KR20060019044A - Nitride semiconductor led and fabrication method thereof - Google Patents

Abstract

A nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A second nitride semiconductor layer formed on the active layer; A third nitride semiconductor layer comprising AlIn formed on the second nitride semiconductor layer; It includes.

In addition, the method for manufacturing a nitride semiconductor light emitting device according to the present invention, forming a buffer layer on a substrate; Forming a GaN layer over the buffer layer; Forming a first electrode layer over the GaN layer; Forming an In _x Ga _1-x N layer on the first electrode layer; Forming an active layer on the In _x Ga _1-x N layer; Forming a p-GaN layer over the active layer; forming an n-AlInN layer or a p-AlInN layer on the p-GaN layer; It includes.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention, a substrate; A buffer layer formed on the substrate; A first GaN layer doped with In formed on the buffer layer; A second GaN layer doped with Si and In formed on the first GaN layer; An In _x Ga _1-x N layer formed on the second GaN layer; An active layer formed on the In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; an n-AlInN layer or p-AlInN layer formed on the p-GaN layer; It includes.

Description

Nitride semiconductor LED and fabrication method

1 is a schematic view showing a laminated structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention;

2 is a schematic view showing a laminated structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention;

3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention;

4 is a schematic view showing a laminated structure of a fourth embodiment of a nitride semiconductor light emitting device according to the present invention;

5 is a schematic view showing a laminated structure of a fifth embodiment of a nitride semiconductor light emitting device according to the present invention;

6 is a schematic view showing a laminated structure of a sixth embodiment of a nitride semiconductor light emitting device according to the present invention;

<Explanation of symbols for the main parts of the drawings>

1, 21, 31, 51, 61, 71 ... nitride semiconductor light emitting device

2 ... substrate 4 ... buffer layer

6 ... In-doped GaN layer 8 ... Si-In co-doped GaN layer

10 ... In _x Ga _1-x N layer 12 ... Active layer

14 ... p-GaN layer 16, 54 ... n-AlInN layer

24, 52, 74 ... Super-Grading n-In _x Ga _1-x N Layer

33, 35, 39, 45, 49 ... SiN _x Cluster Layer

37, 43 ... In _y Ga _1-y N well layer 41, 47 ... In _z Ga _1-z N barrier layer

66 ... p-AlInN layer

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same.

In general, GaN-based nitride semiconductors are optical devices of blue / green light emitting diodes (LEDs) and high-speed switching and high-output devices such as metal semiconductor field effect transistors (MESFETs) and high electron mobility transistors (HEMTs) in their application fields. It is applied to an element. In particular, blue / green LED devices have already been mass-produced and global sales are increasing exponentially.

Such a GaN-based nitride semiconductor light emitting device is mainly grown on a sapphire substrate or a SiC substrate. In addition, a polycrystalline thin film of Al _y Ga _1-y N is grown as a buffer layer on a sapphire substrate or a SiC substrate at a low temperature growth temperature. Thereafter, an undoped GaN layer, a silicon-si doped n-GaN layer, or a mixed structure of the above structure is grown at a high temperature to form an n-GaN layer. In addition, a nitride semiconductor light emitting device is manufactured by forming a p-GaN layer doped with magnesium (Mg) thereon. The light emitting layer (multi-quantum well structure active layer) is formed in a sandwich structure between the n-GaN layer and the p-GaN layer.

The p-GaN layer is formed by doping Mg atoms during crystal growth. Mg atoms injected into the doping source during crystal growth should be replaced with Ga positions to act as p-GaN layers. By combining, Mg-H composites are formed in the GaN crystal layer to form a high resistance of about 10 ㏁.

Therefore, after forming the pn junction light emitting device, a subsequent activation process for breaking the Mg-H complex to replace Mg atoms with Ga sites is required. However, the light emitting device has a disadvantage in that an amount of acting as a carrier contributing to luminescence in the activation process is about 10 ¹⁷ / cm 3, which is much lower than the Mg atomic concentration of 10 ¹⁹ / cm 3 or more, so that it is difficult to form a resistive contact.

