KR20060099316A - Gas supply apparatus having a temperature sensing unit - Google Patents

Abstract

The gas supply apparatus having the disclosed temperature sensing unit is connected to a gas supply passage and a chamber in which a gas storage container storing a deposition gas to be supplied to the chamber and a chamber in which a process is performed is connected to the gas storage container and a chamber to supply the deposition gas to the chamber. And a bypass flow passage in which waste gas is communicated with each other, and a bypass flow passage branched from the gas supply flow passage to communicate with the exhaust flow passage, and a temperature sensing unit for sensing a temperature of the gas supply flow passage and the bypass flow passage to control the process. The temperature sensing unit receives the temperature values measured from the first and second temperature sensors and the first and second temperature sensors installed in the gas supply passage and the bypass passage, compares them with the preset temperature values, and when the temperature is lower than the preset temperature values, the process is performed. It includes a control unit to stop. In addition, the first and second temperature sensors may be configured of bimetal to signal the controller when the temperature is lower than the temperature required for the process to stop the process.

Description

GAS SUPPLY APPARATUS HAVING A TEMPERATURE SENSING UNIT}

1 is a block diagram showing a conventional gas supply device.

Figure 2 is a block diagram showing a gas supply device having a temperature sensing unit of the present invention.

3 is a block diagram showing the operation of the temperature sensing unit according to the present invention.

4 is an enlarged partial cross-sectional view of a display A shown in FIG. 2.

** Explanation of Signs of Major Parts of Drawings **

100: chamber

110: valve

150: injection valve

200: gas storage container

310: gas supply passage

330: bypass flow

410: first temperature sensor

420: second temperature sensor

500: control unit

600: Indicator

700: Alarm

The present invention relates to a gas supply device having a temperature sensing unit, and more particularly, to detect a temperature of a gas supply flow path and a bypass flow path being heated in real time, and to stop the process when the temperature of the flow path becomes below a temperature required for the process. A gas supply apparatus having a unit is provided.

In general, there is a boron phosphosilica-glass (BPSG) deposition process for the purpose of insulation and planarization. In this process, the atmosphere in the chamber is formed at about 200 torr and 480 ° C. The carrier gas (N ₂ , He), TEOS (Tetra-Ethyl-DrthoSlicate) and TEOP (Tri-) are formed on the wafer located in the chamber. It is a process of forming an insulating film by supplying deposition gases such as ethyl-phosphate and tri-ethyl-borate (TEB).

In order to perform the above process, a semiconductor deposition apparatus is typically used, and in particular, a chemical vapor deposition apparatus is used to manufacture a planarization film (BPSG).

The chemical vapor deposition apparatus is provided with a gas supply device for supplying the carrier gas and the deposition gases as described above.

1 is a block diagram showing a gas supply device used in a conventional BPSG deposition process.

Referring to FIG. 1, a gas supply apparatus used in a conventional BPSG deposition process includes a chamber 100 in which a deposition process is performed, gas storage containers 200 respectively storing a plurality of deposition gases, and a gas storage container. A gas supply passage 310 connecting the field 200 and the chamber 100, an exhaust passage 340 for exhausting the waste gas in the chamber 100 after the process is performed, a gas supply passage 310 and an exhaust passage ( It is composed of a bypass passage 330 connecting the 340.

The bypass passage 330 bypasses the exhaust passage 340 before the deposition gas is supplied to the chamber 100 to stabilize the gas flow.

In addition, although not shown in the drawing, a heating jacket is provided on the outer surface of the gas supply passage 310 to heat the gas supply passage 310, for example, to 105 ° C. or more.

In addition, on the gas supply passage 310, when the temperature of the gas supply passage 310 is 105 ° C. or lower, a temperature sensor 120 is installed to detect the process and stop the process.

Carrier gas nitrogen and helium are supplied to the gas supply passage 310 in a state in which the wafer is loaded into the chamber 100 to deposit BPSG on a wafer (not shown) using the gas supply apparatus as described above. In addition, as the injection valve 150 is opened, TEOS, TEOP, and TEB are supplied from the gas storage vessels 210, 220, and 230 to the gas supply passage 310.

Here, each of the injection valves 150 vaporizes TEOS, TEOP, and TEB, and mixes the vaporized deposition gas with the carrier gas and supplies it into the chamber 100.

