performed in a subsequent process ( Focus Spot) region A is formed.

한편, 웨이퍼(40)를 웨이퍼 스테이지(20)에 진공 흡착 방식으로 고정시킨 후 이들을 다시 분리시키면서 웨이퍼(40) 후면에 부착된 오염 물질(50)이 웨이퍼 스테이지(20)에 잔류하는 문제가 있다. 잔류된 오염 물질(50)은 후속의 다른 웨이퍼가 올려질 때 2차 오염을 유발하는 문제를 발생시킨다.On the other hand, after fixing the wafer 40 to the wafer stage 20 by vacuum adsorption, there is a problem that the contaminants 50 attached to the back surface of the wafer 40 remain on the wafer stage 20 while separating them again. Residual contaminants 50 create a problem that causes secondary contamination when subsequent wafers are loaded.

이러한 문제를 해결하기 위하여, 웨이퍼 척에 웨이퍼를 올리기 전에 별도의 습식 세정 공정을 수행하게 되는데 이러한 추가적인 세정 공정은 반도체 공정의 시간과 비용을 증가시키는 원인이 된다.In order to solve this problem, a separate wet cleaning process is performed before the wafer is placed on the wafer chuck, which further increases the time and cost of the semiconductor process.

상기와 같은 문제점을 해결하기 위하여, 웨이퍼 척의 웨이퍼 스테이지를 분할한 후 각각의 분할 영역에 웨이퍼 지지대, 진공 흡착 구멍 및 변위/압력 측정 센서를 적어도 하나씩 포함시킴으로써, 반도체 공정을 진행하는데 있어서 웨이퍼 후 면에 발생하는 오염 물질에 의해서 발생할 수 있는 공정상의 오류 및 시간적 낭비를 최소화할 수 있는 웨이퍼 척을 제공하는 것을 그 목적으로 한다.In order to solve the above problems, after dividing the wafer stage of the wafer chuck, at least one wafer support, a vacuum suction hole, and a displacement / pressure measuring sensor are included in each divided area, so that the back surface of the wafer in the semiconductor process can be processed. It is an object of the present invention to provide a wafer chuck that can minimize process errors and time waste caused by contaminants generated.

상기와 같은 본 발명의 목적을 달성하기 위한 것으로, 본 발명에 따른 웨이퍼 척은In order to achieve the object of the present invention as described above, the wafer chuck according to the present invention

높이가 조절 되는 적어도 하나 이상의 분할 영역이 포함되는 웨이퍼 스테이지와,A wafer stage including at least one divided region whose height is adjusted,

상기 분할 영역 상부에 각각 구비되는 웨이퍼 지지대와,A wafer support provided on each of the divided regions,

상기 분할 영역에 각각 구비되는 진공 흡착 구멍 및A vacuum suction hole provided in each of the divided regions, and

상기 웨이퍼 스테이지의 각 분할 영역 하부에 구비되는 변위/압력 측정 센서를 포함하는 것을 특징으로 한다.It characterized in that it comprises a displacement / pressure measuring sensor provided under each divided area of the wafer stage.

이하, 첨부된 도면을 참조하여 본 발명에 따른 웨이퍼 척에 관하여 상세히 설명하면 다음과 같다. Hereinafter, a wafer chuck according to the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 웨이퍼 척을 개념적으로 도시한 단면도이다.2 is a cross-sectional view conceptually illustrating a wafer chuck of the present invention.

