KR20060075874A - Device for logic or memory using nanocrystals between cross metal electrodes and production method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a logic element or a memory element and a method of manufacturing the same, and more particularly, to a logic element or a memory element using nanocrystals between intersecting electrodes and a method of manufacturing the same. According to the present invention, a method of manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes includes (a) depositing a first electrode on a semiconductor substrate, and (b) depositing a first insulating layer on top of the deposited white metal. Depositing a white metal which can be formed into nano-sized crystals on the insulating film, (d) depositing a second insulating film on top of the white metal, and (e) depositing on the white metal. Generating dispersed nanocrystals by applying heat at a predetermined temperature and time, and (f) depositing a second electrode on the upper portion of the second insulating film not parallel to the first electrode. According to the present invention, a logic device or a memory device may be implemented using a property of trapping electrons in a thin film in a thin film structure including nano-sized crystals.

Logic elements, memory elements, nanocrystals, semiconductors, white metals.

Description

Device for logic or memory using nanocrystals between cross metal electrodes and production method

1 is a cross-sectional view of a logic element or a memory element using an insulating film between intersecting electrodes according to the prior art.

2A is a plan view of a logic device or a memory device using nanocrystals between intersecting electrodes in accordance with a preferred embodiment of the present invention.

2B is a cross-sectional view of a logic device or memory device using nanocrystals between intersecting electrodes in accordance with a preferred embodiment of the present invention.

3 is a cross-sectional view of a memory device using nanocrystals between stacked intersecting electrodes according to a first preferred embodiment of the present invention.

4 is a cross-sectional view of a memory device using nanocrystals between stacked intersecting electrodes according to a second preferred embodiment of the present invention.

5 is a cross-sectional view of a logic device using nanocrystals between intersecting electrodes according to a third preferred embodiment of the present invention.

6 is a cross-sectional view of a logic device using nanocrystals between intersecting electrodes according to a fourth preferred embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

210: protective shield

220: second electrode

230: first electrode

240: insulating film

250: nanocrystals

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a logic device or a memory device and a method for manufacturing the same, and more particularly to a logic device or a memory device using nanocrystals spontaneously formed between intersecting electrodes and a method for manufacturing the same.

In general, flash memory is a memory device (semiconductor) that has a small power consumption and maintains the stored information without disappearing even when the power is turned off. Therefore, unlike DRAM, it can not only preserve the stored information even if power is cut off, but also can freely input and output the information. Is used.

The structure of a flash memory device includes a floating gate capable of accumulating charge in a general MOS transistor structure. That is, in a flash memory device, a floating gate is formed on a semiconductor substrate through a thin gate oxide film called a tunnel oxide film, and a control gate electrode is formed on the floating gate via a gate interlayer dielectric film. Therefore, the floating gate is electrically insulated from the semiconductor substrate and the control gate electrode by the tunnel oxide film and the gate oxide film. However, the Si-based flash memory according to the related art has a problem of performing a complicated lithography process for generating a source, a drain, and a gate.

In order to overcome this, according to the related art, a memory device using crossing electrodes is provided. 1 is a cross-sectional view of a logic element or a memory element using an insulating film between intersecting electrodes according to the prior art. Referring to Fig. 1 disclosed in US Pat. No. 6,654,069, the insulating film 6 is placed between the intersecting electrodes 7 and 8 to use the insulating film 6 as a storage region. The flow of current is determined by the strong electric force present between the intersecting electrodes, and information can be stored using a change in the electric pair moment of the ferroelectric material inserted in the insulating film. Here, when the insulating film 6 is a molecular material, a carbon organic material, or the like, various properties exist depending on the physical properties.