In this case, the mixed deposition gas as described above is supplied into the chamber 100 through the gas supply passage 310, and at the same time, the valve 110 installed on the bypass passage 330 is opened to smooth the gas flow.

The gas supply passage 310 is heated to 105 ° C. or higher due to the heating jacket.

As described above, the deposition gas that is mixed with the carrier gas and supplied into the chamber 100 has a characteristic of changing state into a liquid phase in an atmosphere of 105 ° C. or less.

Therefore, the temperature sensor 120 installed on the gas supply passage 310 detects this and stops the process by stopping the supply of the deposition gas and the carrier gas when the detected temperature is 105 ° C. or lower.

However, there is no separate temperature sensor on the bypass passage 330 for smooth gas flow.

Therefore, if the heating jacket installed on the outer surface of the bypass passage 330 malfunctions or is damaged, the bypass passage 330 is not heated to 105 ° C. or higher, so that the deposition gas supplied into the bypass passage 330 changes into a liquid phase. do.

Therefore, when the process proceeds as it is while the deposition gas is liquefied, contaminants are generated in the bypass passage 330 and there is a problem of contaminating the inside of the bypass passage 330.

In addition, the contaminants generated as described above may be flowed back into the chamber 100. In this case, particles are deposited on the wafer to cause product defects.

Therefore, the present invention has been made to solve the above problems, an object of the present invention is to install a temperature sensor in the gas supply flow path and the bypass flow path to the deposition gas during the BPSG deposition process gas supply flow path and bypass flow path It is to provide a gas supply device having a temperature sensing unit to stop the process immediately when the temperature falls below the temperature required for the process to suppress the generation of contaminants in the flow path and improve the product yield.

Gas supply apparatus having a temperature sensing unit of the present invention for solving the above problems is a chamber in which the process is performed; A gas storage container storing the deposition gas to be supplied to the chamber; A gas supply passage communicating the gas storage container with the chamber to supply deposition gas to the chamber; An exhaust passage communicating with the chamber for exhausting waste gas; A bypass passage branched from the gas supply passage to communicate with the exhaust passage; And a temperature sensing unit for controlling a process by sensing a temperature of the gas supply passage and the bypass passage.

Here, the temperature sensing unit may receive a first temperature sensor installed in the gas supply passage, a second temperature sensor installed in the bypass passage, and temperature values measured from the first and second temperature sensors, and may be different from each other. And a control unit for stopping the process when the temperature is lower than the preset temperature value.

The controller may further include an indicator configured to visualize the temperature values measured by the first and second temperature sensors in real time.

On the other hand, the temperature sensing unit is installed in the gas supply passage and the first temperature sensor for generating an electrical signal when the predetermined temperature, and the second temperature sensor is installed in the bypass passage to generate an electrical signal when the predetermined temperature, It may include a control unit for receiving an electrical signal from the first and second temperature sensor to stop the process.

Here, the first and second temperature sensors are preferably any one of bimetal or shape memory alloy.

Furthermore, it is preferable that the alarm is further installed in the control unit to notify the process.

Hereinafter, with reference to the accompanying drawings will be described a preferred embodiment of the gas supply device having a temperature sensing unit of the present invention.

Figure 2 is a block diagram showing a gas supply device having a temperature sensing unit of the present invention.

Here, a preferred embodiment of the present invention will be described taking the process of forming the BPSG on the wafer using a deposition gas, such as TEOS, TEOP, TEB.

Referring to FIG. 2, a gas supply apparatus having a temperature sensing unit of the present invention for performing a BPSG deposition process includes a chamber 100 in which a wafer (not shown) is loaded, and a deposition gas to be supplied to the chamber 100. The gas storage vessels 200 to be stored and the gas supply passage 310 communicating with the gas storage vessels 200 and the chamber 100 are installed.

Gas storage containers are composed of the first, second, third gas storage containers (210, 220, 230) for storing TEOS, TEOP, TEB, respectively, and the first, second, third gas storage containers (210, 220, 230) and The gas supply passage 310 communicates with the gas passage 320.

The valve 110 for controlling the flow of the deposition gas is installed in the gas passage 320, and the injection valves 150 are installed in a portion communicating with the gas passage 320 and the gas supply passage 310.

