KR20060034775A - A method for depositing thin film on a wafer - Google Patents

A method for depositing thin film on a wafer Download PDF

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KR20060034775A
KR20060034775A KR1020040083516A KR20040083516A KR20060034775A KR 20060034775 A KR20060034775 A KR 20060034775A KR 1020040083516 A KR1020040083516 A KR 1020040083516A KR 20040083516 A KR20040083516 A KR 20040083516A KR 20060034775 A KR20060034775 A KR 20060034775A
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thin film
chamber
exhaust gas
film deposition
wafer
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KR1020040083516A
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Korean (ko)
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임홍주
이상규
서태욱
장호승
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주식회사 아이피에스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

Abstract

본 발명은 ALD 박막증착방법에 관한 것으로서, 증착공간이 형성된 챔버(10)와, 챔버(10) 내부에 설치되어 안착되는 웨이퍼(w)를 가열하는 스테이지히터(20)와, 웨이퍼(w)로 반응가스 및/또는 불활성가스를 공급하는 피딩라인(30)과, 챔버(10) 내의 배기가스가 퍼지되는 펌핑라인(40)과, 펌핑라인(40)과 연결되는 배기가스분석기(50)를 포함하는 박막증착장치를 이용하는 것으로서, 챔버(10) 내부로 다른 종류의 반응가스와 불활성가스의 피딩과 퍼지를 교호적으로 진행함으로써 ALD 박막증착공정을 진행하되, 펌핑라인(40)으로 배기되는 배기가스를 배기가스분석기(50)가 연속적으로 분석하여, 이 분석값을 근거로 상기 ALD 박막증착공정을 제어하는 것을 특징으로 한다.The present invention relates to an ALD thin film deposition method, comprising: a chamber (10) in which a deposition space is formed, a stage heater (20) for heating a wafer (w) installed and seated in the chamber (10), and a wafer (w). Feeding line 30 for supplying the reaction gas and / or inert gas, a pumping line 40 to purge the exhaust gas in the chamber 10, and the exhaust gas analyzer 50 is connected to the pumping line 40 By using a thin film deposition apparatus, the ALD thin film deposition process is carried out by alternately feeding and purging different kinds of reaction gas and inert gas into the chamber 10, but the exhaust gas exhausted to the pumping line 40. The exhaust gas analyzer 50 continuously analyzes and controls the ALD thin film deposition process based on this analysis value.

Description

ＡＬＤ 박막증착방법{A method for depositing thin film on a wafer}A method for depositing thin film on a wafer}

도 1은 본 발명의 ALD 박막증착방법을 수행하는 박막증착장치의 개략적 구성도.1 is a schematic configuration diagram of a thin film deposition apparatus performing the ALD thin film deposition method of the present invention.

<도면 중 주요 부분에 대한 부호의 설명><Explanation of symbols for main parts of the drawings>

10 ... 챔버 20 ... 스테이지히터10 ... chamber 20 ... stage heater

30 ... 피딩라인 40 ... 펌핑라인30 ... feeding line 40 ... pumping line

50 ... 배기가스분석기50 ... exhaust gas analyzer

본 발명은 ALD 싸이클을 반복하여 웨이퍼상에 박막을 증착하는 ALD 박막증착방법에 관한 것으로서, 상세하게는 챔버로부터 배기되는 배기가스를 연속적으로 분석하여 그 분석값을 박막증착공정에 적용하는 ALD 박막증착방법에 관한 것이다. The present invention relates to an ALD thin film deposition method for repeatedly depositing a thin film on a wafer by repeating an ALD cycle. It is about a method.

ALD 박막증착방법은, 챔버 내부에 수납된 웨이퍼상에 다른 종류를 반응가스를 교호적으로 분사함으로써 소정의 박막이 증착되도록 하는 것으로서, 피딩과 퍼지를 반복하는 싸이클을 통하여, 1 싸이클당 일정두께(1 원자층단위)씩 박막증착이 이루어지도록 한다. 이러한 방식으로 형성되는 박막은 고순도 및 전기적 특성이 우 수하여야 하고 증착되는 박막의 두께가 일정하여야 한다. In the ALD thin film deposition method, a predetermined thin film is deposited by alternately injecting different kinds of reaction gases onto a wafer housed in a chamber, and a predetermined thickness per cycle is achieved through a cycle of feeding and purging. Thin film deposition is performed by 1 atomic layer unit). Thin films formed in this way should be of high purity and electrical properties, and the thickness of the deposited films should be constant.

