KR20060093732A - Multilayer solar cell - Google Patents

Abstract

A multilayer solar cell (200) comprising four kinds of solar cell modules (90, 100, 70, 60) having different sensitivity wavelength bands and laid integrally in layers by incorporating four solar cell modules such that a module having a shorter central wavelength in the sensitivity wavelength band is located closer to the solar beam incident side. Three kinds of solar cell modules (90, 100, 70) are constituted, respectively, of cell group modules including a plurality of spherical solar cells (30, 40, 10) arranged in a plurality of rows and columns and the solar cell module (60) in the lowermost layer is constituted of a planar light receiving module.

Description

Multilayer Solar Cells {MULTILAYER SOLAR CELL}

The present invention is a laminated solar cell in which two or more kinds of solar cell modules having different sensitivity wavelength bands are laminated in order to effectively use a wide range of wavelength components in the solar spectrum, and a plurality of spherical solar cells as at least one solar cell module. The present invention relates to a stacked solar cell incorporating a cell group module incorporating a cell.

The spectrum of sunlight has a broad wavelength range from ultraviolet to far infrared with a peak around 600 nm on the ground. In order to receive such solar light and convert it efficiently into electrical energy, the solar cell which relies on a single energy bandgap has a limited spectral range, and there is a limit in increasing the efficiency of photoelectric conversion. Therefore, the solar spectrum is divided into a plurality of sensitivity wavelength bands, and various kinds of solar cell modules (or urea solar cells or solar cell layers) capable of photoelectric conversion efficiently for each sensitivity wavelength band are made, and they are The solar cell which has a structure which laminates | stacks in order from the incident side of sunlight to the short wavelength (large bandgap) of a sensitivity wavelength band, absorbs a wide range of solar spectrum, and photoelectrically converts is proposed.

The conventional solar cells proposed so far are as follows.

(a) The solar cell which divided into several wavelength bands through the optical filter mirror, and arrange | positioned the several kind of independent solar cell module suitable for each sensitivity wavelength band on each optical path. This is described by N.S.Alvi, C.E.Bakus and G.W.Madesen, “Potential For Increasing the Efficiency of Photovoltaic Systems by Using Multiples Cell Concept”, Conf. Proc. 12th IEEE Photovoltaic Specialist Conference 957 (1976).

(b) A solar cell in which a plurality of semiconductor layers having different energy band gaps are successively crystal-grown on a common substrate to integrally stack two solar cell layers.

(c) A solar cell in which plural kinds of solar cell panels are made individually using semiconductors having different sensitivity wavelength bands (bandgap), and these solar panels are arranged on an optical path of sunlight.

(B) and (c) are described in A.W.Bett, F.Dimroth, G.Stollwerck, O.V.Sulima “III-V Compounds For Solar Cell Applications” Appl. Phys. A69, 119-129 (1999).

In said (a)-(c), all the urea solar cells which comprise a laminated solar cell have pn junction in the planar semiconductor wafer or the semiconductor layer. The solar cell of (a) has a problem in that performance decreases due to optical loss of the filter mirror and costs are high, a space between a plurality of element solar cells is large, and their positioning and fixing are difficult.

In the solar cell of (b), the kind of semiconductor capable of crystal growth on one substrate is restricted by the difference in crystal structure and lattice constant, and it is difficult to form a pn junction of a preferred form having a different band gap. Moreover, although tunnel junctions are required to allow current to flow between the stacked solar cell layers, the resistance of the portion of the tunnel junctions is high. Moreover, since the magnitude | size of the photocurrent of the several laminated solar cell layer is uneven, there exists a problem that the output current of the whole solar cell is restrict | limited by the solar cell layer of the lowest.

The solar cell of (c) does not have the same crystal growth constraints as the solar cell of (b), but the urea solar cell on the solar light incident side requires a window through the light having a wavelength band not absorbed by the urea solar cell. Do. Increasing the number of stacked urea and light receiving areas of the urea solar cells has the drawback of increasing the area of the comb-shaped electrode portions and shifting positions of the urea solar cells to reduce the effective light receiving area. In addition, in the same manner as in the case of the solar cell of (b), in order to stack the urea solar cells composed of a single pn junction, the urea solar of which the output current of each urea solar cell is uneven and the output of the entire solar cell is low in output current. The problem is limited by the battery.

SUMMARY OF THE INVENTION An object of the present invention is to provide a stacked solar cell which can solve the above problems and remarkably improve the photoelectric conversion efficiency of solar light.

The laminated solar cell of the present invention is a laminated solar cell in which a plurality of solar cell modules are integrated and laminated integrally, wherein a plurality of solar cell modules having different sensitivity wavelength bands have a center wavelength in the sensitivity wavelength band. The shorter module has a plurality of types of solar cell modules stacked so as to be located on the incident side of the solar light, and at least one type of solar cell module includes a plurality of substantially spherical solar cells arranged in a plurality of rows and columns as a cell group module. It is characterized by. Since there are plural kinds of solar cell modules having different sensitivity wavelength bands, it is possible to generate power using sunlight in a wide wavelength range of the solar spectrum. As light having a shorter wavelength has a lower transmittance, as described above, a solar cell module having a shorter center wavelength in the sensitivity wavelength band can be stacked on the incident side of solar light, whereby the photoelectric conversion efficiency of each solar cell module can be increased.

In a cell group module having a plurality of substantially spherical solar cells, the output current can be easily changed by changing the number of series connections and the number of parallel connections in a circuit in which a plurality of cells are connected in parallel. Therefore, by changing the output currents of at least one cell group module, it is easy to align the output currents of plural kinds of solar cell modules, thereby easily increasing the photoelectric conversion efficiency of the solar cell.

Since the solar cell in the cell group module has a substantially spherical pn junction, it is possible to increase the total area of the pn junction in the cell group module and increase the photoelectric conversion efficiency by densifying the arrangement of the plurality of solar cells. It is possible. In addition, since each solar cell of the cell group module has a substantially spherical pn junction, the incident light incident on each solar cell has a chance of encountering the pn junction twice so that the photoelectric conversion efficiency can be easily increased. . In addition, since each solar cell can be configured to obtain an optical trapping action, the photoelectric conversion efficiency can be easily increased. Further, the light reflected from the spherical surface can be incident on another solar cell by changing the optical path, so that the absorbance of light is improved as a whole.

The solar cells of each cell group module can be produced independently without being affected by the lattice constant of the semiconductor constituting the pn junction of another solar cell module.

In addition to the above configuration, the following configuration may be appropriately employed.

1) At least one type of solar cell module is comprised with the planar light receiving module which has a common planar pn junction.

2) Four solar cell modules, three solar cell modules each comprising a cell group module having a plurality of substantially spherical solar cells arranged in a plurality of rows and a plurality of columns. Is composed of a planar light receiving module having a planar common pn junction.

3) Cells arranged in a plurality of rows and columns in the cell group module are electrically connected to each other through lead wires extending outwardly in a row direction or a column direction.

4) Each said cell group module is provided with the series-parallel connection circuit which connects a plurality of solar cells in series or parallel via the said several lead wire.

5) The series-parallel connection circuit of each cell group module is comprised so that a series connection circuit which connects a plurality of types of solar cell modules in series, and the output current of each cell group module may become substantially the same as the output current of the said planar light receiving module. do.