In addition, Mg atoms, which are not activated as carriers and remain in the p-GaN nitride semiconductor, serve as a center for trapping light emitted at the interface with the active layer, thereby rapidly decreasing the light output. To improve this problem, a method of increasing current injection efficiency by lowering contact resistance by using a very thin transparent resistive metal material has been used. By the way, the thin transparent resistive metal used to reduce the contact resistance generally has a light transmittance of about 75 to 80%, otherwise serves as a loss. In particular, there is a limit in reducing the operating voltage due to high contact resistance.

An object of the present invention is to provide a nitride semiconductor light emitting device capable of improving the crystallinity of the active layer constituting the nitride semiconductor light emitting device and improving the light output and reliability thereof, and a method of manufacturing the same.

In order to achieve the above object, a nitride semiconductor light emitting device according to the present invention, the first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A second nitride semiconductor layer formed on the active layer; A third nitride semiconductor layer including AlIn formed on the second nitride semiconductor layer; Its features are to include.

In addition, the nitride semiconductor light emitting device manufacturing method according to the present invention in order to achieve the above object, forming a buffer layer on a substrate; Forming a GaN layer on the buffer layer; Forming a first electrode layer on the GaN layer; Forming an In _x Ga _1-x N layer on the first electrode layer; Forming an active layer on the In _x Ga _1-x N layer; Forming a p-GaN layer on the active layer; Forming an n-AlInN layer or a p-AlInN layer on the p-GaN layer; Its features are to include.

In addition, another embodiment of the nitride semiconductor light emitting device according to the present invention to achieve the above object, the substrate; A buffer layer formed on the substrate; A first GaN layer doped with In formed on the buffer layer; A second GaN layer doped with Si and In formed on the first GaN layer; An In _x Ga _1-x N layer formed on the second GaN layer; An active layer formed on the In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; An n-AlInN layer or p-AlInN layer formed on the p-GaN layer; Its features are to include.

According to the present invention as described above, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing a stacked structure of a first embodiment of a nitride semiconductor light emitting device according to the present invention.

In the nitride semiconductor light emitting device 1 according to the present invention, as shown in FIG. 1, the buffer layer 4 is formed on the substrate 2. Here, the buffer layer 4 may be formed of an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1- It may be selected from a stacked structure of _x N / GaN.

An indium-doped In-doped GaN layer 6 is formed on the buffer layer 4, and an n-type first electrode layer is formed on the In-doped GaN layer 6. As the n-type first electrode layer, a Si-In co-doped GaN layer 8 formed by simultaneously doping silicon and indium may be employed.

In addition, an In _x Ga _1-x N layer 10 having a low indium content is formed on the Si-In co-doped GaN layer 8, and light is emitted on the In _x Ga _1-x N layer 10. The emitting active layer 12 is formed. The active layer 12 may be provided as a single quantum well structure or a multi-quantum well structure formed of an InGaN well layer / InGaN barrier layer, and an example of the stacked structure will be described in detail later with reference to FIG. 3. .

Subsequently, a p-GaN layer 14 is formed on the active layer 12. In this case, the p-GaN layer 14 may be doped with magnesium.

The n-type second electrode layer is formed on the p-GaN layer 14. Here, the n-AlInN layer 16 may be employed as the n-type second electrode layer. In this case, the n-AlInN layer 16 may be formed by doping silicon.

As described above, in the nitride semiconductor light emitting device according to the present invention, both the Si-In co-doped GaN layer 8 which is the first electrode layer and the n-AlInN layer 16 which is the second electrode layer are formed of n-type nitride. In view of the fact that the p-GaN layer 14 is formed therebetween, unlike the conventional p / n junction light emitting device, it can be interpreted as having an n / p / n junction light emitting device structure.

According to the present invention, the current concentration due to the low carrier concentration caused by the structure of the conventional p / n junction light emitting device and the low Mg doping efficiency of the p-GaN nitride semiconductor itself, resulting in increased contact resistance It will be able to provide a way to overcome the problem.

In particular, by applying the n-AlInN nitride semiconductor on the top, it is possible to use a transparent conductive oxide, such as ITO having a light transmittance of 95% or more. That is, as the transparent electrode applying the bias voltage to the n-AlInN layer, it is possible to maximize the current spreading in order to maximize the light output, and to use a transparent resistive metal or a transparent conductive oxide having excellent light transmittance. As such a material, Au alloy metals including ITO, ZnO, RuOx, IrOx and NiO or Ni may be used. By the use of such a transparent electrode it is possible to achieve a high light output of 50% or more compared to the conventional p / n junction.

