KR20050101662A - Gate valve apparatus of high density plasma chemical vapor deposition system - Google Patents

Abstract

The present invention relates to a gate valve device of a high density plasma chemical vapor deposition system. The gate valve device is provided between the turbopump and the process chamber. The gate valve device is opened and closed to move up and down to supply and block the high density plasma flowing from the turbo pump to the process chamber. When the gate valve device is moved upward and opened, the gate valve device includes a shield to block the high density plasma supplied from the turbo pump from being introduced into the gate valve device, thereby preventing exposure to the high density plasma. As a result, particles generated by the plasma flowing into the gate valve device are prevented.

Description

Gate valve device of high density plasma chemical vapor deposition system {GATE VALVE APPARATUS OF HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM}

TECHNICAL FIELD The present invention relates to semiconductor fabrication equipment, and more particularly to a gate valve device of a high density plasma chemical vapor deposition system for blocking particle sources.

In general, a wafer is manufactured as a chip, a semiconductor device, by repeatedly performing various processes such as a photo process, a diffusion process, an etching process, and a thin film deposition process. Among these processes, the thin film deposition process is a process of forming a thin film on a wafer. The thin film deposition process is classified into a physical vapor deposition method and a chemical vapor deposition method according to the thin film deposition method. The chemical vapor deposition method of forming a thin film on a wafer by the method is widely used.

Chemical Vapor Deposition (CVD) is a gas reaction treatment method commonly used in the semiconductor industry to coat a thin layer of material on an integrated circuit substrate surface. This CVD method is based on heat, plasma, heat and plasma decomposition and gas reaction. As the CVD film, silicon dioxide, silicon nitride, and polysilicon are commonly used, although various CVD films suitable for insulators, dielectrics, semiconductors, conductors, superconductors, and magnetic materials are known.

In particular, such a chemical vapor deposition method, AP CVD (Atmospheric Pressure Chemical Vapor Deposition) where chemical vapor deposition is performed at atmospheric pressure largely depending on the conditions under which chemical reactions occur, that is, pressure, temperature, and injected energy, in order to form a thin film, LP CVD (Low Pressure Chemical Vapor Deposition) with chemical vapor deposition at low pressure, Plasma Enhanced Chemical Vapor Deposition (PE CVD) with chemical vapor deposition with plasma at low pressure and HDP with chemical vapor deposition with high density plasma CVD (High-Density Plasma Chemical Vapor Deposition) and the like.

As an example of a facility for performing an HDP CVD process, a semiconductor manufacturing facility of Novellus, that is, a high density plasma chemical vapor deposition system (for example, a model name: SPEED SYSTEM) will be described in detail as an example.

As shown in FIG. 1, the high density plasma chemical vapor deposition system 10 includes a process chamber 2 through which a chemical vapor deposition process is performed, and a high density plasma supplying plasma to the process chamber 2. A turbopump 6 and a gate valve device 4 are provided between the process chamber 2 and the turbopump 6.

In addition, the gate valve device 4 is opened and closed by moving up and down by a mechanical mechanism provided therein, thereby supplying or blocking a high density plasma so that the process chamber 2 is cleaned and the process proceeds.

That is, the gate valve device 4 is mechanically provided in which the internal structure includes a bearing, an arm, a belt, and the like, and grease is provided to lubricate the bearing. As shown in FIG. 2A, when the gate valve 4 is closed, a high density plasma is supplied from the turbo pump 6 to the process chamber 2 to process the process. However, when the gate valve 4 is opened, as shown in FIG. 2B, a high-density plasma supplied to the process chamber 2 flows into the gate valve 4, thereby driving the mechanical valve 4. The components of, for example, bearings and grease are routed to the plasma. As a result, there is a problem that the bearing and the grease act as a particle source by a plasma attack.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and to provide a gate valve device for preventing particles generated when the gate valve of the mechanical structure of the high density plasma chemical vapor deposition system is exposed to the plasma.

According to a feature of the present invention for achieving the above object, the gate valve device of the semiconductor manufacturing equipment provided between the process chamber and the turbo pump, one side is coupled to the turbo pump, the other side is coupled to the process chamber A body portion forming a gate valve; A gate configured to move upward and downward to open and close a high density plasma flowing from the turbo pump to the process chamber; A gate driver provided inside the body to drive the gate up and down; A shielding portion provided at a lower end of the gate to prevent the high-density plasma flowing from the turbopump when the gab valve device is opened into the body portion; The high density plasma is prevented from entering the gate valve device and becoming a particle source.

Wherein the semiconductor fabrication facility is a high density plasma chemical vapor deposition system, and the gate driver has a mechanical mechanism.

Therefore, according to the present invention, when the gate valve device is opened, the gate is up and the inside of the gate valve device is shielded.

DETAILED DESCRIPTION Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3A to 3B are views illustrating an open / closed state of a gate valve device of the high density plasma chemical vapor deposition system 100 according to the present invention.

Referring to FIG. 3A, the gate valve device 104 is provided between the turbo pump 106 and the process chamber 102, and includes a body portion, a gate, a gate driver, and a shield 108.

One side of the body portion is coupled to the turbo pump 106, and the other side is coupled to the process chamber 102 to form the gate valve device 104. The gate and the gate driver are provided inside the body.

The gate driver has a mechanical mechanism provided inside the body to drive the gate up and down. For example, the gate driver is provided with a bearing, a belt, an arm, and the like, and grease is applied between the mechanical components to facilitate mechanical driving.

The gate is moved up and down by the gate driver to open and close the high density plasma flowing from the turbopump to the process chamber 102.

The shield 108 is provided at the lower end of the gate, and when the gate is moved upward to open, the shield 108 blocks the high density plasma supplied from the turbo pump 106 from being introduced into the body.

That is, the shield 108 is shielded inside the glove valve device 104 at the same time the gate is up (up) when the gage valve device is opened. Thus, the interior of the gate valve device 104 is not exposed to the process chamber 102.

Accordingly, the gate valve device 104 of the present invention prevents the high density plasma flowing into the gate valve device from generating particles by reacting with the components of the mechanical mechanism.

As described above, the gate valve device of the present invention prevents the high-density plasma supplied from the turbo pump at the gate lower end from flowing into the gate valve device, thereby preventing the cause of the particle source.

1 is a perspective view showing the configuration of a high density plasma chemical vapor deposition system according to an embodiment of the prior art;

2A to 2B are views showing an open / closed state of a gab valve device of the high density plasma chemical vapor deposition system shown in FIG. 1; And

3a to 3b are views showing the open and close state of the gate valve device of the high density plasma chemical vapor deposition system according to the present invention.

Explanation of symbols on the main parts of the drawings

100: HDP CVD System

102: chamber

104: gate valve device

106: turbo pump

Claims (3)

In a gate valve device of a semiconductor manufacturing facility provided between a process chamber and a turbo pump: A body portion of which one side is coupled to the turbo pump and the other side is coupled to the process chamber to form the gate valve; A gate configured to move upward and downward to open and close a high density plasma flowing from the turbo pump to the process chamber; A gate driver provided inside the body to drive the gate up and down; A shielding portion provided at a lower end of the gate to prevent the high-density plasma flowing from the turbopump when the gab valve device is opened into the body portion; And the high density plasma is prevented from entering the gate valve device and becoming a particle source. The method of claim 1, And the semiconductor fabrication facility is a high density plasma chemical vapor deposition system. The method of claim 1, And the gate driver has a mechanical mechanism.