6) Each cell group module has two layers of a plurality of spherical solar cells arranged in a plurality of rows and columns on a plane, and the cells of these two layers do not overlap in a plane viewed from the direction of incidence of sunlight. Is arranged to access.

7) The planar light receiving module is disposed on the lowermost layer so as to be positioned below the plurality of cell group modules, and a reflecting member capable of reflecting sunlight is provided on the lower or lower side of the planar light receiving module.

8) In all solar cell modules other than the solar cell module which is the most incident side in the incident direction of solar light, the mirror reflects light on the surface of the solar cell module in the sensitivity wavelength band which is easily absorbed by the upper solar cell module. To form a film.

9) In the cell group module, a plurality of solar cells are housed in a transparent glass or synthetic resin material.

10) A transparent member made of transparent glass or synthetic resin is adhered to the upper surface of the solar cell module at the most incident side in the incident direction of sunlight.

11) The planar light receiving module is disposed at a lowermost layer below the plurality of cell group modules, and the three kinds of cell group modules have first to third cell group modules stacked in order from the incident side of sunlight.

The first cell group module has a plurality of cells in which a substantially spherical pn junction is formed in the surface layer of the substantially spherical GaP single crystal, and the second cell group module has a substantially spherical pn junction in the surface layer of the approximately spherical GaAs single crystal. The third cell group module has a plurality of cells in which substantially spherical pn junctions are formed in the surface layer portion of the substantially spherical Si single crystal.

12) The planar light receiving module in 11) has a common planar pn junction formed in an InGaAs semiconductor layer formed on an n-type InP semiconductor substrate.

13) The planar light receiving module is disposed on the uppermost layer above the plurality of cell group modules, and the three kinds of cell group modules have first to third cell group modules stacked in order from the incident side of sunlight.

The first cell group module has a plurality of photovoltaic photocells which have formed a substantially spherical pn junction on the surface layer of a substantially spherical GaAs single crystal, and the second cell group module has a substantially spherical pn on the surface layer of an approximately spherical Si single crystal. The third cell group module has a plurality of solar cells in which a spherical pn junction is formed in the surface layer portion of the substantially spherical Ge single crystal.

14) The planar light receiving module in 13) has a common planar pn junction formed in a GaAsP semiconductor layer formed on an n-type GaP semiconductor substrate.

15) It has two types of planar light receiving modules, and one or more cell group modules are built in between these two types of planar light receiving modules.

16) A plurality of kinds of solar cell modules are formed in a cylindrical shape, and the solar cell modules are stacked in a concentric shape.

1A to 1G are cross-sectional views of Si single crystals and the like in plural steps of manufacturing a spherical Si solar cell.

2 is a cross-sectional view of a spherical Ge solar cell.

3 is a cross-sectional view of a GaP single crystal or the like in a plurality of steps of manufacturing a GaP solar cell.

4 is a cross-sectional view of a GaAs single crystal or the like in a plurality of steps of manufacturing a GaAlAs / GaAs cell.

5 is a plan view of a Si cell group module.

6 is a cross-sectional view taken along the line VI-VI of FIG. 5.

FIG. 7 is a cross-sectional view taken along the line VII-VII of FIG. 5. FIG.

8 is a plan view of an InGaAs / InP planar light receiving module.

FIG. 9 is a sectional view taken along the line IX-IX of FIG. 8. FIG.

10 is a plan view of a GaAsP / GaP planar light receiving module.

FIG. 11 is a cross-sectional view taken along the line XI-XI of FIG. 10.

12 is a plan view of a stacked solar cell according to a first example.

FIG. 13 is a cross-sectional view of the stacked solar cell of FIG. 12.

It is a graph of the relative energy density of sunlight and the relative spectral sensitivity of the solar cell etc. which were built into the solar cell of a 1st example.

15 is an explanatory diagram illustrating incidence, reflection, absorption, and the like in the solar cell of the first example.

16 is a schematic circuit diagram of a series-parallel connection circuit and a series connection circuit in the solar cell of the first example.

17 is a cross-sectional view of the solar cell of the second example.

18 is a sectional view of a solar cell of a second example.

19 is a graph of relative energy density of sunlight and relative spectral sensitivity of solar cells and the like incorporated in the solar cell of the second example.

20 is a perspective view of a stacked solar cell according to another embodiment.

21 is a cross-sectional view of the solar cell of FIG. 20.

Four types of substantially spherical solar cells serving as urea cells constituting the stacked solar cell of the present invention, a cell group module incorporating a spherical solar cell, a planar light receiving module, and then a plurality of cell group modules and one Each solar cell constructed by incorporating a planar light receiving module will be described. After that, a cylindrical solar cell in which a plurality of cylindrical cell group modules are stacked concentrically will be described.

The spherical solar cell is the same as the inventor of the present application has already proposed in Japanese Patent No. 3326174. When fabricating the solar cell (spherical light receiving cell), a spherical semiconductor crystal is produced, a substantially spherical pn junction is formed in the surface layer portion of the semiconductor crystal, and the center of the semiconductor crystal is sandwiched to face the surface position. +-Electrodes are provided, and these +-electrodes are connected to both electrodes of the pn junction.

Since the solar cell has almost no directivity for directing the direction of incidence of sunlight, the solar cell exhibits excellent light-receiving ability even when the angle of incidence of solar direct light changes, and also shows excellent light-receiving ability with respect to surrounding reflected light. Incident light is easily trapped in the solar cell, and has a feature of being effectively photoelectrically converted by spherical pn junction.

In the case of producing the spherical solar cell, it is preferable to use a spherical semiconductor crystal similar to the size of the solar cell in order to reduce the loss of the semiconductor material. As a manufacturing method of the said spherical semiconductor crystal, the method which the inventors already proposed by Japanese Patent No. 321244 can be applied, for example. That is, droplets of the semiconductor in the molten state are dropped freely from the upper portion of the drop tube, and the spherical droplets are supercooled during dropping, and are stimulated from outside to solidify to form spherical or granular single crystals.

When employ | adopting the compound semiconductor containing an element with high vapor pressure, the method proposed by the inventor of this application in Japanese Patent No. 3287579 can be applied, for example. In this method, a raw material of a compound semiconductor and an element having high vapor pressure among the elements constituting the same are accommodated in an ampoule sealed with an atmosphere gas, dropping it from the upper portion of the drop tube, and the molten semiconductor raw material as in free fall as described above. By solidifying by the method, a single crystal of spherical shape or granularity is formed. However, a spherical single crystal can be formed by cutting a cube close to the volume of the solar cell from a large single crystal and processing the cube into a true spherical shape by mechanical / chemical means, without following the above-described method. Spherical or approximately spherical solar cells are made using these spherical single crystals, and a plurality of solar cells are used to produce solar cell modules (cell group modules) having a wavelength band of sensitivity specific to sunlight. The spectrum division type solar cell (laminated solar cell) of the present application is a composite of two or more types of solar cell modules having different sensitivity wavelength bands, and a planar pn junction light receiving module (planar light receiving module) is also combined if necessary. It can also be complex.

First, the structure and manufacturing method of plural kinds of solar cells (urea solar cells) incorporated in the stacked solar cell of the present invention will be described. Since the solar cell mentioned here can be manufactured by said well-known technique or other well-known technique, it demonstrates briefly. 1A to 1G show Si solar cells embedded in a solar cell module having a sensitivity wavelength band in the intermediate wavelength range (about 500 to 1100 nm) of the solar spectrum, and mainly comprising a substantially spherical silicon (Si) single crystal 11. The manufacturing process at the time of manufacturing the substantially spherical Si solar cell 10 manufactured by the following is shown. Si is an indirect transition type semiconductor having an energy band gap of 1.12 eV.