In addition, according to the present invention, it is possible to lower the operating voltage due to the low contact resistance, thereby improving the reliability of the device. In particular, a large area high output light emitting device employing a flip chip method requires an essentially low operating voltage when a high current of 300 mA or more is applied. In order to apply the same current, when the contact resistance of the light emitting device itself is relatively high, the operating voltage increases, thereby generating heat of 100 ° C. or more in the light emitting device itself. As a result, the heat generated internally has a decisive influence on reliability.

Therefore, according to the n / p / n junction light emitting device according to the present invention, when the same current is applied due to the low contact resistance, it is possible to drive at a relatively low operating voltage, which has high reliability because of the low internal heat generation It is possible to provide a light emitting device.

2 is a schematic view showing a stacked structure of a second embodiment of a nitride semiconductor light emitting device according to the present invention.

In the stacked structure of the nitride semiconductor light emitting device 21 according to the second embodiment of the present invention, an indium composition is sequentially formed on the n-AlInN layer 16 as compared with the nitride semiconductor light emitting device 1 shown in FIG. 1. The super-grading n-In _x Ga _1-x N layer 24 having the energy bandgap controlled by changing to FIG. In this case, the super grading n-In _x Ga _1-x N layer 24 may have a composition range of 0 <x <0.2. In this case, silicon may be doped into the super grading n-In _x Ga _1-x N layer 24.

The nitride semiconductor light emitting device 21 having such a stacked structure may be interpreted as an n / n / p / n junction light emitting device. In the nitride semiconductor light emitting device 21 having the stacked structure, the transparent electrode to which the bias voltage is applied may be formed on the super-grading n-In _x Ga _1-x N layer 24.

Although not shown in the drawings, an InGaN / AlInGaN super lattice structure layer is formed on the n-AlInN layer 16 instead of the super-grading n-In _x Ga _1-x N layer 24. Alternatively, an InGaN / InGaN superlattice structure layer may be formed. Here, silicon may be doped into the InGaN / AlInGaN super lattice structure layer or the InGaN / InGaN super lattice structure layer.

Next, the structure of the active layer employed in the nitride semiconductor light emitting device 31 according to the present invention will be described in detail with reference to FIG. 3. 3 is a schematic view showing a laminated structure of a third embodiment of a nitride semiconductor light emitting device according to the present invention. In the stacked structure shown in FIG. 3, the description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 will be omitted.

In the nitride semiconductor light emitting device 31 according to the third embodiment of the present invention, as shown in FIG. 3, in order to increase the internal quantum efficiency, the indium content for controlling the strain of the active layer is controlled. A low low-mole In _x Ga _1-x N layer 10 is formed. In addition, on the lower and upper portions of the low-mole In _x Ga _1-x N layer 10 to improve optical output and reverse leakage current due to indium fluctuations, an atomic scale Each of the SiN _x cluster layers 33 and 35 controlled in the form of) is further provided.

In addition, the light emitting active layer may be formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer.

In FIG. 3, as an active layer, a SiN _x cluster layer 39 and 45 is formed between an In _y Ga _1-y N well layer 37 and 43 and an In _z Ga _1-z N barrier layer 41 and 47. An example of a light emitting device formed of a multi-quantum well structure is further provided. In order to improve the luminous efficiency of the active layer, the composition ratio of In _y Ga _1-y N well layer (0 <y <0.35) / SiNx cluster layer / In _z Ga _1-z N barrier layer (0 <z <0.1) You can also adjust. In addition, considering the relationship with the low-mole In _x Ga _1-x N layer 10 having a low indium content, the In _y Ga _1-y N well layer 37 (43) / In _z Ga _{1- The} indium content doped in the _z N barrier layers 41 and 47 and the indium content doped in the low-mole In _x Ga _1-x N layer 10 are 0 <x <0.1 and 0 <y <0.35, respectively. , It can be adjusted to have a value of 0 <z <0.1.

