KR20060075091A - Implanter apparatus - Google Patents

Abstract

The present invention relates to an ion implantation equipment, the disk 40 is formed through a circular measuring hole 46, the maximum amount of the ion beam passing through the measuring hole 46 by measuring the disk Faraday 60 disk ( 40) is perpendicular to the ion beam. Therefore, by analyzing the ion beam passing through the disk has the effect of always maintaining the vertical angle of the disk to the ion beam accurately.

Description

Ion Injection Equipment {IMPLANTER APPARATUS}

1 is a plan view schematically showing a conventional ion implantation equipment,

Figure 2 is a front view showing a disk of the conventional ion implantation equipment,

3 is a cross-sectional view showing a process chamber of a conventional ion implantation equipment,

Figure 4 is a front view showing a disk of the ion implantation apparatus according to the present invention,

5 is a flowchart illustrating a method of measuring a vertical angle of a disk in the ion implantation apparatus according to the present invention.

<Description of the symbols for the main parts of the drawings>

40: disc 41: Faraday Hall

43: first motor 44: second motor

45: third motor 46: measuring hole

50: process chamber 60: disc Faraday

70: dose integral controller

The present invention relates to an ion implantation apparatus, and more particularly, to an ion implantation apparatus capable of ion implantation at a precise angle of incidence on a disk located inside the process chamber.

In general, the ion implantation process in the process for manufacturing a semiconductor device to make the impurities on the surface of the pure silicon (Si) wafer into the ion beam state of the plasma state, and then to penetrate the surface of the wafer to obtain a device of the required conductivity type and resistivity It is a process.

Referring to the ion implantation equipment for performing a conventional ion implantation process using the accompanying drawings as follows.

1 is a plan view schematically showing a conventional ion implantation equipment. As shown, the ion beam extracted from the source head 10 is supplied to the mass spectrometer 30 by increasing the ionization probability through the source magnet 20 and supplied to the mass spectrometer 30. The ion beam is rotated by the magnetic field and quantitatively analyzed and injected into the wafer W mounted on the disk 40 in the process chamber 50.

The process chamber 50 including the disk 40 is as shown in FIGS. 2 and 3. In the disk 4, a plurality of wafers W are fixed at regular intervals along the edges, and rectangular faraday holes 41 through which ion beams pass are formed between the wafers W.

In addition, the disk 40 has a rotating shaft 42 is coupled to the rotation center of the rear side, the first shaft 43 and the rotating shaft 42 to rotate the rotating shaft 42, the rotary shaft 42 is moved up and down The second motor 44 and the third motor 45 for rotating the whole module of the disk 40 are respectively mechanically coupled.                         

When the ion beam is incident on the front surface of the disk 40 to the wafer W fixed to the disk 40, the disk 40 is rotated by the driving of the first motor 43 so that the X axis, that is, the left and right sides of the wafer W, is rotated. Ion can be implanted constantly with respect to the disk 40. The disk 40 is moved up and down by the driving of the second motor 44, and the disk 40 is rotated by the driving of the Y-axis and the third motor 45 Ions can be implanted constantly in the Z-axis, that is, above and below the wafer W.

A disk integrator controller 70 generates and controls a dose amount by generating a current proportional to the amount of ions of an ion beam incident through the Faraday hole 41 in the rear axis of the Faraday hole 41. The disk Faraday 60 supplied with is installed.

The dose integration controller 70 calculates a dose amount through the flow of current supplied from the disk Faraday 60, and controls the process time so that the calculated dose amount reaches a preset dose amount. That is, a control signal is output to a system controller (not shown) of the ion implantation apparatus to stop ion implantation into the wafer W when the calculated dose amount reaches a preset dose amount.

In such conventional ion implantation equipment, the vertical concentration distribution of ions in Si is controlled by adjusting the amount of ions, energy of ions, and angle of incidence upon implantation of ions, of which the incident angle is incident in a direction in which the ion array is small. In this case, even a small difference in incidence angle shows a large difference in incidence depth, so that the vertical distribution of ions in Si can be greatly changed, which is an important factor.                         

Therefore, the vertical distribution of the desired ions can be obtained during ion implantation only when the angle of the disk on which the wafer is loaded is exactly aligned with the angle of the ion beam. However, in the related art, only mechanical equipment in which an error of an angle is inevitably generated has been required to develop a device capable of measuring whether a disk is correctly aligned to a reference value.

An object of the present invention is to provide an ion implantation device that can be maintained to accurately maintain the vertical angle of the disk with respect to the ion beam by analyzing the ion beam passing through the disk to solve the drawbacks as described above.

The present invention for achieving the above object, in the ion implantation equipment in which the ion implantation process is performed on the wafer on the disk located inside the process chamber, to form a circular measuring hole through the disk, passing through the measuring hole An ion implantation apparatus is provided that measures the maximum value of an ion beam at a disk Faraday so that the disk is perpendicular to the ion beam.