The injection valves 150 supply TEOS, TEOP, and TEB to the gas supply passage 310 in a vaporized state.

In addition, a carrier gas supply passage 360 extending to the gas supply passage 310 and supplying nitrogen (N ₂ ) and helium (He), which are carrier gases mixed with the deposition gases, is further installed.

In addition, the chamber 100 is provided with an exhaust passage 340 in which a pump 180 is installed to exhaust the waste gas in the chamber 100 after the process is performed.

When the deposition gas is supplied to the chamber 100, the gas supply passage 310 is further provided with a bypass passage 330 communicating with the exhaust passage 340 to smooth the gas flow.

On the chamber 100 side gas supply passage 310 and the bypass passage 330, a valve 110 for controlling the flow of the deposition gas is provided.

In particular, referring to Figure 4, the outer surface of the gas supply passage 310 and the bypass passage 330 is provided with a heating jacket 350 for heating to a temperature required for the process, for example, 105 ℃ or more. The heating jacket 350 has a structure in which the heating wire 351 is installed therein.

And a temperature sensing unit for controlling the process according to the temperature change in the gas supply passage 310 and the bypass passage 330 is installed.

Next, the configuration of the temperature sensing unit will be described.

2 and 3, the temperature sensing unit includes a first temperature sensor 410 installed in the gas supply passage 310 on the chamber 100 side, and a second temperature sensor 420 installed in the bypass passage 330. ) And a control unit 500 which stops the process when the temperature values measured by the first and second temperature sensors 410 and 420 are lower than the predetermined temperature value by comparing with the predetermined temperature value.

The control unit 500 is electrically connected to the valve driving unit 190 to control the opening and closing of each valve 110 to stop the process.

The control unit 500 further has an indicator 600 for real-time visualization of the temperature values of the gas supply passage 310 and the bypass passage 330 measured from the first and second temperature sensors 410 and 420. It further has an alarm 700 for notifying stop.

It will be described the operation and effect of the preferred embodiment of the present invention through the above configuration.

2 and 3, the wafer is positioned in the chamber 100, and in order to perform the BPSG deposition process on the wafer, the controller 500 opens the valve 110 to gas carrier gases such as nitrogen and helium gas. It flows into the supply passage 310.

Subsequently, the deposition gases stored in the first, second, and third gas storage containers 210, 220, and 230 are opened by the valves 110 and flow to the injection valve 150 through the gas flow path 320, and the injection valve 150. ) Vaporizes and supplies the deposition gas into the gas supply passage 310.

Therefore, the deposition gas and the carrier gas are mixed and flow through the gas supply passage 310 to the chamber 100.

The mixed deposition gas as described above flows into the chamber 100 and flows into the bypass passage 330 branched from the gas supply passage 310 to smoothly flow the gas.

At this time, the valve 110 installed on the gas supply passage 310 and the bypass passage 330 is in an open state. And the valve 110 on the exhaust passage 340 is closed.

As described above, the gas supply passage 310 and the bypass passage 330 are heated to a temperature necessary for the process through the heating jacket 350 (see FIG. 4) while the deposition gas is supplied to the chamber 100.

Therefore, the deposition gas mixed through the gas supply passage 310 and the bypass passage 330 as described above is supplied to the chamber 100 to form the BPSG on the wafer.

In this case, the first and second temperature sensors 410 and 420 measure the temperatures of the gas supply passage 310 and the bypass passage 330 and transmit the measured temperature values to the controller 500.

The control unit 500 compares the temperature values transmitted as described above with a predetermined temperature value and transmits a signal to the valve driving unit 190 to close all the valves 110 when any one is lower than the predetermined temperature value. In addition, the process is stopped.

Herein, the controller 500 visualizes the temperature values measured by the first and second temperature sensors 410 and 420 through the display 600 in real time.

As described above, the control unit 500 immediately generates a warning signal indicating that the process is stopped by signaling to the alarm 700.

Therefore, the heating jacket 350 for heating the gas supply flow passage 310 and the bypass flow passage 330 is broken so that the temperature in one of the gas supply flow passage 310 and the bypass flow passage 330 is a process temperature, for example, 105 ° C. or less. In the case of lowering, the deposition gas is changed into a liquid state to prevent generation of contaminants in the flow paths 310 and 330.

