KR20060087313A - Nanocomposite material and formation of the same - Google Patents

Abstract

The present invention discloses a nanocomposite material comprising an inorganic matrix material, core quantum dots periodically arranged in the matrix.

Nanocomposite material according to the present invention has the form of a continuous phase and a core particle using inorganic nanoparticles, it is possible to control the size of the core / shell nanoparticles and regular arrangement of the quantum dots in the continuous phase to control the optical and electrical properties and thermoelectric It shows excellent performance as a material and can be used for various magneto-optical, thermoelectric and electro-magnetic devices.

Description

Nanocomposite material and formation of the same

1 is a schematic diagram illustrating one embodiment of a method of making a nanocomposite material using core / shell quantum dots.

2 is a TEM image of PbSe / PbTe core / shell quantum dots.

3 is an HRTEM (High Resolution TEM) photograph of PbSe / PbTe core / shell quantum dots.

The present invention relates to an inorganic nanocomposite material using a quantum dot, and more particularly to a nanocomposite material including a core quantum dot periodically or two-dimensionally arranged in an inorganic matrix material and a method for manufacturing the same. .

Quantum dots are nanocrystals of metals or semiconductors that are smaller than the Bohr exciton radius, that is, a few nanometers in size, and have a large number of electrons in the quantum dots but the number of free electrons is limited to 1 to 100. .

In this case, the energy levels of the electrons are discontinuously limited, and thus exhibit electrical and optical characteristics different from those of a bulk metal or semiconductor, which forms a continuous band.

Conventionally, in order to obtain a semiconductor having a constant band gap, various conductors and non-conductors had to be mixed, but since the energy level varies depending on the size, the band gap can be adjusted by simply changing the size.

In addition, unlike bulk semiconductors, the energy required to add electrons is not uniform and is gradually changed from one to the other, so that a so-called coulomb blockade effect occurs when an existing electron prevents the addition of new electrons.

Therefore, the new properties of these quantum dots enable the implementation of magneto-optic, thermoelectric, and magnetoelectric functions. More specifically, information storage media, single-electron devices, light-emitting devices (LEDs), and living bodies It can be used in various fields such as molecular labeling and solar cells.

However, in order to actually use quantum dots, it is common to use them dispersed in a medium or a matrix. For example, the quantum dots may be dispersed in a transparent polymer or the like to be used for photoluminescence or the like, or the quantum dots may be formed on a substrate and stacked on the semiconductor to be used as a light emitting device (LED) or a thermoelectric device.

In order to effectively use quantum dots in the various applications, it is necessary to be able to control the position of the quantum dots in the matrix. That is, it is easy to control the optical and magnetic effects due to quantum dots to be distributed while maintaining a constant interval by adjusting the interval between the quantum dots or the size of the quantum dots, etc. can be practically used in various devices.

In the conventional technique of dispersing core particles in a matrix,

In US Patent No. 6,214,500, polydisperse core / shell polymer resin particles having a size of 100 nm to 3 μm are first prepared, regularly arranged and cured to disperse the core particles in the shell matrix. A polymer latex composition is disclosed. The latex composition is intended for use as a storage medium by including a photosensitive material in the core.

US Patent No. 6,710,336 discloses a nanocomposite optical device in which quantum dots are dispersed in a transparent polymer resin. In the composite material, quantum dots are simply dispersed in a matrix and used as they are.

Korean Patent Publication No. 2004-0078152 discloses a molding comprising a contrast material in a transparent matrix. It is a kind of artificial light emitter that mimics the structure of the opal in which the nanoparticles are arranged regularly in the transparent crystal and emit various light according to the angle. The core / shell particles are made and then granulated and molded by applying heat to form a molding. .

Science 1995, 270, 1335 and J. Phy. Chem. B 1998, 102, 3068 discloses a superlattice in which quantum dots are periodically arranged by self-assembly of quantum dots with ligands coordinated around them. In these superlattices, the quantum dots are connected to each other through organic molecules, that is, ligands, so that a discontinuous array of organic materials forms a matrix.

