KR20050070424A - Dual panel type organic electroluminescent device and method for fabricating the same - Google Patents

Abstract

According to the dual panel type organic light emitting display device and its manufacturing method according to the present invention, firstly, since the array device and the organic light emitting diode device are formed on different substrates, the production yield and productivity can be improved, and the product life can be improved. Secondly, it is possible to increase effectively, and secondly, it is easy to design thin film transistor and realize high opening ratio / high resolution because of the top emitting method. Third, organic light emitting layer and agent is formed by the automatic patterning structure without a separate shadow mask by the partition wall. Since two electrodes can be formed, process efficiency can be increased. Fourth, by forming a moisture absorbing film in the partition wall forming portion, a separate absorbent mounting space can be omitted, thereby increasing the space efficiency and effectively removing moisture from the product. .

Description

Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same

TECHNICAL FIELD The present invention relates to an organic electroluminescent device, and in particular, a pixel driver (array element layer including a thin film transistor) and a light emitting part (organic electroluminescent diode device including a light emitting layer) are formed on different substrates. The two devices are related to a dual panel type organic electroluminescent device (Active-Matrix Organic Electroluminescent Device) and a method of manufacturing the same, which are connected through separate electrical connection patterns.

One of the new flat panel displays, the organic light emitting display device is self-luminous, and thus has a better viewing angle and contrast ratio than a liquid crystal display device. In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost.

In particular, since the organic light emitting device has a very simple process unlike a liquid crystal display device or a plasma display panel (PDP), deposition and encapsulation equipment are all.

1 is a cross-sectional view of a conventional organic light emitting device panel.

As illustrated, the first and second substrates 10 and 60 are disposed to face each other, and the thin film transistor T is included on the first substrate 10 for each pixel region P, which is a minimum unit for implementing a screen. An array element layer AL is formed, and an organic light emitting diode having a structure in which a first electrode 48, an organic light emitting layer 54, and a second electrode 56 are sequentially stacked on the array element layer AL. The diode element E is formed. The light emitted from the organic light emitting layer 54 is emitted toward the transmissive electrode of the first and second electrodes 48 and 56, and may be classified into an upper light emitting method or a lower light emitting method. The bottom emission type structure in which the light emitted from the organic light emitting layer 54 selected from the translucent material is emitted toward the first electrode 48 is provided.

In addition, the second substrate 60 is a kind of encapsulation substrate, and a recess 62 is formed therein, and an organic light emitting diode device is blocked in the recess 62 to absorb moisture from the outside. The moisture absorbent 64 for protecting (E) is enclosed.

Edge portions of the first and second substrates 10 and 60 are sealed by a seal pattern 70.

2A and 2B are views of one pixel area of a conventional active matrix organic electroluminescent device, and FIG. 2A is a plan view, and FIG. 2B is a cross section taken along the cutting line " IIb-IIb " This is a cross-sectional view showing a brief description of the main components.

As illustrated, a buffer layer 12 is formed on the first substrate 10, and the semiconductor layer 14 and the capacitor electrode 16 are formed to be spaced apart from each other on the buffer layer 12. (14) The gate insulating film 18 and the gate electrode 20 are formed in order in the center part. The semiconductor layer 14 is defined as an active region IIc corresponding to the gate electrode 20, and left and right sides of the active region IIc are defined as a drain region IId and a source region IIe, respectively.

A first passivation layer 24 is formed in an area covering the gate electrode 20 and the capacitor electrode 16, and a power electrode is located at a position corresponding to the capacitor electrode 16 on the first passivation layer 24. And branched from the power supply wiring 28 formed in a second direction crossing the first direction.

A second passivation layer 30 is formed on the entire surface of the substrate covering the power electrode 26. The first and second passivation layers 24 and 30 have a drain region IId of the semiconductor layer 14 in common. The first and second contact holes 32 and 34 expose the source region IIe, and the second passivation layer 30 includes the third contact hole 36 partially expose the power electrode 26. .

The drain electrode 40 connected to the drain region IId of the semiconductor layer 14 through the first contact hole 32 and the second contact hole 34 on one side of the second protective layer 30. The source electrode 38 is connected to the source region IIe of the semiconductor layer 14 through the third electrode, and the source electrode 38 is connected to the power electrode 26 through the third contact hole 36.

In the region covering the drain electrode 40 and the source electrode 38, a third protective layer 44 having a drain contact hole 46 exposing a part of the drain electrode 40 is formed.