In addition, the present invention, in the method for measuring the vertical angle of the disk to the ion beam by analyzing the ion beam passing through the disk, (a) the amount of the ion beam passing through the measuring hole of the disk in the vertical movement state of the disk is the maximum Stopping the up and down movement of the disk in a section; (b) stopping the rotation of the disk in a section in which the amount of ion beams passing through the measuring hole of the disk is maximized in the rotation state of the disk, and (c) The rotation of the disk is stopped in a section in which the amount of the ion beam passing through the measuring hole of the disk is maximized in the rotation state of the disk, and the disk is ion beam by the steps of (a) (b) (c). It provides a method for measuring the vertical angle of the disk comprising the step of correcting the position to be perpendicular to the.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 4 is a front view showing a disk of the ion implantation equipment according to the present invention, Figure 5 is a flow chart showing a vertical angle measuring method of the disk in the ion implantation equipment according to the present invention, the same configuration as the embodiment shown in the prior art The members will be described with the same reference numerals with reference to the conventional drawings.

In the process chamber 50 in which an ion implantation process is performed on the wafer W on the disk 40, a plurality of wafers W are fixed at regular intervals along an edge, and an ion beam passes between the wafers W. A disk 40 having a rectangular Faraday hole 41 is formed, and the disk 40 is coupled to a rotating shaft 42 at the center of rotation to the rear side thereof, and the rotating shaft 42 is rotated at the rotating shaft 42. The first motor 43, the second motor 44 for moving the rotary shaft 42 up and down, and the third motor 45 for rotating the whole module of the disk 40 are mechanically coupled.                     

A disk integrator controller 70 generates and controls a dose amount by generating a current proportional to the amount of ions of an ion beam incident through the Faraday hole 41 in the rear axis of the Faraday hole 41. The disk Faraday 60 supplied with is installed.

Here, in accordance with a feature of the present invention, as shown in FIG. 4, a circular measuring hole 46 is formed through the disk 40.

The measuring hole 46 is smaller than the size of the ion beam and has a radius of about 1 mm.

The method of causing the disk 40 to be perpendicular to the ion beam through the measuring hole 46 is as follows.

(a) stopping the vertical movement of the disk in a section in which the amount of ion beams passing through the measuring hole of the disk in the vertical movement state of the disk is maximum (100); and (b) measuring the measuring hole of the disk in the rotating state of the disk. (110) the rotation of the disk is stopped in a section in which the amount of ion beam passing through is maximum (110), and (c) the rotation of the disk is in a section in which the amount of ion beam passing through the measuring hole of the disk is maximized in the rotation state of the disk. Stopping 120 and correcting the position 130 of the disk so that the disk is perpendicular to the ion beam by the steps of (a) (b) (c).

Referring to the above method in more detail with reference to FIG. 5, the disk 40 is rotated while the disk 40 is automatically set to α = 0 and β = 0 to find the reference angle and the ion beam is incident. The Faraday hole 41 is moved up and down the disk 40 by the second motor 44 in the range where the ion beam does not reach, and the ion beam passing through the measuring hole 46 is measured by the disk Faraday 60 The vertical motion of the disk 40 is stopped at the position where the maximum beam current comes out.

The rotational drive of the first motor 43 is stopped at the position where the current of the ion beam read from the disk Faraday 60 becomes maximum while rotating in the α direction, that is, +/-.

Further, the rotational driving of the third motor 45 is stopped at the position where the current of the ion beam is maximum in the β direction, that is, the rotation.

Repeating this process results in the disk 40 being perpendicular to the ion beam. At this time, the offset is corrected in the equipment so that α = 0 and β = 0.

Such a correction method is automatically performed by a program of a controller (not shown), and an ion implantation process is performed after position correction through this process before proceeding with ion implantation.

What has been described above is just one embodiment for carrying out the ion implantation equipment according to the present invention, the present invention is not limited to the above embodiment, the subject matter of the present invention as claimed in the following claims Without departing from the scope of the present invention, any person having ordinary skill in the art will have the technical spirit of the present invention to the extent that various modifications can be made.

As described above, the ion implantation apparatus according to the present invention has the effect of always maintaining the vertical angle of the disk to the ion beam accurately by analyzing the ion beam passing through the disk.

Claims (2)

In the ion implantation equipment in which an ion implantation process is performed on a wafer on a disk located inside the process chamber, A circular measuring hole is formed through the disk, An ion implantation apparatus for measuring the maximum value of the ion beam passing through the measuring hole in the disk Faraday so that the disk is perpendicular to the ion beam. In the method of measuring the vertical angle of the disk to the ion beam by analyzing the ion beam passing through the disk, (a) stopping the vertical movement of the disk in a section in which the amount of the ion beam passing through the measuring hole of the disk is maximum in the vertical movement state of the disk; (b) stopping the rotation of the disk in a section in which the amount of the ion beam passing through the measuring hole of the disk becomes maximum in the rotation state of the disk; (c) stopping the rotation of the disk in a section in which the amount of the ion beam passing through the measuring hole of the disk becomes maximum in the rotation state of the disk; (C) correcting the position of the disk so that the disk is perpendicular to the ion beam by the steps of (a) (b) (c), Method for measuring the vertical angle of the disk containing.

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