In the prior art, when the core particles are uniformly dispersed in the matrix made of the shell, the core and the shell are the polymer resin, and when the core is the quantum dot, the matrix is the organic molecule even if the core particles are uniformly dispersed. .

When the matrix is composed of organic molecular ligands, the lattice structure cannot be maintained stably, and it is also affected by processes such as high temperature firing during the manufacture of various devices, and stable driving is also prevented from temperature changes and frequency changes generated during operation of the devices. It is difficult to use it for various components.

Accordingly, there is a need for a new material capable of uniformly dispersing quantum dots in a matrix and stably presenting the spacing between quantum dots to control the properties of an optical electrical device including the matrix.

The technical problem to be achieved by the present invention is to provide a nanocomposite material in which quantum dots are periodically arranged in an inorganic matrix.

Another object of the present invention is to provide a method of manufacturing the nanocomposite material.

The present invention to achieve the above technical problem,

Inorganic matrix materials;                     

Core quantum dots periodically arranged in the matrix;

It provides a nanocomposite material comprising a.

According to an embodiment of the present invention, the melting point of the quantum dot is preferably higher than the melting point of the matrix.

According to an embodiment of the present invention, the quantum dots are (Group IV-VI) / (Group IV-VI), Group II-VI) / Group IV-VI, Group IV-VI / II-VI ), (II-VI / II-VI), (III-V) / (Group IV-VI) and (III-V) / (Group II-VI) and the like are preferred.

According to an embodiment of the present invention, the quantum dot is PbSe / PbTe, PbTe / PbSe, PbSe / PbS, PbS / PbSe, PbTe / PbS, PbS / PbTe, CdSe / PbTe, CdTe / PbSe, CdSe / PbS, PbS / CdSe, PbTe / CdS, PbS / CdTe, CdS / PbTe, CdSe / PbSe, CdTe / PbS, PbS / CdS, PbTe / CdTe, PbS / CdSe, CdTe / PbTe, CdS / PbSe, CdS / PbC, PbTe / CdSe, PbS / CdS, CdSe / CdS, CdSe / ZnS, CdS / ZnS, InP / CdS, InP / ZnS, InP / ZnSe, InAs / CdS, InAs / ZnS, InAs / ZnSe, and the like are preferred.

According to an embodiment of the present invention, the size of the quantum dot is preferably 2 nm or more.

According to an embodiment of the present invention, the distance between the quantum dots is preferably 0.5 nm or more.

The present invention to achieve the above other technical problem,

Arranging core / shell quantum dots on a substrate:                     

Annealing the substrate on which the quantum dots are arranged;

It provides a nano-composite manufacturing method comprising a.

Hereinafter, the present invention will be described in more detail.

The nanocomposite material according to the present invention includes an inorganic matrix material and a quantum dot, and unlike conventional nanocomposite materials having irregular quantum dots arranged in a matrix, it is difficult to control optical and electrical properties and poor performance as a thermoelectric material. Quantum dots can form nanocrystalline superlattices that are regularly uniformly arranged in two or three dimensions, allowing control of optical and electrical properties and exhibiting better thermoelectric performance indexes.

The nanocomposite material of the present invention preferably comprises an inorganic matrix material and core quantum dots periodically arranged in the matrix. In the present invention, the quantum dots are arranged regularly in a matrix to form a superlattice that is periodically repeated. If a crystal having a nano structure such as a quantum dot is repeatedly repeated, it becomes like a structure having a certain lattice, and thus the size and structure of the lattice are changed according to the size of the quantum dot, and as a result, the optical and electrical characteristics of the entire structure are changed.