In addition, quantum dots spontaneously formed in compound semiconductor thin films (D. Leonard, M. Krishnamurthy, CM Reaves, SP Denbaars, and PM Petroff, Appl. Phys. Lett. 63, 3203 (1993)), Si nanocrystals formed in SiO ₂ (Sandip Tiwari, Farhan Rana, Hussein Hanfi, Allan Hartstein, Emmanuel F. Carbbe, Appl. Phys. Lett. 68, 1377 (1996)), shorted nanocrystals (RG Osifchin, WJ Mahoney, JD Bielefeld, RP Andres, JI Henderson, and CP Kubiak, Superlattices and Microstructures, 18, 283 (1995)) or defects between SiO ₂ and Si ₂ N ₄ thin films (VA Gritsenko, KA Nasyrov, Yu.N. Novikov, AL Aseev, SY Yoon, Jo -Woon Lee, E.-H. Lee, CW Kim, 47, 1651 (2003)) has been disclosed in a variety of prior art for the structure of the thin film structure capable of nano-sized crystals. In the thin film structure capable of nano-sized crystal structure, electrons are trapped in the thin film, which is a property of agglomeration by chemical or thermodynamic reaction between the nano crystal and the thin film.

However, a technology for a device for storing data using nanocrystals spontaneously formed between intersecting electrodes as described above or a logic device using the same has not been developed yet.

In addition, the information storage devices according to the prior art have improved the storage capacity of the magnetic field device by making the unit structure for storing information on the two-dimensional plane for mechanical, thermal and process reasons. In particular, metal, insulator, semiconductor, and transistor-based logic circuit devices and flash memory devices, which are currently being mass-produced, have made their gate sizes tens of nanometers, thanks to breakthrough process technologies. Therefore, the technology of increasing the integration of devices by reducing the two-dimensional unit structure has reached the physical limit.

Accordingly, in order to solve the above-mentioned problem, an object of the present invention is to provide a logic device or a memory device between crossing electrodes capable of realizing electrons in a thin film structure capable of nano-sized crystal structures. A logic device or a memory device using nanocrystals and a method of manufacturing the same are provided.

Another object of the present invention is to propose a logic device or a memory device using nanocrystals and a method of manufacturing the same between intersecting electrodes that improve the performance of the nano-floating gate by controlling the size or density of the nanocrystals dispersed in the polymer.

It is still another object of the present invention to propose a logic device or a memory device using nanocrystals between intersecting electrodes, which is simpler in fabrication of a device, compared to a conventional Si-based flash memory, and a method of manufacturing the same.

It is still another object of the present invention to propose a logic device or a memory device using nanocrystals and a method of manufacturing the same between intersecting electrodes capable of overcoming limitations of information storage by fabricating a device in a three-dimensional structure according to a stacked structure.

It is still another object of the present invention to use a quantum tunneling effect between the electrodes and the nanocrystals to store charges so that the logic device or the memory device using the nanocrystals between the intersecting electrodes that can operate the device at low power consumption and high speed. And to present a method for producing the same.                         

Other objects of the present invention will become more apparent through the preferred embodiments described below.

In order to achieve the above objects, according to an aspect of the present invention, it is possible to provide a logic device or a memory device manufacturing method using nano crystals between the crossing electrodes.

According to a preferred embodiment, a method of manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes comprises the steps of (a) depositing a first electrode on a semiconductor substrate, (b) a first on top of the deposited white metal; Depositing an insulating film, (c) depositing a white metal that can be formed into nano-sized crystals on the insulating film, (d) depositing a second insulating film on the white metal, (e) the Producing dispersed nanocrystals by applying heat to a white metal at a predetermined temperature and time, and (f) depositing a second electrode on the upper portion of the second insulating layer so as not to be parallel to the first electrode. .

Here, the first electrode and the second electrode may be a white metal, and in the step (e), the preset temperature and time may be 400 ° C. and 1 hour, respectively.

In addition, in the step (f), the second electrode may be deposited perpendicularly to the first electrode using a selective etching process, and the second electrode may be perpendicular to the first electrode on the second insulating layer. The nanocrystals may be deposited by using chemical or thermodynamic properties between the first insulating layer and the second insulating layer.

In addition, the method of manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes may further include (g) depositing a protective film on the second electrode.

In this case, the steps of (a) to (f) may be repeated a predetermined number of times so that the manufactured logic elements or memory elements may be stacked vertically.

In order to achieve the above objects, according to another aspect of the present invention, it is possible to present a logic device or a memory device using nanocrystals between the crossing electrodes.