도 2를 참조하면, 진공 흡착 방식을 이용하는 웨이퍼 척(100)을 개략적으로 도시한 것으로, 웨이퍼 스테이지(120)에 적어도 하나 이상의 분할 영역(110)이 구비된다. 각각의 분할 영역(110) 상부에는 웨이퍼 지지대(135)가 구비되며, 진공 흡착 구멍(130)도 하나의 분할 영역(110)에 하나씩 구비된다. 또한, 각 분할 영역(110)의 하부에 변위/압력 측정 센서(160)가 각각 하나씩 구비된다. 여기서, 웨이퍼(140) 후면에 오염 물질(150)이 형성된 것을 볼 수 있지만, 종래 같은 포커스 스 팟 영역이 형성되지 않는다.Referring to FIG. 2, a wafer chuck 100 using a vacuum adsorption method is schematically illustrated, and at least one divided region 110 is provided on the wafer stage 120. A wafer support 135 is provided on each of the divided regions 110, and one vacuum suction hole 130 is provided in one divided region 110. In addition, one displacement / pressure measuring sensor 160 is provided at the lower portion of each divided area 110. Here, it can be seen that the contaminant 150 is formed on the back surface of the wafer 140, but the focus spot region as in the prior art is not formed.

이와 같이, 하나의 분할 영역에는 웨이퍼 지지대, 진공 흡착 구멍 및 변위/압력 측정 센서가 적어도 하나씩 포함되며, 각 분할 영역이 결합되어 하나의 웨이퍼 스테이지를 구성하게 된다. As such, one divided area includes at least one wafer support, a vacuum suction hole, and a displacement / pressure measuring sensor, and each divided area is combined to form one wafer stage.

아울러, 본 발명에 따른 웨이퍼 척은 웨이퍼 스테이지 상부에 웨이퍼가 올라갔을 때, 각 분할 영역에 가해지는 압력이 동일하게 유지되도록 웨이퍼 스테이지의 각 분할 영역 높이 및 압력을 조절하는 장치 및 웨이퍼 스테이지 하부에 진공 흡착을 위한 설비를 더 포함한다.In addition, the wafer chuck according to the present invention is an apparatus for adjusting the height and pressure of each divided region of the wafer stage and the vacuum at the bottom of the wafer stage so that the pressure applied to each divided region is kept the same when the wafer is raised above the wafer stage. It further comprises a facility for adsorption.

웨이퍼가 웨이퍼 스테이지에 올려졌을 경우 각 분할 영역에 미치는 압력이 동일하게 되도록 웨이퍼 스테이지의 분할 영역이 설계되어야 한다. 따라서, 본 발명에 따른 웨이퍼 척은 웨이퍼 후면에 오염 물질이 존재할 경우 오염 물질과 맡 닿는 분할 영역의 압력이 올라가게 되므로 변위/압력 측정 센서에 의해서 웨이퍼 전면에 대하여 동일한 압력에 대한 당 분할 영역의 변위 값이 계산되고, 그에 따라 분할 영역의 위치를 변형시키면서 웨이퍼의 수평이 맞추어 지게 된다.When the wafer is placed on the wafer stage, the divided area of the wafer stage must be designed so that the pressure on each divided area is the same. Therefore, in the wafer chuck according to the present invention, when the contaminant is present on the back surface of the wafer, the pressure of the divided region that is in contact with the contaminant is increased, so that the displacement of the divided region for the same pressure with respect to the front surface of the wafer by the displacement / pressure measuring sensor. The value is calculated so that the wafer is leveled while deforming the position of the partition.

상술한 바와 같이, 웨이퍼 척의 웨이퍼 스테이지를 분할한 후 각각의 분할 영역에 웨이퍼 지지대, 진공 흡착 구멍 및 변위/압력 측정 센서를 적어도 하나씩 포함시킴으로써, 리소그래피 공정을 수행할 경우 웨이퍼 후면에 발생하는 어떤 오염물질에도 영향을 받지 않고 웨이퍼 수평을 유지 할 수 있으며, 초점이 맞지 않아 오류가 발생하는 문제를 해결할 수 있다. As mentioned above, after dividing the wafer stage of the wafer chuck, each divided area includes at least one wafer support, a vacuum suction hole, and a displacement / pressure measuring sensor, so that any contaminants generated on the back surface of the wafer during the lithography process are performed. It is possible to keep the wafer level unaffected and to solve the problem of errors due to out of focus.