Although not shown in the drawings, an indium variation of the In _y Ga _1-y N well layer between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer is controlled. A GaN cap layer may be formed. At this time, the indium content of each of the light emitting well layer and the barrier layer is In _y Ga _1-y N (0 <y <0.35) / GaN cap / In _z Ga _1-z N (0 <z <0.1 Can be composed of

Then, after growing the last layer of the active layer consisting of a single quantum well structure or a multi-quantum well structure, the SiNx cluster layer 49 is grown to an atomic scale thickness to Mg of the p-GaN layer 14. It is possible to suppress diffusion of the element into the active layer.

4 is a schematic view showing a laminated structure of a fourth embodiment of a nitride semiconductor light emitting device according to the present invention. In the stacked structure illustrated in FIG. 4, the description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 will be omitted.

In the nitride semiconductor light emitting device 51 according to the fourth embodiment of the present invention, the super-grading n-In _x Ga _1-x N layer in which the energy band gap is controlled by sequentially changing the indium composition on the p-GaN layer 14 is provided. 52 is further formed. In addition, the n-AlInN layer 54 is further formed on the super-grading n-In _x Ga _1-x N layer 52.

The nitride semiconductor light emitting device 51 having such a laminated structure may be interpreted as an n / n / p / n junction light emitting device. In the nitride semiconductor light emitting device 51 having the stacked structure, the transparent electrode to which the bias voltage is applied may be formed in the n-AlInN layer 54.

In FIG. 4, the super-grading n-In _x Ga _1-x N layer 52 is formed on the p-GaN layer 15, but the super-grading n-In _x Ga _1-x N layer is illustrated. Instead of (52), an InGaN / AlInGaN super lattice structure layer or an InGaN / InGaN super lattice structure layer may be formed.

5 is a view schematically showing a laminated structure of a fifth embodiment of the nitride semiconductor light emitting device according to the present invention. The description of the layer (denoted by the same reference numeral) described with reference to FIG. 1 in the stacked structure shown in FIG. 5 will be omitted.

The nitride semiconductor light emitting device 61 according to the fifth embodiment of the present invention is characterized in that the p-AlInN layer 66 is formed on the p-GaN layer 16. Here, the p-AlInN layer 66 may be formed by doping with magnesium.

The nitride semiconductor light emitting device 61 having the stacked structure as described above can be described as a light emitting device having a p / n junction. However, the light emitting efficiency of the nitride semiconductor light emitting device 61 is similar to that of the other embodiments due to the physical properties of the p-AlInN layer 66. You can do it. In the nitride semiconductor light emitting device 61 having the stacked structure, the transparent electrode to which the bias voltage is applied may be formed on the p-AlInN layer 66.

6 is a schematic view showing a laminated structure of a sixth embodiment of a nitride semiconductor light emitting device according to the present invention.

In the stacked structure of the nitride semiconductor light emitting device 71 according to the sixth embodiment of the present invention, an indium composition is sequentially formed on the p-AlInN layer 66 as compared with the nitride semiconductor light emitting device 61 shown in FIG. 5. It is shown that the super-grading n-In _x Ga _1-x N layer 74 is further formed to control the energy band gap by changing to. In this case, the super grading n-In _x Ga _1-x N layer 74 may have a composition range formed at 0 <x <0.2. In this case, silicon may be doped into the super grading n-In _x Ga _1-x N layer 74.

The nitride semiconductor light emitting device 71 having such a laminated structure may be interpreted as an n / p / p / n junction light emitting device. In the nitride semiconductor light emitting device 71 having the stacked structure, the transparent electrode to which the bias voltage is applied may be formed on the super-grading n-In _x Ga _1-x N layer 74.

Although not shown in the drawings, an InGaN / AlInGaN super lattice structure layer is formed on the p-AlInN layer 66 instead of the super-grading n-In _x Ga _1-x N layer 74. Alternatively, an InGaN / InGaN superlattice structure layer may be formed. Here, silicon may be doped into the InGaN / AlInGaN super lattice structure layer or the InGaN / InGaN super lattice structure layer.

As described above, according to the nitride semiconductor light emitting device and the manufacturing method thereof according to the present invention, there is an advantage that the crystallinity of the active layer constituting the nitride semiconductor light emitting device can be improved, and the light output and reliability can be improved.