In the present invention, the matrix / core quantum dots are not particularly limited as long as the matrix / core quantum dots are made of an inorganic material, but a semiconductor is preferable. More specifically, the inorganic matrix / inorganic quantum dots are (Groups IV-VI) / (Groups IV-VI), (Groups II-VI) / (Groups IV-VI), (Groups IV-VI / II-VI) , (Group II-VI / II-VI), (Group III-V) / (Group IV-VI) and (Group III-V) / (Group II-VI).

More specifically, the quantum dots used in the present invention are PbSe / PbTe, PbTe / PbSe, PbSe / PbS, PbS / PbSe, PbTe / PbS, PbS / PbTe, CdSe / PbTe, CdTe / PbSe, CdSe / PbS, PbS / CdSe , PbTe / CdS, PbS / CdTe, CdS / PbTe, CdSe / PbSe, CdTe / PbS, PbS / CdS, PbTe / CdTe, PbS / CdSe, CdTe / PbTe, CdS / PbSe, CdS / PbCe, / CdSe, PbS / CdS CdSe / CdS, CdSe / ZnS, CdS / ZnS, InP / CdS, InP / ZnS, InP / ZnSe, InAs / CdS, InAs / ZnS, and InAs / ZnSe, etc. are preferred but not limited thereto. Any element may be used as long as it can be used in the art.

In the present invention, the quantum dots are preferably monodisperse. That is, the quantum dots are preferably uniform in size and shape. In the case where the quantum dots are polydispersed, the distance between particles is not uniform, resulting in a kind of defect, resulting in deterioration of the physical properties of the composite material. Therefore, the dispersion of the quantum dots is preferably less than 12% dispersion of the average diameter of the quantum dots.

The annealing step is performed by annealing using the difference between the melting point of the shell and the core, and by surface reconstruction due to fusion on the surface of the core / shell particle shell or movement of surface atoms. And annealing to form a matrix.

In the method using the shell of the quantum dot and the melting point of the core, it is preferable that the melting point of the core is higher than the melting point of the shell. The nanocomposite material of the present invention is obtained by annealing after regularly arranging quantum dots consisting of a core / shell. Therefore, even when the shell melts during the annealing, the cores must be kept in a solid state so that the cores can be uniformly arranged while maintaining their original shape in the shell matrix. The larger the difference between the melting point of the core and the shell is, the better. This is because the smaller the difference in melting point is, the material forming the core and the shell is an alloy of two or more materials, so that the melting point exists over a wide range so that the shell may melt to the core before melting to some extent.

In the method by fusion or surface reconstruction at the core / shell particle shell surface, it is preferable to anneal for 3 to 20 hours in a vacuum or nitrogen atmosphere. If it is less than 3 hours, annealing is not enough, and if it exceeds 20 hours, there is no difference in the effect.

In this case, the melting point of the core and the shell is similar, or even if the melting point of the shell is higher than the core, the reaction temperature may vary depending on the characteristics of the quantum particles used, the temperature of 300 to 600 degrees is preferred. If it is less than 300 degrees, annealing does not occur properly, and if it exceeds 600 degrees, the matrix structure is destroyed by heat.

In the present invention, the quantum dots are preferably arranged in two or three dimensions. That is, the quantum dots may form a monolayer and may be arranged in three dimensions by overlapping the monolayers. How many dimensions the quantum dots are arranged can be arbitrarily determined and determined according to the required conditions.

In the present invention, the size of the quantum dot is not particularly limited as long as it can exhibit a quantum confinement effect, but is preferably 2 nm to 20 nm. If it is less than 2 nm, there is a problem in that it is difficult to form quantum dot particles or a chemically unstable state, and if it exceeds 20 nm, there is a problem that a quantum limiting effect cannot be obtained.

In the present invention, the distance between the quantum dots is preferably 0.5 nm or more. Since the thickness of the surface of the monolayer of the shell is about 0.3 nm or more, it is difficult to form a matrix having a quantum dot distance of 0.5 nm or less by the above method. It is preferable that the distance between the quantum dots is less than 100 nm. If the distance between the quantum dots is less than this, there is a problem that uniform arrangement is difficult because the distance between the quantum dots is too far.