A light emitting part EA is defined on the third protection layer 44, and a first electrode 48 connected to the drain electrode 40 is formed in the light emitting part EA through the drain contact hole 46. The interlayer insulating film 50 is formed on the first electrode 48 to expose the main area of the first electrode 48 and cover the other area, and the light emitting part on the interlayer insulating film 50. An organic light emitting layer 54 is formed on EA, and a second electrode 56 is formed on the entire upper surface of the organic light emitting layer 54.

The semiconductor layer 14, the gate electrode 20, the source electrode 38, and the drain electrode 40 form a thin film transistor T, and the thin film transistor T includes the gate wire 22 and the data wire ( The switching thin film transistor Ts is positioned at the point where the cross section 42 is crossed, and the driving thin film transistor Td is positioned at the point where the switching thin film transistor Ts and the power supply wiring 28 cross each other.

The thin film transistor T shown in FIG. 2B corresponds to the driving thin film transistor Td.

That is, the above-described gate electrode 20 is connected to the switching thin film transistor Ts, and the above-described drain electrode 40 has an island pattern structure, and is branched from the gate wire 22 and the data wire 42. The gate electrode 20 and the source electrode 38 form a switching thin film transistor Ts.

The region where the power supply wiring 28 and the capacitor electrode 16 overlap, including the power electrode 26, forms a storage capacitance Cst.

As described with reference to FIGS. 1, 2A, and 2B, the conventional bottom emission type organic light emitting diode device is manufactured by bonding an array device and a substrate on which an organic light emitting diode is formed and a separate encapsulation substrate. . In this case, since the product of the yield of the array device and the yield of the organic light emitting diode determines the yield of the organic light emitting diode, the overall organic process of the organic light emitting diode structure yields the overall process yield by the organic electroluminescent diode process. There was a problem that is greatly limited. For example, even if the array element is satisfactorily formed, if a defect occurs due to foreign matter or other elements in the formation of the organic light emitting layer using a thin film of about 1,000 GPa, the organic electroluminescent element is determined to be a poor grade.

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there was a problem that the production yield is lowered.

In addition, the bottom emission method has a high degree of freedom and stability due to the encapsulation process, and has a problem in that it is difficult to be applied to a high-resolution product due to the limitation of the aperture ratio. In terms of product life, the conventional top emission type structure has a narrow material selection range as the cathode is generally located on the organic light emitting layer, so the transmittance is limited and the light efficiency is reduced. When the thin film protection film should be configured, there is a problem in that it does not sufficiently block outside air.

In order to solve the above problems, the present invention is to provide a high-resolution / high aperture structure active matrix organic electroluminescent device with improved production yield.

To this end, in the present invention, the array element and the organic light emitting diode element are formed on different substrates, and the dual layer for connecting the driving thin film transistor of the array element and the second electrode of the organic light emitting diode element through a separate electrical connection pattern. An object of the present invention is to provide a panel type organic electroluminescent device.

Another object of the present invention is to provide a dual panel type organic electroluminescent device including a moisture absorbing film for removing moisture of a product even without a separate absorbent mounting space.

To this end, in the present invention, in the organic light emitting diode device including a first electrode formed on the front surface of the substrate, an organic light emitting layer and a second electrode separated by pixel region, the organic light emitting layer and the second electrode is automatically patterned The moisture absorption pattern is to be formed in the partition region formed as a structure.

In order to achieve the above object, in a first aspect of the present invention, an array element layer is disposed on a first substrate and includes a thin film transistor; An electrical connection pattern electrically connected to the thin film transistor on the first array device layer; A first electrode formed under the second substrate disposed to face the first substrate; A partition wall positioned below the first electrode and formed in a non-pixel area that is a spaced interval between pixel areas, which is a minimum unit area for implementing a screen, and having a predetermined thickness with an inverse taper structure; An organic light emitting layer and a second electrode sequentially formed in the pixel region in the partition wall in a structure automatically patterned by the partition wall; A moisture absorbing film disposed under the partition wall and formed of a moisture absorbing material formed in an area range corresponding to the partition wall; And a seal pattern formed in an area surrounding the edges of the first and second substrates, wherein the first electrode, the organic light emitting layer, and the second electrode form an organic light emitting diode device, and the second electrode is connected to an electrical connection pattern. Provided is a dual panel organic electroluminescent device.