Claims (47)

A first nitride semiconductor layer; An active layer formed on the first nitride semiconductor layer; A second nitride semiconductor layer formed on the active layer; A third nitride semiconductor layer including AlIn formed on the second nitride semiconductor layer; Nitride semiconductor light emitting device comprising a. The method of claim 1, Under the first nitride semiconductor layer, Board; A buffer layer formed on the substrate; Nitride semiconductor light emitting device comprising a. The method of claim 1, The first nitride semiconductor layer, An In doped or undoped GaN layer; A first electrode layer formed on the GaN layer; An In _x Ga _1-x N layer formed on the first electrode layer; Nitride semiconductor light emitting device comprising a. The method of claim 2, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN A nitride semiconductor light emitting device, characterized in that formed and selected from the laminated structure of. The method of claim 3, wherein The first electrode layer is a nitride semiconductor light emitting device, characterized in that the silicon and indium-doped GaN layer. The method according to claim 1 or 2, The nitride semiconductor light emitting device of claim 1, wherein a first SiN _x cluster layer and a second SiN _x cluster layer are formed on the lower and upper portions of the In _x Ga _1-x N layer included in the first nitride semiconductor layer. The method of claim 6, And the first SiN _x cluster layer and the second SiN _x cluster layer have a thickness of an atomic scale. The method according to claim 1 or 2, The active layer is a nitride semiconductor light emitting device, characterized in that consisting of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 8, A nitride semiconductor light emitting device comprising a SiN _x cluster layer formed between an In _y Ga _1-y N well layer and an In _z Ga _1-z N barrier layer constituting the active layer. The method of claim 8, A GaN cap layer is formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer to control the indium variation of the In _y Ga _1-y N well layer. A nitride semiconductor light emitting device, characterized in that. The method according to any one of claims 1 to 3, A nitride semiconductor light emitting device, characterized in that a SiN _x cluster layer is formed between the active layer and the second nitride semiconductor layer. The method of claim 8, Indium content doped in the In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer and indium content doped in the In _x Ga _1-x N layer are each 0 <x <0.1, 0 A nitride semiconductor light emitting device having a value of <y <0.35, 0 <z <0.1. The method according to claim 1 or 2, The second nitride semiconductor layer is nitride semiconductor light emitting device, characterized in that formed by doping. The method according to claim 1 or 2, The third nitride semiconductor layer is a nitride semiconductor light emitting device, characterized in that formed by doping silicon or magnesium. The method according to claim 1 or 2, And a fourth nitride semiconductor layer having a super grading structure having an indium content sequentially changed therein or a superlattice structure including In or Al on the third nitride semiconductor layer. The method of claim 15, The super-grading structure is a nitride semiconductor light emitting device, characterized in that formed by In _x Ga _1-x N layer. The method of claim 15, The superlattice structure is a nitride semiconductor light emitting device, characterized in that the InGaN / AlInGaN super lattice structure layer or InGaN / InGaN super lattice structure layer. The method of claim 15, The nitride semiconductor light emitting device of claim 4, wherein the fourth nitride semiconductor layer is doped with silicon. The method according to claim 1 or 2, And a fourth nitride semiconductor layer having a super grading structure of which indium content is sequentially changed or a superlattice structure including In or Al is formed below the third nitride semiconductor layer. The method of claim 19, The super-grading structure is a nitride semiconductor light emitting device, characterized in that the In _x Ga _1-x N layer (0 <x <0.2). The method of claim 19, The superlattice structure is a nitride semiconductor light emitting device, characterized in that the InGaN / AlInGaN super lattice structure layer or InGaN / InGaN super lattice structure layer. The method according to claim 1 or 2, A nitride semiconductor light emitting device, characterized in that a transparent electrode is provided on the third nitride semiconductor layer. The method of claim 22, The transparent electrode is a nitride semiconductor light emitting device, characterized in that formed of a transparent conductive oxide or a transparent resistive metal. The method of claim 23, wherein The transparent conductive oxide is nitride semiconductor light emitting device, characterized in that formed by selecting from materials of ITO, ZnO, IrOx, RuOx, NiO. The method of claim 23, wherein The transparent resistive metal is a nitride semiconductor light emitting device, characterized in that formed of an Au alloy layer containing Ni metal. The method of claim 