The nanocomposite material can be used in various fields but is preferably a thermoelectric device. It is known that having a superlattice structure with reduced dimensions in thermoelectric devices limits the electronic density of states, which can greatly improve the performance of thermoelectric devices, leading to quantum wells over bulk semiconductors. In comparison to quantum wells, the quantum wire is expected to show better performance because of its higher limit of state electron density, and is now recognized as the most suitable material. However, in the case of the conventional molecular beam epitaxy, the process is difficult and uniform arrangement is difficult, while the quantum dot superlattice according to the present invention is easy to manufacture and has a uniform arrangement, which is suitable for the above purpose.

Nanocomposite device manufacturing method according to the present invention is as follows.                     

First, the core / shell quantum dots are arranged on a substrate, and the nanocomposite is manufactured by annealing the substrate on which the quantum dots are arranged. The method is shown schematically in FIG. 1. First prepare a core / shell quantum dot. Core / shell quantum dots will be preceded by the synthesis step, but this step is optional. Next, the quantum dots are arranged two-dimensionally or three-dimensionally by a method such as self-assembly or dip coating. The surface is then reformed to form a continuous matrix by annealing.

It is preferable that the shell of the said quantum dot forms a continuous phase by annealing in the said manufacturing method. That is, it is preferable that the shell forms a continuous phase due to surface reconstruction of the shell alone without applying a constant heat to the core.

In the above manufacturing method, it is preferable that the core quantum dots are regularly arranged on the shell continuous. When the shell is partially melted by the annealing, the core particles are smoothly moved, and the most stable energy state is found by the repulsion with the cores around. The densely arranged regularly in this energy state. Such an arrangement may include, but is not limited to, a ccp (cubic-close-packed) structure or a fcc (face-centered-cubic) structure.

In this case, when organic molecules are coordinated on the surface of the core / shell quantum dots, it is preferable to adjust the annealing temperature above the temperature at which they can be completely burned and vaporized. If the vaporization temperature is higher than the melting point of the core or shell, it is necessary to remove the coordinated organic molecules.                     

Moreover, it is preferable that reaction conditions at the time of the said annealing are performed in a vacuum or nitrogen atmosphere. This is because in the case of a vacuum or nitrogen atmosphere, annealing can be performed without chemical reaction such as oxidation.

In the manufacturing method, the average diameter of the core / shell quantum dots is not particularly limited as long as it can exhibit a quantum limiting effect, but is preferably 2 nm or more, more preferably 2 nm to 20 nm. If the average diameter of the core / shell quantum dots exceeds 20 nm, there is a problem in that the quantum limiting effect cannot be obtained, and if the average diameter of the core / shell quantum dots is less than 2 nm, it is difficult to form quantum dot particles or there is a problem that the quantum dots become chemically unstable.

In addition, the average diameter of the core in the core / shell quantum dot is not particularly limited, but is preferably 1.5 nm or more, more preferably 1.5 to 20 nm. If the average diameter of the core quantum dots exceeds 20 nm, there is a problem that the quantum limiting effect cannot be obtained, and if the average diameter of the core quantum dots is less than 1.5 nm, it is difficult to form quantum dot particles or there is a problem that the quantum dots become chemically unstable.

In the core / shell quantum dots, the shell is continuous by annealing so that only the core quantum dots are present in the matrix. The distance between the cores depends on the size of the core and the size of the shell, which in turn determines the size of the grating.

In the above manufacturing method, the method of arranging the core / shell quantum dots on the substrate is not particularly limited as long as the regular arrangement of the quantum dots is possible, but may be self-assembly, sedimentation, spin coating, solvent evaporation, dip coating, spraying. Coating and LB (Langmuir-Blodgett) methods are preferred.

When arranged in this manner, the core / shell quantum dots may be arranged two-dimensionally or three-dimensionally on a substrate.