According to a second aspect of the present invention, there is provided a semiconductor device comprising: an array element layer on a first substrate, the array element layer comprising a thin film transistor; An electrical connection pattern electrically connected to the thin film transistor on the first array device layer; A first electrode formed under the second substrate disposed to face the first substrate; Sub-border walls disposed under the first electrode and formed in a non-pixel area that is a spaced interval between pixel areas, which are the smallest unit area for implementing a screen, are formed in a frame shape surrounding each pixel area, and are spaced apart from each other. A partition wall made of a reverse taper structure and having a predetermined thickness; An organic light emitting layer and a second electrode sequentially formed in the pixel region in the partition wall in a structure automatically patterned by the partition wall; And a hygroscopic film made of a moisture absorbing material formed between the sub-barrier spaced apart regions; and a seal pattern formed in an area covering the edges of the first and second substrates, wherein the first electrode, the organic light emitting layer, and the second electrode are organic electroluminescent. The second electrode provides a dual panel type organic electroluminescent device connected to an electrical connection pattern.

In the first and second features, the material forming the hygroscopic film is selected from an insulating material, the insulating material is an oxidizing material, and the oxidizing material is selected from any one of calcium oxide (CaO) or barium oxide (BaO). And an interlayer insulating film positioned in the non-pixel region between the first electrode and the partition wall.

In the second aspect, the barrier rib has a double barrier rib structure in which two sub barrier ribs are positioned between neighboring pixel regions.

In the first and second features, the first electrode is an anode, the second electrode is a cathode, and the first electrode has a light transmitting property, and the light emitted from the organic light emitting layer emits light toward the first electrode. The organic light emitting layer is composed of red, green, and blue light emitting layers to independently implement full color, and between the second substrate and the first electrode, a color filter layer unitary structure or a color filter layer and a color change layer, CCM (Color). -changing Mediums) Any one of a dual structure is further included, and the organic light emitting layer is characterized in that the monochromatic light emitting layer.

In the second aspect, the formation range of the moisture absorption film is determined by the range between the sub-barrier spacing regions, and the reverse taper structure of the partition wall corresponds to an inner structure surrounding the pixel region of the sub-barrier. .

In the first and second features, the thin film transistor includes a switching thin film transistor and a driving thin film transistor, and the thin film transistor connected to the electrical connection pattern is a driving thin film transistor.

In the third aspect, the method may further include forming an array element layer including a thin film transistor on the first substrate and an electrical connection pattern connected to the thin film transistor on the array element layer; Forming a first electrode on an entire surface of a second substrate, which is another substrate; Forming a partition wall having a predetermined thickness in an inverse taper structure on a non-pixel region positioned at a boundary portion of each pixel region above the first electrode; Sequentially forming the organic light emitting layer and the second electrode in a structure that is automatically patterned in units of pixel regions by the partition wall; Forming a moisture absorbing film made of a moisture absorbing material in a region corresponding to the partition wall on the partition wall; The electrical connection pattern and the second electrode includes a step of bonding the first and second substrates facing each other in the connecting direction, wherein the first electrode, the organic light emitting layer, the second electrode is a dual forming an organic light emitting diode device Provided is a method of manufacturing a panel type organic electroluminescent device.

According to a fourth aspect of the present invention, there is provided a semiconductor device comprising: forming an array device layer including a thin film transistor on an first substrate, and an electrical connection pattern connected to the thin film transistor on the array device layer; Forming a first electrode on an entire surface of a second substrate, which is another substrate; The non-pixel region positioned at the boundary portion of each pixel region of the upper portion of the first electrode may include sub-barriers spaced apart from each other in a frame shape surrounding the pixel region, and have an inverse taper structure based on the second substrate surface. Forming a partition wall having a predetermined thickness; Sequentially forming the organic light emitting layer and the second electrode in a structure that is automatically patterned in units of pixel regions by the partition wall; Forming a moisture absorbing film made of a moisture absorbing material in the space between the sub-partitioning walls; The electrical connection pattern and the second electrode includes a step of bonding the first and second substrates facing each other in the connecting direction, wherein the first electrode, the organic light emitting layer, the second electrode is a dual forming an organic light emitting diode device Provided is a method of manufacturing a panel type organic electroluminescent device.

In the third and fourth features, in the forming of the moisture absorbing film, the film is formed by a process capable of forming a film using a solution type moisture absorbing material, and the moisture absorbing material is selected from an insulating material, and the moisture absorbing material is an oxidizing material. The oxide-based material is selected from one of calcium oxide and barium oxide, and the film forming process may include ink jet, roll printing, screen printing, and bar coating. (bar coating) is selected from any one of the steps, in the manufacturing step of the moisture absorption film, characterized in that for using the mask having the partition forming portion as an open portion.