According to a preferred embodiment, a logic element or a memory element using nanocrystals between intersecting electrodes is deposited on a first electrode deposited on a semiconductor substrate, a first insulating film deposited on top of the deposited white metal, and an upper part of the insulating film. And a white metal formed of nano-sized crystals by applying heat at a predetermined temperature and time, a second insulating film deposited on the white metal, and a second metal deposited on the second insulating film so as not to be parallel to the first electrode. It may include two electrodes.

Here, the first electrode and the second electrode may be a white metal, the predetermined temperature and time may be 400 ℃, 1 hour, respectively, and the second electrode is perpendicular to the first electrode using a selective etching process Can be deposited.

In addition, the second electrode may be deposited on the upper portion of the second insulating layer to be perpendicular to the first electrode, and the nanocrystals may be formed of electrons using chemical or thermodynamic properties between the first insulating layer or the second insulating layer. Can be captured.

In addition, the semiconductor device may further include a passivation layer deposited on the second electrode, and the manufactured logic device or memory device may be repeatedly stacked vertically by a predetermined number.

Hereinafter, a preferred embodiment of a logic device or a memory device using nanocrystals and a method for manufacturing the same between intersecting electrodes according to the present invention will be described in detail with reference to the accompanying drawings. Regardless of the sign, the same or corresponding components are given the same reference numerals and redundant description thereof will be omitted.

2A is a plan view of a logic device or a memory device using nanocrystals between intersecting electrodes according to a preferred embodiment of the present invention. Referring to FIG. 2A, a logic device or a memory device using nanocrystals between intersecting electrodes according to a preferred embodiment of the present invention may include a first electrode 230, a second electrode 220, and an insulating film 240. It is composed.

The first electrode 230 is deposited on the upper surface of the semiconductor (Si) substrate which does not react with oxygen, the insulating film 240 is deposited on the first electrode 230, and then intersects with the first electrode 230. The second electrode 220 arranged is deposited. In this case, the second electrode 220 crosses the first electrode 230 so as not to be parallel to each other, and preferably crosses vertically. Since the first electrode 230 and the second electrode 220 serve as a gate of the memory device, according to the present invention, not only the memory device but also the logic device may be implemented.

2B is a cross-sectional view of a logic device or a memory device using nanocrystals between intersecting electrodes according to a preferred embodiment of the present invention. FIG. 2B is a cross-sectional view taken along line AA of FIG. 2A. Referring to FIG. 2B, a logic device or a memory device using nanocrystals between intersecting electrodes according to a preferred embodiment of the present invention may include a protective film 210 and a second electrode. And 220, a first electrode 230, an insulating film 240, and nano crystals 250.

The passivation layer 210 removes heat generated in the active region in which the memory device or the logic device operates, and blocks electrical noise and leakage current.

The nanocrystals 250 are spontaneously formed to trap electrons in the thin film of the insulating layer 240 by confining the electrons, and use a change in current between the crossing second electrode 220 and the first electrode 230. Data is stored or used as a logic device. The layer having the structure for trapping electrons may be composed of a single layer or multiple layers. In addition, electrons are trapped in the thin film using a property that is agglomerated by a chemical or thermodynamic reaction between the nanocrystals 250 and the thin film. The property of trapping these electrons can be efficiently performed by using a catalyst.

Looking at the device manufacturing method in detail, the first electrode 230 is deposited on a Si semiconductor substrate that does not react with oxygen. The first electrode 230 may be a white metal. Platinum, iridium, osmium, rhodium, ruthenium, or the like may be used as the platinum metal. Thereafter, an insulating film 240 is deposited on the deposited first electrode 230, wherein the insulating film 240 may be a biphenyltetracarboxylic Dianhydride-p-Phenylenediamine (BPDA-PDA) type polyamic acid. The white metal may be deposited on the insulating layer 240 to form nanocrystals, and the thickness of the white metal may be 1 nm to 10 nm. Thereafter, an insulating film 240, which is a polyamic acid of BPDA-PDA type, is deposited, and heated at 400 ° C. for one hour to form a high-density nanocrystal 250 dispersed in a polyamide thin film. Thereafter, the second electrode 220 is deposited on the insulating layer 240 so as not to be parallel to the first electrode 230 to form an electrode structure having a matrix shape.