The manufacturing method preferably further comprises synthesizing core / shell quantum dots. The method for preparing core / shell quantum dots is generally a wet chemical synthesis method. In some cases core / shell quantum dots are available, but for most new materials synthesis will be required. Therefore, the method for synthesizing core / shell quantum dots will be described in more detail.

Generally, a dispersion solvent and a single precursor are used to synthesize quantum dots coordinated with the dispersion solvent. In order to synthesize the quantum dots by a chemical method, the dispersion solvent should be one capable of stably dispersing the quantum dots. That is, the solvent should be able to coordinate the individual quantum dots, have a certain size to be able to control the crystal growth rate, to be stable at the crystal growth temperature and to be able to disperse the quantum dots in the colloidal state when the quantum dots are distributed do. Examples of the solvent include alkyl phosphine, alkyl phosphine oxide, alkyl amine, and the like, and two or more of them may be used.

Phosphorus, phosphate or nitrogen in the solvent serves to coordinate with the surface of the quantum dots and the alkyl group preferably has 8 or more carbons to freeze the boiling point of the solvent and provide some size to the solvent. The solvent is relatively stable in the air, but may be acidified when the temperature is high, so that the solvent may be maintained in an inert atmosphere and pressurized as necessary. Since the reaction temperature affects the crystal growth rate, it may be selected in the range of 25 to 350 ° C. in consideration of the properties of the quantum dot precursor.

Generally, a method of synthesizing a quantum dot using a precursor includes a method of separately adding a metal precursor or a chalcogenide precursor and a method of pyrolyzing using a single precursor.

It is important to rapidly inject the quantum dot precursor so that all precursors can be injected into the solvent at the same time when the temperature of the reaction system composed of the dispersion solvent is maintained at a certain level. Therefore, the precursor should be dissolved in a specific solvent so that it can be quickly and uniformly dispersed in the dispersion solvent, and the viscosity of the precursor solution should be adjusted to control the injection speed. Pyridine, alkylamines, alkyl phosphines are preferred because the specific solvents do not decompose during the reaction, have high solubility in precursors and easy viscosity control.

When the quantum dot core is formed by the reaction, a precursor of an inorganic material to form a shell portion is further injected into the core expression. When injecting the precursor corresponding to the shell, the precursor should be slowly injected so as not to exceed a certain concentration in the reaction system so that the precursor does not nucleate and is deposited on the surface of the core that has already been generated.

Once the desired core / shell quantum dots are formed, the reaction solvent temperature is dropped to stop the crystal growth of the quantum dots. To this end, an organic solvent having a low boiling point may be added to allow the solvent to absorb heat by evaporation energy, and the amount of the solvent may be adjusted to lower the reaction system to a temperature below a certain temperature to inhibit crystal growth. The size of the quantum dot can be controlled by adjusting the reaction time.

Since the synthesized quantum dots are dispersed in the solvent in the colloidal state, the quantum dots are separated from the solvent by centrifugation. In this process, in order to reduce the size of the quantum dot having a distribution in the synthesis step more selectively, the uniformity of the quantum dot can be increased by the selective precipitation method. The selective precipitation method separates the quantum dot size by controlling the precipitation rate during centrifugation by controlling the ratio of the capping material substituted on the surface of the quantum dot and the ratio of the solvent having a good affinity to the solvent having a poor affinity. The quantum dots thus obtained can be easily dispersed and stored in most organic solvents because the surface is coordinated with the dispersion solvent used in the synthesis.

In order to form a regular arrangement by self-assembly, it is necessary to replace the coordinated dispersion solvent with another ligand capable of covalent bonding with a metal, for example dithiol. To this end, the quantum dots are dispersed in a solution containing a high concentration of the dithiol compound, the dispersion is refluxed at a temperature of 25 to 100 ° C., and the quantum dots are separated by centrifugation.