In the case of producing the granular p-type silicon single crystal 11 shown in Fig. 1A, a certain amount of Si droplets are freely dropped from the upper portion of the drop tube in which the inert gas is flown, spherical by surface tension during the drop, and supercooled during the drop. From the state, the magnetic pole is rapidly solidified by applying a physical stimulus such as contact to one point of the droplet, thereby obtaining a p-type silicon single crystal 11 having a diameter of about 1.2 mm.

 The protruding portion of the p-type silicon single crystal 11 is formed at the final stage of solidification. As shown in FIG. 1B, the projection is cut into a plane to form the reference plane 12. As shown in FIG. The reference surface 12 is a flat surface of about 0.3 mm in diameter. The reference plane 12 is used for positioning in processes such as impurity diffusion, electrode formation, output characteristic measurement, wiring, and the like in a subsequent step. Next, as shown in Fig. 1C, a silicon oxide film 13 is formed over the entire surface. Next, as shown in FIG. 1D, the silicon oxide film 13 is left as the diffusion mask in the vicinity of the reference plane 12 and its outer circumference, and the other silicon oxide film 13 is removed. Next, as shown in FIG. 1E, the silicon single crystal 11 of FIG. 1D is heated to diffuse phosphorus (P) or arsenic (As) as n-type impurities to form an n-type diffusion layer 14, thereby forming a p-type Si. An approximately spherical pn junction 15 is formed between the single crystal 11 and the n-type diffusion layer 14. A thin Si oxide film 16 is also formed at the time of diffusion of the n-type impurity. In the reference plane 12 and its vicinity, the surface of the p-type Si single crystal 11 remains uncovered by the diffusion layer 14. Next, as shown in Fig. 1F, the Si oxide films 13 and 16 are removed once to form an antireflection film 17 made of a thin Si oxide film on the entire surface. Next, as shown in FIG. 1G, silver is applied to the center of the surface exposed to the p-type Si single crystal 11 from the reference plane 12 and the center of the surface of the n-type diffusion layer 14, using the reference plane 12 as a display. When the paste containing is applied in a dot state and fired, silver penetrates through the thin Si oxide film 17 (antireflection film) to the surfaces of the p-type Si single crystal 11 and the n-type diffusion layer 14, respectively. One positive electrode 18 and one negative electrode 19 can be obtained. Since these electrodes 18 and 19 are located at positions opposite to the center of the Si single crystal 11, the symmetry of the distribution of the light input and the photovoltaic force is maintained, so that the bias of the current distribution is small, and the pn junction 15 is effectively Function.

FIG. 2 is a Ge solar cell embedded in a solar cell module having a long wavelength range (approximately 800 to 1600 nm) in the solar spectrum, and a Ge solar cell mainly manufactured from a substantially spherical germanium (Ge) single crystal. 20 is a cross-sectional view. Germanium is an indirect transition type semiconductor having an energy band gap of 0.66 eV, and the Ge solar cell 20 can be manufactured through the same process as the Si solar cell 10.

In Fig. 2, a p-type germanium single crystal 21 having a diameter of about 1.2 mm, a reference plane 22, an n-type diffusion layer 24 formed by thermal diffusion of n-type impurities (phosphorus or arsenic), pn junction 25, antireflection The film 26 is formed by tin containing a small amount of indium and + electrode 27 in ohmic contact with the p-type Ge single crystal 21, and formed by tin containing a small amount of antimony and added to the n-type diffusion layer 24. The negative electrode 28 in ohmic contact is shown.

3A to 3G show a GaP solar cell embedded in a solar cell module having a short wavelength band (about 300 to 600 nm) in the solar spectrum, and manufactured mainly using a spherical gallium phosphorus (GaP) single crystal. The manufacturing process at the time of manufacturing the spherical GaP solar cell 30 is shown. Gallium phosphorus (GaP) is an indirect transition type semiconductor having an energy bandgap of about 2.25 eV. The GaP solar cell 30 has a wavelength band of sensitivity in the short wavelength of the solar spectrum. In the case of manufacturing the solar cell 30, one side of the n-type GaP single crystal ingot is first cut out of a cube of about 1.6 mm, which is processed by mechanical / chemical polishing, and the diameter is about 1.2 mm as shown in FIG. 3A. To form a spherical n-type GaP single crystal (31). Next, as shown in FIG. 3B, the lower end portion of the spherical n-type GaP single crystal 31 is cut to form a reference plane 32. 3C, a silicon nitride film 33 (Si3N4) is formed over the entire surface of the GaP single crystal 31. Next, as shown in FIG. Next, as shown in FIG. 3D, the silicon nitride film 33 near the reference plane 32 and its outer circumference is left as a diffusion mask, and the other silicon nitride film 33 is removed.

Next, as shown in Fig. 3E, a substantially spherical surface that is a boundary between the diffusion layer 34 made of p-type GaP by diffusing p-type impurities such as zinc (Zn) and the diffusion layer 34 and the n-type GaP single crystal 31 is shown. A pn junction 35 of the type is formed. After forming the diffusion layer 34 and the pn junction 35, the silicon nitride film 33 used as the diffusion mask is completely removed. Next, as shown in Fig. 3F, an antireflection film 36 made of a thin silicon oxide film is formed over the entire surface. 3G, the center of the surface of the p-type diffusion layer 34 and the center of the surface of the p-type diffusion layer 34 facing the n-type GaP single crystal 31 from the reference plane 32 are shown in FIG. 3G. Are mainly coated with a paste containing zinc and germanium as impurities, and then heat-treated at a high temperature for a short time, the metal such as gold penetrates through the thin silicon oxide film, and the p-type GaP layer 34 and the n-type The + electrode 37 and the-electrode 38 in ohmic contact with the GaP single crystal 31 are formed, respectively.

4A to 4D illustrate GaAs cells embedded in a solar cell module having a sensitivity wavelength band of short wavelength region (about 500 to 850 nm) of the solar spectrum, and are manufactured mainly using a substantially spherical gallium arsenide (GaAs) single crystal. A manufacturing process for producing a substantially spherical GaAlAs / GaAs cell 40 is shown. Gallium arsenide (GaAs) is a direct transition semiconductor having an energy bandgap of 1.43 eV and has an energy bandgap between Si and GaP.

First, as shown in FIG. 4A, a substantially spherical n-type GaAs single crystal 41 having a diameter of about 1.2 mm is produced. The GaAs single crystal 41 may be formed in a spherical shape using a mechanical / chemical technique like the GaP single crystal 31. However, in order to obtain a good single crystal while reducing the loss of raw materials, it can be produced by the method proposed by Japanese inventor in Japanese Patent No. 3287579. This method is made by vacuum-sealing an n-type GaAs raw material and a small amount of As in a quartz ampoule, and cooling and solidifying the internal GaAs raw material while free-falling in a state of heating and melting from the outside. In the free fall state, the GaAs melt is spherical by surface tension and rapidly solidified by adding a physical stimulus (trigger) in the cooling state to produce a substantially spherical GaAs single crystal 41 shown in Fig. 4A. Next, as shown in FIG. 4B, a p-type Ga0.2 Al0.8 As layer 49 (ternary mixed crystal semiconductor) is grown on the surface of the n-type GaAs single crystal 41 by a liquid phase epitaxial method. In this case, the n-type GaAs single crystal 41 is immersed at a high temperature in a Ga melt collected by adding a small amount of GaAs source and impurity zinc to the Ga melt, held for a short time, cooled, and then cooled on a surface. .8 As layer 49 is epitaxially grown. During the Ga0.2 Al0.8 As crystal growth, zinc diffuses toward the n-type GaAs single crystal 41 to form a p-type GaAs layer 44, and a pn junction 45 on the surface of the GaAs layer 44. Is formed.

