KR20060020883A - Method of manufacturing wiring of liquid crystal display device - Google Patents

Abstract

A wiring manufacturing method of a liquid crystal display device is provided. In the wiring manufacturing method of a liquid crystal display device, first, the mold frame which has a frame structure of a wiring form is provided. Next, the mold frame is placed on the upper surface of the substrate, and the metal slurry is injected into the mold frame. Subsequently, heat is applied to the resultant to form the wiring. Here, it is preferable that the mold frame has a slurry injection portion formed at an upper portion thereof and is connected to the slurry injection portion and has a frame structure in the form of the wiring at the lower portion thereof. At this time, it is preferable to perform the step of planarizing the surface of the wiring using an electropolishing method.

Wiring, mold frame, metal slurry, electropolishing

Description

Method of manufacturing wiring of liquid crystal display device

1 is a partial cross-sectional view of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention.

2 to 6 are cross-sectional views illustrating a process of manufacturing a gate wiring of a liquid crystal display according to a first exemplary embodiment of the present invention.

7 and 8 are cross-sectional views illustrating a method of manufacturing a gate wiring of a liquid crystal display according to a second exemplary embodiment of the present invention.

9 is a cross-sectional view illustrating a method of manufacturing a gate wiring of the liquid crystal display according to the third exemplary embodiment of the present invention.

10 is a cross-sectional view illustrating the method of manufacturing the gate wiring of the liquid crystal display according to the fourth exemplary embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10: Substrate 11: Groove

30: metal slurry 31: gate wiring

40: mold frame 41: row

60: heat source

The present invention relates to a wiring manufacturing method of a liquid crystal display device.

A liquid crystal display generally injects a liquid crystal material between a color filter substrate having a common electrode, a color filter, and the like, and a thin film transistor substrate having a thin film transistor (TFT) and a pixel electrode. By applying different potentials to the pixel electrode and the common electrode, the electric field is formed to change the arrangement of the liquid crystal molecules, thereby controlling the transmittance of light to express an image.

The liquid crystal display device is completed through various processes such as forming a thin film transistor through the application and etching of an electrode material, a semiconductor layer and an insulating film on a substrate, bonding the color filter substrate and the thin film transistor substrate, and injecting and encapsulating a liquid crystal. .

The most influential process in the thin film transistor substrate manufacturing process is a photo-lithography process using a mask, and reducing the number of masks used is recognized as the most important technology of productivity improvement technology of a liquid crystal display device. .

In general, when using a mask, cleaning, photoresist coating, soft bake, align & exposure, development, hard bake, inspection ( Ten basic processes are used: ADI rework, film etch and strip. In addition, additional processes such as Hexa Methyl DeSilazane (HMDS), Vacume Dry, and Edge Bead Remover (EBR) are performed.

Due to the complicated process of photolithography as described above, in order to reduce the number of masks, wire printing using a slit or an ink-jet method has been studied.

However, the technique using the slit is difficult to set the process conditions and the wiring dimensions are not uniform.

In addition, the inkjet method has disadvantages such as an increase in resistance caused by many defects and a low production speed peculiar to inkjet.

Therefore, there is a need for a metal wiring manufacturing method capable of improving uniform metal film formation and productivity.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a wire manufacturing method of a liquid crystal display device with a simplified manufacturing process.

Another object of the present invention is to provide a wiring manufacturing method of a liquid crystal display device using a metal slurry.

Another object of the present invention is to provide a wiring manufacturing method of a liquid crystal display device capable of manufacturing various types of wiring using a metal slurry.                         

Another object of the present invention is to provide a wiring manufacturing method of a liquid crystal display device which minimizes a phenomenon in which wiring is lifted from a substrate when wiring is manufactured using a metal slurry.

Another technical problem to be achieved by the present invention is to provide a wiring manufacturing method of a liquid crystal display device which does not have a separate heat source by heat-treating using the Joule heat of the mold frame itself when manufacturing a wiring using a metal slurry.

The wiring manufacturing method of the liquid crystal display device according to the present invention for achieving the above technical problem is as follows. First, a mold frame having a frame structure in the form of wiring is prepared. Next, the mold frame is positioned on the upper surface of the substrate, and the metal slurry is injected into the mold frame. Subsequently, heat is applied to the resultant to form wiring.

Here, the mold frame, it is preferable that the slurry injection portion is formed in the upper portion and connected to the slurry injection portion and has a frame structure of the wiring form in the lower portion.