In the third aspect, the forming of the moisture absorbing film may be performed in a process between forming the partition wall and forming the organic light emitting layer, and in the fourth feature, forming the moisture absorbing film may include: In the process between forming the partition wall and the step of forming the organic light emitting layer, the reverse taper structure of the partition wall, characterized in that corresponding to the inner surface structure surrounding the pixel region of the sub-barrier.

In the third and fourth features, the forming of the organic light emitting layer may include sequentially forming red, green, and blue light emitting layers in units of the pixel region, and before forming the first electrode, Forming a color filter layer or a full color implementation element of a color filter layer and a CCM on a second substrate, wherein the organic light emitting layer is formed of a monochromatic light emitting layer, and forming the first electrode; The method may further include forming an interlayer insulating layer in a region corresponding to the non-pixel region.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

One embodiment according to the present invention is an embodiment for a dual panel type organic electroluminescent device implementing full color in an independent light emission method including a moisture absorption pattern.

In order to implement full color in an organic light emitting device, a single structure consisting of a separate color filter layer or a dual structure consisting of a color filter layer and a color conversion layer (CCM), a color conversion layer, and an organic light emitting layer made of a single color light emitting material are included. Alternatively, the organic light emitting layer may be composed of red, green, and blue light emitting layers, and may be driven by an independent light emitting method.

First Embodiment

3 is a cross-sectional view of a dual panel type organic light emitting display device according to a first embodiment of the present invention.

As illustrated, the first and second substrates 110 and 130 are disposed to face each other, and the array element layer A including the thin film transistor T is formed on the first substrate 110. An electrical connection pattern 120 having a predetermined thickness is formed on the array element layer A and connected to the thin film transistor T.

Substantially, the thin film transistor T corresponds to a driving thin film transistor for applying a current to the organic light emitting device, and has a reverse staggered thin film transistor structure using an amorphous silicon material.

In addition, a first electrode 132 is formed on an entire lower surface of the second substrate 130, and an interlayer insulating film 138 and an inverse taper structure are formed at a boundary between the pixel regions P under the first electrode 132. The partition wall 140 having a thickness is sequentially formed, and the organic light emitting layer 142 and the second electrode 144 are sequentially formed in a structure between the partition walls 140 and automatically patterned by the partition wall 140. have.

The interlayer insulating layer 138 is formed to prevent a short circuit of the second electrode 144 for each pixel region P, which may not be controlled by the partition wall 140.

The organic light emitting layer 142 has a structure in which red, green, and blue light emitting layers 142a, 142b, and 142c are formed in order of pixel regions P, and the first and second electrodes 136 and 144, The organic light emitting layer 142 interposed between the first and second electrodes 136 and 144 forms an organic light emitting diode device (E).

In addition, the first electrode 132 is selected from a light transmitting material, and the light emitted from the organic light emitting layer 142 is characterized in that the screen is implemented in a top-emitting manner in which the light is emitted toward the first electrode 132. For example, when the first electrode 132 is an anode and the second electrode 144 is a cathode, the first electrode 132 is selected from a transparent conductive material. (indium tin oxide).

The first and second substrates 110 and 130 are bonded to each other by seal patterns 150 positioned at edges of the two substrates.

According to the dual panel type organic light emitting device structure according to the present embodiment, first, since the array device and the organic light emitting diode device are formed on different substrates, it is possible to improve production yield and production management efficiency, and to improve product life. Secondly, because it is a top emitting method, it is easy to design a thin film transistor and has a high opening ratio / high resolution.

However, a disadvantage of the dual panel type organic light emitting device panel, compared with the conventional organic light emitting device, is that a moisture absorbent mounting space for removing moisture inside the panel cannot be provided separately.

More specifically, in the conventional organic electroluminescent device, since a separate device is not formed on the upper substrate, a moisture absorption function is provided by introducing a moisture absorbent into the inner surface of the upper substrate. Since each element is formed on the lower substrate, there is a disadvantage in that it does not have a free space to have a moisture absorbent separately.

Hereinafter, in another embodiment of the present invention, an embodiment of the structure including a moisture absorption pattern that can increase the moisture absorption ability of the product without having a separate absorbent mounting space.

Second Embodiment

FIG. 4 is a cross-sectional view of a dual panel type organic light emitting display device according to a second embodiment of the present invention, and will be described based on a structure distinguishing from the first embodiment.