Synthesized quantum dots can be obtained in various forms depending on the reaction conditions, various forms such as spherical, rod-shaped, star-shaped, etc. can be used to prepare a nanomaterial matrix having a variety of physical properties using these quantum dots.

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, which are intended to explain the present invention to those skilled in the art, but the present invention is not limited thereto.

Fabrication of Core / Shell Quantum Dots

PbSe Core Synthesis:

In a round flask equipped with a bump trap and thermocouple and equipped with a sterling bar, 2 g of lead oxide and 6 ml of oleic acid are added to about 30 ml of diphenyl ether. Under vacuum, the mantle was heated to 150 ° C. for 30 minutes to remove the gas. The dissolved reactant was then cooled to 60 ° C. under a dry nitrogen atmosphere.

Separately, Se powder was dissolved in 20 ml tri-n-octylphosphine (hereinafter abbreviated as TOP, 20 ml) in a glove box of inert atmosphere, and dissolved to make a 1 M solution.

Separately prepared 30 ml of diphenyl ether was heated to 150 degrees in a nitrogen atmosphere, and then the mixture solution of the Pb and Se precursors was rapidly injected. The reaction temperature instantaneously fell below 120 degrees and was again heated to 150 degrees and heated with stirring for 15 minutes. The reaction was then cooled to 60 ° C. The average diameter of the core was 6 nm.

PbSe / PbTe Core / Shell Synthesis:

Using the same reaction apparatus as above, 30 ml of phenyl ether was heated to 100 ° C. under vacuum for 1 hour to remove gas, and then heated to 150 ° C. in a nitrogen atmosphere. A portion of the solution containing the PbSe core (5 mg PbSe) was injected into the phenyl ether.

Here, about 3 ml of a Pb and 1M Te / TOP mixed solution (Pb: Te = 1: 3 molar ratio) was added dropwise to the reaction over about 1 hour by the same method as prepared for synthesizing the PbSe core. After adding the solution the reaction was held at 150 ° C. for 30 minutes.

Finally, the reaction was cooled to 60 ° C. and 20 mL butanol was added to prevent solidification of the TOPO. The quantum dots synthesized by centrifugation were separated and dispersed in a toluene solvent. The synthesized quantum dots are PbSe / PbTe core / shell structures. 2 and 3 are TEM and HRTEM photographs of synthesized PbSe / PbTe quantum dots. The average diameter of the quantum dots was 7 nm.

Ligand Substitutions:

Toluene solution (100 mg) containing the PbSe / PbTe quantum dots was added at a concentration of 10 mM to 1,5-hexanedithiol and refluxed at 70 ° C. with stirring for 24 hours. The refluxed solution was centrifuged to separate precipitated quantum dots.

The quantum dots were again dispersed in toluene, 1,5-hexanedithiol was added at the same concentration, refluxed, and then centrifuged. The above procedure was repeated three times to prepare quantum dots in which the surface was mostly substituted with dithiol. Since the surface is hydrophilic, the quantum dot whose surface is substituted with dithiol can be stably stored by dispersing it in an ethanol solvent. As shown in FIGS. 2 and 3, the TEM and HRTEM images of the synthesized quantum dots have a size of 7 nm.

Quantum dot thin film manufacturing

Example 1

PbSe / PbTe quantum dots having a core average diameter of 6 nm and core / shell quantum dots having an average diameter of 7 nm substituted with dithiol were used.

A magnesium fluoride (MgF ₂ ) substrate was inserted into a 0.5 wt% quantum dot dispersion at an angle of about 15 degrees using a dip coater to program the dip coating process, and 0.1 cm / min after about 20 seconds. The substrate was removed from the solution at the rate of. After drying the substrate in air and washing the film with the same ethanol solvent, the substrate was heat treated at a temperature of about 100 ° C. to form disulfide bonds, and coating the quantum dots was repeated 400 times.