In addition, before the mold frame is positioned on the substrate, a process of forming a groove in the substrate on which the wire frame structure is located may be further performed.

In addition, it is preferable to perform the step of planarizing the surface of the wiring using an electropolishing method.                     

The metal slurry is preferably a mixture of metal nano powder and organic material. The metal nano powder may be aluminum nano powder or copper nano powder.

Specific details of other embodiments are included in the detailed description and the drawings.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

First, the structure of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention will be briefly described with reference to FIG. 1.

1 is a partial cross-sectional view of a thin film transistor substrate of a liquid crystal display according to an exemplary embodiment of the present invention.

As shown in FIG. 1, in the thin film transistor substrate of the liquid crystal display according to the exemplary embodiment, a gate wiring 31 made of a conductive material such as aluminum or copper is formed on the substrate 10. The gate line 31 includes a gate line and a gate electrode. Here, the shape of the gate wiring 31 may be formed so that a profile having a taper angle appears, and as shown in FIG. 1, it may represent a rectangular profile. The tapered angle structure refers to a profile in which both sides of the gate wiring 31 which face each other are inclined symmetrically.

In addition, on the substrate 10, a gate insulating layer 61 made of an insulating material such as silicon nitride or silicon oxide covers the gate wiring 31.

On the gate insulating layer 61, a semiconductor pattern 62 made of amorphous silicon or the like is formed to overlap the wiring corresponding to the gate electrode of the gate wiring 31.

Resistive contact layers 63 and 64 made of amorphous silicon doped with conductive impurities are formed on the semiconductor pattern 62.

On the ohmic contacts 63 and 64 and the gate insulating layer 61, a data line 65 including a data line orthogonal to the gate line and a source electrode and a drain electrode formed at a predetermined interval apart from the gate electrode is formed. have. Here, the data line 65 is made of a conductive material such as aluminum or copper.

The data line 65 and the semiconductor pattern 62 are covered with a protective film 66 made of an insulating material such as silicon nitride or silicon oxide.

In the passivation film 66, a contact hole 67 exposing the drain electrode of the data line 65 is formed. In addition, a pixel electrode 68 connected to the drain electrode through the contact hole 67 is formed on the passivation layer 66. The pixel electrode 68 is formed of a transparent conductive material such as ITO or IZO.                     

Next, a method of manufacturing a gate wiring of the liquid crystal display according to the first exemplary embodiment of the present invention will be described in detail with reference to FIGS. 2 to 6.

2 to 5 are cross-sectional views illustrating a process of manufacturing a gate wiring of a liquid crystal display according to a first exemplary embodiment of the present invention.

First, as shown in FIG. 2, a slurry injection portion 41 is formed at an upper portion thereof, is connected to the slurry injection portion 41, and a mold frame 40 having a frame 42 structure in the form of a gate wiring is formed at a lower portion thereof. It is formed and prepared by injection molding or the like.

Here, the mold frame 40 is preferably made of a metal material.

In addition, the structure of the frame 42 in the form of the gate wiring may be modified in various forms according to the shape of the gate wiring to be manufactured. In the first embodiment of the present invention, there is shown a frame structure manufactured to form a gate wiring having a taper angle so as to prevent cracking of a source and / or a drain. Here, the tapered angle structure refers to a profile in which both sides of the gate wiring, which face each other, are symmetrically inclined.

Next, as shown in Figure 3, after placing the mold frame 40 on the upper surface of the transparent substrate 10, such as glass, metal slurry 30 to the slurry injection portion 41 of the mold frame 40 Injecting through the ()), and filling into the frame 42 of the gate wiring form.

Here, the metal slurry 30 is preferably a mixture formed by mixing aluminum nano powder (Al nano-powder) or copper nano powder (Cu nano-powder) to an organic material.

On the other hand, the nano-powder is a fine powder of the metal in nano units (nano), the melting point (melting point) of the aluminum and the solid copper (solid aluminum) of 667 ℃, 1080 ℃, respectively, compared to the Melting point is 300 ℃ to 400 ℃, the melting point of the copper nano powder has a characteristic that represents 400 ℃ to 500 ℃.

Accordingly, when the metal slurry 30 filled in the frame 42 in the gate wiring form is heat-treated at a predetermined temperature in the subsequent process, the glass having a melting point of about 550 ° C. is not melted and is not melted in the metal slurry 30. Since only nano-powder can be melted, the use of the metal slurry containing the nano-powder can be advantageously applied to the process of the present invention.