The first and second temperature sensors 410 and 420 in the above-described preferred embodiment have an electronic temperature sensor as an example.

That is, referring to FIG. 4, the thermocouple 421 is inserted and installed to sense the temperature in the gas supply passage 310 and the bypass passage 330 by using the thermocouple 421, and the thermocouple 421 is first installed. By electrically connecting to the control unit 500 through the two temperature sensors 410 and 420, the control unit 500 may receive the measured temperature values in real time.

Although not shown in the drawings, the first and second temperature sensors described above in the preferred embodiment may use a bimetal or a shape memory alloy.

That is, the temperature sensing unit includes electrical signals from the first and second temperature sensors 410 and 420 and the first and second temperature sensors 410 and 420 provided in the gas supply passage 310 and the bypass passage 330 made of bimetal. It can be configured as a control unit 500 to stop the process.

The bimetal joins two kinds of metal pieces having very different expansion coefficients, and when the predetermined temperature reaches a predetermined temperature, the bimetal is bent to one side to switch a switch (not shown) to transmit a signal to the controller 500.

For example, when the temperature is 105 ° C. or lower, the shape is changed as described above to switch the switch, and the control unit 500 receives the switched electrical signal as described above, so that the gas supply passage 310 and the bypass passage 330 are 105 ° C. Detect that it is below temperature.

In addition, the first and second temperature sensors 410 and 420 may be used as shape memory alloys.

For example, there is no shape deformation at 105 ° C or higher, and when the temperature is 105 ° C or lower, it is deformed to its original shape to switch the switch.

Therefore, the control unit 500 receives the electrical signal generated by the switching to sense as described above.

Therefore, as described above, the bimetal and the shape memory alloy are electrically switched to any one of the first and second temperature sensors 410 and 420 in response to the temperatures of the gas supply passage 310 and the bypass passage 330. When the control unit 500 receives an electrical signal, the valve 110 closes all the valves 110 through the valve driving unit 190 and stops the process.

Subsequently, the controller 500 generates an alarm for notifying the process stop through the alarm 700.

Accordingly, as in the above-described preferred embodiment, contaminants may be generated in the bypass passage 330 by preventing the deposition gas flowing in the gas supply passage 310 and the bypass passage 330 from changing into a liquid phase. And prevent such contaminants from entering the chamber 100 and depositing particles on the wafer.

Therefore, according to the present invention, when the temperature of the gas supply passage and the bypass passage for supplying the deposition gas to the chamber is lowered to the temperature required for the process in real time, the deposition gas is liquefied by immediately halting the process so that contaminants may be contained in the flow path. It can be prevented from occurring, and also contaminants can be prevented from entering the chamber to contaminate the wafer.

Therefore, it prevents process accidents and improves product yield.

Claims (6)

A chamber in which the process is performed; A gas storage container storing the deposition gas; A gas supply passage communicating the gas storage container with the chamber to supply the deposition gas to the chamber; An exhaust passage communicating with the chamber for exhausting waste gas; A bypass passage branched from the gas supply passage to communicate with the exhaust passage; And And a temperature sensing unit for controlling a process by sensing a temperature of the gas supply passage and the bypass passage. The method of claim 1, The temperature sensing unit receives a first temperature sensor installed in the gas supply passage, a second temperature sensor installed in the bypass passage, and temperature values measured from the first and second temperature sensors and compares them with a predetermined temperature value. And a control unit for stopping the process when the temperature is lower than a predetermined temperature value. The method of claim 2, The control unit is a gas supply device having a temperature sensing unit, characterized in that the display further comprises a display for real-time visualization of the temperature values measured from the first and second temperature sensor. The method of claim 1, The temperature sensing unit is installed in the gas supply passage and the first temperature sensor for generating an electrical signal when the predetermined temperature, and the second temperature sensor is installed in the bypass passage to generate an electrical signal when the predetermined temperature, and the first Gas supply device having a temperature sensing unit, characterized in that it comprises a control unit for stopping the process by receiving an electrical signal from the 1,2 temperature sensor. The method of claim 4, wherein And said first and second temperature sensors are bimetals. The method according to any one of claims 2 to 4, The control unit is a gas supply device having a temperature sensing unit, characterized in that the alarm further notifies the process is installed.

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