Next, as shown in Fig. 4C, after forming the anti-reflection film 46 made of a silicon oxide film on the surface, the projections on the surface of the n-type GaAs single crystal 41 are cut horizontally, and the reference plane having a diameter of about 0.3 mm. To form 42. Next, as shown in FIG. 4D, the center of the surface exposed to the p-type GaAlAs layer 49 using the reference plane 42 as a display, and the surface facing the n-type GaAs single crystal 41 from the reference plane 42 side. A paste containing zinc and germanium as impurities, respectively, is applied to the central portion of the film in a dot state, and heat-treated at a high temperature for a short time. By the heat treatment, a metal such as gold penetrates through the thin silicon oxide film 46 (antireflection film), and the + electrode 47 in ohmic contact with the p-type GaAlAs layer 49 and the n-type GaAs single crystal 41, respectively. An electrode 48 is formed.

When the GaAlAs / GaAs cell 40 is manufactured, a sensitivity wavelength band is formed by forming a pn junction 45 in the GaAlAs layer 49 or changing the energy band gap by changing the composition ratio of the GaAlAs layer 49. It can shift to the short wavelength side. In addition, a homo-junction pn junction may be formed by diffusing impurities into the spherical n-type GaAs single crystal 41 without providing the GaAlAs layer 49.

5 to 7 show Si cell group modules 70 (Si solar cell modules) in which a plurality of Si solar cells 10 are incorporated in a plurality of rows and columns. 5 to 7 conceptually show examples of modules incorporating 100 cells, but in actual Si cell group modules, hundreds or thousands of Si solar cells 10 are embedded.

A structure and a manufacturing method of the Si cell group module 70 will be described with reference to FIGS. 5 to 7. First, a Si solar cell array 71 in which ten solar cells 10 are connected in parallel at the same pitch between a pair of lead wires (silver plated in a copper wire having a diameter of about 0.1 mm) is produced.

 The positive electrode lead 73 is soldered to the positive electrode 18 of the solar cell 10, and the negative electrode lead 74 is soldered to the negative electrode 19 of the solar cell, and ten such cell arrays 71 are soldered. To make. Five arrays 71 are arranged in parallel at equal intervals in the upper layer, five arrays 71 are arranged in parallel at equal intervals in the lower layer, and the lower array 71 is disposed between the upper arrays 71. When placed in a plan view, the top and bottom solar cells 10 are arranged so that they do not overlap, and the whole is molded with a transparent synthetic resin 75a (for example, a flexible silicone resin). The top and bottom solar cells 10 do not overlap even from the side. 5 rows and 10 columns of solar cells 10 are planarly arranged in the upper layer, and 5 rows and 10 columns of cells 10 are planarly arranged in the lower layer. The actual Si cell group module 70 in which a plurality of cells 10 are built in a matrix form having a plurality of rows and a plurality of columns becomes a thin flexible panel state structure. However, the module may be configured with no flexibility.

The transparent glass sheet 76 (about 0.2 mm in thickness) is adhere | attached on the lower surface of said synthetic resin 75a. The transparent glass sheet 76 is used as a reference plane for bonding with other solar cell modules while maintaining the mechanical strength of the Si solar cell module 70. Both ends of the positive electrode lead 73 and the negative electrode lead 74 after the resin mold extend to the outside of the transparent synthetic resin 75a for electrical connection with other solar cell arrays and other solar cell modules. By using the ten + pole lead wires 73 and the ten -pole lead wires 74, a series-parallel connection circuit 75 (see FIG. 16) for serially connecting the 100 Si solar cells 10 is formed. The series and parallel connection circuit 75 will be described later based on FIG. 16.

In the same manner as manufacturing the Si cell group module 70, by incorporating the Ge solar cell 20 instead of the Si solar cell 10, a cell group module 80 (solar cell module) (see FIG. 17) can be manufactured. Can be. By incorporating the GaP solar cell 30 instead of the Si solar cell 10, the cell group module 90 (solar cell module) (see FIG. 13) can be manufactured. By incorporating the GaAlAs / GaAs solar cell 40 instead of the Si solar cell 10, the cell group module 100 (solar cell module) (see FIGS. 13 and 17) can be manufactured. The parallel and parallel connection circuits in these modules 80, 90 and 100 will also be described later in the same manner as in the parallel and parallel connection circuit 75 of the Si cell group module 70.

And the inventor of this application is already disclosed by the international publication WO2004 / 001858 etc. about the solar cell module which incorporated such a plurality of spherical solar cells.

8 and 9 are solar cell modules embedded in the stacked solar cell of the present application and have solar cell modules (element modules) having a sensitivity wavelength band in the spectrum of the long wavelength range (about 900 to 1700 nm) in sunlight. InGaAS / InP planar light receiving module 60 as an example.

 An n-type In 0.53 Ga 0.47 As layer 62 is epitaxially grown on the surface of the n-type InP substrate 61, and zinc as a p-type impurity is diffused from above the n-type layer to form a p-type In 0.53 Ga 0.47 As layer ( 64), and a planar common pn junction 65 is formed. In such a diffusion, Si3N4 may be used as the diffusion mask, and the p-type layer 64 may be formed by selectively diffusing the n-type In 0.53 Ga 0.47 As layer 62 in the periphery.

Although not shown, epitaxial growth of n-type InP having a larger energy band gap on the InGaAs layer 64 may be followed by diffusion of p-type impurities from the surface to form a pn junction in the InGaAs layer 64. . By forming the InP layer as the window layer, the recombination rate at the surface can be reduced to improve the photoelectric conversion efficiency. In addition, the composition ratio of said In and Ga can be changed only as an illustration.

Next, a cold mirror film 66 is formed on the surface of the p-type InGaAs layer 64 serving as the light receiving surface as shown in FIG. 8. The cold mirror film 66 is composed of a dielectric multilayer film set to reflect light having a wavelength of about 1100 nm or less and transmit more light. A dielectric multilayer film is formed by alternately stacking a film of high refractive index dielectric (TiO2, Ta2O5, etc.) and a film of low refractive index dielectric (SiO2), and each thickness and film number are set in consideration of reflecting wavelength and reflectance.

The negative electrode 68 (gold containing a small amount of germanium and nickel) is placed in ohmic contact on the entire surface of the bottom surface of the n-type InP substrate 61, and a light receiving area is formed on the surface of the p-type InGaAs layer 64. In order to secure a lot, a stripe + electrode 67 (gold containing a small amount of zinc) is provided in ohmic contact. The planar light-receiving module 60 can be manufactured according to a known technique for manufacturing a long wavelength photodiode by InGaAS / InP. Next, the + pole lead 67a and the -pole lead 68a made of a lead wire (0.1 mm in diameter) silver plated on the copper wire are soldered and connected to the + electrode 67 and the-electrode 68, respectively.