Next, as shown in Figure 4, by applying the air pressure (P) by injecting a clean dry air (CDA: etc.) through the slurry inlet (41) on the top of the filled metal slurry (30) Pressure is sufficiently applied to the metal slurry 30. At the same time, the heat generated from the heat source 60 is radiated to the lower surface of the substrate 10 to heat the metal slurry 30.

At this time, the heat radiated from the lower portion of the substrate 10 is transferred to the metal slurry 30 to form a metal wiring, that is, a gate wiring 31 by the adhesion and curing action of the metal slurry 30. do. Specifically, the gate wiring 31 is formed by the organic material of the metal slurry 30 is evaporated by heating and the metal powder is adhesively bonded.                     

In this case, when the organic material in the metal slurry 30 is adopted as a material that can be easily volatilized at room temperature, the wiring may be formed by easily bonding only the metal powder phase at a low temperature.

On the other hand, since the substrate 10 is a transparent substrate such as glass, when transmitting heat by a light source, the metal slurry 30 because the light irradiated by the light source passes through the transparent substrate 10 to transmit heat. Improves densification. In addition, since heat proceeds from the lower portion of the substrate 10, the lower portion of the gate wiring 31, which is in contact with the substrate 10, becomes more compact, thereby preventing the gate wiring 31 from being lifted. have.

Next, as shown in FIG. 5, the mold frame 40 is removed to expose the gate wiring 31 formed on the substrate 10.

At this time, since the formed gate wiring 31 is a metal wiring formed by the organic material contained in the metal slurry 30 being evaporated and the remaining metal powder adhered to each other, the surface state is uneven. In other words, the surface of the gate wiring 31 has a non-uniform profile as in the form of unevenness.

The gate wiring 31 having the non-uniform profile is planarized in such a manner as electro-polishing.

The electrolytic polishing step is a method of polishing a metal surface by performing electrolysis between a gate wiring 31 (anode) to be polished and an electrode (cathode) corresponding thereto.

Specifically, the substrate 10 on which the gate wiring to be polished is formed is immersed in an electrolyte solution, the gate wiring 31 is an anode, and a cathode which does not dissolve in the electrolyte is installed to provide a direct current. do. The electrolytic solution used for electropolishing is divided into perchlorate and phosphate. The former has a risk of explosiveness, and a mixture of phosphate-chromium-sulfuric acid is mainly used.

As the electrophoresis progresses, a highly viscous liquid layer (viscous layer) containing a large amount of metal ions dissolved from the anode accumulates near the anode surface. Since the viscous layer is saturated with metal ions, the metal is hardly dissolved again and the viscosity is high, so that the viscous layer is difficult to melt, and a thin oxide layer is formed on the surface of the anode held at high potential. Under these conditions, the electric current is concentrated in the iron powder on the surface of the anode, and only the iron portion is dissolved.

Next, as shown in FIG. 6, when the electropolishing is completed, the electrolyte is drained and the substrate 10 is washed. Accordingly, the manufacturing of the gate wiring 31 flattened on the substrate 10 is completed.

Next, an insulating material (not shown) is coated to cover the formed gate line 31, and then a subsequent process of forming a data line (not shown) is performed.

Therefore, according to the first embodiment of the present invention, it is possible to simplify the manufacturing of the gate wiring by using the metal slurry, and to manufacture various types of gate wiring according to the shape of the mold frame 40.

Next, a method of manufacturing a gate wiring of a liquid crystal display according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 7 and 8.                     

7 and 8 are cross-sectional views illustrating a method of manufacturing a gate wiring of a liquid crystal display according to a second exemplary embodiment of the present invention.

The gate wiring manufacturing method of the liquid crystal display according to the second embodiment of the present invention is substantially the same as the first embodiment of the present invention except for the structure of the mold frame 40.

The structure of the mold frame 40 for manufacturing the gate wiring according to the second embodiment of the present invention is designed to have a frame structure in the form of a gate wiring having a rectangular cross section, as shown in FIG.

Here, the mold frame 40 is preferably made of a metal material.

In addition, the frame structure in the form of the gate wiring may be formed in various forms according to the shape of the gate wiring to be manufactured. In the second embodiment of the present invention, a gate structure having a rectangular cross section as shown in FIG. 8 is adopted by adopting a frame structure manufactured to form a gate wiring having a rectangular cross section so as to minimize the afterimage phenomenon of the liquid crystal display device. (31) can be manufactured.