In addition, a protective layer 210 is formed on the matrix-type device to remove heat generated in the active region and to block electrical noise and leakage current so that devices of the same structure can be stacked vertically. can do.

Therefore, the efficiency of the logic device or the memory device proposed in the present invention is to efficiently and uniformly make the nanocrystals 250, the structure of the first electrode 230 and the second electrode 220, the characteristics of the material and It is influenced by the structure design of the electrode to serve as a gate.

In the above description, a plan view and a cross-sectional view of a logic device or a memory device using nanocrystals and a method of manufacturing the same using nanocrystals have been described above. Hereinafter, referring to the accompanying drawings, the nano device between intersecting electrodes according to the present invention will be described. A logic device or a memory device using crystals and a method of manufacturing the same will be described with reference to specific embodiments. Preferred embodiments according to the present invention are largely divided into two. That is, a preferred embodiment of the present invention is divided into a method of using nanocrystals between electrodes intersecting as a memory element and a method of using nanocrystals between electrodes intersecting as a logic element. The first and second embodiments described below relate to a memory element, and the third and fourth embodiments relate to a logic element. This is explained in turn.

3 is a cross-sectional view of a memory device using nanocrystals between stacked intersecting electrodes according to a first preferred embodiment of the present invention, and FIG. 4 is a cross-sectional view of stacked intersecting electrodes according to a second preferred embodiment of the present invention. It is sectional drawing of the memory element using a nanocrystal. 3 or 4, the memory device using the nanocrystals between the stacked intersecting electrodes according to the first or second embodiment of the present invention may include a protective film 210, a second electrode 220, and a second electrode. The first electrode 230, the insulating film 240, and the nanocrystals 250 are included.

Each unit is a unit including the passivation layer 210, the second electrode 220, the first electrode 230, the insulating layer 240, and the nanocrystals 250. Referring to FIG. 3, 3. Since three unit devices are stacked, a three-dimensional data storage device can be implemented. Here, the first electrode 230 included in each unit element is provided at the same position up and down.

In addition, referring to FIG. 4, three unit devices are stacked, and data may be stored in each unit device. Here, the first electrode 230 included in each unit element is embodied in a form of staggered up and down. The position and arrangement of the first electrode 230 may be combined in various ways depending on the needs of each device.

5 is a cross-sectional view of a logic device using nanocrystals between intersecting electrodes according to a third exemplary embodiment of the present invention. Referring to FIG. 5, a logic device using nanocrystals between intersecting electrodes according to a third exemplary embodiment of the present invention includes an electrode 510, a first electrode 530, and a second electrode 520 of a transistor. It is configured by.

The first electrode 530 and the second electrode 520 are electrodes in which main current flows, and the arrows shown between the first electrode 530 and the second electrode 520 indicate the direction in which the current flows and thus the position Expresses that it is an active layer. The electrode 510 of the transistor uses a modified modified gate electrode, and various embodiments can be expressed by connecting the modified gate electrode. For example, specific electrodes of stacked unit devices and specific electrodes of other unit devices may be used to implement respective electrodes of the transistor.

6 is a cross-sectional view of a logic device using nanocrystals between intersecting electrodes according to a fourth preferred embodiment of the present invention. Referring to FIG. 6, a logic device using nanocrystals between intersecting electrodes according to a fourth exemplary embodiment of the present invention may include a second electrode 620, a first electrode 630, a connection electrode 660, and a nanocrystal. 650 and the electrode 670 of the transistor.

According to the needs of the logic device to be implemented, the second electrode 620 and the first electrode 630 may be connected to each other using the connection electrode 660, and the electrode 670 of the transistor may also be modified using a modified gate electrode around the periphery. Various embodiments may be represented. Referring to FIG. 6, each electrode of a transistor may be implemented using specific electrodes of a first unit element below and specific electrodes of a third unit element below.