As illustrated, the first and second substrates 210 and 250 are disposed to face each other, and the array element layer A including the thin film transistor T is formed on the first substrate 210. An electrical connection pattern 240 is formed on the array element layer A to be connected to the thin film transistor T.

In addition, a first electrode 252 is formed on a lower front surface of the second substrate 250, and a lower portion of the first substrate 252 is positioned at a boundary between pixel areas P, which is a minimum unit area for implementing a screen. An interlayer insulating film 254 and a partition wall 256 having a predetermined thickness are sequentially formed in a non-pixel area NP and have a reverse taper structure that the partition wall 256 has. The organic light emitting layer 258 and the second electrode 260 in the pixel region P are sequentially formed in a patterned structure.

The predetermined thickness of the partition wall 256 corresponds to a thickness such that the organic light emitting layer 258 and the second electrode 260 can be separated by the partition wall 256 in the pixel region P. .

The first electrode 252, the organic light emitting layer 258, and the second electrode 260 form an organic light emitting diode device (E).

In the present embodiment, the moisture absorption film 262 is formed at a position corresponding to the lower surface of the partition wall 256. The moisture absorbing film 262 is selected from an oxidizing moisture absorbing material such as calcium oxide (CaO), barium oxide (BaO), or other hygroscopic insulating material.

Since the moisture absorption film 262 is formed on the bottom surface of the partition wall 256, if the moisture absorption film 262 has conductivity, the neighboring electrode material is short-circuited with the partition wall 256 interposed by the moisture absorption film 262. Since there is a possibility to make it possible, it is preferable to select from insulating materials.

The moisture absorbing film 262 may be formed using a process capable of forming a film of the above-described type of moisture absorbing material of a solution type. Examples of such a process include ink jet, roll printing, screen printing, and bar coating.

According to the moisture absorption film arrangement structure which concerns on a present Example, since a moisture absorption film is formed in a partition area, since it does not occupy a separate formation area, it is very excellent in space utilization. In addition, in the drawings, an example of a two-pixel structure is provided, but in view of the total number of pixels of the panel, since the formation range of the hygroscopic film can be wider than that of the structure configured in the existing non-active region, the hygroscopic ability can be increased.

Hereinafter, FIG. 5 is a plan view of a substrate for a dual panel type organic light emitting display device according to a second embodiment of the present invention, which is a view of a second substrate including a moisture absorbing film, and is illustrated based on a range of formation of the moisture absorbing film.

As illustrated, a plurality of pixel regions P, which are the smallest units for implementing the screen, are defined in the second substrate 250 so as to be spaced apart from each other by a predetermined interval, and the intervals between the pixel regions P are defined as non-pixel regions ( NP), and the moisture absorption film 262 is formed in the position corresponding to the non-pixel region.

Although not shown in the drawings, the moisture absorbing film 262 is formed on an area in which an interlayer insulating film 254 of FIG. 4 and a partition wall 256 of FIG. 4 are sequentially formed, and a partition wall 256 of FIG. 4 is formed. The moisture absorbing film 262 is substantially spaced apart from the second electrode 260 formed in the pixel region P due to the height of the branch.

Third Embodiment

6A to 6C are diagrams illustrating a dual panel type organic light emitting display device according to a third embodiment of the present invention. FIG. 6A is a cross-sectional view of FIG. 6B, and FIG. 6B is an enlarged view of region “VIb” of FIG. 6A. 6c is a plan view of a portion of the substrate on which the moisture absorption film is formed, and will be described with reference to the drawings for a detailed description of the double partition structure.

As illustrated, the double partition 356 has a rectangular sub-wall 355 formed in a region covering the pixel region P, and is viewed based on the non-pixel region NP. The sub partition 355 has a structure in which the sub partitions 355 are spaced apart from each other.

According to the double barrier rib 356 structure, the organic light emitting layer 358 and the second electrode 360 may be separated even in the separation area SA between the double barrier ribs 356, and thus, between the pixel areas P rather than the single barrier rib structure. The separation structure of the second electrode 360 can be ensured.

In the present embodiment, a moisture absorption film 362 is formed in the standoff area SA between the double partition walls 356. The formation thickness or width of the moisture absorption film 362 is determined according to the width and height of the spaced apart area SA between the double partition walls 356, and compared with the second embodiment, the moisture absorption film 362 according to the present embodiment. According to the structure, the pattern structure of the moisture absorption film 362 can be stabilized and formed in the separation area SA, so that the probability of defects of other elements is reduced, and the hygroscopic ability is controlled by adjusting the separation area SA. It is easy to improve.