The prepared quantum dot thin film was annealed at 350 ° C. for 3 hours under vacuum atmosphere. PnSe quantum dots are regularly arranged in a matrix in which all of the dithiols are decomposed and vaporized by the annealing and PbTe forms a continuous phase.

Example 2

Except that the average diameter of the PbSe / PbTe quantum dot in Example 1 is 8 nm was carried out the same process as in Example 1 to prepare a quantum dot. The average diameter can be controlled by adjusting the reaction time. The size of only the core quantum dots is the same as in Example 1.

Example 3

Except that the average diameter of the PbSe / PbTe quantum dot in Example 1 is 9 nm was carried out the same process as in Example 1 to prepare a quantum dot. The average diameter can be controlled by adjusting the reaction time. The size of only the core quantum dots is the same as in Example 1.

Nanocomposite material according to the present invention has the form of a continuous phase and a core particle using inorganic nanoparticles, it is possible to control the size of the core / shell nanoparticles and the regular arrangement of the quantum dots in the continuous phase to control the optical and electrical properties It shows excellent performance as a thermoelectric material, so it can be used for various magneto-optical, thermoelectric, and electro-magnetic devices.

Claims (16)

Inorganic matrix materials; And Core quantum dots periodically arranged in the matrix; Nanocomposite material comprising a. The nanocomposite material according to claim 1, wherein the melting point of the quantum dot is higher than the melting point of the matrix. The method according to claim 1, wherein the quantum dots (Group IV-VI) / (Group IV-VI), (Group II-VI) / (Group IV-VI), (Group IV-VI / Group II-VI), ( Nano, characterized in that at least one selected from the group consisting of II-VI / II-VI), (III-V) / (Group IV-VI) and (III-V) / (Group II-VI) Composite materials. The method of claim 3, wherein the quantum dot PbSe / PbTe, PbTe / PbSe, PbSe / PbS, PbS / PbSe, PbTe / PbS, PbS / PbTe, CdSe / PbTe, CdTe / PbSe, CdSe / PbS, PbS / CdSe, PbS / CbSe, / CdS, PbS / CdTe, CdS / PbTe, CdSe / PbSe, CdTe / PbS, PbS / CdS, PbTe / CdTe, PbS / CdSe, CdTe / PbTe, CdS / PbSe, CdS / PbS, PbS / CdT , PbS / CdS CdSe / CdS, CdSe / ZnS, CdS / ZnS, InP / CdS, InP / ZnS, InP / ZnSe, InAs / CdS, InAs / ZnS, and InAs / ZnSe Nanocomposites. The nanocomposite material according to claim 1, wherein the quantum dot has a size of 2 nm or more. The nanocomposite material according to claim 1, wherein the distance between the quantum dots is 0.5 nm or more. Arranging core / shell quantum dots on a substrate: Annealing the substrate on which the quantum dots are arranged; Nanocomposite manufacturing method comprising a. The method of manufacturing a nanocomposite according to claim 7, wherein the shell of the quantum dot forms a continuous phase by the annealing. The method of claim 8, wherein the core quantum dots are periodically arranged in the continuous phase. 8. The method of claim 7 wherein the annealing temperature is above the melting point of the quantum dot shell and below the melting point of the quantum dot core. 8. The method of claim 7, wherein the annealing step is annealed for at least 3 hours at a temperature of at least 300 degrees. The method of claim 11, wherein the annealing is performed in a vacuum or nitrogen atmosphere. 8. The method of claim 7 wherein the average diameter of the core / shell quantum dots is at least 2 nm. The method of claim 7, wherein an average diameter of the core quantum dots is 1.5 nm or more. 8. The method of claim 7, wherein the method of arranging the core / shell quantum dots on a substrate is at least one selected from the group consisting of self-assembly, spin coating, dip coating, solvent evaporation, spray coating and LB. Nanocomposite manufacturing method to use. 8. The method of claim 7, wherein the method further comprises the step of synthesizing the core / shell quantum dots.

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