10 and 11 are solar cell modules embedded in the stacked solar cell of the present application, and GaAsP / which is an example of a solar cell module (element module) having a sensitivity wavelength band in the short wavelength region (about 300 to 600 nm) of the solar spectrum. A plan view and a sectional view of the GaP planar light receiving module 50.

On the n-type GaP substrate 51, n-type GaAs 0.1 P 0.9 layer 52 is formed using a known vapor phase epitaxial growth method. In this composition, GaAsP is an indirect transition semiconductor with an energy bandgap of about 2.21 eV. Next, zinc, which is a p-type impurity, is diffused from above the GaAsP layer 52 to form a p-type GaAs 0.1 P 0.9 layer 54, and a pn junction 55 is formed in the GaAsP layer 54. Although not shown, a diffusion mask Si3N4 film is provided around the surface of the n-type GaAsP layer 52 to perform zinc diffusion to form a planar pn junction. This method is also used for the manufacturing method of a well-known yellow light emitting diode (LED).

+ electrode 57 (gold containing a small amount of zinc) and-electrode 58 (containing a small amount of germanium and nickel) in ohmic contact with the surface of p-type GaAsP layer 54 and n-type GaP substrate 51, respectively Install gold). In order to secure a large light receiving area of the planar light receiving module 50, the + electrode 57 and the-electrode 58 are formed in a thin stripe shape as shown in the figure to align both positions. A transparent antireflection film 56 is provided on the surface of the light receiving window surrounded by the stripe electrode 57. The p-type GaAsP layer 54 serves as a light receiving surface of the GaAsP / GaP flat light receiving module 50, and in the case of the solar cell 300 (see FIG. 17) described later, a GaAsP / GaP flat light receiving module ( The light having a long wavelength transmitted through 50 is incident on the three-layer solar cell module disposed below the module 50. Next, using the lead wire (diameter 0.1 mm) silver-plated with copper wire, the + pole lead wire 57a and the-pole lead wire 58a are soldered and electrically connected to both ends of the + electrode 57 and the-electrode 58, respectively. Then, these lead wires 57a and 58a are led out of the planar light receiving module 50.

Next, the stacked solar cell 200 of the first example will be described.

12 and 13 show four types of four aspects of the GaP cell group module 90, the GaAlAs / GaAs cell group module 100, the Si cell group module 70, and the InGaAs / InP planar light receiving module 60. It is a top view and sectional drawing of the laminated solar cell 200 comprised with the battery module.

In the stacked solar cell 200, the solar cell modules 90, 100, 70, and 60 having different sensitivity wavelength bands with respect to the solar spectrum are included. Laminated to be located at. As can be seen from FIG. 14, the center wavelength in the sensitivity wavelength band of the solar cell modules 90, 100, 70, and 60 is the center wavelength of the module 90 (about 450 nm) <the center of the module 100. Wavelength (about 700 nm) <center wavelength of module 70 (about 800 nm) <center wavelength of module 60 (about 1300 nm). Therefore, the InGaAs / InP planar light receiving module 60, the Si cell group module 70, and the GaAlAs / GaAs cell group module are disposed on the lowermost layer, and the aluminum nitride substrate 201 is disposed thereon and embedded in the transparent synthetic resin 202 thereon. (100), the GaP cell group module 90 is laminated in the order of bonding and bonded by transparent bonding, and the transparent glass cover 203 is superposed on the top layer which forms the light receiving surface which receives sunlight, and is bonded by the transparent adhesive agent.

+/- pole leads 67a, 68a of module 60, +/- pole leads 73, 74 of module 70, +/- pole leads 103, 104 of module 100, module ( The +/- pole leads 93, 94 of 90 extend to the outside of the modules, respectively, so that the parallel and parallel connection circuits 75, 105, 95 of the respective modules 70, 100, 90 (see Fig. 16). Consists of.

FIG. 14 shows the spectral sensitivity characteristics (solid line) of the solar spectrum and the stacked solar cell 200 obtained by the solar spectrum analyzer and the spectral sensitivity characteristics of the solar cells 30, 40, and 10 alone. Is a diagram conceptually illustrating.

In FIG. 14, a gap portion (an oblique portion in the drawing) of the solar spectrum and the spectral sensitivity characteristic of the stacked solar cell 200 is an energy-free portion that cannot be photoelectrically converted in the solar cell 200, and the solar cell 200 The long-spectrum spectral portion exceeding the sensitivity wavelength range of the spectral sensitivity characteristic is) an energy-free portion that passes through the solar cell 200. Since these are all loss energy that cannot be photoelectrically converted, it is desirable to minimize them.

Each module 90, 100, 70, 60 alone, not only has a narrow sensitivity wavelength band, but also an energy whose light is received and the energy of light is too large than the band gap cannot be effectively used as an output. FIG. 14 shows that the available wavelength range (the white background portion in the drawing) can be widened to obtain high photoelectric conversion efficiency by stacking and combining solar cell modules having different energy band gaps (which correspond to sensitivity wavelength bands). .

FIG. 15 is an explanatory diagram illustrating the following three methods for the optical path of incident light, the optical path of reflected light, and the aspects of reflection and absorption in the stacked solar cell 200. 15, the effect of the solar cell 200 in which the spherical or substantially spherical solar cells 30, 40, and 10 were incorporated can be seen.

Case 1: When sunlight incident on the transparent cover glass 203 runs perpendicular to each of the solar cells 30, 40, 10 and the module 60 on the optical path.

Except for the light reflecting each interface with different refractive indices and the light absorbed by materials other than each solar cell, the direct sunlight is absorbed basically according to the characteristics of the solar cell reflecting the energy bandgap, Contribute. In the solar cell 200, since the solar cells 30, 40, 10 and the module 60 are arranged in the order of the high energy band gap from the incident side of the solar light, the solar cells 200 are arranged in the order of the long light from the short light of the wavelength. Absorbed by cells 30, 40, 10 and module 60. The light that has not been absorbed in the upper cell on the incident side is incident on the solar cell of the next stage below, and the light not absorbed there is incident on the solar cell of the next stage below, and the last module 60 Light that is not absorbed at is a transmission loss.

Thus, since the upper solar cell functions as a filter with respect to the lower solar cell and the module 60, the ratio which receives excessive light energy and converts into thermal energy is reduced. The cold mirror 66 formed on the upper surface of the InGaAS / InP planar light receiving module 60 having the longest sensitivity wavelength band has a shorter wavelength range than the light having the longest wavelength that can photoelectrically change in the Si solar cell 10. It functions as a filter which reflects light and transmits light of a longer wavelength range. In this way, the InGaAS / InP planar light receiving module 60 is prevented from absorbing excessively large light energy, the temperature rise of the planar light receiving module 60 is suppressed, and the durability thereof is improved. Similarly, since the upper solar cell absorbs light having excessive energy with respect to the lower solar cell and performs photoelectric conversion, the temperature rise of the solar cells 100 and 70 is also suppressed.

In a substantially spherical solar cell, when light transmits through the solar cell, the absorption of light occurs from the point of incidence from the point of incidence depending on the amount of light energy, but the same pn junction exists on the opposite side to the center of the solar cell. The light having a long wavelength within the sensitivity wavelength band is absorbed and the sensitivity wavelength band is widened.

Case 2: When incident light is reflected off the surface of the solar cell.