In addition, the inverse taper structure of the double partition wall 356 corresponds to an inner side surface structure of the sub partition wall 355 covering the pixel area P, and the separation area SA between the sub partition walls 355 is Since the moisture absorbing film 362 is formed, it may be easy to form a surface having a side surface perpendicular to the substrate surface.

The material and the manufacturing process of the moisture absorption film 362 according to the present embodiment can be applied in the same manner as in the second embodiment.

Although not shown in detail in the second and third embodiments, substantially the organic light emitting layer and the second electrode are also formed in the outermost region of the partition wall, the stacking order with the moisture absorption film is determined according to the process sequence.

Hereinafter, the manufacturing process of the dual panel type organic light emitting display device including the moisture absorption film according to the present invention will be described in detail.

Fourth Embodiment

FIG. 7 is a flowchart illustrating a manufacturing process of a dual panel type organic light emitting display device according to a fourth exemplary embodiment of the present invention step by step.

ST1 is a step of forming an array element layer including a thin film transistor on a first substrate, and forming an electrical connection pattern connected to the thin film transistor on the array element layer.

The array element layer may include a plurality of gate wirings, data wirings, power wirings, a switching thin film transistor positioned at an intersection point of the gate wiring and a data wiring, a driving thin film transistor connected to a drain electrode and a power wiring of the switching thin film transistor. The thin film transistor includes a thin film transistor that substantially supplies current to the organic light emitting diode device, and thus the representative thin film transistor refers to a driving thin film transistor.

The electrical connection pattern may be formed of a conductive material. For example, the electrical connection pattern may include a protrusion pattern made of an organic material and a connection electrode connected to the thin film transistor including a region covering the protrusion pattern. In addition, the thin film transistor and the electrical connection pattern may be connected through a separate electrode.

In step ST2, a first electrode is formed on the entire surface of the second substrate, which is another substrate, and a partition having a predetermined thickness is formed in the non-pixel region below the first electrode in an interlayer insulating film and an inverse taper structure. And forming an organic light emitting layer and a second electrode in sequence with the structure automatically patterned by the barrier ribs, thereby forming an organic light emitting diode device including the first electrode, the organic light emitting layer, and the second electrode.

The barrier rib is composed of either a single barrier rib structure or a double barrier rib structure.

In the case of the independent light emitting method, the organic light emitting layer is made of red, green, and blue light emitting materials, and when it includes a separate full color device, the organic light emitting layer is made of a single color light emitting material.

ST3 is a step of forming a moisture absorption film on the uppermost surface of the partition wall (single structure partition wall) or the partition area between the partition walls (double structure partition wall).

The forming of the moisture absorbing film may include selectively applying a solution-type moisture absorbing material to the top surface of the partition wall (single structure partition wall) or the space between the partition walls (double structure partition wall) through a process capable of forming a film.

The hygroscopic material may be selected from a hygroscopic oxidizing material such as calcium oxide or barium oxide or an insulating material having hygroscopicity, and an application process may include inkjet, roll printing, screen printing, and bar coating process. For example, the process may be performed in a state where a mask having an open part is replaced in a region corresponding to a top surface of the partition wall (single structure partition wall) or a space between the partition walls (double structure partition wall).

ST4 is a position at which the electrical connection pattern and the organic light emitting diode device are connected, and the first and second substrates are opposed to each other to bond the two substrates together.

Prior to this step, the method may include forming a seal pattern on an edge of one of the first and second substrates, and sealing the edges of the first and second substrates in a bonding step using the seal pattern. .

Through the bonding step, the first and second substrates have a vacuum state, and the moisture absorbing film can remove moisture that may exist in the substrate, thereby improving the life of the device and lowering the defective rate. Furthermore, since the moisture absorbing film according to the present embodiment is formed in the partition wall forming part, a separate absorbent mounting space can be omitted, and space utilization can also be increased.

However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

As described above, according to the dual panel type organic light emitting diode and a method for manufacturing the same according to the present invention, first, since the array element and the organic light emitting diode element are formed on different substrates, production yield and productivity can be improved. Second, the product lifespan can be effectively increased. Second, the upper light emitting type makes it easier to design thin film transistors and realizes high opening ratio / high resolution. Third, it has an automatic patterned structure without a separate shadow mask by the partition wall. Since the organic light emitting layer and the second electrode can be formed, process efficiency can be increased. Fourth, by forming a moisture absorbing film in the partition forming portion, a separate absorbent mounting space can be omitted, thereby improving water efficiency and removing water from the product. You can do it effectively.