이상에서 상세히 설명한 바와 같이, 웨이퍼 척의 웨이퍼 스테이지를 분할한 후 각각의 분할 영역에 웨이퍼 지지대, 진공 흡착 구멍 및 변위/압력 측정 센서를 적어도 하나씩 포함시킴으로써, 반도체 공정을 진행하는데 있어서 웨이퍼 후면에 발생하는 오염 물질에 의해서 발생할 수 있는 공정상의 오류 및 시간적 낭비를 최소화할 수 있다. 따라서, 반도체 생산 공정의 시간 및 비용을 절감하고 수율을 증가시킬 수 있는 효과를 제공한다.As described in detail above, after dividing the wafer stage of the wafer chuck, at least one wafer support, a vacuum suction hole, and a displacement / pressure measuring sensor are included in each divided area, thereby causing contamination on the back surface of the wafer in the process of semiconductor processing. Process errors and time waste that can be caused by the material can be minimized. Thus, it provides an effect that can reduce the time and cost of the semiconductor production process and increase the yield.

아울러 본 발명의 바람직한 실시예는 예시의 목적을 위한 것으로, 당업자라면 첨부된 특허청구범위의 기술적 사상과 범위를 통해 다양한 수정, 변경, 대체 및 부가가 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구범위에 속하는 것으로 보아야 할 것이다.In addition, a preferred embodiment of the present invention is for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as belonging to a range.

Claims (4)

높이가 조절 되는 적어도 하나 이상의 분할 영역이 포함되는 웨이퍼 스테이지;A wafer stage including at least one divided area whose height is adjusted; 상기 분할 영역 상부에 각각 구비되는 웨이퍼 지지대;A wafer supporter provided on each of the divided regions; 상기 분할 영역에 각각 구비되는 진공 흡착 구멍; 및A vacuum suction hole provided in each of the divided regions; And 상기 웨이퍼 스테이지의 각 분할 영역 하부에 구비되는 변위/압력 측정 센서를 포함하는 것을 특징으로 하는 웨이퍼 척.And a displacement / pressure measuring sensor provided under each division area of the wafer stage. 제 1 항에 있어서,The method of claim 1, 상기 웨이퍼 스테이지에 웨이퍼가 올라갔을 때, 각 분할 영역에 가해지는 압력이 동일하게 유지되도록 웨이퍼 스테이지의 각 분할 영역 높이 및 압력을 조절하는 장치를 상기 웨이퍼 스테이지 하부에 포함하는 것을 특징으로 하는 웨이퍼 척.And a device at the bottom of the wafer stage for adjusting the height and pressure of each divided region of the wafer stage so that the pressure applied to each divided region remains the same when the wafer is raised on the wafer stage. 제 1 항에 있어서,The method of claim 1, 상기 각 분할 영역은 웨이퍼로부터 받는 압력이 동일하게 유지될 수 있도록 설계된 것을 특징으로 하는 웨이퍼 척.Each of the divided regions is designed to maintain the same pressure received from the wafer. 제 1 항에 있어서,The method of claim 1, 상기 웨이퍼 스테이지 하부에 진공 흡착을 위한 설비를 구비하는 것을 특징 으로 하는 웨이퍼 척.And a device for vacuum adsorption beneath the wafer stage.
KR1020050056181A 2005-06-28 2005-06-28 A wafer chuck KR20070000658A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109759721A (en) * 2018-12-28 2019-05-17 武汉华星光电技术有限公司 Cutting equipment and cutting method
US10825703B2 (en) 2017-05-02 2020-11-03 Samsung Electronics Co., Ltd. Chuck stage particle detection device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10825703B2 (en) 2017-05-02 2020-11-03 Samsung Electronics Co., Ltd. Chuck stage particle detection device
CN109759721A (en) * 2018-12-28 2019-05-17 武汉华星光电技术有限公司 Cutting equipment and cutting method

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