As shown in FIG. 15, light reflected from the surface of the spherical solar cells 30, 40, 10 enters another solar cell, and absorption or transmission occurs depending on its optical characteristics. The reflection of light is generated not only by the solar cell but also by the +/- pole lead wires and the transparent glass sheets 96, 106 and 76 of the solar cell. The reflected light repeats reflection inside the modules 90, 100, 70, and 60, and the light is diffused throughout. Therefore, light also enters the lower side (opposite side to the light receiving side) of the solar cell to which direct sunlight does not reach, and the effect of increasing the output of the entire solar cell can be obtained. This effect can be further increased by the method of arrangement | positioning of fillers, such as a lower solar cell, transparent glass, TiO2, and the like which passed between upper solar cells.

Case 3: Sunlight incident on the surface at an oblique angle is captured and trapped inside the cell. Since the refractive indices of the solar cells 30, 40, and 10 are large, depending on the angle of the incident sunlight, light trapping action due to total reflection occurs in the solar cell, and a component that is photoelectrically converted by pn junction in the solar cell occurs. In addition, the effect of increasing the output can be expected.

Case 4: Light is trapped between the transparent cover glass 203 and the cold mirror 66 of the module 60, so that the absorbance of light and the efficiency of photoelectric conversion are improved.

FIG. 16 shows a series connection circuit in which modules 90, 100, 70, and 60 are connected in series in the stacked solar cell 200 in which the modules 90, 100, 70, and 60 having the same light receiving portion surface area are stacked. 205 and an optimum series-parallel connection circuit 95 and 105 in which a plurality of solar cells 30, 40, and 10 are connected in series and parallel in each module 90, 100, and 70 so as to maximize the output of the solar cell 200. , 75) is shown. Basically, the serial and parallel connection circuits 95, 105 and 75 are configured such that the output currents of the modules 90, 100 and 70 are equal to the output currents of the module 60 with the smallest output current, respectively, The serial and parallel connection circuits 95, 105 and 75 are constructed by utilizing the +/- pole leads 93, 95, 103, 104, 73, 74, 67a and 68a.

When the maximum output current of the InGaAs / InP planar light receiving module 60 is I, the maximum output current when the solar cells 30 of all the GaP cell group modules 90 are connected in parallel is 2I and the GaAlAs / GaAs cell group The maximum output current when the solar cells 40 of all the modules 100 are connected in parallel is 3I, and the maximum output current when the solar cells 10 of all the Si cell group modules 70 are connected in parallel is 4I. The case is assumed to be an example.

As shown in FIG. 16, in the module 90, when the series connection number of the series-parallel connection circuit 95 is set to 2, the output current becomes I. In the module 100, the output current becomes I when the number of series connections of the series-parallel connection circuit 105 is set to three. In the module 70, the output current becomes I when the number of series connections of the series-parallel connection circuit 75 is set to four. In this way, the output currents of the modules 90, 100, and 70 become I, respectively, and are equal to the output current I of the module 60. In this way, when the output currents of the modules 90, 100, 70, and 60 are configured to be the same, the modules 90, 100, and 70 exhibit the maximum power generation capability.

More specifically, the maximum output current of one solar cell 30, 40, 10 is i30, i40, i10, respectively, and the number of parallel connections of the plurality of solar cells 30, 40, 10 is N30, respectively. N40 and N10, and the output current of the module 60 is referred to as I.

If the number of parallel connections is set such that the equations i30 × N30 = i40 × N40 = i10 × N10 = I are approximately satisfied, the output currents of the modules 90, 100, 70, and 60 are approximately equal.

The maximum output voltage of one of the cells 30, 40, and 10 is called v30, v40, and v10, respectively, and the number of series connections of the plurality of cells 30, 40, and 10 is called M30, M40, and M10, respectively. If the output voltage of the module 60 is v60, the output voltage V of the stacked solar cell 200 is V = (v30 x M30) + (v40 x M40) + (v10 x M10) + v60.

In this way, the output of the entire stacked solar cell 200 is adjusted by adjusting the parallel number and the series number for serially connecting the solar cells in the plurality of modules 90, 100, 70, and 60 constituting the stacked solar cell 200. Power) can be maximized.

Such serial and parallel connection circuits 95, 105, and 75 can be configured through +/- pole leads, which are terminals of a solar cell array, but are electronic switches so that the output is maximized in response to changes in the solar spectrum or incident light. The circuit may be configured to switch the serial and parallel connection circuits 95, 105, and 75, and to change the number of series connections and the number of parallel connections. In each module 90, 100, 70, since a solar cell array formed by connecting a plurality of cells in parallel is connected in series through a lead wire, even if there is a nonuniformity in characteristics of the plurality of cells, a current sharing is performed according to the nonuniformity. The output of the module is minimal. In the conventional stacked solar cell, since only the planar light receiving module is used, it is difficult to match the output current by the parallel-parallel connection as in the stacked solar cell 200 of the present application.

In the above-described stacked solar cell 200, the cell group modules 90, 100, and 70 are stacked in order from above, and the planar light receiving module 60 is disposed on the lowermost layer, and the shorter the center wavelength in the sensitivity wavelength band is. Since it is disposed so as to be located on the incident side of the sunlight, light having low transmittance of short wavelength can be absorbed in the upper layer and light having high transmittance of long wavelength can be absorbed in the lower layer, thereby improving the photoelectric conversion efficiency of the solar cell 200. have.

Since the cell group modules 90, 100, and 70 are built in the upper three layers and the flat light receiving module 60 is built in the lowermost layer, the reflected light reflected by the flat light receiving module 60 can be easily photoelectrically converted in the upper module. You can. In particular, in the module 60, since the cold mirrors 66 reflecting light having a wavelength of 1100 nm or less, which are easy to photoelectric conversion in the modules 90, 100, and 70, are provided, the reflected light can be utilized to easily increase the photoelectric conversion efficiency. Can be. Each cell group module 90, 100, 70 functions as a filter to the modules 100, 70, and 60 below, so that the module below is not easily overheated and can easily increase the photoelectric conversion efficiency. Can be. As shown in FIG. 14, since the sensitivity wavelength bands of the modules 90, 100, 70, and 60 are appropriately set, light of a wide range of the solar spectrum can be provided to the photoelectric conversion, and the solar cell 200 is provided. The photoelectric conversion efficiency of may be increased to 50% or more.

In addition, as shown in FIG. 16, since the parallel and parallel connection circuits 95, 105, and 75 are provided so that the output current of each of the modules 90, 100, and 70 is equal to the output current of the module 60, By fully exhibiting the power generation function of the solar cell 200, the photoelectric conversion efficiency can be improved.

In addition, since the anti-reflective films 36, 46, and 17 are formed in the solar cells 30, 40, and 10 respectively embedded in the modules 90, 100, and 70, the cell itself reflects and diffuses the incident light in the oblique direction. The effect of absorbing light is increased, and the effect of confinement of light inside the solar cell 200 is also increased, which effectively acts to improve photoelectric conversion efficiency.

In the modules 90, 100, and 70, the cells 30, 40, and 10 are arranged in two layers, and the cells 30, 40, and 10 are densely arranged in a plan view and a side view. , the total area of the pn junctions is increased, and the photoelectric conversion efficiency is improved.