그런데, 웨이퍼상에 증착되는 박막은 1 싸이클을 단위로 이루어지기 때문에, 피딩되는 반응가스의 양이 변화하거나, 웨이퍼가 안착되는 스테이지 히터(stage heater)의 온도가 변화하는 등의 챔버 내부 상황이 바뀌게 되면, 증착하고자 하는 박막의 특성이 변화하게 되어 공정재현성에 문제가 있게 되고, 이에 따라 박막의 순도나 전기적 특성, 두께등이 일정하지가 않게 된다는 문제점이 있었다. However, since the thin film deposited on the wafer is formed in units of one cycle, the situation in the chamber such as the amount of reaction gas to be fed or the temperature of the stage heater on which the wafer is seated is changed. When the thin film to be deposited is changed, there is a problem in process reproducibility, and thus there is a problem that the purity, electrical properties, thickness, etc. of the thin film are not constant.

본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 챔버로부터 배기되는 배기가스를 연속적으로 분석함으로써 챔버 내부의 반응가스 유량의 변화, 반응정도, 온도변화등의 챔버 내부 상황을 알아내고, 이러한 정보를 박막증착공정에 피드백하여 적용함으로써 공정의 신뢰성을 확보할 수 있는 ALD 박막증착방법을 제공하는 것을 목적으로 한다.The present invention has been made to solve the above problems, by analyzing the exhaust gas exhausted from the chamber continuously to find out the situation inside the chamber, such as change in the reaction gas flow rate, reaction degree, temperature change, etc. It is an object of the present invention to provide an ALD thin film deposition method capable of securing process reliability by applying information to a thin film deposition process.

상기와 같은 목적을 달성하기 위하여, 본 발명에 따른 ALD 박막증착방법은, In order to achieve the above object, ALD thin film deposition method according to the present invention,

증착공간이 형성된 챔버(10)와, 상기 챔버(10) 내부에 설치되어 안착되는 웨이퍼(w)를 가열하는 스테이지히터(20)와, 상기 웨이퍼(w)로 반응가스 및/또는 불활성가스를 공급하는 피딩라인(30)과, 상기 챔버(10) 내의 배기가스가 퍼지되는 펌핑라인(40)과, 상기 펌핑라인(40)과 연결되는 배기가스분석기(50)를 포함하는 박막증착장치를 이용하는 것으로서, 상기 챔버(10) 내부로 다른 종류의 반응가스와 불활성가스의 피딩과 퍼지를 교호적으로 진행함으로써 ALD 박막증착공정을 진행하되, 상기 펌핑라인(40)으로 배기되는 배기가스를 상기 배기가스분석기(50)가 연속적으로 분석하여, 이 분석값을 근거로 상기 ALD 박막증착공정을 제어하는 것을 특징으로 한다.Supply a reaction gas and / or an inert gas to the chamber 10 in which the deposition space is formed, the stage heater 20 for heating the wafer w installed and seated in the chamber 10, and the wafer w. By using a thin film deposition apparatus including a feeding line 30, a pumping line 40 to purge the exhaust gas in the chamber 10, and an exhaust gas analyzer 50 connected to the pumping line 40 By alternately feeding and purging different kinds of reaction gas and inert gas into the chamber 10, the ALD thin film deposition process is performed, and the exhaust gas exhausted through the pumping line 40 is exhaust gas analyzer. (50) continuously analyzes and controls the said ALD thin film deposition process based on this analysis value.

이하, 본 발명에 따른 ALD 박막증착방법을 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, ALD thin film deposition method according to the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명의 ALD 박막증착방법을 수행하는 박막증착장치의 개략적 구성도이다.1 is a schematic configuration diagram of a thin film deposition apparatus for performing the ALD thin film deposition method of the present invention.

도시된 바와 같이, 본 발명에 따른 ALD 박막증착방법은, 증착공간이 형성된 챔버(10)와, 챔버(10) 내부에 설치되어 안착되는 웨이퍼(w)를 가열하는 스테이지히터(20)와, 웨이퍼(w)로 반응가스 및/또는 불활성가스를 공급하는 피딩라인(30)과, 챔버(10) 내의 배기가스가 퍼지되는 펌핑라인(40)과, 펌핑라인(40)과 연결되는 배기가스분석기(RGA : Residual Gas Analyzer, 50)를 포함하는 박막증착장치를 이용함으로써 이루어진다. As shown, the ALD thin film deposition method according to the present invention, the chamber 10, the deposition heater is formed, the stage heater 20 for heating the wafer (w) is installed and seated in the chamber 10, the wafer (w) a feeding line 30 for supplying a reaction gas and / or an inert gas, a pumping line 40 through which the exhaust gas in the chamber 10 is purged, and an exhaust gas analyzer connected to the pumping line 40 ( RGA: by using a thin film deposition apparatus including a residual gas analyzer (50).