15, A nitride semiconductor light emitting device, characterized in that a transparent electrode is provided on the fourth nitride semiconductor layer. Forming a buffer layer over the substrate; Forming a GaN layer on the buffer layer; Forming a first electrode layer on the GaN layer; Forming an In _x Ga _1-x N layer on the first electrode layer; Forming an active layer on the In _x Ga _1-x N layer; Forming a p-GaN layer on the active layer; Forming an n-AlInN layer or a p-AlInN layer on the p-GaN layer; Nitride semiconductor light emitting device manufacturing method comprising a. The method of claim 27, On the p-GaN layer, an n-In _x Ga _1-x N layer or an InGaN / AlInGaN super lattice structure layer or InGaN / InGaN superlattice having a super grading structure with sequentially changed indium content Forming a structural layer; Nitride semiconductor light emitting device manufacturing method comprising a. The method of claim 27 or 28, The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN The method of manufacturing a nitride semiconductor light emitting device, characterized in that formed in the laminated structure of. The method of claim 27 or 28, And the first electrode layer is a GaN layer doped with silicon and indium at the same time. The method of claim 27 or 28, And a step of forming a first SiN _x cluster layer and a second SiN _x cluster layer before and after forming the In _x Ga _1-x N layer, respectively. The method of claim 31, wherein And the first SiN _x cluster layer and the second SiN _x cluster layer are formed to an atomic scale thickness. The method of claim 27 or 28, The active layer is a nitride semiconductor light emitting device, characterized in that formed of a single quantum well structure or a multi-quantum well structure formed of an In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer. The method of claim 33, And forming a SiN _x cluster layer between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer. The method of claim 33, A GaN cap layer is formed between the In _y Ga _1-y N well layer and the In _z Ga _1-z N barrier layer constituting the active layer to control the indium variation of the In _y Ga _1-y N well layer. Nitride semiconductor light emitting device manufacturing method characterized in that the step is provided. The method of claim 27 or 28, And a SiN _x cluster layer is formed between the active layer and the p-GaN layer. The method of claim 33, Indium content doped in the In _y Ga _1-y N well layer / In _z Ga _1-z N barrier layer and indium content doped in the In _x Ga _1-x N layer are each 0 <x <0.1, 0 A nitride semiconductor light emitting device manufacturing method comprising: <y <0.35, 0 <z <0.1. The method of claim 27, On the n-AlInN layer or the p-AlInN layer, the n-In _x Ga _1-x N layer or InGaN / AlInGaN super lattice structure layer of the super grading structure in which the indium content is sequentially changed Or forming an InGaN / InGaN superlattice structure layer. The method of claim 27 or 28, And forming a transparent electrode on the n-AlInN layer or the p-AlInN layer. The method of claim 38, And forming a transparent electrode on the super grading structure layer or the superlattice structure layer. Board; A buffer layer formed on the substrate; A first GaN layer doped with In formed on the buffer layer; A second GaN layer doped with Si and In formed on the first GaN layer; An In _x Ga _1-x N layer formed on the second GaN layer; An active layer formed on the In _x Ga _1-x N layer; A p-GaN layer formed on the active layer; An n-AlInN layer or p-AlInN layer formed on the p-GaN layer; Nitride semiconductor light emitting device comprising a. 42. The method of claim 41 wherein A nitride semiconductor light emitting device, characterized in that a super grading structure having a sequentially changed indium content or a nitride semiconductor layer having a superlattice structure including In or Al is formed below the n-AlInN layer or the p-AlInN layer. . 42. The method of claim 41 wherein A nitride semiconductor light emitting device, characterized in that formed on top of the n-AlInN layer or p-AlInN layer, a super grading structure having a sequentially changed indium content or a nitride semiconductor layer having a superlattice structure including In or Al. . 42. The method of claim 41 wherein The buffer layer includes an AlInN / GaN stacked structure, an InGaN / GaN superlattice structure, an In _x Ga _1-x N / GaN stacked structure, Al _x In _y Ga _{1-x, y} N / In _x Ga _1-x N / GaN A nitride semiconductor light emitting device, characterized in that formed and selected from the laminated structure of. 42. The method of claim 41 wherein And a plurality of SiN _x cluster layers formed between the second GaN layer and the p-GaN layer. The method of claim 41 or 42, A nitride semiconductor light emitting device, characterized in that a transparent electrode is formed on the n-AlInN layer or p-AlInN layer. The method of claim 43, A nitride semiconductor light emitting device, characterized in that a transparent electrode is formed on the nitride semiconductor layer of the super-grading structure or superlattice structure.

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