1 is a cross-sectional view of a conventional organic light emitting device panel.

2A and 2B are views of one pixel area of a conventional active matrix organic electroluminescent device, FIG. 2A is a plan view, and FIG. 2B shows a cross section taken along the cutting line " IIb-IIb " One section.

3 is a cross-sectional view of a dual panel organic electroluminescent device according to a first embodiment of the present invention.

4 is a cross-sectional view of a dual panel type organic light emitting display device according to a second exemplary embodiment of the present invention.

5 is a plan view of a substrate for a dual panel type organic light emitting display device according to a second exemplary embodiment of the present invention.

6A to 6C are diagrams illustrating a dual panel type organic light emitting display device according to a third embodiment of the present invention. FIG. 6A is a cross-sectional view of FIG. 6B, and FIG. 6B is an enlarged view of region “VIb” of FIG. 6A. 6c is a plan view of a partial region of the substrate on which the moisture absorption film is formed.

7 is a process flowchart showing step by step a manufacturing process of a dual panel organic electroluminescent device according to a fourth embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

210, 250: first and second substrates 252: first electrode

254: interlayer insulating film 256: partition wall

258: organic light emitting layer 260: second electrode

262: moisture absorption film P: pixel area

NP: non-pixel region

Claims (27)

An array element layer on the first substrate, the array element layer comprising a thin film transistor; An electrical connection pattern electrically connected to the thin film transistor on the first array device layer; A first electrode formed under the second substrate disposed to face the first substrate; A partition wall positioned below the first electrode and formed in a non-pixel area that is a spaced interval between pixel areas, which is a minimum unit area for implementing a screen, and having a predetermined thickness with an inverse taper structure; An organic light emitting layer and a second electrode sequentially formed in the pixel region in the partition wall in a structure automatically patterned by the partition wall; A moisture absorbing film disposed under the partition wall and formed of a moisture absorbing material formed in an area range corresponding to the partition wall; Seal patterns formed in regions surrounding edge portions of the first and second substrates And a first panel, an organic light emitting layer, and a second electrode forming an organic light emitting diode device, and wherein the second electrode is connected to an electrical connection pattern. An array element layer on the first substrate, the array element layer comprising a thin film transistor; An electrical connection pattern electrically connected to the thin film transistor on the first array device layer; A first electrode formed under the second substrate disposed to face the first substrate; Sub-border walls disposed under the first electrode and formed in a non-pixel area that is a spaced interval between pixel areas, which are the smallest unit area for implementing a screen, are formed in a frame shape surrounding each pixel area, and are spaced apart from each other. A partition wall made of a reverse taper structure and having a predetermined thickness; An organic light emitting layer and a second electrode sequentially formed in the pixel region in the partition wall in a structure automatically patterned by the partition wall; A hygroscopic film made of a hygroscopic material formed in the spaced area between the sub-barriers; Seal patterns formed in regions surrounding edge portions of the first and second substrates And a first panel, an organic light emitting layer, and a second electrode forming an organic light emitting diode device, and wherein the second electrode is connected to an electrical connection pattern. The method according to claim 1 or 2, The material forming the hygroscopic film is a dual panel type organic light emitting device selected from insulating materials. The method of claim 3, wherein The insulating material is an dual panel type organic light emitting device that is an oxidizing material. The method of claim 4, wherein The oxidizing material is selected from any one of calcium oxide (CaO) or barium oxide (BaO) dual panel type organic electroluminescent device. The method according to claim 1 or 2, A dual panel type organic electroluminescent device further comprising an interlayer insulating film positioned in the non-pixel region between the first electrode and the partition wall. The method of claim 2, The barrier rib is a dual panel organic light emitting diode having a double barrier rib structure in which two sub barrier ribs are positioned between neighboring pixel regions. The method according to claim 1 or 2, The first electrode is an anode, the second electrode is a cathode, and the first electrode has a light transmitting property, and the light emitted from the organic light emitting layer is driven by a top emission method in which light is emitted toward the first electrode. device. The method according to claim 1 or 2, The organic light emitting layer is composed of a red, green, blue light emitting layer, a dual panel type organic electroluminescent device to implement a full color independently. The method according to claim 1 or 2, Between the second substrate and the first electrode, any one of a single color filter layer structure or a color filter layer and a color-changing mediums (CCM) dual structure, which is a color change layer, is further included, and the organic light emitting layer is a dual panel including a single