여기서, 배기가스분석기(50)는, 증착공정중에 발생되어 펌핑라인(40)을 통하여 배기되는 배기가스를 분석함으로써, 챔버(10) 내부의 반응가스량의 변화나 잔류가스의 양을 파악할 수 있고, 뿐만 아니라 반응가스들의 반응에 의하여 생성되는 반응물을 분석하여 반응가스들간의 반응정도와, 잔류가스의 양 등을 파악할 수 있다. 즉, 배기가스분석기(50)는 공정중에 발생하는 배기가스를 분석함으로써 챔버 내부의 변화를 계속 모니터링 할 수 있는 것이다. 이러한 배기가스분석기(50)는 반도체 제조공정중에서 일반적으로 사용되는 것이기 때문에 더 이상의 상세한 설명은 생략한다. Here, the exhaust gas analyzer 50 may analyze the exhaust gas generated during the deposition process and exhausted through the pumping line 40 to determine the change in the amount of reactive gas or the amount of residual gas in the chamber 10. In addition, by analyzing the reactants generated by the reaction of the reaction gases can determine the degree of reaction between the reaction gases, the amount of residual gas and the like. That is, the exhaust gas analyzer 50 can continuously monitor the change in the chamber by analyzing the exhaust gas generated during the process. Since the exhaust gas analyzer 50 is generally used in the semiconductor manufacturing process, further description thereof will be omitted.

통상적인 ALD 박막증착공정에 있어, 빠른 시간내에 다른 종류의 반응가스들이 주기적으로 피딩과 퍼지를 반복하므로, 피딩되는 반응가스를 통하여 챔버(10) 내부에서 발생되는 박막형성등의 반응과정을 분석하는 것이 매우 어렵다. 더욱이, 생산성 향상을 위해 피딩과 퍼지 시간을 아주 짧게 하고 있는데, 피딩 또는 퍼지를 하나의 스텝(step)으로 볼때 한 스텝 단위는 0.1초 이하에서 진행되고 있어, 피딩되는 반응가스를 통하여 챔버(10) 내부의 상황을 분석하는 것은 더더욱 어렵다. 이는, 피딩되는 반응가스를 연속적으로 모니터링하여 챔버 내부 상황을 분석하는데 한계가 있음을 의미한다. In a typical ALD thin film deposition process, since different types of reaction gases are repeatedly fed and purged within a short time, the reaction process such as thin film formation generated in the chamber 10 through the fed reaction gases is analyzed. It is very difficult. In addition, the feeding and purge times are very short to improve the productivity. When the feeding or purging is performed in one step, one step unit is performed in 0.1 second or less, and the chamber 10 is fed through the reaction gas fed. Analyzing the situation inside is even more difficult. This means that there is a limit in analyzing the situation inside the chamber by continuously monitoring the reaction gas to be fed.

그러나, 본원의 경우, 피딩되는 반응가스를 분석하는 것이 아니라, 배기가스분석기(50)를 펌핑라인(40)에 직접 장착하여 배기되는 가스를 분석한다. 즉, 다른 종류의 반응가스가 챔버(10) 내부로 주기적인 피딩과 퍼지를 반복함에 따라, 반응후 배기되는 가스들의 성분(상태)도 주기적으로 바뀌게 되므로, 배기가스를 분석함으로써 피딩 및 퍼지동안에 챔버(10) 내부에서 발생되는 상황, 즉 반응가스량의 변화나 반응정도, 온도변화등의 상황 변화를 예측할 수 있다. 이러한 분석을 통하여 얻어진 분석값은 ALD 박막증착공정의 recipe를 최적화하는데 기여하게 되고, 발생가능한 문제점을 최소화시킬 수 있다. However, in the present case, rather than analyzing the reaction gas to be fed, the exhaust gas analyzer 50 is mounted directly on the pumping line 40 to analyze the exhaust gas. That is, as different kinds of reaction gases repeat the periodic feeding and purging into the chamber 10, the components (states) of the gases exhausted after the reaction also change periodically, so that the chamber during feeding and purging by analyzing the exhaust gas is analyzed. (10) It is possible to predict the situation occurring inside, that is, the change in the amount of reaction gas, the degree of reaction, or the temperature change. The analytical values obtained through this analysis contribute to optimizing the recipe of ALD thin film deposition process and can minimize the possible problems.