In addition, in each of the cells 30, 40, and 10, the direction connecting the +/- electrodes is made to be in the horizontal direction, so that the light incident from above is at least at the pn junction when the light is incident on each of the cells. Since there is an opportunity to encounter twice, the photoelectric conversion efficiency is improved. The photoelectric conversion efficiency is also improved by the reflected light incident from the downward side into the solar cell.

In addition, since the solar cells 30, 40, and 10 embedded in each module 90, 100, and 70 can be manufactured independently without being affected by the lattice constants of semiconductors of other solar cell modules, I can make production freely.

Next, the stacked solar cell 300 of the second example will be described. However, although the kind of the module employ | adopted for this solar cell 300 differs in part from the module of the solar cell 200, since it is the same structure as the solar cell 200, it demonstrates easily.

17 and 18 show four types of four aspects of the GaAsP / GaP planar light receiving module 50, the GaAlAs / GaAs cell group module 100, the Si cell group module 70, and the Ge cell group module 80. It is sectional drawing of the laminated solar cell 300 comprised with the battery module.

In the solar cell 300, the solar cell modules 50, 100, 70, and 80 having different sensitivity wavelength bands with respect to the solar spectrum are located on the incident side of sunlight as the module having a shorter center wavelength in the sensitivity wavelength band. It is laminated so that. As can be seen from FIG. 19, the center wavelength in the sensitivity wavelength band of the solar cell modules 50, 100, 70, and 80 is the center wavelength of the module 50 (about 450 nm) <the center of the module 100. Wavelength (about 700 nm) <center wavelength of module 70 (about 800 nm) <center wavelength of module 80 (about 1200 nm). Therefore, the aluminum nitride substrate 301 is disposed on the lowermost layer, and the Ge cell group module 80, the Si cell group module 70, the GaAlAs / GaAs cell group module 100, and the GaAsP / GaP planar light receiving module 50 are disposed thereon. The transparent glass cover 304 is superposed on the uppermost layer forming the light receiving surface for receiving sunlight, and laminated with a transparent adhesive, and then bonded with a transparent adhesive.

+/- pole leads 83, 84 of module 80, +/- pole leads 73, 74 of module 70, +/- pole leads 103, 104 of module 100, module ( The +/- pole leads 57a and 58a of 50 extend to the outside of each module, respectively, and comprise the series-parallel circuit (not shown) of each module.

In the solar cell 300, the GaAsP / GaP planar light receiving module 50 at the most incident side photoelectrically converts light of a short wavelength region, and the light transmitted through the module 50 is transferred to the module 100 below. Photoelectric conversion in the GaAlAs / GaAs solar cell 40, and the light transmitted through the module 100 is photoelectrically converted in the Si solar cell 10 of the module 70 below it, and transmitted through the module 70 Long wavelength light is photoelectrically converted in the Ge solar cell 20.

Under the Ge solar cell 20, an aluminum nitride substrate 301 coated with an aluminum reflective film 302 is fixed by a transparent adhesive agent. The aluminum reflective film 302 serves to reduce the unused portion of sunlight by reflecting back the light that has passed between the upper cells and the light reflected from the inside of the module.

Between the solar cells 40, 10, and 20 of each module 100, 70, and 80, reflection and scattering of light occur as described with reference to FIG. 15, and are incident on the lower side of the solar cell and are provided for photoelectric conversion. As described with reference to FIG. 16, in order to equalize the output current of the modules 100, 70, 80 with the output current of the module 50, respectively, according to the output characteristics of the respective cells 40, 10, 20. In the parallel series connection circuits of the respective modules 100, 70, and 80, the optimum number of serial connections and the number of parallel connections are set.

Also in the laminated solar cell 300 described above, the same operation and effect as the solar cell 200 can be basically obtained, but the difference from the solar cell 200 will be briefly described. As a semiconductor having difficulty in constituting a spherical solar cell, the laminated solar cell 300 is constructed by effectively utilizing a planar light receiving module 50 mainly composed of a GaAsP compound semiconductor having a sensitivity wavelength band in the short wavelength region of the solar spectrum. can do. In addition, the anti-reflection film 56 formed on the top planar light receiving module 50 can enhance the confinement of light into the solar cell 300.

In the embodiments described above, the planar light receiving modules 60 and 50 are used for the high energy band on the short wavelength side or the low energy band on the long wavelength side of the solar spectrum. In a solar cell module using a compound semiconductor that realizes high photoelectric conversion in such a wavelength range, it is not necessary to employ a spherical solar cell, and adopting a planar light receiving module that is easy in manufacturing, advantageously in terms of cost-effectiveness do.

Next, a stacked solar cell according to another embodiment will be described.

As shown in FIG. 20 and FIG. 21, the stacked solar cell 400 is laminated by stacking two cylindrical cylindrical solar cell modules 410 and 420 in a concentric manner, and is made of thin transparent glass or synthetic resin on the outermost layer. The transparent cylindrical body 401 is covered, and the innermost layer also has a structure in which a thin transparent glass or a transparent cylindrical body 402 made of synthetic resin is mounted.

A fluid passage 403 is formed at the center of the solar cell 400, and receives heat from the solar cell 400 in a liquid or gas circulating in the fluid passage 403 to cool the solar cell 400. It is.

The inner solar cell module 410 is a Ge cell group module in which a plurality of Ge solar cells 20 are arranged in a plurality of rows and arranged in a cylindrical shape. This is the same as the Ge cell group module 80 having a cylindrical shape. The outer solar cell module 420 is a GaAlAs / GaAs cell group module in which a plurality of GaAlAs / GaAs cells 40 are arranged in a plurality of rows and arranged in a cylindrical shape. This is similar to the one in which the GaAlAs / GaAs cell group module 100 is configured in a cylindrical shape.

In each module 410, 420, the +/- pole leads 404, 405 of each solar cell array protrude outward from both ends of the modules 410, 420, but each cell array is a solar cell. It is preferable to arrange | position so that the line which connects +/- electrodes of the cells 20 and 80 may become a direction orthogonal to the incident direction of sunlight.

In each of the solar cell modules 410 and 420, the plurality of solar cells 20 and 80 are connected in series and in parallel through the +/- pole leads 404 and 405, and the solar cell modules 410 and 420 A series-parallel connection circuit is comprised so that output current may become the same, and the solar cell modules 410 and 420 are connected in series.

Since sunlight is incident from the outside, the Ge cell group module 410 with the longer center wavelength in the sensitivity wavelength band is disposed inside, and the GaAlAs / GaAs cell group module 420 with the shorter center wavelength in the sensitivity wavelength band. It is arrange | positioned outside.

The stacked solar cell 400 is a solar cell having a two-layer structure in which the solar cell modules 410 and 420 are stacked, but the sunlight incident from the upper side is incident on the solar cell having a four-layer structure. Since both sides of the battery 400 are incident on four or more layers of solar cells, the photovoltaic conversion efficiency increases because sunlight has many opportunities to encounter the solar cell.

In addition, in the stacked solar cell 400, since the outer shape is cylindrical, there is no directivity to the incident direction of sunlight, and it is easy to absorb sunlight incident from various directions. Moreover, since it can cool by the fluid circulated inside, photoelectric conversion efficiency becomes high, deterioration by heat is suppressed, and durability is also improved.

In this embodiment, an example of a solar cell having a two-layer structure has been described, but a three-layer structure, a four-layer structure, and a five-layer structure in which three or more cylindrical solar cell modules are stacked in a concentric manner Solar cells can also be realized.

Next, a change form in which the above embodiment is partially changed will be described.