The present invention is not limited to the above embodiments, and many variations are possible by those skilled in the art within the spirit of the present invention.

As described above, a logic device or a memory device using nanocrystals between intersecting electrodes according to the present invention, and a method of manufacturing the same, employ a logic device or memory using a property of trapping electrons in a thin film in a thin film structure including nano-sized crystals. The device can be implemented.

In addition, a logic device or a memory device using nanocrystals between intersecting electrodes according to the present invention and a method of manufacturing the same may improve the performance of the nano floating gate by controlling the size or density of the nanocrystals dispersed in the polymer.

In addition, a logic device or a memory device using nanocrystals between intersecting electrodes according to the present invention and a method of fabricating the same are simpler to fabricate a device than a conventional Si based flash memory.                     

In addition, a logic device or a memory device using nanocrystals between intersecting electrodes according to the present invention and a method of manufacturing the same may overcome the limitation of information storage by manufacturing the device in a three-dimensional structure according to a stacked structure.

In addition, a logic device or a memory device using nanocrystals between intersecting electrodes according to the present invention, and a method for manufacturing the same, use a quantum tunneling effect between electrodes and nanocrystals to store charges, thereby reducing the power consumption and speed of the device. Can work.

Claims (16)

In the method of manufacturing a logic element or a memory element, (a) depositing a first electrode on the semiconductor substrate; (b) depositing a first insulating layer on the deposited white metal; (c) depositing a white metal which may be formed of nano-sized crystals on the insulating film; (d) depositing a second insulating film on top of the white metal; (e) applying heat to the white metal at a predetermined temperature and time to produce dispersed nanocrystals; And and (f) depositing a second electrode on the second insulating film so as not to be parallel to the first electrode. 2. A method of manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes. The method of claim 1, The first electrode and the second electrode is a white metal, characterized in that a logic device or a memory device manufacturing method using a nano crystal between the intersecting electrode. The method of claim 1, In step (e) The predetermined temperature and time are 400 ° C. and 1 hour, respectively. A method for manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes. The method of claim 1, In step (f) A method of manufacturing a logic device or a memory device using nanocrystals between intersecting electrodes, wherein the second electrode is deposited perpendicularly to the first electrode using a selective etching process. The method of claim 1, In step (f) The second electrode is a logic device or a memory device manufacturing method using a nano-crystal between the electrode, characterized in that the deposition on the upper portion of the second insulating film perpendicular to the first electrode. The method of claim 1, And the nanocrystals capture electrons using chemical or thermodynamic properties between the first insulating film and the second insulating film. The method of claim 1, (g) further comprising depositing a passivation film on the second electrode, the method of manufacturing a logic device or a memory device using nanocrystals between the intersecting electrodes. The method of claim 1, And repeating steps (a) to (f) for a predetermined number of times, wherein the manufactured logic elements or memory elements are stacked vertically. In a logic element or a memory element, A first electrode deposited on a semiconductor substrate; A first insulating layer deposited on the deposited white metal; A white metal deposited on the insulating layer and formed of nano-sized crystals by applying heat at a predetermined temperature and time; A second insulating layer deposited on the white metal; And And a second electrode deposited on the second insulating layer so as not to be parallel with the first electrode. 2. The method of claim 9, And the first electrode and the second electrode are white metals. A logic device or a memory device using nanocrystals between intersecting electrodes. The method of claim 9, And said predetermined temperature and time are 400 DEG C and one hour, respectively. The method of claim 9, And the second electrode is deposited perpendicularly to the first electrode using a selective etching process. The method of claim 9, The second electrode is a logic device or a memory device using nano crystals between the electrodes, characterized in that the deposition on the upper portion of the second insulating film perpendicular to the first electrode. The method of claim 9, And the nanocrystals capture electrons by using chemical or thermodynamic properties between the first insulating layer and the second insulating layer. The method of claim 9, And a protective film deposited over the second electrode. The logic device or the memory device using nanocrystals between intersecting electrodes. The method of claim 9, And a logic element or a memory element using nanocrystals between the intersecting electrodes, wherein the manufactured logic element or the memory element is repeatedly stacked vertically by a predetermined number.

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