Next, a method of manufacturing a gate wiring of a liquid crystal display according to a third exemplary embodiment of the present invention will be described with reference to FIG. 9.

9 is a cross-sectional view illustrating a method of manufacturing a gate wiring of the liquid crystal display according to the third exemplary embodiment of the present invention.

As shown in FIG. 9, the gate wiring manufacturing method of the liquid crystal display according to the third exemplary embodiment of the present invention is substantially the same as that of the first exemplary embodiment of the present invention except that the grooves 10 are formed. Same as                     

Specifically, before placing the mold frame 40 on the substrate 10, a process of forming the V-shaped groove 11 in the substrate 10 is performed.

The V-shaped groove 11 is patterned on the substrate 10 at the position where the gate wiring 31 is to be formed, and the groove 11 is patterned by irradiating a laser or the like.

As described above, the groove 11 is formed in the substrate 10, and then the mold frame 40 is positioned on the substrate 10 to form a gate wiring similarly to the first embodiment of the present invention. The metal slurry 30 is injected into the frame of the metal slurry. Accordingly, since the metal slurry 30 is also filled in the groove 11 to form the gate wiring 31, the phenomenon in which the gate wiring 31 is lifted from the substrate 10 may be further minimized.

Next, a method of manufacturing a gate wiring of the liquid crystal display according to the fourth exemplary embodiment of the present invention will be described with reference to FIG. 10.

10 is a cross-sectional view illustrating the method of manufacturing the gate wiring of the liquid crystal display according to the fourth exemplary embodiment of the present invention.

As shown in FIG. 10, the method for manufacturing a gate wiring of the liquid crystal display according to the fourth exemplary embodiment of the present invention is substantially the same as that of the first exemplary embodiment of the present invention except for a method of applying heat to the metal slurry. .

Specifically, after filling the metal slurry 30 in the frame of the gate wiring in the mold frame 40 in the same manner as in the first embodiment of the present invention, through the air pressure (P) on the metal slurry 30 At the same time the pressure is applied, the heat treatment using the Joule 'heat 41 generated in the mold frame 40.                     

Here, the row of heat 41 is applied to a voltage across the mold frame 40 formed of a metal material so that heat is generated in the mold frame 40 having a relatively high resistance to heat the metal slurry 30. do.

In this case, there is an advantage that the gate wiring can be formed without providing a heat source separately.

On the other hand, in the first to fourth embodiments of the present invention, a method of manufacturing the gate wiring of the liquid crystal display device has been described as an example. Of course, the wiring manufacturing method according to the present invention can be applied.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments and can be variously modified and implemented by those skilled in the art without departing from the technical scope of the present invention.

As described above, according to the present invention, by manufacturing the wiring of the liquid crystal display using the metal slurry containing the nano-powder, it is possible to simplify the process.

In addition, when the wire is manufactured using the metal slurry, a phenomenon in which the wire is lifted from the substrate may be minimized.

In addition, when manufacturing wirings using a metal slurry, heat treatment is performed using the Joule heat of the mold frame itself so as not to provide a separate heat source.

Claims (11)

A first step of providing a mold frame having a frame structure in the form of a wiring; Positioning the mold frame on an upper surface of the substrate, and injecting a metal slurry into the mold frame; And And a third step of forming the wiring by applying heat to the resultant product. In claim 1, The mold frame has a slurry injection portion formed on the upper portion and connected to the slurry injection portion, and has a frame structure of the wiring form in the lower portion. The method of claim 1 or 2, Before forming the mold frame on the substrate, forming a groove in the substrate on which the wiring frame structure is located. The method of claim 1 or 2, The substrate is a transparent glass, characterized in that the wiring manufacturing method of the liquid crystal display device. The method of claim 1 or 2, The third step, And radiating heat to the lower surface of the substrate to heat the wiring. The method of claim 1 or 2, The third step, And applying a voltage to both ends of the mold frame to heat-treat the metal slurry using Joule heat generated in the mold frame. The method of claim 1 or 2, The third step, And pressurizing the metal slurry by applying air pressure into the slurry injection portion. In claim 7, The pressurization of the metal slurry is performed by injecting clean dry air into the slurry injection portion. The method of claim 1 or 2, After the third step, And planarizing the surface of the wiring using an electropolishing method. The method of claim 1 or 2, The metal slurry is a wiring manufacturing method of the liquid crystal display device is a mixture of a metal nano powder and an organic material. In claim 10, The metal nano powder is aluminum nano powder or copper nano powder wiring manufacturing method of the liquid crystal display device.

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