KR20060130295A - Block insulator of ion implanter - Google Patents

Abstract

A block insulator of an ion implanter is provided to prevent beam deposition onto the block insulator by adding a protective shield on the block insulator. First and second insulators(102,104) are provided on one side of an arc chamber of a source head of an ion implanter, and are connected to each other to constantly maintain an interval between the insulators and a filament clamp. A protective shield(106) is provided on an upper end of the first insulator to protect source head short due to beam deposition. The protective shield has a shield portion(106a) for protecting the upper end of the first insulator and a fastening portion(106b) with both ends connected to the second insulator.

Description

BLOCK INSULATOR OF ION IMPLANTER

1 shows a block insulator structure of a typical ion implantation facility; And

2 is a view showing a block insulator structure of an ion implantation facility according to the present invention.

Explanation of symbols on the main parts of the drawings

100: block insulator

102: first insulator

104: second insulator

106: protective shield

106a: shield

106b: Fastening part

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor fabrication equipment, and more particularly to block insulators for preventing source head shorts of ion implantation equipment.

Among semiconductor manufacturing facilities, ion implantation equipment for injecting impurities into a wafer is provided with an ion source for generating an ion beam. The ion source focuses and accelerates ions generated by arc discharge by a high potential difference between electrodes to generate an ion beam. The ion source is provided with a portion that ionizes the dopant, which is the source head. The source head includes an arc chamber, a filament, a cathode, a cathode insulator, and the like.

In the process of ionizing the dopant in the source head, the filament is heated when a current is first applied to the filament. In the heated filament, hot electrons are emitted, and the hot electrons collide with the cathode due to the potential difference with the cathode, thereby heating the cathode secondarily. Secondary hot electrons are emitted from the surface of the heated cathode, i.e., the inner surface of the arc chamber, and the dopant molecules are ionized when they collide with the dopant molecules by the potential difference in the arc chamber. The ionized dopant can generate an ion beam by focusing and accelerating using a high potential difference.

Referring to FIG. 1, a source head for generating an ion beam among components of a semiconductor manufacturing facility, for example, a varian ion implantation facility (model name VIISTA80) includes a block insulator 10. The block insulator 10 includes first and second insulators 12, 14. However, as time passes, the block insulator 10 may cause a beam to be deposited on the surface of the first insulator 12, resulting in a short circuit.

As described above, the ion implantation apparatus is an apparatus that generates an ion plasma inside the arc chamber, and then extracts the plasma from the arc chamber by the difference in electrical potential energy and injects it into the wafer. The key to the ion source of an ion implantation facility is to maintain the insulation of the block insulator. However, block insulators are beam deposited over time, resulting in shorts and shorter source lifetimes.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems, and to provide a block insulator for preventing source head shorting of an ion implantation facility and improving a decrease in facility operation rate.

Another object of the present invention is to provide a block insulator that minimizes contamination of an ion implantation facility, prevents source head short-circuits in a short time, and can be used many times after cleaning.

The block insulator of the ion implantation apparatus of the present invention for achieving the above object is characterized by having a protective shield for preventing a short by the beam deposition. This block insulator prevents source head shorts and improves plant utilization.

The block insulator of the ion implantation apparatus of the present invention comprises: first and second insulators provided on one side of the arc chamber of the source head of the ion implantation apparatus and coupled to each other to maintain a constant distance from the filament clamp; It includes a protective shield provided on the upper end of the first insulator to prevent a short due to the beam deposition.

In one embodiment, the protective shield is preferably provided with a ceramic material.

In one embodiment, the protective shield; And a shield portion protecting the upper end of the first insulator, and a fastening portion extending from the shield portion and coupled to both sides of the second insulator.

DETAILED DESCRIPTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing a block insulator structure of an ion implantation facility according to the present invention.

Referring to FIG. 2, the block insulator 100 includes first and second insulators 102 and 104 provided at one side of an arc chamber of a source head of an ion implantation facility, and a protective shield fastened to an upper end of the first insulator 102. (shield) 106.

The first and second insulators 102 and 104 are coupled to each other back and forth to maintain an interval with the filament clamp (not shown) to maintain an insulation state with the filament clamp.

The protective shield 106 is provided at the upper end of the first insulator 102 to protect the block insulator 100 to prevent a source head short phenomenon caused by beam deposition. The protective shield 106 is preferably provided with a ceramic material to reduce the manufacturing cost.

In addition, the protective shield 106 extends to both sides of the shield portion 106a for protecting the upper end of the first insulator 102 and the shield portion 106a, and is coupled to the front face of the second insulator 104 on both sides of the extended shield. And a fastening portion 106b.

Therefore, the block insulator 100 of the present invention can take an insulation state for a long time. That is, the block insulator 100 may include a protective shield 106 to protect the block insulator 100 from being contaminated, thereby preventing source head short circuits in a short time.

As described above, if the block insulator of the present invention is too spaced apart from the filament clamp, the block insulator has a short so that a constant distance must be maintained. For example, although 12 lines are made of aluminum for the cost of block insulators, the 12 lines are more effective if they are made of a ceramic material that can absorb beam deposition.

In addition, the block insulator of the present invention minimizes contamination due to beam deposition to prevent source head short-circuits in a short time, and since the unit price of the block insulator is expensive, the block insulator can be regenerated and used several times.

In the above, the configuration and operation of the regulator according to the present invention has been shown in accordance with the above description and drawings, but this is merely an example, and various changes and modifications are possible without departing from the technical spirit of the present invention. .

As described above, the present invention can maintain the insulation state for a long time by adding a protective shield to the block insulator holding the source head insulator to prevent beam deposition on the block insulator.

In addition, when the expensive block insulator has a protective shield and a beam is deposited, it can be reused many times after cleaning.

Claims (3)

In the block insulator of the ion implantation equipment: First and second insulators provided on one side of an arc chamber of the source head of the ion implantation facility and coupled to each other to maintain a predetermined distance from the filament clamp; The block insulator of claim 1, further comprising a protective shield provided at an upper end of the first insulator to prevent a short due to beam deposition. The method of claim 1, The protective shield is insulated, characterized in that provided with a ceramic material. The method according to claim 1 or 2, The protective shield; A shield portion protecting the first insulator upper end portion; Block insulator extending to the shield portion, characterized in that it comprises a fastening portion coupled to both sides of the second insulator extended.

Images