1] Two kinds, three kinds, or five kinds or more may be used for the type of solar cell module incorporated in the stacked solar cell, but at least one type of solar cell module is composed of a cell group module having a plurality of solar cells. At least one solar cell module is preferably constituted by a planar light receiving module. The shorter the center wavelength of the sensitivity wavelength band is, the more the module is arranged to be the incident side of sunlight.

For example, one type of planar light receiving module and one type of cell group module are provided, the planar light receiving module is disposed above the incident side, and the cell group module is disposed below. On the contrary, the cell group module is arranged in the upper layer on the incident side, and the planar light receiving module is arranged in the lower layer.

For example, one type of planar light receiving module and two types of cell group modules are provided, one planar light receiving module is disposed in the upper layer on the incident side, one cell group module is arranged in the middle layer, and one cell is used. Place the group module downstairs. On the contrary, one cell group module is arranged in the upper layer on the incident side, one cell group module is arranged in the middle monolayer, and one planar light receiving module is arranged in the lower layer.

For example, two kinds of planar light receiving modules and two kinds of cell group modules are provided, two cell group modules are arranged in the middle monolayer, and planar light receiving modules are arranged in the upper and lower layers, respectively, as if they are sandwiched from the top and the bottom.

2] The planar light-receiving module (solar cell module) disposed on the uppermost layer is constructed using a semiconductor that absorbs and generates ultraviolet rays such as gallium nitride (GaN) single crystal and silicon carbide (SiC) single crystal. In such a case, since high ultraviolet light having high light energy can be effectively utilized to generate power, not only can the photoelectric conversion efficiency of the stacked solar cell be improved, but the solar cell module below can effectively suppress deterioration due to ultraviolet light.

3] amorphous semiconductors such as silicon capable of photoelectric conversion other than the above semiconductors, III-V compound semiconductors (eg InGaN, InGaP, etc.), II-VI compound semiconductors (eg, ZnO, Cd-Te and the like) and a chalcogenite compound semiconductor (for example, CuInGaSe2) containing a group VI element (S, Se, Te, etc.) may be produced as a material.

4] A plurality of solar cell modules included in the stacked solar cell are all composed of cell group modules. In this case, it is preferable to provide a reflecting film or a reflecting member having a function of reflecting light on the lower or lower surface of the lowermost solar cell module.

5] A flexible laminated solar cell is formed by applying a flexible transparent sheet instead of a hard material such as the transparent glass cover 76 or the aluminum nitride substrates 201 and 301.

6] Instead of the transparent synthetic resin 75a of the module 70, 80, 90, 100, transparent insulating glass may be employed.

7] Scattering materials (fillers), such as glass and TiO2, which are transparent and have a larger refractive index, are mixed in the light transmitting portions inside the modules 70, 80, 90, and 100, and the optical performance of the light transmitting portions is increased.

The stacked solar cell according to the present invention solves the problems of performance reduction and high cost due to the optical loss of the conventional mirror, and remarkably improves the photoelectric conversion efficiency.

Claims (17)

In a stacked solar cell in which a plurality of solar cell modules are built and stacked integrally, A plurality of types of solar cell modules having different sensitivity wavelength bands, the shorter the center wavelength in the sensitivity wavelength band has a plurality of types of solar cell modules stacked so as to be located on the incident side of the sunlight, At least one type of solar cell module is a stacked solar cell comprising a cell group module having a plurality of substantially spherical solar cells arranged in a plurality of rows and a plurality of columns. The method of claim 1, At least one type of solar cell module is a laminated solar cell comprising a planar light receiving module having a common pn junction that is planar. The method of claim 1, With four kinds of solar module The three types of solar cell modules are composed of cell group modules having a plurality of substantially spherical solar cells, each arranged in a plurality of rows and columns. One type of solar cell module is a laminated solar cell comprising a planar light receiving module having a common pn junction that is planar. The method according to any one of claims 1 to 3, The solar cells arranged in a plurality of rows in a plurality of columns in the cell group module are electrically connected through a plurality of lead wires extending in the row direction or the column direction to the outside. The method of claim 4, wherein Each cell group module includes a series-parallel connection circuit for connecting a plurality of solar cells in series and parallel through the plurality of lead wires. The method of claim 5, Having a series connection circuit for connecting a plurality of types of solar cell modules in series, And a series-parallel connection circuit of each cell group module is configured such that the output current of each cell group module is approximately equal to the output current of the planar light receiving module. The method of claim 6, Each said cell group module has two layers of a plurality of spherical solar cells arranged in a plurality of rows in a plurality of rows on a plane, and the cells of these two layers are arranged to be accessible without overlap in a plan view. A laminated solar cell characterized by the above-mentioned. The method of claim 4, wherein The planar light receiving module is disposed on the lowermost layer so as to be positioned below the plurality of cell group modules, and a reflecting member capable of reflecting sunlight on the lower or lower side of the planar light receiving module is installed. The method of claim 7, wherein In all solar cell modules other than the solar cell module closest to the incidence side in the incident direction of solar light, the surface of all the solar cell modules reflects light of a sensitivity wavelength band that is more easily absorbed by the solar cell module above. A laminated solar cell, wherein a mirror film is formed. The method of claim 7, wherein In the cell group module, a plurality of solar cells are housed in a state of being embedded in a transparent glass or synthetic resin material. The method of claim 7, wherein A laminated solar cell, wherein a transparent member made of transparent glass or synthetic resin is fixed to an upper surface of a solar cell module closest to an incident side in the incident direction of sunlight. The method of claim 3, The planar light receiving module is disposed in the lowermost layer below the plurality of cell group modules, and the three kinds of cell group modules have first to third cell group modules stacked in order from the incident side of sunlight. The first cell group module has a plurality of solar cells in which an approximately spherical pn junction is formed in the surface layer portion of the approximately spherical GaP single crystal, and the second cell group module is substantially spherical in the surface layer portion of the approximately spherical GaAs single crystal. A plurality of solar cells having a plurality of pn junctions, wherein the third cell group module has a plurality of cells in which a substantially spherical pn junction is formed in the surface layer portion of a substantially spherical Si single crystal. The method of claim 12, The planar light receiving module has a planar common pn junction formed in an InGaAs semiconductor layer formed on an n-type InP semiconductor substrate. The method of claim 3, The planar light receiving module is disposed on the uppermost layer above the plurality of cell group modules, and the three kinds of cell group modules have first to third cell group modules stacked in order from the incident side of sunlight. The first cell group module has a plurality of photovoltaic photovoltaic cells in which a substantially spherical pn junction is formed in a surface layer of a substantially spherical GaAs single crystal, and the second cell group module is approximately spherical in a surface layer portion of an approximately spherical Si single crystal. A plurality of solar cells having a pn junction of a type, and the third cell group module has a plurality of solar cells having a substantially spherical pn junction formed at a surface layer of a substantially spherical Ge single crystal. Solar cells. The method of claim 14, The planar light receiving module has a planar common pn junction formed in a GaAsP semiconductor layer formed on an n-type GaP semiconductor substrate. The method of claim 2, A stacked solar cell comprising two types of planar light receiving modules, and one or a plurality of cell group modules are incorporated between these two types of planar light receiving modules. The method of claim 1, A plurality of kinds of solar cell module is formed in a cylindrical shape, A laminated solar cell, wherein these solar cell modules are stacked in a concentric shape.

Images