color light emitting layer. Type organic electroluminescent device. The method of claim 2, The formation range of the moisture absorbing film is a dual panel type organic electroluminescent device is determined by the range between the sub-barrier spacing area. The method of claim 2, The reverse taper structure of the partition wall is a dual panel type organic light emitting display device corresponding to an inner structure covering a pixel area of the sub partition wall. The method according to claim 1 or 2, The thin film transistor includes a switching thin film transistor and a driving thin film transistor, and the thin film transistor connected to the electrical connection pattern is a driving thin film transistor of a dual panel type organic light emitting device. Forming an array element layer including a thin film transistor on the first substrate and an electrical connection pattern connected to the thin film transistor on the array element layer; Forming a first electrode on an entire surface of a second substrate, which is another substrate; Forming a partition wall having a predetermined thickness in an inverse taper structure on a non-pixel region positioned at a boundary portion of each pixel region above the first electrode; Sequentially forming the organic light emitting layer and the second electrode in a structure that is automatically patterned in units of pixel regions by the partition wall; Forming a moisture absorbing film made of a moisture absorbing material in a region corresponding to the partition wall on the partition wall; Bonding the first and second substrates to each other in the direction in which the electrical connection pattern and the second electrode are connected to each other; The method of claim 1, wherein the first electrode, the organic light emitting layer, and the second electrode form an organic light emitting diode device. Forming an array element layer including a thin film transistor on the first substrate and an electrical connection pattern connected to the thin film transistor on the array element layer; Forming a first electrode on an entire surface of a second substrate, which is another substrate; The non-pixel region positioned at the boundary portion of each pixel region of the upper portion of the first electrode may include sub-barriers spaced apart from each other in a frame shape surrounding the pixel region, and have an inverse taper structure based on the second substrate surface. Forming a partition wall having a predetermined thickness; Sequentially forming the organic light emitting layer and the second electrode in a structure that is automatically patterned in units of pixel regions by the partition wall; Forming a moisture absorbing film made of a moisture absorbing material in the space between the sub-partitioning walls; Bonding the first and second substrates to each other in the direction in which the electrical connection pattern and the second electrode are connected to each other; The method of claim 1, wherein the first electrode, the organic light emitting layer, and the second electrode form an organic light emitting diode device. The method according to any one of claims 14 to 15, In the step of forming the hygroscopic film, a method of manufacturing a dual panel type organic electroluminescent device is formed by a process capable of film formation using a solution-type hygroscopic material. The method of claim 16, The hygroscopic material is a manufacturing method of a dual panel organic electroluminescent device is selected from an insulating material. The method of claim 17, The hygroscopic material is a manufacturing method of a dual panel type organic light emitting device is selected from an oxidizing material. The method of claim 16, The oxidizing material is a method of manufacturing a dual-pattern type organic electroluminescent device is selected from any one of calcium oxide, barium oxide. The method of claim 16, The film forming process may be performed by manufacturing an inkjet, roll printing, screen printing, or bar coating process. Way. The method of claim 22, In the manufacturing step of the moisture absorption film, a manufacturing method of a dual panel type organic electroluminescent device using a mask having the partition forming portion as an open portion. The method of claim 14, The forming of the moisture absorption film may include forming the barrier rib and forming the organic light emitting layer. The method of claim 15, The forming of the moisture absorption film may include forming the barrier rib and forming the organic light emitting layer. The method of claim 15, The reverse taper structure of the partition wall is a manufacturing method of a dual panel type organic light emitting device corresponding to the inner surface structure surrounding the pixel region of the sub partition wall. The method according to any one of claims 14 to 15, In the forming of the organic light emitting layer, a method of manufacturing a dual panel type organic light emitting display device comprising the steps of sequentially forming red, green, and blue light emitting layers in units of the pixel region. The method according to any one of claims 14 to 15, Prior to the forming of the first electrode, the method may include forming a color filter layer or a full color implementation element of a color filter layer and a CCM on the second substrate, wherein the organic light emitting layer is a dual panel formed of a monochromatic light emitting layer. Method of manufacturing a type organic electroluminescent device. The method according to any one of claims 14 to 15, And forming an interlayer insulating film in a region corresponding to the non-pixel region between the forming of the first electrode and the forming of the barrier rib.