이렇게 ALD 박막증착이 이루어지고 있는 동안에 배기가스를 분석하여 챔버 내부 상황을 알아낼 수 있고, 이를 인터록(interlock) 기능과 연계할 수 있다. 이 경우, 챔버(10) 내부의 변화가 감지되었을 때 사고를 미연에 방지할 수 있는 시스 템을 구성할 수 있으며, 이에 따라 공정의 신뢰성 및 재현성을 증가시킬 수 있고 아울러 설비의 능력을 향상시킬 수 있다. During the ALD thin film deposition, the exhaust gas can be analyzed to find out the inside of the chamber, which can be linked to the interlock function. In this case, when a change in the inside of the chamber 10 is detected, a system can be configured to prevent an accident in advance, thereby increasing the reliability and reproducibility of the process and at the same time improving the capability of the facility. have.

본 발명은 도면에 도시된 일 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

상술한 바와 같이 본 발명에 따른 ALD 박막증착방법에 따르면, 챔버로부터 배기되는 배기가스를 연속적으로 분석함으로써 챔버 내부에서의 반응가스 유량의 변화, 반응정도, 온도변화등의 챔버 내부 상황을 알아내고, 이러한 정보를 박막증착공정에 피드백하여 적용함으로써 공정의 신뢰성을 확보할 수 있다는 효과가 있다.As described above, according to the ALD thin film deposition method according to the present invention, by analyzing the exhaust gas exhausted from the chamber continuously to find out the situation inside the chamber, such as the change in the reaction gas flow rate, reaction degree, temperature change, etc. The feedback of the information to the thin film deposition process is applied to ensure the reliability of the process.

Claims (1)

증착공간이 형성된 챔버(10)와, 상기 챔버(10) 내부에 설치되어 안착되는 웨이퍼(w)를 가열하는 스테이지히터(20)와, 상기 웨이퍼(w)로 반응가스 및/또는 불활성가스를 공급하는 피딩라인(30)과, 상기 챔버(10) 내의 배기가스가 퍼지되는 펌핑라인(40)과, 상기 펌핑라인(40)과 연결되는 배기가스분석기(50)를 포함하는 박막증착장치를 이용하는 것으로서, Supply a reaction gas and / or an inert gas to the chamber 10 in which the deposition space is formed, the stage heater 20 for heating the wafer w installed and seated in the chamber 10, and the wafer w. By using a thin film deposition apparatus including a feeding line 30, a pumping line 40 to purge the exhaust gas in the chamber 10, and an exhaust gas analyzer 50 connected to the pumping line 40 , 상기 챔버(10) 내부로 다른 종류의 반응가스와 불활성가스의 피딩과 퍼지를 교호적으로 진행함으로써 ALD 박막증착공정을 진행하되, 상기 펌핑라인(40)으로 배 기되는 배기가스를 상기 배기가스분석기(50)가 연속적으로 분석하여, 이 분석값을 근거로 상기 ALD 박막증착공정을 제어하는 것을 특징으로 하는 ALD 박막증착방법.The ALD thin film deposition process is performed by alternately feeding and purging different kinds of reaction gas and inert gas into the chamber 10, and exhaust gas exhausted through the pumping line 40 is exhaust gas analyzer. (50) continuously analyzes and controls the ALD thin film deposition process based on this analysis value.
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9951422B2 (en) 2016-01-28 2018-04-24 Samsung Electronics Co., Ltd. Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors
KR20210056576A (en) 2019-11-11 2021-05-20 솔브레인 주식회사 Metal precursor for forming thin film, thin film composition comprising the same and method for forming thin film thereof
KR20210089015A (en) 2020-01-07 2021-07-15 솔브레인 주식회사 Yttrium compound, forming method of thin film comprising the same, and semiconductor substrate preapared thereby

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9951422B2 (en) 2016-01-28 2018-04-24 Samsung Electronics Co., Ltd. Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors
KR20210056576A (en) 2019-11-11 2021-05-20 솔브레인 주식회사 Metal precursor for forming thin film, thin film composition comprising the same and method for forming thin film thereof
KR20210089015A (en) 2020-01-07 2021-07-15 솔브레인 주식회사 Yttrium compound, forming method of thin film comprising the same, and semiconductor substrate preapared thereby

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